WO2008093606A1 - 不揮発性記憶装置、不揮発性記憶システム、及びアクセス装置 - Google Patents
不揮発性記憶装置、不揮発性記憶システム、及びアクセス装置 Download PDFInfo
- Publication number
- WO2008093606A1 WO2008093606A1 PCT/JP2008/051056 JP2008051056W WO2008093606A1 WO 2008093606 A1 WO2008093606 A1 WO 2008093606A1 JP 2008051056 W JP2008051056 W JP 2008051056W WO 2008093606 A1 WO2008093606 A1 WO 2008093606A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nonvolatile storage
- storage device
- access
- temperature
- storage system
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/20—Cooling means
- G06F1/206—Cooling means comprising thermal management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Memory System (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/523,756 US8209504B2 (en) | 2007-01-30 | 2008-01-25 | Nonvolatile memory device, nonvolatile memory system, and access device having a variable read and write access rate |
JP2008556071A JPWO2008093606A1 (ja) | 2007-01-30 | 2008-01-25 | 不揮発性記憶装置、不揮発性記憶システム、及びアクセス装置 |
EP08703883A EP2120189B1 (en) | 2007-01-30 | 2008-01-25 | Nonvolatile storage device, nonvolatile storage system, and access device |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007019527 | 2007-01-30 | ||
JP2007-019527 | 2007-01-30 | ||
JP2007-100144 | 2007-04-06 | ||
JP2007100144 | 2007-04-06 | ||
JP2007-100142 | 2007-04-06 | ||
JP2007100142 | 2007-04-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008093606A1 true WO2008093606A1 (ja) | 2008-08-07 |
Family
ID=39673918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/051056 WO2008093606A1 (ja) | 2007-01-30 | 2008-01-25 | 不揮発性記憶装置、不揮発性記憶システム、及びアクセス装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8209504B2 (ja) |
EP (1) | EP2120189B1 (ja) |
JP (1) | JPWO2008093606A1 (ja) |
WO (1) | WO2008093606A1 (ja) |
Cited By (9)
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CN101889313A (zh) * | 2008-12-30 | 2010-11-17 | E·孔法洛涅里 | 具有扩展工作温度范围的非易失性存储器 |
DE102010009736A1 (de) | 2010-03-01 | 2011-09-01 | Giesecke & Devrient Gmbh | System mit elektronischem Schaltkreis |
WO2011128954A1 (ja) * | 2010-04-16 | 2011-10-20 | パナソニック株式会社 | 記録再生装置 |
JP2014022010A (ja) * | 2012-07-19 | 2014-02-03 | Fujitsu Ltd | 伝送装置および温度制御方法 |
KR20140045792A (ko) * | 2012-10-09 | 2014-04-17 | 삼성전자주식회사 | 온도에 따라 차별화된 리드 동작 및 라이트 동작을 갖는 반도체 메모리 장치 |
WO2020188429A1 (en) * | 2019-03-20 | 2020-09-24 | Kioxia Corporation | Semiconductor storage device |
CN113296688A (zh) * | 2020-02-24 | 2021-08-24 | 西部数据技术公司 | 非易失性存储器裸片接口的数据传送速度的动态调整 |
CN113849019A (zh) * | 2021-09-14 | 2021-12-28 | 至誉科技(武汉)有限公司 | 一种基于CFexpress读卡器的智能管理***及方法 |
US11922030B2 (en) | 2020-04-27 | 2024-03-05 | Kioxia Corporation | Temperature sensor management in nonvolatile die-stacked memory |
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CA2682814C (en) | 2004-07-12 | 2011-11-08 | Kabushiki Kaisha Toshiba | Storage device and host apparatus |
US8788779B1 (en) * | 2010-09-17 | 2014-07-22 | Western Digital Technologies, Inc. | Non-volatile storage subsystem with energy-based performance throttling |
US8975951B2 (en) * | 2011-04-11 | 2015-03-10 | Sony Corporation | Semiconductor integrated circuit |
JP2013050818A (ja) * | 2011-08-30 | 2013-03-14 | Toshiba Corp | メモリシステム |
US9152568B1 (en) * | 2011-12-05 | 2015-10-06 | Seagate Technology Llc | Environmental-based device operation |
JP5787840B2 (ja) * | 2012-07-26 | 2015-09-30 | 株式会社東芝 | 記憶システムおよび記憶システムのデータ書き込み方法 |
US8947158B2 (en) | 2012-09-03 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US8972818B2 (en) | 2012-10-05 | 2015-03-03 | Qualcomm Incorporated | Algorithm for optimal usage of external memory tuning sequence |
JP5987732B2 (ja) | 2013-03-04 | 2016-09-07 | 株式会社デンソー | 車両用電子機器 |
US9385592B2 (en) | 2013-08-21 | 2016-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Charge pump circuit and semiconductor device including the same |
TWI498732B (zh) * | 2014-02-20 | 2015-09-01 | Phison Electronics Corp | 資料傳輸方法、記憶體控制電路單元與記憶體儲存裝置 |
KR102267237B1 (ko) | 2014-03-07 | 2021-06-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
US9312280B2 (en) | 2014-07-25 | 2016-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102239356B1 (ko) * | 2015-02-17 | 2021-04-13 | 삼성전자주식회사 | 클록 제어 유닛 또는 전원 제어 유닛을 포함하는 저장 장치와 메모리 시스템, 그리고 그것의 동작 방법 |
US9921754B2 (en) | 2015-07-28 | 2018-03-20 | Futurewei Technologies, Inc. | Dynamic coding algorithm for intelligent coded memory system |
US9760432B2 (en) | 2015-07-28 | 2017-09-12 | Futurewei Technologies, Inc. | Intelligent code apparatus, method, and computer program for memory |
JP2017027541A (ja) * | 2015-07-28 | 2017-02-02 | 株式会社東芝 | 半導体装置及び電子機器 |
US9658791B2 (en) * | 2015-08-14 | 2017-05-23 | International Business Machines Corporation | Managing temperature of solid state disk devices |
JP6762750B2 (ja) * | 2016-03-31 | 2020-09-30 | キヤノン株式会社 | 記録装置、その制御方法およびプログラム |
US10331352B2 (en) | 2016-06-06 | 2019-06-25 | Toshiba Memory Corporation | Dynamic processing of storage command based on internal operations of storage system |
US9761294B1 (en) * | 2016-06-17 | 2017-09-12 | International Business Machines Corporation | Thermal-aware memory |
TWI612426B (zh) * | 2016-11-09 | 2018-01-21 | 瑞昱半導體股份有限公司 | 應用於一電子裝置的記憶卡讀取方法以及記憶卡讀取系統 |
KR102656190B1 (ko) | 2016-11-24 | 2024-04-11 | 삼성전자주식회사 | 불휘발성 메모리 장치를 포함하는 스토리지 장치 및 불휘발성 메모리 장치의 액세스 방법 |
TWI628666B (zh) * | 2017-08-10 | 2018-07-01 | 群聯電子股份有限公司 | 溫度控制方法、記憶體儲存裝置及記憶體控制電路單元 |
US20190033933A1 (en) * | 2017-12-06 | 2019-01-31 | Intel Corporation | Cache policy responsive to temperature changes |
US10339983B1 (en) * | 2017-12-29 | 2019-07-02 | Micron Technology, Inc. | Temperature-based memory operations |
KR102568896B1 (ko) * | 2018-04-19 | 2023-08-21 | 에스케이하이닉스 주식회사 | 메모리 컨트롤러 및 이를 포함하는 메모리 시스템 |
KR20200020269A (ko) * | 2018-08-16 | 2020-02-26 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 동작 방법 |
US11281401B2 (en) * | 2018-10-23 | 2022-03-22 | Micron Technology, Inc. | Controlled heating of a memory device |
US10984876B2 (en) | 2019-06-19 | 2021-04-20 | SanDiskTechnologies LLC | Temperature based programming in memory |
TWI703448B (zh) * | 2019-08-13 | 2020-09-01 | 瑞昱半導體股份有限公司 | 可降低發熱量的介面橋接電路 |
CN112416107B (zh) * | 2019-08-20 | 2024-04-19 | 瑞昱半导体股份有限公司 | 可降低发热量的接口桥接电路 |
CN110765041B (zh) * | 2019-10-22 | 2023-06-09 | 天津津航计算技术研究所 | 自适应的Nand Flash读写速度调整*** |
CN110765042B (zh) * | 2019-10-22 | 2023-06-09 | 天津津航计算技术研究所 | 自适应的Nand Flash读写速度调整方法 |
JP2022133134A (ja) * | 2021-03-01 | 2022-09-13 | キヤノン株式会社 | 撮像装置、撮像装置の制御方法、デバイス、デバイスの制御方法 |
JP2022169241A (ja) * | 2021-04-27 | 2022-11-09 | パナソニックIpマネジメント株式会社 | 撮像装置 |
CN113534941A (zh) * | 2021-07-29 | 2021-10-22 | 群联电子股份有限公司 | 温度控制方法、存储器存储装置及存储器控制电路单元 |
US11847466B2 (en) * | 2021-11-30 | 2023-12-19 | Texas Instruments Incorporated | Controlled thermal shutdown and recovery |
TWI801106B (zh) * | 2022-01-24 | 2023-05-01 | 宜鼎國際股份有限公司 | 記憶體存取速度調整方法、控制裝置以及記憶體模組 |
CN114706529A (zh) * | 2022-04-08 | 2022-07-05 | 合肥兆芯电子有限公司 | 存储器自适应温控方法、存储装置及控制电路单元 |
Citations (10)
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JPS61190798A (ja) * | 1985-02-19 | 1986-08-25 | Fujitsu Ltd | 半導体装置 |
JPH07320018A (ja) * | 1994-05-26 | 1995-12-08 | Canon Inc | メモリカード並びにメモリカードを使用する電子機器およびメモリカードのアクセススピード設定方法 |
JPH09237129A (ja) | 1996-03-01 | 1997-09-09 | Canon Inc | 情報処理装置 |
JP2000510634A (ja) | 1998-02-25 | 2000-08-15 | レクサー メディア,インコーポレイテッド | 複数のデバイスへ同時書き込み操作を行うことにより高まるフラッシュメモリデバイスにおけるメモリ性能 |
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2008
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- 2008-01-25 JP JP2008556071A patent/JPWO2008093606A1/ja active Pending
- 2008-01-25 US US12/523,756 patent/US8209504B2/en active Active
- 2008-01-25 WO PCT/JP2008/051056 patent/WO2008093606A1/ja active Application Filing
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Title |
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See also references of EP2120189A4 |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101889313B (zh) * | 2008-12-30 | 2014-12-03 | E·孔法洛涅里 | 具有扩展工作温度范围的非易失性存储器 |
US8572333B2 (en) | 2008-12-30 | 2013-10-29 | Micron Technology, Inc. | Non-volatile memory with extended operating temperature range |
CN101889313A (zh) * | 2008-12-30 | 2010-11-17 | E·孔法洛涅里 | 具有扩展工作温度范围的非易失性存储器 |
DE102010009736A1 (de) | 2010-03-01 | 2011-09-01 | Giesecke & Devrient Gmbh | System mit elektronischem Schaltkreis |
EP2363780A2 (de) | 2010-03-01 | 2011-09-07 | Giesecke & Devrient GmbH | System zum erwärmen eines elektronischen Schaltkreises |
WO2011128954A1 (ja) * | 2010-04-16 | 2011-10-20 | パナソニック株式会社 | 記録再生装置 |
US9436782B2 (en) | 2012-07-19 | 2016-09-06 | Fujitsu Limited | Transmission device and temperature control method |
JP2014022010A (ja) * | 2012-07-19 | 2014-02-03 | Fujitsu Ltd | 伝送装置および温度制御方法 |
KR20140045792A (ko) * | 2012-10-09 | 2014-04-17 | 삼성전자주식회사 | 온도에 따라 차별화된 리드 동작 및 라이트 동작을 갖는 반도체 메모리 장치 |
KR101962784B1 (ko) * | 2012-10-09 | 2019-03-27 | 삼성전자주식회사 | 온도에 따라 차별화된 리드 동작 및 라이트 동작을 갖는 반도체 메모리 장치 |
WO2020188429A1 (en) * | 2019-03-20 | 2020-09-24 | Kioxia Corporation | Semiconductor storage device |
CN113296688A (zh) * | 2020-02-24 | 2021-08-24 | 西部数据技术公司 | 非易失性存储器裸片接口的数据传送速度的动态调整 |
CN113296688B (zh) * | 2020-02-24 | 2024-05-28 | 西部数据技术公司 | 非易失性存储器裸片接口的数据传送速度的动态调整 |
US11922030B2 (en) | 2020-04-27 | 2024-03-05 | Kioxia Corporation | Temperature sensor management in nonvolatile die-stacked memory |
CN113849019A (zh) * | 2021-09-14 | 2021-12-28 | 至誉科技(武汉)有限公司 | 一种基于CFexpress读卡器的智能管理***及方法 |
CN113849019B (zh) * | 2021-09-14 | 2022-04-08 | 至誉科技(武汉)有限公司 | 一种基于CFexpress读卡器的智能管理***及方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2120189A4 (en) | 2010-02-17 |
EP2120189B1 (en) | 2013-01-16 |
JPWO2008093606A1 (ja) | 2010-05-20 |
US20100023678A1 (en) | 2010-01-28 |
EP2120189A1 (en) | 2009-11-18 |
US8209504B2 (en) | 2012-06-26 |
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