JP5047357B2 - 高周波収納ケースおよび高周波モジュール - Google Patents
高周波収納ケースおよび高周波モジュール Download PDFInfo
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- 239000004020 conductor Substances 0.000 claims description 34
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- 230000008878 coupling Effects 0.000 description 3
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- 238000005859 coupling reaction Methods 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
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- 230000002285 radioactive effect Effects 0.000 description 1
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Description
2 多層誘電体基板
3 シールド蓋材
4 接地導体
5 キャビティ
6 IC搭載凹部
7 表層接地導体
8 スルーホール
10 発振回路
11 増幅回路
12 逓倍・増幅回路
20 ワイヤ
21 表層信号線路
22 導体パッド
30 導波管開口
40 先端短絡誘電体導波管
41 内層接地導体
42 スルーホール
Claims (5)
- 多層誘電体基板上に搭載する複数の高周波回路を収納する高周波収納ケースにおいて、
少なくとも、多層誘電体基板に形成されて前記複数の高周波回路を信号伝搬方向に配列して搭載する接地導体と、前記複数の高周波回路を空間的に覆うシールド蓋材と、を電気的に接続して構成した電磁シールドによって形成され、かつ前記複数の高周波回路の配置方向と垂直となる方向の長さが、前記高周波回路から発生される第1の信号波の基板内実効波長の1/2より短い寸法を有するキャビティと、
高周波回路を搭載する前記接地導体上に形成され、前記キャビティに電気的に結合する導波管開口と、
前記導波管開口に接続され、多層誘電体基板の積層方向に形成された、前記高周波回路から発生される前記第1の信号波の周波数のN倍(N≧2)である第2の信号波の基板内実効波長の略1/4の長さを有する先端短絡の誘電体導波管と、
を備えることを特徴とする高周波収納ケース。 - 前記キャビティは、前記接地導体と、前記シールド蓋材と、前記多層誘電体基板の表面の前記シールド蓋材の当接面に形成される表層接地導体と、表層接地導体と前記複数の高周波回路を搭載する接地導体とを接続するスルーホールとを電気的に接続することにより構成される請求項1に記載の高周波収納ケース。
- 前記誘電体導波管は、内層接地導体と、前記接地導体および内層接地導体に接続される複数のスルーホールとにより構成されることを特徴とする請求項1または2に記載の高周波収納ケース。
- 請求項1〜3の何れか一つに記載の高周波収納ケースと、
前記第1の信号波を発生する前記高周波回路としての発振回路と、前記発振回路から発生される第1の信号波をN逓倍し、前記第2の信号波を発生する前記高周波回路としての逓倍回路と、
を備え、前記発振回路と逓倍回路とを前記導波管開口を挟んで前記キャビティ内に分離配置したことを特徴とする高周波モジュール。 - 請求項1〜3の何れか一つに記載の高周波収納ケースと、
前記導波管開口および先端短絡誘電体導波管が反射回路として機能する信号周波数帯を増幅する、前記高周波回路としての2つ以上の増幅回路と、
を備え、前記各増幅回路を前記導波管開口を挟んで前記キャビティ内に分離配置したことを特徴とする高周波モジュール。
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JP2010511912A JP5047357B2 (ja) | 2008-05-12 | 2009-02-26 | 高周波収納ケースおよび高周波モジュール |
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JP2008124919 | 2008-05-12 | ||
JP2008124919 | 2008-05-12 | ||
PCT/JP2009/053593 WO2009139210A1 (ja) | 2008-05-12 | 2009-02-26 | 高周波収納ケースおよび高周波モジュール |
JP2010511912A JP5047357B2 (ja) | 2008-05-12 | 2009-02-26 | 高周波収納ケースおよび高周波モジュール |
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JPWO2009139210A1 JPWO2009139210A1 (ja) | 2011-09-15 |
JP5047357B2 true JP5047357B2 (ja) | 2012-10-10 |
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US (1) | US8035994B2 (ja) |
EP (1) | EP2284881B1 (ja) |
JP (1) | JP5047357B2 (ja) |
CN (1) | CN102027590B (ja) |
WO (1) | WO2009139210A1 (ja) |
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KR20150075347A (ko) * | 2013-12-25 | 2015-07-03 | 가부시끼가이샤 도시바 | 반도체 패키지, 반도체 모듈 및 반도체 디바이스 |
JP2015149649A (ja) | 2014-02-07 | 2015-08-20 | 株式会社東芝 | ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 |
JP2015149650A (ja) | 2014-02-07 | 2015-08-20 | 株式会社東芝 | ミリ波帯用半導体パッケージおよびミリ波帯用半導体装置 |
CN106796924B (zh) * | 2014-08-26 | 2019-02-26 | 三菱电机株式会社 | 高频模块 |
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