TWI693201B - 液晶顯示面板 - Google Patents
液晶顯示面板 Download PDFInfo
- Publication number
- TWI693201B TWI693201B TW104139835A TW104139835A TWI693201B TW I693201 B TWI693201 B TW I693201B TW 104139835 A TW104139835 A TW 104139835A TW 104139835 A TW104139835 A TW 104139835A TW I693201 B TWI693201 B TW I693201B
- Authority
- TW
- Taiwan
- Prior art keywords
- mgo
- alkali
- substrate
- liquid crystal
- display panel
- Prior art date
Links
- 239000011521 glass Substances 0.000 claims abstract description 129
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 239000000126 substance Substances 0.000 claims abstract description 23
- 239000003513 alkali Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 23
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 description 67
- 238000004031 devitrification Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 9
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 230000005484 gravity Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 235000019738 Limestone Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000006028 limestone Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3605—Coatings of the type glass/metal/inorganic compound
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3636—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing silicon, hydrogenated silicon or a silicide
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3671—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electrodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
- C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
- C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Surface Treatment Of Glass (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
Abstract
本發明之目的在於抑制製造製程之最高溫度相對較低之大型液晶顯示面板之圖案偏差。本發明係關於一種液晶顯示面板,其包括特定尺寸之包含金屬之配線膜、包含無機物質之絕緣膜及無鹼玻璃之基板,且該金屬於室溫下之楊氏模數(E)與熱膨脹係數(α)之乘積為特定範圍內,該無機物質之α小於該無鹼玻璃,關於該無鹼玻璃,其E為70~95GPa、α為32×10-7~45×10-7(1/℃)且E及α滿足特定之式,而且具有特定之組成。
Description
本發明係關於一種液晶顯示面板。詳細而言,係關於一種於包含特定之無鹼玻璃之基板上形成像素陣列而成之液晶顯示面板。
近年來,於液晶顯示面板之大型化且高精細化中,抑制製造步驟中之由熱處理所導致之像素陣列之圖案偏差成為最重要課題之一。根據高精細化之要求,形成於基板上之半導體元件陣列之金屬配線變得更細,因此圖案偏差之容許度逐漸變小。
關於圖案偏差,普遍認為其原因在於由液晶顯示面板製造步驟中之玻璃基板之結構弛豫所導致之熱收縮。為了抑制該情況而提出之第1方法係減小玻璃之平均熱膨脹係數。作為使用該方法者,提出有30~380℃下之平均熱膨脹係數為25×10-7~36×10-7/℃之無鹼玻璃(專利文獻1)、50~300℃下之平均熱膨脹係數為30×10-7~43×10-7/℃之無鹼玻璃(專利文獻2)。又,亦提出有使平均熱膨脹係數已接近於供於玻璃基板上成膜之a-Si、p-Si等之玻璃(專利文獻3)。
第2方法係提高玻璃之應變點。上述專利文獻1提出將應變點設為640℃以上,專利文獻2提出將應變點設為710℃以上且未達725℃,專利文獻3提出將應變點設為680℃以上且未達740℃。
除上述以外,為了抑制玻璃之彎曲,亦提出降低玻璃之密度(專利文獻1、2)、提高楊氏模數(專利文獻3)等。
[專利文獻1]日本專利特開2002-308643號公報
[專利文獻2]國際公開第2013/161902號
[專利文獻3]日本專利特開2014-118313號公報
然而,關於製造製程中之熱處理等之最高溫度為相對較低之200~450℃左右之情形時的圖案偏差,難以利用玻璃之結構弛豫之影響進行說明。實際上存在若降低基板玻璃之平均熱膨脹係數,則反而圖案偏差變大之情形。
本發明鑒於此種狀況,其目的在於抑制製造製程之最高溫度相對較低之大型液晶顯示面板之圖案偏差。
本發明係一種液晶顯示面板,其係主動矩陣驅動形式之液晶顯示面板,該液晶顯示面板係利用包含如下步驟之製造製程而製造者:於無鹼玻璃之基板之至少一表面上將包含金屬之膜進行成膜,將所獲得之金屬膜圖案化而製成配線膜,其次將包含無機物質之閘極絕緣膜進行成膜,且該液晶顯示面板係於上述無鹼玻璃之基板之至少一表面上具備上述包含金屬之配線膜及上述包含無機物質之絕緣膜而成,即,本發明係一種主動矩陣驅動形式之液晶顯示面板,該液晶顯示面板係於無鹼玻璃之基板之至少一表面上具備將包含金屬之金屬膜圖案化而成之配線膜、及包含無機物質之閘極絕緣膜而成,該配線膜之厚度為0.1μm以上,該絕緣膜之厚度為100nm以上,
該基板之長邊為1800mm以上、短邊為1500mm以上、厚度為0.5mm以下,關於該金屬,其室溫下之楊氏模數與熱膨脹係數之乘積為10,000×10-7GPa/℃~25,000×10-7GPa/℃,該無機物質具有小於該無鹼玻璃之平均熱膨脹係數(50℃~350℃),關於該無鹼玻璃,其楊氏模數(E)為70~95GPa,平均熱膨脹係數(50℃~350℃)α為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)
及以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~15、B2O3 0.1~5、MgO 2~12、CaO 3~11、SrO 0~10、BaO 0~5、ZrO2 0~2
較佳為以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~15、B2O3 0.1~未達3.0、MgO 2~10、CaO 3~11、SrO 0.1~10、
BaO 0~5、ZrO2 0~2。
本發明者等人進行各種研究,結果發現:對於製造製程中之熱處理之最高溫度相對較低(例如為450℃以下)之大型液晶顯示面板而言,配線膜金屬及絕緣膜介電體與基板玻璃之組合之影響無法無視。可認為於製造製程中之熱處理之最高溫度相對較低之情形時,玻璃基板之翹曲為引起圖案偏差之主要原因而並非先前所考慮之結構弛豫,但其並非限定本發明之主旨。上述本發明之液晶顯示面板藉由將構成基板之玻璃、構成配線之金屬、構成絕緣膜之介電體、及顯示面板之設計態樣設為特定之組合,而顯著地抑制圖案偏差。
圖1(a)~(c)係表示例1之玻璃基板之變形狀態之圖,圖1(b)係表示步驟1、圖1(a)係表示步驟2、圖1(c)係表示步驟3之變形狀態之圖。
圖2係模擬於將實施例中所製備之玻璃用作基板,於其上形成有特定膜厚之銅圖案、及覆蓋該銅圖案之特定膜厚之氮化矽膜之情形時的基板之翹曲並繪製而成之曲線圖。
首先,對構成本發明之液晶顯示面板中之玻璃基板之無鹼玻璃進行說明。本發明中,所謂「無鹼」玻璃,意指實質上不含有Na2O、K2O等鹼金屬氧化物之玻璃。此處,所謂「實質上不含有」,意指除不可避免之雜質外不含有(以下相同)。本發明中,不可避免含有之鹼金屬至多為0.1莫耳%左右。
該無鹼玻璃除形成該玻璃之骨架之SiO2、Al2O3以外,亦含有特定量之鹼土金屬氧化物等。首先,對該等各成分之以氧化物基準計之含量進行說明。以下,只要無特別說明,則「%」意指「莫耳%」。
若SiO2之含量未達66%,則有應變點未充分變高,熱膨脹係數及比重變得過高之傾向。因此,SiO2之含量為66%以上,較佳為66.5%以上。另一方面,若含量超過74%,則有玻璃黏度成為102泊(dPa‧s)之溫度(T2)變高等,熔解性變差,失透溫度上升,楊氏模數降低之傾向。因此,SiO2之含量為74%以下,較佳為73%以下,更佳為72%以下,進而較佳為71%以下。
Al2O3有抑制分相性,提高應變點,提高楊氏模數之效果,若其含量未達10%,則難以充分地獲得上述效果。因此,Al2O3之含量為10%以上,較佳為11%以上,更佳為12%以上。另一方面,若含量超過15%,則有T2上升,熔解性變差,及失透溫度亦變高之傾向。因此,Al2O3之含量為15%以下,較佳為14%以下,更佳為13%以下。
B2O3係有改善玻璃之熔解性,降低失透溫度之效果之必需成分,若其量超過5%,則有楊氏模數過度降低,且熱膨脹係數變得過低之傾向。因此,B2O3之含量為5%以下,較佳為4%以下,進而為未達3%,更佳為2.7%以下,進而較佳為2.5%以下,進而更佳為2.0%以下,尤佳為1.5%以下。另一方面,若含量未達0.1%,則熔解性變差,變得不易於獲得均質之玻璃。因此,B2O3之含量為0.1%以上,較佳為0.2%以上,更佳為0.3%以上,進而較佳為0.5%以上。
MgO有不會過度提高熱膨脹係數,且不會使應變點大幅降低,且提高熔解性,降低比重之效果,但若其含量未達2%,則無法充分地獲得上述效果。因此,MgO之含量為2%以上,較佳為3%以上,更佳為4%以上。另一方面,若含量超過12%,則失透溫度變高。因此,MgO之含量為12%以下,較佳為10%以下,更佳為9.5%以下,進而較佳為9%以下。
CaO亦有不會過度提高熱膨脹係數,且不會使應變點大幅降低,且提高熔解性,提高楊氏模數,降低失透溫度之效果,若其含量未達
3%,則無法充分地獲得上述效果。CaO之含量為3%以上,較佳為4%以上,更佳為5%以上。另一方面,若含量超過11%,則有失透溫度變高,作為CaO之原料之石灰石(CaCO3)中之雜質即磷之量變多之虞。因此,CaO之含量為11%以下,較佳為10%以下,更佳為9%以下,進而較佳為8%以下。
SrO並非必需成分,但有不會使失透溫度上升且提高熔解性之效果,又,為了獲得相對提高熱膨脹率之效果,SrO之含量較佳為0.1%以上,更佳為1%以上,進而較佳為2%以上。另一方面,若含量超過10%,則有過度提高比重及熱膨脹係數之傾向。因此,SrO之含量為10%以下,較佳為8%以下,更佳為7%以下,進而較佳為6%以下。
BaO並非必需成分,但有提高熔解性或提高耐失透性之效果,故其含量亦可為5%以下。然而,若超過上述量,則有密度增加之傾向。BaO之含量較佳為4.5%以下,更佳為4%以下,進而較佳為1%以下,尤佳為0.5%以下,最佳為實質上不含有。
ZrO2亦並非必需成分,但有降低熔融溫度,及促進焙燒時之結晶析出之效果,故其含量亦可為2%以下。若超過上述量,則玻璃之耐失透性降低,又,有相對介電常數(ε)變大之傾向。ZrO2之含量較佳為1.5%以下,更佳為1%以下,進而較佳為0.5%以下,最佳為實質上不含有。
關於本發明之無鹼玻璃,若鹼土金屬氧化物、即MgO、CaO、SrO及BaO之合量之合計(莫耳%)未達15%,則有楊氏模數變低,又,熔解性變差之傾向。因此,合計較佳為15%以上,更佳為16%以上,進而較佳為17%以上。另一方面,若合計超過21%,則有熱膨脹係數變得過大之傾向。合計較佳為20%以下,更佳為19%以下,進而較佳為18%以下。
進而,較佳為於MgO與其他鹼土金屬之間,含量滿足下述三個
條件。藉此,可不提高失透溫度而提高應變點,進而使玻璃之黏性、尤其是玻璃黏度成為104dPa‧s之溫度T4降低。
MgO/(MgO+CaO+SrO+BaO)較佳為0.20以上,更佳為0.25以上,進而較佳為0.3以上,尤佳為0.4以上,最佳為0.45以上。
MgO/(MgO+CaO)為0.3以上,更佳為0.4以上,進而較佳為0.52以上,尤佳為0.55以上,最佳為0.6以上。
MgO/(MgO+SrO)為0.6以上,更佳為0.63以上,進而較佳為0.65以上。
又,較佳為Al2O3×(MgO/(MgO+CaO+SrO+BaO))為5.5以上。若該比未達5.5,則有楊氏模數變低之傾向。該比更佳為5.75以上,進而較佳為6以上,最佳為6.25以上。
關於本發明之無鹼玻璃,發現若各成分之關係、具體而言以氧化物基準之莫耳%表示之組成為759-13.1×SiO2-7.5×Al2O3-15.5×B2O3+9.7×MgO+21.8×CaO+27.2×SrO+27.9×BaO≧0,則熱膨脹率及楊氏模數之範圍成為用以抑制翹曲之較佳範圍。
除上述各成分以外,該玻璃亦可以總量計2%以下、較佳為1%以下、更佳為0.5%以下而含有具有提高玻璃之熔解性、澄清性、成形性等之效果之ZnO、Fe2O3、SO3、F、Cl、SnO2。
另一方面,關於該玻璃,為了不使設於玻璃板表面之金屬或氧化物等之薄膜之特性劣化產生,較佳為實質上不含有P2O5。進而,為了使玻璃之再利用變容易,較佳為實質上不含有PbO、As2O3、Sb2O3。
其次,對上述無鹼玻璃之各特性進行說明。
該玻璃之50~350℃下之平均熱膨脹係數(α)為45×10-7/℃以下。藉此,耐熱衝擊性較大,可提高面板製造時之生產性。α較佳為42×10-7/℃以下,更佳為41×10-7/℃以下,進而較佳為40×10-7/℃以
下。另一方面,若α過小,則成膜時之翹曲變大,因此為32×10-7/℃以上。α較佳為33×10-7/℃以上。更佳為35×10-7/℃以上。
該玻璃之楊氏模數(E)為70GPa以上。藉由該較高之楊氏模數而玻璃之破壞韌性較高,適於大型顯示器用基板。該玻璃之楊氏模數較佳為75GPa以上,更佳為78GPa以上,進而較佳為80GPa以上,尤佳為83GPa以上。另一方面,若楊氏模數過高,則玻璃之切斷性變差,因此為95GPa以下。較佳為90GPa以下,更佳為88GPa以下。
上述α及E滿足下述式(1)。
20α+7E≧1310 (1)
此處,α之單位為10-7/℃,E之單位為GPa。於滿足上述式(1)之情形時,即便為大型基板,由加熱所導致之翹曲亦較小。
該玻璃之黏度η成為102泊(dPa‧s)之溫度T2較佳為1710℃以下,藉此熔解相對容易。T2更佳為未達1710℃,進而較佳為1700℃以下,進而更佳為1690℃以下。
該玻璃之黏度η成為104泊之溫度T4較佳為1320℃以下,適於浮式法成形。T4更佳為1315℃以下,進而較佳為1310℃以下,進而更佳為1305℃以下。
該玻璃之應變點較佳為680℃以上,更佳為710℃以上,進而較佳為730℃以上。
因與上述應變點相同之原因,該玻璃之玻璃轉移點較佳為760℃以上,更佳為770℃以上,進而較佳為780℃以上。
該玻璃之比重較佳為2.65以下,更佳為2.64以下,進而較佳為2.62以下。
該玻璃之失透溫度較佳為1350℃以下,藉此利用浮式法之成形變得更容易。該玻璃之失透溫度更佳為1340℃以下,進而較佳為1330℃以下。關於本發明中之失透溫度,係於鉑製之盤中加入經粉碎之玻
璃粒子,於控制為一定溫度之電爐中進行17小時熱處理,於熱處理後利用光學顯微鏡進行觀察,藉此獲得之於玻璃之表面及內部析出結晶之溫度。
該玻璃之光彈性常數較佳為31nm/MPa/cm以下。有時發現如下現象,即玻璃基板因液晶顯示面板製造步驟或液晶顯示器裝置使用時所產生之應力而具有雙折射性,藉此黑色之顯示成為灰色,而液晶顯示器之對比度降低。藉由將光彈性常數設為31nm/MPa/cm以下,可抑制該現象。該玻璃之光彈性常數更佳為30nm/MPa/cm以下,進而較佳為29nm/MPa/cm以下,進而更佳為28.5nm/MPa/cm以下,尤佳為28nm/MPa/cm以下。又,若考慮其他物性確保之容易性,則該玻璃之光彈性常數較佳為23nm/MPa/cm以上,更佳為25nm/MPa/cm以上。再者,光彈性常數可藉由圓盤壓縮法進行測定。
該玻璃之相對介電常數較佳為5.6以上。於如日本專利特開2011-70092號公報所記載之內嵌型之觸控面板(於液晶顯示面板內內置有觸控感測器者)之情形時,就觸控感測器之感測感度之提高、驅動電壓之降低、節電化之觀點而言,玻璃基板之相對介電常數較高者較佳。藉由將相對介電常數設為5.6以上,觸控感測器之感測感度提高。該玻璃之相對介電常數更佳為5.8以上,進而較佳為6.0以上。若考慮進而抑制液晶顯示器之圖像之顯示品質降低(串擾)、耗電增大、高精細化變難,則該玻璃之相對介電常數較佳為7.5以下,更佳為7以下,進而較佳為6.5以下。再者,相對介電常數可利用JIS C-2141所記載之方法進行測定。
本發明之液晶顯示面板係於包含上述無鹼玻璃之基板上具備TFT(Thin-Film Transistor,薄膜電晶體)等開關元件的主動矩陣驅動形式之面板。該基板之長邊為1800mm以上,短邊為1500mm以上。較佳為長邊為2100mm以上,短邊為1800mm以上。更佳為長邊為2400
mm以上,短邊為2100mm以上。又,該基板之厚度為0.5mm以下,較佳為0.4mm以下,進而較佳為0.3mm以下。關於該基板之各邊之上限及厚度之下限,並無特別限制,例如長邊為3200mm以下,短邊為2900mm以下,板厚為0.05mm以上。
於該基板上之至少一表面上具備包含金屬之配線膜及包含無機物質之絕緣膜。就該等膜與無鹼玻璃之各特性之組合之觀點而言,本發明抑制圖案偏差。
該配線膜構成包含閘極電極、閘極匯流排線、輔助電容配線、輔助電容電極等之電路圖案。關於該配線膜,其厚度為0.1μm以上。關於厚度之上限值,並無特別限制,實際上為0.3~0.6μm左右。於具有該厚度之情形時,可將閘極匯流排線以寬4~10μm左右之細線之形式形成。
關於該金屬,其室溫下之楊氏模數與熱膨脹係數之乘積為10,000×10-7GPa/℃~25,000×10-7GPa/℃,較佳為10,000×10-7GPa/℃~24,000×10-7GPa/℃,更佳為10,000×10-7GPa/℃~22,000×10-7GPa/℃。乘積為上述範圍外者有於配線膜成膜後增大玻璃基板之翹曲之傾向。
作為該金屬之例,可列舉銅、鋁、鉬、鈦、鉻、鉭、鎢、及該等之合金。閘極電極亦可設為積層有該等金屬之構造。較佳為使用銅、鋁、鉬或該等之合金,更佳為使用銅、鋁、或鉬。該等於室溫下之楊氏模數與熱膨脹係數之乘積係如以下所示。
銅:21,000~23,000×10-7GPa/℃
鋁:16,000~17,000×10-7GPa/℃
鉬:15,000~17,000×10-7GPa/℃
該基板具備覆蓋上述電路圖案之包含無機物質之絕緣膜。關於該絕緣膜,其厚度為100nm以上。關於厚度之上限值,並無特別限
制,實際上為300~400nm左右。
該無機物質具有小於上述無鹼玻璃之平均熱膨脹係數(α)、即32×10-7~45×10-7/℃之平均熱膨脹係數(50~350℃)。作為此種無機物質之例,可列舉氧化矽、氮化矽、氮氧化矽、氧化鋁、氮化鋁、氮氧化鋁等,亦可將該等設為單層或積層構造。較佳為使用氮化矽、氧化矽、或氮氧化矽。該等之平均熱膨脹係數例如如以下所示。
氮化矽:32×10-7/℃
氧化矽:5.5×10-7/℃
再者,關於氮氧化矽之熱膨脹率,可認為係根據氧氮比而取上述之中間數值。
再者,已知有藉由成膜條件之控制而膜應力產生變化之情況,藉由改變膜應力,可適當減少玻璃基板之翹曲。然而,於閘極電極用之金屬膜之情形時,成膜時之外加輸出變得過大,而異常放電之可能性變高。又,於閘極絕緣膜之情形時,可使用氫化等,但有無法獲得所需特性之電晶體之可能性。因此,於成膜條件存在限制之情形、或欲進一步抑制翹曲之情形時,藉由應用本發明之特定之玻璃基板,變得可有效地抑制翹曲。
若液晶顯示面板變得高精細,則金屬配線膜變細,因此為了維持電阻值,金屬配線膜變厚。於玻璃基板上形成有金屬配線膜之電路圖案,絕緣膜覆蓋該配線之間及其上而形成於玻璃基板之大致整面。此時發現如下情況,即根據玻璃基板、變厚之金屬配線膜及絕緣膜各自之熱膨脹係數及楊氏模數之不同,而於製造步驟中之熱處理時,於玻璃基板、金屬配線膜及絕緣膜成為一體之狀態下產生翹曲。尤其是於金屬配線膜之電路圖案大部分如縱方向或橫方向般偏向之情形時,發現翹曲容易變得顯著。若於玻璃基板產生翹曲,則變得容易產生自配線或元件之最初設計位置之圖案偏差。
於該絕緣膜之上側具備TFT之活性層、鈍化膜、平坦化膜等而成為TFT基板。TFT基板可藉由公知之製造步驟進行製造,例如該製造步驟之最高溫度較佳為450℃以下。該最高溫度通常為TFT之活性層形成製程中之最高溫度。再者,有根據所應用之半導體之種類或製程,最高溫度更佳為400℃以下,或者進而較佳為370℃以下,進而更佳為350℃以下之情形。又,若考慮製造製程或TFT性能之穩定性,則最高溫度較佳為200℃以上,更佳為250℃以上,進而較佳為300℃以上。作為此種活性層用之半導體,例如可列舉非晶矽(a-Si)、銦-鎵-鋅之氧化物半導體。該TFT可為底閘極型(逆交錯型),亦可為頂閘極型(交錯型),為了充分地發揮本發明之效果,較佳為多在TFT製造步驟之初期採用形成金屬膜及絕緣膜之製程之逆交錯型者。作為鈍化膜、平坦化膜等,亦可使用公知之材料。
即,本發明之液晶顯示面板係主動矩陣驅動形式之液晶顯示面板,且該液晶顯示面板係利用包含如下步驟之製造製程而製造者:例如於如非晶矽(a-Si)或銦-鎵-鋅之氧化物半導體等之無鹼玻璃之基板之至少一表面上將包含金屬之膜進行成膜,使該金屬膜圖案化而製成配線膜,進而將包含無機物質之閘極絕緣膜進行成膜。即,係如LTPS(Low Temperature Poly-silicon,低溫多晶矽技術)之與高溫熱處理之製造製程不同者,本發明之液晶顯示面板(將非晶矽(a-Si)或銦-鎵-鋅系之氧化物半導體等用作TFT之液晶顯示面板)之上述製造製程之最高溫度為低溫熱處理之溫度,例如為450℃以下。本發明之液晶顯示面板係於上述無鹼玻璃之基板之至少一表面上具備上述包含金屬之配線膜及上述包含無機物質之絕緣膜而成。
該TFT基板係與彩色濾光片基板、液晶分子、密封材、偏光板、導光板、各種光學膜、及背光裝置等組合而成為液晶顯示面板。顯示器之尺寸係根據用途而適當選擇,例如成為對角線長度3~10英吋左
右之移動式顯示器用之面板、或對角線長度30~70英吋之4K電視用顯示器等。關於精細度,為30英吋以上者時較佳為100 pixel per inch(以下ppi)以上,更佳為150 ppi以上,進而較佳為200 ppi以上。於移動式顯示器用途中,精細度較佳為300 ppi以上,更佳為400 ppi以上,進而較佳為500 ppi以上。
[實施例]
以下,藉由實施例及比較例而進一步詳細地說明本發明,但本發明並不限定於該等實施例。
將各成分之原料以玻璃組成成為表1所示之目標之玻璃組成(單位:莫耳%)之方式進行調製,並使用鉑坩堝以1500~1600℃之溫度使該等熔解。於熔解時,使用鉑攪拌器進行攪拌而進行玻璃之均質化。其次,使熔解玻璃流出,成形為板狀後進行徐冷。使用該玻璃板,進行各種評價。表1中,例1~4及7~12係成為本發明之例之玻璃,例5~6係成為比較用之例之玻璃。括號表示計算值。
表1中表示玻璃組成(單位:莫耳%)及50~300℃下之平均熱膨脹係數(單位:×10-7/℃)、應變點(單位:℃)、玻璃轉移點(單位:℃)、比重(單位:g/cm3)、楊氏模數(GPa)(藉由超音波法進行測定)、作為高溫黏性值之成為熔解性之標準之溫度T2(玻璃黏度η成為102dPa‧s之溫度、單位:℃)、及成為浮式法成形性及熔融成形性之標準之溫度T4(玻璃黏度η成為104dPa‧s之溫度、單位:℃)、失透溫度(單位:℃)、光彈性常數(單位:nm/MPa/cm)(藉由圓盤壓縮法進行測定)、及相對介電常數(藉由JIS C-2141所記載之方法進行測定)。
為了確認本發明之效果,使用有限元素法計算玻璃基板之變形。使用MSC公司之MARC作為計算軟體,按照以下順序計算。首先,作為步驟1,將例1之玻璃用作基板尺寸G6(長邊1800mm、短邊1500mm)、厚度0.5mm之基板,於其上以200℃塗佈膜厚200nm之銅膜,冷卻至室溫(20℃),計算該情形時之基板變形。其次,作為步驟2,為了模擬寬7μm、間距70μm之圖案化,於室溫下,將如相對於基板之長軸方向,短軸方向之楊氏模數成為1/10之異向性賦予至銅膜,計算該情形時之基板變形。進而,作為步驟3,將於步驟2中賦予有異向性之基板加熱至200℃,將該氮化矽膜以膜厚200nm之方式進行塗佈,冷卻至室溫(20℃),計算該情形時之基板變形。銅膜中之銅於室溫下之楊氏模數與熱膨脹係數之乘積為21,000×10-7~23,000×10-7GPa/℃。又,氮化矽之平均熱膨脹係數(50~350℃)為32×10-7/℃,小於玻璃之平均熱膨脹係數。
於圖1(a)~圖1(c)中將對例1之玻璃(楊氏模數84GPa、熱膨脹率為39×10-7/℃)之基板進行計算所得之結果以等量線圖之形式進行表示。步驟1(圖1(b))中,由於為等向性之膜,故為同心圓狀之變形,步驟2(圖1(a))中,由於銅膜之異向性,故可見鞍型之變形。進而,可知步驟3(圖1(c))中,與步驟2相比,變形減小。
圖2係利用上述方法計算假定情形時之氮化矽膜成膜後之基板之翹曲的最大值並進行繪製而成者,該假定情形係將例1~12之玻璃用作基板尺寸G6(長邊1800mm、短邊1500mm)、厚度0.5mm之玻璃基板,於其上形成有膜厚200nm、寬7μm、及間距70μm之於一方向上平行之相當於銅圖案之圖案、及覆蓋該銅圖案且以厚度200nm形成於玻璃基板整面之氮化矽膜的情形。圖2中,越往右上翹曲越小。越往左下翹曲越大。直線之右上部分為相當於20α+7E≧1300之部分。根據圖2可知,滿足本發明之要件之例1~4及7~12之玻璃之翹曲較小,
難以引起圖案偏差。另一方面,可認為未滿足玻璃組成及式(1)之例5、6之翹曲較大,圖案偏差變大。
已詳細且參照特定之實施態樣對本發明進行了說明,但對業者而言很明確,可不脫離本發明之精神及範圍而添加各種變更或修正。本申請案係基於2014年11月28日提出申請之日本專利申請案(日本專利特願2014-241601)者,其內容係作為參照併入本文中。
本發明之液晶顯示面板係藉由基板玻璃、配線金屬、介電體、及顯示面板之設計態樣之特定組合,而顯著地抑制圖案偏差。
Claims (20)
- 一種液晶顯示面板,其係主動矩陣驅動形式之液晶顯示面板,且該液晶顯示面板具備:無鹼玻璃之基板;包含金屬之配線膜,其於該無鹼玻璃之基板之至少一表面上形成;包含無機物質之絕緣膜,其於該配線膜之表面上形成,該配線膜之厚度為0.1μm以上,該絕緣膜之厚度為100nm以上,該基板之長邊為1800mm以上、短邊為1500mm以上、厚度為0.5mm以下,該金屬之於室溫下之楊氏模數與熱膨脹係數之乘積為10,000×10-7GPa/℃~25,000×10-7GPa/℃,該無機物質具有小於該無鹼玻璃之平均熱膨脹係數(50℃~350℃),該無鹼玻璃之楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)於式(1)中,α之單位為10-7(1/℃),E之單位為GPa,且以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~12.8、B2O3 1.2~未達3.0、 MgO 2~10、CaO 3~11、SrO 0.1~10、BaO 0~5、ZrO2 0~2、Al2O3×MgO/(MgO+CaO+SrO+BaO)為5.5以上。
- 一種液晶顯示面板,其係主動矩陣驅動形式之液晶顯示面板,且該液晶顯示面板具備:無鹼玻璃之基板;包含金屬之配線膜,其於該無鹼玻璃之基板之至少一表面上形成;包含無機物質之絕緣膜,其於該配線膜之表面上形成,該配線膜之厚度為0.1μm以上,該絕緣膜之厚度為100nm以上,該基板之長邊為1800mm以上、短邊為1500mm以上、厚度為0.5mm以下,該金屬之於室溫下之楊氏模數與熱膨脹係數之乘積為10,000×10-7GPa/℃~25,000×10-7GPa/℃,該無機物質具有小於該無鹼玻璃之平均熱膨脹係數(50℃~350℃),該無鹼玻璃之楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)於式(1)中,α之單位為10-7(1/℃),E之單位為GPa,且以氧化物基準之莫耳%計具有下述組成, SiO2 66~74、Al2O3 10~15、B2O3 0.1~1.5、MgO 2~12、CaO 5.8~11、SrO 0~4.0、BaO 0~5、ZrO2 0~2、MgO/(MgO+SrO)為0.69以上。
- 一種液晶顯示面板,其係主動矩陣驅動形式之液晶顯示面板,且該液晶顯示面板具備:無鹼玻璃之基板;包含金屬之配線膜,其於該無鹼玻璃之基板之至少一表面上形成;包含無機物質之絕緣膜,其於該配線膜之表面上形成,該配線膜之厚度為0.1μm以上,該絕緣膜之厚度為100nm以上,該基板之長邊為1800mm以上、短邊為1500mm以上、厚度為0.5mm以下,該金屬之於室溫下之楊氏模數與熱膨脹係數之乘積為10,000×10-7GPa/℃~25,000×10-7GPa/℃,該無機物質具有小於該無鹼玻璃之平均熱膨脹係數(50℃~350℃),該無鹼玻璃之楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1) 於式(1)中,α之單位為10-7(1/℃),E之單位為GPa,且以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~15、B2O3 0.1~5、MgO 2~12、CaO 7~11、SrO 0~2.0、BaO 0~1.0、ZrO2 0~2。
- 如請求項3之液晶顯示面板,其中上述無鹼玻璃之以氧化物基準之莫耳%表示之組成滿足MgO/(MgO+SrO)為0.83以上之關係。
- 一種液晶顯示面板,其係主動矩陣驅動形式之液晶顯示面板,且該液晶顯示面板具備:無鹼玻璃之基板;包含金屬之配線膜,其於該無鹼玻璃之基板之至少一表面上形成;包含無機物質之絕緣膜,其於該配線膜之表面上形成,該配線膜之厚度為0.1μm以上,該絕緣膜之厚度為100nm以上,該基板之長邊為1800mm以上、短邊為1500mm以上、厚度為0.5mm以下,該金屬之於室溫下之楊氏模數與熱膨脹係數之乘積為10,000×10-7GPa/℃~25,000×10-7GPa/℃,該無機物質具有小於該無鹼玻璃之平均熱膨脹係數(50℃~350 ℃),該無鹼玻璃之楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)於式(1)中,α之單位為10-7(1/℃),E之單位為GPa,且以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~15、B2O3 0.1~5、MgO 2~12、CaO 3~11、SrO 0~4.0、BaO 0~5、ZrO2 0~2、MgO+CaO+SrO+BaO為19.0以上。
- 一種液晶顯示面板,其係主動矩陣驅動形式之液晶顯示面板,且該液晶顯示面板具備:無鹼玻璃之基板;包含金屬之配線膜,其於該無鹼玻璃之基板之至少一表面上形成;包含無機物質之絕緣膜,其於該配線膜之表面上形成,該配線膜之厚度為0.1μm以上,該絕緣膜之厚度為100nm以上,該基板之長邊為1800mm以上、短邊為1500mm以上、厚度為0.5mm以下, 該金屬之於室溫下之楊氏模數與熱膨脹係數之乘積為10,000×10-7GPa/℃~25,000×10-7GPa/℃,該無機物質具有小於該無鹼玻璃之平均熱膨脹係數(50℃~350℃),該無鹼玻璃之楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)於式(1)中,α之單位為10-7(1/℃),E之單位為GPa,且以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~15、B2O3 0.1~5、MgO 2~12、CaO 3.0~11、SrO 0~4.0、BaO 0~5、ZrO2 0~2、MgO/(MgO+CaO)為0.60以下。
- 如請求項6之液晶顯示面板,其中上述無鹼玻璃之以氧化物基準之莫耳%表示之組成滿足Al2O3×(MgO/(MgO+CaO+SrO+BaO))為6.3以下之關係。
- 如請求項6之液晶顯示面板,其中上述無鹼玻璃之以氧化物基準之莫耳%表示之組成滿足MgO/(MgO+SrO)為0.69以上之關係。
- 如請求項1至8中任一項之液晶顯示面板,其中上述無鹼玻璃之以氧化物基準之莫耳%表示之組成滿足759-13.1×SiO2- 7.5×Al2O3-15.5×B2O3+9.7×MgO+21.8×CaO+27.2×SrO+27.9×BaO≧0之關係。
- 如請求項1至8中任一項之液晶顯示面板,其中該金屬為銅、鋁、或鉬。
- 如請求項1至8中任一項之液晶顯示面板,其中該無機物質為氮化矽、氮氧化矽或氧化矽。
- 如請求項1至8中任一項之液晶顯示面板,其中上述液晶顯示面板之製造製程之最高溫度為450℃以下。
- 一種無鹼玻璃之基板,其以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~12.8、B2O3 1.2~未達3.0、MgO 2~10、CaO 3~11、SrO 0.1~10、BaO 0~5、ZrO2 0~2,且Al2O3×MgO/(MgO+CaO+SrO+BaO)為5.5以上,楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)於式(1)中,α之單位為10-7(1/℃),E之單位為GPa。
- 一種無鹼玻璃之基板,其以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、 Al2O3 10~15、B2O3 0.1~1.5、MgO 2~12、CaO 5.8~11、SrO 0~4.0、BaO 0~5、ZrO2 0~2,且MgO/(MgO+SrO)為0.69以上,楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)於式(1)中,α之單位為10-7(1/℃),E之單位為GPa。
- 一種無鹼玻璃之基板,其以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~15、B2O3 0.1~5、MgO 2~12、CaO 7~11、SrO 0~2.0、BaO 0~1.0、ZrO2 0~2,且楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)於式(1)中,α之單位為10-7(1/℃),E之單位為GPa。
- 如請求項15之無鹼玻璃之基板,其以氧化物基準之莫耳%表示之組成滿足MgO/(MgO+SrO)為0.83以上之關係。
- 一種無鹼玻璃之基板,其以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~15、B2O3 0.1~5、MgO 2~12、CaO 3~11、SrO 0~4.0、BaO 0~5、ZrO2 0~2,且MgO+CaO+SrO+BaO為19.0以上,楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)於式(1)中,α之單位為10-7(1/℃),E之單位為GPa。
- 一種無鹼玻璃之基板,其以氧化物基準之莫耳%計具有下述組成,SiO2 66~74、Al2O3 10~15、B2O3 0.1~5、MgO 2~12、CaO 3.0~11、SrO 0~4.0、BaO 0~5、 ZrO2 0~2,且MgO/(MgO+CaO)為0.60以下,楊氏模數(E)為70~95GPa,50℃~350℃之平均熱膨脹係數(α)為32×10-7~45×10-7(1/℃),且滿足下述式(1),20α+7E≧1310 (1)於式(1)中,α之單位為10-7(1/℃),E之單位為GPa。
- 如請求項18之無鹼玻璃之基板,其以氧化物基準之莫耳%表示之組成滿足Al2O3×(MgO/(MgO+CaO+SrO+BaO))為6.3以下之關係。
- 如請求項18之無鹼玻璃之基板,其以氧化物基準之莫耳%表示之組成滿足MgO/(MgO+SrO)為0.69以上之關係。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014241601 | 2014-11-28 | ||
JP2014-241601 | 2014-11-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201625503A TW201625503A (zh) | 2016-07-16 |
TWI693201B true TWI693201B (zh) | 2020-05-11 |
Family
ID=56074497
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104139835A TWI693201B (zh) | 2014-11-28 | 2015-11-27 | 液晶顯示面板 |
TW108129622A TWI766182B (zh) | 2014-11-28 | 2015-11-27 | 液晶顯示面板 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108129622A TWI766182B (zh) | 2014-11-28 | 2015-11-27 | 液晶顯示面板 |
Country Status (6)
Country | Link |
---|---|
US (5) | US10386686B2 (zh) |
JP (6) | JPWO2016084952A1 (zh) |
KR (2) | KR20230148860A (zh) |
CN (1) | CN107003553B (zh) |
TW (2) | TWI693201B (zh) |
WO (1) | WO2016084952A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102180841B1 (ko) * | 2016-12-21 | 2020-11-19 | 주식회사 엘지화학 | 곡면 접합 유리의 제조 방법 및 곡면 접합 유리 |
KR20230165865A (ko) * | 2016-12-28 | 2023-12-05 | 니폰 덴키 가라스 가부시키가이샤 | 유리 |
KR101911621B1 (ko) * | 2017-02-27 | 2018-10-24 | 주식회사 엘지화학 | 접합 유리 및 접합 유리의 제조 방법 |
JP6497407B2 (ja) | 2017-03-31 | 2019-04-10 | Agc株式会社 | 無アルカリガラス基板 |
CN111886209A (zh) | 2018-03-20 | 2020-11-03 | Agc株式会社 | 玻璃基板、液晶天线和高频装置 |
JPWO2019181706A1 (ja) * | 2018-03-20 | 2021-03-25 | Agc株式会社 | 基板、液晶アンテナ及び高周波デバイス |
WO2019245777A1 (en) | 2018-06-19 | 2019-12-26 | Corning Incorporated | High strain point and high young's modulus glasses |
JP7478340B2 (ja) * | 2018-10-17 | 2024-05-07 | 日本電気硝子株式会社 | 無アルカリガラス板 |
EP3911612A4 (en) * | 2019-01-18 | 2022-11-23 | Corning Incorporated | LOW DIELECTRIC LOSS GLASS FOR ELECTRONIC DEVICES |
CN114040898A (zh) * | 2019-05-17 | 2022-02-11 | 康宁公司 | 具有铜膜的玻璃片及其制作方法 |
WO2023084979A1 (ja) * | 2021-11-10 | 2023-05-19 | 日本電気硝子株式会社 | 無アルカリガラス板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200507261A (en) * | 2003-04-11 | 2005-02-16 | Applied Materials Inc | A method to form metal lines using selective electrochemical deposition |
TW201408433A (zh) * | 2012-06-05 | 2014-03-01 | Asahi Glass Co Ltd | 玻璃基板之最終研磨方法及以該方法經最終研磨之無鹼玻璃基板 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4534282B2 (ja) | 1999-12-14 | 2010-09-01 | 旭硝子株式会社 | 液晶ディスプレイ基板用ガラス |
JP2002308643A (ja) | 2001-02-01 | 2002-10-23 | Nippon Electric Glass Co Ltd | 無アルカリガラス及びディスプレイ用ガラス基板 |
JP4737709B2 (ja) * | 2004-03-22 | 2011-08-03 | 日本電気硝子株式会社 | ディスプレイ基板用ガラスの製造方法 |
JP5252771B2 (ja) * | 2005-06-15 | 2013-07-31 | Hoya株式会社 | 無アルカリガラス、その製造方法および液晶表示装置のtft形成用ガラス基板 |
KR101230987B1 (ko) * | 2005-12-16 | 2013-02-07 | 니폰 덴키 가라스 가부시키가이샤 | 무 알칼리 유리기판 및 그 제조방법 |
CN103172259B (zh) * | 2006-02-10 | 2015-10-21 | 康宁股份有限公司 | 具有高的热稳定性和化学稳定性的玻璃组合物及其制备方法 |
KR101037988B1 (ko) * | 2006-05-25 | 2011-05-30 | 니폰 덴키 가라스 가부시키가이샤 | 무알칼리 유리 및 무알칼리 유리 기판 |
JP2010118409A (ja) | 2008-11-11 | 2010-05-27 | Ulvac Japan Ltd | レーザアニール装置及びレーザアニール方法 |
JP5712922B2 (ja) | 2009-07-02 | 2015-05-07 | 旭硝子株式会社 | 無アルカリガラスおよびその製造方法 |
US8598056B2 (en) * | 2010-10-06 | 2013-12-03 | Corning Incorporated | Alkali-free glass compositions having high thermal and chemical stability |
KR101752033B1 (ko) * | 2010-12-07 | 2017-06-28 | 아사히 가라스 가부시키가이샤 | 무알칼리 유리 및 무알칼리 유리의 제조 방법 |
WO2013065489A1 (ja) * | 2011-10-31 | 2013-05-10 | 旭硝子株式会社 | ガラス基板およびその製造方法 |
WO2013129368A1 (ja) * | 2012-02-27 | 2013-09-06 | 旭硝子株式会社 | 無アルカリガラスの製造方法 |
KR101555458B1 (ko) | 2012-04-27 | 2015-09-23 | 아사히 가라스 가부시키가이샤 | 무알칼리 유리 및 그의 제조 방법 |
KR102618754B1 (ko) | 2012-06-05 | 2023-12-29 | 에이지씨 가부시키가이샤 | 무알칼리 유리 및 그 제조 방법 |
JP2013253309A (ja) | 2012-06-08 | 2013-12-19 | Sh Copper Products Co Ltd | Cu−Mn合金スパッタリングターゲット材、それを用いた半導体素子の積層配線及び積層配線の製造方法 |
JP6187475B2 (ja) | 2012-12-05 | 2017-08-30 | 旭硝子株式会社 | 無アルカリガラス基板 |
JP6037117B2 (ja) | 2012-12-14 | 2016-11-30 | 日本電気硝子株式会社 | ガラス及びガラス基板 |
EP2935134B1 (en) * | 2012-12-21 | 2019-01-16 | Corning Incorporated | Glass with improved total pitch stability |
JP5782058B2 (ja) | 2013-02-21 | 2015-09-24 | AvanStrate株式会社 | ガラスシートの製造方法、ガラスシート製造装置、及びガラス積層体 |
CN105992749B (zh) * | 2013-11-28 | 2020-11-03 | Agc株式会社 | 无碱玻璃基板及无碱玻璃基板的减薄方法 |
-
2015
- 2015-11-27 CN CN201580064686.3A patent/CN107003553B/zh active Active
- 2015-11-27 TW TW104139835A patent/TWI693201B/zh active
- 2015-11-27 KR KR1020237035340A patent/KR20230148860A/ko not_active Application Discontinuation
- 2015-11-27 WO PCT/JP2015/083464 patent/WO2016084952A1/ja active Application Filing
- 2015-11-27 TW TW108129622A patent/TWI766182B/zh active
- 2015-11-27 JP JP2016561965A patent/JPWO2016084952A1/ja active Pending
- 2015-11-27 KR KR1020177014083A patent/KR20170086529A/ko active Application Filing
-
2017
- 2017-05-25 US US15/605,235 patent/US10386686B2/en active Active
-
2019
- 2019-06-27 US US16/454,858 patent/US11586084B2/en active Active
- 2019-07-04 JP JP2019125095A patent/JP2019219663A/ja active Pending
- 2019-10-23 JP JP2019192754A patent/JP2020034928A/ja active Pending
- 2019-10-23 JP JP2019192753A patent/JP2020076985A/ja active Pending
-
2021
- 2021-04-09 JP JP2021066554A patent/JP7188487B2/ja active Active
-
2022
- 2022-11-30 JP JP2022191502A patent/JP7496051B2/ja active Active
- 2022-12-29 US US18/147,767 patent/US20230142463A1/en not_active Abandoned
- 2022-12-29 US US18/147,787 patent/US20230140716A1/en not_active Abandoned
-
2024
- 2024-02-06 US US18/433,510 patent/US20240176198A1/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200507261A (en) * | 2003-04-11 | 2005-02-16 | Applied Materials Inc | A method to form metal lines using selective electrochemical deposition |
TW201408433A (zh) * | 2012-06-05 | 2014-03-01 | Asahi Glass Co Ltd | 玻璃基板之最終研磨方法及以該方法經最終研磨之無鹼玻璃基板 |
Also Published As
Publication number | Publication date |
---|---|
US20190317376A1 (en) | 2019-10-17 |
TWI766182B (zh) | 2022-06-01 |
KR20170086529A (ko) | 2017-07-26 |
JP2020034928A (ja) | 2020-03-05 |
WO2016084952A1 (ja) | 2016-06-02 |
US10386686B2 (en) | 2019-08-20 |
JP2023036599A (ja) | 2023-03-14 |
CN107003553A (zh) | 2017-08-01 |
US20240176198A1 (en) | 2024-05-30 |
JPWO2016084952A1 (ja) | 2017-10-05 |
JP7496051B2 (ja) | 2024-06-06 |
CN107003553B (zh) | 2020-10-27 |
JP7188487B2 (ja) | 2022-12-13 |
US20230142463A1 (en) | 2023-05-11 |
TW201625503A (zh) | 2016-07-16 |
KR20230148860A (ko) | 2023-10-25 |
TW201940454A (zh) | 2019-10-16 |
JP2020076985A (ja) | 2020-05-21 |
JP2021130604A (ja) | 2021-09-09 |
US11586084B2 (en) | 2023-02-21 |
US20230140716A1 (en) | 2023-05-04 |
JP2019219663A (ja) | 2019-12-26 |
US20170329192A1 (en) | 2017-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI693201B (zh) | 液晶顯示面板 | |
US9321671B2 (en) | Glass substrate for flat panel display and manufacturing method thereof | |
US9580352B2 (en) | Glass substrate for flat panel display and method for manufacturing same | |
KR101639226B1 (ko) | 유리 및 유리 기판 | |
TWI687382B (zh) | 顯示器用玻璃基板及其製造方法 | |
JP5702888B2 (ja) | 無アルカリガラスおよびその製造方法 | |
TWI543953B (zh) | 無鹼玻璃 | |
WO2013183626A1 (ja) | 無アルカリガラスおよびその製造方法 | |
TWI477459B (zh) | 平板顯示器用玻璃基板之製造方法 | |
JP2013212943A (ja) | フラットパネルディスプレイ用ガラス基板の製造方法 | |
JPWO2017002807A1 (ja) | ディスプレイ用ガラス基板およびその製造方法 | |
WO2014208521A1 (ja) | 無アルカリガラス | |
TWI450870B (zh) | E-glass substrate and its manufacturing method |