WO2001082386A1 - Dispositif semi-conducteur electroluminescent a emission laterale et son procede de production - Google Patents
Dispositif semi-conducteur electroluminescent a emission laterale et son procede de production Download PDFInfo
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- WO2001082386A1 WO2001082386A1 PCT/JP2001/003488 JP0103488W WO0182386A1 WO 2001082386 A1 WO2001082386 A1 WO 2001082386A1 JP 0103488 W JP0103488 W JP 0103488W WO 0182386 A1 WO0182386 A1 WO 0182386A1
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- Prior art keywords
- light emitting
- led chip
- substrate
- emitting device
- semiconductor light
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 238000000034 method Methods 0.000 title claims description 14
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- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to a side-emitting semiconductor light-emitting device and a method for manufacturing the same, particularly
- the present invention relates to a side-emitting semiconductor light-emitting device in which an LED chip is bonded to an electrode on a substrate, and a method for manufacturing the same.
- Conventional technology a side-emitting semiconductor light-emitting device in which an LED chip is bonded to an electrode on a substrate, and a method for manufacturing the same.
- FIG. 17A shows the semiconductor light emitting device 1 manufactured by the above manufacturing method.
- the LED chip 43 is bonded to the electrodes 42a and 42b formed on the surface of the substrate 42.
- the transparent synthetic resin 44 is formed so as to cover the LED chip 43.
- FIG. 17 (B) which is a cross-sectional view taken along the line XVIB—XVIB in FIG. 17 (A)
- the upper surface of the transparent synthetic resin 44 is smooth and swells toward the light emitting surface 45.
- a cover body 46 having a concave portion fitted with the transparent synthetic resin 44 is formed so as to cover the transparent synthetic resin 44.
- the cover unit 46 is formed of a resin having opacity and reflectivity, and light emitted from the LED chip 43 in a direction different from that of the light emitting surface 45 is reflected by the cover body 46. Therefore, the reflected light is also output from the light emitting surface 45, thereby improving the light emitting efficiency in the side direction.
- a gold wire (bonding wire) 43a for electrically connecting the LED chip 43 and the electrode 42b is bonded in a direction perpendicular to the light emitting surface 45, so that the semiconductor The width W of the light emitting element 1 in the width direction is shorter than the length D of the semiconductor light emitting element 1 in the depth direction. Further, since the light emitting surface 45 is formed only on a part of one side surface of the semiconductor light emitting device 41, the light emitting region is narrow. Therefore, when the semiconductor light emitting devices 1 are used as a backlight of a liquid crystal display (LCD) of an electronic device such as a mobile phone, a relatively large number of semiconductor light emitting devices 1 are provided on the light guide plate. In addition, it is necessary to prevent the occurrence of so-called dark areas.
- LCD liquid crystal display
- FIG. 18 (A) is a cross-sectional view of XWB—XWB in FIG. 18 (A)
- the LED chip 55 is formed by bonding paste (hereinafter referred to as “DB paste”) 6 1 and the electrode 5 It is die-bonded to 3a and wire-bonded to electrode 53b by bonding wire 55a.
- a reflector (case) 57 made of an opaque and reflective resin is provided on the substrate 53 so as to surround the LED chip 55, and is formed by the substrate 53 and the case 57. The opening is filled with a translucent resin 59.
- the bonding wires 55a are bonded almost in parallel with the width direction of the chip-type semiconductor element 51, thereby widening the light emitting surface.
- the surface 59 a, the surface 59 b and the surface 59 M formed by the light-transmitting effect 59 are the light-emitting surface.
- the chip-type semiconductor light-emitting element 51 can have a wide light-emitting surface, it is difficult to manufacture because the surface 59a is mirror-finished.
- the continuous substrate 61 and the case 57 on which the substrate 53 is continuously formed are manufactured so that about 100 pieces can be manufactured at a time.
- a continuous case 63 formed continuously is used.
- the continuous substrate 61 and the continuous case 63 are bonded, and the cross section is shown as in FIG. 19 (A).
- FIGS. 19 (A) to 19 (c) show that the continuous substrate 61 is continuous only in the horizontal direction, the continuous substrate 61 is also continuous in the direction perpendicular to the paper surface.
- the members 63a included in the continuous case 63 are formed at predetermined intervals in the lateral direction, and the cross section of the member 63a is formed in a T-shape.
- the continuous case 63 is also continuous in the direction perpendicular to the plane of the drawing like the continuous substrate 61. That is, the member 63a is formed in a rod shape so that the cross section becomes T-shaped. However, each member 63a is connected to each other at an end (not shown), thereby forming a continuous case 63.
- the mold 71 is mounted as shown in FIG. 19 (B), and the translucent resin 5 9 as shown in FIG. Is injected.
- the translucent resin 59 cures, the mold 71 is removed and diced at the position shown by the dotted line in FIG. 19 (C).
- dicing is performed for each width of the chip-type semiconductor light-emitting element 51 in a direction parallel to the paper surface. As a result, a plurality of chip-type semiconductor light-emitting elements 51 can be obtained.
- the surface 59 a forming the light emitting surface is mirror-finished by the metal surface of the projection 71 a of the mold 71.
- the convex portion 71a of the mold 71 needs to be accommodated in a gap 73 of about 0.3 to 0.5 mm existing between the members 63a, the positioning of the mold 71 Is difficult.
- the convex portion 71a is very thin and thus easily damaged.
- the surface 19a shown in FIG. 18 (A) is mirror-finished, the light output from the LED chip 55 is refracted, and the light emission intensity in the side direction becomes weak. Further, as can be seen from FIGS.
- the area where the case 57 contacts the substrate 53 is small, and the case 57 and the translucent resin 59 are different due to the difference in materials. Is not good. For this reason, the case 57 is easily detached by an external impact. Furthermore, since the LED chip 55 is die-bonded on the electrode 53 a with the DB paste 61, the lower portion (base) of the LED chip 55 is covered with the DB paste 61. For this reason, light output from the base portion of the LED chip 55 is blocked by the DB paste 61, and the luminous efficiency is reduced.
- a main object of the present invention is to provide a side-emitting semiconductor light-emitting device and a method of manufacturing the same, which can improve the light emission intensity.
- Another object of the present invention is to provide a side-emitting semiconductor light-emitting device and a method of manufacturing the same, which can prevent the case from coming off.
- Another object of the present invention is to provide a side-emitting semiconductor light-emitting device that can improve light-emitting efficiency in a desired light-emitting direction.
- a side-emitting semiconductor light emitting device comprises: a substrate having electrodes formed thereon; And a light-transmitting resin for molding the LED chip.
- the light-transmitting resin has a light-emitting surface that is orthogonal to the substrate and formed as a rough surface. By forming the light emitting surface orthogonal to the substrate with a rough surface, the light output from the LED chip is scattered on the light emitting surface. Thereby, the light emission intensity is improved.
- the light emitting surface is preferably formed by dicing.
- the method for manufacturing a side-emitting semiconductor light-emitting device includes the following steps: (a) two reflectors having openings facing each other are mounted on a substrate on which an LED chip is mounted; (b) facing the openings. Inject the transparent resin into the part; and (c) dice the cured transparent resin and the substrate in the opposite part.
- the manufactured side emission type semiconductor light emitting device uses the dicing surface of the transparent resin as the light emitting surface. The light emitting surface is roughened by the ising, and the light output from the LED chip is scattered on the light emitting surface. Thereby, the light emission intensity is improved.
- a side-emitting semiconductor light-emitting device includes a substrate on which electrodes are formed; an LED chip bonded to the substrate; a translucent resin for molding the LED chip; and a reflector for reflecting light emitted from the LED chip.
- the light-transmitting resin has a convex portion, and the reflector has a concave portion fitted with the convex portion. By fitting the convex portion and the concave portion, the transparent resin and the reflector are shaped. This ensures that the reflector does not come off easily.
- the recess is a through-hole whose diameter is increased from one main surface to the other main surface of the reflector, the reflection can be easily performed even if an external force from one main surface to the other main surface is applied to the reflector. It will not come off.
- one main surface is a surface in contact with the translucent resin, and the other main surface is a surface exposed to the outside. If the LED chip has bonding wires extending from the top surface of the chip, if the recess is formed directly above the LED chip, the bonding wire will fit into the recess and the height of the side-emitting semiconductor light emitting device can be reduced. .
- the method for manufacturing a side-emitting semiconductor light-emitting device includes the following steps: (a) placing a reflector having a concave portion on a substrate; and (b) attaching the reflector to the surface of the reflector including the inner surface of the concave portion.
- the organic matter is removed, and (c) a translucent resin is injected between the reflector and the substrate to reach the inside of the concave portion.
- a translucent resin By removing organic matter
- the translucent resin easily penetrates into the recesses, and the adhesion between the reflector and the translucent resin increases. Since the reflector and the light-transmitting resin form a body, detachment of the reflector is prevented.
- organics are removed by UV washing.
- a side-emitting semiconductor light-emitting device includes: a substrate on which electrodes are formed; and an LED chip bonded to the electrodes by a bonding paste.
- the LED chip includes a transparent base and a light-emitting substrate formed thereon. And mounted at a position shifted from the bonding paste application position to the light emitting surface side. The light emitted from the light emitting layer is output from the light emitting surface through a transparent base. Since the LED chip is mounted at a position shifted from the application position of the bonding paste to the light emitting surface side, the base is not covered with the bonding paste, thereby improving the light emission efficiency.
- the electrode preferably includes a coating area having a center shifted from the mounting position of the LED chip in a direction opposite to the light emitting surface. This makes it easy to determine the application position of the bonding paste. More preferably, the electrode further includes an auxiliary region formed closer to the light emitting surface than the application region, and a narrow connecting portion connecting the application region and the auxiliary region. By forming the auxiliary region, the LED chip is securely bonded to the electrode. Further, by connecting the application region and the auxiliary region by a narrow connecting portion, the bonding paste applied to the application region does not easily penetrate into the auxiliary region. If the center of the coating area is shifted from the center of the substrate in the direction opposite to the light emitting surface, the mounting position of the LED chip can be made the same as before.
- FIG. 1 is an illustrative view showing one embodiment of the present invention
- FIG. 2A is a sectional view of the light emitting device shown in FIG.
- FIG. 2 (B) is a cross-sectional view of the light emitting device shown in FIG.
- FIG. 3A is an illustrative view showing a continuous substrate and a continuous case used for manufacturing the light emitting device shown in FIG. 1;
- FIG. 3 (B) is an illustrative view showing a laminate in which a continuous case is bonded to a continuous substrate;
- FIG. 4 (A) is an illustrative view showing a process of manufacturing the laminate.
- FIG. 4 (B) is an illustrative view showing a process of pressing a mold against the laminate
- FIG. 4 (C) is an illustrative view showing a process of injecting a transparent resin into the laminate pressed by the mold.
- FIG. 4 (D) is an illustrative view showing a step of dicing the laminate
- FIG. 5 is an illustrative view showing another embodiment of the present invention
- FIG. 6A is a cross-sectional view of the light emitting device shown in FIG.
- FIG. 6 (B) is a cross-sectional view of the light emitting device shown in FIG. 5 taken along the line YIB-YIB;
- FIG. 7A shows a continuous substrate and a continuous cable used for manufacturing the light emitting device shown in FIG.
- FIG. 7 (B) is an illustrative view showing a laminate in which a continuous case is bonded to a continuous substrate
- FIG. 8 (A) is an illustrative view showing a process of manufacturing the laminate.
- FIG. 8 (B) is an illustrative view showing a step of pressing a mold against the laminate
- FIG. 8 (C) is an illustrative view showing a step of injecting a transparent resin into the laminate pressed against the mold.
- FIG. 8D is an illustrative view showing a step of dicing the laminate
- FIG. 9 is a sectional view showing a modification of the light emitting device shown in FIG. 5;
- FIG. 10 is an illustrative view showing another embodiment of the present invention.
- FIG. 11 (A) is a cross-sectional view of the light emitting device shown in FIG. 10 along XA-XA;
- FIG. 11 (B) is a cross-sectional view of the light emitting device shown in FIG. 10 along XB-XB;
- Figure 13 (A) is a schematic view of the LED chip and the DB paste bonded to the electrodes as viewed from above;
- Fig. 13 (B) is an illustrative view of the LED chip and DB paste bonded to the electrodes viewed from the light emitting surface side (front side);
- Figure 13 (C) is a schematic view of the LED chip and the DB paste bonded to the electrodes as viewed from the side;
- Figure 13 (D) shows the LED chip and DB paste bonded to the electrodes Is a schematic view of the light-emitting surface viewed from the opposite side (back side);
- FIG. 14 (A) is an illustrative view showing one example of an electrode formed on a substrate
- FIG. 14 (B) is an illustrative view showing a state in which an LED chip is mounted on the electrode
- FIG. 15 (B) is an illustrative view showing a laminate in which a continuous case is adhered to a continuous substrate
- FIG. 16 (A) is an illustrative view showing a process of manufacturing the laminate.
- FIG. 16 (B) is an illustrative view showing a step of pressing a mold against the laminate
- FIG. 16 (C) is an illustrative view showing a step of injecting a transparent resin into the laminate pressed against the mold
- FIG. 16 (D) is an illustrative view showing a step of dicing the laminate
- FIG. 17 (A) is an illustrative view showing an example of a conventional side-emitting semiconductor light emitting device
- FIG. 17 (B) is an illustration.
- FIG. 18 (A) is an illustrative view showing one example of a side emission semiconductor light emitting device as a background art
- FIG. 18B is a cross-sectional view of the side-emitting semiconductor light emitting device shown in FIG. 18A taken along the line XWB-XWB;
- FIG. 19A is an illustrative view showing a step of bonding a continuous case to a continuous substrate when manufacturing the side-emitting semiconductor light emitting device shown in FIG. 18A;
- FIG. 19 (B) is an illustrative view showing a step of pressing a mold against a continuous case bonded to a continuous substrate.
- FIG. 19 (C) is an illustrative view showing a step of injecting the translucent resin into the continuous case where the mold is pressed.
- a side-emitting semiconductor light-emitting device (hereinafter, simply referred to as “light-emitting device”) 10 of this embodiment is an insulating substrate formed of, for example, glass epoxy (hereinafter, simply referred to as “substrate”). Including 12). Opaque and reflective are provided on the substrate 12. (Reflector (case)) 14 made of resin to be used is provided. Leads (electrodes) 18 a and 18 b are formed on the substrate 12, and as can be seen from FIG. 2A, which is a cross-sectional view taken along the line ⁇ ⁇ ⁇ ⁇ in FIG.
- the semiconductor light emitting element (LED chip) 20 is die-bonded by a DB list (not shown).
- FIG. 2B which is a cross-sectional view taken along the line ⁇ — ⁇ in FIG. 1, the electrode 18b and the LED chip 20 are electrically connected by a bonding wire 22 such as a gold wire. Is done.
- the electrode 18a is also formed continuously from the front surface to the back surface of the substrate 14 through a through hole 12a provided on the side surface of the substrate 12, and is directly mounted on a printed circuit board (not shown). And can be electrically connected. Although not shown, the electrode 18b is similarly configured.
- the space between the substrate 12 and the case 14 is filled with a translucent resin 16 such as an epoxy resin, whereby the LED chip 20 is molded.
- the electrodes 18a and 18b are shown as being thick, but are actually formed in a thin film shape. Further, as shown in FIG. 1, the through hole 12 a is covered with an electrode 18 a on the front surface side of the substrate 12. This prevents the translucent resin 16 from flowing into the back surface of the substrate 12 during molding. Although not shown, the electrode 18b side is similarly configured. As can be seen from FIGS. 2A and 2B, the bonding wire 22 is bonded substantially parallel to the width direction W of the light emitting device 10. The light emitting surface is a surface facing the surface 16 a, the surface 16 b, and the surface 16 b, and is formed of the translucent resin 16.
- continuous substrate 30 is a substrate in which a plurality of substrates 12 are continuously formed
- continuous case 32 is a case in which a plurality of cases 14 are continuously formed.
- Such a continuous substrate 30 and a continuous case 32 are used for manufacturing the light emitting device 10.
- electrodes 18a and 18b corresponding to the number of light emitting devices 10 to be manufactured (about 100 in this embodiment) are continuously formed on the continuous substrate 30.
- LED chips 20 that are formed and correspond to the number of light emitting devices 10 to be manufactured Is bonded.
- the continuous case 32 is laminated on the continuous substrate 30 as shown in FIG. 3 (B), whereby a laminate 34 is obtained.
- FIG. 4 (A) which is a cross-sectional view taken along the line 1VA-IV A in FIG. 3 (B)
- the section of the member 32a included in the continuous case 32 is formed in a T-shape, and a plurality of members are formed.
- 32 a are formed in the horizontal direction at predetermined intervals.
- the member 32a is also continuous in a direction perpendicular to the paper surface. That is, the member 32a is formed in a rod shape so that the cross section becomes T-shaped.
- each member 3 is a cross-shaped
- the continuous case 32 has a continuous substrate at the part corresponding to the bottom of the T-shaped vertical bar.
- the continuous case 32 is subjected to UV cleaning. Specifically, in a state where the continuous substrate 30 and the continuous case 32 are bonded to each other, ultraviolet rays are irradiated for a predetermined time (for example, 3 minutes). Such UV cleaning removes organic substances adhering to the surface of the continuous case 32 (case 14), and improves the adhesion between the case 14 and the translucent resin 16. That is, the bonding state between the organic substance and the case 14 is released, and the injected translucent resin 16 and the case 14 are easily bonded.
- the translucent resin 16 is injected into a portion 38 where the openings 34 formed by the continuous substrate 30 and the continuous case 32 face each other (opposed portions) 38.
- a mold 36 formed in a flat plate shape as shown in FIG. 4 (B) is pressed against the upper surface of the continuous case 32, and as shown in FIG. 16 is injected into the opposite part 38.
- the mold 36 is removed from the continuous case 32.
- the laminate 34 filled with the translucent resin 16 is diced by a dicer (not shown) at a position indicated by a dotted line in FIG. 4C.
- FIG. 4 (D) which is a cross-sectional view of FIG. 3 (B) taken along the line [VD—] VD after injecting the translucent resin 16, the case 34 (the light emitting device 10 Dicing is also performed for each width.
- the light emitting surface of the light emitting device 10 is formed by dicing, fine unevenness is formed on the light emitting surface according to the roughness of the blade of the dicer.
- Light output from the LED chip 20 is scattered on the light emitting surface by the fine irregularities.
- the light emitting surface having excellent light scattering properties is formed by dicing, the light emitting intensity can be easily improved. Therefore, when the light-emitting device is applied to an LCD backlight provided in an electronic device or the like, the number of light-emitting devices can be reduced. Further, since the mold used for injecting the translucent resin is a flat plate, the manufacture of the mold is simple.
- a light emitting device 10 has a through hole (hereinafter simply referred to as “hole”) 24 formed above case 24, except that FIGS. Since this is the same as the embodiment in FIG. 4, duplicate description will be omitted as much as possible.
- a hole 24 is formed in the upper plate 14 a of the case 14.
- the hole 24 has a shape in which the truncated cone is inverted, and the diameter increases from the lower surface of the upper plate 14a toward the upper surface.
- the hole 24 is filled with the translucent resin 16, and the case 14 and the translucent resin 16 are integrated. That is, the transparent resin 16 and the case 14 are fitted with each other by the convex portion formed on the transparent resin 16 and the concave portion (that is, the hole 24) formed on the case 14, whereby both are formed. Are integrated.
- Such a light emitting device 10 is manufactured by the same method as the embodiment shown in FIGS.
- a continuous case 32 having a plurality of holes 24 formed thereon is laminated on a continuous substrate 30.
- FIG. 8 (A) which is an IA-HA cross section
- the top portion of the bonding wire 22 is housed in the hole 24.
- the mold 36 is pressed against the continuous case 32 as shown in FIG. 8 (B), and as shown in FIG. 8 (C).
- the translucent resin 16 is injected into the continuous case 32.
- the laminate 34 is diced as shown in FIG. 8D, whereby a plurality of light emitting devices 10 are obtained.
- the case 14 and the light-transmitting resin 16 are integrally formed by providing the hole 24 in the case 14 and allowing the light-transmitting resin 16 to enter the hole 24. ing. For this reason, even when a force is applied to the case 14 in the width direction W of the light emitting device 10 shown in FIG. 1, the convex portion 16 c of the translucent resin 16 acts as a stopper, and Separation of 14 is prevented. Further, since the diameter of the hole 24 is increased upward, the case 14 does not come off even when a force is applied in the upward direction H. Further, the diameter of the hole 24 is increased toward the upper surface of the upper plate 14a, so that the light-transmitting resin 16 is hardly penetrated into the hole 24. Since the adhesion between the light-transmitting resin 16 and the case 14 is improved, the light-transmitting resin 16 easily enters the holes 24.
- the hole 24 is formed immediately above the LED chip 20, the top 22 a of the bonding wire 22 extending from the upper surface of the chip is accommodated in the hole 24. Therefore, even if the height of the case 14 is reduced, the bonding wire 22 does not come into contact with the case 14, and it is possible to prevent the bonding wire 22 from breaking when the case 14 is attached. Furthermore, since the main body of the light emitting device 10 can be formed thin (less than the thickness of the light guide plate described above), light output from the LED chip 20 efficiently enters the light guide plate.
- the lighting test device of the top emission semiconductor light emitting device is also used in the light emitting device 10 of this embodiment. Can be applied. That is, there is no need to separately provide a test device, and there is no need to change the position of the optical sensor provided in the test device.
- the light emission from the light emitting surface (side surface) can be obtained by multiplying the light emission from the hole 24 by the ratio of the area of the hole 24 to the area of the light emitting surface.
- the shape of the hole is formed in the shape of a truncated cone pointing downward, but the hole may be formed in the shape of a truncated cone pointing upward as shown in FIG. That is, a hole whose diameter is reduced upward may be formed.
- the convex portion of the translucent resin may be broken, which may cause disconnection of the bonding wire.
- the case may be detached by a large upward force, but disconnection of the bonding wire can be avoided.
- the hole may be formed in a cylindrical shape.
- the friction in the portion in contact with the hole increases, so that the mold is difficult to come off, and the molded continuous case may be damaged. Therefore, in this embodiment, a tapered hole whose diameter is increased in the upward direction is formed to solve such a problem.
- the case (continuous case) is subjected to UV cleaning.
- organic substances may be removed by plasma cleaning and sputtering.
- the adhesiveness after UV cleaning was the best.
- a vacuum system is required for plasma cleaning and sputter cleaning, and the apparatus itself is expensive.
- the surface of the case (continuous case) including the inner surface of the hole is cleaned, but if at least the inner surface of the hole is cleaned, the transparent resin easily enters the hole. Can be done.
- the light emitting device 10 of the other embodiment is the same as the embodiment of FIGS. 1 to 4 except that the electrode 18a is formed as shown in FIG. Duplicate explanations are omitted as much as possible.
- the DB paste is particularly illustrated by adding reference numeral "24".
- the DB paste 24 is shown using oblique lines in FIGS. 11 (A), 11 (B), 12, and 13 (A) to 13 (D). The hatched lines do not indicate cross sections.
- the LED chip 20 includes a P-type electrode (bonding pad) 20a connected to the bonding wire 22, and an n-type electrode 20e connected to the electrode 18a.
- the n-type electrode 20e is formed of a thin film like the electrodes 18a and 18b.
- the LED chip 20 also includes a p-layer 20b, a light-emitting layer 20c, and an n-layer 20d, and is stacked on the n-type electrode 20e in the order of n-layer 20d ⁇ light-emitting layer 20c ⁇ p-layer 20b.
- Each of the p-layer 20b and the n-layer 20d is formed of a transparent semiconductor G a As.
- the n-type electrode 20e is formed of a reflective copper thin film or the like. Therefore, the light emitted from the light emitting layer 20c is output to the outside of the LED chip 20 via the p layer 20b and the n layer 20d. Further, the light emitted below the light emitting layer 20c is reflected on the surface of the n-type electrode 20e, and is output to the outside of the LED chip 20 via the n-layer 20d.
- the LED chip 20 is die-bonded to the electrode 18a with the DB paste 26, the base 20f including the n-layer 20d and the n-type electrode 20e is covered with the DB paste 26, and the n-layer 20d.
- the light output through is DB paste 26 It will be blocked by.
- the LED chip 20 is die-bonded to the positions shown in FIGS. 13A to 13D to make maximum use of light in the light emitting direction P.
- the LED chip 20 is die-bonded to the electrode 18a in a state where the LED chip 20 is shifted downward (toward the light emitting direction P) from the center of the DB paste 26. Therefore, when the LED chip 20 is viewed from the light emitting surface 16a side, as shown in FIG. 13B, on the light emitting direction P side of the LED chip 20, the portion covered by the DB paste 26 decreases. When the LED chip 20 is viewed from the side opposite to the surface 16b, as shown in FIG. 13 (C), the amount of the DB paste 26 continuously increases from the center of the DB paste 26 toward the light emitting direction P. is decreasing.
- the base 20f of the LED chip 20 is covered as shown in FIG. 13 (D). This is because the surface facing the light emitting surface 16a is close to the center of the DB paste 26, and the amount of the DB paste 26 increases.
- the electrode 18a includes an application area 28a for applying the DB paste 24 and an auxiliary area 28b.
- the application area 28a is circular, and the center Y thereof is shifted leftward from the center X of the substrate 12 (the direction opposite to the light emitting direction P).
- the auxiliary region 28b is a vertically long rectangle, and is formed on the right side (the light emitting direction P side) of the application region 28a. Further, the application region 28a and the auxiliary region 28b are connected to each other by a connecting portion 28c formed to be narrow.
- the DB paste 26 is dropped on the center Y of the application area 28a and spreads in a substantially circular shape. Then, as shown in FIG. 14B, the LED chip 20 is mounted on the center X of the substrate 12. Therefore, the surface on the light emitting surface 16a side of the LED chip 20 is not covered by the DB paste 26, so that the light output in the light emitting direction P can be prevented from being blocked by the DB paste 26.
- the LED chip 20 can be reliably connected to the electrode 18a. 14 (A) and 14 (B), in order to easily explain the electrode 18a, Illustration of DB paste 26 is omitted.
- the size of the application region 28a is determined by the application amount and the viscosity of the DB paste 26, and when the size of the application region 28a is determined, the formation position (center Y) of the application region 28a is also determined. It is determined. In addition, since the application region 28a and the auxiliary region 28b are connected (connected) by the connecting portion 28c having a narrow width, the DB paste 26 is prevented from entering the auxiliary region 28b. Is done. That is, the amount of the DB paste 24 on the light emitting surface 16a side can be reduced.
- Such a light emitting device 10 is manufactured by the same method as the embodiment shown in FIGS. That is, as shown in FIG. 15 (A), the continuous case 32 is laminated on the continuous substrate 30 to form the laminate 34 shown in FIGS. 15 (B) and 16 (A). After the laminate 34 is formed, after the UV cleaning for a predetermined time, the mold 36 is pressed against the continuous case 32 as shown in FIG. 16 (B), and is shown in FIG. 16 (C). As described above, the translucent resin 16 is injected into the continuous case 32. When the translucent resin 16 is cured, the laminate 34 is diced at the position indicated by the dotted line in FIG. 16D, whereby a plurality of light emitting devices 10 are obtained.
- the mounting position of the LED chip 20 is shifted to the light emitting surface 16 a side from the center Y of the DB paste 26, so that the surface of the LED chip 20 on the light emitting surface side is the DB paste 2. 6 will not be covered. That is, the light emitted in the desired light emission direction is not blocked by the DB paste, so that the light emission efficiency can be improved.
- the shape of the electrode is not limited to the shape shown in FIG. 14 (A), but may be any shape that can at least uniquely determine the application position of the DB paste. Further, if the electrodes are formed as shown in FIG. 14A and the application position of the DB paste is changed, the light emitting device of this embodiment can be manufactured using a conventional manufacturing apparatus. While this invention has been described and illustrated in detail, it is obvious that it is used by way of illustration and example only and should not be construed as limiting, the spirit and scope of the invention being attached to Limited only by the language of the claim.
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Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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EP01922031A EP1204151A4 (en) | 2000-04-24 | 2001-04-23 | SIDE-EMITTING LUMINAIRE DIODE AND MANUFACTURING METHOD |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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JP2000-122255 | 2000-04-24 | ||
JP2000122255A JP2001308389A (ja) | 2000-04-24 | 2000-04-24 | 側面発光半導体発光装置およびその製造方法 |
JP2000-134159 | 2000-05-08 | ||
JP2000134159A JP2001320092A (ja) | 2000-05-08 | 2000-05-08 | 側面発光半導体発光装置およびその製造方法 |
JP2000-152249 | 2000-05-24 | ||
JP2000152249A JP2001332766A (ja) | 2000-05-24 | 2000-05-24 | 側面発光半導体発光装置 |
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Application Number | Title | Priority Date | Filing Date |
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US10/019,508 A-371-Of-International US20020123163A1 (en) | 2000-04-24 | 2001-04-23 | Edge-emitting light-emitting semiconductor device and method of manufacture thereof |
US10/792,200 Division US6919586B2 (en) | 2000-04-24 | 2004-03-01 | Side-emission type semiconductor light-emitting device and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
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WO2001082386A1 true WO2001082386A1 (fr) | 2001-11-01 |
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PCT/JP2001/003488 WO2001082386A1 (fr) | 2000-04-24 | 2001-04-23 | Dispositif semi-conducteur electroluminescent a emission laterale et son procede de production |
Country Status (6)
Country | Link |
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US (4) | US20020123163A1 (ja) |
EP (1) | EP1204151A4 (ja) |
KR (2) | KR100772774B1 (ja) |
CN (1) | CN1189951C (ja) |
TW (1) | TW523935B (ja) |
WO (1) | WO2001082386A1 (ja) |
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Also Published As
Publication number | Publication date |
---|---|
US20020123163A1 (en) | 2002-09-05 |
KR20070013336A (ko) | 2007-01-30 |
CN1189951C (zh) | 2005-02-16 |
US20040169187A1 (en) | 2004-09-02 |
TW523935B (en) | 2003-03-11 |
US6919586B2 (en) | 2005-07-19 |
KR100832956B1 (ko) | 2008-05-27 |
US20080283862A1 (en) | 2008-11-20 |
US7312479B2 (en) | 2007-12-25 |
US20050236634A1 (en) | 2005-10-27 |
KR100772774B1 (ko) | 2007-11-01 |
CN1366715A (zh) | 2002-08-28 |
EP1204151A1 (en) | 2002-05-08 |
EP1204151A4 (en) | 2006-10-18 |
KR20020025902A (ko) | 2002-04-04 |
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