WO2017080926A1 - Abbildende optik zur abbildung eines objektfeldes in ein bildfeld sowie projektionsbelichtungsanlage mit einer derartigen abbildenden optik - Google Patents
Abbildende optik zur abbildung eines objektfeldes in ein bildfeld sowie projektionsbelichtungsanlage mit einer derartigen abbildenden optik Download PDFInfo
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- WO2017080926A1 WO2017080926A1 PCT/EP2016/076700 EP2016076700W WO2017080926A1 WO 2017080926 A1 WO2017080926 A1 WO 2017080926A1 EP 2016076700 W EP2016076700 W EP 2016076700W WO 2017080926 A1 WO2017080926 A1 WO 2017080926A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0652—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0657—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7025—Size or form of projection system aperture, e.g. aperture stops, diaphragms or pupil obscuration; Control thereof
Definitions
- the invention relates to an imaging optics for imaging an object field in an image field.
- the invention further relates to an optical system having such an imaging optical system, to a projection exposure apparatus comprising such an optical system, to a method for producing a microstructured or nanostructured component with such a projection exposure apparatus, and to a microstructured or nanostructured component produced by this method ,
- Projection optics of the type mentioned are known from DE 10 2015 209 827 AI, DE 10 2012 212 753 AI and US 4,964,706.
- a GI mirror is a mirror with an incident angle of the imaging light that is greater than 60 °.
- the angle of incidence on the GI mirror may be greater than 65 °, greater than 70 °, greater than 75 °, and greater than 80 °.
- the aperture indicates the entire outer edge contour of the pupil of the imaging optics. The aperture can be executed in sections plan.
- the aperture can be created with a 3D gradient of an aperture border be executed.
- the outer edge contour of the pupil predetermining diaphragm can be provided for setting an inner edge contour obscuration of the pupil obscuration.
- the pupil of the imaging optics can be specified with exactly one diaphragm even if there are a different number of first-level and second-level intermediate images.
- a mirror according to claim 2 which leads to an obscuration of the pupil, allows projection optics with large image-side numerical aperture, in particular with a numerical aperture which is greater than 0.4, greater than 0.45 or greater than 0.5.
- the image-side numerical aperture may be 0.55 and may be even larger.
- a mirror according to claim 3 can be manufactured with reasonable effort.
- An aperture according to claim 4 or 5 has been found to be particularly suitable.
- An arrangement of an intermediate image according to claim 7 makes it easy to make the intermediate image accessible, which can be used to manipulate the imaging light beam at the location of this intermediate image.
- an intermediate image arrangement according to claim 8 leads to an advantageous constriction of the imaging light bundle in the region of the passage opening, which can then be made small. This reduces obscuration of the imaging optics, the area of which may be less than 9% of the total pupil of the imaging optics, in particular less than 6.25%, and may for example be 2.25%.
- An entrance pupil arranged according to claim 9 makes it possible to arrange a pupil-defining component of the illumination optics there, without the need to arrange further illumination-optical components between this component and the object.
- An obscuration diaphragm according to claim 10 allows an illumination angle-independent specification of a pupil obscuration, for example, by a mirror passage opening can be caused.
- the obscuration diaphragm can be arranged adjacent to the diaphragm which predetermines the outer pupil edge contour.
- the obscuration diaphragm can be arranged in the same plane as the diaphragm which predetermines the outer pupil edge contour.
- the obscuration diaphragm can be applied directly to a mirror reflection surface.
- a semiconductor component for example a memory chip, can be produced with the projection apparatus.
- FIG. 1 schematically shows a projection device for the EUV
- Fig. 2 in a meridional section an embodiment of an imaging optics, as
- Fig. 3 is a view of the projection optics of FIG. 2 according to viewing direction III in
- FIG. 2 shows plan views on edge contours of optically used surfaces of the mirrors of the imaging optics according to FIG. 2;
- FIG. 4 shows plan views on edge contours of optically used surfaces of the mirrors of the imaging optics according to FIG. 2;
- FIGS. 5 and 6 in illustrations similar to FIGS. 2 and 3 show a further embodiment of an imaging optical system which can be used as a projection objective in the projection exposure apparatus according to FIG. 1;
- FIG. 7 shows a plan view of an inner diaphragm contour of an aperture diaphragm of the imaging optical system according to FIG. 5;
- FIG. 8 shows a plan view of an outer diaphragm contour of an obscuration diaphragm of the imaging optical system according to FIG. 5;
- FIG. 9 shows plan views on edge contours of optically used surfaces of the mirrors of the imaging optics according to FIG. 5.
- a projection exposure apparatus 1 for microlithography has a light source 2 for illuminating light or imaging light 3.
- the light source 2 is an EUV light source which emits light in a wavelength range, for example, between 5 nm and 30 nm, in particular between 5 nm and 15 nm. generated.
- the light source 2 may in particular be a light source with a wavelength of 13.5 nm or a light source with a wavelength of 6.9 nm. Other EUV wavelengths are possible.
- wavelengths for example visible wavelengths or also other wavelengths which can be used in microlithography (for example DUV, deep ultraviolet) and for the suitable laser light sources and / or LED light sources are available (for example 365 nm, 248 nm) nm, 193 nm, 157 nm, 129 nm, 109 nm) is possible for the illumination light 3 guided in the projection exposure apparatus 1.
- a beam path of the illumination light 3 is shown extremely schematically in FIG.
- an illumination optical system 6 For guiding the illumination light 3 from the light source 2 to an object field 4 in an object plane 5 is an illumination optical system 6.
- a projection optics or imaging optics 7 With a projection optics or imaging optics 7, the object field 4 in an image field 8 in an image plane 9 with a vorgege- given reduction scale.
- the projection optics 7 has exactly one object field 4.
- the projection optics 7 has exactly one image field 8.
- the x-direction is perpendicular to the plane of the drawing into it.
- the y-direction runs to the left and the z-direction to the top.
- the object field 4 and the image field 8 are bent or curved in the object plane 5 and in the image plane 9, in particular partially annular. Alternatively, it is also possible to execute the object field 4 and the image field 8 rectangular.
- the object field 4 and the image field 8 have an xy aspect ratio greater than 1.
- the object field 4 thus has a longer object field dimension in the x direction and a shorter object field dimension in the y direction. These object field dimensions run along the field coordinates x and y.
- the projection optics 7 is anamorphic table, ie in the x-direction (reduction scale in the xz-plane, ie in a first imaging light plane, which is also referred to as sagittal plane) a different reduction scale than in the y-direction (reduction scale in the yz plane, ie in a second imaging light plane, which is also referred to as the meridional plane).
- the projection optics 7 In the x-direction, the projection optics 7 has a reduction scale of 4.
- the projection optics 7 In the y-direction, the projection optics 7 has a reduction scale of 8.
- the projection optics 7 may have a reduction scale in the range between 4 and 5, for example a reduction scale in the range between 4.6 and 4.9, for example a reduction scale of 4.8.
- the projection optics 7 can have a reduction scale in the range between 6 and 9, for example in the range between 7 and 8 and in particular in the range around 7.5.
- An embodiment of the projection optics 7 with the same such reduction scales on the one hand in the xz plane and on the other hand in the yz plane is possible.
- a first imaging light plane XZHR is the plane which is spanned at the respective location of the beam path of the imaging light 3 from the first Cartesian object field coordinate x and a current imaging light main propagation direction ZHR.
- the imaging light main propagation direction ZHR is the beam direction of a main beam 16 of a central field point.
- this imaging light main propagation direction ZHR generally changes. This change can be described as a tilting of the instantaneous imaging light main propagation direction ZHR about the first Cartesian object field coordinate x by a tilt angle which is equal to the deflection angle of this main beam 16 of the central field point at the respectively viewed mirror M1 to MIO.
- the first imaging light plane XZHR is also referred to as the first imaging light plane xz for the sake of simplification.
- the second imaging light plane yz also includes the imaging light main propagation direction ZHR and is perpendicular to the first imaging light plane XZHR.
- the projection optical system 7 Since the projection optical system 7 is folded exclusively in the meridional plane yz, the second imaging light plane yz coincides with the meridional plane.
- the image plane 9 is tilted in the projection optics 7 to the object plane 5 about the x-axis by 11.5 °.
- the image plane 9 can also be arranged parallel to the object plane 5.
- the projection optics 7 depict a section of a reflection mask 10 that coincides with the object field 4, which is also referred to as a reticle.
- the reticle 10 is supported by a reticle holder 10a.
- the reticle holder 10a is displaced by a reticle displacement driver 10b.
- FIG. 1 schematically shows a bundle of rays 13 of the illumination light 3 entering between the reticle 10 and the projection optics 7 and between the projection optics 7 and the substrate 11 a ray bundle 14 of the illuminating light emitting from the projection optics 7. 3 is shown.
- An image field-side numerical aperture (NA) of the projection optics 7 is not reproduced to scale in FIG.
- the projection exposure apparatus 1 is of the scanner type. Both the reticle 10 and the substrate 11 are scanned in the y direction during operation of the projection exposure apparatus 1. A stepper type of the projection exposure apparatus 1 in which a stepwise displacement of the reticle 10 and of the substrate 11 in the y direction takes place between individual exposures of the substrate 11 is also possible. These displacements are synchronized with each other by appropriate control of the displacement drives 10b and 12a.
- FIG. 2 shows the optical design of the projection optics 7. Shown in FIG. 2 are the beam paths in each case three individual beams 15 which emanate from a plurality of object field points spaced from one another in FIG. 2 in the y direction. Shown are principal rays 16, ie individual rays 15, which run through the center of a pupil in a pupil plane of the projection optics 7, and in each case an upper and a lower coma ray of these two object field points. Starting from the object field 4, the main beam 16 of a central object field point with a normal to the object plane 5 includes an angle CRAO of 5.1 °.
- the projection optics 7 has a picture-side numerical aperture of 0.55.
- An entrance pupil EP is arranged in front of the object field 4 in the beam path of the imaging light 3. Possible positions of the entrance pupil EP when using a reticle 10 passing through the imaging light 3 above the object plane 5 and when using a reflective reticle 10 below the object plane 5 are indicated in FIG. 2 in each case. The result is a divergent course of the main rays 16 between the object field 4 and the mirror Ml.
- the projection optics 7 according to FIG. 2 has a total of ten mirrors, which are numbered consecutively in the order of the beam path of the individual beams 15, starting from the object field 4, with Ml to MIO.
- the projection optics 7 is a purely catoptric optics.
- the imaging optics 7 may also have a different number of mirrors, for example four mirrors, six mirrors or eight mirrors. Even an odd number of mirrors is possible in the projection optics 7.
- Shown in FIG. 2 are the calculated reflection surfaces of the mirrors M1 to MIO. Is used, as can be seen in the illustration of FIG. 2, only a portion of these calculated reflection surfaces. Only this actually used area of the reflection surfaces is actually present at the real mirrors M1 to M10. This useful reflection surfaces are supported in a known manner by mirror bodies, not shown.
- the mirrors M1, M9 and MIO are designed as mirrors for normal incidence, ie as mirrors to which the imaging light 3 strikes with an angle of incidence which is smaller than 45 °. Overall, therefore, the projection optics 7 according to FIG. 2 have three mirrors M1, M9 and MIO for normal incidence. These mirrors are also referred to below as Nl mirror.
- the mirrors M2 to M8 are mirrors for grazing incidence of the illumination light 3, ie mirrors, on which the illumination light 3 occurs with angles of incidence which are greater than 60 °.
- a typical angle of incidence of the individual beams 15 of the imaging light 3 on the grazing incidence mirrors M2 to M8 is in the region of 80 °.
- the projection optics 7 of FIG. 2 exactly seven mirrors M2 to M8 for grazing incidence. These mirrors are also referred to below as Gl mirrors.
- the mirrors M2 to M8 reflect the imaging light 3 so that the angles of incidence of the individual beams 15 on the respective mirrors M2 to M8 and thus the deflection effect of the mirrors M2 to M8 add up.
- the mirrors M1 to MIO carry a coating which optimizes the reflectivity of the mirrors M1 to M10 for the imaging light 3. This may be, in particular for the Gl mirrors, a ruthenium coating, a molybdenum coating or a molybdenum coating with a topmost layer of ruthenium. Other coating materials can also be used. In the case of grazing incidence mirrors M2 to M8, a coating with, for example, a layer of molybdenum or ruthenium may be used.
- the highly reflective layers, in particular the mirrors Ml, M9 and MIO for normal incidence can be embodied as multilayer layers, wherein successive layers can be made of different materials. Alternating materials can be used.
- a typical multilayer coating may comprise fifty bilayers of one layer of molybdenum and one layer of silicon.
- the mirror MIO ie the last mirror in the imaging beam path in front of the image field 8 has a passage opening 17 for the passage of the imaging light 3, which is reflected by the third last mirror M8 towards the second to last mirror M9.
- the mirror MIO is used reflectively around the passage opening 17. All other mirrors M1 to M9 have no passage opening and are used in a coherently coherent area.
- the projection optics 7 has exactly one first-plane intermediate image 18 in the imaging beam path in the region of the passage of the imaging light 3 through the passage opening 17 in the mirror MIO.
- This first-plane intermediate image 18 lies in the imaging light beam path between the mirrors M8 and M9.
- a distance between the passage opening 17 and the image field 8 is more than four times as large as a distance between the passage opening 17 and the first plane intermediate image 18.
- the imaging light 3 passes through exactly two second-plane intermediate images 19 and 20.
- the first of these two second-plane intermediate images 19 lies in the imaging light beam path in the region of the reflection of the imaging light 3 at the mirror M3.
- the other of the two second-level intermediate images 20 lies in the imaging light beam path between the mirrors M6 and M7.
- the number of first-level intermediate images, that is to say exactly one first-level intermediate image in projection optics 7, and the number of second-level intermediate images, that is to say exactly two second-level intermediate images in projection optics 7, differ from one another in projection optics 7. This number of intermediate images differs in the projection optics 7 by exactly one.
- the second imaging light plane yz in which the larger number of intermediate images, namely the two second-plane intermediate images 19 and 20, is present, coincides with the folding plane yz of the GI mirrors M2 to M8.
- This folding plane is the plane of incidence of the main beam 16 of the central field point in the reflection at the respective GI mirror.
- the second-level intermediate images are generally not perpendicular to the main beam 16 of the central field point, which defines the imaging light main propagation direction ZHR.
- An inter-frame tilt angle, ie a deviation from this vertical arrangement, is basically arbitrary and can be between 0 ° and +/- 89 °.
- the projection optics 7 has exactly one aperture AS for specifying an outer edge contour of a pupil in the region of a pupil plane 21 of the projection optics 7.
- This exactly one aperture AS can specify a portion of this outer edge contour of the pupil or the entire outer edge contour of the pupil.
- the diaphragm AS is arranged spatially in front of a mirror which is penultimate in the imaging light beam path, that is to say in the imaging beam path in front of the mirror M9.
- the diaphragm AS is arranged in particular in the imaging light beam path in front of the pre-second mirror M8.
- the shutter AS is arranged in the imaging light beam path between the mirrors M5 and M6.
- the diaphragm AS is designed with a three-dimensional (3D) course of the inner edge contour.
- both the diaphragm AS and an obscuration diaphragm of the projection optics 7 are each located on a spherical surface.
- the diaphragm AS may have an inner edge contour which lies in a plane, that is to say it can be designed with a completely flat diaphragm body which has this inner diaphragm edge contour.
- the diaphragm AS can be designed with a diaphragm body designed only in sections.
- the layers of the intermediate images 18 to 20 on the one hand and the curvatures of the mirrors Ml to MIO on the other hand are coordinated so that the between the object plane 5 and the First level intermediate image 18 arranged pupil in the first image light level XZHR and also the pupil lying between the two second plane septbildem 19, 20 in the second imaging light plane yz each lie at the location of the aperture diaphragm AS in the pupil plane 21.
- the single diaphragm AS is sufficient for specifying the outer edge contour of the pupil of the projection optics 7.
- an entire bundle of the imaging light 3 is completely accessible from the outside over its entire circumference.
- the extent of the diaphragm AS can be smaller in the scanning direction y than in the cross-scanning direction x.
- the non-illuminated obscuration area in the system pupil which is predetermined by the obscuration diaphragm already mentioned above, can be round, elliptical, square or rectangular. This non-illuminable area in the system pupil may also be decentered with respect to a center of the system pupil in the x-direction and / or in the y-direction.
- an obscuration diaphragm with 3D circulation of the outer edge contour it is also possible to use an obscuration diaphragm with a different edge contour profile or with another diaphragm body design, as described above in connection with the aperture diaphragm AS.
- the mirrors M1 to MIO are designed as freeform surfaces which can not be described by a rotationally symmetrical function.
- Other embodiments of the projection optics 7 are possible in which at least one of the mirrors M1 to MIO is designed as a rotationally symmetric asphere. All mirrors M1 to M10 can also be embodied as such aspheres.
- a free-form surface can be described by the following free-form surface equation (Equation 1): ⁇ + ⁇ ⁇ - ( ⁇ + k x ) (c x xf - ( ⁇ + k y ) (c y yf
- r is the distance to the reference axis of the free-form surface equation
- Ci, C 2 , C3... Denote the coefficients of the free-form surface series expansion in the powers of x and y.
- Equation (1) thus describes a biconical freeform surface.
- freeform surfaces can also be described using two-dimensional spline surfaces.
- examples include Bezier curves or non-uniform rational basis Splines (non-uniform rational base splines, NURBS).
- two-dimensional spline surfaces may be described by a mesh of points in an xy plane and associated z-values or by these points and their associated slopes.
- the complete surface is obtained by interpolating between the mesh points using, for example, polynomials or functions that have certain continuity and differentiability properties. Examples of this are analytical functions.
- FIG. 4 shows edge contours of the reflection surfaces acted on by the mirrors M1 to M10 of the projection optical unit 7, in each case with the imaging light 3, that is to say the so-called footprints of the mirrors M1 to MIO.
- These edge contours are each shown in an x / y diagram which corresponds to the local x and y coordinates of the respective mirror M1 to MIO.
- the shape of the passage opening 17 is shown. The following two tables summarize the parameters "maximum angle of incidence”, “reflection surface extent in y-direction”, “reflection surface extent in y-direction” and “maximum mirror diameter” for mirrors M1 to M10.
- the largest maximum mirror diameter of the image-side numerical aperture predetermining MIO mirrors with a diameter of 801 mm. None of the other mirrors Ml to M9 has a maximum diameter greater than 700 mm. Eight of the ten mirrors, namely the mirrors M2 to M9, have a maximum mirror diameter of less than 570 mm. Five of the ten mirrors, mirrors M5 to M9, have a maximum mirror diameter that is less than 460 mm.
- optical design data of the reflection surfaces of the mirrors M1 to MIO of the projection optics 7 can be seen from the following tables. These optical design data respectively originate from the image plane 9, thus describe the respective projection optics in the reverse direction of the imaging light 3 between the image plane 9 and the object plane 5.
- the first of these tables gives an overview of the design data of the projection optics 7 and summarizes the numerical aperture NA, the calculated design wavelength for the imaging light, the size of the image field in the x and y direction, a field curvature, a wavefront error rms and a Blendenort.
- This curvature is defined as the inverse radius of curvature of the field.
- the image field 8 has an x extension of two times 13 mm and a y extension of 1.2 mm.
- the projection optics 7 is optimized for an operating wavelength of the illumination light 3 of 13.5 nm.
- the wavefront error rms is 12.8 ⁇ .
- the second of these tables gives to the optical surfaces of the optical components
- Negative radii values mean, for the incident illuminating light 3, concave curves in the section of the respective surface with the considered plane (xz, yz), which is spanned by a surface normal at the vertex with the respective direction of curvature (x, y).
- the two radii radius x, radius y can explicitly have different signs.
- the powers Power x (P x ), Power y (P y ) at the vertices are defined as:
- AOI here denotes an angle of incidence of the guide beam to Oberfiambanormalen.
- Coefficients C n which are not tabulated, each have the value 0.
- the fourth table also indicates the amount along which the respective mirror decentralized (DCY), moved in the z-direction (DCZ) and tilted (TLA, TLB, TLC), starting from a reference surface.
- DCY mirror decentralized
- DCZ z-direction
- TLA tilted
- TLB tilted
- the twist angle is given in degrees. It is decentered first, then tilted.
- the reference surface at decentering is the first surface of the specified optical design data.
- a decentering in the y-direction and in the z-direction in the object plane 5 is indicated.
- the fourth level also includes the image plane as the first area, the object level as the last area, and an aperture area (with the aperture name "AS") of the aperture AS.
- the fifth table gives the transmission data of the mirrors MIO to Ml, namely their reflectivity for the angle of incidence of an illuminating light beam striking centrally on the respective mirror.
- the total transmission is given as a proportion factor remaining from an incident intensity after reflection at all mirrors of the projection optics.
- the sixth table indicates an inner boundary of the diaphragm AS as a polygon in local coordinates xyz.
- the aperture is still decentered and tilted as described above.
- the last column of Table 6 is still the respective aperture type of the specified traverse called.
- CLA means a diaphragm boundary that is transparent toward the inside, that is to say towards a diaphragm center, and is blocking toward the outside (type aperture diaphragm).
- An aperture diaphragm boundary serves to define an outer boundary of a pupil of the projection optics 7.
- the additional obscuration diaphragm serves to define an obscured area located inside the pupil.
- the obscuration diaphragm can be arranged on the same, for example, spherically or aspherically or flat surface as the aperture diaphragm AS.
- the obscuration diaphragm can also lie on an arrangement surface which is separate from the arrangement surface of the aperture diaphragm AS.
- the seventh table indicates an outer boundary of the obscuration diaphragm as a polygon in local coordinates xyz analogous to the sixth table.
- the obscuration diaphragm is also decentered and tilted as described above.
- the obscuration stop is located on the same surface as the aperture stop in the case described in the Design Tables.
- a boundary of a diaphragm surface of the diaphragm AS see also Tables 6 and 7 for Fig.
- the puncture points on the diaphragm surface of all beams of the illumination light 3 are used, which propagate on the image side from the field center point with a image-side telecentric aperture in the direction of the diaphragm surface, resulting in a complete obscuration of the passage opening 17 of the mirror MIO for all field points.
- the boundary is an inner boundary.
- Obskurationsbrende it is at the boundary to an outer boundary.
- the respective diaphragm can lie in one plane or can also be embodied in three dimensions.
- the extent of the aperture can be smaller in the scanning direction (y) than in the cross-scanning direction (x).
- FIG. 3 shows a sagittal view of the projection optics 7.
- the position of the first-level intermediate image 18 adjacent to the passage opening 17 in the last mirror MIO in the imaging light beam path of the projection optics 7 becomes clear.
- the projection optics 7 has a picture-side numerical aperture of 0.55.
- the projection optics 7 In an imaging light plane parallel to the xz plane (sagittal view of FIG. 3), the projection optics 7 has a reduction factor ⁇ x of 4.00.
- the projection optics 7 In the yz plane perpendicular thereto (meridional plane according to FIG. 2), the projection optics 7 has a reduction factor ⁇ y of 8.00.
- An object-side main beam angle is 5.1 °. From the object field 4 towards the first mirror M1 in the beam path of the projection optics 7, the main beams 16 extend divergently. An entrance pupil of the projection optics 7 thus lies in the beam path of the imaging light 3 in front of the object field 4.
- the main beam angle denotes the angle of a main beam of a central object field point to a normal to the object plane 5.
- a pupilobscuration of the projection optics 7 is 15% of the numerical aperture of the projection optics 7.
- An area fraction of 0.15 2 of a pupil of the projection optics 7 is thus obscured.
- An object image offset dois is approximately 2360 mm.
- the mirrors of the projection optics 7 can be accommodated in a cuboid with xyz edge lengths of 797 mm ⁇ 3048 mm ⁇ 2115 mm.
- the object plane 5 extends at an angle of 11.5 ° to the image plane 9, ie is tilted to the image plane 9.
- a working distance between the mirror 9 closest to the image plane 9 and the image plane 9 is 97 mm.
- a projection optics 22 is explained below, which can be used instead of the projection optics 7 in the projection exposure apparatus 1 according to FIG.
- the mirrors M1 to MIO are again designed as free-form surface mirrors, for which the free-form surface equation (1) given above applies.
- FIG. 9 again shows the edge contours of the reflection surfaces, which in each case are exposed to the imaging light 3 on the surfaces M1 to M10 of the projection optics 22, that is to say the footprints of the mirrors M1 to MIO.
- the representation of FIG. 9 corresponds to that of FIG. 4.
- the largest maximum mirror diameter has the mirror MIO with a diameter of 850.8 mm, which is the image-side numerical aperture. None of the other mirrors Ml to M9 has a maximum diameter greater than 700 mm. Eight of the ten mirrors, namely mirrors M2 to M9, have a maximum mirror diameter that is less than 530 mm. Five of the ten mirrors, namely mirrors M5 to M9, have a maximum mirror diameter that is less than 425 mm.
- the optical design data of the projection optics 22 can be found in the following tables, which correspond in their structure to the tables for the projection optics 7 according to FIG. 2. embodiment
- a total reflectivity of the projection optics 22 is about 7.8%.
- a wavefront error rms is 13.3 ⁇ .
- the projection optics 22 has a picture-side numerical aperture of 0.55. In an imaging light plane parallel to the xz plane, the projection optics 22 has a reduction factor ⁇ x of 4.00. In the yz plane perpendicular thereto, the projection optics 22 have a reduction factor ⁇ y of 8.00.
- An object-side main beam angle is 5.1 °. From the object field 4 towards the first mirror M1 in the beam path of the projection optics 22, the main beams 16 extend diagonally. vergent. An entrance pupil of the projection optics 22 thus lies in the beam path of the imaging light 3 in front of the object field 4.
- a PupiUenobskuration of the projection optics 22 is 14% of the numerical aperture of the projection optics 22.
- An area fraction of 0.14 2 of a pupil of the projection optics 22 is thus obscured.
- An object image offset dois is about 2460 mm.
- the mirrors of the projection optics 22 can be accommodated in a cuboid with xyz edge lengths of 850 mm x 2823 mm x 1774 mm.
- the object plane 5 extends in the projection optics 22 at an angle of 0.1 ° to the image plane.
- a working distance between the mirror 9 closest to the image plane 9 and the image plane 9 is 85 mm.
- the projection optics 22 initially have an obscuration diaphragm OS and this next to an aperture diaphragm AS.
- Layers, orientations and edge contour shapes of the diaphragms AS, OS result from the tables 4a, 4b and 6.
- An inner diaphragm contour 23 of the aperture diaphragm AS is shown in FIG.
- An outer diaphragm contour 24 of the obscuration diaphragm OS is shown in FIG. 8.
- Both diaphragms AS, OS have an approximately elliptical shape with a large x / y aspect ratio, which is significantly larger than 5: 1 in each case.
- the aperture diaphragm AS has an extension of the inner diaphragm contour 23 of 362 mm in the x direction and y Direction an extension of the inner panel contour 23 of 40.5 mm.
- the obscuration diaphragm OS has an extension of the outer diaphragm contour 24 in the x-direction of 71.7 mm and in the y-direction of 8 mm.
- the respective large x / y aspect ratio of the diaphragms AS, OS results from the different imaging scales of the projection optics 22 in the x and y directions. Further, this large x / y aspect ratio is a consequence of the two second level intermediate images 19 and 20.
- the first second level intermediate image 19 is located in the projection optics 22 in the imaging light beam path between the mirrors M3 and M4. In the projection optics 22, the image plane 9 runs almost parallel to the object plane 5.
- the two diaphragms AS, OS are on non-curved surfaces, so in each case lie in exactly one diaphragm plane.
- the two aperture or arrangement planes of the aperture diaphragm AS on the one hand and the obscuration diaphragm OS on the other hand are spaced apart from one another.
- the projection exposure apparatus 1 is used as follows: First, the reflection mask 10 or the reticle and the substrate or the wafer 11 are provided. Subsequently, a structure on the reticle 10 is projected onto a photosensitive layer of the wafer 11 by means of the projection exposure apparatus 1. By developing the photosensitive layer, a microstructure or nanostructure is then produced on the wafer 11 and thus the microstructured component.
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CN201680065480.7A CN108351499B (zh) | 2015-11-09 | 2016-11-04 | 将物场成像到像场中的成像光学单元以及包括这样的成像光学单元的投射曝光设备 |
KR1020187016141A KR20180084073A (ko) | 2015-11-09 | 2016-11-04 | 이미지 필드에 오브젝트 필드를 이미징하기 위한 이미징 광학 유닛 및 이러한 이미징 광학 유닛을 갖는 투영 조명 시스템 |
US15/967,306 US10254653B2 (en) | 2015-11-09 | 2018-04-30 | Imaging optical unit for imaging an object field into an image field, and projection exposure apparatus including such an imaging optical unit |
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DE102015221983.6 | 2015-11-09 | ||
DE102015221983.6A DE102015221983A1 (de) | 2015-11-09 | 2015-11-09 | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik |
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US15/967,306 Continuation US10254653B2 (en) | 2015-11-09 | 2018-04-30 | Imaging optical unit for imaging an object field into an image field, and projection exposure apparatus including such an imaging optical unit |
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WO2017080926A1 true WO2017080926A1 (de) | 2017-05-18 |
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PCT/EP2016/076700 WO2017080926A1 (de) | 2015-11-09 | 2016-11-04 | Abbildende optik zur abbildung eines objektfeldes in ein bildfeld sowie projektionsbelichtungsanlage mit einer derartigen abbildenden optik |
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US (1) | US10254653B2 (de) |
KR (1) | KR20180084073A (de) |
CN (1) | CN108351499B (de) |
DE (1) | DE102015221983A1 (de) |
WO (1) | WO2017080926A1 (de) |
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EP3614194A1 (de) * | 2018-08-24 | 2020-02-26 | ASML Netherlands B.V. | Bestimmung einer pupillenanpassung |
JP7259413B2 (ja) * | 2019-03-01 | 2023-04-18 | セイコーエプソン株式会社 | 投写光学系、投写型画像表示装置、および撮像装置 |
JP7259411B2 (ja) * | 2019-03-01 | 2023-04-18 | セイコーエプソン株式会社 | 投写光学系、投写型画像表示装置、および撮像装置 |
DE102019208961A1 (de) | 2019-06-19 | 2020-12-24 | Carl Zeiss Smt Gmbh | Projektionsoptik und Projektionsbelichtungsanlage mit einer solchen Projektionsoptik |
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JP2000162502A (ja) * | 1998-09-21 | 2000-06-16 | Canon Inc | 光学系及びそれを有する光学機器 |
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DE10155711B4 (de) | 2001-11-09 | 2006-02-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Im EUV-Spektralbereich reflektierender Spiegel |
JP2005189247A (ja) * | 2003-12-24 | 2005-07-14 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
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EP1950594A1 (de) * | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
JP2010257998A (ja) * | 2007-11-26 | 2010-11-11 | Nikon Corp | 反射投影光学系、露光装置、及びデバイスの製造方法 |
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- 2015-11-09 DE DE102015221983.6A patent/DE102015221983A1/de not_active Ceased
-
2016
- 2016-11-04 CN CN201680065480.7A patent/CN108351499B/zh active Active
- 2016-11-04 KR KR1020187016141A patent/KR20180084073A/ko not_active Application Discontinuation
- 2016-11-04 WO PCT/EP2016/076700 patent/WO2017080926A1/de active Application Filing
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US20180246410A1 (en) | 2018-08-30 |
KR20180084073A (ko) | 2018-07-24 |
CN108351499B (zh) | 2021-04-09 |
US10254653B2 (en) | 2019-04-09 |
DE102015221983A1 (de) | 2017-05-11 |
CN108351499A (zh) | 2018-07-31 |
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