WO2009109110A1 - 铜铟硫半导体纳米粒子及其制备方法 - Google Patents

铜铟硫半导体纳米粒子及其制备方法 Download PDF

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WO2009109110A1
WO2009109110A1 PCT/CN2009/000237 CN2009000237W WO2009109110A1 WO 2009109110 A1 WO2009109110 A1 WO 2009109110A1 CN 2009000237 W CN2009000237 W CN 2009000237W WO 2009109110 A1 WO2009109110 A1 WO 2009109110A1
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copper
indium
indium sulfide
copper indium
salt
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PCT/CN2009/000237
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English (en)
French (fr)
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钟海政
李永舫
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拜耳技术工程{上海}有限公司
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Priority to CN200980107584XA priority Critical patent/CN102105400A/zh
Priority to JP2010549003A priority patent/JP2011513181A/ja
Priority to EP09718518.5A priority patent/EP2263977A4/en
Priority to US12/920,665 priority patent/US20110039104A1/en
Publication of WO2009109110A1 publication Critical patent/WO2009109110A1/zh
Priority to IL207814A priority patent/IL207814A0/en

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]

Definitions

  • the invention relates to a copper indium sulfide semiconductor nano particle and a preparation method thereof. Background technique
  • nanomaterial science has become an indispensable and important field in the development of materials science.
  • the progress of nanomaterial research is bound to push many disciplines such as physics, chemistry and biology to a new level, and it will also bring new opportunities for technological research in the 21st century.
  • solar cells have attracted worldwide attention as a renewable and clean energy source.
  • the application of nanomaterials and technologies to solar cells is likely to greatly increase the conversion efficiency of existing solar cells, reduce the production cost of solar cells, and promote the development of new solar cells. In this case, developing nanomaterials that can be used in solar cells has become a new challenge.
  • CuInS 2 belongs to the im-vi 2 semiconductor compound material, has a chalcopyrite structure, has a forbidden band width of 1.50 eV, has a large absorption coefficient, and is a good solar energy because CuInS 2 does not contain any toxic components. Battery material.
  • the conversion efficiency of the thin film solar cell based on CuInS 2 has reached 14.4%.
  • the main processes for preparing such solar cells are chemical vapor deposition, magnetron sputtering, electrochemical deposition and the like. However, these methods have higher requirements on conditions, complicated preparation processes, and higher costs.
  • the synthesis of CuInS 2 nanoparticles, the process of film formation by spin coating, and then sintering will be a good solution to the industrialization of CuInS 2 solar cells.
  • the exciton radius of the CuInS 2 semiconductor obtained by theoretical calculation is 4. l nm, so it is expected that when the size of the semiconductor nanoparticle of CuInS 2 is equivalent to the exciton radius, it exhibits a strong quantum confinement effect. Should.
  • the preparation method of the copper indium sulfide semiconductor nanoparticle of the invention comprises the following steps: a) adding a copper salt, an indium salt and an alkyl mercaptan to a non-polar organic solvent, and then heating, stirring and dissolving under an inert atmosphere; Until a dark red colloidal solution is obtained;
  • step b) The colloidal solution obtained in the step a) is cooled to room temperature, a polar solvent is added, and copper indium sulfide semiconductor nanoparticles are obtained by centrifugation; further, the copper indium sulfide semiconductor nanoparticle powder can be obtained by washing and vacuum drying.
  • the copper indium sulfide semiconductor nanoparticles are tetragonal and have a particle size of 2 to 10 nm. Its emission spectrum is in the near infrared region of 600 ⁇ 800 nm.
  • Figure 1 Absorption and fluorescence spectra of CuInS 2 nanoparticles obtained at different reaction times at a temperature of 240 ° C in Example 1 of the present invention; wherein la is the absorption spectrum and Figure lb is the fluorescence spectrum.
  • FIG. 2 TEM images CuInS 2 nanoparticles prepared in Example 1 of the present invention, Figure 2;
  • Figure 2a is a TEM of the reaction CuInS 2 nanoparticles prepared for 2 hours at a temperature of 240 ° C, the temperature in FIG. 2b
  • Fig. 3 is an X-ray diffraction chart of a CuInS 2 nanoparticle powder prepared by reacting at a temperature of 240 ° C for 2 hours in Example 1 of the present invention. detailed description
  • the method for preparing the scale copper indium sulfide semiconductor nano particles of the invention adopts low cost copper salt, indium salt and alkyl mercaptan as raw materials, and prepares a ternary particle size controllable by simple solution reaction and heating pyrolysis method.
  • the method has the advantages of simple preparation process, low cost, non-toxicity, large amount of preparation, easy control and the like.
  • the preparation method of the copper indium sulfide semiconductor nanoparticles of the invention comprises the following steps:
  • step b) The colloidal solution obtained in the step a) is cooled to room temperature, a polar solvent is added, and copper indium sulfide semiconductor nanoparticles are obtained by centrifugal sedimentation; the copper indium sulfide semiconductor nanoparticle powder can be further obtained by washing and vacuum drying.
  • the yield of the preparation process of the invention is as high as 90%.
  • the copper indium sulfide semiconductor nanoparticles of the invention have a tetragonal crystal shape with a particle size of 2 to 10 nm, and the emitted light is in the near infrared region of 600 to 800 nm.
  • the copper indium sulfide semiconductor nanoparticles of the present invention have a spherical, triangular, sheet-like and/or rod-like morphology,
  • the molar ratio of the copper salt to the indium salt is preferably from 1 to 2: 1 - 2 , and the molar ratio of the alkyl alcohol is preferably greater than the molar content of the copper salt or the indium salt, preferably mole.
  • the ratio is 100 to 1. 5: 1, more preferably 50 to 2: 1, particularly preferably 12 to 3:1.
  • the temperature of the heating and agitation described in the step a) is preferably between 100 ° C and 350 ° C, more preferably between 200 ° C and 300 ° C, particularly preferably between 240 ° C and 270 ° C, and the time is preferably 10 Between 30 minutes and more preferably between 20 minutes and 6 hours, particularly preferably between 1 hour and 2 hours.
  • the cleaning is performed by dispersing the obtained copper indium sulfide semiconductor nanoparticles in a solvent of n-hexane, chloroform or terpene, and then adding sterol to perform centrifugal sedimentation, and the cleaning may be repeated until the desired copper indium sulfide semiconductor is obtained. Nanoparticles.
  • the copper salt may be cuprous acetate, copper acetate, copper chloride, cuprous chloride, copper sulfate or any mixture thereof.
  • the indium salt may be indium acetate, indium chloride, indium sulfate, indium nitrate or any mixture therebetween.
  • the alkyl mercaptan may be a thiol having one or more mercapto functional groups or a mixture of the mercaptans having one or more mercapto functional groups.
  • the thiol having a mercapto functional group is preferably an octyl mercaptan, an isooctyl alcohol, a dodecyl mercaptan, a hexadecyl mercaptan or an octadecyl mercaptan.
  • the thiol having one or more mercapto functional groups is preferably 1,8-octanedithiol or 1,6-octanedithiol or the like.
  • the nonpolar organic solvent is preferably octadecene, paraffin, diphenyl ether, dioctyl ether, octadecane or any mixed solvent therebetween.
  • the polar solvent is preferably decyl alcohol, ethanol, isopropanol, acetone or any mixed solvent therebetween.
  • the inert gas is preferably argon or nitrogen or the like.
  • the copper indium sulfide semiconductor nanoparticles obtained by the preparation method of the invention can be applied to the fields of biomarkers, light emitting diodes, thin film solar cells, polymer solar cells and the like.
  • the invention has the following characteristics:
  • the present invention does not require the preparation of a precursor containing any toxic substance in advance, but uses an inexpensive copper salt and an indium salt and an alkyl mercaptan to carry out the reaction, and has a simple preparation process, is easy to control, and is easy to realize mass production.
  • the ternary semiconductor copper indium sulfide (CuInS 2 ) nanoparticles obtained in the present invention have a fluorescence quantum efficiency close to 10% and an emission spectrum in the near-infrared region. This nanoparticle can be dissolved into the aqueous phase by ligand exchange.
  • the ternary semiconductor copper indium sulfide (CuInS 2 ) nanoparticles obtained in the present invention can be dispersed in a non-polar solvent for a long period of time, and the copper indium sulfide semiconductor nanoparticle powder obtained by vacuum drying can be dispersed again into a non-polar solvent. .
  • a mixture of cuprous acetate, indium acetate and dodecyl mercaptan and 50 ml of octadecene were added to a 100 ml three-necked flask in which the molar ratio of cuprous acetate, indium acetate and dodecyl mercaptan was 1 : 1: 10, argon or nitrogen for 30 minutes to remove the air, at 240 ° C
  • the mixture was heated and stirred to obtain a clear pale yellow solution, and then the mixed solution was continuously heated at 240 ° C.
  • the color of the colloidal solution gradually changed from light yellow to deep red, and the total heating reaction time was 2 hours.
  • the colloidal solution obtained by the above reaction was cooled to room temperature, 100 ml of acetone was added, and the mixture was centrifuged to remove the upper layer solution to obtain copper indium sulfide semiconductor nanoparticles. through
  • the specific conditions are shown in Table 1).
  • the absorption and fluorescence spectroscopy tests show that the absorption and fluorescence spectra of the obtained CuInS 2 semiconductor nanoparticles are modulatable (the absorption and fluorescence spectra are shown in Figure la, lb, respectively).
  • the precipitate was redissolved in toluene, and decyl alcohol, which is 3 times the volume of benzene, was added, and then sedimented by centrifugation, and the above process was repeated three times. Finally, the cleaned precipitate was vacuum dried to obtain a powder of black copper indium sulfide nanoparticles. The yield was 90%.
  • the mixture copper acetate, indium acetate, and hexadecyl mercaptan and 50 ml of octadecene were added to 2 5 0 ml three-necked flask, in which copper acetate, indium acetate, and hexadecyl mercaptan was 1 molar ratio of : 1: 100, argon or nitrogen for 30 minutes to remove the air, at 240. Stirring under C gave a clear, pale yellow solution which was then constant at 240.
  • the copper-indium-sulfur semiconductor having an average particle diameter of 3.5 nm was obtained by centrifugation to obtain a copper-indium-sulfur semiconductor having an average particle diameter of 3.5 nm.
  • a mixture of cuprous chloride, indium acetate and dodecyl mercaptan and 50 ml of octadecene were added to a 50 ml three-necked flask in which the molar ratio of cuprous chloride, indium acetate and dodecyl mercaptan was For 1: 1:10, remove the air by argon or nitrogen for 30 minutes at 240. Stirring under C gave a clear, pale yellow solution which was then constant at 240. The mixed solution was further heated at C, and the total heating reaction time was 2 hours. The obtained colloidal solution was cooled to room temperature, 100 ml of acetone was added, and copper indium sulfide semiconductor nanoparticles having an average particle diameter of 2.5 nm were obtained by centrifugal sedimentation.

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Description

铜铟硫半导体纳米粒子及其制备方法
技术领域
本发明涉及一种铜铟硫半导体纳米粒子及其制备方法。 背景技术
随着纳米科技的发展， 纳米材料科学已经成为当前材料科学发展 的一个不可或缺的重要领域。 纳米材料研究的进展势必把物理、化学、 生物等许多学科推向一个新的层次，同时也会给 21世纪技术研究带来 新的机遇。 随着能源问题的日益紧迫， 太阳能电池作为一种可再生的 清洁能源引起了全世界的广泛关注。 将纳米材料和技术应用于太阳能 电池中有可能能够大大提高现有的太阳能电池的转化效率， 降低太阳 能电池的生产成本， 推动新型太阳能电池的开发。 在这种情况下， 开 发可用于太阳能电池的纳米材料成为一个新的挑战。
CuInS2属于 i-m-vi2半导体化合物材料， 具有黄铜矿结构， 禁带 宽度为 1. 50 eV, 吸收系数较大， 并且由于 CuInS2不含任何有毒的成 分， 因此是一种很好的太阳能电池材料。 基于 CuInS2的薄膜太阳能电 池转换效率已经达到 14. 4 %。 目前， 制备这种太阳能电池的主要工艺 有化学气相沉积， 磁控溅射， 电化学沉积等方法。 然而， 这些方法对 条件的要求比较高， 制备工艺复杂， 成本比较高。
首先合成 CuInS2纳米粒子， 通过旋涂成膜、 然后烧结的工艺将是 一个很好解决 CuInS2太阳能电池工业化的路线。 此外， 通过理论计算 得到的 CuInS2半导体的激子半径为 4. l nm， 所以预期当 CuInS2的半导 体纳米粒子的尺寸与其激子半径相当时会表现出很强的量子限域效 应。 这些性质使得 CuInS2的半导体纳米粒子在聚合物太阳能电池、 染 料敏化太阳能电池、 生物标记、 化学检测中具有潜在的应用。
但是由于 CuInS2三元半导体纳米粒子的合成制备比较困难， 目前 只有少数报道。 例如美国的 S. L. Castro 等人先制备
(PPh3)2CuIn(SEt)4前驱体， 然后在十六烷基硫醇中裂解该前驱体， 得 到了粒径大小为 2~ 4nm的 CuInS2半导体纳米粒子（Castro, S. L. et al. J. Phys. Chem. B 2004, 108， 12429 ) 。 美国的 Nairn 等人利 用紫外灯光解类似的前驱体也得到了粒径为 2 nm左右的 CuInS2半导 体纳米粒子 （Nairn, J. J. et al. Nano Lett. 2006， 6, 1218 ) 。 Du Wenmin等人利用水热技术制备了粒径大小在 13~ 17 nm的 CuInS2 的半导体纳米粒子 (Du et al. Chem. Eur. J. 2007, 13, 8840, 8846 ) 。 但是目前的制备方法存在几个缺陷： （1)合成的步骤复杂， 大多需要预 先合成前驱体， 不适合大规模的制备； （2)合成中使用的反应物中涉及 有毒物质；（3)合成的纳米粒子性能较差，粒径大小和光学性质不可调。 发明内容
本发明的目的是提供一种铜铟硫半导体纳米粒子， 以及制备这种 铜铟¾半导体纳米粒子的方法。
本发明的铜铟硫半导体纳米粒子的制备方法包括以下步骤： a)将铜盐、 铟盐和烷基硫醇加入到非极性的有机溶剂中， 然后在 惰性气氛下， 加热搅拌、 溶解， 直至得到深红色的胶体溶液；
b)将步骤 a)得到的胶体溶液冷却到室温， 加入极性溶剂， 通过离 心沉降得到铜铟硫半导体纳米粒子； 可进一步进行清洗、 真空干燥得 到铜铟硫半导体纳米粒子粉末。
所述的铜铟硫半导体纳米粒子为四方晶型，粒径大小为 2~ 10nm, 其发射光谱在 600 ~ 800 nm的近红外区。 附图说明
图 1.本发明实施例 1中在温度为 240°C下不同反应时间得到的 CuInS2纳米粒子的吸收光谱和荧光光谱； 其中图 la是吸收光谱， 图 lb是荧光光谱。
图 2.本发明实施例 1制备的 CuInS2纳米粒子的透射电镜照片；其 中图 2a是在温度为 240°C下反应 2小时制备得到的 CuInS2纳米粒子的 透射电镜照片，图 2b是在温度为 240°C下反应 4小时制备得到的 CuInS2 纳米粒子的透射电镜照片。
图 3.本发明实施例 1中在温度为 240°C下反应 2小时制备得到的 CuInS2纳米粒子粉末的 X射线衍射图。 具体实施方式
本发明制备这秤铜铟硫半导体纳米粒子的方法采用成本低廉的铜 盐、 铟盐和烷基硫醇作为原料， 通过简单的溶液反应和加热热解的方 法制备粒径尺寸可控的三元半导体铜铟硫 ( CuInS2 ) 纳米粒子。 该方 法具有制备过程筒单、 成本低、 无毒、 可以大量制备、 容易控制等优 点。
本发明的铜铟硫半导体纳米粒子的制备方法包括以下步骤：
a)将铜盐、 铟盐和烷基硫醇加入到非极性的有机溶剂中， 然后在 惰性气氛下， 加热搅拌、 溶解， 直至得到深红色的胶体溶液；
b)将步骤 a)得到的胶体溶液冷却到室温， 加入极性溶剂， 通过离 心沉降得到铜铟硫半导体纳米粒子； 可进一步进行清洗、 真空千燥得 到铜铟硫半导体纳米粒子粉末。 本发明的制备方法的产率高达 90 %。
本发明的铜铟硫半导体纳米粒子为四方晶型， 粒径大小为 2 ~ 10 nm, 其发射光 i瞽在 600 ~ 800 nm的近红外区。
优选地， 本发明的铜铟硫半导体纳米粒子具有球形、 三角形、 片 状和 /或棒状等形貌，
在本发明方法的步骤 a)中，所述的铜盐、铟盐的摩尔比优选为 1 ~ 2： 1 - 2 , 烷基疏醇摩尔含量优选大于铜盐或铟盐的摩尔含量, 优选摩 尔比为 100 ~ 1. 5： 1、 更优选 50 ~ 2： 1、 特别优选 12 ~ 3： 1。
步骤 a)所述的加热搅拌的温度优选为 100°C到 350°C之间、 更优 选 200 °C到 300°C之间、 特别优选 240°C到 270°C之间， 时间优选为 10 分钟到 30小时之间、 更优选 20分钟到 6小时之间、 特别优选 1小时 到 2小时之间。
所述的清洗优选是将得到的铜铟硫半导体纳米粒子分散到正己 烷、 氯仿或曱苯溶剂中， 再加入曱醇进行离心沉降的过程， 可反复进 行清洗直至得到所需的铜铟硫半导体纳米粒子。
所述的铜盐可以是醋酸亚铜、 醋酸铜、 氯化铜、 氯化亚铜、 硫酸 铜或它们之间的任意混合物等。
所述的铟盐可以是醋酸铟、 氯化铟、 硫酸铟、 硝酸铟或它们之间 的任意混合物等。
所述的烷基硫醇可以是带有一个或者一个以上巯基官能团的硫 醇， 或者是所述带有一个或者一个以上巯基官能团的硫醇的混合物。
所述的带有一个巯基官能团的硫醇优选为辛基硫醇、异辛基疏醇、 十二烷基硫醇、 十六烷基硫醇或十八烷基硫醇等。
所述的带有一个以上巯基官能团的硫醇优选为 1, 8-辛二硫醇或 1， 6-辛二硫醇等。 所述的非极性的有机溶剂优选为十八烯、 石蜡、 二苯醚、 二辛醚、 十八烷或它们之间的任意混合溶剂等。
所述的极性溶剂优选为曱醇、 乙醇、 异丙醇、 丙酮或它们之间的 任意混合溶剂等。
所述的惰性气体优选为氩气或氮气等。
本发明制备方法得到的铜铟硫半导体纳米粒子可以应用在生物标 记、 发光二极管、 薄膜太阳能电池、 聚合物太阳能电池等领域。
本发明与现有技术相比较具有以下特点：
1.本发明不用预先制备含有任何有毒物质的前驱体， 而是使用廉 价的铜盐和铟盐以及烷基硫醇进行反应， 并且制备工艺简单， 容易控 制， 容易实现大规模生产。
2.本发明中只需要控制反应的时间和温度， 就可以得到具有不同 的吸收波长范围的三元半导体铜铟硫（CuInS2 ) 纳米粒子。
3.本发明中得到的三元半导体铜铟硫（CuInS2 ) 纳米粒子的荧光 量子效率接近 10 % , 并且其发射光谱在近红外区域中。 通过配体交换 这种纳米粒子可以溶解到水相中。
4.本发明中得到的三元半导体铜铟硫（CuInS2 ) 纳米粒子可以长 期分散在非极性溶剂中， 并且真空干燥得到的铜铟硫半导体纳米粒子 粉末可以再次分散到非极性溶剂中。
以下实施例是对本发明的示例， 不应看作是对本发明的限定。 实施例 1. 制备（^11^2半导体纳米粒子
将醋酸亚铜、 醋酸铟和十二烷基硫醇的混合物和 50 ml十八烯加 入到 100 ml的三口烧瓶中， 其中醋酸亚铜、 醋酸铟和十二烷基硫醇的 摩尔比为 1 : 1： 10,通氩气或者氮气 30分钟排除其中的空气，在 240°C 下加热搅拌得到澄清的浅黄色溶液， 然后恒定在 240°C下继续加热该 混合溶液， 胶体溶液的颜色自浅黄色逐渐变化到深红色， 总加热反应 时间为 2小时。 将上述反应得到的胶体溶液冷却到室温， 加入 100ml 丙酮， 离心沉降， 去掉上层的溶液， 得到铜铟硫半导体纳米粒子。 通
I曰 j可以 ίιΙ
(其具体条件见表 1 ) 。 吸收光谱和荧光光谱测试表明得到的 CuInS2 半导体纳米粒子的吸收光谱和荧光光谱具有可调制性（其吸收光谱和 荧光光谱分别见图 la , lb ) 。 将沉淀再次溶解到甲苯中， 加入是曱苯 体积 3倍的曱醇， 再离心沉降， 重复上述过程三次， 最后将清洗干净 的沉淀物进行真空干燥， 得到黑色的铜铟硫纳米粒子的粉末， 产率为 90 %。 对得到的粉末样品进行 X射线衍射表征， 表明得到的铜铟硫纳 米粒子均具有四方晶体结构。 图 3给出的是总反应时间为 2小时得到 的铜铟硫纳米粒子的 X射线衍射图谱。
表 1
Figure imgf000008_0001
实 ^施例 2. 制备 CuInS2半导体纳米粒子
将醋酸铜、 醋酸铟和十六烷基硫醇的混合物和 25 ml十八烯加入 到 100 ml的三口烧瓶中， 其中醋酸铜、 醋酸铟和十六烷基硫醇的摩尔 比为 1 : 1： 10, 通氩气或者氮气 30分钟排除其中的空气， 在 270。C 下加热搅拌得到澄清的浅黄色溶液， 然后恒定在 270。C下继续加热该 混合溶液，总加热反应时间为 20分钟；将得到的胶体溶液冷却到室温， 加入 100ml丙酮， 通过离心沉降得到平均粒径为 3. 3 nm的铜铟硫半导 体纳米粒子。 实施例 3. 制备 CuInS2半导体纳米粒子
将醋酸铜、 醋酸铟和十六烷基硫醇的混合物和 50 ml十八烯加入 到 250 ml的三口烧瓶中， 其中醋酸铜、 醋酸铟和十六烷基硫醇的摩尔 比为 1 : 1： 100 , 通氩气或者氮气 30分钟排除其中的空气， 在 240。C 下加热搅拌得到澄清的浅黄色溶液， 然后恒定在 240。C下继续加热该 混合溶液得到黑色的溶胶， 总加热反应时间为 3小时； 将得到的胶体 溶液冷却到室温，加入 100ml丙酮，通过离心沉降得到平均粒径为 3. 5 纳米的铜铟硫半导体纳米粒子。 实施例 4. 制备 CuInS2半导体纳米粒子
将氯化亚铜、 醋酸铟和十二烷基硫醇的混合物和 50 ml十八烯加 入到 50 ml的三口烧瓶中， 其中氯化亚铜、 醋酸铟和十二烷基硫醇的 摩尔比为 1 : 1： 10，通氩气或者氮气 30分钟排除其中的空气，在 240。C 下加热搅拌得到澄清的浅黄色溶液， 然后恒定在 240。C下继续加热该 混合溶液， 总加热反应时间为 2小时， 将得到的胶体溶液冷却到室温， 加入 100ml丙酮， 通过离心沉降得到平均粒径为 2. 5纳米的铜铟硫半 导体纳米粒子。

Claims

权利要求书
1.一种铜铟硫半导体纳米粒子的制备方法， 其特征是， 该方法包 括以下步骤：
a)将铜盐、 铟盐和烷基硫醇加入到非极性有机溶剂中， 然后在惰 性气氛下， 加热搅拌、 溶解， 直至得到深红色的胶体溶液；
b)将步骤 a)得到的胶体溶液冷却到室温， 加入极性溶剂， 通过离 心沉降得到铜铟硫半导体纳米粒子。
2.根据权利要求 1所述的方法， 其特征是： 得到的铜铟硫半导体 纳米粒子进行进一步清洗、真空干燥得到铜铟硫半导体纳米粒子粉末。
3.根据权利要求 2所述的方法， 其特征是： 所述的清洗是将得到 的铜铟硫半导体纳米粒子分散到正己烷、 氯仿或曱苯溶剂中， 再加入 曱醇进行离心沉降的过程。
4.根据权利要求 1所述的方法， 其特征是： 步骤 a)所述的铜盐、 铟盐的摩尔比为 1 ~ 2： 1 - 2 , 烷基硫醇摩尔含量大于铜盐或铟盐的摩 尔含量。
5.根据权利要求 1所述的方法， 其特征是： 步骤 a)所述的加热搅 拌的温度是 100 ~ 350°C， 时间为 10分钟 ~ 30小时。
6.根据权利要求 1所述的方法， 其特征是： 所述的铜盐是醋酸亚 铜、 醋酸铜、 氯化铜、 氯化亚铜、 硫酸铜或它们之间的混合物。
7.根据权利要求 1所述的方法， 其特征是： 所述的铟盐是醋酸铟、 氯化铟、 硫酸铟、 硝酸铟或它们之间的混合物。
8.根据权利要求 1所述的方法， 其特征是： 所述的烷基硫醇是带 有一个或者一个以上巯基官能团的硫醇， 或者是带有一个或者一个以 上巯基官能团的硫醇的混合物。
9.根据权利要求 1所述的方法， 其特征是： 所述的非极性有机溶 剂是十八烯、 石蜡、 二苯醚、 二辛醚、 十八烷或它们之间的混合溶剂； 所述的极性溶剂是曱醇、 乙醇、 异丙醇、 丙酮或它们之间的混合溶剂。
10.—种铜铟硫半导体纳米粒子， 所述纳米粒子为四方晶体结构， 粒径大小为 2 ~ 10 nm, 发射光语在 600 ~ 800 nm的近红外区。
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