US20040058080A1 - Method for creating silicon dioxide film - Google Patents

Method for creating silicon dioxide film Download PDF

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Publication number
US20040058080A1
US20040058080A1 US10/470,060 US47006003A US2004058080A1 US 20040058080 A1 US20040058080 A1 US 20040058080A1 US 47006003 A US47006003 A US 47006003A US 2004058080 A1 US2004058080 A1 US 2004058080A1
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US
United States
Prior art keywords
silicon
silicon dioxide
dioxide film
film
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US10/470,060
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English (en)
Inventor
Masahiro Kawasaki
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Seiren KST Corp
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Individual
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Filing date
Publication date
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Assigned to KST WORLD CORP. reassignment KST WORLD CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KAWASAKI, MASAHIRO
Publication of US20040058080A1 publication Critical patent/US20040058080A1/en
Priority to US11/878,717 priority Critical patent/US7754286B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation

Definitions

  • the present invention relates to a method of forming a thick silicon dioxide film on a silicon substrate.
  • a material obtained by forming a thick silicon dioxide film on a silicon substrate has been used for the devices that are used in such fields as soft photonics which is chiefly concerned to optical data communication and processing technology, amenity photonics which aims at utilizing a light for the optical display and optical input/output which are easy for human beings and environment to use, and hard photonics challenging ultimateness of a new source of light and developing a technology for utilizing optical measurement.
  • An optical waveguide in an optical integrated device is formed by burying a core layer having an optical waveguide circuit pattern in a silicon dioxide film on a silicon substrate.
  • the silicon dioxide film must have a thickness which is at least not smaller than ten and several microns if the thickness of the core layer is selected to be, for example, the almost same size as that of an optical fiber that is connected.
  • a typical method of forming the silicon dioxide film on the silicon substrate can be represented by a well-known direct thermal oxidation method.
  • the direct thermal oxidation method is to form a silicon dioxide film by directly thermally oxidizing the surface of the silicon substrate.
  • the thickness of the film that is formed varies in proportion to the time of oxidation when it has a small thickness.
  • formation of the film having a large thickness takes a time in proportion to the one-half power of the time of oxidation. It is therefore difficult to form a film having a thickness of as large as ten and several microns or more.
  • the present applicant has developed a method of forming a silicon dioxide film by the deposition of polysilicon (Japanese Patent Application No. 342893/2000 “Method of Forming a Silicon Dioxide Film and Method of Forming Optical Waveguide”).
  • This method is to form a silicon dioxide layer of a desired thickness by depositing polysilicon on a silicon substrate, followed by thermal oxidation treatment to form a silicon dioxide film, then, newly depositing polysilicon on the thus formed silicon dioxide film, followed by thermal oxidation treatment to form a silicon dioxide film, and repeating the above operations.
  • the silicon dioxide film formed by the deposition of polysilicon has relatively rough surfaces.
  • a silicon dioxide film is deposited on these surfaces for forming an optical waveguide core layer, a rough surface exists on the boundary surface causing light to be scattered and inviting a possibility of increasing optical loss.
  • the surfaces of the silicon dioxide film are flattened prior to forming the core layer to improve the surface roughness.
  • a thick film formed by the deposition of polysilicon is favorable for forming a silicon dioxide film on a large quantity of wafers.
  • formation of the film having a thickness of, for example, ten and several microns requires a time of several days though this is still quicker than the method based on the direct thermal oxidation.
  • a reduced-pressure vapor-phase deposition method which is a typical silicon film deposition method, it becomes necessary to use a production facility working under a pressure reduced to a large degree. It has, therefore, been desired to provide a production system capable of suitably meeting a variety of customer's requirements for forming the silicon dioxide film, a requested delivery time and a quantity of production, and others.
  • the present invention has been accomplished in view of the above-mentioned fact, and its technical subject is to provide a method of forming a silicon dioxide film, which comprises repeating steps of depositing a silicon layer on a silicon substrate and then, subjecting the silicon layer to a thermal oxidation treatment to form a silicon dioxide film of a predetermined thickness, and which makes it possible to suitably select the surface roughness of the silicon dioxide film that is formed and the rate of growth of the silicon film that is deposited.
  • a method of forming a silicon dioxide film comprising the steps of:
  • step of deposition and the step of thermal oxidation being repeated a plural number of times.
  • the silicon film is deposited by selecting any one of polysilicon deposition, epitaxial silicon deposition or amorphous silicon deposition, or by selecting a combination thereof so that the surface roughness and the rate of growth of the silicon dioxide film that is formed can be suitably changed.
  • the thickness of the silicon film formed per one time of the deposition step is not larger than 5 ⁇ m.
  • FIG. 1 is a diagram illustrating the steps of a method of forming a silicon dioxide film according to the present invention.
  • FIG. 2 is a table showing one example of results of the experiment.
  • a method of forming a silicon dioxide film according to the present invention will now be described in detail with reference to the case of forming a silicon dioxide film having a thickness of 15 ⁇ m as one example.
  • a silicon substrate 2 shown in FIG. 1( a ) is oxidized by heat in an electric furnace to form a silicon dioxide film 4 on a surface of the silicon substrate 2 as shown in FIG. 1( b ).
  • the thermal oxidation is conducted according to a wet oxidation method using, for example, water vapor.
  • the wet oxidation can be carried out at a temperature of 1080° C. that is fully lower than a melting point which is 1410° C. of the silicon substrate 2 , without requiring the treatment under a high pressure.
  • this step of thermal oxidation there is formed the silicon dioxide film having a thickness of, for example, 2 ⁇ m.
  • a silicon dioxide film 4 is deposited polysilicon, epitaxial silicon or amorphous silicon by a known chemical vapor-phase deposition method (CVD) to form a silicon film 6 .
  • CVD chemical vapor-phase deposition method
  • the chemical vapor-phase deposition method there is used a typical reduced-pressure vapor-phase deposition method. The selection of polysilicon, epitaxial silicon or amorphous silicon and the reduced-pressure vapor-phase deposition method will be described later.
  • this step there is formed a silicon-deposited film having a thickness of, for example, 1 ⁇ m. It is desired that the thickness of the film is not larger than 5 ⁇ m so that a large rate of oxidation can be obtained in the next step of thermal oxidation.
  • the silicon film 6 is oxidized by heat in the electric furnace to form, as shown in FIG. 1( d ), a silicon dioxide film 8 of the same quality on the first silicon dioxide film 4 .
  • the above silicon film 6 of the thickness of 1 ⁇ m turns into the silicon dioxide film 8 of a thickness of 3 ⁇ m due to the expansion of volume by the thermal oxidation.
  • the above step of deposition and the step of thermal oxidation are repeated until there is formed a silicon dioxide film having a predetermined thickness T of 15 ⁇ m.
  • the final film of the thickness of 1 ⁇ m is formed by thermally oxidizing the silicon film having a thickness of 0.3 ⁇ m.
  • FIG. 2 shows one example of results of experiment conducted by the present inventor.
  • Deposition of epitaxial silicon makes it possible to form a film of monocrystalline silicon by the silicon epitaxial growth in a manner as described below.
  • amorphous silicon makes it possible to form an amorphous film in a manner as described below.
  • the silicon film may be deposited by selecting either epitaxial silicon or amorphous silicon.
  • epitaxial silicon may be selected.
  • Epitaxial silicon deposition can be performed at a reduced pressure to a relatively small degree and an apparatus therefor is relatively simple.
  • amorphous silicon is deposited, there can be formed a film over a relatively large area.
  • the deposition of epitaxial silicon or the deposition of amorphous silicon makes it possible to improve the surface roughness of the silicon dioxide film, which has been a problem in the deposition of polysilicon. Namely, the surface roughness (RMS) is greatly improved to 0.15 nm in the case of epitaxial silicon and 0.4 to 0.7 nm in the case of amorphous silicon as compared with 20.5 nm in the case of polysilicon. Further, the rate of growing the silicon film is greatly improved to 1.06 ⁇ m/min when epitaxial silicon is deposited as compared with 0.0020 ⁇ m/min of when polysilicon is deposited. By epitaxial silicon deposition, therefore, the time for growing the film can be shortened.
  • Any one of polysilicon, epitaxial silicon or amorphous silicon is appropriately selected to be deposited to form a thick silicon dioxide film on the silicon substrate depending upon such requirements as production in large amounts, production in small amounts, facility that can be utilized, requested delivery time, requested surface quality, and sizes of the surfaces to be formed.
  • a thick silicon dioxide film there may be suitably deposited polysilicon, epitaxial silicon or amorphous silicon in a suitable combination as required.
  • a silicon dioxide film having a predetermined thickness can be form by repeating the steps of depositing a silicon layer on a silicon substrate, and then, subjecting the deposited silicon layer to the thermal oxidation treatment to form a silicon dioxide film, and further, the surface roughness of the silicon dioxide film that is formed and the rate of growing the silicon film that is deposited can be appropriately selected.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US10/470,060 2001-12-06 2002-11-25 Method for creating silicon dioxide film Abandoned US20040058080A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/878,717 US7754286B2 (en) 2001-12-06 2007-07-26 Method of forming a silicon dioxide film

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-372474 2001-12-06
JP2001372474A JP4398126B2 (ja) 2001-12-06 2001-12-06 二酸化シリコン膜の生成方法
PCT/JP2002/012272 WO2003048041A1 (fr) 2001-12-06 2002-11-25 Procede permettant de former une couche de dioxyde de silicium

Related Child Applications (1)

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US11/878,717 Continuation US7754286B2 (en) 2001-12-06 2007-07-26 Method of forming a silicon dioxide film

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US20040058080A1 true US20040058080A1 (en) 2004-03-25

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US10/470,060 Abandoned US20040058080A1 (en) 2001-12-06 2002-11-25 Method for creating silicon dioxide film
US11/878,717 Expired - Lifetime US7754286B2 (en) 2001-12-06 2007-07-26 Method of forming a silicon dioxide film

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Country Status (10)

Country Link
US (2) US20040058080A1 (fr)
EP (1) EP1437328B1 (fr)
JP (1) JP4398126B2 (fr)
KR (1) KR100588081B1 (fr)
AU (1) AU2002365849A1 (fr)
CA (1) CA2436001C (fr)
DE (1) DE60217701T2 (fr)
DK (1) DK1437328T3 (fr)
TW (1) TWI282116B (fr)
WO (1) WO2003048041A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050009255A1 (en) * 2003-07-10 2005-01-13 International Rectifier Corp. Process for forming thick oxides on Si or SiC for semiconductor devices
US20100313871A1 (en) * 2008-02-06 2010-12-16 Akihiro Iritani Glass article
US8455289B1 (en) * 2011-12-02 2013-06-04 Texas Instruments Incorporated Low frequency CMUT with thick oxide
CN112331556A (zh) * 2020-11-02 2021-02-05 上海华虹宏力半导体制造有限公司 非晶硅薄膜成膜方法
CN114724928A (zh) * 2022-06-08 2022-07-08 济南晶正电子科技有限公司 一种具有高厚度隔离层的复合衬底及其制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141221A (ja) * 2008-12-15 2010-06-24 Shin-Etsu Chemical Co Ltd 酸化膜付きシリコン基板の製造方法
JP2013048218A (ja) * 2011-07-22 2013-03-07 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
US8734903B2 (en) 2011-09-19 2014-05-27 Pilkington Group Limited Process for forming a silica coating on a glass substrate
CN104008995B (zh) * 2013-02-22 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法
RU2660622C1 (ru) * 2017-09-19 2018-07-06 Акционерное общество "Центральный научно-исследовательский институт "Электрон" Пленка двуокиси кремния на кремнии и способ ее получения
CN113363138A (zh) * 2021-06-01 2021-09-07 上海晶盟硅材料有限公司 外延生长方法和设备

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US4604304A (en) * 1985-07-03 1986-08-05 Rca Corporation Process of producing thick layers of silicon dioxide
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
US4921833A (en) * 1987-05-26 1990-05-01 Sumitomo Electric Industries, Ltd. Superconducting member
US5088003A (en) * 1989-08-24 1992-02-11 Tosoh Corporation Laminated silicon oxide film capacitors and method for their production
US5521126A (en) * 1993-06-25 1996-05-28 Nec Corporation Method of fabricating semiconductor devices
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
US6239044B1 (en) * 1998-06-08 2001-05-29 Sony Corporation Apparatus for forming silicon oxide film and method of forming silicon oxide film
US6468845B1 (en) * 1992-12-25 2002-10-22 Hitachi, Ltd. Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor

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Publication number Priority date Publication date Assignee Title
US3807039A (en) * 1971-04-05 1974-04-30 Rca Corp Method for making a radio frequency transistor structure
US4698316A (en) * 1985-01-23 1987-10-06 Rca Corporation Method of depositing uniformly thick selective epitaxial silicon
US4604304A (en) * 1985-07-03 1986-08-05 Rca Corporation Process of producing thick layers of silicon dioxide
US4921833A (en) * 1987-05-26 1990-05-01 Sumitomo Electric Industries, Ltd. Superconducting member
US5088003A (en) * 1989-08-24 1992-02-11 Tosoh Corporation Laminated silicon oxide film capacitors and method for their production
US6468845B1 (en) * 1992-12-25 2002-10-22 Hitachi, Ltd. Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor
US5521126A (en) * 1993-06-25 1996-05-28 Nec Corporation Method of fabricating semiconductor devices
US6239044B1 (en) * 1998-06-08 2001-05-29 Sony Corporation Apparatus for forming silicon oxide film and method of forming silicon oxide film
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050009255A1 (en) * 2003-07-10 2005-01-13 International Rectifier Corp. Process for forming thick oxides on Si or SiC for semiconductor devices
US7754550B2 (en) 2003-07-10 2010-07-13 International Rectifier Corporation Process for forming thick oxides on Si or SiC for semiconductor devices
US20100313871A1 (en) * 2008-02-06 2010-12-16 Akihiro Iritani Glass article
US8770183B2 (en) * 2008-02-06 2014-07-08 Nippon Electric Glass Co., Ltd. Glass article
US8455289B1 (en) * 2011-12-02 2013-06-04 Texas Instruments Incorporated Low frequency CMUT with thick oxide
CN112331556A (zh) * 2020-11-02 2021-02-05 上海华虹宏力半导体制造有限公司 非晶硅薄膜成膜方法
CN114724928A (zh) * 2022-06-08 2022-07-08 济南晶正电子科技有限公司 一种具有高厚度隔离层的复合衬底及其制备方法

Also Published As

Publication number Publication date
AU2002365849A1 (en) 2003-06-17
US7754286B2 (en) 2010-07-13
TWI282116B (en) 2007-06-01
JP4398126B2 (ja) 2010-01-13
KR100588081B1 (ko) 2006-06-08
JP2003192328A (ja) 2003-07-09
EP1437328A1 (fr) 2004-07-14
DK1437328T3 (da) 2007-03-05
DE60217701D1 (de) 2007-03-08
EP1437328A4 (fr) 2006-04-05
EP1437328B1 (fr) 2007-01-17
US20070266934A1 (en) 2007-11-22
CA2436001C (fr) 2009-10-27
CA2436001A1 (fr) 2003-06-12
DE60217701T2 (de) 2007-10-25
TW200300964A (en) 2003-06-16
WO2003048041A1 (fr) 2003-06-12
KR20040023589A (ko) 2004-03-18

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