WO2017067149A1 - Ampoule à del et son procédé de fabrication - Google Patents

Ampoule à del et son procédé de fabrication Download PDF

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Publication number
WO2017067149A1
WO2017067149A1 PCT/CN2016/081509 CN2016081509W WO2017067149A1 WO 2017067149 A1 WO2017067149 A1 WO 2017067149A1 CN 2016081509 W CN2016081509 W CN 2016081509W WO 2017067149 A1 WO2017067149 A1 WO 2017067149A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat dissipation
dissipation base
wafer
preparation
led bulb
Prior art date
Application number
PCT/CN2016/081509
Other languages
English (en)
Chinese (zh)
Inventor
陈兵
李星
Original Assignee
亚浦耳照明股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 亚浦耳照明股份有限公司 filed Critical 亚浦耳照明股份有限公司
Publication of WO2017067149A1 publication Critical patent/WO2017067149A1/fr

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/503—Cooling arrangements characterised by the adaptation for cooling of specific components of light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/502—Cooling arrangements characterised by the adaptation for cooling of specific components
    • F21V29/508—Cooling arrangements characterised by the adaptation for cooling of specific components of electrical circuits
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V3/00—Globes; Bowls; Cover glasses
    • F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
    • F21V3/10—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings
    • F21V3/12—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by coatings the coatings comprising photoluminescent substances

Definitions

  • the invention belongs to the field of lighting fixtures, and in particular to an LED bulb lamp and a preparation method thereof.
  • LED lamps have been widely used in daily life, such as LED bulbs, because of their long life, low energy consumption, and energy saving.
  • LED lighting fixtures are mainly composed of structural components, power supplies and light sources.
  • the light source is mainly formed by lamp bead soldering on a circuit board or a COB (Chip On Board) integrated package.
  • the light source of the luminaire is coated with a thermal grease on the heat sink to form a heat balance structure.
  • the existing LED bulb structure has different heat conduction differences due to assembly process and component tolerance, thereby affecting the uniformity of light attenuation of the LED lamp; and the thermal resistance of the circuit board or COB combined with the heat sink is large, resulting in a decline in product performance;
  • the increase in the number of LEDs in the LED bulb, as well as the increase in power and brightness also causes the heat generated by the LED lamp to rise sharply.
  • the existing LED bulb itself has a heat dissipating device, the assembly between the light source and the structural member is complicated, the heat dissipation effect is poor, and the production cost is high and the efficiency is low.
  • the present invention provides an LED bulb and a preparation method thereof.
  • an LED bulb includes: a heat sink base, a plurality of wafers, a hemispherical structure, a power source, a lamp cap, and lampshade;
  • the heat dissipation base includes a line structure
  • the wafer is connected to the heat dissipation base
  • the hemispherical structure is used to coat the wafer
  • the power source is placed inside the heat dissipation base
  • the lamp cap is located at the bottom of the heat dissipation base, and the lamp cap and the heat dissipation base are electrically connected by wires;
  • the lamp cover is disposed on a top of the heat dissipation base.
  • the hemispherical structure is composed of a rubber material mixed with a phosphor.
  • the wafer is attached to the heat sink base by eutectic soldering or bonding.
  • the heat dissipation base is made of ceramic or metal material.
  • a method of preparing an LED bulb comprising the steps of:
  • the heat dissipation base is formed by the following steps:
  • the material of the heat dissipation base comprises a ceramic material or a metal heat dissipation material.
  • step b) further comprises:
  • the conductive paste comprises: silver, copper, tin, and/or nickel.
  • step b) further comprises:
  • step b) further comprises:
  • the temperature of the high temperature heating is from 1065 ° C to 1085 ° C.
  • the step c) is further Mounting the wafer on the wiring layer of the heat dissipation base by using a die bonder, and forming a solder paste on the bottom of the wafer, and eutectic soldering the wafer on the circuit layer of the heat dissipation base through a high temperature furnace .
  • the step c) is further: directly solidifying on the circuit layer for high-temperature sintering, and eutectic soldering the wafer on the circuit layer of the heat dissipation base.
  • the hemispherical structure is formed of a silica gel or a silicone material or a gel material mixed with a phosphor.
  • the LED bulb provided by the invention integrates the light source and the structural member, and changes the structure of the previous LED lighting fixture. Since the light source is directly packaged on the structural member, rapid thermal balance is achieved, the consistency is improved, and the materials and assembly processes such as the circuit board, the bracket, the thermal grease, the patch, etc. are reduced, thereby improving the product characteristics and reducing the production cost. Increased production efficiency.
  • the invention reduces the beam splitting link in the lamp bead production process, reduces the SMT (Surface Mount Technology) sticking lamp bead link, and simplifies the circuit board and the mounting circuit board to the heat dissipation substrate link; It has reduced the transportation and transportation links of each package, integrated the light source production supply chain, saved social resources, and truly achieved energy conservation and environmental protection.
  • SMT Surface Mount Technology
  • FIG. 1 is a schematic structural view of a specific embodiment of an LED bulb according to the present invention.
  • FIG. 2 is a schematic flow chart showing a specific embodiment of a method for preparing an LED bulb according to the present invention.
  • an LED bulb provided by the present invention includes a heat sink base 50, a plurality of wafers 20, a fluorescent gel structure 30, a power source 10, a lamp cap 40, and a lamp cover 70.
  • the heat dissipation base may be prepared by using a ceramic material such as Al 2 O 3 or AlN or a metal material such as aluminum or copper.
  • the heat dissipation base 50 includes a line structure.
  • the wafer 20 is attached to the heat sink base 50.
  • the wafer 20 is connected to the heat dissipation base 50 by eutectic soldering or bonding.
  • the wafer 20 is connected to the heat dissipation base 50 by eutectic soldering.
  • the fluorescent colloid structure 30 is a hemispherical structure for coating the wafer 20.
  • the fluorescent colloid structure is composed of a rubber material mixed with a phosphor.
  • the power source 10 is placed inside the heat dissipation base 50.
  • the power supply 10 is composed of an integrated circuit (IC), a plurality of resistors, capacitors, inductors, bridges and the like.
  • the base 40 is located at the bottom of the heat dissipation base 50, and the base 40 and the heat dissipation base 50 are electrically connected by wires.
  • the lamp cover 70 is disposed on the top of the heat dissipation base 50, and is preferably bonded to the heat dissipation base 50 by an adhesive.
  • FIG. 2 shows an LED bulb according to the present invention.
  • a heat dissipation base 50 is provided.
  • the material of the heat dissipation base 50 includes a ceramic material or a metal heat dissipation material.
  • the ceramic may be Al 2 O 3 , AlN or the like; the metal may be aluminum, copper or the like.
  • the heat dissipation base 50 is formed by first forming a cavity structure required by the heat dissipation base by a steel mold; then extruding by an extruder; and finally placing it in a high temperature tunnel furnace for high temperature sintering. Cooling base 50.
  • the heat sink base 50 thus prepared can achieve a good heat balance.
  • a wiring layer 60 is formed on the heat dissipation base 50.
  • the formation of the wiring layer 60 can be performed in a variety of ways, and the most suitable manner can be selected as needed. The formation of the wiring layer 60 will be described in detail below.
  • the heat dissipation base 50 is polished and polished to ensure the flatness of the surface of the circuit layer 60; and the cleaning and drying process is performed;
  • the high-temperature furnace sintering line is used to fully integrate the conductive paste with the heat dissipation base 50.
  • the conductive paste material may be a conductive material such as silver, copper, tin or nickel.
  • the heat dissipation base 50 is polished and polished to ensure the flatness of the surface of the circuit layer 60; and the cleaning and drying process is performed;
  • a copper metal composite layer is sputtered on the heat dissipation base 50.
  • the copper metal composite layer is sputtered on the heat dissipation base 50 by a thin film professional manufacturing technique-vacuum coating method.
  • the copper metal composite layer is: CuAlO 2 and CuAl 2 O 4 .
  • the photoresist is exposed, developed, etched, and stripped with a yellow light lithography
  • the thickness of the line is increased by electroplating and/or electroless plating
  • the high temperature heating temperature is from 1065 ° C to 1085 ° C, for example, 1065 ° C, 1075 ° C or 1085 ° C. More preferably, the high temperature heating temperature is from 1070 ° C to 1080 ° C, for example, 1070 ° C, 1075 ° C or 1080 ° C.
  • the temperature at which the high temperature is heated is critical to the formation of a composite metal substrate, and the optimum composite metal substrate can be formed only at a suitable temperature.
  • the circuit is prepared by etching.
  • step S103 the wafer 20 is eutectic soldered or bonded to the wiring layer 60 of the heat dissipation base 50.
  • the wafer is a planar structure or a flip-chip structure.
  • the wafer 20 is mounted on the wiring layer 60 of the heat dissipation base 50 by using a die bonder.
  • a solder paste is formed on the bottom of the wafer 20, and the wafer 20 is eutectic soldered to the wiring layer 60 of the heat dissipation base 50 by a high temperature furnace.
  • the high-temperature sintering is directly performed on the circuit layer 60, and the wafer 20 is eutectic soldered to the circuit layer of the heat dissipation base 50. 60 on.
  • a hemispherical structure is formed above the wafer 20, and the hemispherical structure is a fluorescent colloid structure 30.
  • the hemispherical structure is composed of a rubber material mixed with a phosphor. More preferably, the glue is a silicone or silicone material.
  • step S105 the power source 10 is mounted inside the heat dissipation base 50.
  • step S106 the lamp cap 40 is mounted on the bottom of the heat dissipation base 50.
  • step S107 the lamp cover 70 is mounted outside the hemispherical structure 30.
  • the invention directly forms the circuit layer 60 and the wafer on the heat dissipation base, thereby avoiding
  • the complicated operation of soldering the lamp bead (wafer) to the circuit board and then attaching the circuit board to the heat sink (heat dissipation substrate) improves the production efficiency and reduces the production cost.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

L'invention concerne une ampoule à DEL, l'ampoule à DEL comprenant : un support de dissipation de chaleur (50), une pluralité de puces (20), une structure hémisphérique (30), une alimentation électrique (10), un support de lampe (40), et un abat-jour (70) ; le support de dissipation de chaleur (50) comprenant sur celui-ci une structure de circuit ; les puces (20) étant connectées au support de dissipation de chaleur (50) ; la structure hémisphérique (30) étant utilisée pour couvrir les puces (20) ; l'alimentation électrique (10) étant disposée à l'intérieur du support de dissipation de chaleur (50) ; le support de lampe (40) étant situé au fond du support de dissipation de chaleur (50), et le support de lampe (40) étant connecté électriquement avec le support de dissipation de chaleur (50) par un conducteur ; et l'abat-jour (70) étant disposé au niveau de la partie supérieure du support de dissipation de chaleur (50). L'invention concerne également un procédé de fabrication d'une ampoule à DEL. La présente invention intègre la source de lumière et l'élément structural et peut obtenir un équilibre thermique rapide, ce qui simplifie le processus d'assemblage, réduit les coûts de production, et améliore l'efficacité de la production.
PCT/CN2016/081509 2015-10-22 2016-05-10 Ampoule à del et son procédé de fabrication WO2017067149A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510690637.2A CN105202393A (zh) 2015-10-22 2015-10-22 一种led球泡灯及其制备方法
CN201510690637.2 2015-10-22

Publications (1)

Publication Number Publication Date
WO2017067149A1 true WO2017067149A1 (fr) 2017-04-27

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PCT/CN2016/081509 WO2017067149A1 (fr) 2015-10-22 2016-05-10 Ampoule à del et son procédé de fabrication

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CN (2) CN105202393A (fr)
WO (1) WO2017067149A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105202393A (zh) * 2015-10-22 2015-12-30 上海亚浦耳照明电器有限公司 一种led球泡灯及其制备方法
CN106764561A (zh) * 2016-12-27 2017-05-31 江苏稳润光电科技有限公司 一种基于倒装led芯片真空封装的一体式灯具及制作方法
CN112020227A (zh) * 2020-09-16 2020-12-01 浙江常山德讯达电子科技有限公司 一种线路散热一体化led灯的生产工艺

Citations (5)

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JP2011014515A (ja) * 2009-07-02 2011-01-20 Aidou:Kk 照度並びに配光性に優れる照明具
CN102287788A (zh) * 2011-06-03 2011-12-21 厦门汇耕电子工业有限公司 完全一体化并带电路功能的散热结构体的制作方法
CN102767725A (zh) * 2012-07-30 2012-11-07 轻工业部南京电光源材料科学研究所 一种基于远程荧光光源模组球泡灯
CN204647931U (zh) * 2015-05-26 2015-09-16 中山市鼎立德光电科技有限公司 一种led连体灯丝灯
CN105202393A (zh) * 2015-10-22 2015-12-30 上海亚浦耳照明电器有限公司 一种led球泡灯及其制备方法

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* Cited by examiner, † Cited by third party
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CN102777776A (zh) * 2011-05-12 2012-11-14 深圳市华思科技股份有限公司 氧化铝陶瓷led球泡灯及其制造方法
CN103322437B (zh) * 2012-03-22 2016-12-14 赵依军 具有强散热能力的发光二极管球泡灯及其制造方法
CN203757406U (zh) * 2013-12-31 2014-08-06 福建省万邦光电科技有限公司 一种便于装配的led球泡灯
CN104896320A (zh) * 2014-03-06 2015-09-09 苏州同拓光电科技有限公司 Led灯

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011014515A (ja) * 2009-07-02 2011-01-20 Aidou:Kk 照度並びに配光性に優れる照明具
CN102287788A (zh) * 2011-06-03 2011-12-21 厦门汇耕电子工业有限公司 完全一体化并带电路功能的散热结构体的制作方法
CN102767725A (zh) * 2012-07-30 2012-11-07 轻工业部南京电光源材料科学研究所 一种基于远程荧光光源模组球泡灯
CN204647931U (zh) * 2015-05-26 2015-09-16 中山市鼎立德光电科技有限公司 一种led连体灯丝灯
CN105202393A (zh) * 2015-10-22 2015-12-30 上海亚浦耳照明电器有限公司 一种led球泡灯及其制备方法

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CN105202393A (zh) 2015-12-30
CN106122804A (zh) 2016-11-16

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