TWI734774B - 黏晶切割薄膜、黏晶切割膠帶及半導體裝置之製造方法 - Google Patents

黏晶切割薄膜、黏晶切割膠帶及半導體裝置之製造方法 Download PDF

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Publication number
TWI734774B
TWI734774B TW106113234A TW106113234A TWI734774B TW I734774 B TWI734774 B TW I734774B TW 106113234 A TW106113234 A TW 106113234A TW 106113234 A TW106113234 A TW 106113234A TW I734774 B TWI734774 B TW I734774B
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Taiwan
Prior art keywords
dicing
die
film
layer
bonding
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TW106113234A
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English (en)
Chinese (zh)
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TW201805385A (zh
Inventor
宍戶雄一郎
高本尚英
大西謙司
木村雄大
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日商日東電工股份有限公司
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Publication of TW201805385A publication Critical patent/TW201805385A/zh
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Publication of TWI734774B publication Critical patent/TWI734774B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
TW106113234A 2016-04-22 2017-04-20 黏晶切割薄膜、黏晶切割膠帶及半導體裝置之製造方法 TWI734774B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-086297 2016-04-22
JP2016086297A JP6721398B2 (ja) 2016-04-22 2016-04-22 ダイシングダイボンディングフィルム、ダイシングダイボンディングテープおよび半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201805385A TW201805385A (zh) 2018-02-16
TWI734774B true TWI734774B (zh) 2021-08-01

Family

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Family Applications (1)

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TW106113234A TWI734774B (zh) 2016-04-22 2017-04-20 黏晶切割薄膜、黏晶切割膠帶及半導體裝置之製造方法

Country Status (4)

Country Link
JP (1) JP6721398B2 (ko)
KR (1) KR102342479B1 (ko)
CN (1) CN107331645A (ko)
TW (1) TWI734774B (ko)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103013365A (zh) * 2011-09-23 2013-04-03 古河电气工业株式会社 晶片加工用带
CN103081069A (zh) * 2010-09-06 2013-05-01 日东电工株式会社 半导体装置用薄膜以及半导体装置
TW201326348A (zh) * 2011-11-10 2013-07-01 Asahi Kasei Fibers Corp 黏著膠帶及遮蔽用片材
TW201412930A (zh) * 2007-11-08 2014-04-01 Nitto Denko Corp 切晶黏晶膜
WO2016052444A1 (ja) * 2014-09-29 2016-04-07 リンテック株式会社 半導体ウエハ加工用シート用基材、半導体ウエハ加工用シート、および半導体装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000038556A (ja) * 1998-07-22 2000-02-08 Nitto Denko Corp 半導体ウエハ保持保護用ホットメルトシート及びその貼り付け方法
JP4477346B2 (ja) 2003-12-05 2010-06-09 古河電気工業株式会社 半導体ダイシング用粘接着テープ
JP4993662B2 (ja) * 2005-05-12 2012-08-08 日東電工株式会社 ダイシング用粘着シート、及びそれを用いたダイシング方法
JP2007027474A (ja) * 2005-07-19 2007-02-01 Denki Kagaku Kogyo Kk ウエハフルカット用ダイシングテープの基材フィルム及びそれを有するウエハフルカット用ダイシングテープ
JP2007031535A (ja) * 2005-07-26 2007-02-08 Denki Kagaku Kogyo Kk 粘着シートおよびそれを用いた電子部品の製造方法。
JP5140910B2 (ja) 2005-08-30 2013-02-13 住友ベークライト株式会社 フィルム基材および半導体ウエハ加工用粘着テープ
JP5286085B2 (ja) * 2007-07-19 2013-09-11 積水化学工業株式会社 ダイシング−ダイボンディングテープ及び半導体チップの製造方法
JP4801127B2 (ja) * 2008-09-01 2011-10-26 日東電工株式会社 ダイシング・ダイボンドフィルムの製造方法
JP5618994B2 (ja) * 2009-05-12 2014-11-05 電気化学工業株式会社 粘着剤、粘着シート及び電子部品の製造方法
KR101083959B1 (ko) * 2010-02-01 2011-11-16 닛토덴코 가부시키가이샤 반도체 장치 제조용 필름 및 반도체 장치의 제조 방법
JP2012209363A (ja) 2011-03-29 2012-10-25 Sumitomo Bakelite Co Ltd ダイシングフィルム
JP6542504B2 (ja) * 2013-02-20 2019-07-10 日東電工株式会社 フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置
JP6246989B2 (ja) * 2015-12-08 2017-12-13 リンテック株式会社 ダイシングシートおよびダイシングシートの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201412930A (zh) * 2007-11-08 2014-04-01 Nitto Denko Corp 切晶黏晶膜
CN103081069A (zh) * 2010-09-06 2013-05-01 日东电工株式会社 半导体装置用薄膜以及半导体装置
CN103013365A (zh) * 2011-09-23 2013-04-03 古河电气工业株式会社 晶片加工用带
TW201326348A (zh) * 2011-11-10 2013-07-01 Asahi Kasei Fibers Corp 黏著膠帶及遮蔽用片材
WO2016052444A1 (ja) * 2014-09-29 2016-04-07 リンテック株式会社 半導体ウエハ加工用シート用基材、半導体ウエハ加工用シート、および半導体装置の製造方法

Also Published As

Publication number Publication date
KR20170121065A (ko) 2017-11-01
JP2017195336A (ja) 2017-10-26
JP6721398B2 (ja) 2020-07-15
KR102342479B1 (ko) 2021-12-24
TW201805385A (zh) 2018-02-16
CN107331645A (zh) 2017-11-07

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