CN102253781B - Metal-bridge integrated capacitive touch screen and manufacturing method - Google Patents
Metal-bridge integrated capacitive touch screen and manufacturing method Download PDFInfo
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- CN102253781B CN102253781B CN2011102345525A CN201110234552A CN102253781B CN 102253781 B CN102253781 B CN 102253781B CN 2011102345525 A CN2011102345525 A CN 2011102345525A CN 201110234552 A CN201110234552 A CN 201110234552A CN 102253781 B CN102253781 B CN 102253781B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
Abstract
The invention discloses a metal-bridge integrated capacitive touch screen and a manufacturing method. The metal-bridge integrated capacitive touch screen comprises a transparent substrate, as well as a black resin layer, an ITO (Indium Tin Oxide) electrode, a first insulation layer, a metal electrode and a metal bridge and a second insulation layer which are sequentially laminated on the transparent substrate; the ITO electrode comprises a capacitive screen driving electrode and a capacitive screen sensing electrode and has a regular graphic structure; the capacitive screen driving electrode and the capacitive screen sensing electrode are located on the same layer and are mutually independent, isolated and vertical in design; and the transparent substrate comprises a window area and a non-window area, and the black resin layer is distributed on the non-window area of a display screen. In the invention, by the reasonable design of the lamination structure of the capacitive touch screenand the bridging conducting manner, the reliability, the working stability and the touch sensitivity of the capacitive touch screen are effectively improved.
Description
Technical field
The present invention relates to the capacitance touch screen technical field, especially relate to a kind of integral type capacitance touch screen and manufacture method thereof of passing a bridge and designing by metal.
Background technology
Along with the development of electronics technology, the keyboard of mobile phone, digital camera, handheld device, vehicle-carrying DVD, MP3, instrument etc. or mouse are touched gradually to shield and substitute at present.The product of touch-screen is not very burning hot several years ago, and more and more for the contact of touch screen product along with people, is approved that speed of development was accelerated gradually in nearly 2 years by more people yet.Touch-screen is grown up rapidly, has not only evoked fiercer industry competition, has also promoted the development of technology indirectly, and the mode of operation of its multi-point touch has risen to a new height to the influence power of touch-screen product especially, is also paid close attention to by people gradually.
Touch-screen is mainly formed by touching detection part and touch screen controller, touches detection part and is installed in the indicator screen front, for detection of user touch location, send touch screen controller after the reception; And the main effect of touch screen controller is to receive touch information from touch point detection device, and converts it to contact coordinate, gives CPU again, and its can receive simultaneously the order that CPU sends and be carried out.
Medium according to the principle of work of touch-screen and transmission information, touch-screen can be divided into four kinds, be respectively resistance-type, capacitor induction type, infrared-type and surface acoustic wave type, current what be widely used is resistive touch screen, and it utilizes pressure sensitive to carry out resistance control; Resistive touch screen is a kind of laminated film of multilayer, and its major part is a resistance film screen that cooperates very much with display surface.Resistance film screen is as basic unit with one deck glass or duroplasts flat board, the surface scribbles layer of transparent oxidized metal (transparent conductive resistance) ITO (tin indium oxide) conductive layer, be stamped the smooth anti-friction plastic layer of one deck outside surface cure process above again, its inside surface also scribbles one deck ITO coating, between them, there is the transparent isolating points of many tiny (less than 1/1000 inches) that two conductive layers is separated insulation, when the finger touch screen, two conductive layers has just had contact in the position, touch point, resistance changes, produce signal at X and Y both direction, send touch screen controller then, controller detects this contact and calculates (X, Y) position, the mode according to analog mouse operates again.
The ultimate principle of capacitive touch screen is to utilize the electric current induction of human body to carry out work; capacitive touch screen is two layers of compound glass screen; the inside surface interlayer of glass screen scribbles ITO (tin indium oxide) conducting film (plated film electro-conductive glass); outermost layer is skim silicon soil glassivation; the ITO coating is as workplace; draw four electrodes on four angles; when finger touch is on screen; because people's bulk electric field; user and touch screen surface form a coupling capacitance; for high-frequency current, electric capacity is direct conductor, so finger siphons away a very little electric current from contact point; this electric current flows out the electrode from four jiaos of touch-screen respectively; and the electric current of these four electrodes of flowing through is directly proportional with the distance of finger to four jiaos, and controller draws touch point position by the accurate Calculation to these four current ratios.
In capacitive touch screen, projection-type capacitive touch screen is that current application is a kind of comparatively widely, has characteristics such as simple in structure, transmittance height.The touch sensible parts of projection-type capacitive touch screen are generally a plurality of column electrodes and the row electrode is staggered to form the induction matrix.Usually the design that adopts comprises the two sides that column electrode and row electrode is separately positioned on same transparency carrier, prevents from short circuit occurring at intervening portion; Perhaps column electrode and row electrode are arranged on the homonymy of same transparency carrier, be formed on the same conducting film (being generally the ITO conducting film), separate by the mode that insulation course and frame conducting bridge are set at column electrode and the staggered position of row electrode, column electrode and row electrode are separated and guarantee conducting on direction separately, can prevent effectively that it is in the intervening portion short circuit.
Usually the design proposal that adopts is: one of column electrode or row electrode arrange on conducting film continuously, then another electrode electrode with continuous setting on conducting film serves as to be arranged to some electrode blocks at interval, position at cross-point is electrically connected adjacent electrode block by conducting bridge, thereby forms the continuous electrode on the other direction; Separated by insulation course between the electrode of conducting bridge and setting continuously, thereby effectively stop column electrode and row electrode in the cross-point short circuit.Usually the design proposal that adopts is: (1) stepped construction is followed successively by transparency carrier, first direction electrode, insulation course, conducting bridge; Perhaps (2) stepped construction is followed successively by transparency carrier, conducting bridge, insulation course, first direction electrode.
But can there be the defective of the not high and poor work stability of transmittance in the capacitive touch screen that adopts traditional design proposal, the capacitive touch screen transmittance of traditional design proposal is difficult to break through 80%, and during whole stressed flexural deformation, occur at the interface easily separating, cause electrode to open circuit and touch inefficacy, touch sensible parts damages.
Summary of the invention
One of purpose of the present invention is to provide a kind of metal gap bridge integral type capacitance touch screen, reasonably design by stepped construction and metal bridge formation conduction mode to capacitance touch screen, effectively improve reliability, job stability and the touch sensitivity of capacitive touch screen.
For achieving the above object, the present invention adopts following technical scheme:
A kind of metal gap bridge integral type capacitance touch screen comprises transparency carrier, and the black resin layer, ITO electrode, first insulation course, metal electrode and the metal that stack gradually in transparency carrier are passed a bridge and second insulation course; Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen.
The metallic diaphragm of metal coating is MoNb, AlNd, MoNb piles up the sandwich structure that forms, thickness is in 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides～3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85～95 in the MoNb alloy material: Al and Nd mass ratio are 95～98: 2～5 in 5～15, the AlNd alloy material.The metal material type selecting also can be made up of silver alloy or aldary, and composition combines by a certain percentage.The metallic diaphragm plated film is the vacuum magnetic control sputter.
Preferably:
The chemically reinforced glass substrate that described transparency carrier is thickness between 0.5～2.0 millimeter of thickness; Described ITO electrode regular texture is rhombus, or bar shaped, or box-shaped, or snowflake type, or cross figures.
The black resin zone is trapezium structure, interior thickness is 0.3um～5um, its bevel angle is that angle is mild between 6～60 degree, and purpose is that ITO electrode (drive wire ITO electrode 1 and line of induction ITO electrode 2) can be owing to difference in thickness causes the ITO lead rupture greatly during by the slope.Described black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of products such as metal wire below.Metal electrode and metal are passed a bridge, and make the ITO electrode signal be conducting to the fixed zone of flexible circuit board nation, and metal is passed a bridge and is the conducting function, make a certain direction of ITO electrode by the metal conducting of passing a bridge, and have the regular figure structure.First insulation course makes a certain direction electrode of ITO and metal cross bridge electrode to be in insulation status, not conducting mutually.Second dielectric protection layer protection metal electrode and metal are crossed bridge electrode, make it and air insulation.
Two of purpose of the present invention is to provide a kind of manufacture method of metal gap bridge integral type capacitance touch screen, adopts following technical scheme:
The formation of black resin layer: black resin is uniformly coated on the transparency carrier through rotation coating method or the formula coating method of scraping, and coating thickness is 0.3um～5um, and is roasting in advance through well heater, and exposure is developed, and makes it to form required black resin zone; The black resin zone is trapezium structure, interior thickness is 0.3um～5um, its bevel angle is that angle is mild between 6～60 degree, and purpose is that ITO electrode (drive wire ITO electrode 1 and line of induction ITO electrode 2) can be owing to difference in thickness causes the ITO lead rupture greatly during by the slope.The black resin zone is the non-viewfinder area of display screen, and purpose is for blocking metal electrode; Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: the acrylic resin; epoxy resin; the negative photosensitive agent; acetic acid propylene glycol monomethyl ether ester and black pigment, concrete ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15～30: 60～80: 1～10.
The formation of ITO electrode layer:
Form the transparency carrier of black resin layer, through the ITO plated film, make at glass substrate and form layer of transparent and the uniform ITO rete of thickness, its thickness is 50A～2000A (surface resistance is 10～430 ohm);
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface coating one layer thickness, the photoresistance coating thickness is 1um～5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50～2000A (surface resistance is 10～430 ohm) and regular ITO pattern or electrode;
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design;
1 conducting of ITO electrode is to cross bridge electrode by metal to overlap up and down, and metal is crossed the bottom of bridge electrode by first insulation course to the climbing of top, again from the top of first insulation course to the decline of bottom, connect ITO electrode 1, make ITO electrode 1 form and drive path; The conducting of ITO electrode 2 is that self ITO communicates, and makes ITO electrode 2 form the induction paths.
The formation of first insulation course:
Transparency carrier through behind the ITO electrode is coated with the uniform negativity photoresist of a layer thickness at its ITO face, and the photoresistance coating thickness is 0.5um～3um;
Roasting in advance through photoresistance, exposure is developed, and finally forming thickness is the insulating layer pattern (as rectangle, square, rhombus, patterns such as ellipse) of 0.5～3um and rule;
The formation that metal electrode layer and metal are passed a bridge:
Form the transparency carrier of first insulation course, through metal coating, make it to form the uniform metallic diaphragm of a layer thickness at transparency carrier, its thickness is 500A～4000A;
Transparency carrier through metal coating is coated with the uniform positivity photoresist of a layer thickness in its metal surface, the photoresistance coating thickness is 1um～5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 500～4000A and regular metal pattern (as rectangle, square, rhombus, patterns such as ellipse) or electrode;
The metallic diaphragm of metal coating is MoNb, AlNd, MoNb piles up the sandwich structure that forms, thickness is in 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides～3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85～95 in the MoNb alloy material: Al and Nd mass ratio are 95～98: 2～5 in 5～15, the AlNd alloy material.。The metal material type selecting also can be made up of silver alloy or aldary, and composition combines by a certain percentage.The metallic diaphragm plated film is the vacuum magnetic control sputter.
The formation of second insulation course:
Transparency carrier through behind the metal electrode is coated with the uniform negativity photoresist of a layer thickness at its metal face, and the photoresistance coating thickness is 0.5um～3um;
Roasting in advance through photoresistance, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5～3um and rule.
Preferably: described transparency carrier is the chemically reinforced glass substrate of thickness between 0.5mm～2.0mm;
Described ITO is made up of In2O3 and SnO2, and its mass ratio is 85～95: 5～15.The mode of ITO plated film can adopt the vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Described positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion (TR400 that commodity Taiwan new Ying Cai company by name produces); Negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, the acrylic resin, and epoxy resin and negative photosensitive agent (commodity Taiwan Da Xing company by name produces POC A46) coating photoresist mode has roller coating, spin coating, modes such as blade coating.
The present invention compared with prior art has following advantage and beneficial effect:
The present invention is by reasonably arranging stepped construction, finish touch function signal electrode and black resin overlayer at the layer of transparent substrate, optimize the mode of order such as laminated metal gap bridge electrode layer and pattern, significantly promoted the yield of product, reduce cost, promote product reliability.Between substrate thickness 0.5mm～2.0mm, has thin thickness among the present invention, advantage such as quality is light; By the appropriate design to each layer, make product reliability stable, product yield height.
Description of drawings
Fig. 1 is the structural representation of metal gap bridge capacitance touch screen of the present invention;
Fig. 2 is the described glass substrate structural representation of the embodiment of the invention;
Fig. 3 is the metal local structure for amplifying synoptic diagram of passing a bridge;
Fig. 4 is metal gap bridge cross-sectional view;
Fig. 5 is the cross-sectional view of metal gap bridge electric capacity integral type touch-screen of the present invention.
Embodiment
Below in conjunction with specific embodiment the present invention is described in further detail.
As shown in Figures 1 and 2, described metal gap bridge capacitance touch screen, comprise the chemically reinforced glass substrate 11 of thickness between 0.5mm～2.0mm, stack gradually black resin layer 12, ITO electrode 13, first insulation course 14, metal electrode and metal gap bridge 15 and second insulation course 16 in transparency carrier; Described ITO electrode comprises that capacitance plate drives and induction electrode, has the regular figure structure; Capacitance plate driving and induction electrode are in same aspect, and be separate, mutually insulated, vertical design.Transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen.
Black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of products such as metal wire below.
Fig. 3 is to the partial structurtes enlarged diagram or the cross-sectional view that Figure 5 shows that the described ITO gap bridge of present embodiment capacitance touch screen: ITO electrode 13 comprises drive wire (ITO electrode 1) 42 and the line of induction (ITO electrode 2) 43; Metal electrode and metal pass a bridge 46, make the ITO electrode signal be conducting to the flexible circuit board zone, and metal is passed a bridge and is the conducting function, make a certain direction of ITO electrode by the metal conducting of passing a bridge, and have the regular figure structure.First insulation course 45 makes a certain direction electrode of ITO and metal cross bridge electrode to be in insulation status, not conducting mutually.Second insulation course, 44 protection protection metal electrodes and metal are crossed bridge electrode 46, make it and air insulation.
Its preparation technology is as follows:
The formation of black resin layer: black resin is uniformly coated on the transparency carrier through rotation coating method or the formula coating method of scraping, and coating thickness is 0.3um～5um, and is roasting in advance through well heater, and exposure is developed, and makes it to form required black resin zone;
Black resin is uniformly coated on the transparent glass substrate 41 (11) through rotation coating method or the formula coating method of scraping, and coating thickness is 0.3um～5um, and is roasting in advance through well heater, and exposure is developed, and makes it to form required black resin zone; The black resin zone is trapezium structure, interior thickness is 0.3um～5um, its bevel angle is that angle is mild between 6～60 degree, and purpose is that ITO electrode (drive wire ITO electrode 1 and line of induction ITO electrode 2) can be owing to difference in thickness causes the ITO lead rupture greatly during by the slope.The black resin zone is the non-viewfinder area of display screen, and purpose is for blocking metal electrode; Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: the acrylic resin; epoxy resin; the negative photosensitive agent; acetic acid propylene glycol monomethyl ether ester and black pigment, concrete ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15～30: 60～80: 1～10.
Pre-roasting temperature and time scope is: 60 degree～150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20～40 degree constant temperature operations.It is roasting firmly to pass through black resin layer again, condition be 200 degree to 300 degree, the time is half an hour to 3 hour, through behind the above-mentioned processing procedure, finally forming thickness is 0.3um～5um, the black resin layer 51 of figure rule.
The formation of ITO electrode layer:
Form the transparency carrier of black resin layer, through the ITO plated film, make at glass substrate and form layer of transparent and the uniform ITO rete of thickness, its thickness is 50～2000 Ethylmercurichlorendimides (surface resistance is 10～430 ohm); The ITO material is made up of In2O3 and SnO2, and its mass ratio is 85～95: 5～15.The mode of ITO plated film has the vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Through the glass substrate of ITO plated film, at the uniform positivity photoresist of its ITO surface coating one layer thickness, positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and photosensitive material; The photoresistance coating thickness is 1um～5um.Coating photoresist mode has roller coating, spin coating, modes such as blade coating.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50～2000 Ethylmercurichlorendimides (surface resistance is 10～430 ohm) and regular ITO pattern or electrode.Pre-roasting temperature and time scope is: 60 degree～150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20～40 degree constant temperature operations.The soup that the ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage drops between 1～3 its sour pH value, etch temperature operation between 40～50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%: 30%, the operation between 40～80 degree of demoulding temperature.
Described ITO electrode comprises that capacitance plate drives (ITO electrode 1) and induction electrode (ITO electrode 2), has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design.
1 conducting of ITO electrode is to cross bridge electrode by metal to overlap up and down, and metal is crossed the bottom of bridge electrode by first insulation course to the climbing of top, again from the top of first insulation course to the decline of bottom, connect ITO electrode 1, make ITO electrode 1 form and drive path; The conducting of ITO electrode 2 is that self ITO communicates, and makes ITO electrode 2 form the induction paths.
The formation of first insulation course:
Through the transparency carrier behind the ITO electrode, be coated with the uniform negativity photoresist of a layer thickness at its ITO face, negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, the acrylic resin, epoxy resin and negative photosensitive agent, photoresistance coating thickness are 0.5um～3um; Coating negativity photoresist mode has spin coating, modes such as blade coating.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5～3um and rule.Pre-roasting temperature and time scope is: 60 degree～150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20～40 degree constant temperature operations.It is roasting firmly to pass through insulation course again, condition be 200 degree to 300 degree, the time is half an hour to 3 hour, through behind the above-mentioned processing procedure, finally forming thickness is 0.5um～3um, the insulation course of figure rule.
The formation that metal electrode layer and metal are passed a bridge:
Form the transparency carrier of insulation course, pass through metal coating again, make at glass substrate and form the uniform metallic diaphragm of a layer thickness, its thickness is 500 Ethylmercurichlorendimides～4000 Ethylmercurichlorendimides.The metallic diaphragm material is MoNb, AlNd, MoNb piles up the sandwich structure that forms, thickness is in 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides～3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85～95 in the MoNb alloy material: Al and Nd mass ratio are 95～98: 2～5 in 5～15, the AlNd alloy material.The metal material type selecting also can be made up of silver alloy or aldary, and composition combines by a certain percentage.Metal coating is the vacuum magnetic control sputter.
Glass substrate through metal coating is coated with the uniform positivity photoresist of a layer thickness in its metal surface, the photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin, positivity emulsion.The photoresistance coating thickness is 1um～5um.Coating photoresist mode has roller coating, spin coating, modes such as blade coating.Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 500～4000A and regular metal pattern or electrode.Pre-roasting temperature and time scope is: 60 degree～150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20～40 degree constant temperature operations.The soup that metal etch liquid adopts phosphoric acid, acetic acid and nitric acid to mix by a certain percentage, etch temperature operation between 40～50 degree.Take off photoresistance film liquid and adopt dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, number percent is 70%: 30%, the operation between 40～80 degree of demoulding temperature.
The formation of second insulation course:
Glass substrate through behind the metal electrode is coated with the uniform negativity photoresist of a layer thickness at its metal face, and negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent; The photoresistance coating thickness is 0.5um～3um.Coating negativity photoresist mode has spin coating, modes such as blade coating.
Roasting in advance through photoresistance through product after the above-mentioned processing procedure, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5～3um and rule.Pre-roasting temperature and time scope is: 60 degree～150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20～40 degree constant temperature operations.It is roasting firmly to pass through insulation course again, condition be 200 degree to 300 degree, the time is 0.5 hour to 3 hours, through behind the above-mentioned processing procedure, finally forming thickness is 0.5um～3um, second insulation course of figure rule.
Above content be in conjunction with concrete preferred implementation to further describing that the present invention does, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (9)
1. a metal gap bridge integral type capacitance touch screen comprises transparency carrier, and the black resin layer, ITO electrode, first insulation course, metal electrode and the metal that stack gradually in transparency carrier are passed a bridge and second insulation course; Described ITO electrode comprises that capacitance plate drives and induction electrode, has the regular figure structure; Capacitance plate driving and induction electrode are in same aspect, and be separate, mutually insulated, vertical design; Described transparency carrier comprises viewfinder area and non-viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; Metal electrode layer makes the uniform metallic diaphragm of a layer thickness that forms at transparency carrier for passing through metal coating again at the transparency carrier that forms insulation course, and its thickness is 500 Ethylmercurichlorendimides～4000 Ethylmercurichlorendimides; Described metallic diaphragm is MoNb, AlNd, MoNb piles up the sandwich structure that forms, three's thickness is in 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides～3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85～95:5～15 in the MoNb alloy material, and Al and Nd mass ratio are 95～98:2～5 in the AlNd alloy material.
2. metal gap bridge integral type capacitance touch screen as claimed in claim 1, it is characterized in that: described transparency carrier is that thickness is at the chemically reinforced glass substrate of 0.5mm～2.0mm; Described ITO electrode regular texture is rhombus, or bar shaped, or box-shaped, or cross.
3. metal gap bridge integral type capacitance touch screen as claimed in claim 2, it is characterized in that: described black resin layer thickness is 0.3um～5um; The ITO electrode layers thickness is that the thickness of 50～2000 Ethylmercurichlorendimides is 0.5～3um; Metal electrode and metal gap bridge thickness are 500 Ethylmercurichlorendimides～4000 Ethylmercurichlorendimides; Second thickness of insulating layer is 0.5～3um.
4. metal gap bridge integral type capacitance touch screen as claimed in claim 3 is characterized in that:
Described ITO comprises In2O3 and SnO2, and its mass ratio is 85～95:5～15.
5. method for preparing metal gap bridge integral type capacitance touch screen comprises step:
The formation of black resin layer: black resin is uniformly coated on the transparency carrier through rotation coating method or the formula coating method of scraping, and coating thickness is 0.3um～5um, and is roasting in advance through well heater, and exposure is developed, and makes it to form required black resin zone;
Described black resin is photonasty protective seam photoresist, and described photoresist comprises the acrylic resin, epoxy resin, negative photosensitive agent, acetic acid propylene glycol monomethyl ether ester and black pigment; Its ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15～30:60～80:1～10;
The formation of ITO electrode layer:
Form the transparency carrier of black resin layer, through the ITO plated film, make at glass substrate and form layer of transparent and the uniform ITO rete of thickness, its thickness is 50～2000 Ethylmercurichlorendimides;
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface coating one layer thickness, the photoresistance coating thickness is 1um～5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 50～2000A and regular ITO pattern or electrode;
Described ITO electrode comprises ITO electrode 1ITO electrode 2, has the regular figure structure; ITO electrode 1 and ITO electrode 2 are in same aspect, and be separate, mutually insulated, vertical design;
The formation of first insulation course:
The process metal is crossed the transparency carrier behind the bridge electrode, is coated with the uniform negativity photoresist of a layer thickness at its ITO face, and the photoresistance coating thickness is 0.5um～3um;
Roasting in advance through photoresistance, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5～3um and rule;
The formation that metal electrode layer and metal are passed a bridge:
Form the transparency carrier of insulation course, through metal coating, make it to form the uniform metallic diaphragm of a layer thickness at transparency carrier, its thickness is 500～4000 Ethylmercurichlorendimides;
Transparency carrier through metal coating is coated with the uniform positivity photoresist of a layer thickness in its metal surface, the photoresistance coating thickness is 1um～5um;
Roasting in advance through photoresistance, exposure is developed, and the photoresistance film is taken off in etching, and finally forming thickness is 500～4000 Ethylmercurichlorendimides and regular metal pattern or electrode;
The formation of second insulation course:
Transparency carrier through behind the metal electrode is coated with the uniform negativity photoresist of a layer thickness at its metal face, and the photoresistance coating thickness is 0.5um～3um;
Roasting in advance through photoresistance, exposure is developed, and finally forming thickness is the insulating layer pattern of 0.5～3um and rule.
6. the method for preparing metal gap bridge integral type capacitance touch screen as claimed in claim 5 is characterized in that: described transparency carrier is thickness at 0.5～2.0 millimeter chemically reinforced glass substrate; Described ITO comprises In2O3 and SnO2, and its mass ratio is 85～95:5～15.
7. the method for preparing metal gap bridge integral type capacitance touch screen as claimed in claim 6 is characterized in that:
Described positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion; Negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent.
8. the method for preparing metal gap bridge integral type capacitance touch screen as claimed in claim 7 is characterized in that:
The metallic diaphragm of described metal coating is MoNb, AlNd, MoNb piles up the sandwich structure that forms, its thickness is in 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimides: 500 Ethylmercurichlorendimides～3000 Ethylmercurichlorendimides: 50 Ethylmercurichlorendimides～500 Ethylmercurichlorendimide ratios collocation, wherein Mo and Nb mass ratio are 85～95:5～15 in the MoNb alloy material, and Al and Nd mass ratio are 95～98:2～5 in the AlNd alloy material.
9. the method for preparing metal gap bridge integral type capacitance touch screen as claimed in claim 8, it is characterized in that: the mode of described ITO plated film is the vacuum magnetic control sputter, perhaps is chemical vapour deposition technique, perhaps is hot evaporation, perhaps is collosol and gel.
Priority Applications (2)
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| CN2011102345525A CN102253781B (en) | 2011-08-16 | 2011-08-16 | Metal-bridge integrated capacitive touch screen and manufacturing method |
| PCT/CN2012/077335 WO2013023489A1 (en) | 2011-08-16 | 2012-06-21 | Metal crossover single-body capacitive touch screen and manufacturing method |
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| CN102629176A (en) * | 2012-03-27 | 2012-08-08 | 深圳市宝明科技股份有限公司 | Novel metal bridge integrated capacitive touch screen and manufacture method thereof |
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| TWI515617B (en) * | 2013-08-07 | 2016-01-01 | 達鴻先進科技股份有限公司 | Touch panel structure and method for forming the same |
| KR101481567B1 (en) * | 2013-10-17 | 2015-01-15 | 일진디스플레이(주) | Touch screen panel and method of manufacturing the same |
| CN104965626A (en) * | 2014-03-28 | 2015-10-07 | 深圳市比亚迪电子部品件有限公司 | Capacitive touch screen and method for forming same |
| US10824285B2 (en) * | 2018-02-06 | 2020-11-03 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Electrode structure and method for manufacturing the same |
| CN108491114B (en) * | 2018-03-12 | 2021-04-30 | 武汉华星光电半导体显示技术有限公司 | Touch panel, touch panel preparation method and touch device |
| CN108803924B (en) * | 2018-05-23 | 2021-06-22 | 业成科技（成都）有限公司 | Single-layer type induction electrode and manufacturing method thereof |
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