FR2964044B1 - Emulsion de metal liquide - Google Patents

Emulsion de metal liquide

Info

Publication number
FR2964044B1
FR2964044B1 FR1003453A FR1003453A FR2964044B1 FR 2964044 B1 FR2964044 B1 FR 2964044B1 FR 1003453 A FR1003453 A FR 1003453A FR 1003453 A FR1003453 A FR 1003453A FR 2964044 B1 FR2964044 B1 FR 2964044B1
Authority
FR
France
Prior art keywords
liquid metal
emulsion
metal emulsion
alkanethiol
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1003453A
Other languages
English (en)
Other versions
FR2964044A1 (fr
Inventor
Olivier Raccurt
Joel Dufourcq
Julien Jouhannaud
Olivier Poncelet
Flore Sonier
Maryline Roumanie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1003453A priority Critical patent/FR2964044B1/fr
Priority to JP2013525405A priority patent/JP2013538893A/ja
Priority to CN201180041350.7A priority patent/CN103068939B/zh
Priority to US13/819,300 priority patent/US20140147959A1/en
Priority to PCT/IB2011/053719 priority patent/WO2012025893A1/fr
Priority to EP11760571.7A priority patent/EP2609161A1/fr
Publication of FR2964044A1 publication Critical patent/FR2964044A1/fr
Application granted granted Critical
Publication of FR2964044B1 publication Critical patent/FR2964044B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
    • C09K23/002—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K23/00—Use of substances as emulsifying, wetting, dispersing, or foam-producing agents
    • C09K23/42—Ethers, e.g. polyglycol ethers of alcohols or phenols
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Abstract

L'invention concerne une émulsion de métal liquide. L'émulsion de l'invention comprend un métal liquide choisi parmi le gallium, l'indium et les alliages de ceux-ci et un solvant qui est un alcanethiol. L'invention trouve application dans le domaine de la fabrication de couches minces, en particulier.
FR1003453A 2010-08-26 2010-08-26 Emulsion de metal liquide Expired - Fee Related FR2964044B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1003453A FR2964044B1 (fr) 2010-08-26 2010-08-26 Emulsion de metal liquide
JP2013525405A JP2013538893A (ja) 2010-08-26 2011-08-24 液体金属エマルジョン
CN201180041350.7A CN103068939B (zh) 2010-08-26 2011-08-24 液态金属乳液
US13/819,300 US20140147959A1 (en) 2010-08-26 2011-08-24 Liquid metal emulsion
PCT/IB2011/053719 WO2012025893A1 (fr) 2010-08-26 2011-08-24 Emulsion de metal liquide
EP11760571.7A EP2609161A1 (fr) 2010-08-26 2011-08-24 Emulsion de metal liquide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1003453A FR2964044B1 (fr) 2010-08-26 2010-08-26 Emulsion de metal liquide

Publications (2)

Publication Number Publication Date
FR2964044A1 FR2964044A1 (fr) 2012-03-02
FR2964044B1 true FR2964044B1 (fr) 2012-09-14

Family

ID=43759746

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1003453A Expired - Fee Related FR2964044B1 (fr) 2010-08-26 2010-08-26 Emulsion de metal liquide

Country Status (6)

Country Link
US (1) US20140147959A1 (fr)
EP (1) EP2609161A1 (fr)
JP (1) JP2013538893A (fr)
CN (1) CN103068939B (fr)
FR (1) FR2964044B1 (fr)
WO (1) WO2012025893A1 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2999557A1 (fr) * 2012-12-14 2014-06-20 Commissariat Energie Atomique Suspension d'agregats monodisperses de sulfure de metal, son procede de fabrication et ses utilisations
FR3002234B1 (fr) 2013-02-20 2015-04-03 Commissariat Energie Atomique Encre comprenant des particules metalliques munies a leur surface de disulfures de dialkyle et procede de realisation d'une telle encre
CN103418300B (zh) * 2013-08-29 2016-03-30 启东市海信机械有限公司 用于锂离子电池制造的搅拌装置的搅拌工艺
US9841327B2 (en) * 2014-08-14 2017-12-12 Purdue Research Foundation Method of producing conductive patterns of nanoparticles and devices made thereof
CN105860598B (zh) * 2016-04-11 2019-02-01 深圳市博恩实业有限公司 具导热功能且可涂覆的液态金属组合物及其制备方法和应用
CN108293836A (zh) * 2016-08-11 2018-07-20 云南科威液态金属谷研发有限公司 一种液态金属土壤及其制备方法
US11387013B1 (en) 2017-05-24 2022-07-12 United States Of America As Represented By The Secretary Of The Air Force Residue free electrically conductive material
US10784011B1 (en) 2017-05-24 2020-09-22 United States Of America As Represented By The Secretary Of The Air Force Residue free electrically conductive material
US10428234B2 (en) 2017-09-25 2019-10-01 United States Of America As Represented By The Secretary Of The Air Force Liquid metal ink
CN108421542B (zh) * 2018-03-22 2020-08-07 河南科技学院 液态金属微球作为致孔剂在制备整体柱中的应用
CN110769663B (zh) * 2018-07-27 2021-07-20 中国科学院理化技术研究所 可回收的电磁屏蔽用液态金属浆料及其制备方法和应用
US11406956B2 (en) 2018-11-02 2022-08-09 United States Of America As Represented By The Secretary Of The Air Force Articles comprising core shell liquid metal encapsulate networks and method to control alternating current signals and power
US10900848B2 (en) 2018-11-02 2021-01-26 United States Of America As Represented By The Secretary Of The Air Force Articles comprising a resistor comprising core shell liquid metal encapsulates and method of detecting an impact
US11100223B2 (en) 2018-11-02 2021-08-24 United States Of America As Represented By The Secretary Of The Air Force Core shell liquid metal encapsulates comprising multi-functional ligands and networks comprising same
US20200146142A1 (en) 2018-11-02 2020-05-07 Government Of The United States, As Represented By The Secretary Of The Air Force Architected liquid metal networks and processes of making and using same
US11062817B1 (en) 2019-07-12 2021-07-13 United States Of America As Represented By The Secretary Of The Air Force Liquid metal encapsulates having non-native shells
CN110818824B (zh) * 2019-11-08 2021-12-28 深圳大学 一种液态金属辅助的超声聚合方法
CN110779363B (zh) * 2019-11-19 2021-07-13 大连理工大学 一种液态金属微纳液滴为工质的脉动热管
CN111112632A (zh) * 2019-12-30 2020-05-08 浙江大学 一种低熔点高导电高导热金属纳米颗粒的制备方法
WO2022211218A1 (fr) * 2021-04-02 2022-10-06 한국과학기술원 Solution de précurseur métallique liquide, procédé de fabrication de film métallique l'utilisant et dispositif électronique le comprenant

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WO2002084708A2 (fr) * 2001-04-16 2002-10-24 Basol Bulent M Procede de formation d'une couche mince de compose semiconducteur destinee a la fabrication d'un dispositif electronique, et couche mince produite par ledit procede
US7537955B2 (en) * 2001-04-16 2009-05-26 Basol Bulent M Low temperature nano particle preparation and deposition for phase-controlled compound film formation
US8329501B1 (en) * 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US7604843B1 (en) * 2005-03-16 2009-10-20 Nanosolar, Inc. Metallic dispersion
JP4714859B2 (ja) * 2005-03-01 2011-06-29 国立大学法人 名古屋工業大学 硫化銅ナノ粒子の合成方法
WO2007101138A2 (fr) * 2006-02-23 2007-09-07 Van Duren Jeroen K J Impression à haut rendement de couche précurseur semi-conductrice à partir de particules de nanoflocons intermétalliques
JP4829046B2 (ja) * 2006-08-30 2011-11-30 国立大学法人 名古屋工業大学 硫化金属ナノ粒子の製造方法及び光電変換素子
US20110177602A1 (en) * 2007-06-27 2011-07-21 Endress + Hauser Conducts Gesellschaft furMess-und Regeltechnik mbH +Co. KG Composite Structure
EP2266145A2 (fr) * 2008-03-04 2010-12-29 Brent Bollman Procédés et dispositifs pour le traitement d'une couche de précurseur dans un environnement du groupe via
CN101234779A (zh) * 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法
US20090260670A1 (en) * 2008-04-18 2009-10-22 Xiao-Chang Charles Li Precursor ink for producing IB-IIIA-VIA semiconductors
US8361891B2 (en) * 2008-12-11 2013-01-29 Xerox Corporation Processes for forming channels in thin-film transistors
US8709335B1 (en) * 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by cold spraying
KR20120098799A (ko) * 2009-11-25 2012-09-05 이 아이 듀폰 디 네모아 앤드 캄파니 결정형 구리 칼코게나이드 나노입자의 수성 제조 방법, 그렇게 제조된 나노입자, 및 나노입자를 포함하는 잉크 및 코팅된 기재

Also Published As

Publication number Publication date
JP2013538893A (ja) 2013-10-17
FR2964044A1 (fr) 2012-03-02
WO2012025893A1 (fr) 2012-03-01
US20140147959A1 (en) 2014-05-29
CN103068939B (zh) 2014-11-26
CN103068939A (zh) 2013-04-24
EP2609161A1 (fr) 2013-07-03

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Year of fee payment: 6

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Effective date: 20170428