WO2002024573A1 - Method of making holes in single-wall carbon nanotube - Google Patents

Method of making holes in single-wall carbon nanotube Download PDF

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Publication number
WO2002024573A1
WO2002024573A1 PCT/JP2001/008195 JP0108195W WO0224573A1 WO 2002024573 A1 WO2002024573 A1 WO 2002024573A1 JP 0108195 W JP0108195 W JP 0108195W WO 0224573 A1 WO0224573 A1 WO 0224573A1
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Prior art keywords
swnt
carbon nanotube
walled carbon
opening
carbon nanotubes
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PCT/JP2001/008195
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French (fr)
Japanese (ja)
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Sumio Iijima
Shunji Bandow
Kazutomo Suenaga
Kaori Hirahara
Toshiya Okazaki
Hisanori Shinohara
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Japan Science And Technology Corporation
Japan As Represented By Director General Of Nagoya University
Nec Corporation
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Publication of WO2002024573A1 publication Critical patent/WO2002024573A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00—Structure or properties of carbon nanotubes
    • C01B2202/02—Single-walled nanotubes

Definitions

  • the invention of this application relates to a method for opening single-walled carbon nanotubes. More specifically, the invention of this application relates to a simple and new method for opening single-walled carbon nanotubes, which is useful for the development and manufacture of high-performance materials such as device materials, and can also open holes in tube walls.
  • Carbon nanotubes are attracting attention as next-generation high-performance materials in a wide range of fields such as energy, information and communications, aviation and space, biological and medical fields, etc. Research and development are being carried out more actively.
  • This carbon nanotube has a single layer of graphite sheet that forms the tube, a so-called single-walled carbon nanotube (SWNT), and a multi-layer in which many cylinders of the graphite sheet are nested.
  • SWNT Single-walled carbon nanotube
  • MWNT Multi-walled carbon nanotube
  • SWNTs are produced with the end of the tube closed by a fullerene hemisphere called a cap, in relation to its production mechanism. Therefore, when enclosing any substance in the hollow inside SWNT, this key Needs to be taken. In addition, when processing such as connecting SWNTs or connecting SWNTs with other molecules, it is necessary to open a cap or tube wall of the SWNT.
  • the invention of this application has been made in view of the above circumstances, and solves the problems of the prior art, and is useful for the development of high-performance materials such as device materials using single-walled carbon nanotubes. It is an object of the present invention to provide a simple and new method for opening single-walled carbon nanotubes that can also open holes in the pipe wall. Disclosure of the invention
  • the invention of this application is based on the fact that a single-walled carbon nanotube is kept in a dry reactive gas at a temperature range of 200 to 600 ° C for 1 minute or more, thereby achieving a single-layer carbon nanotube.
  • a method for opening single-walled carbon nanotubes which comprises opening holes having a diameter of 1 to 2 nm in the nanotubes.
  • the invention of this application is the same as the first invention, The method for opening single-walled carbon nanotubes, which is characterized in that the temperature is in the temperature range of 300 to 450 ° C.
  • the opening is formed at the end of the single-walled carbon nanotube.
  • the present invention provides a method for opening a single-walled carbon nanotube, characterized in that it is a tube or a tube wall.
  • FIG. 3 is a diagram illustrating an electron microscope image of SWNT into which a molecule has been introduced.
  • the method of opening single-walled carbon nanotubes provided by Takaaki of this application is to hold SWNT in a dry reactive gas at a temperature range of 200 to 600 ° C for 1 minute or more. It is characterized in that a hole having a diameter of 1 to 2 nm is formed in SWNT.
  • SWNTs can be those produced by various generally known methods. For example, an arc discharge method, a high-temperature laser evaporation method, and a synthesis method by CV D (chemical vapor deposition) are exemplified.
  • the SWNT may be a purified one or an unpurified one.
  • a purification method for example, there is a method in which SWNT is put in a strong oxidizing acid such as nitric acid, treated at 100 to 200 ° C. for several hours, and then washed with water.
  • the SWNT is kept in the dry reactive gas at a temperature in the range of 200 to 600 ° C for 1 minute or more.
  • the holding temperature in such a heat treatment can be in a temperature range of 200 to 600 ° C., and more preferably in a temperature range of 300 to 450 ° C.
  • the atmosphere during the heat treatment is a dry reactive gas. If water is contained in the reactive gas, it is not preferable because the chemical reactivity at high temperatures is increased and the heat treatment temperature at the time of SWNT opening is greatly changed by the change in humidity.
  • dry reactive gas dry air, dry oxygen gas or dry nitrogen gas (inert gas) containing about 20% of oxygen can be used. Among them, dry air is preferable.
  • the dry reactive gas is obtained by removing moisture in the reactive gas such as air, and for example, a gas generally available as various high-purity gases can be used.
  • a gas generally available as various high-purity gases can be used.
  • the holding time varies depending on the amount of SWNT, the holding temperature and the atmospheric conditions, but can be 1 minute or more, more specifically, about 1 minute to several hours.
  • the above heat treatment may be a single-stage treatment in which the temperature is maintained at a constant temperature within the above temperature range, or a multi-stage treatment in which the heat treatment is maintained at a plurality of temperatures within the above temperature range.
  • a processing method or the like in which the processing temperature is changed as needed within the above temperature range can be considered.
  • SWNT opening method of the present invention not only the end of the SWNT but also the pipe wall can be opened. Therefore, SWNTs obtained by this invention can be used to process a wider variety of SWNTs, and are useful for developing high-functional materials such as device materials using single-walled carbon nanotubes.
  • the SWNT opening method of the invention of this application requires a large Since a large amount of SWNTs can be easily opened without the need for complicated equipment or detailed work, it is economically excellent.
  • SW W NT as a soot-like substance was obtained by a laser evaporation method.
  • the obtained SWNT is placed in a strong oxidizing acid such as nitric acid, treated at 100 to 200 ° C for several hours, washed with water, and purified to obtain mainly a length of 1 to 1 O tm and a tube diameter of 1 to 2 In nm, SWNT having a structure in which both ends of the tube were closed with caps was obtained.
  • This SWNT was placed in a container into which dry air had been introduced, and kept at 450 ° C. for 30 hours. As a result of observing the SWNT after the treatment with an electron microscope, it was confirmed that a hole having a diameter of about 2 nm was formed in almost all ends or the tube wall of the SWNT.
  • Figure 1 shows an electron microscope image of SWNT.
  • the present invention is useful for the development of high-performance materials such as device materials using single-walled carbon nanotubes, and is a simple and new single-walled carbon nanotube that can be opened in the tube wall.
  • a drilling method is provided.

Abstract

A simple and novel method of making holes in a single-wall carbon nanotube which is useful for developing high-functional materials such as device materials using a single-wall carbon nanotube and can have holes made in its tube wall. Holes 1-2 nm in diameter are made in a single-wall carbon nanotube by keeping it in a dry reactive gas at 200-600 °C for at least one min.

Description

明 細 書 単層カーボンナノチューブの開孔方法 技術分野  Description Method of opening single-walled carbon nanotubes Technical field
この出願の発明は、 単層カーボンナノチューブの開孔方法に関するも のである。 さらに詳しくは、 この出願の発明は、 デバイス材料等の高機 能材料の開発および製造に有用で、 管壁にも開孔できる、 簡便で新しい 単層カーボンナノチューブの開孔方法に関するものである。 背景技術  The invention of this application relates to a method for opening single-walled carbon nanotubes. More specifically, the invention of this application relates to a simple and new method for opening single-walled carbon nanotubes, which is useful for the development and manufacture of high-performance materials such as device materials, and can also open holes in tube walls. Background art
カーボンナノチューブは、 エネルギー分野を始め、 情報通信、 航空 ' 宇宙、 生体 ·医療等の幅広い分野で、 次世代の高機能材料として注目さ れている物質であり、 近年になって、 新しい素子あるいは材料等の研究 および開発がさらに活発に行われている。 このカーボンナノチューブに は、 チューブを形成するグラフアイ卜シートが一層である、 いわゆる単 層カーボンナノチューブ （ S W N T ： Single - walled carbon nanotube) と、 グラフアイ卜シートの円筒が多数入れ子状に重なった多 層カーボンナノチューブ （MWNT ： Mult i - walled carbon nanotube ) とがある。 カーボンナノチューブの持つ電子放出機能、 水素吸蔵機能 、 磁気機能等を効率よく応用するための研究および開発においては、 力 一ボンナノチューブの構造の単純化が必要であるため、 主に S WNTが 用いられている。  Carbon nanotubes are attracting attention as next-generation high-performance materials in a wide range of fields such as energy, information and communications, aviation and space, biological and medical fields, etc. Research and development are being carried out more actively. This carbon nanotube has a single layer of graphite sheet that forms the tube, a so-called single-walled carbon nanotube (SWNT), and a multi-layer in which many cylinders of the graphite sheet are nested. There is a carbon nanotube (MWNT: Multi-walled carbon nanotube). In research and development to efficiently apply the electron emission function, hydrogen storage function, magnetic function, etc. of carbon nanotubes, SWNTs are mainly used because it is necessary to simplify the structure of carbon nanotubes. ing.
SWNTは、 その生成機構に関連して、 チューブの終端がキャップと 呼ばれるフラーレンの半球で閉じた状態で生成されている。 したがって 、 S WN Tの中の中空に何らかの物質を内包させる場合には、 このキヤ ップを取る必要が生じる。 また、 SWNT同士や、 SWNTと他の分子 とを繋ぐ等の加工を施す場合には、 S WN Tのキャップあるいは管壁を 開孔する必要がある。 SWNTs are produced with the end of the tube closed by a fullerene hemisphere called a cap, in relation to its production mechanism. Therefore, when enclosing any substance in the hollow inside SWNT, this key Needs to be taken. In addition, when processing such as connecting SWNTs or connecting SWNTs with other molecules, it is necessary to open a cap or tube wall of the SWNT.
SWNTの終端のキャップを取る方法としては、 従来より、 酸素雰囲 気条件を注意深く制御する方法や、 エタノール中に分散させて超音波を かけることで、 キャップ部分の 5員環の弱い結合を切る方法が知られて いる。 しかし、 この方法では開孔条件が確立されておらず、 また SWN Tの管壁に開孔することはできなかった。  As a method of removing the cap at the end of SWNT, conventionally, a method of carefully controlling the oxygen atmosphere conditions or dispersing in ethanol and applying ultrasonic waves to break the weak bond of the five-membered ring of the cap part The method is known. However, in this method, the opening conditions were not established, and it was not possible to open the SWNT tube wall.
また、 SWNTの管壁を開孔する方法としては、 適当な質量とェネル ギ一のイオンを SWN Tに照射する方法が提案されている。 しかしなが ら、 この方法は、 大掛かりな装置と細かな作業を必要とし、 大量の SW N Tの管壁を開孔することは困難であった。  As a method of opening the SWNT tube wall, a method of irradiating SWNTs with ions of an appropriate mass and energy has been proposed. However, this method required extensive equipment and detailed work, and it was difficult to open a large amount of SWNT pipe walls.
そこで、 この出願の発明は、 以上の通りの事情に鑑みてなされたもの であり、 従来技術の問題点を解消し、 単層カーボンナノチューブを用い たデバイス材料等の高機能材料の開発に有用で、 その管壁にも開孔でき る、 簡便で新しい単層カーボンナノチューブの開孔方法を提供すること を課題としている。 発明の開示  Accordingly, the invention of this application has been made in view of the above circumstances, and solves the problems of the prior art, and is useful for the development of high-performance materials such as device materials using single-walled carbon nanotubes. It is an object of the present invention to provide a simple and new method for opening single-walled carbon nanotubes that can also open holes in the pipe wall. Disclosure of the invention
そこで、 この出願の発明は、 上記の課題を解決するものとして、 以下 の通りの発明を提供する。  Thus, the invention of this application provides the following inventions to solve the above problems.
すなわち、 まず第 1 には、 この出願の発明は、 単層カーボンナノチュ ーブを 200〜 600°Cの温度範囲の乾燥反応性ガス中に 1分以上保持 することで、 単層力一ボンナノチューブに直径 1〜 2 n mの孔を開孔す ることを特徴とする単層カーボンナノチューブの開孔方法を提供する。 そして第 2には、 この出願の発明は、 上記第 1の発明において、 保持 温度を、 3 0 0〜4 5 0°Cの温度範囲とすることを特徵とする単層カー ボンナノチューブの開孔方法を、 第 3には、 開孔部が、 単層カーボンナ ノチューブの端部あるいは管壁であることを特徴とする単層カーボンナ ノチューブの開孔方法を提供する。 図面の簡単な説明 That is, first of all, the invention of this application is based on the fact that a single-walled carbon nanotube is kept in a dry reactive gas at a temperature range of 200 to 600 ° C for 1 minute or more, thereby achieving a single-layer carbon nanotube. Provided is a method for opening single-walled carbon nanotubes, which comprises opening holes having a diameter of 1 to 2 nm in the nanotubes. Second, the invention of this application is the same as the first invention, The method for opening single-walled carbon nanotubes, which is characterized in that the temperature is in the temperature range of 300 to 450 ° C., Thirdly, the opening is formed at the end of the single-walled carbon nanotube. The present invention provides a method for opening a single-walled carbon nanotube, characterized in that it is a tube or a tube wall. BRIEF DESCRIPTION OF THE FIGURES
図 1 は、 実施例において、 チューブ内に C 6。分子を導入した S WN Tの電子顕微鏡像を例示した図である。 発明を実施するための最良の形態 1, in the embodiment, C 6 in the tube. FIG. 3 is a diagram illustrating an electron microscope image of SWNT into which a molecule has been introduced. BEST MODE FOR CARRYING OUT THE INVENTION
この出願の発明は、 上記の通りの特徴を持つものであるが、 以下にそ の実施の形態について説明する。  The invention of this application has the features described above, and the embodiment will be described below.
まず、 この出願の堯明が提供する単層カーボンナノチューブ （SWN T) の開孔方法は、 S WN Tを 200~ 600°Cの温度範囲の乾燥反応 性ガス中に 1分以上保持することで、 SWNTに直径1 〜2 n mの孔を 開孔することを特徴としている。  First, the method of opening single-walled carbon nanotubes (SWNT) provided by Takaaki of this application is to hold SWNT in a dry reactive gas at a temperature range of 200 to 600 ° C for 1 minute or more. It is characterized in that a hole having a diameter of 1 to 2 nm is formed in SWNT.
S WNTは、 一般に知られている各種の方法で作製されたものを対象 とすることができる。 例えば、 アーク放電法や、 高温レーザ蒸発法、 さ らには CV D (化学蒸着法） による合成方法等が例示される。 SWN T は、 精製されたものを用いてもよいし、 未精製のものを用いてもよい。 精製法としては、 例えば、 SWN Tを硝酸等の酸化性強酸中に入れ、 1 0 0〜200°Cで数時間処理した後水洗する方法等がある。  SWNTs can be those produced by various generally known methods. For example, an arc discharge method, a high-temperature laser evaporation method, and a synthesis method by CV D (chemical vapor deposition) are exemplified. The SWNT may be a purified one or an unpurified one. As a purification method, for example, there is a method in which SWNT is put in a strong oxidizing acid such as nitric acid, treated at 100 to 200 ° C. for several hours, and then washed with water.
この SWN Tを、 200〜6 00°Cの温度範囲の乾燥反応性ガス中に 1分以上保持する。 この様な熱処理における保持温度は、 200〜60 0 °Cの温度範囲とすることができ、 より好ましくは、 3 00~45 0°C の温度範囲とすることが示される。 熱処理の際の雰囲気は、 乾燥反応性ガスとする。 反応性ガス中に水分 が含まれている場合には、 高温での化学反応性が高められ、 湿度の変化 により S W N T開孔時の熱処理温度を大きく変化させてしまうため好ま しくない。 乾燥反応性ガスとしては、 乾燥空気、 乾燥酸素ガスあるいは 酸素を 20 %程度含んだ乾燥窒素ガス （不活性ガス） 等を使用すること ができ、 なかでも乾燥空気を用いることが好ましい。 乾燥反応性ガスは 、 空気等の反応性ガス中の水分を取り除いたものであり、 たとえば、 一 般に各種の高純度ガスとして入手できるもの等を使用することができる この様な条件下での SWN Tの保持時間を調整することで、 SWNT の開孔数を制御することができる。 保持時間は、 SWN Tの量や、 保持 温度および雰囲気条件により異るが、 1分以上、 より具体的には、 1分 〜数時間程度とすることができる。 The SWNT is kept in the dry reactive gas at a temperature in the range of 200 to 600 ° C for 1 minute or more. The holding temperature in such a heat treatment can be in a temperature range of 200 to 600 ° C., and more preferably in a temperature range of 300 to 450 ° C. The atmosphere during the heat treatment is a dry reactive gas. If water is contained in the reactive gas, it is not preferable because the chemical reactivity at high temperatures is increased and the heat treatment temperature at the time of SWNT opening is greatly changed by the change in humidity. As the dry reactive gas, dry air, dry oxygen gas or dry nitrogen gas (inert gas) containing about 20% of oxygen can be used. Among them, dry air is preferable. The dry reactive gas is obtained by removing moisture in the reactive gas such as air, and for example, a gas generally available as various high-purity gases can be used. By adjusting the SWNT holding time, the number of SWNT holes can be controlled. The holding time varies depending on the amount of SWNT, the holding temperature and the atmospheric conditions, but can be 1 minute or more, more specifically, about 1 minute to several hours.
なお、 以上の熱処理は、 上記温度範囲内の一定の温度で保持する一段 階処理であってもよいし、 上記温度範囲内の複数の温度で保持する多段 階処理であってもよいし、 さらには、 上記温度範囲内で処理温度を随時 変化させる処理方法等も考慮することができる。  Note that the above heat treatment may be a single-stage treatment in which the temperature is maintained at a constant temperature within the above temperature range, or a multi-stage treatment in which the heat treatment is maintained at a plurality of temperatures within the above temperature range. In addition, a processing method or the like in which the processing temperature is changed as needed within the above temperature range can be considered.
これによつて、 通常 SWN Tの端部に形成されているキャップをとる か、 あるいは、 管壁のカーボン結合を切断することで、 チューブ径と同 じで直径 1 〜2 n mの孔を S WN Tに開けることができる。  By taking a cap usually formed at the end of the SWNT, or by cutting the carbon bond of the tube wall, a SWN with a diameter of 1 to 2 nm, which is the same as the tube diameter, is formed. Can be opened at T.
以上のような、 この出願の発明の SWN Tの開孔方法では、 SWNT の端部だけでなく、 管壁にも開孔することができる。 そのため、 この発 明によって得られた S WN Tは、 より多彩な SWN Tの加工を可能とレ 、 単層カーボンナノチューブを用いたデバイス材料等の高機能材料の開 発に有用である。  As described above, according to the SWNT opening method of the present invention, not only the end of the SWNT but also the pipe wall can be opened. Therefore, SWNTs obtained by this invention can be used to process a wider variety of SWNTs, and are useful for developing high-functional materials such as device materials using single-walled carbon nanotubes.
また、 この出願の発明の SWN Tの開孔方法では、 レーザ一等の大掛 かりな装置や細かな作業を必要とせず、 簡便に多量の S WN Tを開孔で きるため、 経済的にも優れている。 In addition, the SWNT opening method of the invention of this application requires a large Since a large amount of SWNTs can be easily opened without the need for complicated equipment or detailed work, it is economically excellent.
以下、 添付した図面に沿って実施例を示し、 この発明 ( 実施の形態に ついてさらに詳しく説明する。 実施例  Hereinafter, examples will be shown along the attached drawings, and the present invention (the embodiments will be described in more detail.
(実施例 1 )  (Example 1)
レーザー蒸発法によつて、 すす状生成物質としての S W N Tを得た。 得られた SWN Tを硝酸等の酸化性強酸中に入れ、 1 00〜200°Cで 数時間処理した後水洗して精製することで、 主として長さ 1 ~ 1 O tm ， チューブ径 1 〜2 n mで、 チューブの両端がキャップで閉じた構造の S WN Tを得た。  SW W NT as a soot-like substance was obtained by a laser evaporation method. The obtained SWNT is placed in a strong oxidizing acid such as nitric acid, treated at 100 to 200 ° C for several hours, washed with water, and purified to obtain mainly a length of 1 to 1 O tm and a tube diameter of 1 to 2 In nm, SWNT having a structure in which both ends of the tube were closed with caps was obtained.
この SWNTを、 乾燥空気を導入した容器に入れ、 45 0°Cで 3 0時 間保持した。 処理後の SWNTを電子顕微鏡で観鑫した結果、 ほぼすベ ての SWNTの端部あるいは管壁に、 直径 〜 2 n mの孔が開孔してい るのが確認された。  This SWNT was placed in a container into which dry air had been introduced, and kept at 450 ° C. for 30 hours. As a result of observing the SWNT after the treatment with an electron microscope, it was confirmed that a hole having a diameter of about 2 nm was formed in almost all ends or the tube wall of the SWNT.
(実施例 2)  (Example 2)
実施例 1 と同様の方法で得たすす状物質の SWNTを、 精製せずに、 乾燥空気を導入した容器に入れ、 400°Cで 1時間保持した。 その結果 、 実施例 1の場合と同様に、 ほぼすベての SWN Tの端部あるいは管壁 に、 直径〗〜 2 n mの孔が開孔しているのが確認された。  The soot-like SWNT obtained in the same manner as in Example 1 was put in a container into which dry air had been introduced without purification, and kept at 400 ° C. for 1 hour. As a result, as in the case of Example 1, it was confirmed that holes having a diameter of n to 2 nm were formed in almost all the ends or the pipe walls of the SWNTs.
(実施例 3)  (Example 3)
実施例 1で得られた開孔を有する SWN T内に、 C 60分子を導入し た際の SWN Tを電子顕微鏡で観察した。 図 1 に、 SWN Tの電子顕微 鏡像を示した。 In SWN T having an opening obtained in Example 1, and the SWN T when introducing the C 60 molecule was observed with an electron microscope. Figure 1 shows an electron microscope image of SWNT.
図中の Tで示した部分の SWN T端部あるいは管壁に、 開孔が確認さ れた。 An opening was confirmed at the end of the SWN T or the pipe wall indicated by T in the figure. Was.
もちろん、 この発明は以上の例に限定されるものではなく、 細部につ いては様々な態様が可能であることは言うまでもない。  Of course, the present invention is not limited to the above-described example, and it goes without saying that various aspects are possible in detail.
【発明の効果】  【The invention's effect】
以上詳しく説明した通り、 この発明によって、 単層カーボンナノチュ ーブを用いたデバイス材料等の高機能材料の開発に有用で、 その管壁に も開孔できる、 簡便で新しい単層カーボンナノチューブの開孔方法が提 供される。  As described in detail above, the present invention is useful for the development of high-performance materials such as device materials using single-walled carbon nanotubes, and is a simple and new single-walled carbon nanotube that can be opened in the tube wall. A drilling method is provided.

Claims

請 求 の 範 囲 The scope of the claims
1 . 単層カーボンナノチューブを 2 0 0〜 6 0 0 °Cの温度範囲の乾燥 反応性ガス中に 1分以上保持することで、 単層カーボンナノチューブに 直径 1〜2 n mの孔を開孔することを特徴とする単層カーボンナノチュ ーブの開孔方法。 1. Drying single-walled carbon nanotubes in a temperature range of 200 to 600 ° C By holding in a reactive gas for 1 minute or more, holes with a diameter of 1 to 2 nm are formed in the single-walled carbon nanotubes A method for opening a single-walled carbon nanotube, characterized in that:
2 . 保持温度を、 3 0 0〜4 5 0 °Cの温度範囲とすることを特徴とす る請求項 1記載の単層カーボンナノチューブの開孔方法。  2. The method for opening single-walled carbon nanotubes according to claim 1, wherein the holding temperature is in a temperature range of 300 to 450 ° C.
3 . 開孔部が、 単層カーボンナノチューブの端部あるいは管壁である ことを特徴とする請求項 1記載の単層カーボンナノチューブの開孔方法  3. The method for opening a single-walled carbon nanotube according to claim 1, wherein the opening is an end portion or a tube wall of the single-walled carbon nanotube.
PCT/JP2001/008195 2000-09-20 2001-09-20 Method of making holes in single-wall carbon nanotube WO2002024573A1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544463B1 (en) 1999-07-26 2003-04-08 The Trustees Of The University Of Pennsylvania Hybrid materials and methods for producing the same
US8119021B2 (en) 2005-04-06 2012-02-21 Drexel University Functional nanoparticle filled carbon nanotubes and methods of their production
US10464025B2 (en) 2014-12-04 2019-11-05 Shinshu University Method for producing molded filter body

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2843382B1 (en) * 2002-08-08 2005-12-23 Centre Nat Rech Scient PROCESS FOR OPENING CARBON NANOTUBES AT THEIR END AND APPLICATIONS
JP4130385B2 (en) * 2003-07-23 2008-08-06 独立行政法人科学技術振興機構 Method for producing single-walled carbon nanotube containing guest molecule
JP4868726B2 (en) * 2004-09-14 2012-02-01 富士通株式会社 Method for controlling the structure of carbon nanotubes
JP2011082485A (en) * 2009-09-11 2011-04-21 Dowa Holdings Co Ltd Electric double-layer capacitor and manufacturing method of the same
JP2011084466A (en) * 2010-12-02 2011-04-28 Fujitsu Ltd Method for controlling structure of carbon nanotube
EP3263210A1 (en) * 2014-06-30 2018-01-03 Shinshu University Method for perforating carbon nanomaterial, and method for producing filter molded article
JP6545688B2 (en) * 2014-08-11 2019-07-17 国立大学法人信州大学 Method of manufacturing filter molded body

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5346683A (en) * 1993-03-26 1994-09-13 Gas Research Institute Uncapped and thinned carbon nanotubes and process
JPH0748110A (en) * 1993-06-03 1995-02-21 Nec Corp Purification of carbon-nanotube
US5457343A (en) * 1992-12-22 1995-10-10 Nec Corporation Carbon nanotubule enclosing a foreign material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5457343A (en) * 1992-12-22 1995-10-10 Nec Corporation Carbon nanotubule enclosing a foreign material
US5346683A (en) * 1993-03-26 1994-09-13 Gas Research Institute Uncapped and thinned carbon nanotubes and process
JPH0748110A (en) * 1993-06-03 1995-02-21 Nec Corp Purification of carbon-nanotube

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
K. HIRAHARA ET AL.: "One-dimensional metallofullerene crystal generated inside single-walled carbon nanotubes", PHYSICAL REVIEW LETTERS, vol. 85, no. 25, 18 December 2000 (2000-12-18), pages 5384 - 5387, XP002907431 *
TOSHIYA OKAZAKI ET AL.: "High yield synthesis of fullerene encapsulated single-wall carbon nanotube by vapor phase reaction", DAI 19KAI FULLERENE SOUGOU SYMPOSIUM KOUEN YOUSHISHUU, FULLERENE KENKYUU-KAI, 27 July 2000 (2000-07-27), pages 13, XP002907426 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544463B1 (en) 1999-07-26 2003-04-08 The Trustees Of The University Of Pennsylvania Hybrid materials and methods for producing the same
US6863857B2 (en) 1999-07-26 2005-03-08 The Trustees Of The University Of Pennsylvania Hybrid materials and methods for producing the same
US7332222B2 (en) 1999-07-26 2008-02-19 The Trustees Of The University Of Pennsylvania Hybrid materials and methods for producing the same
US8119021B2 (en) 2005-04-06 2012-02-21 Drexel University Functional nanoparticle filled carbon nanotubes and methods of their production
US10464025B2 (en) 2014-12-04 2019-11-05 Shinshu University Method for producing molded filter body

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