JP6099679B2 - ビーム発光型半導体素子、照明装置及び表示装置 - Google Patents
ビーム発光型半導体素子、照明装置及び表示装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 276
- 239000000463 material Substances 0.000 claims description 55
- 230000003287 optical effect Effects 0.000 claims description 49
- 238000005286 illumination Methods 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 22
- 239000008393 encapsulating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 5
- -1 BaSO 4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 229910001512 metal fluoride Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000005022 packaging material Substances 0.000 claims 2
- 230000035699 permeability Effects 0.000 claims 2
- 238000000034 method Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 238000000465 moulding Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Description
Claims (17)
- ビーム発光型半導体素子(100)であって、
ボリュームエミッタ型半導体チップ(1)と、
第1の反射素子(21)と、
第2の反射素子(22)と、
少なくとも1つのビーム出射面(3)とを備え、
前記半導体チップ(1)は、第1の主表面(11)と、該第1の主表面(11)に相対する第2の主表面(12)とを有し、
前記第1の反射素子(21)は、前記第1の主表面(11)に配設され、前記半導体チップ(1)の動作中に前記第1の主表面(11)を通って出射した電磁ビームを、前記第1の主表面(11)の方へ戻すように反射させ、
前記第2の反射素子(22)は、前記第2の主表面(12)に配設され、前記半導体チップ(1)の動作中に前記第2の主表面(12)を通って出射した電磁ビームを、前記第2の主表面(12)の方へ戻すように反射させ、
前記少なくとも1つのビーム出射面(3)は、前記半導体素子(100)の動作中に生成された電磁ビームを前記半導体素子(100)から出射させ、
前記少なくとも1つのビーム出射面(3)は、前記半導体チップ(1)の前記第1の主表面(11)と前記第2の主表面(12)とに対して横断方向に延在し、
前記半導体チップ(1)は、前記第1及び第2の主表面(11,12)に対して横断方向に延在する少なくとも1つの側面(13)を含み、
ビーム透過性の被包材(5)が、前記半導体チップ(1)の前記第2の主表面(12)と前記少なくとも1つの側面(13)のすべてを覆い、それらと直接接触し、
前記ビーム透過性の被包材(5)は、発光変換材料の粒子で充填されており、
前記ビーム透過性の被包材(5)は、前記第2の反射素子(22)で埋められるキャビティ(6)を、少なくとも部分的に画定しており、
前記ビーム透過性の被包材(5)は、前記第2の反射素子(22)と直接接触接続する領域において、凹面状に湾曲しており、
前記ビーム透過性の被包材(5)は、前記ビーム発光型半導体素子(100)の側面から前記半導体チップ(1)の方向に向けてその厚さに関し先細になっており、
前記第2の反射素子(22)は、部分的に、ビーム透過性に構成されており、前記第2の反射素子(22)の、前記半導体チップ(1)とは反対側が前記ビーム発光型半導体素子のビーム出射面(3)を形成していることを特徴とするビーム発光型半導体素子(100)。 - 前記第2の反射素子(22)は、前記第2の主表面(12)を完全に覆っている、請求項1記載のビーム発光型半導体素子(100)。
- 前記第2の反射素子(22)及び/又は前記第1の反射素子(21)は、反射的でかつ電気絶縁性の層として構成され、前記電気絶縁性の層は、散乱性粒子又は反射性粒子が導入されたマトリックス材料を含んでいる、請求項1または2記載のビーム発光型半導体素子(100)。
- 前記粒子は、少なくともTiO2,BaSO4,ZnO,AlxOy,ZrO2,金属フッ化物,酸化ケイ素の材料の1つからなるか又は前記材料の少なくとも1つを含む、請求項3記載のビーム発光型半導体素子(100)。
- 前記第2の反射素子(22)及び/又は前記第1の反射素子(21)は、少なくとも部分的に前記半導体チップ(1)の対応する前記主表面(12,11)に直接接触している、請求項1から4いずれか1項記載のビーム発光型半導体素子(100)。
- 前記半導体チップ(1)の前記第1の主表面(11)が支持体(4)に固定され、前記支持体(4)は、前記第1の反射素子(21)の少なくとも一部を形成し、及び/又は、前記第1の反射素子(21)は、少なくとも部分的に、前記支持体(4)と前記第1の主表面(11)との間に配置されている、請求項1から5いずれか1項記載のビーム発光型半導体素子(100)。
- 前記半導体チップ(1)の第2の主表面(12)は、前記第2の反射素子(22)で埋められる複数の切欠き(14)を有している、請求項1から6いずれか1項記載のビーム発光型半導体素子(100)。
- 反射コーティング(23)を含んでおり、該反射コーティング(23)は、前記半導体チップ(1)の前記主表面(11,12)の1つにおける接続箇所(15)を少なくとも部分的に覆っている、請求項1から7いずれか1項記載のビーム発光型半導体素子(100)。
- 前記第1の反射素子及び/又は前記第2の反射素子(21,22)は、反射的でかつ電気絶縁性の層として形成され、該層は、散乱性粒子若しくは反射性粒子が取り込まれたマトリックス材料を含み、さらに前記反射的でかつ電気絶縁性の層は、その厚みにおいて構造化されている、請求項1から8いずれか1項記載のビーム発光型半導体素子(100)。
- 前記第1の反射素子及び/又は前記第2の反射素子(21,22)、並びに前記ビーム透過性の被包材(5)は、同じ材料で形成されている、請求項9記載のビーム発光型半導体素子(100)。
- 動作中に前記半導体素子から発光されるビームの少なくとも5%、最大で15%が前記第2の反射素子(22)を通って出射する、請求項10記載のビーム発光型半導体素子(100)。
- 前記第2の反射素子(22)と前記第1の反射素子(21)または前記第2の反射素子(22)または前記第1の反射素子(21)は、少なくとも領域毎に、前記半導体チップの対応する第2若しくは第1主表面(11,12)と直接接触接続する、請求項1から11いずれか1項記載のビーム発光型半導体素子(100)。
- 光導波路(7)と、
請求項1から12いずれか1項記載のビーム発光型半導体素子(100)とを備えた照明装置(101)において、
前記光導波路(7)が、切欠き(71)を有しており、
前記ビーム発光型半導体素子(100)は、前記切欠き(71)内に配設されており、
前記光導波路(7)は、ビーム出射面(3)の少なくとも1つにおいて前記半導体素子(100)を取り囲んでいることを特徴とする、照明装置(101)。 - 前記切欠き(71)は、貫通孔である、請求項13記載の照明装置(101)。
- 少なくとも2つのビーム発光型半導体素子(100)を含み、前記各ビーム発光型半導体素子は、前記光導波路(7)の切欠き(71)内に配設されている、請求項13または14記載の照明装置(101)。
- 第2の反射素子(22)の、半導体チップ(1)とは反対側の外面(221)が、前記光導波路(7)のビーム出射面(74)から突出しているか又は前記光導波路(7)のビーム出射面(74)と面一に終端している、請求項13から15いずれか1項記載の照明装置(101)。
- 請求項13から16いずれか1項記載の照明装置(101)を備えている表示装置であって、
画像形成素子(102)を含んでおり、
前記照明装置(101)は、前記画像形成素子(102)を背面から照明しており、
前記光導波路(7)のビーム出射面(74)は、前記画像形成素子(102)に向けて配向されていることを特徴とする、表示装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012102114.7A DE102012102114B4 (de) | 2012-03-13 | 2012-03-13 | Strahlungsemittierendes Halbleiterbauteil, Beleuchtungsvorrichtung und Anzeigevorrichtung |
DE102012102114.7 | 2012-03-13 | ||
PCT/EP2013/055001 WO2013135696A1 (de) | 2012-03-13 | 2013-03-12 | Strahlungsemittierendes halbleiterbauteil, beleuchtungsvorrichtung und anzeigevorrichtung |
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-
2012
- 2012-03-13 DE DE102012102114.7A patent/DE102012102114B4/de active Active
-
2013
- 2013-03-12 US US14/384,092 patent/US20150049510A1/en not_active Abandoned
- 2013-03-12 WO PCT/EP2013/055001 patent/WO2013135696A1/de active Application Filing
- 2013-03-12 CN CN201380014414.3A patent/CN104170104B/zh active Active
- 2013-03-12 JP JP2014561419A patent/JP6099679B2/ja active Active
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WO2013135696A1 (de) | 2013-09-19 |
CN104170104B (zh) | 2016-12-28 |
DE102012102114A1 (de) | 2013-09-19 |
US20150049510A1 (en) | 2015-02-19 |
CN104170104A (zh) | 2014-11-26 |
DE102012102114B4 (de) | 2021-09-16 |
JP2015512157A (ja) | 2015-04-23 |
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