WO2009134029A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

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Publication number
WO2009134029A3
WO2009134029A3 PCT/KR2009/001993 KR2009001993W WO2009134029A3 WO 2009134029 A3 WO2009134029 A3 WO 2009134029A3 KR 2009001993 W KR2009001993 W KR 2009001993W WO 2009134029 A3 WO2009134029 A3 WO 2009134029A3
Authority
WO
WIPO (PCT)
Prior art keywords
emitting device
semiconductor light
semiconductor layer
conductive semiconductor
layer
Prior art date
Application number
PCT/KR2009/001993
Other languages
English (en)
French (fr)
Other versions
WO2009134029A2 (ko
Inventor
임우식
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to EP09738935.7A priority Critical patent/EP2290707B1/en
Priority to CN200980120377.8A priority patent/CN102047453B/zh
Publication of WO2009134029A2 publication Critical patent/WO2009134029A2/ko
Publication of WO2009134029A3 publication Critical patent/WO2009134029A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

실시 예는 반도체 발광소자에 관한 것이다. 실시 예에 따른 반도체 발광소자는 제1도전형 반도체층; 상기 제1도전형 반도체층 위에 활성층; 상기 활성층 위에 제2도전형 반도체층; 상기 제1도전형 반도체층의 아래에 소정 형상의 패턴을 포함하는 제1전극; 상기 제1전극의 패턴 사이에 질화물 반도체층을 포함한다.
PCT/KR2009/001993 2008-04-30 2009-04-16 반도체 발광소자 WO2009134029A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP09738935.7A EP2290707B1 (en) 2008-04-30 2009-04-16 Semiconductor light-emitting device
CN200980120377.8A CN102047453B (zh) 2008-04-30 2009-04-16 半导体发光器件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0040747 2008-04-30
KR1020080040747A KR101449035B1 (ko) 2008-04-30 2008-04-30 반도체 발광소자

Publications (2)

Publication Number Publication Date
WO2009134029A2 WO2009134029A2 (ko) 2009-11-05
WO2009134029A3 true WO2009134029A3 (ko) 2010-01-21

Family

ID=41255528

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001993 WO2009134029A2 (ko) 2008-04-30 2009-04-16 반도체 발광소자

Country Status (5)

Country Link
US (1) US8415689B2 (ko)
EP (1) EP2290707B1 (ko)
KR (1) KR101449035B1 (ko)
CN (1) CN102047453B (ko)
WO (1) WO2009134029A2 (ko)

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KR20110052131A (ko) * 2009-11-12 2011-05-18 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP5197654B2 (ja) 2010-03-09 2013-05-15 株式会社東芝 半導体発光装置及びその製造方法
KR101081135B1 (ko) 2010-03-15 2011-11-07 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR20110123118A (ko) 2010-05-06 2011-11-14 삼성전자주식회사 패터닝된 발광부를 구비한 수직형 발광소자
KR101441833B1 (ko) 2010-09-30 2014-09-18 도와 일렉트로닉스 가부시키가이샤 Ⅲ족 질화물 반도체 발광소자 및 그 제조 방법
CN102054914B (zh) 2010-11-09 2013-09-04 映瑞光电科技(上海)有限公司 发光二极管及其制造方法、发光装置
CN102054913B (zh) * 2010-11-09 2013-07-10 映瑞光电科技(上海)有限公司 发光二极管及其制造方法、发光装置
KR101973608B1 (ko) * 2011-06-30 2019-04-29 엘지이노텍 주식회사 발광소자
TWI557941B (zh) * 2011-08-04 2016-11-11 晶元光電股份有限公司 光電元件及其製造方法
US9490239B2 (en) 2011-08-31 2016-11-08 Micron Technology, Inc. Solid state transducers with state detection, and associated systems and methods
US8809897B2 (en) 2011-08-31 2014-08-19 Micron Technology, Inc. Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods
TWD163754S (zh) * 2014-01-28 2014-10-21 璨圓光電股份有限公司 發光二極體晶片之部分
TWD173887S (zh) * 2014-01-28 2016-02-21 璨圓光電股份有限公司 發光二極體晶片之部分
USD745474S1 (en) * 2014-01-28 2015-12-15 Formosa Epitaxy Incorporation Light emitting diode chip
TWD173888S (zh) * 2014-01-28 2016-02-21 璨圓光電股份有限公司 發光二極體晶片之部分
TWD173883S (zh) * 2014-01-28 2016-02-21 璨圓光電股份有限公司 發光二極體晶片之部分
USD745472S1 (en) * 2014-01-28 2015-12-15 Formosa Epitaxy Incorporation Light emitting diode chip
USD757663S1 (en) * 2014-01-28 2016-05-31 Formosa Epitaxy Incorporation Light emitting diode chip
TWD164809S (zh) * 2014-01-28 2014-12-11 璨圓光電股份有限公司 發光二極體晶片之部分
KR20210000351A (ko) 2019-06-24 2021-01-05 삼성전자주식회사 반도체 발광소자 및 디스플레이 장치
CN112670386B (zh) * 2020-12-31 2022-09-20 深圳第三代半导体研究院 一种发光二极管及其制造方法
CN112614921A (zh) * 2020-12-31 2021-04-06 深圳第三代半导体研究院 一种发光二极管及其制造方法
CN114695618B (zh) * 2022-05-30 2022-09-02 惠科股份有限公司 显示面板及其制作方法

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KR20050013042A (ko) * 2003-11-18 2005-02-02 주식회사 이츠웰 발광 다이오드와 그 제조 방법 및 사파이어 기판의 식각방법
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Also Published As

Publication number Publication date
EP2290707B1 (en) 2018-10-31
WO2009134029A2 (ko) 2009-11-05
EP2290707A2 (en) 2011-03-02
CN102047453A (zh) 2011-05-04
US20090272994A1 (en) 2009-11-05
KR20090114878A (ko) 2009-11-04
CN102047453B (zh) 2014-04-30
KR101449035B1 (ko) 2014-10-08
US8415689B2 (en) 2013-04-09
EP2290707A4 (en) 2014-06-18

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