WO2010106963A1 - 反射型発光ダイオード及び反射型発光ダイオード発光装置 - Google Patents
反射型発光ダイオード及び反射型発光ダイオード発光装置 Download PDFInfo
- Publication number
- WO2010106963A1 WO2010106963A1 PCT/JP2010/054134 JP2010054134W WO2010106963A1 WO 2010106963 A1 WO2010106963 A1 WO 2010106963A1 JP 2010054134 W JP2010054134 W JP 2010054134W WO 2010106963 A1 WO2010106963 A1 WO 2010106963A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- lead
- application
- application lead
- emitting diode
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 18
- 230000020169 heat generation Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 238000005452 bending Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000004696 Poly ether ether ketone Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920002530 polyetherether ketone Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
Definitions
- the present invention relates to a surface-mounted reflective light-emitting diode mounted on the surface of a printed circuit board or the like and a reflective light-emitting diode light-emitting device in which the reflective light-emitting diode is surface-mounted.
- a reflective light emitting diode having a light emitting element and a support having a concave reflecting surface fixed to the light emitting element and reflecting the light emitted from the light emitting element at the reflecting surface and outputting the light to the outside It is known (see, for example, Patent Document 1).
- a pair of leads for passing a current to the light emitting element is disposed on the opposite side surface of the support, and each lead extends to the light emitting element disposed above the reflecting surface. ing.
- the light L emitted from the first light-emitting element 11 and the second light-emitting element 12 is directed downward as indicated by an arrow line in FIG. 6, it is reflected by the reflecting surface 2 having a parabolic curved surface. After being reflected by the reflecting surface 2, the light L becomes a substantially parallel light beam and is emitted from the upper surface of the support 6 in a direction perpendicular to the upper surface. For this reason, the light L emitted from the reflective light-emitting diode 1 is light having a strong directivity with a uniform orientation as compared with a light-emitting diode or the like on a bullet-shaped output surface.
- a method for manufacturing the reflective light-emitting diode 1 according to the embodiment of the present invention will be described with reference to steps (a) to (d) in FIGS. It should be noted that the manufacturing method of the reflective light emitting diode 1 described below is an example, and it is needless to say that the present invention can be realized by various other manufacturing methods including this modification.
- the transparent resin 14 is cured and the first bonding wire 101, the second bonding wire 102, and the like are fixed in the recesses of the support 6, and then the first outside the support 6.
- a process of bending the first application lead 7, the intermediate lead 8, and the second application lead 9 is performed. Due to the stress generated during the bending process, between the first wire connecting arm 7a and the first element mounting arm 8a, and between the second wire connecting arm 8b and the second element mounting arm 9a. The force that separates the respective distal ends acts in the arm extending direction.
- the first bonding wire 101 and the second bonding wire 102 are wired along the bonding direction perpendicular to the arm extending direction.
- the 1st bonding wire 101 and the 2nd bonding wire 102 are not pulled by the force which pulls apart the front-end
- the disconnection of the first bonding wire 101 and the second bonding wire 102 that occurs when the first application lead 7, the intermediate lead 8, and the second application lead 9 are bent into a U-shape. This can be effectively prevented and the production yield of the reflective light emitting diode 1 is improved.
- each of the first application leads 7-1 and 7-2 includes the first wire connecting arms 7a1 and 7a2 and the wide lead side surface portion 71-1 disposed along the wall surface of the support 6. 71-2 and wide lead lower surface portions 72-1 and 72-2 disposed along the lower surface of the support 6.
- Each of the second application leads 9-1 and 9-2 includes a second element mounting arm 9a19a2, wide lead side surface portions 91-1 and 91-2 arranged along the wall surface of the support body 6, and the support body 6 respectively.
- Wide lead lower surface portions 92-1 and 92-2 disposed along the lower surface of the first and second wide leads. That is, each of the first application leads 7-1 and 7-2 and the second application leads 9-1 and 9-2 is U-shaped along the outer surface of the support 6 so that it can be mounted on the mounting substrate 50. It is bent into a shape.
- a dam 307 is formed in the groove 37 of the support 6 so as to block the step from the upper surface of the fitting portion of the first application lead 7-1 on one side to the upper edge surface of the support 6.
- a dam 309 is formed in the grooves 39a and 39b of the support 6 so as to block the step from the upper surface of the fitting portion of the second application lead 9-1 on one side to the upper edge surface of the support 6. Yes.
- the grooves 38 a to 38 c of the support 6 the steps from the upper surfaces of the fitting portions of the other second application lead 9-2 and the first application lead 7-2 to the upper edge surface of the support 6.
- a dam 308 is formed so as to close the door.
- the first light emitting element 11 and the second light emitting element 12 of the reflection type light emitting diode 1A are connected in series.
- the current flowing through the first application leads 7-1 and 7-2 and the second application leads 9-1 and 9-2 can be reduced.
- a reflective light emitting diode light emitting device that has a plurality of light emitting elements, has high brightness of emitted light, and can suppress an increase in the amount of heat generated at the lead can be realized.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
本発明の一つの実施の形態に係る反射型発光ダイオード1は、図1に示すように、内部に凹面状の反射面2を有する支持体6と、反射面2の上方中央部から支持体6の第1の壁面に向けて水平に延びる第1のワイヤ接続用アーム7aを有する第1印加リード7と、反射面2の上方中央部から支持体6の第1の壁面に対向する第2の壁面に向けて水平にそれぞれ延びる第1の素子マウント用アーム8a及び第2のワイヤ接続用アーム8bを有する中間リード8と、反射面2の上方中央部から支持体6の第1の壁面に向けて水平に延びる第2の素子マウント用アーム9aを有する第2印加リード9と、反射面2の上方中央部において第1の素子マウント用アーム8aの先端部に反射面2と対向して搭載され、且つ第1のワイヤ接続用アーム7aと電気的に接続された第1の発光素子11と、反射面2の上方中央部において第2の素子マウント用アーム9aの先端部に反射面2と対向して搭載され、且つ第2のワイヤ接続用アーム8bと電気的に接続された第2の発光素子12とを備えている。
本発明の第2の実施の形態に係る反射型発光ダイオード発光装置について、図10~図12を用いて説明する。本実施の形態の反射型発光ダイオード発光装置は、反射型発光ダイオード1Aを実装基板50に実装して成るものである。反射型発光ダイオード1Aは、図1に示した第1の実施の形態の反射型発光ダイオード1とはリードの構造が異なっている。そして、実装基板50側の電極51~53により反射型発光ダイオード1Aにマウントされている2個の発光素子11,12を直列接続とする点を特徴としている。
上記のように、本発明は実施の形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。
Claims (4)
- 内部に凹面状の反射面を有する支持体と、
前記反射面の上方中央部から前記支持体の第1の壁面に向けて水平に延びる第1のワイヤ接続用アームを有する第1印加リードと、
前記反射面の上方中央部から前記支持体の前記第1の壁面に対向する第2の壁面に向けて水平にそれぞれ延びる第1の素子マウント用アーム及び第2のワイヤ接続用アームを有する中間リードと、
前記反射面の上方中央部から前記支持体の前記第1の壁面に向けて水平に延びる第2の素子マウント用アームを有する第2印加リードと、
前記反射面の上方中央部において前記第1の素子マウント用アームの先端部に前記反射面と対向して搭載された第1の発光素子と、
前記反射面の上方中央部において前記第2の素子マウント用アームの先端部に前記反射面と対向して搭載された第2の発光素子と、
前記第1のワイヤ接続用アームにおける前記反射面の上方中央部に位置する先端部と前記第1の発光素子とを接続する第1のボンディングワイヤと、
前記第2のワイヤ接続用アームにおける前記反射面の上方中央部に位置する先端部と前記第2の発光素子とを接続する第2のボンディングワイヤとを備えたことを特徴とする反射型発光ダイオード。 - 前記第1のワイヤ接続用アーム、前記第2のワイヤ接続用アーム、前記第1の素子マウント用アーム、及び前記第2の素子マウント用アームのそれぞれの前記先端部が、前記第1及び前記第2の壁面と平行方向に沿って配置されていることを特徴とする請求項1に記載の反射型発光ダイオード。
- 前記第1印加リード、前記中間リード、及び前記第2印加リードのそれぞれが、前記支持体の外側面に沿って折り曲げられていることを特徴とする請求項1又は2に記載の反射型発光ダイオード。
- 内部に凹面状の反射面を有する支持体と、前記反射面の上方中央部から前記支持体の第1の壁面に向けて水平に延びるワイヤ接続用アームを有する片側の第1印加リードと、前記反射面の上方中央部から前記支持体の前記第1の壁面に向けて水平に延びる素子マウント用アームを有する片側の第2印加リードと、前記反射面の上方中央部から前記支持体の前記第1の壁面に対向する第2の壁面に向けて水平に延びる素子マウント用アームを有する他側の第2印加リードと、前記反射面の上方中央部から前記支持体の前記第1の壁面に対向する第2の壁面に向けて水平に延びるワイヤ接続用アームを有する他側の第1印加リードと、前記反射面の上方中央部において前記片側の第2印加リードの素子マウント用アームの先端部に前記反射面と対向して搭載された第1の発光素子と、前記反射面の上方中央部において前記他側の第2印加リードの素子マウント用アームの先端部に前記反射面と対向して搭載された第2の発光素子と、前記片側の第1印加リードのワイヤ接続用アームにおける前記反射面の上方中央部に位置する先端部と前記第1の発光素子とを接続する第1のボンディングワイヤと、前記他側の第1印加リードのワイヤ接続用アームにおける前記反射面の上方中央部に位置する先端部と前記第2の発光素子とを接続する第2のボンディングワイヤとを備え、前記片側、他側それぞれの第1印加リード及び前記片側、他側それぞれの第2印加リードが、前記支持体の外側面に沿って折り曲げられている反射型発光ダイオードと、
前記片側の第1印加リード、片側の第2印加リードそれぞれの前記支持体の底面側に折り曲げられているリード下面部それぞれに接続される互いに分離された電圧印加用の配線パターンと、前記他側の第1印加リード、他側の第2印加リードそれぞれの前記支持体の底面側に折り曲げられているリード下面部それぞれに共に接続される中間配線パターンとを備えた実装基板とから成り、
前記片側の第1印加リード、片側の第2印加リードそれぞれのリード下面部それぞれを前記互いに離れた電圧印加用の配線パターンに個別に接続し、前記他側の第1印加リード、他側の第2印加リードそれぞれのリード下面部それぞれを前記中間配線パターンに共に接続し、前記実装基板上の前記電圧印加用配線パターン及び中間配線パターンを介して片側の第1印加リード、他側の第2印加リード、他側の第1印加リード、片側の第2印加リードを直列接続したことを特徴とする反射型発光ダイオード発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011504817A JP5630436B2 (ja) | 2009-03-16 | 2010-03-11 | 反射型発光ダイオード及び反射型発光ダイオード発光装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009062766 | 2009-03-16 | ||
JP2009-062766 | 2009-03-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010106963A1 true WO2010106963A1 (ja) | 2010-09-23 |
Family
ID=42739623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/054134 WO2010106963A1 (ja) | 2009-03-16 | 2010-03-11 | 反射型発光ダイオード及び反射型発光ダイオード発光装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5630436B2 (ja) |
KR (1) | KR101630479B1 (ja) |
WO (1) | WO2010106963A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03171782A (ja) * | 1989-11-30 | 1991-07-25 | Iwasaki Electric Co Ltd | 発光ダイオード |
JPH07211940A (ja) * | 1994-01-21 | 1995-08-11 | Rohm Co Ltd | 平面発光型led発光装置及びその製造方法 |
JPH1041551A (ja) * | 1996-07-26 | 1998-02-13 | Toyoda Gosei Co Ltd | 発光ダイオードランプ組立体 |
JP2006005337A (ja) * | 2004-05-17 | 2006-01-05 | Tabuchi Electric Co Ltd | 複合型反射型発光装置 |
JP2008147575A (ja) * | 2006-12-13 | 2008-06-26 | Pearl Denkyu Seisakusho:Kk | 発光ダイオード |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01143366A (ja) * | 1987-11-30 | 1989-06-05 | Iwasaki Electric Co Ltd | Led面発光光源 |
JPH0968936A (ja) * | 1995-08-31 | 1997-03-11 | Iwasaki Electric Co Ltd | 発光ダイオードランプ |
JP2004266246A (ja) * | 2003-02-12 | 2004-09-24 | Toyoda Gosei Co Ltd | 発光装置 |
WO2004093204A1 (ja) | 2003-04-16 | 2004-10-28 | Tabuchi Electric Co., Ltd. | 反射型発光ダイオード |
WO2010013518A1 (ja) * | 2008-08-01 | 2010-02-04 | 株式会社 パールライティング | 反射型発光ダイオード |
-
2010
- 2010-03-11 KR KR1020117023734A patent/KR101630479B1/ko active IP Right Grant
- 2010-03-11 WO PCT/JP2010/054134 patent/WO2010106963A1/ja active Application Filing
- 2010-03-11 JP JP2011504817A patent/JP5630436B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03171782A (ja) * | 1989-11-30 | 1991-07-25 | Iwasaki Electric Co Ltd | 発光ダイオード |
JPH07211940A (ja) * | 1994-01-21 | 1995-08-11 | Rohm Co Ltd | 平面発光型led発光装置及びその製造方法 |
JPH1041551A (ja) * | 1996-07-26 | 1998-02-13 | Toyoda Gosei Co Ltd | 発光ダイオードランプ組立体 |
JP2006005337A (ja) * | 2004-05-17 | 2006-01-05 | Tabuchi Electric Co Ltd | 複合型反射型発光装置 |
JP2008147575A (ja) * | 2006-12-13 | 2008-06-26 | Pearl Denkyu Seisakusho:Kk | 発光ダイオード |
Also Published As
Publication number | Publication date |
---|---|
KR20110128196A (ko) | 2011-11-28 |
KR101630479B1 (ko) | 2016-06-14 |
JP5630436B2 (ja) | 2014-11-26 |
JPWO2010106963A1 (ja) | 2012-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5349755B2 (ja) | 表面実装の発光チップパッケージ | |
US8088635B2 (en) | Vertical geometry light emitting diode package aggregate and production method of light emitting device using the same | |
US7642563B2 (en) | LED package with metal PCB | |
US20090197360A1 (en) | Light emitting diode package and fabrication method thereof | |
US20100321941A1 (en) | Method for manufacturing light emitting apparatus, light emitting apparatus, and mounting base thereof | |
JP2005277380A (ja) | Led及びその製造方法 | |
WO2011136357A1 (ja) | Ledモジュール | |
WO2009130743A1 (ja) | 光素子用パッケージ、半導体発光装置および照明装置 | |
JP2006278766A (ja) | 発光素子の実装構造及び実装方法 | |
US7037001B2 (en) | Optical module having an extension member for connecting a device to a lead terminal disposed behind the sub-mount | |
KR100714628B1 (ko) | 발광 다이오드 패키지 | |
JP5833610B2 (ja) | 発光ダイオードパッケージ及びその製造方法 | |
JP4945416B2 (ja) | 発光モジュール及びその製造方法 | |
JP5630436B2 (ja) | 反射型発光ダイオード及び反射型発光ダイオード発光装置 | |
JP2009152227A (ja) | 反射型発光ダイオード | |
KR20100028033A (ko) | 발광장치 및 발광장치용 패키지 집합체 | |
JP2023059342A (ja) | 半導体装置 | |
JP5336489B2 (ja) | 反射型発光ダイオード | |
KR100754884B1 (ko) | 발광소자 및 이의 제조 방법 | |
JP2000031582A (ja) | 光モジュール | |
JP2010263151A (ja) | 反射型発光ダイオード | |
JP6986453B2 (ja) | 半導体レーザ装置 | |
JP2009152228A (ja) | 反射型発光ダイオード | |
JP2008103402A (ja) | 上下電極型発光ダイオード用パッケージ集合体および上下電極型発光ダイオード用パッケージ集合体の製造方法 | |
WO2009145056A1 (ja) | 反射型発光ダイオード |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10753455 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2011504817 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20117023734 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10753455 Country of ref document: EP Kind code of ref document: A1 |