WO2009139210A1 - 高周波収納ケースおよび高周波モジュール - Google Patents
高周波収納ケースおよび高周波モジュール Download PDFInfo
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- WO2009139210A1 WO2009139210A1 PCT/JP2009/053593 JP2009053593W WO2009139210A1 WO 2009139210 A1 WO2009139210 A1 WO 2009139210A1 JP 2009053593 W JP2009053593 W JP 2009053593W WO 2009139210 A1 WO2009139210 A1 WO 2009139210A1
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- 239000004020 conductor Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000003860 storage Methods 0.000 claims description 15
- 230000010355 oscillation Effects 0.000 claims description 13
- 238000002955 isolation Methods 0.000 abstract description 8
- 238000010030 laminating Methods 0.000 abstract 1
- 230000003321 amplification Effects 0.000 description 18
- 238000003199 nucleic acid amplification method Methods 0.000 description 18
- 239000010410 layer Substances 0.000 description 11
- 239000002344 surface layer Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L23/66—High-frequency adaptations
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- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
- H01P3/121—Hollow waveguides integrated in a substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/027—Constructional details of housings, e.g. form, type, material or ruggedness
- G01S7/028—Miniaturisation, e.g. surface mounted device [SMD] packaging or housings
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- H01L2223/6605—High-frequency electrical connections
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
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- H01P3/16—Dielectric waveguides, i.e. without a longitudinal conductor
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- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
Definitions
- the present invention relates to a high-frequency storage case and a high-frequency module that constitute a cavity that is a space electromagnetically shielded by a multilayer dielectric substrate on which a plurality of high-frequency circuits are mounted, and a shield cover material covering the multilayer dielectric substrate. Is.
- a high-frequency package equipped with a high-frequency circuit that operates in a high-frequency band such as a microwave band or a millimeter-wave band, it is electrically shielded by a metal frame or the like in consideration of its operation stability, EMI (radioactive spurious) standard, etc. Often mounted in a cavity.
- EMI radioactive spurious
- the package assembly in order to avoid spatial interference between semiconductor chips having different functions, is divided into a plurality of compartments (cavities) by a seal ring or individual lid members, and the semiconductor chips function in the divided compartments. It is mounted separately and the semiconductor chips between the compartments are electrically connected using a feedthrough.
- this conventional package structure has many problems related to cost and reliability, such as an increase in the number of members such as a seal ring and a lid, and complicated manufacturing processes such as solder joining to the package and welding of the lid.
- the chip size is on the order of wavelengths (up to about 1 mm), so shielding and partitioning with cavity physical dimensions that are substantially cut-off cannot be realized.
- An expensive absorber such as a magnetic material has to be used.
- a simple package structure and module configuration capable of ensuring isolation even in a high frequency band such as a microwave band and a millimeter wave band have been desired.
- the present invention has been made in view of the above, and provides a high-frequency storage case and a high-frequency module that can ensure spatial isolation between a plurality of high-frequency circuits with an inexpensive and simple configuration using a single cavity. Objective.
- the present invention provides a high-frequency storage case for storing a plurality of high-frequency circuits mounted on a multilayer dielectric substrate, and is formed on at least the multilayer dielectric substrate.
- a plurality of high-frequency circuits arranged in the signal propagation direction and a grounding conductor, and a shield cover material that spatially covers the plurality of high-frequency circuits, and an electromagnetic shield formed by electrically connecting the plurality of the high-frequency circuits.
- a cavity having a length in a direction perpendicular to the direction in which the high-frequency circuit is disposed is shorter than 1 ⁇ 2 of the effective wavelength in the substrate of the first signal wave generated from the high-frequency circuit, and the high-frequency circuit are mounted
- the waveguide opening and the short-circuited dielectric waveguide are provided, and the waveguide opening and the short-circuited dielectric waveguide operate as a reflection circuit for a signal propagating through the cavity.
- spatial isolation between a plurality of high-frequency circuits can be ensured with an inexpensive and simple configuration using a single cavity.
- FIG. 1 is a perspective view showing a high-frequency module according to an embodiment of the present invention.
- FIG. 2 is a cross-sectional view showing the high-frequency module according to the embodiment of the present invention.
- FIG. 3 is a plan view showing the high-frequency module according to the embodiment of the present invention.
- FIG. 4 is a diagram illustrating propagation characteristics in the cavity of the high-frequency module according to the embodiment.
- FIG. 5 is a diagram illustrating propagation characteristics of the surface signal line of the high-frequency module according to the embodiment.
- the high-frequency module 1 is equipped with a plurality of high-frequency circuits that operate in a high-frequency band such as a microwave band and a millimeter wave band.
- the high-frequency module 1 is preferably applied to, for example, an FM-CW radar.
- an oscillation circuit 10 that generates a high frequency signal having a frequency f0
- an amplification circuit 11 that amplifies the output of the oscillation circuit 10
- an output of the amplification circuit 11 are multiplied by N (N ⁇ 2).
- a multiplication / amplification circuit 12 for amplifying and outputting a multiplication signal of frequency N ⁇ f0.
- the high-frequency circuit is composed of a semiconductor element such as a field effect transistor or a high electron mobility transistor, or an MIC (microwave integrated circuit) or MMIC (monolithic microwave integrated circuit) configured by a semiconductor element and an external substrate such as a ceramic substrate. .
- the shield cover material 3 spatially covers the high-frequency circuit and may be made of metal, or a metal layer may be formed on the inner wall surface.
- a plurality of recesses (hereinafter referred to as IC mounting recesses) 6 for mounting a plurality of high-frequency circuits are formed on the multilayer dielectric substrate 2.
- the IC mounting recess 6 is formed by forming a penetrating portion in the upper layer (first layer in the illustrated example) 2 a of the multilayer dielectric substrate 2.
- the ground conductor 4 is formed on the bottom surface of the IC mounting recess 6.
- the ground conductor 4 is a solid ground formed between the upper dielectric layer 2a and the lower dielectric layer 2b in the multilayer dielectric substrate 2, as shown in FIG.
- high-frequency circuits such as an oscillation circuit 10, an amplification circuit 11, and a multiplication / amplification circuit 12 are mounted.
- high-frequency circuits such as the oscillation circuit 10, the amplification circuit 11, and the multiplication / amplification circuit 12 are mounted on the ground conductor 4 formed on the bottom surface of the IC mounting recess 6, so that the shield cover
- a surface layer ground conductor 7 is formed at a position where the shield cover material 3 contacts at least the surface of the multilayer dielectric substrate 2, and the surface layer ground conductor 7 and the ground conductor are formed.
- 4 are connected by a plurality of through holes 8. That is, in this embodiment, the cavity 5 is also formed as a shielding space by the shield cover member 3, the surface layer ground conductor 7, the plurality of through holes 8, and the ground conductor 4.
- the high frequency circuits are connected by wire bonding with wires 20 made of gold or the like. Instead of wires, other conductive connection members such as gold ribbons and solder balls may be used. Between the amplifying circuit 11 and the multiplying / amplifying circuit 12, as shown in FIG. 3, a wire 20 and further a microstrip line or a coplanar line formed on the surface dielectric layer 2a are not used. An electrical input / output connection is made by the signal line 21. On the surface layer of the multilayer dielectric substrate 2, conductor pads 22 for supplying a DC bias voltage or inputting / outputting a control signal between high frequency circuits are formed. In addition, although the conductor pad 22 and each high frequency circuit are connected by the wire, the illustration is abbreviate
- the waveguide opening 30 as a pattern for removing the ground conductor 4 on which the high-frequency circuit is mounted. Is forming. Further, at the tip of the waveguide opening 30, a short-circuited dielectric that extends in the stacking direction of the multilayer dielectric substrate 2 and has a length of about 1 ⁇ 4 (an odd multiple of the effective wavelength ⁇ g in the substrate) of the signal wave. A body waveguide 40 is formed.
- the dielectric waveguide 40 includes an inner-layer ground conductor 41 formed at a depth position of approximately ⁇ g / 4 (an odd multiple thereof) from the waveguide opening 30, a ground conductor 4 on which a high-frequency circuit is mounted, and an inner-layer ground conductor. And a dielectric waveguide having a short-circuited surface at the tip thereof.
- the dielectric waveguide includes a through-hole (ground via) 42 that connects to the inner-layer grounding conductor 41 and a dielectric disposed in a portion surrounded by the inner-layer ground conductor 41 and the plurality of through-holes 42. Function as.
- the oscillation circuit 10, the amplification circuit 11, the multiplication / amplification circuit 12 and the like are provided in the high-frequency storage case in which the single cavity 5 is formed by the multilayer dielectric substrate 2 and the shield cover member 3.
- a plurality of high-frequency circuits that operate in a plurality of operating frequency bands are arranged in a signal transmission direction (one-dimensionally in a column) across the waveguide opening 30 and the dielectric waveguide 40 to form a high-frequency module. .
- the oscillator 10 and the amplifier 11 that operate at the frequency f0 before the multiplication and the multiplication / amplification circuit 12 that operates at the frequency N ⁇ f0 after the multiplication are sandwiched between the waveguide opening 30 and the dielectric waveguide 40. , Separated.
- other high-frequency circuits may be arranged around the high-frequency circuits arranged in a column (lateral direction), and the high-frequency circuits may be arranged two-dimensionally while being vertically long.
- the cavity width L is not sufficiently smaller than about half of the wavelength corresponding to the operating frequency of the high frequency circuit (cutoff dimension).
- the signal propagates spatially and causes malfunction (unnecessary oscillation, frequency fluctuation) of the high frequency circuit due to feedback and coupling.
- the higher the frequency of the high-frequency signal to be handled the closer the above-mentioned cut-off dimension is to the physical size of the high-frequency circuit to be accommodated, so that spatial feedback and coupling are more likely to occur.
- the cavity width L is the length of the cavity 5 along the direction perpendicular to the arrangement direction of the plurality of high frequency circuits.
- the cavity width L is shorter than the dimension that is cut off with respect to the oscillator 10 and the amplifier 11 operating at the frequency f0 before multiplication, that is, the effective wavelength in the substrate of the signal wave of the frequency f0.
- a dimension smaller than approximately 1 ⁇ 2 of ⁇ (for example, 70 to 80% of 1 ⁇ 2 of wavelength ⁇ ) is selected. Since such a dimension selection has a frequency of 1 / N or less as compared with the case of selecting a dimension to be cut off for the multiplication / amplification circuit 12 that operates at a frequency of N ⁇ f0 after multiplication, the cut-off dimension. Can be realized physically easily.
- the frequency f0 and a signal in a frequency band lower than the frequency f0 cannot be propagated in the cavity 5, and thus the oscillator 10 and the amplifier 11 before multiplication are spatially isolated. Is ensured, and it is possible to prevent malfunction due to feedback and coupling of signals in the frequency f0 and a frequency band lower than the frequency f0.
- ⁇ g / 4 of the dielectric waveguide 40 is also set so as to function as a reflective reactance circuit for the high frequency signal of the multiplied frequency N ⁇ f0 output from the multiplication / amplification circuit 12. That is, ⁇ g is a wavelength corresponding to a high-frequency signal having a frequency N ⁇ f0.
- the waveguide opening 30 and the dielectric waveguide 40 function as a dielectric reflection stub for signals propagating through the cavity.
- the space is fed back from the multiplication / amplification circuit 12 in the cavity 5, and the N-th harmonic signal coupled to the oscillator 10 and the amplifier 11 before multiplication can be suppressed, and malfunction of the oscillator and the amplifier can be prevented.
- the dimensions of the waveguide opening 30 and the length of the short-circuited dielectric waveguide 40 are such that the higher-order mode resonance of the N-th harmonic signal occurs in the dielectric waveguide 40. It is desirable to select a dimension that does not occur (for example, less than ⁇ / 4 of the effective wavelength in the tube of the N harmonic signal). Further, it is desirable to arrange the waveguide opening 30 at a position where resonance does not occur in the target (multiplied) signal frequency band with the cavity wall.
- the cavity width L is set to a dimension that is cut off with respect to the frequency f0 before multiplication, signals in the frequency f0 and a frequency band lower than the frequency f0 propagate in the cavity 5.
- the waveguide opening 30 and the dielectric waveguide 40 that function as a reflective reactance circuit are provided for the high frequency signal of frequency 2 ⁇ f0 after multiplication, the high frequency of frequency 2 ⁇ f0 is provided. The signal is totally reflected and the pass characteristic is attenuated by 25 dB or more.
- FIG. 5 shows the propagation characteristics of the surface signal line 21 in the high-frequency module shown in FIGS. 1 to 3, where x indicates reflection characteristics and ⁇ indicates pass characteristics.
- the multiplier / amplifier circuit 12 is a circuit that inputs the signal of the frequency f0 output from the amplifier circuit 11 via the surface layer signal line 21 and amplifies the signal by multiplying it by N. Therefore, the surface layer signal line 21 has at least a frequency. Although it is necessary to have good pass characteristics with respect to the signal of f0, as shown in FIG. 5, as the propagation characteristics of the surface layer signal line 21, good pass characteristics are obtained over each frequency range.
- the high-frequency storage case according to the present embodiment includes the waveguide opening 30 and the short-circuited dielectric waveguide 40, and the waveguide opening 30 and the short-circuited dielectric waveguide 40. Is operated as a reflection circuit for signals propagating through the cavity, so that a plurality of low-cost and simple configurations using a single cavity can be used without using expensive seal rings, lids, and feedthroughs. Spatial isolation between high-frequency circuits can be ensured.
- the source oscillation chip and the multiplication chip are divided and laid out with the reflection circuit including the waveguide opening 30 and the short-circuited dielectric waveguide 40 interposed therebetween. Since isolation between chips can be ensured, spatial feedback of the transmission wave (multiplied wave) to the source oscillation chip can be suppressed. That is, an oscillator or the like can be expected to operate stably without being affected by the space load because its fundamental wave is cut off and the multiplied wave is cut off by the reflection circuit.
- the oscillation circuit and the multiplication circuit are employed as the plurality of high-frequency circuits housed in the single cavity 5.
- the operating frequency between the high-frequency circuits is a natural number multiple.
- the first and second high-frequency circuits having different operating frequency bands are not limited to this, and are configured to be separated from each other with the reflection circuit including the waveguide opening 30 and the short-circuited dielectric waveguide 40 interposed therebetween. Also good.
- the present invention is applied to the high frequency module configured to accommodate the high frequency circuit in the IC mounting recess 6 formed in the multilayer dielectric substrate 2.
- the present invention can also be applied to a high-frequency module having a configuration in which a high-frequency circuit is mounted on the surface layer of a flat multilayer dielectric substrate 2 that does not have 6.
- the cavity 5 is formed by the ground conductor formed on the surface layer of the multilayer dielectric substrate 2 on which the high-frequency circuit is mounted and the shield cover 3. Can do.
- the high-frequency storage case of this embodiment is effective in securing isolation between stages of a multistage amplifier chip where spatial feedback becomes a problem due to cascade connection. That is, in this case, two or more amplifier circuits operating in the same frequency band are sandwiched in a single cavity 5 with a reflection circuit composed of a waveguide opening 30 and a short-circuited dielectric waveguide 40 interposed therebetween. By arranging them separately, it is possible to easily secure isolation between the amplifier circuits in which spatial feedback is a problem due to cascade connection, and anti-oscillation can be expected.
- the high-frequency storage case and the high-frequency module according to the present invention are useful when a plurality of high-frequency circuits operating in different frequency bands are mounted.
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Abstract
Description
2 多層誘電体基板
3 シールド蓋材
4 接地導体
5 キャビティ
6 IC搭載凹部
7 表層接地導体
8 スルーホール
10 発振回路
11 増幅回路
12 逓倍・増幅回路
20 ワイヤ
21 表層信号線路
22 導体パッド
30 導波管開口
40 先端短絡誘電体導波管
41 内層接地導体
42 スルーホール
Claims (5)
- 多層誘電体基板上に搭載する複数の高周波回路を収納する高周波収納ケースにおいて、
少なくとも、多層誘電体基板に形成されて前記複数の高周波回路を信号伝搬方向に配列して搭載する接地導体と、前記複数の高周波回路を空間的に覆うシールド蓋材と、を電気的に接続して構成した電磁シールドによって形成され、かつ前記複数の高周波回路の配置方向と垂直となる方向の長さが、前記高周波回路から発生される第1の信号波の基板内実効波長の1/2より短い寸法を有するキャビティと、
高周波回路を搭載する前記接地導体上に形成され、前記キャビティに電気的に結合する導波管開口と、
前記導波管開口に接続され、多層誘電体基板の積層方向に形成された、前記高周波回路から発生される前記第1の信号波の周波数のN倍(N≧2)である第2の信号波の基板内実効波長の略1/4の長さを有する先端短絡の誘電体導波管と、
を備えることを特徴とする高周波収納ケース。 - 前記キャビティは、前記接地導体と、前記シールド蓋材と、前記多層誘電体基板の表面の前記シールド蓋材の当接面に形成される表層接地導体と、表層接地導体と前記複数の高周波回路を搭載する接地導体とを接続するスルーホールとを電気的に接続することにより構成される請求項1に記載の高周波収納ケース。
- 前記誘電体導波管は、内層接地導体と、前記接地導体および内層接地導体に接続される複数のスルーホールとにより構成されることを特徴とする請求項1または2に記載の高周波収納ケース。
- 請求項1~3の何れか一つに記載の高周波収納ケースと、
前記第1の信号波を発生する前記高周波回路としての発振回路と、前記発振回路から発生される第1の信号波をN逓倍し、前記第2の信号波を発生する前記高周波回路としての逓倍回路と、
を備え、前記発振回路と逓倍回路とを前記導波管開口を挟んで前記キャビティ内に分離配置したことを特徴とする高周波モジュール。 - 請求項1~3の何れか一つに記載の高周波収納ケースと、
前記導波管開口および先端短絡誘電体導波管が反射回路として機能する信号周波数帯を増幅する、前記高周波回路としての2つ以上の増幅回路と、
を備え、前記各増幅回路を前記導波管開口を挟んで前記キャビティ内に分離配置したことを特徴とする高周波モジュール。
Priority Applications (4)
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EP09746417.6A EP2284881B1 (en) | 2008-05-12 | 2009-02-26 | High frequency module including a storing case and a plurality of high frequency circuits |
JP2010511912A JP5047357B2 (ja) | 2008-05-12 | 2009-02-26 | 高周波収納ケースおよび高周波モジュール |
US12/918,239 US8035994B2 (en) | 2008-05-12 | 2009-02-26 | High frequency storing case and high frequency module |
CN2009801183562A CN102027590B (zh) | 2008-05-12 | 2009-02-26 | 高频收纳盒及高频模块 |
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JP2008-124919 | 2008-05-12 | ||
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JP2015149649A (ja) | 2014-02-07 | 2015-08-20 | 株式会社東芝 | ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 |
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CN112259532B (zh) * | 2020-09-30 | 2022-12-13 | 中国电子科技集团公司第十三研究所 | 微波毫米波封装器件及其制作方法 |
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US8035994B2 (en) | 2011-10-11 |
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EP2284881A4 (en) | 2014-08-27 |
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