WO2015016651A1 - 태양전지 광흡수층 제조용 응집상 전구체 및 이의 제조방법 - Google Patents

태양전지 광흡수층 제조용 응집상 전구체 및 이의 제조방법 Download PDF

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WO2015016651A1
WO2015016651A1 PCT/KR2014/007092 KR2014007092W WO2015016651A1 WO 2015016651 A1 WO2015016651 A1 WO 2015016651A1 KR 2014007092 W KR2014007092 W KR 2014007092W WO 2015016651 A1 WO2015016651 A1 WO 2015016651A1
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Prior art keywords
solution
precursor
producing
phase
gallium
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PCT/KR2014/007092
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English (en)
French (fr)
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윤석희
윤석현
윤태훈
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주식회사 엘지화학
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Priority to EP14831806.6A priority Critical patent/EP3016149B1/en
Priority to CN201480034909.7A priority patent/CN105324851B/zh
Priority to ES14831806T priority patent/ES2869193T3/es
Priority to JP2016521234A priority patent/JP6338660B2/ja
Priority to US14/899,540 priority patent/US9887305B2/en
Publication of WO2015016651A1 publication Critical patent/WO2015016651A1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/32—Radiation-absorbing paints
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the present invention relates to agglomerate precursor for solar cell light absorption layer production and its manufacturing method.
  • (Se y S ,. y ) (CI (G) S) has a direct transition energy band gap of more than 1 eV, not only has a high light absorption coefficient, but it is also electro-optically stable, making it easy to It is a very ideal material for absorbing layers.
  • CI (G) S-based solar cells form solar cells by forming a light-absorbing layer of several microns in thickness.
  • the method of manufacturing the light-absorbing layer forms a thin film using precursors and vacuum deposition, which requires no precursors. Forming CI (G) S thin film
  • Sputtering, electrodeposition, and ink coating methods have recently been introduced to coat precursor materials under non-vacuum and then heat treat them.
  • the ink coating method can reduce the process cost and the uniform area.
  • active research is being actively conducted and various types of compounds or metals such as metal chalcogenide compounds, bimetallic metal particles, metal salts, or metal oxides are used as precursors for the ink coating method.
  • the present invention aims to solve technical problems that have been requested from the problems and past of the prior art as described above.
  • a coherent precursor comprising a first phase consisting of chalcogenide and a second phase consisting of chalcogenide containing rhythm (In) and / or gallium (Ga).
  • chalcogenide containing rhythm In
  • Ga gallium
  • the light absorbing layer manufacturing precursor according to the present invention is a cylindrical precursor.
  • the first phase consists of a copper (Cu) -containing chalcogenide and a second phase consists of an indium (In) and / or gallium (Ga) -containing chalcogenide, wherein the precursor phase precursor comprises 30% or more based on the total weight of the precursor in the light absorbing layer manufacturing ink solvent is separated into particle aggregates including the first phase and / or the second phase or independent particles having the first phase or the second phase. do.
  • particle aggregate refers to a precursor in which the independent particles are uniformly aggregated to include two or more phases, and the term 'particle aggregate' means that some of the precursor precursors are separated from each other. In a smaller range, it means that a small amount of independent particles are aggregated. Also, the term 'independent particle' means a single particle.
  • the particle size of the independent particles which is the basis of all configurations, can range from 1 nanometer to 100 nanometers, and in particular from 5 to 100 nanometers.
  • the particle size of the particle aggregate in which the independent particles are collected in a small amount is a concept encompassing a form in which two or more independent particles are collected, and may range from 2 nanometers to 200 nanometers in the widest range.
  • the particle diameters of the acicular precursors, which are their origins, may range from 10 nanometers to 500 nanometers in a larger range than the particle aggregates, and in detail, may be 15 nanometers to 300 nanometers.
  • chalcogenides are group VI elements, such as sulfur (S) and / or
  • the copper (Cu) -containing chalcogenide is Cu y S (0.5 ⁇ y ⁇ 2.0) and Cu y Se (0.5 ⁇ y ⁇ 2.0) May be one or more selected from the group consisting of rhythm (In) and / or gallium (Ga)
  • the chalcogenides are (In x (Ga) 1-x ) m Se n (0 ⁇ x ⁇ l, 0.5 ⁇ n / m ⁇ 2.5), and (In x (Ga) 1-x :) m S n (0 ⁇ x ⁇ l, 0.5 ⁇ n / m ⁇ 2.5) may be at least one selected from the group consisting of.
  • the component ratio of the chalcogenide element is based on copper (Cu), knot (In), and gallium (Ga). It can be 0.5 to 3 moles for 1 mole in total.
  • the component ratio of copper (Cu) may be 0.7 to 1.2 moles with respect to 1 mole of In + Ga components.
  • the first phase made of chalcogenide means that there is a great deal of existence, which is advantageous in terms of particle size growth, but there is a problem that Cu impurities are generated, and if it is less than 0.7 mole, a copper (Cu) -containing chalcogenide agent Due to the lack of one phase, the particle size becomes small and it is difficult to form a ⁇ -type CI (G) S thin film, which is not preferable because of poor performance.
  • the aggregated precursor according to the present invention is characterized in that the aggregated particles containing a certain amount of first and / or second phases, or first or second phases, are contained in a solvent for preparing a light absorbing layer. It has the property of separating into independent particles.
  • the bulbous precursors when some of the bulbous precursors are separated and distributed uniformly, they may spread more uniformly without partial aggregation in the bulbous precursor chain. It is possible to improve coating properties, to obtain uniformity in composition than to prepare ink by dispersing nanoparticles having a first phase or a second phase in a solvent separately, and includes all components that form a light absorption layer. It is possible to facilitate the growth of CI (G) S thin film rather than to manufacture ink using single phase particles.
  • the method for producing the acicular precursor is for producing sulfur (S) and / or selenium (Se).
  • the third solution is mixed with the mixture of step (iii) and reacted to form indium (In) and / or Synthesizing gallium (Ga) -containing chalcogenide particles;
  • a first phase consisting of copper (Cu) -containing chalcogenide and a second phase consisting of indium (In) and / or gallium (Ga) -containing chalcogenide synthesizing a precursor precursor for manufacturing a light absorption layer containing all phases;
  • a precursor precursor containing sulfur (S) and / or selenium (Se) may be produced.
  • a sixth solution containing a compound is mixed to prepare a mixture, which is then mixed with a solution containing indium (In) and / or gallium (Ga) -containing chalcogenide particles and a fourth solution in the process (V). In this way, the bulb precursor can also be manufactured.
  • the method of manufacturing the precursor precursor according to the present invention is produced through a continuous process in one reaction vessel as described above, and the first phase or It is possible to secure uniformity of composition compared to the case of separately synthesizing and mixing nanoparticles having a second phase, and to shorten the particle growth reaction time compared to using a single phase particle of CuInS (Se) 2. That is effective.
  • step (iv) when mixing the third solution with the mixed solution in step (iv), and in the solution containing the rhythm (In) and / or gallium (Ga) containing chalcogenide particles of step (iv)
  • stirring the mixture while slowly adding the third solution and the fourth solution may give a coherent precursor having a uniform composition and particle size.
  • indium (In) and / or gallium (V) of the above process (V) may be used to improve the dispersibility of manufactured precursor precursors and to obtain a uniform compositional distribution.
  • Ga When a fourth solution is mixed with a solution containing chalcogenide-containing particles or a mixture of the fifth solution and the sixth solution, a solution containing rhythmic (In) and / or gallium (Ga) -containing chalcogenide particles, And an additional additive may be added when the fourth solution is mixed.
  • the additive is not limited as long as it can be used as a dispersant.
  • PVP polyvinylpyrrolidone
  • It may be at least one selected from the group consisting of polyvinyl alcohol, and ethyl cellulose.
  • the reducing agent included in the first solution may be an organic reducing agent and / or an inorganic reducing agent, and specifically, LiBH 4) NaBH 4 , KBH 4 , Ca (BH 4 ) 2 , Mg ( BH 4 ) 2 , LiB (Et) 3 H, NaBH 3 (CN), NaBH (OAc) 3 , hydrazine,
  • the manufacturing method of the bulbous precursor is made by a solution process rather than a conventional vacuum process, thereby reducing the process cost.
  • the solvents of the first to sixth solutions are different from each other.
  • Triethylene glycol, dimethyl sulfoxide, dimethyl formamide and NMP may be at least one selected from the group consisting of, the alcohol solvent Methanol having 1 to 8 carbon atoms, ethane, propanol, butanol, pentanol, nucleic acid, heptanol, ' and octane.
  • the sulfur (S) compound as a Group VI source included in the second solution is, for example, S powder, H 2 S, Na 2 S, K 2 S, CaS, (C3 ⁇ 4) 2 S, H 2 S0 4 , and their hydrates and thiourea, and thioacetamide may be one or more selected from the group consisting of selenium (Se) compounds, for example , Se powder, H 2 Se, Na 2 Se, K 2 Se, CaSe, (CH 3 ) 2 Se, Se02, SeCl 4 , H 2 Se0 3 , H 2 Se0 4 and their hydrates and selenourea It may be one or more selected from the group consisting of, and selenous acid.
  • Se selenium
  • Chloride bromide, iodide, nitrate, nitrite, sulfate, acetate, acetate, sulfite, acetylacetonate And one or more forms selected from the group consisting of hydroxides.
  • the method for producing the bulbous precursor for producing sulfur containing sulfur (S) and / or selenium (Se) is another example, the method for producing the bulbous precursor for producing sulfur containing sulfur (S) and / or selenium (Se),
  • step (ii) indium (In) and / or gallium (Ga) -containing chalcogenide particles of step (ii).
  • a first phase consisting of a copper (Cu) -containing chalcogenide by mixing the third solution with a solution comprising a second phase consisting of chalcogenide (In) and / or gallium (Ga) synthesizing and purifying aggregated precursors for the production of light absorption layers containing all phases;
  • the manufacturing cost of the agglomerate precursor can be reduced to a solution process rather than a vacuum process.
  • the second method for manufacturing the above-mentioned bulbous precursors is also described in the first. Similar to the method for preparing the precursor, in order to secure a more detailed Group VI element, a third solution is added to a solution containing indium (In) and / or gallium (Ga) -containing chalcogenide particles in step (iii).
  • the mixed precursor can also be prepared by mixing together a fourth solution containing sulfur (S) and / or selenium (Se) compounds separately from the first solution of the above-mentioned process (i).
  • the use of single-phase particles of ⁇ has the effect of shortening the particle growth reaction time.
  • the third solution is shaken in a solution containing chalcogenide-containing particles containing rhythm (In) and / or gallium (Ga) in step (ii).
  • a coherent precursor having a uniform composition and particle size may be obtained.
  • the third solution is mixed with the solution containing indium (In) and / or gallium (Ga) -containing chalcogenide particles of step (iii).
  • Additives may be added when the solution, the third solution, and the fourth solution containing (In) and / or gallium (Ga) -containing chalcogenide particles are mixed.
  • the present invention also provides a method of manufacturing a thin film using the ink composition.
  • step (i) is a general organic solvent
  • alkanes alkenes
  • the alcohol solvent is ethanol, 1-propanol (1-propanol),
  • the amine solvent is triethyl amine, dibutyl amine, dipropyl amine, butylamine, ethanolamine,
  • DETA Diethylenetriamine
  • TETA Triethylenetetraine
  • the thiol-based solvent may be at least one selected from 1,2-ethanedithiol, pentanethiol, hexanethiol, and mercaptoethanol. It can be a solvent.
  • the alkane solvent may be one or more mixed solvents selected from hexane, heptane and octane.
  • the aromatic compounds solvents include toluene, xylene,
  • It may be one or more mixed solvents selected from nitrobenzene and pyridine.
  • the organic halides solvent is selected from chloroform, methylene chloride, tetrachloromethane, dichloroethane, and chlorobenzene. It can be one or more mixed solvents.
  • the nitrile solvent may be acetonitrile.
  • the ketone solvent may be one or more mixed solvents selected from acetone, cyclohexanone, cyclopentanone, and acetylacetone.
  • the ether solvent is ethyl ether
  • It may be one or more mixed solvents selected from tetrahydrofurane, and 1,4-dioxaneosis.
  • the sulfoxides solvents include ISO (dimethyl sulfoxide), and
  • It may be one or more mixed solvents selected from sulfolanes.
  • the amide solvent is DMF (dimethyl formamide), and
  • It may be one or more mixed solvents selected from n-methyl-2-pyrrolidoneosis.
  • the ester solvent is ethyl lactate
  • It may be one or more mixed solvents selected from r-butyrolactone and ethyl acetoacetate.
  • solvents may be one example and are not limited thereto.
  • it may be prepared by further adding an additive to the ink of step (i).
  • the additives include, for example, dispersants, surfactants, polymers, binders, crosslinkers, emulsifiers, defoamers, desiccants, fillers, extenders, thickeners, film conditioners, antioxidants, glidants, leveling additives, and corrosion agents. It can be any one or more selected from the group consisting of inhibitors, specifically polyvinylpyrrolidone (PVP), polyvinylalcohol, anti-terra 204, anti-terra
  • PVP polyvinylpyrrolidone
  • anti-terra 204 anti-terra
  • Anti-terra 205 (Anti-terra 205), ethyl cellulose, and
  • It may be one or more selected from the group consisting of DispersBYKlO.
  • the method of forming the coating layer in the above process (ii) may include, for example, wet coating, spray coating, spin coating, doctor blade coating, contact printing, upper feed reverse printing and lower printing.
  • Feed reverse printing, nozzle feed reverse printing, gravure printing, micro gravure printing, reverse micro gravure printing, lor coating, slot die Can be any one selected from the group consisting of coating, capillary coating, inkjet printing, jet deposition and spray deposition.
  • the heat treatment in step (iii) can be performed at a temperature in the range of 400 to 900 degrees Celsius.
  • a thin film of higher density solar cell may optionally include a selenization process
  • the selenization process may be accomplished by a variety of methods.
  • step (iii) it can be achieved by carrying out the heat treatment of step (iii) under conditions in which S or Se is present.
  • the condition in which the S or Se element is present is possible by supplying gas in the form of H 2 S or H 2 Se, or by heating Se or S to a gas.
  • step (iii) is performed.
  • the lamination may be made by a solution process or may be made by a deposition method.
  • the present invention also provides a thin film manufactured by the above method.
  • the thin film may have a thickness in the range of 0.5 to 5.0, and more specifically, the thin film may have a thickness of 0.5 to 3.0 mm3.
  • the thickness of the thin film is less than 0.5, the density and quantity of the light absorbing layer may not be sufficient, and the desired photoelectric efficiency may not be obtained. If the thin film exceeds 5.0, the distance that the carrier moves may increase. As a result, the probability of recombination increases, which leads to a decrease in efficiency.
  • the present invention provides a thin film solar cell manufactured using the thin film.
  • FIG. 1 is an electron microscope (SEM) of In 2 Se 3 -CuSe powder formed in Example 1.
  • SEM electron microscope
  • Example 2 is X-ray diffraction (XRD) of In 2 Se 3 -CuSe powder formed in Example 1
  • Example 3 is an electron micrograph (SEM) of the I Se 3 -CuSe powder formed in Example 2;
  • Example 4 is an X-ray diffraction (XRD) of In 2 Se 3 -CuSe powder formed in Example 2
  • Example 5 is an electron micrograph (SEM) of the In 2 Se 3 -CuSe powder formed in Example 3;
  • Example 6 is an XRD graph of In 2 Se r CuSe powder formed in Example 3.
  • Figure 7 shows In 0 . 7 Ga 0 . 3 S ei . Electron micrograph (SEM) of the 5- CuSe powder;
  • Figure 8 shows In 0 . 7 Gao. 3 S ei . XRD graph of 5- CuSe powder
  • Example 11 is an XRD graph of (In, Ga) 2 Se 3 -CuSe powder formed in Example 6;
  • FIG. 13 is an XRD graph of In 2 Se r CuSe powder formed in Example 7.
  • Example 17 is an XRD graph of the thin film prepared in Example 8.
  • Example 20 is an SEM photograph of the thin film prepared in Example 10.
  • FIG. 21 is an XRD graph of the thin film prepared in Example 10.
  • FIG. 22 is an SEM photograph of the thin film prepared in Example 11;
  • Example 23 is an XRD graph of the thin film prepared in Example 11.
  • FIG. 25 is an XRD graph of a thin film prepared in Comparative Example 2.
  • FIG. 26 is an IV characteristic graph of the thin film solar cell manufactured in Example 15.
  • a solution of a666 g of NaBH 4 dissolved in 50 ml of distilled water was prepared in a full flask under nitrogen atmosphere, and 1.135 g of H 2 Se0 3 was dissolved in 20 ml of distilled water, followed by stirring until it became clear. After adding (In, Ga) 2 Se 3 solution to the solution, 1.364 g of Q a 2 * 23 ⁇ 40 was dissolved in 50 ml of distilled water and stirred for 6 hours. The resulting solution was centrifuged and purified. After vacuum drying C Uo . 8 J no . 74 G ao . A particle having a composition of 26 S e 5 was obtained.
  • the analysis of the particle by ICP confirmed that the composition had a composition of Cu: In: Ga: Se: Na: B 17.62: 16.18: 5.61: 56.22: 4.16: 0.22 (mol%). These particles showed CuSe crystal phase as a result of XRD analysis, and it was confirmed that amorphous (3 ⁇ 4, 0 ⁇ 2 3 and good crystallinity CuSe were mixed. SEM-EDX and XRD results were analyzed in FIGS. 10 and 11. Appeared.
  • CuIn 0 prepared in Example 4. 7 Ga 0 . 3 a mixture of particles of 24% and CuSe particles of the composition of Se 25 at a rate of 1.2% of the spent glycol monomethyl, written propylene glycol pro day, ethanol amine, 1,2-propane dieul, diethylene glycol monoethyl Ink was prepared by adding to a common solvent made of ether and then dispersing. The obtained ink was coated on a Mo thin film coated on glass, and then dried up to 200 ° C. In the presence of Se
  • Particles of CuInSe 2 ⁇ composition prepared in Example 7 is ethanol, ethylene glycol
  • Ink was prepared by adding to a mixed solvent composed of cyclonucleated non-condensate, and dispersing it at 20% concentration.
  • the obtained ink was coated on a Mo thin film coated on glass, dried to 160 degrees, and pressed at a pressure of 300 bar.
  • the CIS thin film was obtained by heat treatment at 550 ° C. under dependence.
  • the SEM-EDX and XRD results of the obtained thin film are shown in FIGS. 22 and 23.
  • Particles of the composition of CuInSe 2 prepared in Comparative Example 1 were ethanol, ethylene glycol
  • Ink was prepared by adding to a mixed solvent composed of cyclonucleated non-condensate, and dispersing it at 20% concentration.
  • the obtained ink was coated on a Mo thin film coated on glass, dried to 160 degrees, and pressed at a pressure of 300 bar.
  • the CIS thin film was obtained by heat treatment at 550 ° C. under dependence. SEM-EDX and XRD results of the obtained thin film were shown in Figs. 24 and 25. As shown in Fig. 24, the thin film obtained from CuInSe 2 particles was very void. ) And low particle growth.
  • a CdS buffer layer was manufactured on the CIGS thin film manufactured in Example 8 by the CBD method, and ZnO and Al: ZnO were sequentially deposited by the sputtering method, followed by e-beam to A1 electrode.
  • a CdS buffer layer was prepared on the CIGS thin film prepared in Example 9 by CBD, ZnO and Al: ZnO were sequentially deposited by the sputtering method, and then a Ag electrode was raised by screen printing to prepare a cell.
  • a CdS buffer layer was manufactured on the CIGS thin film prepared in Example 10 by CBD method, and ZnO and Al: ZnO were sequentially deposited by sputtering method, and then a cell was prepared by covering the A1 electrode by e-beam method.
  • I-V current-voltage
  • a CdS buffer layer was prepared on the CIS thin film prepared in Example 11 by using a CBD method, and ZnO and Al: ZnO were sequentially deposited by a sputtering method, and then a cell was prepared by raising an A1 electrode with an e-beam.
  • a CdS buffer layer was manufactured on the CIS thin film prepared in Comparative Example 2 by the CBD method.
  • J sc which is a variable for determining the efficiency of the solar cell described in Table 2, represents the current density.
  • V oc is the open circuit voltage measured at zero output current
  • photoelectric efficiency is the ratio of the cell output to the amount of energy of light incident on the solar panel
  • FF is the maximum power point. Is the product of the current density and the voltage value divided by the product of V oc , J s , and.
  • Agglomerated precursors comprising a first phase consisting of a second phase consisting of chalcogenide containing rhythm (In) and / or gallium (Ga) are produced via a continuous process in one reactor. If the thin film is used to produce a thin film, not only has a more uniform composition as a whole, but also stabilizes oxidation and contains S or Se in the precursor itself, thereby increasing the content of group VI elements in the final thin film to produce a high quality thin film. It can be manufactured.

Abstract

본 발명은 태양전지의 광흡수층 제조용 응집상 전구체(aggregate phase precursor)로서, 구리(Cu) 함유 칼코게나이드로 이루어진 제 1상(phase)과, 인듐(In) 및/또는 갈륨(Ga) 함유 칼코게나이드로 이루어진 제 2상(phase)을 포함하고, 상기 응집상 전구체는 광흡수층 제조용 잉크 용매에서 전구체 전체 중량을 기준으로 30% 이상이 제 1상 및/또는 제 2상을 포함하는 입자 응집체들 또는 제 1상 또는 제 2상을 갖는 독립적 입자들로 분리되는 것을 특징으로 하는 광흡수층 제조용 응집상 전구체 및 이의 제조 방법에 관한 것이다.

Description

명세서
발명의명칭:태양전지광흡수층제조용웅집상전구체및이의 제조방법
기술분야
[1] 본발명은태양전지광흡수층제조용응집상전구체및이의제조방법에관한 것이다.
배경기술
[2] 최근환경문제와천연자원의고갈에대한관심이높아지면서,환경오염에대한 문제가없으며에너지효율이높은대체에너지로서의태양전지에대한관심이 높아지고있다.태양전지는구성성분에따라실리콘태양전지，박막형화합물 태양전지,적층형태양전지등으로분류되며,이중실리콘반도체태양전지가 가장폭넓게연구되어왔다.
[3] 그중최근에는박막형화합물태양전지가활발하게연구，개발되고있다.
[4] 박막형화합물반도체증 3원화합물에속하는 I-III-VI족화합물인 CuGn^Ga
)(SeyS,.y) (CI(G)S)는 1 eV이상의직접천이형에너지밴드갭을가지고있고,높은 광흡수계수를가질뿐만아니라，전기광학적으로매우안정하여태양전지의 , 광흡수층으로매우이상적인소재이다.
[5] CI(G)S계태양전지는수마이크론두께의광흡수층을형성하여태양전지를 만드는데,광흡수층의제조방법으로는크게전구체가필요없는진공증착법과 전구체로박막을형성한다음열처리를통해 CI(G)S박막을형성하는
스퍼터링 (sputtering),전기증착법 (electrodeposition),및최근，비진공하에서 전구체물질올도포한후이를열처리하는잉크코팅방법이소개되었다.이중, 잉크코팅방법^공정단가를낮출수있으며，대면적을균일하게제조할수 있어최근연구가활발하게진행되고있으며，잉크코팅방법에사용되는 전구체로는금속칼코게나이드화합물，바이메탈릭금속입자,금속염，또는 금속산화물등여러형태의화합물또는금속이사용된다.
[6] 구체적으로,금속칼코게나이드화합물을전구체로사용하는경우，크게 Cu-Se 및 In-Se화합물을흔합하여사용하거나， CuInSe2의단일상입자를합성하여 사용하게되는데，흔합입자의경우，부분적으로조성이불균일한코팅막이 만들어질수있고， CuInSe2의단일상입자의경우，입자성장에오랜반웅시간이 필요한문제가있다ᅳ
[7] 따라서，전체적으로보다균일한조성을갖고산화에안정할뿐아니라，막
밀도가증가된높은효율의광흡수층을형성할수있는전구체에대한기술의 필요성이높은실정이다.
발명의상세한설명
기술적과제 [8] 본발명은상기와같은종래기술의문제점과과거로부터요청되어은기술적 과제를해결하는것을목적으로한다.
[9] 본출원의발명자들은심도있는연구와다양한실험을거듭한끝에，
광흡수층을형성하는구성성분을모두함육하도록구리 (Cu)함유
칼코게나이드로이루어진제 1상 (phase)과,인듬 (In)및 /또는갈륨 (Ga)함유 칼코게나이드로이루어진제 2상 (phase)을포함하는웅집상전구체를 개발하였고,이를사용하여박막을제조하는경우，박막전체적으로균일한 조성을가질뿐아니라，산화에안정하고，전구체자체에 S또는 Se를
포함함으로써최종박막내에 VI족원소의함유량을높여양질의박막을제조할 수있는것을확인하고，본발명을완성하기에이르렀다. .
과제해결수단
[1이 따라서,본발명에따른광흡수층제조용전구체는,웅집상전구체로서，
구리 (Cu)함유칼코게나이드로이루어진제 1상 (phase)과,인듐 (In)및 /또는 갈륨 (Ga)함유칼코게나이드로이루어진제 2상 (phase)을포함하고,상기웅집상 전구체는광흡수층제조용잉크용매에서전구체전체중량을기준으로 30% 이상이제 1상및 /또는제 2상을포함하는입자웅집체들또는제 1상또는제 2 상을갖는독립적입자들로분리되는것을특징으로한다.
[11] 본발명에있어서사용된용어 '웅집상전구체 (aggregate phase precursor)'는
2종류이상의상 (phase)올포함하도록독립적입자들이균일하게응집되어있는 형태의전구체를의미하고,용어 '입자웅집체 (particle aggregate)'는상기웅집상 전구체들의일부가떨어져나은것으로서,웅집상전구체보다작은범위에서 독립적입자들이소정량응집되어있는것을의미한다.또한，용어 '독립적 입자 (independent particle)'은단일의입자를의미한다.
[12] 따라서,본발명에서웅집상전구체,입자웅집체,및독립적입자는모두
구별되는개념으로사용된다. '
[13] 하나의구체적인예에서 ,모든구성의기본이되는독립적입자의입경은 1 나노미터내지 100나노미터일수있고，상세하게는 5나노미터내지 100 나노미터일수있다.
[14] 또한,상기독립적입자들이소정량웅집된형태의입자웅집체의입경은， 독립적입자가둘이상웅집되어있는형태부터총괄되는개념인바,가장넓은 범위에서 2나노미터내지 200나노미터일수있고，이들의기원이되는상기 웅집상전구체의입경은，상기입자응집체보다큰범위에서 10나노미터내지 500나노미터일수있고，상세하게는, 15나노미터내지 300나노미터일수있다.
[15] 한편,본발명에서 '칼코게나이드'는 VI족원소,예를들어，황 (S)및 /또는
셀레늄 (Se)을포함하는물질을의미하는바,하나의구체적인예에서,상기 구리 (Cu)함유칼코게나이드는 CuyS (0.5<y<2.0)및 CuySe (0.5≤y≤2.0)로 이루어진군으로부터선택되는하나이상일수있고,인듬 (In)및 /또는갈륨 (Ga) 칼코게나이드는 (Inx(Ga)1-x)mSen(0≤x≤l, 0.5<n/m<2.5),및 (Inx(Ga)1-x：) mSn (0≤x≤l, 0.5≤n/m≤2.5)로이루어진군으로부터선택되는하나이상일수있다.
[16] 상기와같이,웅집상전구체가 2종류의상을포함하는경우，웅집상전구체 전체를기준으로，칼코게나이드원소의성분비는구리 (Cu)와인듭 (In),및 갈륨 (Ga)을합한 1몰에대해 0.5내지 3몰일수있다.
[17] 상기범위를벗어나， 0.5몰보다적은경우에는 , VI족원소의충분한제공이 불가능하므로부분적으로 VI족원소가부족한막이형성될수있고， 3몰을 초과하여포함되는경우，박막내 VI족원소의불균일한분포로인해막성장의 불균일성을초래하므로바람직하지않다.
[18] 또한，응집상전구체전체를기준으로,구리 (Cu)의성분비는 In+Ga의성분 1몰에대해 0.7내지 1.2몰일수있다.
[19] 상기범위를벗어나， 1.2몰을초과하는경우에는구리 (Cu)함유
칼코게나이드로이루어진제 1상이상대적으로많이존재함을의미하는바, 입도성장면에서유리하지만， Cu불순물이생성되는문제가있고， 0.7몰미만인 경우에는구리 (Cu)함유칼코게나이드로이루어진제 1상의부족으로인해 입도가작아지고 , ρ형의 CI(G)S박막을형성하기어려워성능이좋지못한 문제가있는바바람직하지않다.
[20] 본발명에따른응집상전구체는，앞서설명한바와같이，광흡수층제조용잉크 용매에서일정량이상이제 1상및 /또는제 2상을포함하는입자웅집체들또는 제 1상또는제 2상을갖는독립적입자들로분리되는특성을갖는다.
[21] 상기와같이웅집상전구체의일부가떨어져나와균일하게분산되어존재하는 경우에는，웅집상전구체인상태에서보다부분적인뭉침없이더균일하게퍼질 수있는바，박막의제조를위한잉크코팅시코팅특성을향상시킬수있고,제 1 상또는제 2상을갖는나노입자를개별적으로용매에분산시켜잉크를 제조하는경우보다조성의균일성을확보할수있으며,광흡수층을형성하는 구성성분을모두포함하는단일상입자를사용하여잉크를제조하는경우보다 CI(G)S박막성장을원활이할수있다.
[22] 상기에서광흡수층제조용잉크용매는이후별도로설명한다.
[23] 이러한광흡수층제조용웅집상전구체를제조하는방법은，크게두가지
방법으로구분할수있다.
[24] 첫번째예에서，황 (S)및 /또는샐레늄 (Se)을포함하도록제조하기위한상기 웅집상전구체의제조방법은,
[25] (i)환원제를포함하는제 1용액올준비하는과정;
[26] (ii)황 (S)및 /또는셀레늄 (Se)화합물을포함하는제 2용액，인듐 (In)염및 /또는 갈륨 (Ga)염을포함하는제 3용액，및구리 (Cu)염을포함하는제 4용액을 준비하는과정 ;
[27] (iii)상기제 1용액과제 2용액을혼합하여혼합액을제조하는과정;
[28] (iv)상기과정 (iii)의혼합액에제 3용액을혼합하고반웅시켜인듐 (In)및 /또는 갈륨 (Ga)함유칼코게나이드입자를합성하는과정；및
[29] (V)상기과정 (iv)의인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드입자를
포함하는용액에상기제 4용액을혼합하여,구리 (Cu)함유칼코게나이드로 이루어진제 1상 (phase)과,인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드로 이루어진제 2상 (phase)을모두포함하는광흡수층제조용웅집상전구체를 합성하는과정 ;
[30] 을포함하는것을특징으로한다.
[31] 또한,황 (S)및 /또는셀레늄 (Se)을포함하는웅집상전구체를제조하는
방법으로서，더욱충분한 VI족원소의확보를위해서,상기과정 (V)이전에 과정 (i)내지과정 (iii)과별도로환원제를포함하는제 5용액및황 (S)및 /또는 '셀레늄 (Se)화합물을포함하는제 6용액올혼합하여흔합액을제조하고，이를 과정 (V)의인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드입자를포함하는용액 및제 4용액과함께흔합하는방법으로도웅집상전구체를제조할수있다.
[32] 상기어느경우에의하든，본발명에따른웅집상전구체의제조방법은，상기와 같이하나의반웅기내에서연속적인공정올통해제조되는바,앞서설명한 독특한특성을나타내면서，제 1상또는제 2상을갖는나노입자를개별적으로 합성하여흔합하는경우에비해조성의균일성을확보할수있을뿐아니라, CuInS(Se)2의단일상입자를사용하는경우에비해,입자성장반웅시간올 단축시킬수있는효과가있다.
[33] 특히，과정 (iv)에서흔합액에제 3용액을혼합할때，그리고,과정 (iv)의인듬 (In) 및 /또는갈륨 (Ga)함유칼코게나이드입자를포함하는용액에상기제 4용액을 흔합할때，상기제 3용액및제 4용액을천천히적가하면서상기흔합물을 교반하면조성및입자크기가균일한형태의응집상전구체를얻을수도있다.
[34] 한편，하나의구체적인예에서,두가지경우모두，제조되는웅집상전구체들의 분산성을향상시키고,균일한조성의분포를얻기위해상기과정 (V)의인듐 (In) 및 /또는갈륨 (Ga)함유칼코게나이드입자를포함하는용액에제 4용액을 흔합시또는상기제 5용액과제 6용액의혼합액,인듬 (In)및 /또는갈륨 (Ga) 함유칼코게나이드입자를포함하는용액，및제 4용액을흔합시추가로 첨가제를첨가할수있다.
[35] 상기첨가제는,분산제로서사용될수있는물질이면한정되지아니하나，예를 들어，폴리비닐피로리돈 (Polyvinylpyrrolidone: PVP),
폴리비닐알코올 (Polyvinylalcohol),및에틸샐를로오스 (ethyl cellulose)로 이루어진군에서선택되는어느하나이상일수있다.
[36] 하나의구체적인예에서，상기제 1용액에포함되는환원제는유기환원제 및 /또는무기환원제일수있고,상세하게는， LiBH4) NaBH4, KBH4, Ca(BH4)2, Mg(BH4)2, LiB(Et)3H, NaBH3(CN), NaBH(OAc)3,하이드라진,
아스코르브산 (ascorbic acid)및트리에탄올아민 (triethanolamine)으로이루어진 군에서선택되는하나일수있다. [37] 따라서 ,상기웅집상전구체의제조방법은기존의진공공정이아닌용액 공정으로이루어지므로공정비용을낮출수있다.
[38] 하나의구체적인예에서 ,상기제 1용액내지제 6용액의용매는서로
독립적으로물,알코을류,아세트산，디에틸렌글리콜 (DEG; diethylene glycol), 오레일아민 (oleylamine),에틸렌글리콜 (ethyleneglycol),
트리에틸렌글리콜 (triethylene glycol),디메틸설폭사이드 (dimethyl sulfoxide), 디메틸포름아마이드 (dimethyl formamide)및 NMP(N-methyl-2-pyrrolidone)로 이루어진군에서선택되는하나이상일수있고,상기알코올류용매는,탄소수 1개내지 8개를갖는메탄올,에탄을，프로판올，부탄올，펜탄올,핵산올，헵탄올， ' 및옥탄을일수있다.
[39] 하나의구체적인예에서，상기제 2용액에포함되는 VI족소스 (source)로서의 황 (S)화합물은예를들어， S분말， H2S, Na2S, K2S, CaS, (C¾)2S, H2S04,및이들의 수화물과티오요소 (thiourea),및티오아세트아미드 (thioacetamide)으로이루어진 군에서선택되는하나이상일수있고，셀레늄 (Se)화합물은,예를들어 , Se분말， H2Se, Na2Se, K2Se, CaSe, (CH3)2Se, Se02, SeCl4, H2Se03, H2Se04및이들의 수화물과썰레노유레아 (selenourea),및셀레노우스산 (selenous acid)으로 이루어진군에서선택되는하나이상일수있다.
[40] 하나의구체적인예에서제 3용액및제 4용액에포함되는염은,
염화물 (chloride),브름화물 (bromide),요오드화물 (iodide),질산염 (nitrate), 아질산염 (nitrite),황산염 (sulfate),아세트산염 (acetate),아황산염 (sulfite), 아세틸아세토네이트염 (acetylacetonate)및수산화물 (hydroxide)로이루어진 군에서선택되는하나이상의형태일수있다.
[41] 한편，또다른예에서,황 (S)및 /또는셀레늄 (Se)을포함하도톡제조하기위한 상기웅집상전구체의제조방법은，
[42] (i)황 (S)및 /또는셀레늄 (Se)화합물을포함하는제 1용액,인듐 (In)염또는
인듬 (In)염및갈륨 (Ga)염을포함하는제 2용액，및구리 (Cu)염을포함하는제 3 용액을준비하는과정;
[43] (ii)상기제 1용액과제 2용액을혼합하고반응시켜인듐 (In)및 /또는갈튬 (Ga) 함유칼코게나이드입자를합성하는과정 ;및
[44] (iii)상기과정 (ii)의인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드입자를
포함하는용액에상기제 3용액을혼합하여구리 (Cu)함유칼코게나이드로 이루어진제 1상 (phase)과,인듬 (In)및 /또는갈륨 (Ga)함유칼코게나이드로 이루어진제 2상 (phase)을모두포함하는광흡수층제조용응집상전구체를 합성하고정제하는과정 ;
[45] 을포함하는것을특징으로한다.
[46] 따라서，상기응집상전구체의제조방법역시기존의진공공정이아닌용액 공정으로이루어지므로공정비용을낮출수있다.
[47] 상기의웅집상전구체를제조하는두번째방법역시,첫번째기술한웅집상 전구체의제조방법과유사하게，더욱층분한 VI족원소의확보를위해서，상기 과정 (iii)의인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드입자를포함하는 용액에제 3용액을흔합시상기과정 (i)의제 1용액과는별도로황 (S)및 /또는 셀레늄 (Se)화합물을포함하는제 4용액을함께혼합하는방법으로도웅집상 전구체를제조할수있다.
[48] 상기어느경우에의하든,본발명에따른웅집상전구체의제조방법은,
상기에서언급한바와같이,하나의반웅기내에서연속적인공정을통해 제조되는바,앞서설명한독특한특성을나타내면서,제 1상또는제 2상을 갖는나노입자를개별적으로합성하여흔합하는경우에비해조성의균일성을 확보할수있을뿐아니라， ^^ 의단일상입자를사용하는경우에비해, 입자성장반웅시간을단축시킬수있는효과가있다.
[49] 또한,제 1용액과제 2용액을흔합할때，그리고，과정 (ii)의인듬 (In)및 /또는 갈륨 (Ga)함유칼코게나이드입자를포함하는용액에상기제 3용액을흔합할 때，상기제 2용액 제 3용액을천천히적가하면서상기흔합물을교반하면 조성및입자크기가균일한형태의웅집상전구체를얻을수도있다.
[50] 하나의구체적인예에서,두가지경우모두,제조되는웅집상전구체들의
분산성을향상시키고，균일한조성의분포를얻기위해상기과정 (iii)의인듐 (In) 및 /또는갈륨 (Ga)함유칼코게나이드입자를포함하는용액에제 3용액을 혼합시또는상기인듬 (In)및 /또는갈륨 (Ga)함유칼코게나이드입자를포함하는 용액，제 3용액,및제 4용액을흔합시추가로첨가제를첨가할수있다.
[51] 이때,첨가제의구체적인예는상기에서설명한것과동일하다.
[52] 또한，그밖의상기황 (S)화합물，셀레늄 (Se)화합물，제 1용액내지제 4용액의 용매및염의종류는상기에서설명한것과동일하다.
[53] 본발명은또한,상기잉크조성물을사용하여박막을제조하는방법을
제공한다.
[54] 본발명에따른박막의제조방법은,
[55] (i)구리 (Cu)함유칼코게나이드로이루어진제 1상 (phase)과，인듬 (In)및 /또는 갈륨 (Ga)함유칼코게나이드로이루어진제 2상 (phase)을포함하는광흡수층 제조용웅집상전구체를용매에분산하여잉크를제조하는과정;
[56] (ii)전극이형성된기재상에상기잉크를코팅하는과정；및
[57] (iii)상기전극이형성된기재상에코팅된잉크를건조한후열처리하는과정；
[58] 을포함하는것을특징으로한다.
[59] 하나의구체적인예에서，상기과정 (i)의용매는일반적인유기용매라면
특별히제한없이사용할수있는데알칸계 (alkanes),알켄계 (alkenes),
알킨계 (alkynes),방향족화합물계 (aromatics),케톤계 (ketons),니트릴계 (nitriles), 에테르계 (ethers),에스테르계 (esters),유기할로겐화물계 (organic halides), 알코올계 (alcohols),아민계 (amines),티을계 (thiols),카르복실산계 (carboxylic acids),수소화인계 (phosphines),아인산계 (phosphites),인산염계 (phosphates), 술폭시화물계 (sulfoxides),및아미드계 (amides)증에서선택된유기용매를 단독으로사용하거나이돌중에서선택된하나이상의유기용매가흔합된 형태로사용할수있다.
[60] 구체적으로，상기알코을계용매는에탄올, 1-프로판올 (1-propanol),
2-프로판올 (2-propanol), 1-펜타놀 (l-pentanol), 2_펜타놀 (2-pentanol),
1-핵사놀 (l-hexanol), 2-핵사놀 (2-hexanol), 3-핵사놀 (3-hexanol),헵타놀 (heptanol), 옥타놀 (octanol), EG(ethylene glycol), DEGMEE(diethylene glycol monoethyl ether), EGMME(ethylene glycol mono methyl ether), EGMEE(ethylene glycol monoethyl ether), EGDME(ethylene glycol dimethyl ether), EGDEE(ethylene glycol diethyl ether), EGMPE(ethylene glycol monopropyl ether), EGMBE(ethylene glycol monobutyl ether), 2-메틸 -1-프로판을 (2-methyl-l-propanol),
시클로펜탄을 (cyclopentanol),시클로핵산을 (cyclohexanol), PGPE(propylene glycol propyl ether), DEGDME(diethylene glycol dimethyl ether), 1 ,2-PD( 1 ,2-propanediol) , 1 ,3-PD(l,3-propanediol), 1 ,4-BD(l,4-butanediol), 1 ,3-BD(l,3-butanediol), 알파테르피네올 (ot-terpineol), DEG (diethylene glycol),글리세롤 (glycerol),
2-에틸아미노에탄을 (2-(ethylamino)ethanol),
2- (메틸아미노)에탄올 (2-(methylamino)ethanol),및
2-아미노 -2-메틸 -1-프로판올 (2-amino-2-methyl-l-propanol)증에서선택되는하나 이상의흔합용매일수있다.
[61] 상기아민계용매는트리에틸아민 (triethyl amine),디부틸아민 (dibutyl amine), 디프로필아민 (dipropyl amine),부틸아민 (butylamine),에탄올아민 (ethanolamine),
DETA(Diethylenetriamine), TETA(Triethylenetetraine),
트리에탄올아민 (Triethanolamine), 2-아미노에틸피페라진 (2-aminoethyl piperazine), 2-하드록시에틸피페라진 (2-hydroxy ethyl piperazine),
다이부틸아민 (dibutylamine),및
트리스 (2-아미노에틸)아민 (tris(2-aminoethyI)aniine)증에서선택되는하나이상의 혼합용매일수있다.
[62] 상기티을계용매는 1,2-에탄디티올 (1,2-ethanedithiol),펜탄티올 (pentanethiol), 핵산티을 (hexanethiol),및메르캅토에탄을 (mercaptoethanol)증에서선택되는 하나이상의흔합용매일수있다.
[63] 상기알칸계 (alkane)용매는핵산 (hexane),헵탄 (heptane),옥탄 (octane)중에서 선택되는하나이상의혼합용매일수있다.
[64] 상기방향족화합물계 (aromatics)용매는롤루엔 (toluene),자일렌 (xylene),
니트로벤젠 (nitrobenzene)，피리딘 (pyridine)중에서선택되는하나이상의혼합 용매일수있다.
[65] 상기유기할로겐화물계 (organic halides)용매는클로로포름 (chloroform),메틸렌 클로라이드 (methylene chloride),테트라클로로메탄 (tetrachloromethane), 디클로로에탄 (dichloroethane)，및클로로벤젠 (chlorobenzene)증에서선택되는 하나이상의흔합용매일수있다.
[66] 상기니트릴계 (nitrile)용매는아세토니트릴 (acetonitrile)일수있다.
[67] 상기케톤계 (ketone)용매는아세론 (acetone),시클로핵사논 (cyclohexanone), 시클로펜타논 (cyclopentanone),및아세틸아세톤 (acetyl acetone)중에서선택되는 하나이상의혼합용매일수있다.
[68] 상기에테르계 (ethers)용매는에틸에테르 (ethyl ether),
테트라하이드로퓨란 (tetrahydrofurane),및 1,4-다이옥산 (1,4-dioxane)증에서 선택되는하나이상의흔합용매일수있다.
[69] 상기술폭시화물계 (sulfoxides)용매는 ISO(dimethyl sulfoxide),및
술포란 (sulfolane)중에서선택되는하나이상의흔합용매일수있다.
[70] 상기아미드계 (amide)용매는 DMF(dimethyl formamide),및
NMP(n-methyl-2-pyrrolidone)증에서선택되는하나이상의혼합용매일수있다.
[71] 상기에스테르계 (ester)용매는에틸락테이트 (ethyl lactate),
r-부틸로락톤 (r-butyrolactone),및에틸아세토아세테이트 (ethyl acetoacetate) 중에서선택되는하나이상의흔합용매일수있다ᅳ
[72] 상기카르복실산계 (carboxylic acid)용매는프로피은산 (propionic acid),핵산 산 (hexanoic acid),메소 -2,3-디메르캅토숙신산 (meso-23-dimercaptosuccinic acid), 티오락틱산 (thiolactic acid),및티오글리콜산 (thioglycolic acid)중에서선택되는 하나이상의흔합용매일수있다.
[73] 그러나，상기용매들은하나의예시일수있으며이에한정되지않는다.
[74] 경우에따라서는,상기과정 (i)의잉크에첨가제를더첨가하여제조될수있다.
[75] 상기첨가제는예를들어 ,분산제，계면활성제，중합체，결합제 ,가교결합제， 유화제,소포제,건조제,충전제,증량제,증점화제，필름조건화제,항산화제, 유동제,평활성첨가제，및부식억제제로이루어진군에서선택되는어느하나 이상일수있고,상세하게는폴리비닐피로리돈 (polyvinylpyrrolidone: PVP), 폴리비닐알코올 (Poly vinylalcohol),안티테라 204(Anti-terra 204),안티테라
205(Anti-terra 205),에틸셀를로오스 (ethyl cellulose),및
디스퍼스 BYKnO(DispersBYKl lO)으로이루어진군에서선택되는어느하나 이상일수있다.
[76] 상기과정 (ii)의코팅층을형성하는방법은，예를들어，습식코팅，분무코팅 , 스핀코팅，닥터블레이드 (doctor blade)코팅，접촉프린팅，상부피드리버스 (feed reverse)프린팅，하부피드리버스 (feed reverse)프린팅，노즐피드리버스 (nozzle feed reverse)프린팅,그라비어 (gravure)프린팅,마이크로그라비어 (micro gravure) 프린팅，리버스마이크로그라비어 (reverse micro gravure)프린팅，를러코팅,슬롯 다이 (slot die)코팅，모세관코팅,잉크젯프린팅,젯 (jet)침착，분무침착으로 이루어진군에서선택되는어느하나일수있다.
[77] 상기과정 (iii)의열처리는섭씨 400내지 900도범위의온도에서수행될수
있다. [78] 한편，더욱높은밀도의태양전지의박막을제조하기위해서는선택적으로 샐렌화공정이포함될수있고，상기셀렌화공정은다양한방법에의해 이루어질수있다.
[79] 첫번째예에서，상기과정 (i)에서광흡수층제조용응집상전구체와함께 S 및 /또는 Se를입자형태로용매에분산하여잉크를제조하고,과정 (iii)의 열처리를통함으로써달성될수있다.
[80] 두번째예에서 ,상기과정 (iii)의열처리를 S또는 Se가존재하는조건에서 수행함으로써달성될수있다.
[81] 상세하게는,상기 S또는 Se원소가존재하는조건은 H2S또는 H2Se의가스 형태로공급하거나， Se또는 S를가열하여기체로공급함으로써가능하다.
[82] 세번째예에서,상기과정 (ii)이후에 S또는 Se를적층한후과정 (iii)을
진행하여달성될수있다.상세하게는,상기적층은용액공정에의하여 이루어질수있고증착방법에의해이루어질수도있다.
[83] 본발명은또한,상기방법으로제조된박막을제공한다.
[84] 상기박막은 0.5 내지 5.0 의범위내에서두께를가질수있으며 ,더욱 상세하게는박막의두께는 0.5 내지 3.0卿일수있다ᅳ
[85] 박막의두께가 0.5 미만인경우에는광흡수층의밀도와양이층분치못해 소망하는광전효율을얻을수없고，박막이 5.0 를초과하는경우에는, 전하운반자 (carrier)가이동하는거리가증가함에따라재결합 (recombination) o 일어날확률이높아지므로이로인한효율저하가발생하게된다.
[86] 더나아가，본발명은상기박막을사용하여제조되는박막태양전지를
제공한다.
[87] 박막의태양전지를제조하는방법은당업계에이미알려져있으므로본
명세서에는그에대한설명을생략한다.
도면의간단한설명
[88] 도 1은실시예 1에서형성된 In2Se3-CuSe분말의전자현미경 (SEM).사진이다;
[89] 도 2는실시예 1에서형성된 In2Se3-CuSe분말의 XRD(X-ray diffraction)
그래프이다;
[90] 도 3은실시예 2에서형성된 I Se3-CuSe분말의전자현미경 (SEM)사진이다;
[91] 도 4는실시예 2에서형성된 In2Se3-CuSe분말의 XRD(X-ray diffraction)
그래프이다;
[92] 도 5는실시예 3에서형성된 In2Se3-CuSe분말의전자현미경 (SEM)사진이다;
[93] 도 6은실시예 3에서형성된 In2SerCuSe분말의 XRD그래프이다;
[94] 도 7은실시예 4에서형성된 In0.7Ga0.3Sei.5-CuSe분말의전자현미경 (SEM) 사진이다;
[95] 도 8은실시예 4에서형성된 In0.7Gao.3Sei.5-CuSe분말의 XRD그래프이다;
[96] 도 9는실시예 5에서형성된 In2S3-CuS분말의전자현미경 (SEM)사진이다; [97] 도 10은실시예 6에서형성된 (In,Ga)2Se3-CuSe분말의전자현미경 (SEM) 사진이다;
[98] 도 11은실시예 6에서형성된 (In,Ga)2Se3-CuSe분말의 XRD그래프이다;
[99] 도 12는실시예 7에서형성된 In2Se3-CuSe분말의전자현미경 (SEM)사진이다;
[100] 도 13은실시예 7에서형성된 In2SerCuSe분말의 XRD그래프이다;
[101] 도 14는비교예 1에서형성된 CuInS 분말의전자현미경 (SEM)사진이다;
[102] 도 15는비교예 1에서형성된 CuInSe2분말의 XRD그래프이다;
[103] 도 16은실시예 8에서제조된박막의 SEM사진이다;
[104] 도 17은실시예 8에서제조된박막의 XRD그래프이다;
[105] 도 18은실시예 9에서제조된박막의 SEM사진이다;
[ 106] 도 19는실시예 9에서제조된박막의 XRD그래프이다;
[107] 도 20은실시예 10에서제조된박막의 SEM사진이다;
[108] 도 21은실시예 10에서제조된박막의 XRD그래프이다;
[109] 도 22는실시예 11에서제조된박막의 SEM사진이다;
[110] 도 23은실시예 11에서제조된박막의 XRD그래프이다;
[111] 도 24는비교예 2에서제조된박막의 SEM사진이다;
[112] - 도 25는비교예 2에서제조된박막의 XRD그래프이다;
[113] 도 26은실시예 15에서제조된박막태양전지의 IV특성그래프이다.
발명의실시를위한형태
[114] 이하，본발명의실시예를참조하여설명하지만，하기실시예는본발명을 예시하기위한것이며，본발명의범주가이돌만으로한정되는것은아니다.
[Π5]
[116] <실시예 1>
[117] In;Se CuSe입자의합성
[118] 질소분위기하에서 100 ml의증류수에 NaBH4 1.974 g을가하여녹인후 1.974 g의 Se분말을가하고 100 ml의증류수를더가하였다.무색투명한용액이 만들어진후 15분간더교반한후 50 ml증류수에 2.212 g의 InCl3를녹인용액올 가하였다.혼합용액을 10분간더교반한후 50 ml의증류수에 1.705 g의 CuCI2를 녹인용액을천천히가하였다.흔합용액을한시간더교반한후원심분리하여
99%의수득률로 CuInSe2.5조성의분말을얻었으며 ICP로분석한결과 Cu: In: Se=22.18: 22.56: 55.26 (mol%)의비를갖는것을확인하였다.이입자는 XRD 분석결과 CuSe결정상을보였으며비정질의 In2Se3와결정성이좋은 CuSe가 혼합된상태인것으로확인하였다.이를분석한 SEM-EDX결과및 XRD결과를 도 1및도 2에나타내었다.
[119]
[120] <실시예 2>
[121] In2Se,-CuSe입자의합성 [122] 질소분위기하에서 150 ml의증류수에 NaB¾ 1.90 g을가하여녹인후 60 ml의 증류수에 3.224 g의 H2Se03을녹인용액을점적하였다.무색투명한용액이 만들어진후 35 ml증류수에 2.212 g의 InCI3를녹인용액을가하여 5분간교반한 후 40 ml의증류수에 CuCl2*2H20 1.705 g을녹인용액을가하여얻어진혼합 용액을하루동안교반한후원심분리하여 99%의수득률로 QiInSe2.5조성의 분말을얻었으며 ICP로분석한결과 Cu: In: Se= 2.42: 22.20: 56.38 (mol%)의비를 갖는것을확인하였다.이입자는 XRD분석결과 CuSe결정상을보였으며 비정질의 1 3와결정성이좋은 CuSe가흔합된상태인것으로확인하였다. 이를분석한 SEM-EDX결과및 XRD결과를도 3및도 4에나타내었다.
[123]
[124] <실시예 3>
[125] In2Se3-CuSe입자의함성
[126] 질소분위기하에서 50 ml의증류수에 NaBH4 1.135 g을가하여녹인후 30ml의 증류수에 1.935 g의 H2Se03를녹인용액을가하였다.무색투명한용액이 만들어진후 50 ml증류수에 2.212 g의 ¾03를녹인용액을가하여 3.5시간더 교반하여 In2Se3입자를형성하였다.다른플라스크에서질소분위기하에서 50 ml의증류수에 0.757 g의 NaBH4를녹인용액을제조하고여기에 20 ml의 증류수에 1.290 g의 ¾ 03를녹인용액을가하여준후맑은상태가될때까지 교반하였다.이용액에앞서만든 In2Se3용액을가한후다시 50 ml의증류수에 1.705 g의 CuCl2*2H20를녹인용액을가하여준후하루동안교반하였다.얻어진 용액을원심분리하여정제한후진공건조하여 QiInSe2.5조성의입자를얻었다. 입자를 ICP로분석한결과는 Cu: In: Se= 21.80: 21.89: 56.31 (mol%)의조성을 가지는것을확인하였고，이입자는 XRD분석결과 CuSe결정상올보였으며 비정질의 In2Se3와결정성이좋은 CuSe가혼합된상태인것으로확인하였다. 이를분석한 SEM-EDX및 XRD결과를도 5및도 6에나타내었다.
[127]
[128] <실시예 4>
[129] InqiGa^Se^-CuSe입자의합성
[130] 질소분위기하에서 100 ml의증류수에 NaB¾ 2.270 g을가하여녹인후 60ml의 증류수에 3.869 g의 H2Se03를녹인용액을가하였다.무색투명한용액이 만들어진후 100 ml증류수에 3.097 g의 InCl3과 2.703 g의 0^3를녹인용액을 가하여하루동안더교반하여 I¾7Gao.3Se|.5입자를형성하였다.다른
플라스크에서질소분위기하에서 100 ml의증류수에 1.665 g의 NaBH4를녹인 용액을제조하고여기에 40 ml의증류수에 2.837 g의 H2Se03를녹인용액을 가하여준후맑은상태가될때까지교반하였다.이용액에앞서만든 In0.7Gao.3Se 1 5용액을가한후다시 100 ml의증류수에 3.410 g의 CuCl2*2H20를녹인용액을 가하여준후 5시간동안교반하였다.얻어진용액을원심분리하여정제한후 진공건조하여 QiIno.7Gao.3Se2.5조성의입자를얻었다.입자를 ICP로분석한 결과는 Cu: In: Ga: Se: Na: B= 20.07: 14.19: 5.88: 55.885: 3.73: 0.26 (mol%)의 조성을가지는것을확인하였고이입자는 XRD분석결과 CuSe결정상을 보였으며비정질의 (In,Ga)2Se3와결정성이좋은 CuSe가흔합된상태인것으로 확인하였다.이를분석한 SEM-EDX및 XRD결과를도 7및도 8에나타내었다.
[131]
[132] <실시예 5>
[133] InzSrCuS ¾자의합성
[134] 질소분위기하에서 Na2S*9H20 3.603 g을 60 ml의증류수에녹이고여기에 40 ml증류수에 2.212 g의 Ιηα3를녹인용액을 50 ml의증류수와함께가한후흔합 용액을한시간더교반하였다.여기에 2.402 g의 Na2S*9H20를 50 ml의증류수에 녹인용액을가하고 10분간교반한후 1.705 g의 Cua2*2¾0를 50 ml의증류수에 녹인용액을가하였다.반 액을 3시간더교반한후원심분리방법으로정제한 후진공건조하여 Cu: In을 2.64: 3.10의비율로포함하는입자를얻었다.이를 분석한 SEM-EDX결과를도 9에나타내었다.
[135]
[136] <실시예 6>
[137] an.Ga ,Se,-CuSe입자의합성
[138] 질소분위기하에서 50 ml의증류수에 NaBH4 1.135 g을가하여녹인후 30ml의 증류수에 1.935 g의 H2Se03를녹인용액을가하였다.무색투명한용액이 만들어진후 50 ml증류수에 1.548 g의 InCl3과 1.351 g의 Gal3를녹인용액을 가하여하루동안더교반하여 In^GifeSe 입자를형성하였다.다른
풀라스크에서질소분위기하에서 50 ml의증류수에 a666 g의 NaBH4를녹인 용액을제조하고여기에 20 ml의증류수에 1.135 g의 H2Se03를녹인용액을 가하여준후맑은상태가될때까지교반하였다.이용액에앞서만든 (In,Ga)2Se3 용액을가한후다시 50 ml의증류수에 1.364 g의 Q a2*2¾0를녹인용액을 가하여준후 6시간동안교반하였다.얻어진용액을원심분리하여정제한후 진공건조하여 CUo.8Jno.74Gao.26Se 5조성의입자를얻었다.입자를 ICP로분석한 결과는 Cu: In: Ga: Se: Na: B= 17.62: 16.18: 5.61: 56.22: 4.16: 0.22 (mol%)의조성을 가지는것을확인하였고이입자는 XRD분석결과 CuSe결정상을보였으며 비정질의 (¾，0^2 3와결정성이좋은 CuSe가흔합된상태인것으로확인하였다. 이를분석한 SEM-EDX및 XRD결과를도 10및도 11에나타내었다.
[139]
[140] <실시예 7>
[141] In^rCuSe ^자함성
[142] 질소분위기하에서 50 ml의증류수에 NaBH4 1.248 g을가하여녹인후 30ml의 증류수에 2.128 g의 H2Se03를녹인용액을가하였다.무색투명한용액이 만들어진후 50 ml증류수에 2.212 g의 InCl3를녹인용액을가하여하루동안더 교반하여 In2Se3입자를형성하였다.다른플라스크에서질소분위기하에서 50 ml의증류수에 0.832 g의 NaBH4를녹인용액을제조하고여기에 20 ml의 증류수에 1.419 g의 H2Se03를녹인용액을가하여준후맑은상태가될때까지 교반하였다.이용액에앞서만든 In2Se3용액을가한후다시 50 ml의증류수에
1.705 g의 CuCl2*2H20를녹인용액과 20 ml의증류수에 0.111 g의
폴리비닐피로리돈 (Polyvinylpyrrolidone)을녹인용액을가하여준후 5시간동안 교반하였다.얻어진용액을원심분리하여정제한후진공건조하여 CuInSe25 조성의입자를얻었다.입자를 ICP로분석한결과는 Cu: In: Se: Na: B= 19.49:
19.97: 48.81: 3.75: 7.98 (mol%)의조성을가지는것을확인하였고이입자는 XRD 분석결과 CuSe결정상을보였으며비정질의 In2Se3와결정성이좋은 CuSe가 혼합된상태인것으로확인하였다.이를분석한 SEM-EDX및 XRD결과를도 12 및도 13에나타내었다.
[143]
[144] <비교예 1>
[145] CuCl 8 mmol, InCl3 10 mmol,및 Se분말 20 mmol을올레일아민 100 ml에
가하고，진공감압하에 80°C로가열하면서 4시간교반한후질소분위기에서 240oC로온도를올려동일온도에서 4시간반웅후냉각하였다.이를핵산과 에탄올을이용하여원심분리법으로정제하여 CuInSe2조성을가지는나노 입자를얻었고,이를분석한 SEM-EDX및 XRD결과를도 14및도 15에 나타내었다.
[146]
[147] <실시예 8〉
[148] 박막의제조
[149] 실시예 4에서제조된 CUIn0.7Gao.3Se2.5의조성의입자를에탄올，에틸렌글리콜 모노메틸이써,아세틸아세톤,프로필렌글리콜프로일이써,사이클로핵사논， 에탄올아민, 1,2-프로판디올，디에틸렌글리콜모노에틸이써，글리세를,소듐 도데실설페이트로이루어진혼합용매에가한후 21%농도로분산하여잉크를 제조하였다.얻어진잉크를 glass위에코팅된 Mo박막위에코팅한후 200도까지 건조하였다.이를 Se의존재하에서 550도에서열처리하여 CIGS박막을얻었다. 얻어진박막을분석한 SEM-EDX및 XRD결과를도 16과도 17에나타내었다.
[150]
[151] <실시예 9>
[152] 박막의체조
[153] 실시예 4에서제조된 CuIn0.7Ga0.3Se25의조성의입자 24%와 CuSe입자를 1.2%의 비율로혼합하여에틸렌글리콜모노메틸이써,프로필렌글리콜프로일이써, 에탄을아민， 1，2-프로판디을，디에틸렌글리콜모노에틸이써로이루어진흔합 용매에가한후분산하여잉크를제조하였다.얻어진잉크를 glass위에코팅된 Mo박막위에코팅한후 200도까지건조하였다.이를 Se의존재하에서
550도에서열처리하여 CIGS박막을얻었다.얻어진박막을분석한 SEM-EDX및 XRD결과를도 18과도 19에나타내었다.
[154]
[155] <실시예 10>
[156] 박막의체조
[157] 실시예 6에서제조된 Cu-poor한조성의 CUo.8Ino.7G0.3Se2.5의조성을가진입자와 Cu0.87Se나노입자를혼합하여에틸렌글리콜모노메틸이써，프로필렌글리콜 프로일이써,에탄올아민， 1,2-프로판디올,디에틸렌글리콜모노에틸이써로 이루어진흔합용매에가한후분산하여잉크를제조하였다.얻어진잉크를 glass위에코팅된 Mo박막위에코팅한후 200도까지건조하였다.이를 Se의 존재하에서 550도에서열처리하여 CIGS박막을얻었다.얻어진박막을분석한 SEM-EDX및 XRD결과를도 20과도 21에나타내었다.
[158]
[159] <실시예 11〉
[160] 박막의제조
[161] 실시예 7에서제조된 CuInSe2^조성의입자를에탄올,에틸렌글리콜
모노메틸이써，으로아세틸아세톤，프로필렌글리콜프로일이써，
사이클로핵사논으로이루어진흔합용매에가한후 20%농도로분산하여 잉크를제조하였다.얻어진잉크를 glass위에코팅된 Mo박막위에코팅한후 160도까지건조한후 300 bar의압력으로 press하였다.이를 Se의존재하에서 550도에서열처리하여 CIS박막을얻었다.얻어진박막을분석한 SEM-EDX및 XRD결과를도 22과도 23에나타내었다.
[162]
[163] <비교예 2>
[164] 박막의제조
[165] 비교예 1에서제조된 CuInSe2의조성의입자를에탄올,에틸렌글리콜
모노메틸이써，아세틸아세톤,프로필렌글리콜프로일이써，
사이클로핵사논으로이루어진흔합용매에가한후 20%농도로분산하여 잉크를제조하였다.얻어진잉크를 glass위에코팅된 Mo박막위에코팅한후 160도까지건조한후 300 bar의압력으로 press하였다.이를 Se의존재하에서 550도에서열처리하여 CIS박막을얻었다.얻어진박막을분석한 SEM-EDX및 XRD결과를도 24과도 25에나타내었다.도 24에서보는바와같이 CuInSe2 입자로부터얻은박막은매우공극 (void)이많고입자성장이저조한것을확인할 수있었다.
[166]
[167] <실시예 12>
[168] 박막태양저지의체조
[169] 실시예 8에서제조된 CIGS박막위에 CBD방법으로 CdS버퍼층을제조하고 스퍼터방법으로 ZnO와 Al:ZnO를차례로증착한후 e-beam으로 A1전극을 올려서 cell올제조하였다.이 cell은 Jsc=24.86 mA/sqcm, Voc = 0.23 V, FF = 36.55%, Eff= 2.09 %의 cell특성을보였다.
[170]
[171] <실시예 13>
[172] 박막태양저지의제조
[173] 실시예 9에서제조된 CIGS박막위에 CBD방법으로 CdS버퍼층을제조하고 스퍼터방법으로 ZnO와 Al:ZnO를차례로증착한후 e-beam으로 A1전극을 을려서 cell을제조하였다.이 cell은 Jsc=29.33 mA/sqcm, Voc =0.42 V, FF = 42.0%, Eff= 5.20 %의 cell특성을보였다.
[174]
[175] <실시예 14>
[176] 박막태양 ^지의체조
[177] 실시예 9에서제조된 CIGS박막위에 CBD방법으로 CdS버퍼층을제조하고 스퍼터방법으로 ZnO와 Al:ZnO를차례로증착한후스크린프린팅법으로 Ag 전극을올려서 cell을제조하였다.이 cell은 Jsc=34.07 mA/sqcm, Voc = 0.30 V， FF = 34.28%, Eff= 3.48 %의 cell특성을보였다.
[178]
[179] <실시예 15>
[180] 박막태양저지의제조
[181] 실시예 10에서제조된 CIGS박막위에 CBD방법으로 CdS버퍼층을제조하고 ' 스퍼터방법으로 ZnO와 Al:ZnO를차례로증착한후 e-beam법으로 A1전극을 을려서 cell을제조하였다.이 cell은 Jsc=26.87 mA/sqcm, Voc = 0.43 V, FF = 49.01%, Eff= 5.61 %의 cell특성을보였다.상기박막태양전지로부터얻어진
전류 -전압 (I-V)특성그래프를도 26에나타내었다.
[182]
[183] <실시예 16>
[184] 박막태양저지의제조
[185] 실시예 11에서제조된 CIS박막위에 CBD방법으로 CdS버퍼층을제조하고 스퍼터방법으로 ZnO와 Al:ZnO를차례로증착한후 e-beam으로 A1전극을 올려서 cell을제조하였다.이 cell은 Jsc=28.37 mA/sqcm, Voc = 0.23 V, FF = 34.08%, Eff= 2.19 %의 cell특성을보였다.
[186]
[187] <비교예 3>
[188] 박막태양저지의제조
[189] 비교예 2에서제조된 CIS박막에 CBD방법으로 CdS버퍼층을제조하고
스퍼터방법으로 ZnO와 Al:ZnO를차례로증착한후 e-beam으로 AI전극을 올려서 cell을제조하였다.이 cell은 Jsc=13.45 mA/sqcm, Voc = 0.18 V, FF = 26.63%, Eff= 0.6 %의 cell특성을보였다. [190]
[191] <실험예 1>
[192] 실시예 1내지 7및비교예 1의입자의조성을분석하여하기표 1에
정리하였다.이들을기반으로한실시예 12내지 16，및비교예 3에서제조된 박막태양전지의광전효율을측정하였고，그결과를하기표 2에나타내었다.
[193]
[194] 표 1
[Table 1]
Figure imgf000017_0001
[195] 표 2
[Table 2]
Figure imgf000018_0001
[196] 상기표 2에기재된태양전지의효율을결정하는변수인 Jsc는전류밀도를
의미하고， Voc는제로출력전류에서측정된개방회로전압을의미하며， 광전효율은태양전지판에입사된빛의에너지량에따른전지출력의비율을 의미하고， FF(Fill factor)는최대전력점에서의전류밀도와전압값의곱을 Voc와 Js, 의곱으로나눈값을의미한다.
[197] 표 2및도 26을참조하면,본발명에따른웅집상전구체를사용하여 CI(G)S 박막을제조하는경우，기존의 CuInS(Se)2의단일상입자를사용하여 CI(G)S 박막을제조하는경우에비해，전류밀도,개방회로전압，및광전효율이모두 향상된값을가짐을알수있다.특히，전류밀도와광전효율은매우우수한값을 나타낸다.
[198]
[199] 본발명이속한분야에서통상의지식을가진자라면상기내용을바탕으로본 발명의범주내에서다양한웅용및변형을행하는것이가능할것이다.
산업상이용가능성
[200] 이상에서설명한바와같이，본발명에따른구리 (Cu)함유칼코게나이드로
이루어진제 1상 (phase)과，인듬 (In)및 /또는갈륨 (Ga)함유칼코게나이드로 이루어진제 2상 (phase)을포함하는응집상전구체는하나의반응기내에서 연속적인공정을통해쩨조되는바,이를사용하여박막을제조하는경우，박막 전체적으로보다균일한조성을가질뿐아니라,산화에안정하고，전구체 자체에 S또는 Se를포함함으로써최종박막내에 VI족원소의함유량을높여 양질의박막을제조할수있는효과가있다.

Claims

청구범위
[청구항 1] 태양전지의광흡수층제조용응집상전구체 (aggregate phase
precursor)로서,구리 (Cu)함유칼코게나이드로이루어진제 1 상 (phase)과,인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드로 이루어진제 2상 (phase)을포함하고，상기웅집상전구체는 광흡수층제조용잉크용매에서전구체전체중량을기준으로 30%이상이제 1상및 /또는제 2상을포함하는입자웅집체들 또는제 1상또는제 2상을갖는독립적입자들로분리되는것을 특징으로하는광흡수층제조용웅집상전구체.
[청구항 2] 제 1항에있어서，상기응집상전구체의입경은 10나노미터내지
500나노미터인것을특징으로하는광흡수층제조용웅집상 전구체.
[청구항 3] 제 1항에있어서，상기입자웅집체들의입경은 2나노미터내지
200나노미터인것을특징으로하는광흡수층제조용웅집상 전구체.
[청구항 4] 제 1항에있어서，상기독립적입자의입경은 1나노미터내지 100 나노미터인것을특징으로하는광흡수층제조용웅집상전구체. [청구항 5] 제 1항에있어서，구리 (Cu)함유칼코게나이드는 CuyS (0.5<y<2.0) 및 QiySe (0.5≤y≤2.0)로이루어진군으로부터선택되는하나 이상인것을특징으로하는광흡수층제조용응집상전구체.
[청구항 6] 제 1항에있어서，인듬 (In)및 /또는갈륨 (Ga)함유칼코게나이드는
(Inx(Ga)1-x)mSen (0<x< 1 , 0.5<n/m<2.5),및 (In^Ga^S ^x^, 0.5≤n/m≤2.5)로이루어진군으로부터선택되는하나이상인것올 특징으로하는광흡수층제조용웅집상전구체.
[청구항 7] 제 1항에있어서，상기응집상전구체에존재하는칼코게나이드 원소의성분비는구리 (Cu)와인듐 (In),및갈륨 (Ga)을합한 1몰에 대해 0.5내지 3몰인것을특징으로하는광흡수층제조용응집상 전구체.
[청구항 8] 제 1항에있어서，상기웅집상전구체에존재하는구리 (Cu)의
성분비는 In+Ga의성분 1몰에대해 0.7내지 1.2몰인것을 특징으로하는광흡수층제조용응집상전구체.
[청구항 9] 제 1항에따른광흡수층제조용응집상전구체를제조하는
방법으로서,
(i)환원제를포함하는제 1용액을준비하는과정 ;
(ii)황 (S)및 /또는셀레늄 (Se)화합물을포함하는제 2용액， 인듐 (In)염또는인듐 (In)염과갈륨 (Ga)염을포함하는제 3용액，및 구리 (Cu)염을포함하는제 4용액을준비하는과정; (iii)상기제 1용액과제 2용액을혼합하여혼합액을제조하는 과정;
(iv)상기과정 (iii)의혼합액에제 3용액을흔합하고반웅시켜 인듬 (In)및 /또는갈륨 (Ga)함유칼코게나이드입자를합성하는 과정 ;및
(V)상기과정 (iv)의인듬 (In)및 /또는갈륨 (Ga)함유칼코게나이드 입자를포함하는용액에상기제 4용액을흔합하여구리 (Cu)함유 칼코게나이드로이루어진제 1상 (phase)과，인듐 (In)및 /또는 갈륨 (Ga)함유칼코게나이드로이루어진제 2상 (phase)을모두 포함하는광흡수층제조용웅집상전구체를합성하는과정; 을포함하는것을특징으로하는광흡수충제조용웅집상 전구체의제조방법.
제 9항에있어서，상기과정 (V)의인듐 (In)및 /또는갈륨 (Ga)함유 칼코게나이드입자를포함하는용액에제 4용액을흔합시추가로 첨가제를첨가하는것을특징으로하는광흡수층제조용웅집상 전구체의제조방법.
제 9항에있어서，상기과정 (V)이전에과정 (i)내지과정 (iii)과 별도로환원제를포함하는제 5용액，및황 (S)및 /또는셀레늄 (Se) 화합물을포함하는제 6용액을흔합하여흔합액을제조하고，이를 과정 (V)의인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드입자를 포함하는용액및제 4용액과함께혼합하는것을특징으로하는 광흡수층제조용응집상전구체의제조방법.
제 11항에있어서,상기제 5용액과제 6용액의흔합액，인듬 (In) 및 /또는갈륨 (Ga)함유칼코게나이드입자를포함하는용액,및제 4용액을흔합시추가로첨가제를첨가하는것을특징으로하는 광흡수층제조용응집상전구체의제조방법.
제 9항또는제 11항에있어서，상기환원제는유기환원제 및 /또는무기환원제인것을특징으로하는광흡수층제조용 응집상전구체의제조방법.
제 13항에있어서，상기환원제는 LiBH4, NaBH4> KBH4, Ca(BH4)2, Mg(BH4)2, LiB(Et)3H2, NaBH3(CN), NaBH(OAc)3,하이드라진, 아스코르브산 (ascorbic acid)및
트리에탄을아민 (triethanolamine)으로이루어진군에서선택되는 하나인것올특징으로하는광흡수층제조용웅집상전구체의 제조방법.
제 1항에따른광흡수층제조용응집상전구체를제조하는 방법으로서,
(i)황 (S)및 /또는셀레늄 (Se)화합물을포함하는제 1용액, 인듬 (In)염또는인듐 (In)염및갈륨 (Ga)염을포함하는제 2용액， 및구리 (Cu)염을포함하는제 3용액을준비하는과정 ;
(ii)상기제 1용액과제 2용액을혼합하고반응시켜인듐 (In) 및 /또는갈륨 (Ga)함유칼코게나이드입자를합성하는과정 ;
(iii)상기과정 (H)의인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드 입자를포함하는용액에상기제 3용액을혼합하여구리 (Cu)함유 칼코게나이드로이루어진제 1상 (phase)과，인듬 (In)및 /또는 갈륨 (Ga)함유칼코게나이드로이루어진제 2상 (phase)을모두 포함하는광흡수층제조용웅집상전구체를합성하고정제하는 과정;
을포함하는것을특징으로하는광흡수층제조용응집상 전구체의제조방법.
제 15항에있어서，상기과정 (iii)의인듐 (In)및 /또는갈륨 (Ga)함유 칼코게나이드입자를포함하는용액에제 3용액을흔합시추가로 첨가제를첨가하는것을특징으로하는광흡수층제조용응집상 전구체의제조방법.
제 15항에있어서，상기과정 (iii)의인듬 (In)및 /또는갈륨 (Ga)함유 칼코게나이드입자를포함하는용액에제 3용액을혼합시상기 과정 G)의제 1용액과는별도로황 (S)및 /또는샐레늄 (Se)화합물을 포함하는제 4용액을함께혼합하는것을특징으로하는광흡수층 제조용웅집상전구체의제조방법.
제 17항에있어서,상기인듐 (In)및 /또는갈륨 (Ga)함유 칼코게나이드입자를포함하는용액，제 3용액,및제 4용액올 흔합시추가로첨가제를첨가하는것을특징으로하는광흡수층 제조용웅집상전구체의제조방법.
제 9항，제 11항，제 15항,및제 17항증어느한항에있어서，상기 황 (S)화합물은 S분말， H2S, Na2S, K2S, CaS, (CH3)2S, H2S04,및 이들의수화물과티오요소 (thiourea),및
티오아세트아미드 (thioacetamide)으로이루어진군에서선택되는 하나이상인것을특징으로하는광흡수층제조용웅집상 전구체의제조방법.
제 9항,제 U항,제 15항,및제 17항증어느한항에있어서，상기 셀레늄 (Se)화합물은 Se분말， H2Se, Na2Se, 2Se, CaSe, (CH3)2Se,
Se02, SeCl4, H2Se03) H2Se04,및이들의수화물과
셀레노유레아 (selenourea),및셀레노우스산 (selenous acid)으로 이루어진군에서선택되는하나이상인것을특징으로하는 광흡수층제조용응집상전구체의제조방법.
제 9항，제 11항，제 15항,및제 17항증어느한항에있어서, 상기제 1용액내지제 6용액의용매는물，알코을류，아세트산, 디에틸렌글리콜 (DEG; diethylene glycol),오레일아민 (oleylamine), 에틸렌글리콜 (ethyleneglycol),트리에틸렌글리콜 (triethylene glycol),디메틸설폭사이드 (dimethyl sulfoxide),
디메틸포름아마이드 (dimethyl formamide)및
NMP(N-methyl-2-pyrrolidone)로이루어진군에서선택되는하나 이상인것을특징으로하는광흡수층제조용응집상전구체의 제조방법.
[청구항 22] 제 9항또는제 15항에있어서，상기염은염화물 (chloride),
브롬화물 (bromide),요오드화물 (iodide),질산염 (nitrate), 아질산염 (nitrite),황산염 (sulfate),아세트산염 (acetate),
아황산염 (sulfite),아세틸아세토네이트염 (acetylacetoante)및 수산화물 (hydroxide)로이루어진군에서선택되는하나이상의 형태인것을특징으로하는광흡수층제조용응집상전구체의 제조방법.
[청구항 23] 제 10항，제 12항，제 16항，및제 18항증어느한항에있어서， 상기첨가제는폴리비닐피로리돈 (Polyvinylpyrrolidone: PVP), 폴리비닐알코올 (Polyvinylalcohol),및에틸셀를로오스 (ethyl cellulose)로이루어진군에서선택되는어느하나이상인것을 특징으로하는광흡수층제조용응집상전구체의제조방법.
[청구항 24] 제 1항에따른광흡수층제조용웅집상전구체가용매에분산되어 구리 (Cu)함유칼코게나이드로이루어진제 1상 (phase)및 /또는 인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드로이루어진제 2 상 (phase)을포함하는입자웅집체들또는제 1상또는제 2상올 갖는독립적입자들로존재하는것을특징으로하는잉크조성물.
[청구항 25] 제 24항에따른잉크조성물을사용하여박막을제조하는
방법으로서，
(i)구리 (Cu)함유칼코게나이드로이투어진제 1상 (phase)과， 인듐 (In)및 /또는갈륨 (Ga)함유칼코게나이드로이루어진제 2 상 (phase)을포함하는광흡수층제조용웅집상전구체를용매에 분산하여잉크를제조하는과정;
(ii)전극이형성된기재상에상기잉크를코팅하는과정;및
(iii)상기전극이형성된기재상에코팅된잉크를건조한후 열처리하는과정;
을포함하는것을특징으로하는박막의제조방법 .
[청구항 26] 제 25항에있어서,상기과정 (i)의용매는알칸계 (alkanes),
알켄계 (alkenes),알킨계 (alkynes),방향족화합물계 (aromatics), 케톤계 (ketons),니트릴계 (nitriles),에테르계 (ethers), 에스테르계 (esters),유기할로겐화물계 (organic halides),
알코올계 (alcohols),아민계 (amines)，티올계 (thiols),카르복실 산계 (carboxylic acids),수소화인계 (phosphines),
인산염계 (phosphates),황산화물계 (sulfoxides),및아미드계 (amides) 이루어진군으로부터선택된하나이상의유기용매인것을 특징으로하는박막의제조방법 .
[청구항 27] 제 25항에있어서,상기과정 (i)의잉크는첨가제를더포함하여 제조되는것을특징으로하는박막의제조방법 .
[청구항 28] 제 27항에있어서,상기첨가제는
폴리비닐피로리돈 (Polyvinylpyrrolidone: PVP), 폴리비닐알코을 (Poly vinylalcohol),안티테라 204( Anti-terra 204), 안티테라 205(Anti-terra 205),에틸샐를로오스 (ethyl cellulose),및 디스퍼스 BYKUO(DispersBYKl lO)으로이루어진군에서선택되는 어느하나이상인것을특징으로하는박막의제조방법 .
[청구항 29] 제 25항에있어서,상기과정 (iii)의열처리는 400내지 900도
범위의온도에서수행되는것올특징으로하는박막의제조방법.
[청구항 30] 제 25항내지제 29항증어느하나에따른방법으로제조된것을 특징으로하는박막.
[청구항 31] 제 30항에따른박막을사용하여제조되는박막태양전지 .
PCT/KR2014/007092 2013-08-01 2014-08-01 태양전지 광흡수층 제조용 응집상 전구체 및 이의 제조방법 WO2015016651A1 (ko)

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101952740B1 (ko) * 2015-06-03 2019-02-27 주식회사 엘지화학 태양전지 광흡수층 제조용 전구체 및 이의 제조방법
KR102613046B1 (ko) * 2015-10-06 2023-12-12 삼성전자주식회사 금속 칼코게나이드 나노입자 및 그 제조방법
CN111489958B (zh) * 2020-04-21 2023-08-11 哈尔滨理工大学 一种低温油墨法制备的铜铟镓硒吸收层

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090305449A1 (en) * 2007-12-06 2009-12-10 Brent Bollman Methods and Devices For Processing A Precursor Layer In a Group VIA Environment
US20100227066A1 (en) * 2009-03-04 2010-09-09 Jun-Wen Chung Multi-element metal chalcogenide and method for preparing the same
US20120100660A1 (en) * 2010-10-25 2012-04-26 Hagedorn Kevin V Method for preparation of metal chalcogenide solar cells on complexly shaped surfaces
WO2012112821A1 (en) * 2011-02-16 2012-08-23 Sandia Solar Technologies Llc Solar absorbing films with enhanced electron mobility and methods of their preparation
US8329501B1 (en) * 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US20070163639A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from microflake particles
US20070163640A1 (en) * 2004-02-19 2007-07-19 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer by use of chalcogen-rich chalcogenides
KR100850000B1 (ko) * 2005-09-06 2008-08-01 주식회사 엘지화학 태양전지 흡수층의 제조방법
US8071419B2 (en) * 2006-06-12 2011-12-06 Nanosolar, Inc. Thin-film devices formed from solid particles
US7670584B2 (en) * 2007-06-01 2010-03-02 International Business Machines Corporation Inorganic metal chalcogen cluster precursors and methods for forming colloidal metal chalcogenide nanoparticles using the same
KR101144807B1 (ko) * 2007-09-18 2012-05-11 엘지전자 주식회사 태양전지 박막조성용 잉크와 그 제조방법, 이를 이용한ｃｉｇｓ 박막형 태양전지, 및 그 제조 방법
CN101471394A (zh) * 2007-12-29 2009-07-01 中国科学院上海硅酸盐研究所 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
DE102009015470A1 (de) * 2008-12-12 2010-06-17 Byk-Chemie Gmbh Verfahren zur Herstellung von Metallnanopartikeln und auf diese Weise erhaltene Metallnanopartikel und ihre Verwendung
US9190543B2 (en) * 2009-06-04 2015-11-17 The Regents Of The University Of California Solution-processed inorganic photo-voltaic devices and methods of production
WO2011028957A2 (en) * 2009-09-02 2011-03-10 Brent Bollman Methods and devices for processing a precursor layer in a group via environment
US8440498B2 (en) * 2009-10-28 2013-05-14 Nanosolar, Inc. Thin-film devices formed from solid particles
TWI429593B (zh) * 2009-10-29 2014-03-11 Bosin Technology Co Ltd 太陽能電池吸收層之前驅物及其形成方法
KR101749137B1 (ko) * 2010-06-22 2017-06-21 영남대학교 산학협력단 태양광 전지용 나노결정질 구리 인듐 디셀레니드 (cis) 및 잉크-기반 합금 흡수재층
WO2012090339A1 (ja) * 2010-12-28 2012-07-05 東北精機工業株式会社 カルコパイライト構造を有する化合物の製造方法
KR101197228B1 (ko) 2010-12-29 2012-11-02 재단법인대구경북과학기술원 화합물 반도체 태양전지의 광흡수층 제조방법
KR101179010B1 (ko) * 2011-02-01 2012-08-31 연세대학교 산학협력단 칼코겐화물 반도체 박막 및 그 제조방법
KR101194375B1 (ko) 2011-04-25 2012-10-25 한국과학기술원 구형의 Ｃｕ２ＩｎＧａＳｅ２응집체를 포함하는 광흡수 층 및 이를 이용한 태양전지, 및 그 제조방법
JP2013021043A (ja) * 2011-07-08 2013-01-31 Hitachi Ltd 化合物半導体太陽電池材料およびそれを用いた太陽電池

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8329501B1 (en) * 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US20090305449A1 (en) * 2007-12-06 2009-12-10 Brent Bollman Methods and Devices For Processing A Precursor Layer In a Group VIA Environment
US20100227066A1 (en) * 2009-03-04 2010-09-09 Jun-Wen Chung Multi-element metal chalcogenide and method for preparing the same
US20120100660A1 (en) * 2010-10-25 2012-04-26 Hagedorn Kevin V Method for preparation of metal chalcogenide solar cells on complexly shaped surfaces
WO2012112821A1 (en) * 2011-02-16 2012-08-23 Sandia Solar Technologies Llc Solar absorbing films with enhanced electron mobility and methods of their preparation

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