WO2013023493A1 - Ito through hole capacitive touch screen and manufacturing method therefor - Google Patents

Ito through hole capacitive touch screen and manufacturing method therefor Download PDF

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Publication number
WO2013023493A1
WO2013023493A1 PCT/CN2012/077366 CN2012077366W WO2013023493A1 WO 2013023493 A1 WO2013023493 A1 WO 2013023493A1 CN 2012077366 W CN2012077366 W CN 2012077366W WO 2013023493 A1 WO2013023493 A1 WO 2013023493A1
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WO
WIPO (PCT)
Prior art keywords
ito
electrode
thickness
angstroms
hole
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Application number
PCT/CN2012/077366
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French (fr)
Chinese (zh)
Inventor
曹晓星
李晗
Original Assignee
深圳市宝明科技股份有限公司
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Publication of WO2013023493A1 publication Critical patent/WO2013023493A1/en

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

Definitions

  • the present invention relates to the field of capacitive touch screen technologies, and in particular, to a capacitive touch screen designed through a ⁇ 0 through hole and a method of fabricating the same. Background technique
  • touch screens With the development of electronic technology, keyboards or mice for mobile phones, digital cameras, handheld game consoles, car DVDs, MP3s, instrumentation, etc. are gradually being replaced by touch screens.
  • the products of touch screens were not very hot a few years ago, and with the increasing contact with touch screen products, they have been recognized by more people in the past two years, and the speed of development has gradually accelerated.
  • the rapid growth of the touch screen has not only stimulated more intense industry competition, but also indirectly promoted the development of technology. Its multi-touch operation method has increased the influence of touch screen products to a new height, and has gradually been adopted by people. Concerned.
  • the touch screen is mainly composed of a touch detecting component and a touch screen controller.
  • the touch detecting component is installed in front of the display screen for detecting the touch position of the user, and is sent to the touch screen controller after receiving; and the main function of the touch screen controller is to receive from the touch point detecting device. Touch the information, convert it to the contact coordinates, and send it to the CPU. It can also receive commands from the CPU and execute them.
  • the touch screen can be divided into four types: resistive type, capacitive sensing type, infrared type and surface acoustic wave type.
  • resistive type capacitive sensing type
  • infrared type infrared type
  • surface acoustic wave type Currently, a resistive touch screen is widely used, which uses pressure sensing. Resistively controlled; Resistive touch screen is a multi-layer composite film, the main part of which is a resistive film screen that fits perfectly with the display surface.
  • the resistive film screen is a layer of glass or hard plastic plate as a base layer coated with a transparent oxidized metal (transparent conductive resistor) ITO (Indium Tin Oxide) conductive layer, which is covered with an outer surface hardened smooth anti-scratch
  • ITO Indium Tin Oxide
  • the plastic layer, its inner surface is also coated with an ITO coating, there are many small between them (less than 1 / 1000)
  • the transparent isolation point of the inch separates the two conductive layers from each other.
  • the controller detects this contact and calculates the position of (X, Y), and then operates according to the way of simulating the mouse.
  • the basic principle of the capacitive touch screen is to use the current sensing of the human body.
  • the capacitive touch screen is a two-layer composite glass screen, and the inner surface of the glass screen is coated with ⁇ .
  • the outermost layer is a thin layer of bauxite glass protective layer, ITO coating as the working surface, four electrodes are led out at the four corners, when the finger touches the screen, Due to the human body electric field, the user and the touch screen surface form a coupling capacitor.
  • the capacitor is a direct conductor, so the finger sucks a small current from the contact point, and this current flows out from the electrodes on the four corners of the touch screen. And the current flowing through the four electrodes is proportional to the distance from the finger to the four corners.
  • the controller calculates the position of the touch point by accurately calculating the ratio of the four currents.
  • the projected capacitive touch screen is a widely used one, which has the characteristics of simple structure and high light transmittance.
  • the touch sensing component of the projected capacitive touch screen generally has a plurality of row electrodes and column electrodes staggered to form an inductive matrix.
  • the commonly used design method includes disposing the row electrode and the column electrode on both sides of the same transparent substrate to prevent short circuit at the staggered position; or disposing the row electrode and the column electrode on the same side of the same transparent substrate to form the same conductive film ( Generally, it is an ITO conductive film), and the row electrode and the column electrode are separated by an insulating layer and a conductive bridge is disposed at a position where the row electrode and the column electrode are staggered, and the row electrode and the column electrode are separated to ensure conduction in respective directions, which is effective. Prevent it from shorting in the staggered position.
  • a commonly adopted design is: one of the row electrodes or the column electrodes is continuously disposed on the conductive film, and the other electrode is disposed on the conductive film at intervals of electrodes arranged in a plurality of electrode blocks, and the conductive bridge is disposed at the position of the staggered point.
  • the adjacent electrode blocks are electrically connected to form a continuous electrode in the other direction; the conductive bridge is separated from the continuously disposed electrodes by an insulating layer, thereby effectively preventing the row electrode and the column electrode from being short-circuited at the staggered point.
  • the plan is: (1) the laminated structure is a transparent substrate, a first direction electrode, an insulating layer, and a conductive bridge; or (2) the laminated structure is a transparent substrate, a conductive bridge, an insulating layer, and a first direction electrode.
  • the capacitive touch screen adopting the traditional design scheme may have the defects of low light transmittance and poor working stability.
  • the transmittance of the capacitive touch screen of the conventional design scheme is difficult to break through 80%, and the whole force is bent and deformed easily. Separation occurs at the interface, causing the electrode to open the touch to fail and the touch sensing component to be damaged.
  • One of the objectives of the present invention is to provide a ⁇ through-hole capacitive touch screen.
  • the ITO signal electrode is electrically connected up and down by means of an ITO through hole, thereby effectively increasing the capacitance.
  • the present invention adopts the following technical solutions:
  • An ITO through-hole capacitive touch screen including
  • the invention comprises a decorative glass substrate (cover glass), a capacitor functional substrate laminated on the decorative glass substrate by optical glue, and an ITO electrode, a first insulating layer, an ITO via electrode, a metal electrode and a second layer which are sequentially laminated on the capacitor functional substrate.
  • the ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed .
  • the capacitive functional substrate has a thickness of 0.33 to 0.7 mm of a chemically strengthened glass substrate;
  • the decorative glass substrate has a thickness of 0.5 to 2.0 mm of a chemically strengthened glass substrate;
  • the capacitive functional substrate is made of borosilicate or sodium calcium.
  • the number of the through holes of the through hole electrode may be one or several, and the through hole electrode has a circular hole, an elliptical hole, a triangular hole, a trapezoidal hole, or a rectangular hole;
  • the ITO electrode layer has a thickness of 50 to 2000 angstroms (face resistance is 10 to 430 ohms);
  • the thickness of the first insulating layer is 0.5 ⁇ 3um ;
  • the thickness of the IT0 via electrode is 50 angstroms to 2000 angstroms (the surface resistance is 10 ⁇ 430 ohms);
  • the thickness of the metal electrode layer is 500 ⁇ 4000 angstroms;
  • the thickness of the second insulating layer is 0.5 ⁇ 3um.
  • the metal film layer of the metal coating is a sandwich structure formed by stacking MoNb, AlNd and MoNb, and the thickness is in the range of 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms.
  • the mass ratio of Mo and Nb in the MoNb alloy material is 85-95: 5-15, and the mass ratio of A1 and Nd in the AlNd alloy material is 95 ⁇ 98: 2-5
  • the first insulating layer makes the ITO electrode and the ITO through hole
  • the electrodes are in an insulated condition and do not conduct each other.
  • the ITO via electrode acts as an ITO turn-on, turns on the capacitive screen drive or senses the line electrode, and has a regular pattern structure.
  • the flexible circuit board bonding area where the electrode signal is turned on is realized by the metal electrode.
  • the second insulating layer protects the metal electrode from the ITO wire to insulate it from the air.
  • a second object of the present invention is to provide a method for manufacturing a ⁇ through-hole capacitive touch screen, which adopts the following technical solutions:
  • the capacitive functional substrate is chemically strengthened, and then ITO coated to form a transparent and uniform thickness ITO film layer on the capacitive functional substrate, the thickness of which is 50 angstroms to 2000 angstroms (the surface resistance is 10 to 430 ohms);
  • the ITO coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum ⁇ 5um;
  • the photoresist is pre-baked, exposed, developed, etched, and stripped to a final thickness of 50-2000 angstroms (face resistance of 10 to 430 ohms) and regular ITO patterns or electrodes.
  • the ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.
  • the transparent substrate after passing through the ITO bridge electrode is coated with a thickness on the surface of the ITO film.
  • Uniform negative photoresist material, photoresist coating thickness is 0.5um ⁇ 3um;
  • the photoresist is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 to 3 um and a regular insulating layer pattern.
  • the pattern opening and quantity of the pattern is the position of the ITO through hole, and the pattern has a regular pattern, which is a circular opening, an elliptical opening, a triangular opening, a trapezoidal opening, a rectangular opening, and the like.
  • the ITO coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum ⁇ 5um;
  • the photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a regular ITO pattern or electrode having a thickness of 50-2000 ⁇ .
  • the ITO through-hole electrode has a regular pattern structure, and the number of the through holes may be one or several, and the through-hole electrode method has a circular punching, an elliptical punching, a triangular punching, a trapezoidal punching, a rectangular, etc.
  • Hole mode the purpose is to make the ITO via electrode and the ITO electrode (including ITO electrode 1 and ITO electrode 2) more stable and more reliable.
  • the through hole is opened on the first insulating layer (the position where the ITO through hole is required).
  • ITO via electrode conduction mode ITO electrode 1 is electrically connected upward through the via electrode of the first insulating layer, horizontally connected through the ITO via electrode on the first insulating layer, and then through the via electrode of the first insulating layer The lower electrode is connected to the ITO electrode 1, and the ITO electrode 1 is formed into a capacitive screen driving path.
  • the ITO electrode 2 is directly formed on the glass substrate, and the single ITO electrodes are connected to each other to directly conduct.
  • the transparent substrate forming the ITO electrode layer is subjected to a metal plating film to form a metal film layer having a uniform thickness on the transparent substrate, and has a thickness of 500 angstroms to 4000 angstroms.
  • the metal-coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the metal surface, and the photoresist coating thickness is lum ⁇ 5um;
  • the photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a regular metal pattern or electrode having a thickness of 500-4000 angstroms.
  • a thin layer of negative photoresist material is coated on the surface of the metal film, and the thickness of the photoresist coating is 0.5 um ⁇ 3 um;
  • the photoresist is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 to 3 um and a regular insulating layer pattern.
  • the capacitive functional substrate is a chemically strengthened glass substrate having a thickness of 0.33 to 0.7 mm;
  • the ITO comprises In203 and Sn02, and the mass ratio thereof is 85 ⁇ 95: 5 ⁇ 15.
  • the ITO coating method can be vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, or sol gel.
  • the main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and photosensitive material; the main components of the negative photoresist material are cyclohexanone, acrylic resin, epoxy resin and photosensitive material.
  • Coating photoresist materials are by roller coating, spin coating, and scraping.
  • the metal film layer of the metal coating is a sandwich structure formed by stacking MoNb, AlNd and MoNb, and the thickness is in the range of 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms.
  • the mass ratio of Mo and Nb in MoNb alloy material is 85-95: 5-15
  • the mass ratio of A1 and Nd in AlNd alloy material is 95 ⁇ 98: 2-5
  • Metal material selection can also be composed of silver alloy or copper alloy, and the components are combined in a certain proportion.
  • the metal coating is vacuum magnetron sputtering.
  • the present invention has the following advantages and beneficial effects:
  • the invention optimizes the laminated structure by rationally setting the laminated structure, and is designed as an ITO through-hole conducting electrode layer, thereby greatly improving the yield of the product and reducing the cost. Improve product reliability. Through reasonable design of each layer, the transmittance can reach more than 90%.
  • FIG. 1 is a schematic structural view of an ITO through-hole capacitive touch screen according to the present invention.
  • FIG. 2 is a schematic view showing a partial enlarged structure of an ITO through hole
  • FIG. 3 is a schematic cross-sectional view of the ITO via. detailed description
  • the ITO through-hole capacitive touch screen comprises a chemically-reinforced decorative glass substrate 11 having a thickness of 0.5 to 2.0 mm, and a capacitor functional substrate 13 laminated on the decorative glass substrate through an optical adhesive layer 12, and has a thickness of 0.33 to 0.7 mm, and an ITO electrode 14, a first insulating layer 15, an ITO via electrode 16, a metal electrode 17, and a second insulating layer 18 which are sequentially laminated on a capacitor functional substrate;
  • the ITO electrode includes a capacitive screen drive (ITO)
  • the electrode 1) and the sensing electrode (ITO electrode 2) have a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.
  • FIG. 2 and FIG. 3 are schematic diagrams showing a partial structure or a cross-sectional structure of the ITO through-hole capacitive touch screen according to the embodiment:
  • the first insulating layer 35 is insulated from the ITO via electrode 36 and is not electrically connected to each other.
  • the ITO electrode includes a capacitive screen drive (ITO electrode 1) 32 and a sensing electrode (ITO electrode 2) 33.
  • the ITO via electrode 36 serves as an ITO conduction function, turns on the capacitive screen drive or senses the line electrode, and has a regular pattern structure.
  • the flexible circuit board area where the ITO electrode signal is turned on is realized by the metal electrode.
  • the second insulating layer 34 protects the metal electrode from the ITO wire to insulate it from the air.
  • the preparation process is as follows:
  • the capacitor functional substrate 31 is chemically strengthened, and then subjected to ITO coating to make the capacitor
  • the functional substrate (functional sheet, which is a conductive glass) is formed with a transparent and uniform thickness of ⁇ film layer having a thickness of 50 angstroms to 2000 angstroms; the ITO material is composed of In203 and Sn02, and the mass ratio is 85-95. : 5 ⁇ 15.
  • ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.
  • the ITO coated transparent glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum ⁇ 5um; the main component of the positive photoresist material is propylene glycol monomethyl ether acetate. , epoxy resin and photosensitive materials.
  • the photoresist coating thickness is lum ⁇ 5um. Coating photoresist materials are by roller coating, spin coating, and scraping.
  • the product is pre-baked, exposed, developed, etched, and stripped with a photoresist to form a regular ITO pattern or electrode having a thickness of 50 to 2000 angstroms.
  • the pre-bake temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from lOOmj to 500mj, the developer is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees.
  • the ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls between 1 and 3, and the etching temperature is between 40 and 50 degrees.
  • the light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees.
  • the ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.
  • a transparent glass substrate after passing through the ITO electrode is coated with a uniform thickness of a negative photoresist material on the surface of the ITO film.
  • the main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin and Negative light agent (trade name: Taiwan Daxing Company produces POC A46), photoresist coating thickness is 0.5um ⁇ 3um; coating photoresist material has spin coating, scraping and other methods.
  • the pattern opening and quantity of the pattern is the position of the ITO through hole, and the pattern has a regular pattern, which is a circular opening, an elliptical opening, a triangular opening, a trapezoidal opening, and a rectangular shape. Opening holes, etc.
  • the product is pre-baked, exposed, and developed by photoresist, and finally forms a pattern of a thickness of 0.5 to 3 um and a regular insulating layer.
  • the pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees.
  • the condition is 200 to 300 degrees, and the time is from half an hour to 3 hours.
  • a first insulating layer having a thickness of 0.5 um to 3 um and a regular pattern is finally formed.
  • the transparent glass substrate forming the first insulating layer is again subjected to ITO coating to form a transparent and uniform thickness ITO film layer on the glass substrate, and the thickness thereof is 50 angstroms to 2000 angstroms (the surface resistance is 10 430 ohms).
  • the ITO material consists of In203 and Sn02 with a mass ratio of 85 ⁇ 95: 5 ⁇ 15. ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.
  • the ITO coated glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO.
  • the main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and positive photosensitive agent (product) It is called TR400 produced by Taiwan New Materials Co., Ltd.; the thickness of photoresist coating is lum ⁇ 5um. Coating photoresist materials are by roller coating, spin coating, and blade coating.
  • the product is pre-baked, exposed, developed, etched, and stripped with a photoresist to form a thickness of 50 to 2000 angstroms (face resistance of 10 to 430 ohms) and a regular ITO pattern or electrode.
  • the pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developing solution is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees.
  • the ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls between 1 and 3, and the etching temperature is between 40 and 50 degrees.
  • the de-filming solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees. industry.
  • the ITO through-hole electrode has a regular pattern structure, and the number of the through holes may be one or several, and the through-hole electrode method has a circular punching, an elliptical punching, a triangular punching, a trapezoidal punching, a rectangular, etc.
  • Hole mode the purpose is to make the contact between the ⁇ through hole electrode and the ⁇ electrode (including ⁇ electrode 1 and ⁇ electrode 2) more stable and more reliable.
  • the through hole is opened on the first insulating layer (the position where the through hole is required).
  • the ⁇ electrode 1 is electrically connected upward through the through hole electrode of the first insulating layer, horizontally connected through the ⁇ through hole electrode on the first insulating layer, and then through the through hole electrode of the first insulating layer
  • the lower electrode is connected to the germanium electrode 1, so that the germanium electrode 1 forms a capacitive screen drive path.
  • the tantalum electrode 2 is directly formed on the glass substrate, and a single tantalum electrode is connected and directly turned on.
  • the glass substrate forming the through-hole electrode layer is further subjected to metal plating to form a metal film layer having a uniform thickness on the glass substrate, and has a thickness of 500 angstroms to 4000 angstroms.
  • the metal film layer material is a sandwich structure composed of MoNb, AlNd, MoNb, and the thickness is matched in a certain proportion.
  • the mass ratio of Mo and Nb in the MoNb alloy material is 90:10, and the mass ratio of A1 and Nd in the AlNd alloy material is 97: 3.
  • the selection of the metal material can also be composed of a silver alloy or a copper alloy, and the components are combined in a certain ratio.
  • the metal coating is a vacuum-magnetized metal-coated glass substrate coated with a uniform thickness of positive photoresist material on the metal surface.
  • the main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and Positive light agent; photoresist coating thickness is lum ⁇ 5um.
  • Coating photoresist materials are by roller coating, spin coating, and scraping. After the above process, the product is pre-baked, exposed, developed, etched, and stripped to a thickness of 500-4000 angstroms and a regular metal pattern or electrode.
  • the pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developing solution is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees.
  • the light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees.
  • the glass substrate after the metal electrode is coated with a uniform thickness of the negative photoresist material on the surface of the metal film.
  • the main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin and negative Sexy light agent; photoresist coating thickness is 0.5um ⁇ 3um.
  • the photoresist material is applied by spin coating or scraping.
  • the product is pre-baked, exposed, and developed by photoresist, and finally forms a pattern of a thickness of 0.5 to 3 um and a regular insulating layer.
  • the pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees.
  • the condition is 200 to 300 degrees, and the time is 0.5 hours to 3 hours.
  • a second insulating layer having a thickness of 0.5 um to 3 um and a regular pattern is finally formed.

Abstract

Disclosed are an ITO through hole capacitive touch screen and a manufacturing method therefor. The ITO through hole capacitive touch screen comprises a decorative glass substrate, a capacitive functional substrate stacked on the decorative glass substrate via an optical glue, and, sequentially stacked on the capacitive functional substrate, an ITO electrode, a first insulation layer, an ITO through hole electrode, a metal electrode, and a second insulation layer. The ITO electrode comprises a capacitive screen driver (ITO electrode 1) and a sensing electrode (ITO electrode 2), and is provided with a patterned graphic design. ITO electrode 1 and ITO electrode 2 are on a same layer, and are mutually independent, mutually insulated, and vertical in design. The present invention uses for the capacitive touch screen the stacked structure and an ITO conduction scheme to perform a logical design, and employs the ITO through hole scheme to conduct up and down the ITO signal electrodes, thus allowing for the capacitive touch screen effectively improved transmittance, operational stability, and sensitivity to touch.

Description

说明书 一种 ITO通孔电容触摸屏及其制造方法 技术领域  ITO through-hole capacitance touch screen and manufacturing method thereof
本发明涉及电容触摸屏技术领域，尤其是涉及一种通过 ΙΤ0通孔 设计的电容触摸屏及其制造方法。 背景技术  The present invention relates to the field of capacitive touch screen technologies, and in particular, to a capacitive touch screen designed through a ΙΤ0 through hole and a method of fabricating the same. Background technique
随着电子科技的发展， 目前手机、 数码相机、 掌上游戏机、 车 载 DVD、 MP3、 仪表仪器等的键盘或鼠标逐渐被触摸屏替代。 触摸 屏的产品在几年前并不是十分火热，而随着人们对于触屏产品的接触 越来越多， 近两年也被更多人所认可， 发展速度逐渐加快。触摸屏迅 速的成长， 不仅激起了更加激烈的行业竞争， 也间接推动了技术的发 展，其多点触控的操作方式更是把触摸屏产品的影响力提升到了一个 新的高度， 也逐渐被人们所关注起来。  With the development of electronic technology, keyboards or mice for mobile phones, digital cameras, handheld game consoles, car DVDs, MP3s, instrumentation, etc. are gradually being replaced by touch screens. The products of touch screens were not very hot a few years ago, and with the increasing contact with touch screen products, they have been recognized by more people in the past two years, and the speed of development has gradually accelerated. The rapid growth of the touch screen has not only stimulated more intense industry competition, but also indirectly promoted the development of technology. Its multi-touch operation method has increased the influence of touch screen products to a new height, and has gradually been adopted by people. Concerned.
触摸屏主要由触摸检测部件和触摸屏控制器组成， 触摸检测部 件安装在显示器屏幕前面， 用于检测用户触摸位置， 接收后送触摸屏 控制器；而触摸屏控制器的主要作用是从触摸点检测装置上接收触摸 信息， 并将它转换成触点坐标， 再送给 CPU, 它同时能接收 CPU发 来的命令并加以执行。  The touch screen is mainly composed of a touch detecting component and a touch screen controller. The touch detecting component is installed in front of the display screen for detecting the touch position of the user, and is sent to the touch screen controller after receiving; and the main function of the touch screen controller is to receive from the touch point detecting device. Touch the information, convert it to the contact coordinates, and send it to the CPU. It can also receive commands from the CPU and execute them.
按照触摸屏的工作原理和传输信息的介质， 触摸屏可分为四种， 分别为电阻式、 电容感应式、 红外线式以及表面声波式， 当前被广泛 使用的是电阻式触摸屏， 它是利用压力感应进行电阻控制的； 电阻式 触摸屏是一种多层的复合薄膜，它的主要部分是一块与显示器表面非 常配合的电阻薄膜屏。电阻薄膜屏是以一层玻璃或硬塑料平板作为基 层， 表面涂有一层透明氧化金属（透明的导电电阻） ITO (氧化铟锡） 导电层， 上面再盖有一层外表面硬化处理光滑防擦的塑料层， 它的内 表面也涂有一层 ITO涂层， 在它们之间有许多细小的 （小于 1/1000 英寸）的透明隔离点把两层导电层隔开绝缘， 当手指触摸屏幕时， 两 层导电层在触摸点位置就有了接触， 电阻发生变化， 在 X和 Y两个 方向上产生信号， 然后送触摸屏控制器， 控制器侦测到这一接触并计 算出 （X, Y) 的位置， 再根据模拟鼠标的方式运作。 According to the working principle of the touch screen and the medium for transmitting information, the touch screen can be divided into four types: resistive type, capacitive sensing type, infrared type and surface acoustic wave type. Currently, a resistive touch screen is widely used, which uses pressure sensing. Resistively controlled; Resistive touch screen is a multi-layer composite film, the main part of which is a resistive film screen that fits perfectly with the display surface. The resistive film screen is a layer of glass or hard plastic plate as a base layer coated with a transparent oxidized metal (transparent conductive resistor) ITO (Indium Tin Oxide) conductive layer, which is covered with an outer surface hardened smooth anti-scratch The plastic layer, its inner surface is also coated with an ITO coating, there are many small between them (less than 1 / 1000) The transparent isolation point of the inch separates the two conductive layers from each other. When the finger touches the screen, the two conductive layers have contact at the touch point, the resistance changes, and signals are generated in both X and Y directions. Sending the touch screen controller, the controller detects this contact and calculates the position of (X, Y), and then operates according to the way of simulating the mouse.
电容式触摸屏的基本原理是利用人体的电流感应进行工作的， 电容式触摸屏是一块二层复合玻璃屏，玻璃屏的内表面夹层涂有 ιτο The basic principle of the capacitive touch screen is to use the current sensing of the human body. The capacitive touch screen is a two-layer composite glass screen, and the inner surface of the glass screen is coated with ιτο.
(氧化铟锡）导电膜（镀膜导电玻璃） ， 最外层是一薄层矽土玻璃保 护层， ITO涂层作为工作面， 四个角上引出四个电极， 当手指触摸在 屏幕上时， 由于人体电场， 用户和触摸屏表面形成一个耦合电容， 对 于高频电流来说， 电容是直接导体， 于是手指从接触点吸走一个很小 的电流， 这个电流分别从触摸屏的四角上的电极中流出， 并且流经这 四个电极的电流与手指到四角的距离成正比，控制器通过对这四个电 流比例的精确计算， 得出触摸点的位置。 (Indium Tin Oxide) conductive film (coated conductive glass), the outermost layer is a thin layer of bauxite glass protective layer, ITO coating as the working surface, four electrodes are led out at the four corners, when the finger touches the screen, Due to the human body electric field, the user and the touch screen surface form a coupling capacitor. For high-frequency current, the capacitor is a direct conductor, so the finger sucks a small current from the contact point, and this current flows out from the electrodes on the four corners of the touch screen. And the current flowing through the four electrodes is proportional to the distance from the finger to the four corners. The controller calculates the position of the touch point by accurately calculating the ratio of the four currents.
在电容式触摸屏中， 投射式电容触摸屏是当前应用较为广泛的 一种， 具有结构简单， 透光率高等特点。 投射式电容触摸屏的触摸感 应部件一般为多个行电极和列电极交错形成感应矩阵。通常采用的设 计方式包括将行电极和列电极分别设置在同一透明基板的两面，防止 在交错位置出现短路；或者将行电极和列电极设置在同一透明基板的 同侧， 形成于同一导电膜（通常为 ITO导电膜）上， 在行电极和列电 极交错的位置通过设置绝缘层并架导电桥的方式隔开，将行电极和列 电极隔开并保证在各自的方向上导通，可以有效的防止其在交错位置 短路。  In the capacitive touch screen, the projected capacitive touch screen is a widely used one, which has the characteristics of simple structure and high light transmittance. The touch sensing component of the projected capacitive touch screen generally has a plurality of row electrodes and column electrodes staggered to form an inductive matrix. The commonly used design method includes disposing the row electrode and the column electrode on both sides of the same transparent substrate to prevent short circuit at the staggered position; or disposing the row electrode and the column electrode on the same side of the same transparent substrate to form the same conductive film ( Generally, it is an ITO conductive film), and the row electrode and the column electrode are separated by an insulating layer and a conductive bridge is disposed at a position where the row electrode and the column electrode are staggered, and the row electrode and the column electrode are separated to ensure conduction in respective directions, which is effective. Prevent it from shorting in the staggered position.
通常采用的设计方案为： 行电极或者列电极之一在导电膜上连 续设置，则另一个电极在导电膜上以连续设置的电极为间隔设置成若 干电极块， 在交错点的位置通过导电桥将相邻的电极块电连接， 从而 形成另一方向上的连续电极；导电桥与连续设置的电极之间由绝缘层 分隔， 从而有效的阻止行电极和列电极在交错点短路。通常采用的设 计方案为： （1 ) 层叠结构依次为透明基板、 第一方向电极、 绝缘层、 导电桥； 或者 （2) 层叠结构依次为透明基板、 导电桥、 绝缘层、 第 一方向电极。 A commonly adopted design is: one of the row electrodes or the column electrodes is continuously disposed on the conductive film, and the other electrode is disposed on the conductive film at intervals of electrodes arranged in a plurality of electrode blocks, and the conductive bridge is disposed at the position of the staggered point. The adjacent electrode blocks are electrically connected to form a continuous electrode in the other direction; the conductive bridge is separated from the continuously disposed electrodes by an insulating layer, thereby effectively preventing the row electrode and the column electrode from being short-circuited at the staggered point. Usually used The plan is: (1) the laminated structure is a transparent substrate, a first direction electrode, an insulating layer, and a conductive bridge; or (2) the laminated structure is a transparent substrate, a conductive bridge, an insulating layer, and a first direction electrode.
但采用传统的设计方案的电容式触摸屏会存在透光率不高以及 工作稳定性差的缺陷，传统的设计方案的电容式触摸屏透光率很难突 破 80%, 且整体受力弯曲变形时， 容易在界面出现分离， 导致电极断 路触摸失效， 触摸感应部件损坏。 发明内容  However, the capacitive touch screen adopting the traditional design scheme may have the defects of low light transmittance and poor working stability. The transmittance of the capacitive touch screen of the conventional design scheme is difficult to break through 80%, and the whole force is bent and deformed easily. Separation occurs at the interface, causing the electrode to open the touch to fail and the touch sensing component to be damaged. Summary of the invention
本发明的目的之一在于提供一种 ιτο通孔电容触摸屏， 通过对 电容触摸屏的层叠结构以及 ITO导通方式进行合理的设计，采用 ITO 通孔的方式上下导通 ITO信号电极，有效的提高电容式触摸屏的透光 率， 工作稳定性以及触摸灵敏度。  One of the objectives of the present invention is to provide a ιτο through-hole capacitive touch screen. By rationally designing the laminated structure of the capacitive touch screen and the ITO conduction mode, the ITO signal electrode is electrically connected up and down by means of an ITO through hole, thereby effectively increasing the capacitance. Light transmittance, work stability and touch sensitivity of the touch screen.
为实现上述目的， 本发明采用如下技术方案：  To achieve the above object, the present invention adopts the following technical solutions:
一种 ITO通孔电容触摸屏， 包括  An ITO through-hole capacitive touch screen, including
包括装饰玻璃基板 (盖板玻璃)， 通过光学胶层叠于装饰玻璃基板 上的电容功能基板， 以及依次层叠于电容功能基板的 ιτο电极、 第 一绝缘层、 ITO通孔电极、 金属电极和第二绝缘层； 所述的 ITO电极 包括电容屏驱动 (ITO电极 1)和感应电极 (ITO电极 2)， 具有规则图形 结构； ITO电极 1与 ITO电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计。  The invention comprises a decorative glass substrate (cover glass), a capacitor functional substrate laminated on the decorative glass substrate by optical glue, and an ITO electrode, a first insulating layer, an ITO via electrode, a metal electrode and a second layer which are sequentially laminated on the capacitor functional substrate. The ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed .
优选的是：所述的电容功能基板厚度为 0.33~0.7毫米的化学强化 玻璃基板； 所述的装饰玻璃基板厚度为 0.5~2.0毫米的化学强化玻璃 基板； 电容功能基板材质为硼硅或钠钙玻璃； 所述 ΠΌ通孔电极的 通孔的个数可以是一个或者数个， 通孔电极方式有圆形打孔， 椭圆形 打孔， 三角形打孔， 梯形打孔， 或长方形打孔；  Preferably, the capacitive functional substrate has a thickness of 0.33 to 0.7 mm of a chemically strengthened glass substrate; the decorative glass substrate has a thickness of 0.5 to 2.0 mm of a chemically strengthened glass substrate; and the capacitive functional substrate is made of borosilicate or sodium calcium. The number of the through holes of the through hole electrode may be one or several, and the through hole electrode has a circular hole, an elliptical hole, a triangular hole, a trapezoidal hole, or a rectangular hole;
所述 ITO电极层厚度为 50~2000埃米 (面电阻为 10~430欧姆)； 第一绝缘层的厚度为 0.5~3um; 所述的 IT0通孔电极厚度为 50埃米 -2000埃米 (面电阻为 10~430欧姆)； 金属电极层的厚度为 500~4000 埃米； 第二绝缘层厚度为 0.5~3um。 The ITO electrode layer has a thickness of 50 to 2000 angstroms (face resistance is 10 to 430 ohms); The thickness of the first insulating layer is 0.5~3um ; the thickness of the IT0 via electrode is 50 angstroms to 2000 angstroms (the surface resistance is 10~430 ohms); the thickness of the metal electrode layer is 500~4000 angstroms; The thickness of the second insulating layer is 0.5~3um.
所述的金属镀膜的金属膜层为 MoNb, AlNd, MoNb堆积而成的 三明治结构， 厚度按 50埃米 ~500埃米: 500埃米 ~3000埃米: 50埃米 -500埃米比例搭配， 其中 MoNb合金材料中 Mo和 Nb质量比为 85-95： 5-15, AlNd合金材料中 A1和 Nd质量比为 95~98： 2-5 所述的第一绝缘层使 ITO电极与 ITO通孔电极处于绝缘状况， 互不导通。 ITO通孔电极起到 ITO导通作用， 导通电容屏驱动或感应 线路电极， 具有规则图形结构。 ιτο电极信号导通的柔性线路板邦定 区域通过金属电极实现。 第二绝缘层保护金属电极与 ITO导线， 使 之与空气绝缘。  The metal film layer of the metal coating is a sandwich structure formed by stacking MoNb, AlNd and MoNb, and the thickness is in the range of 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms. The mass ratio of Mo and Nb in the MoNb alloy material is 85-95: 5-15, and the mass ratio of A1 and Nd in the AlNd alloy material is 95~98: 2-5 The first insulating layer makes the ITO electrode and the ITO through hole The electrodes are in an insulated condition and do not conduct each other. The ITO via electrode acts as an ITO turn-on, turns on the capacitive screen drive or senses the line electrode, and has a regular pattern structure. The flexible circuit board bonding area where the electrode signal is turned on is realized by the metal electrode. The second insulating layer protects the metal electrode from the ITO wire to insulate it from the air.
本发明的目的之二在于提供一种 ιτο通孔电容触摸屏的制造方 法， 采用如下技术方案：  A second object of the present invention is to provide a method for manufacturing a ιτο through-hole capacitive touch screen, which adopts the following technical solutions:
ITO电极的形成：  Formation of ITO electrodes:
电容功能基板进行化学强化，再经过 ITO镀膜，使在电容功能基 板上形成一层透明及厚度均匀的 ITO膜层， 其厚度为 50埃米 ~2000 埃米 (面电阻为 10~430欧姆)；  The capacitive functional substrate is chemically strengthened, and then ITO coated to form a transparent and uniform thickness ITO film layer on the capacitive functional substrate, the thickness of which is 50 angstroms to 2000 angstroms (the surface resistance is 10 to 430 ohms);
经过 ITO镀膜的透明基板， 在其 ITO表面涂布一层厚度均匀的 正性光阻材料， 光阻涂布厚度为 lum~5um;  The ITO coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum~5um;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50-2000埃米 (面电阻为 10~430欧姆)及规则 ITO图案或电极。  The photoresist is pre-baked, exposed, developed, etched, and stripped to a final thickness of 50-2000 angstroms (face resistance of 10 to 430 ohms) and regular ITO patterns or electrodes.
所述的 ITO电极包括电容屏驱动 (ITO电极 1)和感应电极 (ITO电 极 2)， 具有规则图形结构； ITO电极 1与 ITO电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计。  The ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.
第一绝缘层的形成：  Formation of the first insulating layer:
经过 ITO过桥电极后的透明基板， 在其 ITO膜面涂布一层厚度 均匀的负性光阻材料， 光阻涂布厚度为 0.5um~3um; The transparent substrate after passing through the ITO bridge electrode is coated with a thickness on the surface of the ITO film. Uniform negative photoresist material, photoresist coating thickness is 0.5um~3um;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3um和规则的 绝缘层图案。  The photoresist is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 to 3 um and a regular insulating layer pattern.
所述的图案开孔方式和数量即为 ITO通孔的位置，图案有规则图 形， 分别为圆形开孔， 椭圆形开孔， 三角形开孔， 梯形开孔， 长方形 开孔等方式  The pattern opening and quantity of the pattern is the position of the ITO through hole, and the pattern has a regular pattern, which is a circular opening, an elliptical opening, a triangular opening, a trapezoidal opening, a rectangular opening, and the like.
ITO通孔电极层的形成：  Formation of ITO via electrode layer:
形成第一绝缘层的透明基板，再次经过 ITO镀膜，使在玻璃基板 上形成一层透明及厚度均匀的 ITO膜层， 其厚度为 50埃米 ~2000埃 米；  Forming a transparent substrate of the first insulating layer, and again performing ITO coating to form a transparent and uniform thickness ITO film layer on the glass substrate, the thickness of which is 50 angstroms to 2000 angstroms;
经过 ITO镀膜的透明基板， 在其 ITO表面涂布一层厚度均匀的 正性光阻材料， 光阻涂布厚度为 lum~5um;  The ITO coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum~5um;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50-2000埃米及规则 ITO图案或电极。  The photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a regular ITO pattern or electrode having a thickness of 50-2000 Å.
所述的 ITO通孔电极具有规则图形结构， 通孔的个数可以是一 个或者数个， 通孔电极方式有圆形打孔， 椭圆形打孔， 三角形打孔， 梯形打孔， 长方形等打孔方式， 目的使 ITO通孔电极与 ITO电极 (含 ITO电极 1和 ITO电极 2)接触更稳定， 更可靠。 所述通孔开在第一 绝缘层上 (需要 ITO通孔的位置)。  The ITO through-hole electrode has a regular pattern structure, and the number of the through holes may be one or several, and the through-hole electrode method has a circular punching, an elliptical punching, a triangular punching, a trapezoidal punching, a rectangular, etc. Hole mode, the purpose is to make the ITO via electrode and the ITO electrode (including ITO electrode 1 and ITO electrode 2) more stable and more reliable. The through hole is opened on the first insulating layer (the position where the ITO through hole is required).
ITO通孔电极导通方式： ITO电极 1通过第一绝缘层的通孔电极 向上导通， 在通过第一绝缘层上的 ITO通孔电极水平连接， 再通过 第一绝缘层的通孔电极向下导通到 ITO电极 1，使 ITO电极 1形成电 容屏驱动通路。 ITO电极 2直接成膜在玻璃基板上，单个 ITO电极相 连， 直接导通  ITO via electrode conduction mode: ITO electrode 1 is electrically connected upward through the via electrode of the first insulating layer, horizontally connected through the ITO via electrode on the first insulating layer, and then through the via electrode of the first insulating layer The lower electrode is connected to the ITO electrode 1, and the ITO electrode 1 is formed into a capacitive screen driving path. The ITO electrode 2 is directly formed on the glass substrate, and the single ITO electrodes are connected to each other to directly conduct.
金属电极层的形成：  Formation of the metal electrode layer:
形成 ITO电极层的透明基板，经过金属镀膜，使之在透明基板上 形成一层厚度均匀的金属膜层， 其厚度为 500埃米 ~4000埃米。 经过金属镀膜的透明基板，在其金属表面涂布一层厚度均匀的正 性光阻材料， 光阻涂布厚度为 lum~5um; The transparent substrate forming the ITO electrode layer is subjected to a metal plating film to form a metal film layer having a uniform thickness on the transparent substrate, and has a thickness of 500 angstroms to 4000 angstroms. The metal-coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the metal surface, and the photoresist coating thickness is lum~5um;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 500-4000埃米及规则金属图案或电极。  The photoresist is pre-baked, exposed, developed, etched, and the photoresist is removed to form a regular metal pattern or electrode having a thickness of 500-4000 angstroms.
第二绝缘层的形成：  Formation of the second insulating layer:
经过金属电极后的透明基板，在其金属膜面涂布一层厚度均匀的 负性光阻材料， 光阻涂布厚度为 0.5um~3um;  After passing through the transparent substrate of the metal electrode, a thin layer of negative photoresist material is coated on the surface of the metal film, and the thickness of the photoresist coating is 0.5 um~3 um;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3um和规则的 绝缘层图案。  The photoresist is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 to 3 um and a regular insulating layer pattern.
优选的：所述的电容功能基板为厚度在 0.33~0.7毫米的化学强化 玻璃基板；  Preferably, the capacitive functional substrate is a chemically strengthened glass substrate having a thickness of 0.33 to 0.7 mm;
所述的 ITO包括 In203和 Sn02， 其质量比为 85~95： 5~15。 The ITO comprises In203 and Sn02, and the mass ratio thereof is 85~95: 5~15.
ITO镀膜的方式可以采用真空磁控溅镀， 化学气相沉积法， 热蒸 镀， 溶胶凝胶。 The ITO coating method can be vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, or sol gel.
正性光阻材料主成分为乙酸丙二醇单甲基醚酯，环氧树脂及感光 材料； 负性光阻材料主成分为环己酮， 亚克力树脂， 环氧树脂及感光 材料。  The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and photosensitive material; the main components of the negative photoresist material are cyclohexanone, acrylic resin, epoxy resin and photosensitive material.
涂布光阻材料方式有滚涂， 旋涂， 刮涂等方式。  Coating photoresist materials are by roller coating, spin coating, and scraping.
所述的金属镀膜的金属膜层为 MoNb, AlNd, MoNb堆积而成的 三明治结构， 厚度按 50埃米 ~500埃米: 500埃米 ~3000埃米: 50埃米 -500埃米比例搭配， 其中 MoNb合金材料中 Mo和 Nb质量比为 85-95： 5-15, AlNd合金材料中 A1和 Nd质量比为 95~98： 2-5  The metal film layer of the metal coating is a sandwich structure formed by stacking MoNb, AlNd and MoNb, and the thickness is in the range of 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms. Among them, the mass ratio of Mo and Nb in MoNb alloy material is 85-95: 5-15, and the mass ratio of A1 and Nd in AlNd alloy material is 95~98: 2-5
金属材料选型也可由银合金或铜合金组成，成分按一定比例组合 而成。 金属镀膜为真空磁控溅镀。  Metal material selection can also be composed of silver alloy or copper alloy, and the components are combined in a certain proportion. The metal coating is vacuum magnetron sputtering.
本发明与现有技术相比， 具有如下优点和有益效果：  Compared with the prior art, the present invention has the following advantages and beneficial effects:
本发明通过对层叠结构进行合理的设置， 优化层叠结构， 设计 为 ITO通孔导通电极层等方式， 大幅提升了产品的良率， 降低成本， 提升产品可靠性。通过对各层的合理设计，使得透过率可以达到 90% 以上。 附图说明 The invention optimizes the laminated structure by rationally setting the laminated structure, and is designed as an ITO through-hole conducting electrode layer, thereby greatly improving the yield of the product and reducing the cost. Improve product reliability. Through reasonable design of each layer, the transmittance can reach more than 90%. DRAWINGS
图 1为本发明所述的 ITO通孔电容触摸屏的结构示意图;  1 is a schematic structural view of an ITO through-hole capacitive touch screen according to the present invention;
图 2为 ITO通孔局部放大结构示意图图；  2 is a schematic view showing a partial enlarged structure of an ITO through hole;
图 3为 ITO通孔的剖面结构示意图。 具体实施方式  Figure 3 is a schematic cross-sectional view of the ITO via. detailed description
下面结合具体实施例对本发明作进一步详细说明。  The present invention will be further described in detail below in conjunction with specific embodiments.
如图 1所示， 所述的 ITO通孔电容触摸屏， 包括厚度在 0.5~2.0 毫米的化学强化装饰玻璃基板 11， 通过光学胶层层 12叠于装饰玻璃 基板上的电容功能基板 13， 厚度为 0.33~0.7毫米， 以及依次层叠于 电容功能基板的 ITO电极 14、 第一绝缘层 15、 ITO通孔电极 16、 金 属电极 17和第二绝缘层 18; 所述的 ITO电极包括电容屏驱动 (ITO 电极 1)和感应电极 (ITO电极 2)， 具有规则图形结构； ITO电极 1与 ITO电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计。  As shown in FIG. 1 , the ITO through-hole capacitive touch screen comprises a chemically-reinforced decorative glass substrate 11 having a thickness of 0.5 to 2.0 mm, and a capacitor functional substrate 13 laminated on the decorative glass substrate through an optical adhesive layer 12, and has a thickness of 0.33 to 0.7 mm, and an ITO electrode 14, a first insulating layer 15, an ITO via electrode 16, a metal electrode 17, and a second insulating layer 18 which are sequentially laminated on a capacitor functional substrate; the ITO electrode includes a capacitive screen drive (ITO) The electrode 1) and the sensing electrode (ITO electrode 2) have a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.
图 2及图 3所示为本实施例所述 ITO通孔电容触摸屏的局部结构 放大示意图或者剖面结构示意图： 第一绝缘层 35使 ITO电极与 ITO 通孔电极 36处于绝缘状况，互不导通； ITO电极包括电容屏驱动 (ITO 电极 1)32和感应电极 (ITO电极 2)33。 ITO通孔电极 36起到 ITO导 通作用， 导通电容屏驱动或感应线路电极， 具有规则图形结构。 ITO 电极信号导通的柔性线路板区域通过金属电极实现。 第二绝缘层 34 保护金属电极与 ITO导线， 使之与空气绝缘。  FIG. 2 and FIG. 3 are schematic diagrams showing a partial structure or a cross-sectional structure of the ITO through-hole capacitive touch screen according to the embodiment: The first insulating layer 35 is insulated from the ITO via electrode 36 and is not electrically connected to each other. The ITO electrode includes a capacitive screen drive (ITO electrode 1) 32 and a sensing electrode (ITO electrode 2) 33. The ITO via electrode 36 serves as an ITO conduction function, turns on the capacitive screen drive or senses the line electrode, and has a regular pattern structure. The flexible circuit board area where the ITO electrode signal is turned on is realized by the metal electrode. The second insulating layer 34 protects the metal electrode from the ITO wire to insulate it from the air.
其制备工艺如下：  The preparation process is as follows:
ITO电极的形成：  Formation of ITO electrodes:
对电容功能基板 31进行化学强化， 再经过 ITO镀膜， 使在电容 功能基板（功能片，其为导电玻璃）上形成一层透明及厚度均匀的 ιτο 膜层，其厚度为 50埃米 ~2000埃米； ITO材料由 In203和 Sn02组成， 其质量比为 85~95： 5~15。 ITO镀膜的方式有真空磁控溅镀， 化学气 相沉积法， 热蒸镀， 溶胶凝胶。 The capacitor functional substrate 31 is chemically strengthened, and then subjected to ITO coating to make the capacitor The functional substrate (functional sheet, which is a conductive glass) is formed with a transparent and uniform thickness of ιτο film layer having a thickness of 50 angstroms to 2000 angstroms; the ITO material is composed of In203 and Sn02, and the mass ratio is 85-95. : 5~15. ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.
经过 ITO镀膜的透明玻璃基板， 在其 ITO表面涂布一层厚度均 匀的正性光阻材料， 光阻涂布厚度为 lum~5um; 正性光阻材料主成 分为乙酸丙二醇单甲基醚酯， 环氧树脂及感光材料。光阻涂布厚度为 lum~5um。 涂布光阻材料方式有滚涂， 旋涂， 刮涂等方式。  The ITO coated transparent glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum~5um; the main component of the positive photoresist material is propylene glycol monomethyl ether acetate. , epoxy resin and photosensitive materials. The photoresist coating thickness is lum~5um. Coating photoresist materials are by roller coating, spin coating, and scraping.
经过上述制程之后产品经过光阻预烤， 曝光， 显影， 蚀刻， 脱光 阻膜， 最终形成厚度为 50~2000埃米及规则 ITO图案或电极。 预烤 温度及时间范围为: 60度~150度， 50秒到 200秒，曝光能量采用 lOOmj 到 500mj，显影液采用 Na系或 Ka系碱性溶液，显影之温度采用 20~40 度恒温作业。 ITO 蚀刻液采用盐酸及硝酸按一定比例混合而成的药 液， 使其酸的 pH值落在 1~3之间， 蚀刻温度在 40~50度之间作业。 脱光阻膜液采用二甲亚砜和乙醇胺按一定的比例混合而成，百分比为 70%： 30%, 脱膜温度在 40~80度之间作业。  After the above process, the product is pre-baked, exposed, developed, etched, and stripped with a photoresist to form a regular ITO pattern or electrode having a thickness of 50 to 2000 angstroms. The pre-bake temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from lOOmj to 500mj, the developer is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. The ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls between 1 and 3, and the etching temperature is between 40 and 50 degrees. The light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees.
所述的 ITO电极包括电容屏驱动 (ITO电极 1)和感应电极 (ITO电 极 2)， 具有规则图形结构； ITO电极 1与 ITO电极 2在同一层面， 相互独立， 相互绝缘， 垂直设计。  The ITO electrode comprises a capacitive screen drive (ITO electrode 1) and a sensing electrode (ITO electrode 2) having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed.
第一绝缘层的形成：  Formation of the first insulating layer:
经过 ITO电极后的透明玻璃基板， 在其 ITO膜面涂布一层厚度 均匀的负性光阻材料， 负性光阻材料主成分为乙酸丙二醇单甲基醚 酯， 亚克力树脂， 环氧树脂及负性感光剂（商品名为台湾达兴公司生 产 POC A46), 光阻涂布厚度为 0.5um~3um; 涂布光阻材料方式有旋 涂， 刮涂等方式。  A transparent glass substrate after passing through the ITO electrode is coated with a uniform thickness of a negative photoresist material on the surface of the ITO film. The main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin and Negative light agent (trade name: Taiwan Daxing Company produces POC A46), photoresist coating thickness is 0.5um~3um; coating photoresist material has spin coating, scraping and other methods.
所述的图案开孔方式和数量即为 ITO通孔的位置，图案有规则图 形， 分别为圆形开孔， 椭圆形开孔， 三角形开孔， 梯形开孔， 长方形 开孔等方式。 The pattern opening and quantity of the pattern is the position of the ITO through hole, and the pattern has a regular pattern, which is a circular opening, an elliptical opening, a triangular opening, a trapezoidal opening, and a rectangular shape. Opening holes, etc.
经过上述制程之后产品经过光阻预烤， 曝光， 显影， 最终形成厚 度为 0.5~3um和规则的绝缘层图案。 预烤温度及时间范围为: 60 度 ~150度， 50秒到 200秒， 曝光能量采用 lOOmj到 500mj， 显影液采 用 Na系或 Ka系碱性溶液， 显影之温度采用 20~40度恒温作业。 再 经过绝缘层硬烤， 条件为 200度到 300度， 时间为半小时到 3小时， 经过上述制程后，最终形成厚度为 0.5um~3um， 图形规则的第一绝缘 层。  After the above process, the product is pre-baked, exposed, and developed by photoresist, and finally forms a pattern of a thickness of 0.5 to 3 um and a regular insulating layer. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. After hard baking through the insulating layer, the condition is 200 to 300 degrees, and the time is from half an hour to 3 hours. After the above process, a first insulating layer having a thickness of 0.5 um to 3 um and a regular pattern is finally formed.
ITO通孔电极层的形成：  Formation of ITO via electrode layer:
形成第一绝缘层的透明玻璃基板，再次经过 ITO镀膜，使在玻璃 基板上形成一层透明及厚度均匀的 ITO膜层，其厚度为 50埃米 ~2000 埃米 (面电阻为 10~430欧姆)； ITO材料由 In203和 Sn02组成， 其质 量比为 85~95： 5~15。 ITO镀膜的方式有真空磁控溅镀， 化学气相沉 积法， 热蒸镀， 溶胶凝胶。  The transparent glass substrate forming the first insulating layer is again subjected to ITO coating to form a transparent and uniform thickness ITO film layer on the glass substrate, and the thickness thereof is 50 angstroms to 2000 angstroms (the surface resistance is 10 430 ohms). The ITO material consists of In203 and Sn02 with a mass ratio of 85~95: 5~15. ITO coating methods include vacuum magnetron sputtering, chemical vapor deposition, thermal evaporation, and sol gel.
经过 ITO镀膜的玻璃基板， 在其 ITO表面涂布一层厚度均匀的 正性光阻材料， 正性光阻材料主成分为乙酸丙二醇单甲基醚酯， 环氧 树脂及正性感光剂 （商品名为台湾新应材公司生产的 TR400); 光阻 涂布厚度为 lum~5um。 涂布光阻材料方式有滚涂， 旋涂， 刮涂等方 式。  The ITO coated glass substrate is coated with a uniform thickness of positive photoresist material on the surface of the ITO. The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and positive photosensitive agent (product) It is called TR400 produced by Taiwan New Materials Co., Ltd.; the thickness of photoresist coating is lum~5um. Coating photoresist materials are by roller coating, spin coating, and blade coating.
经过上述制程之后产品经过光阻预烤， 曝光， 显影， 蚀刻， 脱光 阻膜， 最终形成厚度为 50~2000埃米 (面电阻为 10~430欧姆)及规则 ITO图案或电极。 预烤温度及时间范围为: 60度~150度， 50秒到 200 秒， 曝光能量采用 lOOmj到 500mj， 显影液采用 Na系或 Ka系碱性 溶液， 显影之温度采用 20~40度恒温作业。 ITO蚀刻液采用盐酸及硝 酸按一定比例混合而成的药液， 使其酸的 PH值落在 1~3之间， 蚀刻 温度在 40~50度之间作业。脱光阻膜液采用二甲亚砜和乙醇胺按一定 的比例混合而成， 百分比为 70%: 30%, 脱膜温度在 40~80度之间作 业。 After the above process, the product is pre-baked, exposed, developed, etched, and stripped with a photoresist to form a thickness of 50 to 2000 angstroms (face resistance of 10 to 430 ohms) and a regular ITO pattern or electrode. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developing solution is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. The ITO etching solution is a mixture of hydrochloric acid and nitric acid in a certain ratio, so that the pH of the acid falls between 1 and 3, and the etching temperature is between 40 and 50 degrees. The de-filming solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees. industry.
所述的 ITO通孔电极具有规则图形结构， 通孔的个数可以是一 个或者数个， 通孔电极方式有圆形打孔， 椭圆形打孔， 三角形打孔， 梯形打孔， 长方形等打孔方式， 目的使 ΙΤΟ通孔电极与 ΙΤΟ电极 (含 ΙΤΟ电极 1和 ΙΤΟ电极 2)接触更稳定， 更可靠。 所述通孔开在第一 绝缘层上 (需要 ΙΤΟ通孔的位置)。  The ITO through-hole electrode has a regular pattern structure, and the number of the through holes may be one or several, and the through-hole electrode method has a circular punching, an elliptical punching, a triangular punching, a trapezoidal punching, a rectangular, etc. Hole mode, the purpose is to make the contact between the ΙΤΟ through hole electrode and the ΙΤΟ electrode (including ΙΤΟ electrode 1 and ΙΤΟ electrode 2) more stable and more reliable. The through hole is opened on the first insulating layer (the position where the through hole is required).
ΙΤΟ通孔电极导通方式 :ΙΤΟ电极 1通过第一绝缘层的通孔电极向 上导通， 在通过第一绝缘层上的 ΙΤΟ通孔电极水平连接， 再通过第 一绝缘层的通孔电极向下导通到 ΙΤΟ电极 1，使 ΙΤΟ电极 1形成电容 屏驱动通路。 ΙΤΟ电极 2直接成膜在玻璃基板上，单个 ΙΤΟ电极相连， 直接导通。  ΙΤΟthrough hole electrode conduction mode: the ΙΤΟ electrode 1 is electrically connected upward through the through hole electrode of the first insulating layer, horizontally connected through the ΙΤΟ through hole electrode on the first insulating layer, and then through the through hole electrode of the first insulating layer The lower electrode is connected to the germanium electrode 1, so that the germanium electrode 1 forms a capacitive screen drive path. The tantalum electrode 2 is directly formed on the glass substrate, and a single tantalum electrode is connected and directly turned on.
金属电极层的形成：  Formation of the metal electrode layer:
形成 ΙΤΟ通孔电极层的玻璃基板，再经过金属镀膜，使在玻璃基 板上形成一层厚度均匀的金属膜层， 其厚度为 500埃米 ~4000埃米。 金属膜层材料由 MoNb, AlNd, MoNb堆积而成的三明治结构， 厚度 按一定比例搭配，其中 MoNb合金材料中 Mo和 Nb质量比为 90: 10， AlNd合金材料中 A1和 Nd质量比为 97: 3。 金属材料选型也可由银 合金或铜合金组成， 成分按一定比例组合而成。金属镀膜为真空磁控 经过金属镀膜的玻璃基板，在其金属表面涂布一层厚度均匀的正 性光阻材料， 正性光阻材料主成分为乙酸丙二醇单甲基醚酯， 环氧树 脂及正性感光剂； 光阻涂布厚度为 lum~5um。 涂布光阻材料方式有 滚涂， 旋涂， 刮涂等方式。 经过上述制程之后产品经过光阻预烤， 曝 光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 500~4000埃米及规则 金属图案或电极。 预烤温度及时间范围为: 60度~150度， 50秒到 200 秒， 曝光能量采用 lOOmj到 500mj， 显影液采用 Na系或 Ka系碱性 溶液， 显影之温度采用 20~40度恒温作业。金属蚀刻液采用磷酸、 醋 酸及硝酸按一定比例混合而成的药液， 蚀刻温度在 40~50 度之间作 业。脱光阻膜液采用二甲亚砜和乙醇胺按一定的比例混合而成， 百分 比为 70% : 30%, 脱膜温度在 40~80度之间作业。 The glass substrate forming the through-hole electrode layer is further subjected to metal plating to form a metal film layer having a uniform thickness on the glass substrate, and has a thickness of 500 angstroms to 4000 angstroms. The metal film layer material is a sandwich structure composed of MoNb, AlNd, MoNb, and the thickness is matched in a certain proportion. The mass ratio of Mo and Nb in the MoNb alloy material is 90:10, and the mass ratio of A1 and Nd in the AlNd alloy material is 97: 3. The selection of the metal material can also be composed of a silver alloy or a copper alloy, and the components are combined in a certain ratio. The metal coating is a vacuum-magnetized metal-coated glass substrate coated with a uniform thickness of positive photoresist material on the metal surface. The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and Positive light agent; photoresist coating thickness is lum~5um. Coating photoresist materials are by roller coating, spin coating, and scraping. After the above process, the product is pre-baked, exposed, developed, etched, and stripped to a thickness of 500-4000 angstroms and a regular metal pattern or electrode. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 m to 500 mj, the developing solution is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. Metal etching solution using phosphoric acid, vinegar A chemical solution in which acid and nitric acid are mixed in a certain ratio, and the etching temperature is between 40 and 50 degrees. The light-removing film solution is prepared by mixing dimethyl sulfoxide and ethanolamine in a certain ratio, the percentage is 70%: 30%, and the film removal temperature is between 40 and 80 degrees.
第二绝缘层的形成：  Formation of the second insulating layer:
经过金属电极后的玻璃基板，在其金属膜面涂布一层厚度均匀的 负性光阻材料， 负性光阻材料主成分为乙酸丙二醇单甲基醚酯， 亚克 力树脂， 环氧树脂及负性感光剂； 光阻涂布厚度为 0.5um~3um。涂布 光阻材料方式有旋涂， 刮涂等方式。  The glass substrate after the metal electrode is coated with a uniform thickness of the negative photoresist material on the surface of the metal film. The main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin and negative Sexy light agent; photoresist coating thickness is 0.5um~3um. The photoresist material is applied by spin coating or scraping.
经过上述制程之后产品经过光阻预烤， 曝光， 显影， 最终形成厚 度为 0.5~3um和规则的绝缘层图案。 预烤温度及时间范围为: 60 度 ~150度， 50秒到 200秒， 曝光能量采用 lOOmj到 500mj， 显影液采 用 Na系或 Ka系碱性溶液， 显影之温度采用 20~40度恒温作业。 再 经过绝缘层硬烤，条件为 200度到 300度，时间为 0.5小时到 3小时， 经过上述制程后，最终形成厚度为 0.5um~3um， 图形规则的第二绝缘 层。  After the above process, the product is pre-baked, exposed, and developed by photoresist, and finally forms a pattern of a thickness of 0.5 to 3 um and a regular insulating layer. The pre-baking temperature and time range are: 60 degrees to 150 degrees, 50 seconds to 200 seconds, the exposure energy is from 100 to 100 mj, the developer is Na-based or Ka-based alkaline solution, and the developing temperature is operated at a constant temperature of 20 to 40 degrees. After hard baking through the insulating layer, the condition is 200 to 300 degrees, and the time is 0.5 hours to 3 hours. After the above process, a second insulating layer having a thickness of 0.5 um to 3 um and a regular pattern is finally formed.
以上内容是结合具体的优选实施方式对本发明所作的进一步详 细说明， 不能认定本发明的具体实施只局限于这些说明。对于本发明 所属技术领域的普通技术人员来说， 在不脱离本发明构思的前提下， 还可以做出若干简单推演或替换， 都应当视为属于本发明的保护范 围。  The above is a further detailed description of the present invention in connection with the specific preferred embodiments, and the specific embodiments of the present invention are not limited to the description. It will be apparent to those skilled in the art that the present invention may be practiced without departing from the spirit and scope of the invention.

Claims

权 利 要 求 书 Claim
1、 一 †lTO通孔电容触摸屏， 包括装饰玻璃基板， 通过光学 胶层叠于装饰基板上的电容功能基板，以及依次层叠于电容功能基板 的 ITO电极、 第一绝缘层、 ITO通孔电极、 金属电极和第二绝缘层； 所述的 ITO电极包括电容屏驱动和感应电极， 具有规则图形结构； 电容屏驱动与感应电极在同一层面，相互独立，相互绝缘，垂直设计。 1. A lTO through-hole capacitive touch screen comprising a decorative glass substrate, a capacitive functional substrate laminated on the decorative substrate by optical glue, and an ITO electrode, a first insulating layer, an ITO via electrode, and a metal laminated on the capacitive functional substrate in this order. The electrode and the second insulating layer; the ITO electrode comprises a capacitive screen driving and sensing electrode, having a regular pattern structure; the capacitive screen driving and the sensing electrode are on the same level, independent of each other, insulated from each other, and vertically designed.
2、 如权利要求 1所述的 ITO通孔电容触摸屏， 其特征是： 所述 的电容功能基板厚度为 0.33~0.7毫米的化学强化玻璃基板；所述的装 饰玻璃基板厚度为 0.5~2.0毫米的化学强化玻璃基板； 所述 ITO通孔 电极的通孔的个数可以是一个或者数个， 通孔电极方式有圆形打孔， 椭圆形打孔， 三角形打孔， 梯形打孔， 或长方形打孔。  2. The ITO through-hole capacitive touch screen according to claim 1, wherein: said capacitive functional substrate has a thickness of 0.33 to 0.7 mm of a chemically strengthened glass substrate; and said decorative glass substrate has a thickness of 0.5 to 2.0 mm. The chemically strengthened glass substrate; the number of the through holes of the ITO through hole electrode may be one or several, and the through hole electrode has a circular hole, an elliptical hole, a triangular hole, a trapezoidal hole, or a rectangular shape. hole.
3、 如权利要求 2所述的 ITO通孔电容触摸屏， 其特征是： 所述 ITO电极层厚度为 50~2000埃米； 第一绝缘层的厚度为 0.5~3um; 所 述的 ITO通孔电极厚度为 50埃米 ~2000埃米； 金属电极层的厚度为 500-4000埃米； 第二绝缘层厚度为 0.5~3um。 The ITO through-hole capacitive touch screen of claim 2, wherein: the ITO electrode layer has a thickness of 50 to 2000 angstroms; the first insulating layer has a thickness of 0.5 to 3 um ; and the ITO via electrode The thickness is 50 angstroms to 2000 angstroms; the thickness of the metal electrode layer is 500-4000 angstroms; and the thickness of the second insulating layer is 0.5-3 um.
4、 如权利要求 3所述的 ITO通孔电容触摸屏， 其特征是： 所述的金属镀膜的金属膜层为 MoNb, AlNd, MoNb堆积而成的 三明治结构， 厚度按 50埃米 ~500埃米: 500埃米 ~3000埃米: 50埃米 -500埃米比例搭配， 其中 MoNb合金材料中 Mo和 Nb质量比为 85-95： 5-15, AlNd合金材料中 A1和 Nd质量比为 95~98： 2-5  4. The ITO through-hole capacitive touch screen according to claim 3, wherein: the metallized metal film layer is a sandwich structure of MoNb, AlNd, MoNb, and has a thickness of 50 angstroms to 500 angstroms. : 500 angstroms to 3000 angstroms: 50 angstroms to 500 angstroms, the mass ratio of Mo and Nb in MoNb alloy material is 85-95: 5-15, and the mass ratio of A1 and Nd in AlNd alloy material is 95~ 98: 2-5
5、 如权利要求 4所述的 ITO通孔电容触摸屏， 其特征是： 所述 的 ITO包括 In203和 Sn02， 其质量比为 85~95： 5~15。  The ITO through-hole capacitive touch screen according to claim 4, wherein the ITO comprises In203 and Sn02, and the mass ratio is 85~95: 5~15.
6、 一种制备 ITO通孔电容触摸屏的方法， 包括步骤：  6. A method of preparing an ITO through-hole capacitive touch screen, comprising the steps of:
ITO电极的形成：  Formation of ITO electrodes:
电容功能基板玻璃进行化学强化，再经过 ITO镀膜，使在电容功 能基板上形成一层透明及厚度均匀的 ITO膜层， 其厚度为 50 埃米 -2000埃米；  The capacitor functional substrate glass is chemically strengthened, and then subjected to ITO coating to form a transparent and uniform thickness ITO film layer on the capacitor functional substrate, and has a thickness of 50 angstroms to 2000 angstroms;
经过 ITO镀膜的透明基板， 在其 ITO表面涂布一层厚度均匀的 正性光阻材料， 光阻涂布厚度为 lum~5um; The ITO-coated transparent substrate is coated with a uniform thickness on the ITO surface. Positive photoresist material, photoresist coating thickness is lum~5um;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50-2000埃米及规则 ITO图案或电极；  After pre-baking, exposing, developing, etching, and removing the photoresist film, a thickness of 50-2000 angstroms and a regular ITO pattern or electrode are finally formed;
所述的 ITO 电极包括电容屏驱动和感应电极， 具有规则图形结 构； ITO电极 1与 ITO电极 2在同一层面， 相互独立， 相互绝缘， 垂 直设计；  The ITO electrode comprises a capacitive screen driving and sensing electrode having a regular pattern structure; the ITO electrode 1 and the ITO electrode 2 are on the same level, independent of each other, insulated from each other, and vertically designed;
第一绝缘层的形成：  Formation of the first insulating layer:
经过 ITO电极后的透明基板， 在其 ITO膜面涂布一层厚度均匀 的负性光阻材料， 光阻涂布厚度为 0.5um~3um;  The transparent substrate after the ITO electrode is coated with a uniform thickness of the negative photoresist material on the surface of the ITO film, and the photoresist coating thickness is 0.5 um~3 um;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3um和规则的 绝缘层图案；  Pre-baked, exposed, and developed by photoresist, and finally formed a pattern of insulation layer with a thickness of 0.5~3um and regular;
ITO通孔电极的形成：  Formation of ITO via electrodes:
形成第一绝缘层的透明基板，再次经过 ITO镀膜，使在玻璃基板 上形成一层透明及厚度均匀的 ITO膜层， 其厚度为 50埃米 ~2000埃 米；  Forming a transparent substrate of the first insulating layer, and again performing ITO coating to form a transparent and uniform thickness ITO film layer on the glass substrate, the thickness of which is 50 angstroms to 2000 angstroms;
经过 ITO镀膜的透明基板， 在其 ITO表面涂布一层厚度均匀的 正性光阻材料， 光阻涂布厚度为 lum~5um;  The ITO coated transparent substrate is coated with a uniform thickness of a positive photoresist material on the surface of the ITO, and the photoresist coating thickness is lum~5um;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 50-2000埃米及规则 ITO图案或电极；  After pre-baking, exposing, developing, etching, and removing the photoresist film, a thickness of 50-2000 angstroms and a regular ITO pattern or electrode are finally formed;
金属电极层的形成：  Formation of the metal electrode layer:
形成 ITO电极层的透明基板，经过金属镀膜，使之在透明基板上 形成一层厚度均匀的金属膜层， 其厚度为 500埃米 ~4000埃米； 经过金属镀膜的透明基板，在其金属表面涂布一层厚度均匀的正 性光阻材料， 光阻涂布厚度为 lum~5um;  The transparent substrate forming the ITO electrode layer is subjected to metal plating to form a uniform thickness metal film layer on the transparent substrate, and has a thickness of 500 angstroms to 4000 angstroms; the metal coated transparent substrate is on the metal surface thereof Applying a uniform thickness of positive photoresist material, the photoresist coating thickness is lum~5um;
经过光阻预烤， 曝光， 显影， 蚀刻， 脱光阻膜， 最终形成厚度为 500-4000埃米及规则金属图案或电极；  Pre-baked, exposed, developed, etched, and stripped with photoresist to form a thickness of 500-4000 angstroms and a regular metal pattern or electrode;
第二绝缘层的形成： 经过金属电极后的透明基板，在其金属膜面涂布一层厚度均匀的 负性光阻材料， 光阻涂布厚度为 0.5um~3um; Formation of the second insulating layer: The transparent substrate after the metal electrode is coated on the surface of the metal film with a uniform thickness of the negative photoresist material, and the thickness of the photoresist coating is 0.5 um~3 um;
经过光阻预烤， 曝光， 显影， 最终形成厚度为 0.5~3um和规则的 绝缘层图案。  The photoresist is pre-baked, exposed, developed, and finally formed into a thickness of 0.5 to 3 um and a regular insulating layer pattern.
7、 如权利要求 6所述的制备 ITO通孔电容触摸屏的方法， 其特 征是：所述的电容功能基板为厚度在 0.33~0.7毫米的化学强化玻璃基 板； 所述的 ITO包括 In203和 Sn02， 其质量比为 85~95： 5~15。  7. The method according to claim 6, wherein the capacitive functional substrate is a chemically strengthened glass substrate having a thickness of 0.33 to 0.7 mm; and the ITO comprises In203 and Sn02. Its mass ratio is 85~95: 5~15.
8、 如权利要求 7所述的制备 ITO通孔电容触摸屏的方法， 其特征是：  8. The method of preparing an ITO through-hole capacitive touch screen according to claim 7, wherein:
所述的正性光阻材料主成分为乙酸丙二醇单甲基醚酯，环氧树脂 及正性感光剂； 负性光阻材料主成分为乙酸丙二醇单甲基醚酯， 亚克 力树脂， 环氧树脂及负性感光剂。  The main component of the positive photoresist material is propylene glycol monomethyl ether acetate, epoxy resin and positive photosensitive agent; the main component of the negative photoresist material is propylene glycol monomethyl ether acetate, acrylic resin, epoxy resin And negative photosensitizers.
9、 如权利要求 8所述的制备 ITO通孔电容触摸屏的方法， 其 特征是：  9. The method of preparing an ITO through-hole capacitive touch screen according to claim 8, wherein:
所述的金属镀膜的金属膜层为 MoNb, AlNd, MoNb堆积而成的 三明治结构， 厚度按 50埃米 ~500埃米: 500埃米 ~3000埃米: 50埃米 -500埃米比例搭配， 其中 MoNb合金材料中 Mo和 Nb质量比为 85-95： 5-15, AlNd合金材料中 A1和 Nd质量比为 95~98： 2-5 The metal film layer of the metal coating is a sandwich structure formed by stacking MoNb, AlNd and MoNb, and the thickness is in the range of 50 angstroms to 500 angstroms: 500 angstroms to 3,000 angstroms: 50 angstroms to 500 angstroms. Among them, the mass ratio of Mo and Nb in MoNb alloy material is 85-95: 5-15, and the mass ratio of A1 and Nd in AlNd alloy material is 95~98: 2-5
10、 如权利要求 9所述的制备 ITO通孔电容触摸屏的方法， 其特征是：所述的 ITO镀膜的方式为真空磁控溅镀，或者为化学气相 沉积法， 或者为热蒸镀， 或者为溶胶凝胶。 The method for preparing an ITO through-hole capacitive touch screen according to claim 9, wherein the ITO coating is performed by vacuum magnetron sputtering, or by chemical vapor deposition, or by thermal evaporation, or For sol gel.
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