CN105428520A - 压电元件的制造方法及压电基板 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 230000002093 peripheral effect Effects 0.000 claims abstract description 32
- 238000000059 patterning Methods 0.000 claims description 25
- 229920003023 plastic Polymers 0.000 claims description 10
- 239000004033 plastic Substances 0.000 claims description 10
- -1 polyethylene terephthalate Polymers 0.000 claims description 9
- 239000004698 Polyethylene Substances 0.000 claims description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 229920000573 polyethylene Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical group CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- XLOFNXVVMRAGLZ-UHFFFAOYSA-N 1,1-difluoroethene;1,1,2-trifluoroethene Chemical group FC(F)=C.FC=C(F)F XLOFNXVVMRAGLZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QABZOJKEJLITJL-UHFFFAOYSA-N but-3-enoic acid;ethenyl acetate Chemical compound CC(=O)OC=C.OC(=O)CC=C QABZOJKEJLITJL-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000002573 ethenylidene group Chemical group [*]=C=C([H])[H] 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- WFKAJVHLWXSISD-UHFFFAOYSA-N isobutyramide Chemical compound CC(C)C(N)=O WFKAJVHLWXSISD-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
本发明涉及一种压电元件的制造方法。所述制造方法包含:形成图案化屏蔽层于基板上方,其中图案化屏蔽层具有一开口露出基板的一部分;形成压电元件于开口内;以及移除图案化屏蔽层,以获得压电元件,其中压电元件具有中心部分及周边部分邻接中心部分,周边部分的最大高度大于中心部分的高度。本制造方法是透过图案化屏蔽层形成压电元件于基板上,因此后续不需额外的黏着制程将压电元件贴合在基板上,也就不会发生黏着制程可能会造成的问题。
Description
技术领域
本发明涉及一种压电元件的制造方法及一种压电基板。
背景技术
现有的压电元件通常是先成膜后再以裁切或冲压(punch)的方式制作成多个压电元件。后续再将压电元件贴合在基板上。然而裁切或冲压后形成的压电元件要透过黏着剂才能黏贴在基板上。但此黏着制程可能会使产品良率下降,或甚至产生其他负面影响。举例而言,黏着制程会造成产品厚度增加,或影响产品的音响阻抗。此外,黏着制程中也可能会发生贴合不良或贴合错位等制程问题。因此,如何能够避免上述问题发生成为本技术领域的重要课题之一。
发明内容
为了解决现有技术所述的问题,本发明提供一种压电元件的制造方法。
本发明提供一种压电元件的制造方法,包含:形成图案化屏蔽层于基板上方,其中图案化屏蔽层具有一开口露出基板的一部分;形成压电元件于开口内;以及移除图案化屏蔽层,以获得压电元件,其中压电元件具有中心部分及周边部分邻接中心部分,周边部分的最大高度大于中心部分的高度。
在多个实施例中,形成压电元件于开口内包含:填充压电材料溶液于开口内;以及固化压电材料溶液,以形成压电元件。
在多个实施例中,压电材料溶液的高度小于开口的深度。
在多个实施例中,图案化屏蔽层包含塑料层及黏着层位于塑料层及基板之间。
在多个实施例中,图案化屏蔽层包含聚对苯二甲酸乙二酯、聚酰亚胺、金属、合金、硅或其组合。
本发明另提供一种压电基板,包含基板以及压电元件。压电元件位于基板上,其中压电元件具有中心部分及周边部分邻接中心部分,周边部分的最大高度大于中心部分的高度。
在多个实施例中,周边部分的高度自周边部分的侧壁朝中心部分先增加再减少。
在多个实施例中,周边部分的侧壁与基板的表面之间的夹角为40°至100°。
在多个实施例中,周边部分的最大高度为中心部分的高度的二倍至二十一倍。
通过图案化屏蔽层形成压电元件于基板上,因此后续不需额外的黏着制程将压电元件贴合在基板上,也就不会发生先前技术中所述的黏着制程可能会造成的问题。
附图说明
图1A-1D为依照本发明多个实施例的制造压电元件的方法在各制程阶段的剖面示意图。
主要元件符号说明
10:基板
20:图案化屏蔽层
20a:开口
22:塑料层
24:黏着层
30:压电材料溶液
35:压电元件
35a:侧壁
d1:深度
H1:最大高度
h1、H2:高度
Pc:中心部分
Pp:周边部分
α:夹角
具体实施方式
接着以实施例并配合附图以详细说明本发明,在附图或描述中,相似或相同的部分使用相同的符号或编号。在附图中,实施例的形状或厚度可能扩大,以简化或方便标示,而附图中元件的部分将以文字描述。可以了解的是,未绘制或未描述的元件为本领域普通技术人员所知悉的各种样式。本实施方式为本发明的理想化实施例(及中间结构)以示意性的横截面来说明,且本领域技术人员可预期本实施方式中制造方法、形状及/或公差的合理改变。因此,不应将本发明的实施例理解为限制本发明所请求的范围。
如先前技术所述,裁切或冲压后形成的压电元件要透过黏着剂才能黏贴在基板上。但此黏着制程可能会使产品良率下降,或甚至产生其他负面影响。因此,本发明提供一种压电元件的制造方法,通过图案化屏蔽层形成压电元件于基板上,因此后续不需额外的黏着制程将压电元件贴合在基板上,也就不会发生现有技术中所述的黏着制程可能会造成的问题。
图1A-1D为依照本发明多个实施例的制造压电元件的方法在各制程阶段的剖面示意图。请参照图1A,提供一基板10。在多个实施例中,基板10的材质为玻璃、石英、透明高分子材料或其他合适的材料。
然后,形成图案化屏蔽层20于基板10上方,如图1A所示。图案化屏蔽层20具有一开口20a露出基板10的一部分。换言之,开口20a为贯穿孔。在多个实施例中,图案化屏蔽层20具有多个开口20a,各开口20a露出基板10的一部分。在多个实施例中,先对完整的屏蔽层(图未示)进行冲压或裁切制程,形成图案化屏蔽层20,然后再将其贴合在基板上10,以形成如第1A图的结构。在多个实施例中,图案化屏蔽层20包含聚对苯二甲酸乙二酯、聚酰亚胺、聚碳酸酯(PC)、聚乙烯(PE)、聚甲基丙烯酸甲酯(PMMA)、金属、合金、硅或其组合。在多个实施例中,金属或合金包含镍、铬、铝、钼、钕、钛、铜、银、金、锌、铟或镓。
在多个实施例中,如第1A图所示,图案化屏蔽层20包含塑料层22及黏着层24,黏着层24位于塑料层22及基板10之间。在多个实施例中,塑料层22包含聚对苯二甲酸乙二酯、聚碳酸酯(PC)、聚乙烯(PE)、聚甲基丙烯酸甲酯(PMMA)或其组合。在多个实施例中,黏着层24包含聚氨酯、聚乙烯醇(polyvinylalcohol)、环氧树脂(epoxy)、丙烯酸酯共聚物(acrylatecopolymer)、热可塑聚氨酯(thermoplasticpolyurethane)、氯化聚丙烯(chlorinatedpolypropylene)、乙酸乙烯酯(vinylacetate)或其组合。在多个实施例中,塑料层22的厚度高于压电材料溶液中心的厚度。在多个实施例中,黏着层24的厚度小于或等于25微米。
请参照图1B-1C,形成压电元件35于开口20a内。具体而言,如图1B所示,填充压电材料溶液30于开口20a内。在多个实施例中,压电材料溶液30包含氟系树脂及溶剂。在多个实施例中,氟系树脂为偏二氟乙烯-四氟乙烯共聚物、偏二氟乙烯-三氟乙烯共聚物、聚偏二氟乙烯或其组合。在多个实施例中,溶剂为二甲基甲酰胺(DMF)、甲乙酮(MEK)、丙酮、N-甲基吡咯烷酮(NMP)、二甲基乙酰胺(DMAc)或其组合。在多个实施例中,压电材料溶液30的固含量为5%至40%。在多个实施例中,压电材料溶液30更包含奈米碳,例如碳奈米管、碳奈米纤维、碳奈米球、石墨烯或其组合。
在多个实施例中,如图1B所示,压电材料溶液30在开口20a中的高度h1为70微米至110微米之间。在此所述的「高度h1」是指压电材料溶液30位于开口20a中间的高度,而非靠近图案化屏蔽层20处的高度。在多个实施例中,压电材料溶液30的高度h1小于开口20a的深度d1。
值得注意的是,假如图案化屏蔽层20为一整层的胶层(例如可剥胶层),在填充压电材料溶液30于开口20a内之后,压电材料溶液30中的溶剂可能会溶解胶层,而与胶层形成同一膜层,造成对后续制程的负面影响。因此在本发明的多个实施例中,图案化屏蔽层20包含不具黏着性的聚对苯二甲酸乙二酯、聚酰亚胺、金属、合金、硅或其组合,以避免上述问题发生。
然后,如图1B-1C所示,固化压电材料溶液30,以形成压电元件35。在多个实施例中,对压电材料溶液30进行一固化制程,以避免流动。因应压电材料的选择,会选用不同温度的固化制程。
请参照图1C-1D,移除图案化屏蔽层20,以获得位于基板10上的压电元件35。在多个实施例中,在移除图案化屏蔽层20之后,进行另一固化制程。换言之,固化制程可一次进行或分段进行。
由上述可知,压电元件35是直接形成在基板10上,因此后续不需额外的黏着制程将压电元件贴合在基板上,也就不会发生先前技术中所述的黏着制程可能会造成的问题。
所形成的压电元件35具有中心部分Pc及周边部分Pp。周边部分Pp邻接中心部分Pc。在多个实施例中,以上视角度而言,周边部分Pp围绕中心部分Pc。在此所述的「中心部分Pc」系指在压电元件35之中,厚度均匀(例如平均厚度的正负10%以内)的部分。在此所述的「周边部分Pp」系指在压电元件35之中,位于中心部分Pc周边的另一部分。
在多个实施例中,周边部分Pp的最大高度H1大于中心部分Pc的高度H2,这是因为填充压电材料溶液30时,有一部分的压电材料溶液30会分布在图案化屏蔽层20的侧壁,如图1B所示。
本发明另提供一种压电基板,包含基板以及压电元件。请参照图1D,压电基板包含基板10以及压电元件35。压电元件35位于基板10上。在多个实施例中,压电元件35接触基板10,并附着在基板10上。
压电元件35具有中心部分Pc及周边部分Pp。周边部分Pp邻接中心部分Pc。周边部分Pp的最大高度H1大于中心部分Pc的高度H2。在多个实施例中,中心部分Pc的高度H2为1微米至30微米之间。
在多个实施例中,周边部分Pp的高度(图未标)自周边部分Pp的侧壁35a朝中心部分Pc先增加再减少。
在多个实施例中,周边部分Pp的侧壁35a与基板10的表面的夹角α为40°至100°。在多个实施例中,周边部分Pp的侧壁35a与基板10的表面的夹角α为60°至90°。
在多个实施例中,周边部分Pp的最大高度H1为中心部分Pc的高度H2的二倍至二十一倍。
虽然本发明已以实施方式揭露如上,然其并非用以限定本发明,任何本领域普通技术人员,在不脱离本发明之精神和范围内,当可作各种之变更与修改,因此本发明的保护范围当视后附的权利要求书所界定的为准。
Claims (9)
1.一种压电元件的制造方法,其特征在于,包含:
形成一图案化屏蔽层于一基板上方,其中该图案化屏蔽层具有一开口露出该基板的一部分;
形成一压电元件于该开口内;以及
移除该图案化屏蔽层,以获得该压电元件,其中该压电元件具有一中心部分及一周边部分邻接该中心部分,该周边部分的一最大高度大于该中心部分的一高度。
2.如权利要求1所述的压电元件的制造方法,其特征在于,其中形成该压电元件于该开口内包含:
填充一压电材料溶液于该开口内;以及
固化该压电材料溶液,以形成该压电元件。
3.如权利要求2所述的压电元件的制造方法,其特征在于,其中该压电材料溶液的一高度小于该开口的一深度。
4.如权利要求1所述的压电元件的制造方法,其特征在于,其中该图案化屏蔽层包含一塑料层及一黏着层位于该塑料层及该基板之间。
5.如权利要求1所述的压电元件的制造方法,其特征在于,其中该图案化屏蔽层包含聚对苯二甲酸乙二酯、聚酰亚胺、聚碳酸酯(PC)、聚乙烯(PE)、聚甲基丙烯酸甲酯(PMMA)、金属、合金、硅或其组合。
6.一种压电基板,其特征在于,包含:
一基板;以及
一压电元件,位于该基板上,其中该压电元件具有一中心部分及一周边部分邻接该中心部分,该周边部分的一最大高度大于该中心部分的一高度。
7.如权利要求6所述的压电基板,其特征在于,其中该周边部分的一高度自该周边部分的一侧壁朝中心部分先增加再减少。
8.如权利要求6所述的压电基板,其特征在于,其中该周边部分的一侧壁与该基板的一表面之间的夹角为40°至100°。
9.如权利要求6所述的压电基板,其特征在于,其中该周边部分的该最大高度为该中心部分的该高度的二倍至二十一倍。
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