WO2012046323A1 - Dispositif de mise en phase - Google Patents

Dispositif de mise en phase Download PDF

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Publication number
WO2012046323A1
WO2012046323A1 PCT/JP2010/067634 JP2010067634W WO2012046323A1 WO 2012046323 A1 WO2012046323 A1 WO 2012046323A1 JP 2010067634 W JP2010067634 W JP 2010067634W WO 2012046323 A1 WO2012046323 A1 WO 2012046323A1
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WO
WIPO (PCT)
Prior art keywords
crystal
light
incident light
laf
phase
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PCT/JP2010/067634
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English (en)
Japanese (ja)
Inventor
伸一郎 戸田
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株式会社光学技研
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Priority to PCT/JP2010/067634 priority Critical patent/WO2012046323A1/fr
Publication of WO2012046323A1 publication Critical patent/WO2012046323A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3083—Birefringent or phase retarding elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides

Definitions

  • the present invention relates to a phase shifter, and more particularly to a phase shifter used for laser light in an infrared region.
  • the CO 2 laser is widely used mainly for decoration such as welding, cutting, marking, engraving, and medical treatment.
  • the material to be processed in the CO 2 laser resins, wood, cloth, etc., since the mentioned various materials, processing by CO 2 lasers are versatile technology.
  • the p-polarized light and the s-polarized light can be controlled by making the laser light enter the reflective phase retarder at a specific incident angle.
  • the optical path changes due to reflection, so that the angle and position of incident light and outgoing light are different and adjustment is difficult.
  • the processing apparatus is increased in size because it passes through a large number of reflection type phase shifters. Therefore, there is a problem that the degree of freedom in the arrangement of the optical system or apparatus in the laser processing apparatus is low.
  • the transmission type phase shifter can adjust only the phase by transmitting the laser beam, and the optical path does not change. Therefore, the apparatus becomes larger as in the case of using the reflection type phase shifter described above. Without being preferred.
  • anisotropic A material that is sexable is needed.
  • CdS can be cited.
  • CdS is designated as a poison, there is a possibility of adversely affecting the human body when polishing and processing CdS crystals. This is not preferable.
  • other materials that transmit light in the above wavelength range and have anisotropy are also mainly poisonous and deleterious substances, and are environmentally hazardous substances. Therefore, a transmissive phaser is used in the control of the CO 2 laser. It was difficult.
  • LaF 3 is known as a material that transmits light in the ultraviolet region and infrared region.
  • Patent Document 1 discloses that LaF 3 can be used for an infrared transmission structure.
  • Patent Document 1 a material having a modulus of elasticity of 100 GPa or more on a ZnS substrate, Ge, Si, GaP, BP, Y 2 O 3 , Al 2 O 3 , TiO 2 , YF 3 , LaF 3 , CeF 3 is used.
  • An infrared transmission structure having a structure in which a layer composed of any of the above and a layer composed of diamond or diamond-like carbon is sequentially laminated is disclosed.
  • Patent Document 1 since the infrared transmission structure of Patent Document 1 has a configuration in which a plurality of layers are stacked on a ZnS substrate, the configuration is complicated and productivity is reduced. In addition, each layer stacked on the ZnS substrate is in an amorphous state and is not a uniaxial crystal, and thus is not suitable as a phase shifter. Furthermore, since ZnS used as a substrate is designated as a deleterious substance, a phaser using a highly safe material has been desired.
  • the subject is a phaser that transmits incident light in the infrared region and controls the phase of outgoing light that is emitted parallel to the incident light.
  • the phase shifter of the present invention uses a LaF 3 single crystal that is a uniaxial birefringent crystal.
  • the LaF 3 single crystal is transparent in the infrared region and has a high transmittance. Therefore, the phase of transmitted light can be controlled by transmitting a phase shifter made of LaF 3 single crystal. Therefore, since a transmission type phase shifter can be provided even for light in the infrared region, only the phase difference can be controlled without changing the optical path. As a result, in a laser processing apparatus or the like, the configuration for controlling the optical path is suitable without increasing the size.
  • transmissive materials are generally used for transmissive materials that transmit light in the infrared region and are birefringent crystals.
  • transmissive phase retarders have not been generally used, but LaF 3 is not a toxic material. Therefore, it can be suitably used as a phaser. Furthermore, since the phase shifter is formed of LaF 3 single crystal, a complicated process such as laminating a plurality of thin films is not required when manufacturing the phase shifter. Since the phase shifter of the present invention can be manufactured by polishing a LaF 3 single crystal to an appropriate size in accordance with a desired phase difference, the manufacturing process can be simplified.
  • the subject is a phase shifter that transmits incident light in the infrared region and controls the phase of outgoing light that is emitted in parallel to the incident light, the optical axis of which is orthogonal to the incident light.
  • the LaF 3 single crystal disposed as the first crystal is a first crystal, and the optical axis is disposed perpendicular to the optical axis of the incident light and the first crystal, and the thickness is different from the thickness of the first crystal.
  • a second crystal having The second crystal is made of a LaF 3 single crystal and is solved by being adjacent to the first crystal in the traveling direction of the incident light and joined by an optical contact.
  • the phase difference is controlled depending on the difference in thickness.
  • the phase retarder may be very thin depending on a desired phase difference.
  • the first crystal and the second crystal are arranged side by side in the traveling direction of the incident light as described above, and an appropriate thickness can be obtained.
  • the phaser can be controlled by the phase difference.
  • the first crystal and the second crystal are joined by optical contact, no adhesive or the like is used. Therefore, it can be transmitted with high transmittance without absorbing infrared light.
  • the subject is a phase shifter that transmits incident light in the infrared region and controls the phase of outgoing light emitted parallel to the incident light, the optical axis of which is orthogonal to the incident light.
  • the LaF 3 single crystal disposed as the first crystal is a first crystal, and the optical axis is disposed perpendicular to the optical axis of the incident light and the first crystal, and the thickness is different from the thickness of the first crystal.
  • the second crystal is further composed of a LaF 3 single crystal, and is disposed apart from the first crystal in the traveling direction of the incident light.
  • the phase difference is controlled depending on the difference in thickness. can do.
  • the phaser of this configuration does not have a bonding surface. Therefore, even when used for high-power laser light, it can be used for a long time without being damaged.
  • the phase shifter of the present invention is particularly preferably used when the incident light is CO 2 laser light.
  • the LaF 3 single crystal is a crystal that is transparent in the infrared region (at least 7 to 11 ⁇ m).
  • the wavelength of the CO 2 laser light is about 10 ⁇ m, the LaF 3 single crystal can sufficiently transmit the CO 2 laser light. Therefore, the phase shifter of the present invention can control the phase of CO 2 laser light frequently used for microfabrication, and is a transmission type phase shifter as described above. Can be secured.
  • the phase shifter of the present invention uses LaF 3 as a material constituting the phase shifter. Since the LaF 3 single crystal is transparent in the infrared region and is a birefringent crystal, the LaF 3 single crystal can be a transmission phase retarder effective for light in the infrared region. In addition, since the LaF 3 single crystal does not contain an environmental load substance, a highly safe phase retarder can be provided. Furthermore, since the phase retarder of the present invention is composed of a LaF 3 single crystal, the structure is simple. Therefore, it is only necessary to polish the LaF 3 single crystal, and the manufacturing process of the phaser can be simplified. As a result, it is possible to provide a phaser having a good yield and stable quality.
  • LaF 3 is a graph showing the relationship between the wavelength and transmittance of the single crystal.
  • LaF 3 is a graph showing the relationship between the wavelength and the birefringent index of the single crystal. It is explanatory drawing showing the structure of the phaser which concerns on one Embodiment of this invention. It is a graph which shows the relationship between the wavelength of the phaser which concerns on one Embodiment of this invention, and a phase difference. It is a graph which shows the relationship between the wavelength of the phaser which concerns on one Embodiment of this invention, and a phase difference. It is a graph which shows the relationship between the wavelength of the phaser which concerns on one Embodiment of this invention, and a phase difference.
  • FIG. 1 is a graph showing the relationship between the wavelength and transmittance of LaF 3 single crystal
  • Fig. 2 is a graph showing the relationship between the wavelength and the birefringent index of LaF 3 single crystal
  • FIG. 3 is an explanatory diagram showing the configuration of the phase shifter
  • FIGS. 4 to 7 are graphs showing the relationship between the wavelength of the phase shifter and the phase difference
  • FIG. 9 is an explanatory diagram showing the configuration of a phase shifter according to another embodiment of the present invention
  • FIG. 9 is an explanatory diagram showing the configuration of a phase shifter according to still another embodiment of the present invention.
  • the phase shifter 100 of this embodiment is demonstrated with reference to FIG. 1 thru
  • the phase shifter 100 of the present embodiment can control the phase of the outgoing light I ′ that is transmitted in parallel to the incident light I through the incident light I in the infrared light region. Then, with the first crystal 10 in which the optical axis L is arranged perpendicular to the incident light I, first crystal 10 is composed of LaF 3 single crystal.
  • the phase shifter 100 of the present embodiment is a polarization control element that can handle at least light in the infrared region.
  • the phaser 100 is made of a LaF 3 single crystal that is transparent in the infrared region and is a uniaxial crystal. As shown in FIG. 1, LaF 3 single crystal has a wavelength of 90 to 90 ⁇ m at least in the infrared region where the wavelength of light is 7 to 11 ⁇ m, more specifically, the wavelength range of light of CO 2 laser. It is a transparent crystal with a light transmittance higher than%.
  • FIG. 2 shows the birefringence ⁇ n (difference between ordinary light refractive index and extraordinary light refractive index) of the LaF 3 single crystal in the above wavelength range.
  • ⁇ n tends to decrease on the long wavelength side, but the LaF 3 single crystal tends to increase ⁇ n on the longer wavelength side as shown in FIG. It is preferable that ⁇ n is increased on the long wavelength side because the wavelength dependency of the phase shifter is reduced. Therefore, the LaF 3 single crystal can transmit light in the infrared region and has a small wavelength dependency, and therefore can be particularly suitably used as a material constituting the phase shifter 100.
  • the phase shifter 100 is formed of a first crystal 10 made of LaF 3 single crystal, which is an anisotropic crystal material.
  • the phaser 100 is mainly formed by polishing a LaF 3 single crystal into a plate shape.
  • the phase shifter 100 has a first incident surface 11 on which incident light I from the outside, which is substantially perpendicular to the optical axis L (x direction in FIG. 3), and a position facing the first incident surface 11.
  • the first transmitted light exit surface 12 which is formed at a thickness d m is provided.
  • the first incident surface 11 and the first transmitted light exit surface 12 are formed substantially in parallel. It will be described later thickness d m.
  • the incident light I incident from the first incident surface 11 substantially perpendicular to the optical axis L is transmitted toward the first transmitted light exit surface 12 facing the first incident surface 11. Then, the emitted light I ′ is emitted from the first transmitted light exit slope 12 to the outside.
  • the incident light I is perpendicular to the polarization component parallel to the optical axis L. Separated into various polarization components.
  • the incident light I has a phase difference depending on the birefringence ⁇ n.
  • the phase difference ⁇ (°) between the incident light I and the outgoing light I ′ is expressed by the following equation (1).
  • the ⁇ + (360 ⁇ m) 360 ⁇ d m (n o ⁇ n e ) / ⁇ (1) (M: degree, d m: thickness, n o: ordinary refractive index, n e: extraordinary refractive index, lambda: wavelength of incident light I)
  • Reference numeral 7 denotes a ⁇ / 2 plate when the wavelength ⁇ of the incident light I is 10.6 ⁇ m and the phase difference ⁇ is 180 ° ( ⁇ ).
  • the phase shifter 100 made of LaF 3 single crystal with low toxicity can control the plane of polarization for light in the infrared region (especially CO 2 laser light) having a wavelength of 7 to 11 ⁇ m.
  • the phase shifter 200 further includes a second crystal 30 having an optical axis L ′ orthogonal to the incident light I and the optical axis L of the first crystal 20 and having a thickness different from the thickness of the first crystal 20. I have.
  • the second crystal 30 is made of a LaF 3 single crystal, is adjacent to the first crystal 20 in the traveling direction of the incident light I, and is joined by an optical contact.
  • the phaser 200 of the present embodiment is composed of two LaF 3 single crystals.
  • the phaser 200 is formed by joining the first crystal 20 made of LaF 3 single crystals having different thicknesses and the second crystal 30 by optical contact. At this time, the optical axis L of the first crystal 20 and the optical axis L ′ of the second crystal 30 are arranged in directions orthogonal to each other.
  • the first crystal 20 has a first incident surface 21 on which incident light I from the outside, which is substantially perpendicular to the optical axis L (x direction in FIG. 8), and a position facing the first incident surface 21.
  • the first transmitted light exit surface 22 which is formed at a thickness d 2 is provided.
  • the plate thickness d 2 indicates the length in the same direction as the incident light I (that is, the y direction).
  • the second crystal 30 is disposed so that its optical axis L ′ is orthogonal to the optical axis L of the first crystal 20 and is adjacent to the first crystal 20 along the traveling direction of the incident light I. Arranged.
  • the second transmitted light exit surface 32 formed at a thickness d 3 is provided.
  • the plate thickness d 3 is the incident light I in the same direction (i.e., y-direction) is intended to refer to a length of.
  • the incident light I incident from the first incident surface 21 substantially perpendicular to the optical axes L and L ′ passes through the first transmitted light exit surface 22 and the second incident surface 31.
  • the light is transmitted toward the second transmitted light exit slope 32.
  • the light incident from the second incident surface 31 of the second crystal 30 joined to the first transmitted light emitting surface 22 of the first crystal 20 is emitted to the outside as the emitted light I ′ from the second transmitted light emitting slope 32.
  • a phase shifter 200 having a configuration in which LaF 3 single crystal, which is a birefringent crystal, is bonded so that the optical axes L and L ′ are orthogonal to each other depends on the birefringence index ⁇ n, similar to the phase shifter 100 described above.
  • ⁇ n the birefringence index
  • the phase difference ⁇ depends on the difference in thickness (d 3 -d 2 ).
  • phase difference ⁇ (°) between the incident light I and the outgoing light I ′ is expressed by the following equation (2).
  • ⁇ + (360 ⁇ m) 360 ⁇ (d 3 ⁇ d 2 ) ⁇ (n o ⁇ n e ) / ⁇ (2)
  • M degree
  • d 2 thickness of the first crystal
  • d 3 thickness of the second crystal
  • n o ordinary refractive index
  • n e extraordinary refractive index
  • lambda wavelength of incident light I
  • the phase difference ⁇ By substituting the phase difference ⁇ into the above equation (2), the difference between the plate thicknesses d 3 and d 2 of the phase shifter 200, that is, ⁇ d can be obtained.
  • FIG. 8 shows the case of d 3 > d 2 , the reverse relationship may be used.
  • the transmission type phase retarder has a problem that, depending on a desired phase difference, if the thickness of the phase retarder has to be very thin, polishing is difficult and the strength is lowered.
  • the phase shifter 200 having an appropriate thickness can be obtained. Therefore, it is possible to improve the processing accuracy and strength, and to obtain the phaser 200 that generates an appropriate phase difference ⁇ .
  • the transmittance is high even in the light in the infrared region (especially the wavelength range is 7 to 11 ⁇ m). As a result, it is particularly preferably used for light in the infrared region.
  • the phaser 300 further includes a second crystal 50 having an optical axis L ′ orthogonal to the incident light I and the optical axis L of the first crystal 40 and having a thickness different from the thickness of the first crystal 40.
  • the second crystal 50 is made of a LaF 3 single crystal and is arranged at a predetermined distance from the first crystal 40 in the traveling direction of the incident light I. That is, it is formed in an air gap type.
  • the phaser 300 of the present embodiment is composed of two LaF 3 single crystals.
  • the phaser 300 is formed by arranging the first crystal 40 made of LaF 3 single crystal and the second crystal 50 in parallel with the air gap S therebetween. At this time, the optical axis L of the first crystal 40 and the optical axis L ′ of the second crystal 50 are arranged in directions orthogonal to each other.
  • the first crystal 40 has a first incident surface 41 on which incident light I from the outside, which is substantially perpendicular to the optical axis L (x direction in FIG. 9), and a position facing the first incident surface 41.
  • the first transmitted light exit surface 42 that is formed at a thickness d 4 is provided.
  • the plate thickness d 4 is the incident light I in the same direction (i.e., y-direction) is intended to refer to a length of.
  • the second crystal 50 is disposed such that its optical axis L ′ is orthogonal to the optical axis L of the first crystal 40 and is separated from the first crystal 40 along the traveling direction of the incident light I. Arranged. At a position opposite to the second incident surface 51 where the transmitted light from the first transmitted light exit surface 42 that is substantially perpendicular to the optical axis L ′ (z direction in FIG. 9) is incident, the second transmitted light exit surface 52 that is formed at a thickness d 5 is provided. Thus, the second incident surface 51 and the second transmitted light exit surface 52 are formed substantially in parallel.
  • the plate thickness d 5 indicates the length in the same direction as the incident light I (that is, the y direction).
  • the incident light I incident from the first incident surface 41 substantially perpendicular to the optical axes L and L ′ is the first transmitted light emitting surface 42, the air gap S, the second The light is transmitted toward the second transmitted light exit slope 52 via the incident surface 51.
  • the light incident from the second incident surface 51 of the second crystal 50 disposed with the air gap S on the first transmitted light emitting surface 42 of the first crystal 40 is the second transmitted light emitting slope 52. Is emitted to the outside as outgoing light I ′.
  • a certain phase shifter 300 can cause a phase difference with respect to the incident light I depending on the birefringence ⁇ n, like the phase shifter 100 described above. At this time, the phase difference ⁇ depends on the difference in thickness (d 5 -d 4 ).
  • phase difference ⁇ (°) between the incident light I and the outgoing light I ′ is expressed by the following equation (3).
  • ⁇ + (360 ⁇ m) 360 ⁇ (d 5 ⁇ d 4 ) ⁇ (n o ⁇ n e ) / ⁇ (3)
  • M order
  • d 4 plate thickness of the first crystal
  • d 5 plate thickness of the second crystal
  • n o ordinary light refractive index
  • n e extraordinary light refractive index
  • ⁇ wavelength of incident light I
  • the phase difference ⁇ into the above equation (3), the difference between the plate thicknesses d 5 and d 4 of the phase shifter 300, that is, ⁇ d can be obtained.
  • FIG. 9 shows the case of d 5 > d 4 , but the reverse relationship may be used.
  • the two LaF 3 single crystals are separated from each other by the air gap S as in the phaser 300 in the above configuration. And arranged in parallel.
  • the phase shifter 300 is particularly preferably used for a processing apparatus using CO 2 laser light.
  • first crystals 10, 20, 40 and the second crystals 30, 50 have been described.
  • 200, 300 may be attached with a holder for holding the device or the like in a predetermined position.
  • the phase shifters 100, 200, and 300 of the present invention are formed of LaF 3 single crystal. Then, LaF 3 single crystal, an infrared region (more specifically, 7 ⁇ 11 [mu] m) in the wavelength range of exhibited higher transmittance than 90%, and, because it is uniaxial crystal, CO 2 laser beam It is particularly suitable as a material constituting the transmission type phase retarder used in the above.
  • CdS has been known as a material that is transparent in the infrared region and forms a birefringent crystal.
  • CdS shows toxicity, it is difficult to use the CdS crystal as a transmission type phase shifter. That is, a transmission phase retarder for CO 2 laser light that uses wavelengths in the infrared region cannot generally be used.
  • a transmission type phase retarder for CO 2 laser light that uses wavelengths in the infrared region cannot generally be used.
  • a safe phase retarder that does not contain a poison is provided. be able to.
  • the phaser of the present invention is not a complicated configuration such as laminating a plurality of thin films in order to create a phaser, but a phaser made of LaF 3 single crystal. Therefore, the manufacturing process is not complicated when the phaser is manufactured, and as a result, the phaser can be manufactured with a high yield.
  • the LaF 3 single crystal shows a tendency that ⁇ n increases toward the longer wavelength side. As ⁇ n increases on the longer wavelength side, the wavelength dependence of the phase retarder becomes smaller. Therefore, the phase retarder configured by the LaF 3 single crystal has less wavelength dependence and transmits laser light in the infrared region. be able to.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Polarising Elements (AREA)

Abstract

La présente invention a pour objet un dispositif de mise en phase d'une grande fiabilité, qui peut être utilisé par rapport à un faisceau laser dans la région infrarouge et dont la configuration est simple. Un dispositif de mise en phase (100) transmet un faisceau d'entrée (I) dans la région infrarouge et commande la phase d'un faisceau de sortie (I') qui sort parallèlement au faisceau d'entrée (I). Le dispositif de mise en phase (100) est caractérisé en ce qu'il comprend un premier cristal (10) dans lequel l'axe optique (L) est situé de manière à définir une intersection à angle droit avec le faisceau d'entrée (I), et en ce que le premier cristal (10) est constitué de monocristal LaF3.
PCT/JP2010/067634 2010-10-07 2010-10-07 Dispositif de mise en phase WO2012046323A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014098756A (ja) * 2012-11-13 2014-05-29 Sumitomo Electric Hardmetal Corp 光学部品
WO2016147891A1 (fr) * 2015-03-18 2016-09-22 株式会社トクヤマ Cristal unique de fluorure de lanthane, et élément optique

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61107215A (ja) * 1984-10-30 1986-05-26 Toyo Commun Equip Co Ltd 光減衰器
JP2000126885A (ja) * 1998-10-26 2000-05-09 Mitsubishi Electric Corp レーザ装置及びレーザ加工装置
JP2000351696A (ja) * 1999-06-14 2000-12-19 Univ Tohoku フッ化物バルク単結晶の製造方法
JP2004258503A (ja) * 2003-02-27 2004-09-16 Nikon Corp 偏光素子および光学系および光学測定装置
JP2007515657A (ja) * 2003-09-09 2007-06-14 カール・ツァイス・エスエムティー・アーゲー 位相遅れ要素および位相遅れ要素の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61107215A (ja) * 1984-10-30 1986-05-26 Toyo Commun Equip Co Ltd 光減衰器
JP2000126885A (ja) * 1998-10-26 2000-05-09 Mitsubishi Electric Corp レーザ装置及びレーザ加工装置
JP2000351696A (ja) * 1999-06-14 2000-12-19 Univ Tohoku フッ化物バルク単結晶の製造方法
JP2004258503A (ja) * 2003-02-27 2004-09-16 Nikon Corp 偏光素子および光学系および光学測定装置
JP2007515657A (ja) * 2003-09-09 2007-06-14 カール・ツァイス・エスエムティー・アーゲー 位相遅れ要素および位相遅れ要素の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014098756A (ja) * 2012-11-13 2014-05-29 Sumitomo Electric Hardmetal Corp 光学部品
WO2016147891A1 (fr) * 2015-03-18 2016-09-22 株式会社トクヤマ Cristal unique de fluorure de lanthane, et élément optique

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