US20150099368A1 - Dry etching method - Google Patents
Dry etching method Download PDFInfo
- Publication number
- US20150099368A1 US20150099368A1 US14/447,681 US201414447681A US2015099368A1 US 20150099368 A1 US20150099368 A1 US 20150099368A1 US 201414447681 A US201414447681 A US 201414447681A US 2015099368 A1 US2015099368 A1 US 2015099368A1
- Authority
- US
- United States
- Prior art keywords
- etching
- gas
- layers
- sige
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000001312 dry etching Methods 0.000 title claims abstract description 17
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 88
- 238000005530 etching Methods 0.000 claims abstract description 88
- 238000001020 plasma etching Methods 0.000 claims description 16
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 11
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 3
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 41
- 239000006227 byproduct Substances 0.000 description 16
- 150000002500 ions Chemical class 0.000 description 16
- 239000010408 film Substances 0.000 description 15
- 230000003247 decreasing effect Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32201—Generating means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
Definitions
- SiGe silicon-germanium
- FIG. 3A As semiconductor device structure employing such SiGe there is known laminated structure with Si layers and SiGe layers as shown in FIG. 3A , which is expected to be applied for semiconductor devices in the 22 nm generation and thereafter. In this laminated structure with Si layers and SiGe layers it is required to isotropically etch each of the SiGe layers selectively relative to each of the Si layers.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/196,284 US11018014B2 (en) | 2013-10-08 | 2016-06-29 | Dry etching method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013210656A JP6138653B2 (ja) | 2013-10-08 | 2013-10-08 | ドライエッチング方法 |
JP2013-210656 | 2013-10-08 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/196,284 Division US11018014B2 (en) | 2013-10-08 | 2016-06-29 | Dry etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20150099368A1 true US20150099368A1 (en) | 2015-04-09 |
Family
ID=52777282
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/447,681 Abandoned US20150099368A1 (en) | 2013-10-08 | 2014-07-31 | Dry etching method |
US15/196,284 Active US11018014B2 (en) | 2013-10-08 | 2016-06-29 | Dry etching method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/196,284 Active US11018014B2 (en) | 2013-10-08 | 2016-06-29 | Dry etching method |
Country Status (4)
Country | Link |
---|---|
US (2) | US20150099368A1 (ko) |
JP (1) | JP6138653B2 (ko) |
KR (2) | KR20150041567A (ko) |
TW (1) | TWI667707B (ko) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170330934A1 (en) * | 2016-05-16 | 2017-11-16 | Globalfoundries Inc. | Devices and methods of forming self-aligned, uniform nano sheet spacers |
CN110021524A (zh) * | 2017-12-27 | 2019-07-16 | 东京毅力科创株式会社 | 蚀刻方法 |
US10600889B2 (en) * | 2017-12-22 | 2020-03-24 | International Business Machines Corporation | Nanosheet transistors with thin inner spacers and tight pitch gate |
US10892158B2 (en) | 2019-04-01 | 2021-01-12 | Hitachi High-Tech Corporation | Manufacturing method of a semiconductor device and a plasma processing apparatus |
WO2021216283A1 (en) * | 2020-04-21 | 2021-10-28 | Praxair Technology, Inc. | Novel methods for gas phase selective etching of silicon-germanium layers |
WO2022039849A1 (en) * | 2020-08-18 | 2022-02-24 | Applied Materials, Inc. | Methods for etching structures and smoothing sidewalls |
WO2022039848A1 (en) * | 2020-08-18 | 2022-02-24 | Applied Materials, Inc. | Methods for etching structures with oxygen pulsing |
WO2022173633A1 (en) * | 2021-02-09 | 2022-08-18 | Tokyo Electron Limited | Plasma etching techniques |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6516542B2 (ja) * | 2015-04-20 | 2019-05-22 | 東京エレクトロン株式会社 | 被エッチング層をエッチングする方法 |
JP6619703B2 (ja) * | 2016-06-28 | 2019-12-11 | 株式会社Screenホールディングス | エッチング方法 |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US11011383B2 (en) | 2018-01-22 | 2021-05-18 | Tokyo Electron Limited | Etching method |
JP7145740B2 (ja) * | 2018-01-22 | 2022-10-03 | 東京エレクトロン株式会社 | エッチング方法 |
KR102258361B1 (ko) * | 2019-09-10 | 2021-05-28 | 포항공과대학교 산학협력단 | 펄스형 전력을 사용한 플라즈마 활성종 생성방법 |
JP7345334B2 (ja) * | 2019-09-18 | 2023-09-15 | 東京エレクトロン株式会社 | エッチング方法及び基板処理システム |
WO2021085158A1 (ja) * | 2019-10-29 | 2021-05-06 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及びナノワイヤ又はナノシートのトランジスタの製造方法 |
WO2021181613A1 (ja) * | 2020-03-12 | 2021-09-16 | 株式会社日立ハイテク | プラズマ処理方法 |
US20240194487A1 (en) | 2021-06-17 | 2024-06-13 | Hitachi High-Tech Corporation | Plasma processing method and manufacturing method of semiconductor device |
US20230360921A1 (en) * | 2022-05-09 | 2023-11-09 | Tokyo Electron Limited | Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modification |
JP2024083014A (ja) * | 2022-12-09 | 2024-06-20 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080073635A1 (en) * | 2006-09-21 | 2008-03-27 | Masahiro Kiyotoshi | Semiconductor Memory and Method of Manufacturing the Same |
US20090008705A1 (en) * | 2007-07-05 | 2009-01-08 | International Business Machines Corporation | Body-contacted finfet |
US20130119018A1 (en) * | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
US20130153970A1 (en) * | 2011-12-20 | 2013-06-20 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Transistor structure, method for manufacturing a transistor structure, force-measuring system |
US20130241028A1 (en) * | 2012-03-16 | 2013-09-19 | Semiconductor Manufacturing International Corp. | Silicon-on-insulator substrate and fabrication method |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2654003B2 (ja) * | 1986-06-30 | 1997-09-17 | 株式会社東芝 | ドライエツチング方法 |
US5155657A (en) * | 1991-10-31 | 1992-10-13 | International Business Machines Corporation | High area capacitor formation using material dependent etching |
JP4056195B2 (ja) | 2000-03-30 | 2008-03-05 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
JP3974356B2 (ja) * | 2001-08-31 | 2007-09-12 | 芝浦メカトロニクス株式会社 | SiGe膜のエッチング方法 |
US7317434B2 (en) * | 2004-12-03 | 2008-01-08 | Dupont Displays, Inc. | Circuits including switches for electronic devices and methods of using the electronic devices |
JP4738194B2 (ja) * | 2006-02-09 | 2011-08-03 | 芝浦メカトロニクス株式会社 | エッチング方法及び半導体装置の製造方法 |
JP5491170B2 (ja) * | 2006-04-10 | 2014-05-14 | ゾルファイ フルーオル ゲゼルシャフト ミット ベシュレンクテル ハフツング | エッチング方法 |
US7863124B2 (en) * | 2007-05-10 | 2011-01-04 | International Business Machines Corporation | Residue free patterned layer formation method applicable to CMOS structures |
EP2409335B1 (en) * | 2009-03-17 | 2018-06-06 | IMEC vzw | Method for plasma texturing using two dry etching steps |
US10658161B2 (en) * | 2010-10-15 | 2020-05-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
KR20120073727A (ko) | 2010-12-27 | 2012-07-05 | 삼성전자주식회사 | 스트레인드 반도체 영역을 포함하는 반도체 소자와 그 제조방법, 및 그것을 포함하는 전자 시스템 |
TWI450308B (zh) | 2011-07-27 | 2014-08-21 | Hitachi High Tech Corp | Plasma processing method |
JP5774428B2 (ja) * | 2011-09-28 | 2015-09-09 | 株式会社日立ハイテクノロジーズ | ドライエッチング方法およびプラズマエッチング装置 |
CN103531475A (zh) * | 2012-07-03 | 2014-01-22 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
-
2013
- 2013-10-08 JP JP2013210656A patent/JP6138653B2/ja active Active
-
2014
- 2014-07-01 TW TW103122642A patent/TWI667707B/zh active
- 2014-07-18 KR KR20140091132A patent/KR20150041567A/ko active Application Filing
- 2014-07-31 US US14/447,681 patent/US20150099368A1/en not_active Abandoned
-
2016
- 2016-06-29 US US15/196,284 patent/US11018014B2/en active Active
- 2016-08-11 KR KR1020160102185A patent/KR101826642B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080073635A1 (en) * | 2006-09-21 | 2008-03-27 | Masahiro Kiyotoshi | Semiconductor Memory and Method of Manufacturing the Same |
US20090008705A1 (en) * | 2007-07-05 | 2009-01-08 | International Business Machines Corporation | Body-contacted finfet |
US20130119018A1 (en) * | 2011-11-15 | 2013-05-16 | Keren Jacobs Kanarik | Hybrid pulsing plasma processing systems |
US20130153970A1 (en) * | 2011-12-20 | 2013-06-20 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Transistor structure, method for manufacturing a transistor structure, force-measuring system |
US20130241028A1 (en) * | 2012-03-16 | 2013-09-19 | Semiconductor Manufacturing International Corp. | Silicon-on-insulator substrate and fabrication method |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10388729B2 (en) * | 2016-05-16 | 2019-08-20 | Globalfoundries Inc. | Devices and methods of forming self-aligned, uniform nano sheet spacers |
US20170330934A1 (en) * | 2016-05-16 | 2017-11-16 | Globalfoundries Inc. | Devices and methods of forming self-aligned, uniform nano sheet spacers |
US11329143B2 (en) | 2017-12-22 | 2022-05-10 | International Business Machines Corporation | Nanosheet transistors with thin inner spacers and tight pitch gate |
US10600889B2 (en) * | 2017-12-22 | 2020-03-24 | International Business Machines Corporation | Nanosheet transistors with thin inner spacers and tight pitch gate |
CN110021524A (zh) * | 2017-12-27 | 2019-07-16 | 东京毅力科创株式会社 | 蚀刻方法 |
US10892158B2 (en) | 2019-04-01 | 2021-01-12 | Hitachi High-Tech Corporation | Manufacturing method of a semiconductor device and a plasma processing apparatus |
WO2021216283A1 (en) * | 2020-04-21 | 2021-10-28 | Praxair Technology, Inc. | Novel methods for gas phase selective etching of silicon-germanium layers |
WO2022039849A1 (en) * | 2020-08-18 | 2022-02-24 | Applied Materials, Inc. | Methods for etching structures and smoothing sidewalls |
WO2022039848A1 (en) * | 2020-08-18 | 2022-02-24 | Applied Materials, Inc. | Methods for etching structures with oxygen pulsing |
US11527414B2 (en) | 2020-08-18 | 2022-12-13 | Applied Materials, Inc. | Methods for etching structures with oxygen pulsing |
US11658042B2 (en) | 2020-08-18 | 2023-05-23 | Applied Materials, Inc. | Methods for etching structures and smoothing sidewalls |
WO2022173633A1 (en) * | 2021-02-09 | 2022-08-18 | Tokyo Electron Limited | Plasma etching techniques |
US11538690B2 (en) | 2021-02-09 | 2022-12-27 | Tokyo Electron Limited | Plasma etching techniques |
Also Published As
Publication number | Publication date |
---|---|
US11018014B2 (en) | 2021-05-25 |
JP2015076459A (ja) | 2015-04-20 |
KR20150041567A (ko) | 2015-04-16 |
TWI667707B (zh) | 2019-08-01 |
JP6138653B2 (ja) | 2017-05-31 |
KR101826642B1 (ko) | 2018-02-07 |
KR20160100287A (ko) | 2016-08-23 |
TW201515092A (zh) | 2015-04-16 |
US20160307765A1 (en) | 2016-10-20 |
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