WO2008126268A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
WO2008126268A1
WO2008126268A1 PCT/JP2007/057156 JP2007057156W WO2008126268A1 WO 2008126268 A1 WO2008126268 A1 WO 2008126268A1 JP 2007057156 W JP2007057156 W JP 2007057156W WO 2008126268 A1 WO2008126268 A1 WO 2008126268A1
Authority
WO
WIPO (PCT)
Prior art keywords
laminate
protective
moisture
substrate
film
Prior art date
Application number
PCT/JP2007/057156
Other languages
English (en)
French (fr)
Inventor
Kenichi Watanabe
Nobuhiro Misawa
Satoshi Otsuka
Original Assignee
Fujitsu Microelectronics Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to JP2009508816A priority Critical patent/JP5365514B2/ja
Priority to CN200780052450.3A priority patent/CN101641776B/zh
Priority to PCT/JP2007/057156 priority patent/WO2008126268A1/ja
Publication of WO2008126268A1 publication Critical patent/WO2008126268A1/ja
Priority to US12/564,989 priority patent/US7939913B2/en
Priority to US13/075,463 priority patent/US8143153B2/en
Priority to US13/398,254 priority patent/US8937007B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

　半導体装置は、基板と、前記基板上に形成され、多層配線構造を含む積層体と、前記積層体中に、活性素子が形成された素子領域を囲んで連続的に延在する耐湿リングと、前記積層体中、前記耐湿リングの外側に、前記耐湿リングに沿って連続的に、前記基板表面を露出するように形成された保護溝部と、を有し、前記積層体は、ＳｉＯ2膜よりも低い比誘電率を有する層間絶縁膜の積層よりなり、前記積層体の上面、および前記保護溝部の側壁面および底面は、前記多層配線構造上の電極パッドを除き、少なくともシリコン窒化膜を含む保護膜により連続して覆われており、前記保護膜と前記保護溝部側壁面の間には、ＳｉとＣを主成分とする界面膜が形成されていることを特徴とする。
PCT/JP2007/057156 2007-03-30 2007-03-30 半導体装置 WO2008126268A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009508816A JP5365514B2 (ja) 2007-03-30 2007-03-30 半導体装置およびその製造方法
CN200780052450.3A CN101641776B (zh) 2007-03-30 2007-03-30 半导体器件
PCT/JP2007/057156 WO2008126268A1 (ja) 2007-03-30 2007-03-30 半導体装置
US12/564,989 US7939913B2 (en) 2007-03-30 2009-09-23 Semiconductor device
US13/075,463 US8143153B2 (en) 2007-03-30 2011-03-30 Method for manufacturing semiconductor device
US13/398,254 US8937007B2 (en) 2007-03-30 2012-02-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/057156 WO2008126268A1 (ja) 2007-03-30 2007-03-30 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/564,989 Continuation US7939913B2 (en) 2007-03-30 2009-09-23 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2008126268A1 true WO2008126268A1 (ja) 2008-10-23

Family

ID=39863448

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/057156 WO2008126268A1 (ja) 2007-03-30 2007-03-30 半導体装置

Country Status (4)

Country Link
US (3) US7939913B2 (ja)
JP (1) JP5365514B2 (ja)
CN (1) CN101641776B (ja)
WO (1) WO2008126268A1 (ja)

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US20100244199A1 (en) * 2009-03-31 2010-09-30 Fujitsu Microelectronics Limited Semiconductor device and method for manufacturing semiconductor device
EP2273549A1 (en) * 2009-07-08 2011-01-12 Lsi Corporation Suppressing fractures in diced integrated circuits
JP2011233746A (ja) * 2010-04-28 2011-11-17 Renesas Electronics Corp 半導体装置およびその製造方法
US20120241914A1 (en) * 2009-09-04 2012-09-27 X-Fab Semiconductor Foundries Ag Reduction of fluorine contamination of bond pads of semiconductor devices
WO2013088975A1 (ja) * 2011-12-12 2013-06-20 ソニー株式会社 固体撮像装置およびその製造方法
JP2014011342A (ja) * 2012-06-29 2014-01-20 Denso Corp 炭化珪素半導体装置
WO2015133324A1 (ja) * 2014-03-06 2015-09-11 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2020170148A (ja) * 2013-06-17 2020-10-15 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 表示装置
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Cited By (17)

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Publication number Priority date Publication date Assignee Title
JP2010141020A (ja) * 2008-12-10 2010-06-24 Sony Corp 固体撮像装置とその製造方法、電子機器並びに半導体装置
US20100244199A1 (en) * 2009-03-31 2010-09-30 Fujitsu Microelectronics Limited Semiconductor device and method for manufacturing semiconductor device
EP2273549A1 (en) * 2009-07-08 2011-01-12 Lsi Corporation Suppressing fractures in diced integrated circuits
US9059110B2 (en) * 2009-09-04 2015-06-16 X-Fab Semiconductor Foundries Ag Reduction of fluorine contamination of bond pads of semiconductor devices
US20120241914A1 (en) * 2009-09-04 2012-09-27 X-Fab Semiconductor Foundries Ag Reduction of fluorine contamination of bond pads of semiconductor devices
JP2011233746A (ja) * 2010-04-28 2011-11-17 Renesas Electronics Corp 半導体装置およびその製造方法
US9443912B2 (en) 2011-12-12 2016-09-13 Sony Corporation Solid-state image pickup device and manufacturing method thereof
CN103975435A (zh) * 2011-12-12 2014-08-06 索尼公司 固态摄像装置及其制造方法
WO2013088975A1 (ja) * 2011-12-12 2013-06-20 ソニー株式会社 固体撮像装置およびその製造方法
US11991889B2 (en) 2011-12-12 2024-05-21 Sony Semiconductor Solutions Corporation Solid-state image pickup device and manufacturing method thereof
JP2014011342A (ja) * 2012-06-29 2014-01-20 Denso Corp 炭化珪素半導体装置
JP2020170148A (ja) * 2013-06-17 2020-10-15 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 表示装置
US11264408B2 (en) 2013-06-17 2022-03-01 Samsung Display Co., Ltd. Array substrate and organic light-emitting display including the same
JP7079803B2 (ja) 2013-06-17 2022-06-02 三星ディスプレイ株式會社 表示装置
US11916087B2 (en) 2013-06-17 2024-02-27 Samsung Display Co., Ltd. Array substrate and organic light-emitting display including the same
WO2015133324A1 (ja) * 2014-03-06 2015-09-11 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US10651229B2 (en) 2014-03-06 2020-05-12 Sony Corporation Solid-state image device and method for manufacturing solid-state image device, and electronic device

Also Published As

Publication number Publication date
JPWO2008126268A1 (ja) 2010-07-22
US7939913B2 (en) 2011-05-10
US8143153B2 (en) 2012-03-27
US20110177672A1 (en) 2011-07-21
CN101641776A (zh) 2010-02-03
JP5365514B2 (ja) 2013-12-11
US20100006984A1 (en) 2010-01-14
US20120149190A1 (en) 2012-06-14
CN101641776B (zh) 2011-11-16
US8937007B2 (en) 2015-01-20

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