CN102541383B - Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method for non-lapping integrated capacitive touch screen - Google Patents
Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method for non-lapping integrated capacitive touch screen Download PDFInfo
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- CN102541383B CN102541383B CN201210028557.7A CN201210028557A CN102541383B CN 102541383 B CN102541383 B CN 102541383B CN 201210028557 A CN201210028557 A CN 201210028557A CN 102541383 B CN102541383 B CN 102541383B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The invention discloses a non-lapping integrated capacitive touch screen without a metal electrode layer and a manufacturing method for non-lapping integrated capacitive touch screen. The non-lapping integrated capacitive touch screen without the metal electrode layer comprises a transparent substrate, a black resin layer, an indium-tin-oxide (ITO) electrode and an insulating layer, wherein the black resin layer, the ITO electrode and the insulating layer are laminated on the transparent substrate in turn; the ITO electrode is a horizontal or vertical conduction electrode, and has a regular graphic structure; the ITO electrode consists of an ITO conduction electrode 1 and an ITO conduction electrode 2, and the ITO conduction electrode 1 and the ITO conduction electrode 2 are arranged on the same layer surface, and are independent of each other, insulated with each other and designed in a staggered mode; and the transparent substrate comprises a window area and a non-window area, and the black resin layer is distributed in the non-window area of a display screen. According to the invention, the conduction mode of a laminated structure of the capacitive touch screen is reasonably designed, so that the production cost is effectively reduced, and the reliability and the working stability of the capacitive touch screen are effectively improved.
Description
Technical field
The present invention relates to capacitance touch screen technical field, especially relate to a kind of non-overlapping integrated capacitive touch screen and manufacture method thereof without metal electrode layer.
Background technology
Along with the development of electronics technology, the keyboard of mobile phone, digital camera, handheld device, vehicle-carrying DVD, MP3, instrument etc. or mouse are touched gradually to shield and substitute at present.The product of touch-screen is not very burning hot several years ago, and more and more for the contact of touch screen product along with people, within nearly 2 years, by more people, is approved yet, speed of development is accelerated gradually.Touch-screen is grown up rapidly, has not only evoked fiercer industry competition, has also indirectly promoted the development of technology, and the mode of operation of its multi-point touch has risen to a new height the influence power of touch-screen product especially, also by people, is paid close attention to gradually.
Touch-screen mainly forms by touching detection part and touch screen controller, touches detection part and is arranged on before indicator screen, for detection of user touch location, send touch screen controller after reception; And the Main Function of touch screen controller is to receive touch information from touch point detection device, and convert it to contact coordinate, then give CPU, its can receive the order that CPU sends simultaneously and be carried out.
According to the medium of the principle of work of touch-screen and transmission information, touch-screen can be divided into four kinds, be respectively resistance-type, capacitor induction type, infrared-type and surface acoustic wave type, current what be widely used is resistive touch screen, and it utilizes pressure sensitive to carry out resistance control; Resistive touch screen is a kind of laminated film of multilayer, and its major part is a resistance film screen coordinating very much with display surface.Resistance film screen is to using one deck glass or duroplasts flat board as basic unit, surface scribbles layer of transparent oxidized metal (transparent conductive resistance) ITO(tin indium oxide) conductive layer, be stamped again the smooth anti-friction plastic layer of one deck outside surface cure process above, its inside surface also scribbles one deck ITO coating, between them, there is the transparent isolating points of many tiny (being less than 1/1000 inch) that two conductive layers is separated to insulation, when finger touch screen, two conductive layers has just had contact in position, touch point, resistance changes, on X and Y both direction, produce signal, then send touch screen controller, controller detects this contact and calculates (X, Y) position, according to the mode of analog mouse, operate again.
The ultimate principle of capacitive touch screen is to utilize the electric current induction of human body to carry out work, capacitive touch screen is two layers of compound glass screen, the inside surface interlayer of glass screen scribbles ITO(tin indium oxide) conducting film (plated film electro-conductive glass), outermost layer is skim silicon soil glassivation, ITO coating is as workplace, on four angles, draw four electrodes, when finger touch is on screen, due to people's bulk electric field, user and touch screen surface form a coupling capacitance, for high-frequency current, electric capacity is direct conductor, so finger siphons away a very little electric current from contact point, this electric current flows out in the electrode from four jiaos of touch-screen respectively, and the electric current of these four electrodes of flowing through is directly proportional to the distance of finger to four jiaos, controller is by the accurate Calculation to these four current ratios, draw the position of touch point.
In capacitive touch screen, projection-type capacitive touch screen is that current application is a kind of comparatively widely, have simple in structure, transmittance high.The touch sensible parts of projection-type capacitive touch screen are generally a plurality of column electrodes and row electrode is staggered to form induction matrix.Conventionally the design adopting comprises the two sides that column electrode and row electrode is separately positioned on to same transparency carrier, prevents from occurring short circuit at intervening portion; Or column electrode and row electrode are arranged on to the homonymy of same transparency carrier, be formed on same conducting film (being generally ITO conducting film), at column electrode and the staggered position of row electrode, by being set, the mode of insulation course frame conducting bridge separates, column electrode and row electrode are separated and guarantee conducting in direction separately, can effectively prevent that it is in intervening portion short circuit.
Conventionally the design proposal adopting is: one of column electrode or row electrode arrange continuously on conducting film, another electrode be take the electrode arranging continuously and as interval, is arranged to some electrode blocks on conducting film, position at cross-point is electrically connected to adjacent electrode block by conducting bridge, thereby forms the continuous electrode on other direction; Between the electrode of conducting bridge and setting continuously, by insulation course, separated, thereby effectively stop column electrode and row electrode in cross-point short circuit.Conventionally the design proposal adopting is: (1) stepped construction is followed successively by transparency carrier, first direction electrode, insulation course, conducting bridge; Or (2) stepped construction is followed successively by transparency carrier, conducting bridge, insulation course, first direction electrode.
But can there is the defect of the not high and poor work stability of transmittance in the capacitive touch screen that adopts traditional design proposal, the capacitive touch screen transmittance of traditional design proposal is difficult to break through 80%, and during whole stressed flexural deformation, easily at interface, occur separated, cause electrode to open circuit and touch inefficacy, touch sensible parts damages.
Summary of the invention
One of object of the present invention is to provide a kind of non-overlapping integrated capacitive touch screen without metal electrode layer, by the stepped construction of capacitance touch screen and conduction mode are reasonably designed, effectively reduce production costs, improve the reliability of capacitive touch screen, job stability.
For achieving the above object, the present invention adopts following technical scheme:
A non-overlapping integrated capacitive touch screen without metal electrode layer, comprises transparency carrier, stacks gradually black resin layer, ITO electrode, insulation course in transparency carrier; Described ITO electrode is horizontal direction or vertical direction conduction electrode, has regular figure structure; ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, separate, mutually insulated, staggered designs; Described transparency carrier comprises He Fei viewfinder area, viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen.
Non-overlapping integrated touch screen structurally with in production technology is all simplified to some extent, has reduced and the traditional needed gap bridge of bridging type integral type capacitance plate or via process, has reduced production cost and has shortened the explained hereafter time.The achieved touch manner of non-overlapping integrated touch screen is single-point touches and gesture identification, and the achieved mode of bridging type integral type (gap bridge mode and through hole mode) is multiple point touching (more than 2) and gesture identification.
Non-overlapping integrated capacitive touch screen and non-overlapping integrated touch screen without metal electrode layer structurally with in production technology are all simplified to some extent, cancelled metal electrode, reduce material cost, reduced upper runoff yield journey, on touch function, all can realize single-point touches and gesture identification.
Without the non-overlapping integrated capacitive touch screen of metal electrode layer, due to without metal electrode, the maximum value of its ITO electric conduction pole-face resistance hinders much smaller than non-overlapping integrated touch screen ito surface.
Preferably:
Chemically reinforced glass substrate or resin material substrate that described transparency carrier is thickness between 0.5 ~ 2.0 millimeter of thickness; Described ITO electrode regular texture is triangle, or bar shaped, or oval.
Black resin region is trapezium structure, interior thickness is 0.3um ~ 5um, its bevel angle is that between 6 ~ 60 degree, angle is mild, and object is that ITO electrode (ITO conduction electrode 1 with ITO conduction electrode 2) can be because difference in thickness causes greatly ITO lead rupture during by slope.Described black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of the product belows such as wire.Dielectric protection layer protection ITO electrode makes it and air insulation.
Two of object of the present invention is to provide a kind of manufacture method of non-overlapping integrated capacitive touch screen, adopts following technical scheme:
The formation of black resin layer: black resin is uniformly coated on transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3um ~ 5um, pre-baked through well heater, exposure, develops, and makes it to form required black resin region; Black resin region is trapezium structure, interior thickness is 0.3um ~ 5um, its bevel angle is that between 6 ~ 60 degree, angle is mild, and object is that ITO electrode (ITO conduction electrode 1 with ITO conduction electrode 2) can be because difference in thickness causes greatly ITO lead rupture during by slope.Black resin region is the non-viewfinder area of display screen, and object is for blocking below visible; Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: acrylic resin; epoxy resin; negative photosensitive agent; acetic acid propylene glycol monomethyl ether ester and black pigment, concrete ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10.
The formation of ITO electrode layer:
Form the transparency carrier of black resin layer, through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on glass substrate, its thickness is 80 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 270 ohm);
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1um ~ 5um;
Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 80 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 270 ohm) and regular ITO pattern or electrode;
Described ITO electrode is horizontal direction or vertical direction conduction electrode, has regular figure structure; ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, separate, mutually insulated, staggered designs;
The formation of insulation course:
Transparency carrier after ITO electrode, at the uniform negativity photoresist of its metal face coating a layer thickness, light blockage coating thickness is 0.5um ~ 3um;
Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5 ~ 3um and regular insulating layer pattern.
Described ITO is comprised of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film can adopt vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Described positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion (TR400 that commodity Taiwan by name Xin Yingcai company produces); Negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, and epoxy resin and negative photosensitive agent (commodity Taiwan by name Da Xing company produces POC A46) coating photoresist mode has roller coating, spin coating, the modes such as blade coating.
Compared with prior art, tool has the following advantages and beneficial effect in the present invention:
The present invention, by stepped construction is reasonably arranged, completes touch function signal electrode and black resin overlayer on layer of transparent substrate, has significantly promoted the yield of product, reduces costs improving product reliability.In the present invention, between substrate thickness 0.5mm ~ 2.0mm, there is thin thickness, the advantage such as quality is light; By the appropriate design to each layer, make product reliability stable, product yield is high.
Non-overlapping integrated capacitive touch screen and non-overlapping integrated touch screen without metal electrode layer in the present invention structurally with in production technology are all simplified to some extent, cancelled metal electrode, reduced material cost, reduce upper runoff yield journey, on touch function, all can realize single-point touches and gesture identification.
Accompanying drawing explanation
Fig. 1 is the structural representation of capacitance touch screen of the present invention;
Fig. 2 is the glass basal plate structure schematic diagram described in the embodiment of the present invention;
Fig. 3 is local structure for amplifying schematic diagram;
Fig. 4 is cross-sectional view;
Fig. 5 is the cross-sectional view without the non-overlapping integrated capacitive touch screen of metal electrode layer of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail.
As shown in Figures 1 and 2, the described non-overlapping integrated capacitive touch screen capacitance touch screen without metal electrode layer, comprise chemically reinforced glass substrate or the resin material substrate 11 of thickness between 0.5mm ~ 2.0mm, stack gradually black resin layer 12, ITO electrode 13, insulation course 14 in transparency carrier; Described ITO electrode is horizontal direction or vertical direction conduction electrode, has regular figure structure; ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, separate, mutually insulated, staggered designs.Transparency carrier comprises He Fei viewfinder area, viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen.
Black resin layer can effectively block the figure layer of non-visible area, can shading, and the visible of the product belows such as metal wire.
Fig. 3 is to the partial structurtes enlarged diagram or the cross-sectional view that Figure 5 shows that capacitance touch screen described in the present embodiment: ITO electrode 13 comprises ITO conduction electrode 1 42 and ITO conduction electrode 2 43; The edge cabling of insulation course 45 protection protection ITO conduction electrodes 1 42 and ITO conduction electrode 2 43, makes it and air insulation.
Its preparation technology is as follows:
The formation of black resin layer: black resin is uniformly coated on transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3um ~ 5um, pre-baked through well heater, exposure, develops, and makes it to form required black resin region;
Black resin is uniformly coated on to transparent glass substrate 41(11 through rotary coating mode or the formula coating method of scraping) upper, coating thickness is 0.3um ~ 5um, pre-baked through well heater, exposure is developed, and makes it to form required black resin region; Black resin region is trapezium structure, interior thickness is 0.3um ~ 5um, its bevel angle is that between 6 ~ 60 degree, angle is mild, and object is that ITO electrode (ITO conduction electrode 1 and ITO conduction electrode 2) can be because difference in thickness causes greatly ITO lead rupture during by slope.Black resin region is the non-viewfinder area of display screen, and object is for blocking metal electrode; Described black resin be photonasty protective seam photoresist (commodity by Taiwan forever photochemistry produced EK410); it is a kind of black negativity photoresist; principal ingredient is: acrylic resin; epoxy resin; negative photosensitive agent; acetic acid propylene glycol monomethyl ether ester and black pigment, concrete ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15 ~ 30:60 ~ 80:1 ~ 10.
Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.Pass through again black resin layer firmly roasting, condition be 200 degree to 300 degree, the time is half an hour to 3 hour, after above-mentioned processing procedure, finally forming thickness is 0.3um ~ 5um, the black resin layer 51 of figure rule.
The formation of ITO electrode layer:
Form the transparency carrier of black resin layer, through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on substrate, its thickness is 80 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 270 ohm); ITO material is comprised of In2O3 and SnO2, and its mass ratio is 85 ~ 95:5 ~ 15.The mode of ITO plated film has vacuum magnetic control sputter, chemical vapour deposition technique, hot evaporation, collosol and gel.
Through the glass substrate of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and photosensitive material; Light blockage coating thickness is 1um ~ 5um.Coating photoresist mode has roller coating, spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after above-mentioned processing procedure, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 80 ~ 2000 Ethylmercurichlorendimides (surface resistance is 10 ~ 270 ohm) and regular ITO pattern or electrode.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.The liquid that ITO etching solution adopts hydrochloric acid and nitric acid to mix by a certain percentage, drops between 1 ~ 3 its sour pH value, etch temperature operation between 40 ~ 50 degree.De-photoresistance film liquid adopts dimethyl sulfoxide and monoethanolamine to mix according to a certain percentage, and number percent is 70%:30%, the operation between 40 ~ 80 degree of demoulding temperature.
Described ITO electrode is horizontal direction or vertical direction conduction electrode, has regular figure structure; ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, separate, mutually insulated, staggered designs.
The formation of insulation course:
Glass substrate after ITO electrode, at the uniform negativity photoresist of its metal face coating a layer thickness,
Negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent; Light blockage coating thickness is 0.5um ~ 3um.Coating negativity photoresist mode has spin coating, the modes such as blade coating.
Pre-baked through photoresistance through product after above-mentioned processing procedure, exposure, develops, and finally forming thickness is 0.5 ~ 3um and regular insulating layer pattern.Pre-baked temperature and time scope is: 60 degree ~ 150 degree, and 50 seconds to 200 seconds, exposure energy adopted 100mj to 500mj, and it is alkaline solution that developer solution adopts Na system or Ka, and the temperature of development adopts 20 ~ 40 degree constant temperature operations.Pass through again insulation course firmly roasting, condition be 200 degree to 300 degree, the time is 0.5 hour to 3 hours, after above-mentioned processing procedure, finally forming thickness is 0.5um ~ 3um, the second insulation course of figure rule.
Non-overlapping integrated capacitive touch screen and non-overlapping integrated touch screen without metal electrode layer structurally with in production technology are all simplified to some extent, cancelled metal electrode, reduce material cost, reduced upper runoff yield journey, on touch function, all can realize single-point touches and gesture identification.
Without the non-overlapping integrated capacitive touch screen of metal electrode layer, due to without metal electrode, the maximum value of its ITO electric conduction pole-face resistance hinders much smaller than non-overlapping integrated touch screen ito surface.
Above content is in conjunction with concrete preferred implementation further description made for the present invention, can not assert that specific embodiment of the invention is confined to these explanations.For general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (6)
1. without the non-overlapping integrated capacitive touch screen of metal electrode layer, it is characterized in that: comprise transparency carrier, stack gradually black resin layer, ITO electrode, insulation course in transparency carrier; Described ITO electrode is horizontal direction or vertical direction conduction electrode, has regular figure structure; ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, separate, mutually insulated, staggered designs; Described transparency carrier comprises He Fei viewfinder area, viewfinder area, and black resin layer is distributed in the non-viewfinder area of display screen; Described transparency carrier is that thickness is at chemically reinforced glass substrate or the resin material substrate of 0.5mm～2.0mm; Described ITO electrode regular texture is triangle, or bar shaped, or oval; Described black resin layer thickness is 0.3 μ m～5 μ m; ITO electrode layers thickness is 80～2000 Ethylmercurichlorendimides, and surface resistance is 10～270 ohm; Black resin region is trapezium structure, and interior thickness is 0.3um～5um, and its bevel angle is that between 6～60 degree, angle is mild.
2. as claimed in claim 1 without the non-overlapping integrated capacitive touch screen of metal electrode layer, it is characterized in that: described ITO comprises In
2o
3and SnO
2, its mass ratio is 85～95:5～15.
3. prepare the method without the non-overlapping integrated capacitive touch screen of metal electrode layer, comprise step:
The formation of black resin layer: black resin is uniformly coated on transparency carrier through rotary coating mode or the formula coating method of scraping, and coating thickness is 0.3 μ m～5 μ m, pre-baked through well heater, exposure, develops, and makes it to form required black resin region; Described black resin is photonasty protective seam photoresist, and described photoresist comprises acrylic resin, epoxy resin, negative photosensitive agent, acetic acid propylene glycol monomethyl ether ester and black pigment; Its ratio is resene: acetic acid propylene glycol monomethyl ether ester: black pigment and negative photosensitive agent=15～30:60～80:1～10;
The formation of ITO electrode layer:
Form the transparency carrier of black resin layer, through ITO plated film, make to form the ITO rete of layer of transparent and even thickness on transparency carrier, its thickness is 80～2000 Ethylmercurichlorendimides, and surface resistance is 10～270 ohm;
Through the transparency carrier of ITO plated film, at the uniform positivity photoresist of its ITO surface-coated a layer thickness, light blockage coating thickness is 1 μ m～5 μ m;
Pre-baked through photoresistance, exposure, develops, etching, and de-photoresistance film, finally forming thickness is 80～2000 Ethylmercurichlorendimides, surface resistance is 10～270 ohm and regular ITO pattern or electrode;
Described ITO electrode is horizontal direction or vertical direction conduction electrode, has regular figure structure; ITO electrode is that ITO conduction electrode 1 forms with ITO conduction electrode 2, and ITO conduction electrode 1 and ITO conduction electrode 2 are in same aspect, separate, mutually insulated, staggered designs;
The formation of insulation course:
Transparency carrier after ITO electrode, at the uniform negativity photoresist of its metal face coating a layer thickness, light blockage coating thickness is 0.5 μ m～3 μ m;
Pre-baked through photoresistance, exposure, develops, and finally forming thickness is 0.5～3 μ m and regular insulating layer pattern.
4. preparation as claimed in claim 3, without the method for the non-overlapping integrated capacitive touch screen of metal electrode layer, is characterized in that: described transparency carrier is thickness at chemically reinforced glass substrate or the resin material substrate of 0.5～2.0 millimeter; Described ITO comprises In
2o
3and SnO
2, its mass ratio is 85～95:5～15.
5. preparation as claimed in claim 4, without the method for the non-overlapping integrated capacitive touch screen of metal electrode layer, is characterized in that:
Described positivity photoresist major component is acetic acid propylene glycol monomethyl ether ester, epoxy resin and positivity emulsion; Negativity photoresist major component is acetic acid propylene glycol monomethyl ether ester, acrylic resin, epoxy resin and negative photosensitive agent.
6. preparation as claimed in claim 4, without the method for the non-overlapping integrated capacitive touch screen of metal electrode layer, is characterized in that: the mode of described ITO plated film is vacuum magnetic control sputter, or is chemical vapour deposition technique, or is hot evaporation, or is collosol and gel.
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| CN201210028557.7A CN102541383B (en) | 2012-02-09 | 2012-02-09 | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method for non-lapping integrated capacitive touch screen |
| PCT/CN2013/070866 WO2013117130A1 (en) | 2012-02-09 | 2013-01-23 | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method thereof |
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| CN201210028557.7A CN102541383B (en) | 2012-02-09 | 2012-02-09 | Non-lapping integrated capacitive touch screen without metal electrode layer and manufacturing method for non-lapping integrated capacitive touch screen |
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| WO2016141709A1 (en) * | 2015-03-06 | 2016-09-15 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, and display device |
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| CN102830880A (en) * | 2012-08-21 | 2012-12-19 | 深圳市宝明科技股份有限公司 | Non-overlapped integral capacitive touch screen with ITO (indium tin oxide) layer and manufacturing method of novel non-overlapped integral capacitive touch screen |
| CN102955615B (en) * | 2012-11-09 | 2016-04-06 | 北京京东方光电科技有限公司 | The manufacture method of a kind of touch-screen, touch control display apparatus and a kind of touch-screen |
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| US10254876B2 (en) | 2015-03-06 | 2019-04-09 | Boe Technology Group Co., Ltd. | Array substrate, fabricating method thereof and display device |
Also Published As
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| WO2013117130A1 (en) | 2013-08-15 |
| CN102541383A (en) | 2012-07-04 |
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