TWI734774B - Die bonding dicing film, die bonding dicing tape and manufacturing method of semiconductor device - Google Patents

Die bonding dicing film, die bonding dicing tape and manufacturing method of semiconductor device Download PDF

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TWI734774B
TWI734774B TW106113234A TW106113234A TWI734774B TW I734774 B TWI734774 B TW I734774B TW 106113234 A TW106113234 A TW 106113234A TW 106113234 A TW106113234 A TW 106113234A TW I734774 B TWI734774 B TW I734774B
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dicing
die
film
layer
bonding
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TW201805385A (en
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宍戶雄一郎
高本尚英
大西謙司
木村雄大
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日商日東電工股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

本發明一個實施態樣的目的在於，提供能夠用切割的冷卻液將纖維狀屑洗掉的黏晶切割(dicing die bonding)薄膜。本發明一個實施態樣涉及黏晶切割薄膜。黏晶切割薄膜包含切割支撐層及黏晶層。切割支撐層的熔點為60℃~100℃。切割支撐層在室溫下的拉伸模量為30N/mm2~100N/mm2。 An object of one embodiment of the present invention is to provide a dicing die bonding film capable of washing away fibrous debris with cutting coolant. One embodiment of the present invention relates to a die-bonding dicing film. The die-bonding dicing film includes a dicing support layer and a die-bonding layer. The melting point of the cutting support layer is 60℃~100℃. The tensile modulus of the cutting support layer at room temperature is 30N/mm 2 ~100N/mm 2 .

Description

黏晶切割薄膜、黏晶切割膠帶及半導體裝置之製造方法 Die-bonded dicing film, die-bonded dicing tape and manufacturing method of semiconductor device

本發明涉及黏晶切割薄膜、黏晶切割膠帶及半導體裝置之製造方法。 The invention relates to a manufacturing method of a die-bonding dicing film, a die-bonding dicing tape and a semiconductor device.

背景技術 Background technique

有具備基材層、位於基材層上的黏合劑層以及位於黏合劑層上的黏接劑層的、切割用且黏晶用的薄膜。也有具備基材層及位於基材層上的黏接劑層的、切割用且黏晶用的薄膜。 There are films for cutting and die bonding that have a substrate layer, an adhesive layer on the substrate layer, and an adhesive layer on the adhesive layer. There are also films for dicing and die bonding that have a substrate layer and an adhesive layer on the substrate layer.

若用切割刃切入此等薄膜的基材層，則會產生纖維狀屑。 If a cutting blade is used to cut into the substrate layer of these films, fibrous chips will be generated.

先行技術文獻 Advanced technical literature

專利文獻 Patent literature

專利文獻1：日本特開2005-174963號公報 Patent Document 1: Japanese Patent Application Publication No. 2005-174963

專利文獻2：日本特開2012-209363號公報 Patent Document 2: JP 2012-209363 A

專利文獻3：日本特開2007-63340號公報 Patent Document 3: Japanese Patent Application Publication No. 2007-63340

發明概要 Summary of the invention

本發明一個實施態樣的目的在於，提供能夠用切割的冷卻液將纖維狀屑洗掉的黏晶切割(dicing die bonding)薄膜及黏晶切割(dicing die bonding)膠帶。本發明一個實施態樣的目的在於，提供一種半導體裝置之製造方法。 An object of one embodiment of the present invention is to provide a dicing die bonding film and a dicing die bonding tape capable of washing off fibrous debris with cutting coolant. An object of one embodiment of the present invention is to provide a method of manufacturing a semiconductor device.

本發明一個實施態樣涉及一種黏晶切割薄膜。黏晶切割薄膜包含切割支撐層及黏晶層。切割支撐層的熔點為60℃~100℃。由於熔點為100℃以下，因此能夠用冷卻液將纖維狀屑洗掉。由於切割支撐層與切割刃的摩擦，能使切割支撐層熔化，能夠使纖維狀屑從切割支撐層脫離。切割支撐層在室溫下的拉伸模量為30N/mm2~100N/mm2。由於拉伸模量為100N/mm2以下，因此有不易發生黏晶切割薄膜自切割環的剝離、切割支撐層的破裂的傾向。 One embodiment of the present invention relates to a die-bonding dicing film. The die-bonding dicing film includes a dicing support layer and a die-bonding layer. The melting point of the cutting support layer is 60℃~100℃. Since the melting point is below 100°C, the fibrous debris can be washed away with coolant. Due to the friction between the cutting support layer and the cutting edge, the cutting support layer can be melted, and the fibrous debris can be separated from the cutting support layer. The tensile modulus of the cutting support layer at room temperature is 30N/mm 2 ~100N/mm 2 . Since the tensile modulus is 100 N/mm 2 or less, it tends to be less likely to cause peeling of the die-bonded dicing film from the dicing ring and cracking of the dicing support layer.

本發明一個實施態樣涉及一種黏晶切割膠帶。黏晶切割膠帶包含隔膜及與隔膜接觸的黏晶切割薄膜。 One embodiment of the present invention relates to a die-bonding dicing tape. The die-bonding dicing tape includes a diaphragm and a die-bonding dicing film in contact with the diaphragm.

本發明一個實施態樣涉及一種半導體裝置之製造方法。半導體裝置之製造方法包括對固定於黏晶切割薄膜之半導體晶圓進行切割的步驟，及將藉由對半導體晶圓進行切割步驟所形成之黏晶前的晶片壓接在被黏物上的步驟。 An embodiment of the present invention relates to a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes a step of dicing a semiconductor wafer fixed on a die-bonding dicing film, and a step of crimping the die before die-bonding formed by the step of dicing the semiconductor wafer on the adherend .

1:黏晶切割膠帶 1: Adhesive wafer cutting tape

2:層疊體 2: Stacked body

4:半導體晶圓 4: Semiconductor wafer

5:晶片 5: chip

6:被黏物 6: Stickies

11:隔膜 11: Diaphragm

12、12a、12b、12c、......、12m:黏晶切割薄膜 12, 12a, 12b, 12c,..., 12m: Die-bonded cutting film

12A:晶圓固定部 12A: Wafer fixing part

12B:切割環固定部 12B: Cutting ring fixing part

41:半導體晶片 41: Semiconductor wafer

91:切割環 91: cutting ring

92:加熱台 92: heating table

93:輥 93: Roll

121、1211、1212:黏晶層 121, 1211, 1212: sticky layer

122:切割支撐層 122: Cutting support layer

123、124:切割環固定黏合劑部 123, 124: Cutting ring fixing adhesive part

1221:基材層 1221: substrate layer

1222:黏合劑層 1222: Adhesive layer

圖1為黏晶切割膠帶的俯視示意圖。 Figure 1 is a schematic top view of a die-bonding dicing tape.

圖2為黏晶切割膠帶的部分截面示意圖。 Figure 2 is a schematic partial cross-sectional view of the die-bonding dicing tape.

圖3為半導體裝置的製造步驟的截面示意圖。 Fig. 3 is a schematic cross-sectional view of a manufacturing step of a semiconductor device.

圖4為半導體裝置的製造步驟的截面示意圖。 FIG. 4 is a schematic cross-sectional view of the manufacturing steps of the semiconductor device.

圖5為半導體裝置的製造步驟的截面示意圖。 Fig. 5 is a schematic cross-sectional view of a manufacturing step of a semiconductor device.

圖6為半導體裝置的製造步驟的截面示意圖。 Fig. 6 is a schematic cross-sectional view of a manufacturing step of a semiconductor device.

圖7為半導體裝置的製造步驟的截面示意圖。 FIG. 7 is a schematic cross-sectional view of a manufacturing step of a semiconductor device.

圖8為變形例1中之黏晶切割膠帶的部分截面示意圖。 FIG. 8 is a schematic partial cross-sectional view of the die bonding dicing tape in Modification 1. FIG.

圖9為變形例2中之黏晶切割膠帶的部分截面示意圖。 9 is a schematic partial cross-sectional view of the die-bonding dicing tape in Modification 2.

圖10為變形例3中之黏晶切割膠帶的部分截面示意圖。 10 is a schematic partial cross-sectional view of the die-bonding dicing tape in Modification 3. FIG.

圖11為變形例4中之黏晶切割膠帶的部分截面示意圖。 11 is a schematic partial cross-sectional view of the die bonding dicing tape in Modification 4. FIG.

用以實施發明之形態 The form used to implement the invention

以下舉出實施形態詳細地對本發明進行說明，但本發明不僅限定於此等實施形態。 Hereinafter, the present invention will be described in detail with reference to embodiments, but the present invention is not limited to these embodiments.

實施形態1 Embodiment 1

如圖1所示，黏晶切割膠帶1包含隔膜11及黏晶切割薄膜12a、12b、12c、......、12m(以下，總稱為“黏晶切割薄膜12”。)。黏晶切割膠帶1可以呈卷狀。隔膜11呈帶狀。隔膜11為例如進行了剝離處理的聚對苯二甲酸乙二醇酯(PET)薄膜等。黏晶切割薄膜12位於隔膜11上。黏晶切割薄膜12a與黏晶切割薄膜12b間的距離、黏晶切割薄膜12b與黏晶切割薄膜12c間的距離、......黏晶切割薄膜12l與黏晶切割薄膜12m間的距離是恒定的。黏晶切割薄膜12呈圓盤狀。 As shown in FIG. 1, the die-bonding dicing tape 1 includes a separator 11 and die-bonding dicing films 12a, 12b, 12c, ..., 12m (hereinafter, collectively referred to as "die-bonding dicing film 12"). The die-bonding dicing tape 1 may be in a roll shape. The diaphragm 11 has a band shape. The separator 11 is, for example, a polyethylene terephthalate (PET) film that has been peeled off. The die bonding dicing film 12 is located on the diaphragm 11. The distance between the die bonding dicing film 12a and the die bonding dicing film 12b, the distance between the die bonding dicing film 12b and the die bonding dicing film 12c, the distance between the die bonding dicing film 12l and the die bonding dicing film 12m Is constant. The die-bonding cutting film 12 has a disc shape.

如圖2所示，黏晶切割薄膜12可以包含晶 圓固定部12A及切割環固定部12B。切割環固定部12B位於晶圓固定部12A的周邊。 As shown in FIG. 2, the die-bonding dicing film 12 may include a die The circular fixing portion 12A and the cutting ring fixing portion 12B. The dicing ring fixing portion 12B is located on the periphery of the wafer fixing portion 12A.

黏晶切割薄膜12包含切割支撐層122。切割支撐層122呈圓盤狀。切割支撐層122的厚度例如為50μm~150μm。切割支撐層122的兩面是用與黏晶層121接觸的第1主面及與第1主面相對的第2主面來定義的。切割支撑層122的第1主面可以塗佈有底涂劑。 The die-bonding dicing film 12 includes a dicing support layer 122. The cutting support layer 122 has a disc shape. The thickness of the dicing support layer 122 is, for example, 50 μm to 150 μm. The two surfaces of the dicing support layer 122 are defined by a first main surface contacting the die bond layer 121 and a second main surface opposite to the first main surface. The first main surface of the dicing support layer 122 may be coated with a primer.

切割支撐層122的熔點為100℃以下，較佳為95℃以下。由於熔點為100℃以下，因此能夠用冷卻液將因切割而產生的纖維狀屑洗掉。由於切割支撐層122與切割刃的摩擦能使切割支撐層122熔化，能夠使纖維狀屑從切割支撐層122脫離。切割支撐層122的熔點的下限例如為60℃、70℃、80℃。切割支撐層122的熔點可以藉由下面敘述的方法來測定。從切割支撐層122切出10mmg的試樣，使用差示掃描量熱計(SII NanoTechnology Inc.製的DSC6220)，以試樣10mmg、升溫速度5℃/分鐘、30℃~200℃的條件進行差示掃描量熱測定(differential scanning calorimetry：DSC)，讀取DSC曲線中的熔解的峰值溫度。存在多個峰時，讀取最初出現的熔解峰的峰值溫度。 The melting point of the dicing support layer 122 is 100°C or less, preferably 95°C or less. Since the melting point is below 100°C, the fibrous chips produced by cutting can be washed away with coolant. Due to the friction between the cutting support layer 122 and the cutting edge, the cutting support layer 122 can be melted, and the fibrous debris can be separated from the cutting support layer 122. The lower limit of the melting point of the dicing support layer 122 is, for example, 60°C, 70°C, and 80°C. The melting point of the dicing support layer 122 can be measured by the method described below. A 10mmg sample was cut out from the cutting support layer 122, and a differential scanning calorimeter (DSC6220 manufactured by SII NanoTechnology Inc.) was used to make the difference under the conditions of 10mmg sample, 5°C/min, 30°C to 200°C. Scanning calorimetry (differential scanning calorimetry: DSC) is used to read the melting peak temperature in the DSC curve. When there are multiple peaks, read the peak temperature of the melting peak that appears first.

切割支撐層122在室溫下的拉伸模量為100N/mm2以下，較佳為90N/mm2以下、更佳為80N/mm2以下。由於拉伸模量為100N/mm2以下，因此有不易產生黏晶切割薄膜12自切割環的剝離、切割支撐層122的破裂的傾向。切割支撐層122在室溫下的拉伸模量的下限例如 為30N/mm2。切割支撐層122的拉伸模量可以藉由實施例中記載的方法來測定。 Tensile modulus at room temperature, the support layer 122 is cut 100N / mm 2 or less, preferably 90N / mm 2 or less, more preferably 80N / mm 2 or less. Since the tensile modulus is 100 N/mm 2 or less, peeling of the die-bonding dicing film 12 from the dicing ring and cracking of the dicing support layer 122 are unlikely to occur. The lower limit of the tensile modulus of the cutting support layer 122 at room temperature is, for example, 30 N/mm 2 . The tensile modulus of the cutting support layer 122 can be measured by the method described in the examples.

切割支撐層122例如為塑膠薄膜，較佳為乙烯-乙酸乙烯酯共聚物(以下，稱為“EVA”)薄膜。通常EVA薄膜的熔點比聚對苯二甲酸乙二醇酯薄膜、聚乙烯薄膜等的熔點低。即，切割支撑層122較佳包含EVA。 The dicing support layer 122 is, for example, a plastic film, preferably an ethylene-vinyl acetate copolymer (hereinafter referred to as "EVA") film. Generally, the melting point of EVA film is lower than that of polyethylene terephthalate film, polyethylene film, etc. That is, the cutting support layer 122 preferably includes EVA.

黏晶切割薄膜12包含黏晶層121。黏晶層121位於隔膜11與切割支撐層122之間。黏晶層121呈圓盤狀。黏晶層121的厚度例如為2μm以上，較佳為10μm以上。黏晶層121的厚度例如為200μm以下，較佳為150μm以下、更佳為100μm以下。黏晶層121的兩面是用第1主面及與第1主面相對的第2主面來定義的。黏晶層121的第1主面與隔膜11接觸。黏晶層121的第2主面與切割支撐層122接觸。 The die bonding dicing film 12 includes a die bonding layer 121. The die bonding layer 121 is located between the diaphragm 11 and the cutting support layer 122. The crystal bonding layer 121 has a disc shape. The thickness of the die bond layer 121 is, for example, 2 μm or more, preferably 10 μm or more. The thickness of the die bond layer 121 is, for example, 200 μm or less, preferably 150 μm or less, and more preferably 100 μm or less. Both surfaces of the die-bonding layer 121 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the die-bonding layer 121 is in contact with the diaphragm 11. The second main surface of the die bonding layer 121 is in contact with the dicing support layer 122.

黏晶層121包含樹脂成分。作為樹脂成分，可列舉出：熱塑性樹脂、熱固性樹脂等。作為熱塑性樹脂，例如可列舉出丙烯酸類樹脂。 The die bonding layer 121 contains a resin component. Examples of resin components include thermoplastic resins, thermosetting resins, and the like. As a thermoplastic resin, acrylic resin is mentioned, for example.

作為丙烯酸類樹脂，沒有特別限定，可列舉出：以具有碳數30以下、特別是碳數4~18的直鏈或支鏈的烷基的丙烯酸或甲基丙烯酸的酯的1種或2種以上作為成分的聚合物(丙烯酸類共聚物)等。作為前述烷基，例如可列舉出：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、 十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或十二烷基等。 The acrylic resin is not particularly limited, and examples thereof include one or two esters of acrylic acid or methacrylic acid having a carbon number of 30 or less, particularly a linear or branched alkyl group having a carbon number of 4 to 18 The above-mentioned polymer (acrylic copolymer) and the like are the components. Examples of the aforementioned alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, tertiary butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, and cyclohexyl. , 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, Undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl, or dodecyl, etc.

另外，作為形成聚合物(丙烯酸類共聚物)的其它單體，沒有特別限定，例如可列舉出：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等之類的含羧基單體、馬來酸酐或衣康酸酐等之類的酸酐單體、(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯、(甲基)丙烯酸-6-羥基己酯、(甲基)丙烯酸-8-羥基辛酯、(甲基)丙烯酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂酯或丙烯酸(4-羥基甲基環己酯)-甲酯等之類的含羥基單體、苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙烷磺酸、(甲基)丙烯醯胺丙烷磺酸、基(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等之類的含磺酸基單體、或2-羥基乙基丙烯醯基磷酸酯等之類的含磷酸基單體。 In addition, other monomers forming the polymer (acrylic copolymer) are not particularly limited, and examples include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, Carboxyl-containing monomers such as fumaric acid or crotonic acid, acid anhydride monomers such as maleic anhydride or itaconic anhydride, (meth)acrylic acid-2-hydroxyethyl, (meth)acrylic acid-2- Hydroxypropyl ester, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate Ester, (meth)acrylic acid-12-hydroxylauryl ester or acrylic acid (4-hydroxymethylcyclohexyl)-methyl ester and other hydroxyl-containing monomers, styrene sulfonic acid, allyl sulfonic acid, 2- One of (meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide propanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloxynaphthalenesulfonic acid, etc. Sulfonic acid group-containing monomers, or phosphoric acid group-containing monomers such as 2-hydroxyethyl acryloyl phosphate.

丙烯酸類樹脂中，重均分子量較佳10萬以上、更佳30萬~300萬、進一步更佳50萬~200萬。此是因為若為所述數值範圍內，則黏接性及耐熱性優異。需要說明的是，重均分子量為藉由GPC(凝膠滲透色譜法)進行測定並藉由聚苯乙烯換算算出的值。 Among the acrylic resins, the weight average molecular weight is preferably 100,000 or more, more preferably 300,000 to 3 million, and still more preferably 500,000 to 2 million. This is because if it is within the above numerical range, adhesiveness and heat resistance are excellent. In addition, the weight average molecular weight is a value measured by GPC (gel permeation chromatography) and calculated by polystyrene conversion.

丙烯酸類樹脂較佳包含官能團。官能團例如為羥基、羧基、腈基等。以羥基、羧基為佳。 The acrylic resin preferably contains a functional group. The functional group is, for example, a hydroxyl group, a carboxyl group, a nitrile group, and the like. Hydroxy and carboxyl groups are preferred.

樹脂成分100重量%中的熱塑性樹脂的含量較佳為10重量%以上、更佳為20重量%以上。若為10重 量%以上，則撓性良好。樹脂成分100重量%中的熱塑性樹脂的含量較佳為80重量%以下、更佳為70重量%以下。 The content of the thermoplastic resin in 100% by weight of the resin component is preferably 10% by weight or more, more preferably 20% by weight or more. If it is 10 If the amount is more than %, the flexibility is good. The content of the thermoplastic resin in 100% by weight of the resin component is preferably 80% by weight or less, more preferably 70% by weight or less.

作為熱固性樹脂，可列舉出：環氧樹脂、酚醛樹脂等。 Examples of thermosetting resins include epoxy resins and phenol resins.

作為環氧樹脂，不特別限定，例如可以使用雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、芴型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四苯基羥基(tetraphenylol)乙烷型等二官能環氧樹脂、多官能環氧樹脂、或乙內醯脲型、三縮水甘油基異氰脲酸酯型或縮水甘油胺型等環氧樹脂。此等環氧樹脂中特佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四苯基羥基乙烷型環氧樹脂。此是因為此等環氧樹脂富於與作為固化劑的酚醛樹脂的反應性，耐熱性等優異。 The epoxy resin is not particularly limited. For example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol A type, bisphenol AF type, biphenyl type, naphthalene can be used. Type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetraphenylol ethane type and other difunctional epoxy resins, multifunctional epoxy resins, or intra-ethyl Epoxy resins such as urea type, triglycidyl isocyanurate type, or glycidylamine type. Particularly preferred among these epoxy resins are novolac type epoxy resins, biphenyl type epoxy resins, trihydroxyphenylmethane type resins or tetraphenylhydroxyethane type epoxy resins. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent, and are excellent in heat resistance and the like.

環氧樹脂的環氧當量較佳為100g/eq.以上、更佳為120g/eq.以上。環氧樹脂的環氧當量較佳為1000g/eq.以下、更佳為500g/eq.以下。 The epoxy equivalent of the epoxy resin is preferably 100 g/eq. or more, more preferably 120 g/eq. or more. The epoxy equivalent of the epoxy resin is preferably 1000 g/eq. or less, more preferably 500 g/eq. or less.

需要說明的是，環氧樹脂的環氧當量可以藉由JIS K 7236-2009中規定的方法來測定。 It should be noted that the epoxy equivalent of epoxy resin can be measured by the method specified in JIS K 7236-2009.

酚醛樹脂作為環氧樹脂的固化劑而起作用，例如可列舉出：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚醛樹脂、甲階型酚醛樹脂、聚對氧苯乙烯等聚氧苯乙烯等。此等酚醛樹脂中特佳 為苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。此是因為能夠提高半導體裝置的連接可靠性。 Phenolic resin functions as a curing agent for epoxy resin, and examples thereof include: phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tertiary butyl phenol novolak resin, and nonylphenol novolak resin Novolac type phenol resin, resol type phenol resin, polyoxystyrene such as polyparaoxystyrene, etc. Best among these phenolic resins It is phenol novolac resin and phenol aralkyl resin. This is because the connection reliability of the semiconductor device can be improved.

酚醛樹脂的羥基當量較佳為150g/eq.以上、更佳為200g/eq.以上。酚醛樹脂的羥基當量較佳為500g/eq.以下、更佳為300g/eq.以下。 The hydroxyl equivalent of the phenol resin is preferably 150 g/eq. or more, more preferably 200 g/eq. or more. The hydroxyl equivalent of the phenol resin is preferably 500 g/eq. or less, more preferably 300 g/eq. or less.

對於環氧樹脂與酚醛樹脂的配混比例，例如以相對於環氧樹脂成分中的環氧基每1當量，酚醛樹脂中的羥基成為0.5~2.0當量的方式進行配混是適當的。更適當的是0.8~1.2當量。即，此是因為若兩者的配混比例脫離所述範圍，則不會進行充分的固化反應，固化物的特性變得容易劣化。 Regarding the blending ratio of the epoxy resin and the phenol resin, for example, it is appropriate to blend so that the hydroxyl group in the phenol resin becomes 0.5 to 2.0 equivalents per 1 equivalent of the epoxy groups in the epoxy resin component. More appropriate is 0.8~1.2 equivalent. That is, this is because if the compounding ratio of both is out of the above-mentioned range, a sufficient curing reaction will not proceed, and the properties of the cured product will tend to be degraded.

樹脂成分100重量%中的環氧樹脂及酚醛樹脂的總含量較佳為20重量%以上、更佳為30重量%以上。環氧樹脂及酚醛樹脂的總含量較佳為90重量%以下、更佳為80重量%以下。 The total content of the epoxy resin and the phenol resin in 100% by weight of the resin component is preferably 20% by weight or more, more preferably 30% by weight or more. The total content of the epoxy resin and the phenol resin is preferably 90% by weight or less, more preferably 80% by weight or less.

黏晶層121可以包含無機填充劑。作為無機填充劑，例如可列舉出：二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽、鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊料、碳等。其中，為二氧化矽、氧化鋁、銀等，更佳為二氧化矽。無機填充劑的平均粒徑較佳為0.001μm~1μm。填料的平均粒徑可以藉由以下的方法來測定。將黏晶層121放入坩堝中，在大氣氣氛下、700℃下灼燒2小時使其灰化，使得到的灰分分散於純水中並進行10分鐘超聲處理，使用雷射繞射散 射式粒度分佈測定裝置(Beckman Coulter,Inc.製、“LS13320”；濕法)求出平均粒徑。 The die bonding layer 121 may include an inorganic filler. Examples of inorganic fillers include: silicon dioxide, clay, gypsum, calcium carbonate, barium sulfate, aluminum oxide, beryllium oxide, silicon carbide, silicon nitride, aluminum, copper, silver, gold, nickel, chromium, and lead , Tin, zinc, palladium, solder, carbon, etc. Among them, silicon dioxide, aluminum oxide, silver, etc. are preferred, and silicon dioxide is more preferred. The average particle diameter of the inorganic filler is preferably 0.001 μm to 1 μm. The average particle size of the filler can be measured by the following method. Put the sticky crystal layer 121 into a crucible and burn it in the atmosphere at 700°C for 2 hours to make it ashed, so that the ash obtained is dispersed in pure water and subjected to ultrasonic treatment for 10 minutes, using laser diffraction A jet particle size distribution measuring device (manufactured by Beckman Coulter, Inc., "LS13320"; wet method) was used to determine the average particle size.

黏晶層121中的無機填充劑的含量較佳為10重量%以上、更佳為20重量%以上、進一步更佳為30重量%以上。黏晶層121中的無機填充劑的含量較佳為70重量%以下、更佳為60重量%以下、進一步更佳為50重量%以下。 The content of the inorganic filler in the crystal bonding layer 121 is preferably 10% by weight or more, more preferably 20% by weight or more, and still more preferably 30% by weight or more. The content of the inorganic filler in the crystal bonding layer 121 is preferably 70% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.

黏晶層121除了含有前述成分以外，還可以適宜含有薄膜製造中通常使用的配混劑例如矽烷偶聯劑、固化促進劑、交聯劑等。 In addition to the aforementioned components, the die-bonding layer 121 may suitably contain compounding agents commonly used in film production, such as silane coupling agents, curing accelerators, and crosslinking agents.

黏晶切割膠帶1可以用於製造半導體裝置。 The die-bonding dicing tape 1 can be used to manufacture semiconductor devices.

如圖3所示，從黏晶切割膠帶1去除隔膜11，用輥93將切割環91及經加熱台92加熱的半導體晶圓4固定於黏晶切割薄膜12。在例如40℃以上、較佳45℃以上、更佳50℃以上、進一步更佳55℃以上的條件下固定半導體晶圓4。在例如80℃以下、較佳70℃以下的條件下固定半導體晶圓4。壓力例如為1×105Pa~1×107Pa。輥速度例如為10mm/秒。作為半導體晶圓4，可列舉出：矽晶圓、碳化矽晶圓、化合物半導體晶圓等。作為化合物半導體晶圓，可列舉出氮化鎵晶圓等。 As shown in FIG. 3, the diaphragm 11 is removed from the die-bonding dicing tape 1, and the dicing ring 91 and the semiconductor wafer 4 heated by the heating stage 92 are fixed to the die-bonding dicing film 12 with a roller 93. The semiconductor wafer 4 is fixed under conditions of, for example, 40°C or higher, preferably 45°C or higher, more preferably 50°C or higher, and still more preferably 55°C or higher. The semiconductor wafer 4 is fixed under conditions of, for example, 80° C. or lower, preferably 70° C. or lower. The pressure is, for example, 1×10 5 Pa to 1×10 7 Pa. The roller speed is, for example, 10 mm/sec. Examples of the semiconductor wafer 4 include silicon wafers, silicon carbide wafers, compound semiconductor wafers, and the like. Examples of compound semiconductor wafers include gallium nitride wafers and the like.

如圖4所示，層疊體2包含黏晶切割薄膜12、固定於晶圓固定部12A的半導體晶圓4、以及固定於切割環固定部12B的切割環91。 As shown in FIG. 4, the laminated body 2 includes the die-bonding dicing film 12, the semiconductor wafer 4 fixed to the wafer fixing part 12A, and the dicing ring 91 fixed to the dicing ring fixing part 12B.

如圖5所示，邊向半導體晶圓4噴送冷卻液邊用切割刃切斷半導體晶圓4。切割刃達到基材層122。黏晶前的晶片5包含半導體晶片41及位於半導體晶片41上的切割後黏晶層121。半導體晶片41具有電極墊。 As shown in FIG. 5, the semiconductor wafer 4 is cut with a dicing blade while spraying the coolant on the semiconductor wafer 4. The cutting edge reaches the base layer 122. The wafer 5 before die bonding includes a semiconductor wafer 41 and a die bonding layer 121 on the semiconductor wafer 41 after dicing. The semiconductor wafer 41 has electrode pads.

用針頂起黏晶前的晶片5，拾取黏晶前的晶片5。 A needle is used to push up the wafer 5 before die bonding, and pick up the wafer 5 before die bonding.

如圖6所示，將黏晶前的晶片5壓接在被黏物6上。以例如80℃以上、較佳90℃以上進行壓接。以例如150℃以下、較佳130℃以下進行壓接。被黏物6例如為引線框、中介層、TAB薄膜、半導體晶片等。被黏物6具有端子部。 As shown in FIG. 6, the wafer 5 before die bonding is crimped on the adherend 6. For example, pressure bonding is performed at 80°C or higher, preferably 90°C or higher. The crimping is performed at, for example, 150°C or lower, preferably 130°C or lower. The adherend 6 is, for example, a lead frame, an interposer, a TAB film, a semiconductor chip, or the like. The adherend 6 has a terminal part.

在加壓氣氛下對帶半導體晶片41的且帶切割後的黏晶層121的被黏物6進行加熱，由此使切割後的黏晶層121固化。加壓氣氛例如為0.5kg/cm2(4.9×10-2MPa)以上、較佳為1kg/cm2(9.8×10-2MPa)以上、更佳為5kg/cm2(4.9×10-1MPa)以上。以例如120℃以上、較佳150℃以上、更佳170℃以上進行加熱。上限例如為260℃、200℃、180℃等。 The adherend 6 with the semiconductor wafer 41 and the die bond layer 121 after the dicing is heated in a pressurized atmosphere, thereby curing the die bond layer 121 after the dicing. The pressurized atmosphere is, for example, 0.5 kg/cm 2 (4.9×10 -2 MPa) or more, preferably 1 kg/cm 2 (9.8×10 -2 MPa) or more, more preferably 5 kg/cm 2 (4.9×10 -1 MPa) above. For example, heating is performed at 120°C or higher, preferably 150°C or higher, and more preferably 170°C or higher. The upper limit is, for example, 260°C, 200°C, 180°C, or the like.

如圖7所示，以焊接線7將半導體晶片41的電極墊及被黏物6的端子部電連接，用封裝樹脂8封裝半導體晶片41。 As shown in FIG. 7, the electrode pads of the semiconductor wafer 41 and the terminal portion of the adherend 6 are electrically connected by bonding wires 7, and the semiconductor wafer 41 is sealed with a sealing resin 8.

藉由以上的方法得到的半導體裝置包含半導體晶片41、被黏物6及切割後的黏晶層121。切割後的黏晶層121連接著半導體晶片41及被黏物6。半導體裝置 還包含覆蓋半導體晶片41的封裝樹脂8。 The semiconductor device obtained by the above method includes a semiconductor wafer 41, an adherend 6 and a die bond layer 121 after dicing. The die bonding layer 121 after dicing is connected to the semiconductor wafer 41 and the adherend 6. Semiconductor device The encapsulating resin 8 covering the semiconductor wafer 41 is also included.

如上所述，半導體裝置的製造方法可以包括從黏晶切割膠帶1去除隔膜11的步驟。製造方法可以包括將切割環91及半導體晶圓4固定於黏晶切割薄膜12的步驟。製造方法可以包括對固定於黏晶切割薄膜12的半導體晶圓4進行切割的步驟。製造方法可以包括將藉由對半導體晶圓4進行切割的步驟而形成的黏晶前的晶片5壓接在被黏物6上的步驟。 As described above, the manufacturing method of the semiconductor device may include the step of removing the separator 11 from the die-bonding dicing tape 1. The manufacturing method may include a step of fixing the dicing ring 91 and the semiconductor wafer 4 to the die-bonding dicing film 12. The manufacturing method may include a step of dicing the semiconductor wafer 4 fixed to the die-bonding dicing film 12. The manufacturing method may include a step of crimping the pre-bonding wafer 5 formed by the step of dicing the semiconductor wafer 4 on the adherend 6.

變形例1 Modification 1

如圖8所示，黏晶層121包含第1層1211及第2層1212。第1層1211呈圓盤狀。第1層1211的兩面是用第1主面及與第1主面相對的第2主面定義的。第1層1211的第1主面與隔膜11接觸。第1層1211的第2主面與第2層1212接觸。第2層1212呈圓盤狀。第2層1212的兩面是用第1主面及與第1主面相對的第2主面來定義的。第2層1212的第1主面與第1層1211接觸。第2層1212的第2主面與基材層122接觸。 As shown in FIG. 8, the die bonding layer 121 includes a first layer 1211 and a second layer 1212. The first layer 1211 has a disc shape. Both surfaces of the first layer 1211 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the first layer 1211 is in contact with the diaphragm 11. The second main surface of the first layer 1211 is in contact with the second layer 1212. The second layer 1212 has a disc shape. Both surfaces of the second layer 1212 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the second layer 1212 is in contact with the first layer 1211. The second main surface of the second layer 1212 is in contact with the base layer 122.

第1層1211較佳具有黏合性。構成第2層1212的黏合劑可以使用1種或組合使用2種以上例如丙烯酸系、橡膠系、乙烯基烷基醚系、有機矽系、聚酯系、聚醯胺系、胺基甲酸酯系、苯乙烯-二烯嵌段共聚物系等公知的黏合劑。以丙烯酸系黏合劑為佳。第2層1212的組成/物性可以與第1層1211的組成/物性不同。第2層1212的組成/物性的適宜的例子適用實施例1的黏晶層121的例子。 The first layer 1211 preferably has adhesiveness. The adhesive constituting the second layer 1212 can be used singly or in combination of two or more, such as acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, urethane Well-known adhesives such as styrene-based and styrene-diene block copolymer systems. Acrylic adhesive is preferred. The composition/physical properties of the second layer 1212 may be different from the composition/physical properties of the first layer 1211. The suitable example of the composition/physical properties of the second layer 1212 is the example of the die-bonding layer 121 of the first embodiment.

變形例2 Modification 2

如圖9所示，黏晶切割薄膜12包含切割環固定黏合劑部123。切割環固定黏合劑部123位於黏晶層121的周邊。切割環固定黏合劑部123不與黏晶層121接觸。切割環固定黏合劑部123呈例如環板狀。切割環固定黏合劑部123的兩面是用第1主面及與第1主面相對的第2主面來定義的。切割環固定黏合劑部123的第1主面與隔膜11接觸。切割環固定黏合劑部123的第2主面與切割支撐層122接觸。 As shown in FIG. 9, the die-bonding dicing film 12 includes a dicing ring fixing adhesive part 123. The dicing ring fixing adhesive part 123 is located at the periphery of the die bonding layer 121. The dicing ring fixing adhesive part 123 is not in contact with the die bonding layer 121. The dicing ring fixing adhesive part 123 has a ring plate shape, for example. Both surfaces of the dicing ring fixing adhesive portion 123 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the dicing ring fixing adhesive portion 123 is in contact with the diaphragm 11. The second main surface of the dicing ring fixing adhesive portion 123 is in contact with the dicing support layer 122.

構成切割環固定黏合劑部123的黏合劑可以使用1種或組合使用2種以上例如丙烯酸系、橡膠系、乙烯基烷基醚系、有機矽系、聚酯系、聚醯胺系、胺基甲酸酯系、苯乙烯-二烯嵌段共聚物系等公知的黏合劑。以丙烯酸系黏合劑為佳。 The adhesive that constitutes the dicing ring fixing adhesive part 123 can be used singly or in combination of two or more, such as acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, and amine. Well-known adhesives such as formate-based and styrene-diene block copolymer-based adhesives. Acrylic adhesive is preferred.

變形例3 Modification 3

如圖10所示，黏晶切割薄膜12包含切割環固定黏合劑部124。切割環固定黏合劑部124位於隔膜11與黏晶層121之間。切割環固定黏合劑部124呈例如環狀板狀。切割環固定黏合劑部124的兩面是用第1主面及與第1主面相對的第2主面來定義的。切割環固定黏合劑部124的第1主面與隔膜11接觸。切割環固定黏合劑部124的第2主面與黏晶層121接觸。 As shown in FIG. 10, the die-bonding dicing film 12 includes a dicing ring fixing adhesive part 124. The dicing ring fixing adhesive part 124 is located between the diaphragm 11 and the die bonding layer 121. The dicing ring fixing adhesive portion 124 has, for example, an annular plate shape. Both surfaces of the dicing ring fixing adhesive portion 124 are defined by a first main surface and a second main surface opposite to the first main surface. The first main surface of the dicing ring fixing adhesive portion 124 is in contact with the diaphragm 11. The second main surface of the dicing ring fixing adhesive portion 124 is in contact with the die bonding layer 121.

構成切割環固定黏合劑部124的黏合劑可以使用1種或組合使用2種以上例如丙烯酸系、橡膠系、乙烯基烷基醚系、有機矽系、聚酯系、聚醯胺系、胺 基甲酸酯系、苯乙烯-二烯嵌段共聚物系等公知的黏合劑。以丙烯酸系黏合劑為佳。 The adhesive constituting the dicing ring fixing adhesive portion 124 can be used singly or in combination of two or more, such as acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, amine Well-known adhesives such as carbamate series and styrene-diene block copolymer series. Acrylic adhesive is preferred.

變形例4 Modification 4

如圖11所示，切割支撐層122包含基材層1221及黏合劑層1222。基材層1221呈圓盤狀。基材層1221的兩面是用與黏合劑層1222接觸的第1主面及與第1主面相對的第2主面來定義的。黏合劑層1222呈圓盤狀。黏合劑層1222的兩面是用與黏晶層121接觸的第1主面及與第1主面相對的第2主面來定義的。黏合劑層1222的第2主面與基材層1221接觸。 As shown in FIG. 11, the dicing support layer 122 includes a base layer 1221 and an adhesive layer 1222. The base layer 1221 has a disk shape. Both surfaces of the base layer 1221 are defined by the first main surface in contact with the adhesive layer 1222 and the second main surface opposite to the first main surface. The adhesive layer 1222 has a disc shape. Both surfaces of the adhesive layer 1222 are defined by a first main surface that is in contact with the die-bonding layer 121 and a second main surface opposite to the first main surface. The second main surface of the adhesive layer 1222 is in contact with the base layer 1221.

基材層1221例如為塑膠薄膜，較佳為EVA薄膜。即、基材層1221較佳包含EVA。 The substrate layer 1221 is, for example, a plastic film, preferably an EVA film. That is, the base layer 1221 preferably contains EVA.

構成黏合劑層1222的黏合劑可以使用1種或組合使用2種以上例如丙烯酸系、橡膠系、乙烯基烷基醚系、有機矽系、聚酯系、聚醯胺系、胺基甲酸酯系、苯乙烯-二烯嵌段共聚物系等公知的黏合劑。以丙烯酸系黏合劑為佳。 The adhesive constituting the adhesive layer 1222 can be used singly or in combination of two or more, such as acrylic, rubber, vinyl alkyl ether, silicone, polyester, polyamide, urethane Well-known adhesives such as styrene-based and styrene-diene block copolymer systems. Acrylic adhesive is preferred.

[實施例] [Example]

以下，用實施例詳細地對本發明進行說明，但本發明只要不超出主旨就不限定於以下的實施例。 Hereinafter, the present invention will be described in detail with examples, but the present invention is not limited to the following examples as long as it does not exceed the gist.

黏接劑層的製作 Making the adhesive layer

將丙烯酸類聚合物48重量份(Nagase ChemteX Corporation製的SG-70L)、環氧樹脂6重量份(東都化成株式會社製的KI-3000)、酚醛樹脂6重量份(MEIWAKASEI Co.Ltd.製的MEH7851-SS)、二氧化矽填料40重量份(Admatechs Co.,Ltd.製的SE-2050-MCV(平均一次粒徑0.5μm))溶解於甲乙酮，由此製作固成分20wt%的清漆。將清漆塗佈在隔膜(進行了有機矽處理的PET薄膜)上，在130℃下乾燥2分鐘，得到厚度20μm的黏接劑層。 48 parts by weight of acrylic polymer (SG-70L manufactured by Nagase ChemteX Corporation), 6 parts by weight of epoxy resin (KI-3000 manufactured by Toto Kasei Co., Ltd.), and 6 parts by weight of phenolic resin (MEIWAKASEI) MEH7851-SS manufactured by Co. Ltd., 40 parts by weight of silica filler (SE-2050-MCV manufactured by Admatechs Co., Ltd. (average primary particle size 0.5μm)) were dissolved in methyl ethyl ketone to produce a solid content 20wt% varnish. The varnish was applied on the separator (PET film treated with silicone) and dried at 130°C for 2 minutes to obtain an adhesive layer with a thickness of 20 μm.

黏合劑層的製作 Making the adhesive layer

將丙烯酸類聚合物(Nagase ChemteX Corporation製的SG-708-6)溶解於甲乙酮，由此製作固成分20wt%的清漆。將清漆塗佈在隔膜(進行了有機矽處理的PET薄膜)上，在130℃下乾燥2分鐘，得到厚度30μm的黏合劑層。 An acrylic polymer (SG-708-6 manufactured by Nagase ChemteX Corporation) was dissolved in methyl ethyl ketone to prepare a varnish with a solid content of 20% by weight. The varnish was applied on the separator (PET film treated with silicone) and dried at 130°C for 2 minutes to obtain an adhesive layer with a thickness of 30 μm.

實施例1中之黏晶切割薄膜的製作 Production of the die-bonded cutting film in Example 1

以60℃、10mm/秒在EVA薄膜1(厚度100μm)上層疊黏接劑層，由此得到實施例1的黏晶切割薄膜。實施例1的黏晶切割薄膜具有EVA薄膜1及於位於EVA薄膜1上的黏接劑層。 An adhesive layer was laminated on the EVA film 1 (thickness 100 μm) at 60° C. and 10 mm/sec. Thus, the die-bonded dicing film of Example 1 was obtained. The die bonding dicing film of Example 1 has an EVA film 1 and an adhesive layer on the EVA film 1.

實施例2中之黏晶切割薄膜的製作 Production of the die-bonded cutting film in Example 2

使用EVA薄膜2(厚度100μm)代替EVA薄膜1，除此以外，藉由與實施例1相同的方法得到實施例2的黏晶切割薄膜。 Except that EVA film 2 (thickness 100 μm) was used instead of EVA film 1, the die-bonded dicing film of Example 2 was obtained by the same method as Example 1.

實施例3中之黏晶切割薄膜的製作 Production of the die-bonded cutting film in Example 3

使用EVA薄膜3(厚度100μm)代替EVA薄膜1，除此以外，藉由與實施例1相同的方法得到實施例3的黏晶切割薄膜。 Except that EVA film 3 (thickness 100 μm) was used instead of EVA film 1, the die-bonded dicing film of Example 3 was obtained by the same method as Example 1.

實施例4中之黏晶切割薄膜的製作 Fabrication of the die-bonded cutting film in Example 4

以60℃、10mm/秒在黏接劑層上層疊黏合劑層，以60℃、10mm/秒在黏合劑層上層疊EVA薄膜3，由此得到實施例4的黏晶切割薄膜。實施例4的黏晶切割薄膜具有由EVA薄膜3及黏合劑層構成的黏合薄膜。實施例4的黏晶切割薄膜還具有黏接劑層。黏合劑層於位於黏接劑層及EVA薄膜3之間。 The adhesive layer was laminated on the adhesive layer at 60° C. and 10 mm/sec, and the EVA film 3 was laminated on the adhesive layer at 60° C. and 10 mm/sec. Thus, the die-bonding dicing film of Example 4 was obtained. The die-bonding dicing film of Example 4 has an adhesive film composed of an EVA film 3 and an adhesive layer. The die-bonding dicing film of Example 4 also has an adhesive layer. The adhesive layer is located between the adhesive layer and the EVA film 3.

比較例1中之黏晶切割薄膜的製作 Production of the die-bonded dicing film in Comparative Example 1

使用離聚物薄膜(厚度100μm)代替EVA薄膜1，除此以外，藉由與實施例1相同的方法得到比較例1的黏晶切割薄膜。 Except that an ionomer film (thickness 100 μm) was used instead of the EVA film 1, the die-bonded dicing film of Comparative Example 1 was obtained by the same method as in Example 1.

比較例2中之黏晶切割薄膜的製作 The production of the die-bonded dicing film in Comparative Example 2

使用聚丙烯系薄膜1(厚度100μm)代替EVA薄膜1，除此以外，藉由與實施例1相同的方法得到比較例2的黏晶切割薄膜。 Except that a polypropylene film 1 (thickness 100 μm) was used instead of the EVA film 1, the die-bonded dicing film of Comparative Example 2 was obtained by the same method as Example 1.

比較例3中之黏晶切割薄膜的製作 Production of the die-bonded dicing film in Comparative Example 3

使用聚丙烯系薄膜2(厚度100μm)代替EVA薄膜1，除此以外，藉由與實施例1相同的方法得到比較例3的黏晶切割薄膜。 Except that the polypropylene film 2 (thickness 100 μm) was used instead of the EVA film 1, the die-bonded dicing film of Comparative Example 3 was obtained by the same method as Example 1.

比較例4中之黏晶切割薄膜的製作 Production of the die-bonded dicing film in Comparative Example 4

使用聚對苯二甲酸乙二醇酯薄膜(厚度100μm)代替EVA薄膜1，除此以外，藉由與實施例1相同的方法得到比較例4的黏晶切割薄膜。 Except that a polyethylene terephthalate film (thickness 100 μm) was used instead of the EVA film 1, the die-bonded dicing film of Comparative Example 4 was obtained by the same method as Example 1.

比較例5中之黏晶切割薄膜的製作 Production of the die-bonded dicing film in Comparative Example 5

使用聚乙烯薄膜(厚度100μm)代替EVA薄膜1，除此以 外，藉由與實施例1相同的方法得到比較例5的黏晶切割薄膜。 Use polyethylene film (thickness 100μm) instead of EVA film 1, in addition to In addition, the die-bonded dicing film of Comparative Example 5 was obtained by the same method as in Example 1.

定義 definition

將EVA薄膜1~3、離聚物薄膜、聚丙烯系薄膜1~2、聚對苯二甲酸乙二醇酯薄膜、聚乙烯薄膜統稱為“基材薄膜”。 EVA films 1-3, ionomer films, polypropylene films 1-2, polyethylene terephthalate films, and polyethylene films are collectively referred to as "base film".

基材薄膜的熔點的測定 實施例1~3．比較例1~5 Measurement of the melting point of the substrate film Examples 1 to 3. Comparative example 1~5

從基材薄膜切出10mmg的試樣。使用差示掃描量熱計(SII NanoTechnology Inc.製的DSC6220)，以試樣10mmg、升溫速度5℃/分鐘在30℃到200℃進行差示掃描量熱測定。讀取DSC曲線中的熔解峰溫度。將結果示於於表1。 A 10mmg sample was cut out from the base film. Using a differential scanning calorimeter (DSC6220 manufactured by SII NanoTechnology Inc.), the differential scanning calorimetry was performed at a temperature of 30°C to 200°C with a sample of 10 mmg and a temperature increase rate of 5°C/min. Read the melting peak temperature in the DSC curve. The results are shown in Table 1.

黏合薄膜的熔點的測定 實施例4 Determination of the melting point of the adhesive film Example 4

從黏合薄膜切出10mmg的試樣。使用差示掃描量熱計(SII NanoTechnology Inc.製的DSC6220)，以試樣10mmg、升溫速度5℃/分鐘在30℃到200℃進行差示掃描量熱測定。於由於DSC曲線中存在多個峰，因此讀取最初出現的熔解峰的峰值溫度。將結果示於表1。 Cut a 10mmg sample from the adhesive film. Using a differential scanning calorimeter (DSC6220 manufactured by SII NanoTechnology Inc.), the differential scanning calorimetry was performed at a temperature of 30°C to 200°C with a sample of 10 mmg and a temperature increase rate of 5°C/min. Since there are multiple peaks in the DSC curve, the peak temperature of the melting peak that appears first is read. The results are shown in Table 1.

基材薄膜的拉伸試驗 實施例1~3．比較例1~5 Tensile test of substrate film Examples 1~3. Comparative example 1~5

從基材薄膜切出寬度25mm、長度150mm的試樣。使用拉伸試驗機(株式會社島津製作所製的Autograph)，以室溫23℃、寬度25mm、長度150mm、卡盤間距離100mm、 拉伸速度300mm/分鐘進行拉伸試驗。將連結應力-應變曲線中的拉伸載荷1N時的點與2N時的點的直線的斜率作為拉伸模量。將拉伸模量示於於表1。斷裂時的伸長率也示於於表1。 A sample with a width of 25 mm and a length of 150 mm was cut out from the base film. Using a tensile testing machine (Autograph manufactured by Shimadzu Corporation), set the temperature at 23°C, width 25mm, length 150mm, distance between chucks 100mm, The tensile test was performed at a tensile speed of 300 mm/min. The slope of a straight line connecting a point at a tensile load of 1N and a point at 2N in the stress-strain curve was taken as the tensile modulus. The tensile modulus is shown in Table 1. The elongation at break is also shown in Table 1.

黏合薄膜的拉伸試驗 實施例4 Tensile test of adhesive film Example 4

從黏合薄膜切出寬度25mm、長度150mm的試樣。使用拉伸試驗機(株式會社島津製作所製的Autograph)，以室溫23℃、寬度25mm、長度150mm、卡盤間距離100mm、拉伸速度300mm/分鐘進行拉伸試驗。將連結應力-應變曲線中的拉伸載荷1N時的點及2N時的點的直線的斜率作為拉伸模量。將拉伸模量示於於表1。斷裂時的伸長率也示於於表1。 Cut a sample with a width of 25 mm and a length of 150 mm from the adhesive film. Using a tensile tester (Autograph manufactured by Shimadzu Corporation), a tensile test was performed at a room temperature of 23°C, a width of 25 mm, a length of 150 mm, a distance between chucks of 100 mm, and a tensile speed of 300 mm/min. The slope of a straight line connecting a point at a tensile load of 1N and a point at 2N in the stress-strain curve was taken as the tensile modulus. The tensile modulus is shown in Table 1. The elongation at break is also shown in Table 1.

纖維狀屑的評價 實施例1~4．比較例1~5 Evaluation of fibrous chips Examples 1 to 4. Comparative example 1~5

將切割環及60℃的鏡面晶圓(厚度100μm)固定於於黏晶切割薄膜。使用切割裝置(DISCO Inc.製的DFD6361)，以單切割模式(single cut mode)、刃類型Z1：NBC-ZH 203O-SE 27HCDD、測桿50Krpm、刃高度70μm(對基材進行切入薄膜深度30μm的設定)、切割速度30mm/秒、水量1L/分鐘，形成10mm×10mm的晶片。頂起晶片，拆下10個晶片，觀察基材薄膜的切割線。有長度2mm以上的纖維狀屑時判定為×。沒有長度2mm以上的纖維狀屑時判定為○。將結果示於表1。 Fix the dicing ring and 60°C mirror wafer (thickness 100μm) to the die-bonding dicing film. Using a cutting device (DFD6361 manufactured by DISCO Inc.), in single cut mode, blade type Z1: NBC-ZH 203O-SE 27HCDD, measuring rod 50Krpm, blade height 70μm (cutting the substrate into the film depth 30μm The setting), the cutting speed is 30mm/sec, and the water volume is 1L/min, to form a 10mm×10mm wafer. Lift up the wafer, remove 10 wafers, and observe the cutting line of the substrate film. When there are fibrous chips with a length of 2 mm or more, it is judged as ×. When there is no fibrous chips with a length of 2 mm or more, it is judged as ○. The results are shown in Table 1.

擴晶(expand)的評價 實施例1~4．比較例 1~5 Evaluation of Expanding Examples 1 to 4. Comparative example 1~5

將切割環及60℃的鏡面晶圓(厚度100μm)固定於黏晶切割薄膜。使用切割裝置(DISCO Inc.製的DFD6361)，以單切割模式、刃類型Z1：NBC-ZH 203O-SE 27HCDD、測桿50Krpm、刃高度70μm、切割速度30mm/秒、水量1L/分鐘形成10mm×10mm的晶片。使用焊接裝置(Shinkawa Ltd.製的SPA-300)，以10mm擴晶保持10分鐘。擴晶結束後，發生黏晶切割薄膜自切割環的剝離、基材薄膜撕裂中的任一者時、或強度過高從而不能擴展時判定為×。除×以外時判定為○。將結果示於表1。 Fix the dicing ring and 60°C mirror wafer (thickness 100μm) to the die bond dicing film. Using a cutting device (DFD6361 manufactured by DISCO Inc.), in single cutting mode, blade type Z1: NBC-ZH 203O-SE 27HCDD, measuring rod 50Krpm, blade height 70μm, cutting speed 30mm/sec, water volume 1L/min to form 10mm× 10mm wafer. Using a welding device (SPA-300 manufactured by Shinkawa Ltd.), the crystal was expanded by 10 mm and held for 10 minutes. After the crystal expansion is completed, when any one of the peeling of the die-bonding dicing film from the dicing ring or the base film tear occurs, or the strength is too high to expand, it is judged as x. Other than ×, it is judged as ○. The results are shown in Table 1.

Figure 106113234-A0305-02-0021-1
Figure 106113234-A0305-02-0021-1

1:黏晶切割膠帶 1: Adhesive wafer cutting tape

11:隔膜 11: Diaphragm

12a、12b、12c、12m:黏晶切割薄膜 12a, 12b, 12c, 12m: Die-bonded cutting film

Claims (4)

一種黏晶切割(dicing die bonding)薄膜，其包含切割支撐層及黏晶層，所述切割支撐層的熔點為60℃~100℃，所述切割支撐層在室溫下的拉伸模量為30N/mm2~100N/mm2，所述切割支撐層包含基材層、及與所述黏晶層接觸的黏合劑層，所述切割支撐層的熔點是以升溫速度5℃/分鐘、從30℃到200℃的條件進行差示掃描量熱測定(DSC)，於藉此獲得之DSC曲線中最初出現的熔解峰的峰值溫度。 A dicing die bonding film comprises a dicing support layer and a die bonding layer, the melting point of the dicing support layer is 60°C to 100°C, and the tensile modulus of the dicing die bonding layer at room temperature is 30N/mm 2 ~100N/mm 2 , the dicing support layer includes a substrate layer and an adhesive layer in contact with the crystal bonding layer, and the melting point of the dicing support layer is a temperature rise rate of 5° C./min. Differential scanning calorimetry (DSC) was performed under the conditions of 30°C to 200°C, and the peak temperature of the melting peak that appeared first in the DSC curve obtained thereby. 如請求項1之黏晶切割薄膜，其中，所述切割支撐層包含乙烯-乙酸乙烯酯共聚物。 The die bonding dicing film of claim 1, wherein the dicing support layer comprises ethylene-vinyl acetate copolymer. 一種黏晶切割(dicing die bonding)膠帶，其包含隔膜及與所述隔膜接觸之如請求項1或2之黏晶切割薄膜。 A dicing die bonding tape includes a diaphragm and a dicing die bonding film as claimed in claim 1 or 2 in contact with the diaphragm. 一種半導體裝置之製造方法，其包括如下步驟：對固定於如請求項1或2之黏晶切割薄膜的半導體晶圓進行切割的步驟；及將藉由所述對半導體晶圓進行切割步驟所形成的黏晶前晶片壓接在被黏物上的步驟。 A method of manufacturing a semiconductor device, comprising the steps of: cutting a semiconductor wafer fixed on a die-bonding dicing film as claimed in claim 1 or 2; and forming the semiconductor wafer by the step of cutting the semiconductor wafer The step of crimping the wafer on the adherend before die bonding.
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