WO2002067318A3 - Elektromigrations-teststruktur zur erfassung der zuverlässigkeit von verdrahtungen - Google Patents

Elektromigrations-teststruktur zur erfassung der zuverlässigkeit von verdrahtungen Download PDF

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Publication number
WO2002067318A3
WO2002067318A3 PCT/DE2001/004599 DE0104599W WO02067318A3 WO 2002067318 A3 WO2002067318 A3 WO 2002067318A3 DE 0104599 W DE0104599 W DE 0104599W WO 02067318 A3 WO02067318 A3 WO 02067318A3
Authority
WO
WIPO (PCT)
Prior art keywords
test structure
electromigration
area
wiring
reliability
Prior art date
Application number
PCT/DE2001/004599
Other languages
English (en)
French (fr)
Other versions
WO2002067318A2 (de
Inventor
Josef Fazekas
Andreas Martin
Hagen Jochen Von
Original Assignee
Infineon Technologies Ag
Josef Fazekas
Andreas Martin
Hagen Jochen Von
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Josef Fazekas, Andreas Martin, Hagen Jochen Von filed Critical Infineon Technologies Ag
Priority to EP01995590A priority Critical patent/EP1362372A2/de
Publication of WO2002067318A2 publication Critical patent/WO2002067318A2/de
Publication of WO2002067318A3 publication Critical patent/WO2002067318A3/de
Priority to US10/647,615 priority patent/US20040036495A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G01R31/2858—Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

Die Erfindung betrifft eine Elektromigrations-Teststruktur zur Erfassung einer Zuverlässigkeit von Verdrahtungen, wobei zwischen einem ersten und zweiten Teststruktur-Anschlussbereich (I1, I2) ein zu testender Bereich mit einem Elektromigrationsbereich (L) und einem Elektromigrations-Barrierenbereich (V) ausgebildet ist. Zum hochgenauen und für hochbeschleunigte Tests geeigneten Abschätzen einer Lebensdauer befinden sich in unmittelbarer Nähe des Elektromigrations-Barrierenbereichs (V) ein erster und dritter Sensoranschluss (S1, S3), sowie am zweiten Teststruktur-Anschlussbereich (I2) ein zweiter Sensoranschluss (S2).
PCT/DE2001/004599 2001-02-23 2001-12-07 Elektromigrations-teststruktur zur erfassung der zuverlässigkeit von verdrahtungen WO2002067318A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01995590A EP1362372A2 (de) 2001-02-23 2001-12-07 Elektromigrations-teststruktur zur erfassung einer zuverlässigkeit von verdrahtungen
US10/647,615 US20040036495A1 (en) 2001-02-23 2003-08-25 Electromigration test structure for detecting the reliability of wiring

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10108915.5 2001-02-23
DE10108915A DE10108915A1 (de) 2001-02-23 2001-02-23 Elektromigrations-Teststruktur zur Erfassung einer Zuverlässigkeit von Verdrahtungen

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/647,615 Continuation US20040036495A1 (en) 2001-02-23 2003-08-25 Electromigration test structure for detecting the reliability of wiring

Publications (2)

Publication Number Publication Date
WO2002067318A2 WO2002067318A2 (de) 2002-08-29
WO2002067318A3 true WO2002067318A3 (de) 2003-05-08

Family

ID=7675345

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/004599 WO2002067318A2 (de) 2001-02-23 2001-12-07 Elektromigrations-teststruktur zur erfassung der zuverlässigkeit von verdrahtungen

Country Status (5)

Country Link
US (1) US20040036495A1 (de)
EP (1) EP1362372A2 (de)
CN (1) CN1502132A (de)
DE (1) DE10108915A1 (de)
WO (1) WO2002067318A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10253626A1 (de) 2002-11-15 2004-06-03 Infineon Technologies Ag Teststruktur zur Bestimmung der elektrischen Belastbarkeit von Kontakten
US7888672B2 (en) * 2002-11-23 2011-02-15 Infineon Technologies Ag Device for detecting stress migration properties
US6993446B2 (en) * 2003-03-17 2006-01-31 Schlumberger Technology Corporation Method and apparatus for predicting the time to failure of electronic devices at high temperatures
KR100564801B1 (ko) 2003-12-30 2006-03-28 동부아남반도체 주식회사 반도체 제조 방법
US7146588B1 (en) * 2004-08-02 2006-12-05 Advanced Micro Devices, Inc. Predicting EM reliability by decoupling extrinsic and intrinsic sigma
DE102006025351B4 (de) * 2006-05-31 2013-04-04 Globalfoundries Inc. Teststruktur zur Überwachung von Leckströmen in einer Metallisierungsschicht und Verfahren
DE102006049791A1 (de) * 2006-10-21 2008-04-30 X-Fab Semiconductor Foundries Ag Teststruktur für hochbeschleunigte Elektromigrationstests für dicke Metallisierungssysteme von Festkörperschaltkreisen
DE102006051489B4 (de) 2006-10-31 2011-12-22 Advanced Micro Devices, Inc. Teststruktur für durch OPC-hervorgerufene Kurzschlüsse zwischen Leitungen in einem Halbleiterbauelement und Messverfahren
US7858406B2 (en) * 2007-02-06 2010-12-28 Infineon Technologies Ag Semiconductor device test structures and methods
US7851237B2 (en) * 2007-02-23 2010-12-14 Infineon Technologies Ag Semiconductor device test structures and methods
CN103681621B (zh) * 2012-09-10 2016-03-16 中芯国际集成电路制造(上海)有限公司 半导体检测结构及形成方法
CN104458035B (zh) * 2013-09-24 2017-09-26 中芯国际集成电路制造(上海)有限公司 检测结构及检测方法
US9891261B2 (en) 2014-06-30 2018-02-13 International Business Machines Corporation Electromigration monitor
US9418934B1 (en) * 2015-06-30 2016-08-16 International Business Machines Corporation Structure and fabrication method for electromigration immortal nanoscale interconnects
CN111326500B (zh) * 2020-02-25 2022-03-18 上海华力集成电路制造有限公司 检测电迁移峰值电流的测试结构和方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0448273A1 (de) * 1990-03-21 1991-09-25 AT&T Corp. Elektromigrationsüberwachungseinrichtung für integrierte Schaltungen
JPH0677299A (ja) * 1992-08-25 1994-03-18 Kawasaki Steel Corp 半導体装置の配線試験方法
US5777486A (en) * 1994-10-03 1998-07-07 United Microelectronics Corporation Electromigration test pattern simulating semiconductor components
JP2000003947A (ja) * 1998-06-15 2000-01-07 Nec Corp エレクトロマイグレーション試験用半導体素子
JP2000174085A (ja) * 1998-12-08 2000-06-23 Nec Corp 半導体信頼性評価装置とその評価方法

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Publication number Priority date Publication date Assignee Title
US4652812A (en) * 1984-11-27 1987-03-24 Harris Corporation One-sided ion migration velocity measurement and electromigration failure warning device
US5264377A (en) * 1990-03-21 1993-11-23 At&T Bell Laboratories Integrated circuit electromigration monitor
JP3611338B2 (ja) * 1993-06-21 2005-01-19 財団法人国際科学振興財団 電流駆動導電性材料評価方法
US5497076A (en) * 1993-10-25 1996-03-05 Lsi Logic Corporation Determination of failure criteria based upon grain boundary electromigration in metal alloy films
US5627101A (en) * 1995-12-04 1997-05-06 Taiwan Semiconductor Manufacturing Company Ltd. Method of fabricating polysilicon electromigration sensor which can detect and monitor electromigration in composite metal lines on integrated circuit structures
US6320391B1 (en) * 1998-05-08 2001-11-20 Advanced Micro Devices, Inc. Interconnection device for low and high current stress electromigration and correlation study

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0448273A1 (de) * 1990-03-21 1991-09-25 AT&T Corp. Elektromigrationsüberwachungseinrichtung für integrierte Schaltungen
JPH0677299A (ja) * 1992-08-25 1994-03-18 Kawasaki Steel Corp 半導体装置の配線試験方法
US5777486A (en) * 1994-10-03 1998-07-07 United Microelectronics Corporation Electromigration test pattern simulating semiconductor components
JP2000003947A (ja) * 1998-06-15 2000-01-07 Nec Corp エレクトロマイグレーション試験用半導体素子
JP2000174085A (ja) * 1998-12-08 2000-06-23 Nec Corp 半導体信頼性評価装置とその評価方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 326 (E - 1565) 21 June 1994 (1994-06-21) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 04 31 August 2000 (2000-08-31) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 09 13 October 2000 (2000-10-13) *

Also Published As

Publication number Publication date
WO2002067318A2 (de) 2002-08-29
EP1362372A2 (de) 2003-11-19
DE10108915A1 (de) 2002-09-12
CN1502132A (zh) 2004-06-02
US20040036495A1 (en) 2004-02-26

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