WO2009011022A1 - 圧電薄膜共振素子及びこれを用いた回路部品 - Google Patents

圧電薄膜共振素子及びこれを用いた回路部品 Download PDF

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Publication number
WO2009011022A1
WO2009011022A1 PCT/JP2007/064015 JP2007064015W WO2009011022A1 WO 2009011022 A1 WO2009011022 A1 WO 2009011022A1 JP 2007064015 W JP2007064015 W JP 2007064015W WO 2009011022 A1 WO2009011022 A1 WO 2009011022A1
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WO
WIPO (PCT)
Prior art keywords
thin film
piezoelectric thin
resonant element
same
lower electrode
Prior art date
Application number
PCT/JP2007/064015
Other languages
English (en)
French (fr)
Inventor
Tokihiro Nishihara
Motoaki Hara
Shinji Taniguchi
Masafumi Iwaki
Tsuyoshi Yokoyama
Masanori Ueda
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to PCT/JP2007/064015 priority Critical patent/WO2009011022A1/ja
Priority to JP2009523557A priority patent/JP5009369B2/ja
Priority to CN2008800232853A priority patent/CN101689845B/zh
Priority to KR1020097026922A priority patent/KR101242314B1/ko
Priority to PCT/JP2008/053920 priority patent/WO2009011148A1/ja
Publication of WO2009011022A1 publication Critical patent/WO2009011022A1/ja
Priority to US12/642,048 priority patent/US8125123B2/en

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174Membranes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02086Means for compensation or elimination of undesirable effects
    • H03H9/02118Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02157Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/132Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175Acoustic mirrors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56Monolithic crystal filters
    • H03H9/566Electric coupling means therefor
    • H03H9/568Electric coupling means therefor consisting of a ladder configuration
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414Resonance frequency
    • H03H2003/0421Modification of the thickness of an element
    • H03H2003/0428Modification of the thickness of an element of an electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

 圧電薄膜共振素子(1)は、楕円の平面形状を有し、外周に所定の角度で傾斜した傾斜部(3a)を有する下面電極(3)と楕円の平面形状を有する上面電極(5)と両電極に挟まれた圧電膜(4)との積層構造からなる共振部を具備する。上面電極(5)の下面電極(3)の傾斜部(3a)が対向する位置の一部に付加膜(8)が設けられ、これにより共振部の下面電極(3)の傾斜部(3a)における積層厚のうち一部の積層厚Hcが共振部の下面電極(3)の傾斜部(3a)より内側部分における積層厚HAよりも厚くなっている。
PCT/JP2007/064015 2007-07-13 2007-07-13 圧電薄膜共振素子及びこれを用いた回路部品 WO2009011022A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/JP2007/064015 WO2009011022A1 (ja) 2007-07-13 2007-07-13 圧電薄膜共振素子及びこれを用いた回路部品
JP2009523557A JP5009369B2 (ja) 2007-07-13 2008-03-05 圧電薄膜共振素子及びこれを用いた回路部品
CN2008800232853A CN101689845B (zh) 2007-07-13 2008-03-05 压电薄膜共振元件以及利用它的电路部件
KR1020097026922A KR101242314B1 (ko) 2007-07-13 2008-03-05 압전 박막 공진 소자 및 이를 이용한 회로 부품
PCT/JP2008/053920 WO2009011148A1 (ja) 2007-07-13 2008-03-05 圧電薄膜共振素子及びこれを用いた回路部品
US12/642,048 US8125123B2 (en) 2007-07-13 2009-12-18 Piezoelectric thin film resonant element and circuit component using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/064015 WO2009011022A1 (ja) 2007-07-13 2007-07-13 圧電薄膜共振素子及びこれを用いた回路部品

Publications (1)

Publication Number Publication Date
WO2009011022A1 true WO2009011022A1 (ja) 2009-01-22

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2007/064015 WO2009011022A1 (ja) 2007-07-13 2007-07-13 圧電薄膜共振素子及びこれを用いた回路部品
PCT/JP2008/053920 WO2009011148A1 (ja) 2007-07-13 2008-03-05 圧電薄膜共振素子及びこれを用いた回路部品

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053920 WO2009011148A1 (ja) 2007-07-13 2008-03-05 圧電薄膜共振素子及びこれを用いた回路部品

Country Status (4)

Country Link
US (1) US8125123B2 (ja)
KR (1) KR101242314B1 (ja)
CN (1) CN101689845B (ja)
WO (2) WO2009011022A1 (ja)

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JP2013123184A (ja) * 2011-12-12 2013-06-20 Taiyo Yuden Co Ltd フィルタおよびデュプレクサ

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US9331666B2 (en) * 2012-10-22 2016-05-03 Qualcomm Mems Technologies, Inc. Composite dilation mode resonators
KR101918031B1 (ko) 2013-01-22 2018-11-13 삼성전자주식회사 스퓨리어스 공진을 감소시키는 공진기 및 공진기 제작 방법
JP6336712B2 (ja) * 2013-01-28 2018-06-06 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6185292B2 (ja) * 2013-06-10 2017-08-23 太陽誘電株式会社 弾性波デバイス
KR20150023086A (ko) * 2013-08-22 2015-03-05 (주)와이솔 압전 소자 기반 진동 모듈
JP6333540B2 (ja) * 2013-11-11 2018-05-30 太陽誘電株式会社 圧電薄膜共振子、フィルタ、及び分波器
JP6325799B2 (ja) 2013-11-11 2018-05-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
JP6325798B2 (ja) 2013-11-11 2018-05-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびデュプレクサ
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KR20180018149A (ko) * 2016-08-12 2018-02-21 삼성전기주식회사 체적 음향 공진기
JP6668201B2 (ja) * 2016-08-31 2020-03-18 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ。
US10903814B2 (en) * 2016-11-30 2021-01-26 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator
US10873316B2 (en) * 2017-03-02 2020-12-22 Samsung Electro-Mechanics Co., Ltd. Acoustic resonator and method of manufacturing the same
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JP6886357B2 (ja) 2017-07-03 2021-06-16 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
JP7245849B2 (ja) 2018-01-19 2023-03-24 武漢衍熙微器件有限公司 薄膜圧電共振器
US10892730B2 (en) 2018-05-30 2021-01-12 Vanguard International Semiconductor Singapore Pte. Ltd. Acoustic filter with packaging-defined boundary conditions and method for producing the same
WO2020203093A1 (ja) * 2019-03-29 2020-10-08 株式会社村田製作所 弾性波装置
JP7383404B2 (ja) * 2019-06-05 2023-11-20 太陽誘電株式会社 圧電薄膜共振器、フィルタおよびマルチプレクサ
CN111130492B (zh) * 2019-12-31 2021-06-01 诺思(天津)微***有限责任公司 悬翼结构具有角部的体声波谐振器、滤波器及电子设备
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Also Published As

Publication number Publication date
US8125123B2 (en) 2012-02-28
KR101242314B1 (ko) 2013-03-12
CN101689845A (zh) 2010-03-31
WO2009011148A1 (ja) 2009-01-22
US20100148636A1 (en) 2010-06-17
CN101689845B (zh) 2013-01-23
KR20100023892A (ko) 2010-03-04

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