TWI692046B - 消耗品用感測器及調整器 - Google Patents

消耗品用感測器及調整器 Download PDF

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TWI692046B
TWI692046B TW105107506A TW105107506A TWI692046B TW I692046 B TWI692046 B TW I692046B TW 105107506 A TW105107506 A TW 105107506A TW 105107506 A TW105107506 A TW 105107506A TW I692046 B TWI692046 B TW I692046B
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edge ring
computer
processing chamber
piezoelectric transducer
voltage
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TW201717299A (zh
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意恩 肯沃西
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美商蘭姆研究公司
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Abstract

提出一種使用在處理腔室中之設備。一消耗品在該處理腔室中。一秤係設置以測量該消耗品之質量。

Description

消耗品用感測器及調整器
本揭露內容係關於半導體元件之製造。具體而言，本揭露內容係關於在具有消耗性零件之處理腔室中之半導體元件之製造。
在半導體元件之製造中，可能在處理腔室中處理半導體。某些處理腔室具有消耗性零件。例如，蝕刻腔室可能具有消耗性邊緣環，其隨著時間被蝕刻。其它處理腔室可能具有消耗品，隨著時間在其上沉積著層。
本文所揭露的是各種實施例，包括一表現形式，其中提供了用於處理腔室中之裝置。消耗品係位於處理腔室中。秤係設置以測量該消耗品之質量。
在另一表現形式中，提供一方法。測量在處理腔室中之至少一消耗品之質量。使用該處理腔室。測量該至少一消耗品之質量之改變。根據該至少一消耗品之所測得的質量之改變，調節該至少一消耗品。
在另一表現形式中，提供一裝置。提供一電漿處理腔室。在處理腔室中提供一消耗品。壓電轉換器係設置以測量該消耗品之質量並且做為用於移動該消耗品之致動器。控制器係電連接至該壓電轉換器，其中該控制器包括至少一CPU以及電連接至該至少一CPU之電腦可讀媒體。該電腦可讀媒體包括：用 以測量之電腦可讀碼，用以測量來自該壓電轉換器之電壓或電流；用以判定之電腦可讀碼，用以從所測得的電壓或電流以判定施加電壓或電流；及用以施加之電腦可讀碼，用以施加經判定的施加電壓或電流於壓電轉換器，其中所施加的經判定的施加電壓或電流使該消耗品在處理腔室中移動。
這些及其它特徵將在以下的實施方式中伴隨著圖式更詳細地加以說明。
100:電漿處理腔室
102:電漿反應器
104:電漿處理侷限腔室
106:電漿電源
108:匹配網路
110:TCP線圈
112:功率窗
114:電漿
116:晶圓偏壓電源
118:匹配網路
120:電極
124:控制器
130:氣體源/氣體供應機構
140:氣體注入器
142:壓力控制閥
144:泵
160:邊緣環
164:基板
168:秤桿
172:秤
204:導線
208:頂部表面
304:步驟
308:步驟
312:步驟
316:步驟
324:步驟
328:步驟
332:步驟
400:蝕刻反應器
402:C形護罩
404:基板
406:氣體分配板
408:夾盤
424:氣體源
435:控制器
448:ESC源
449:蝕刻腔室
450:腔室壁
460:秤
462:懸桿
464:處理環
600:電腦系統
602:處理器
604:電子顯示裝置
606:主記憶體
608:儲存裝置
610:可移動儲存裝置
612:使用者介面裝置
614:通訊介面
616:通訊基礎架構
在伴隨的圖式中，以範例的方式(而非限制的方式)說明所揭露的發明，其中類似的元件符號表示類似的元件，其中：
圖1概要地說明電漿處理腔室之一範例之橫剖面圖，其可使用在一實施例中。
圖2A-C為邊緣環、基板、電極、秤及秤桿之部分之橫剖面之放大概要圖。
圖3為一實施例之高階流程圖。
圖4為使用在另一實施例中之處理腔室之橫剖面圖。
圖5為處理環之放大底視圖。
圖6為顯示一電腦系統之高階方塊圖，該電腦系統適合用來實施一控制器。
現在將詳細地敘述實施例，並且參考隨附圖式中所述的幾個實施例。在以下敘述中，特定細節被提出以提供對於本發明之徹底了解。然而，本 揭露內容可在沒有這些特定細節之部分或全部之情況下加以實施，且本揭露內容包含根據此技術領域中之通常知識可做出之變化。熟知的處理步驟及/或結構並未詳細地描述，以免不必要地混淆本揭露內容。
為了幫助了解，圖1概要地說明電漿處理腔室100之一範例之橫剖面圖，其可使用在一實施例中。電漿處理腔室100包括電漿反應器102，電漿反應器102中具有電漿處理侷限腔室104。電漿電源106，由匹配網路108所調整，供應電力至位於功率窗112附近之TCP線圈110，以藉由提供一感應耦合功率而在電漿處理侷限腔室104中產生電漿114。TCP線圈(上功率源)110可用以在電漿處理侷限腔室104內產生均勻的散佈輪廓。例如，TCP線圈110可用以在電漿114中產生環形的功率分佈。提供功率窗112以將TCP線圈110與電漿處理侷限腔室104隔開，同時允許能量從TCP線圈110傳遞至電漿處理侷限腔室104。由匹配網路118所調整之晶圓偏壓電源116提供電力至電極120，以設定由電極120所支撐之基板164上之偏壓。
電漿電源106及晶圓偏壓電源116可用以操作於特定的射頻，例如，13.56MHz、27MHz、2MHz、60MHz、400kHz、2.54GHz或其組合。電漿電源106及晶圓偏壓電源116可製做成適當的尺寸以供應一電力範圍以達成想要的處理效能。例如，在本發明之一實施例中，電漿電源106可供應在50至5000瓦特之範圍中之功率，晶圓偏壓電源116可供應在20至2000伏特之範圍中之偏壓。此外，TCP線圈110及/或電極120可由二或更多次線圈或次電極所組成，其可由單一電源或複數電源來供電。
如圖1所示，電漿處理腔室100更包括氣體源/氣體供應機構130。氣體源130係經由氣體入口(例如，氣體注入器140)而流體連接至電漿處理侷限腔室104。氣體注入器140可位在電漿處理侷限腔室104中之任何有利的位置，並且可採取任何用以注入氣體之形式。然而，較佳地，氣體入口可用以產生「可 調整的」(tunable)氣體注入輪廓，其允許獨立地調整氣體之個別流動至電漿處理侷限腔室104中之多個區域。處理氣體及副產物係藉由壓力控制閥142及泵144而從電漿處理侷限腔室104移除，壓力控制閥142及泵144亦用來維持在電漿處理侷限腔室104中之特定壓力。在處理期間，壓力控制閥142可維持小於1Torr之壓力。邊緣環160係放置在基板164周圍。來自Lam Research Corp.of Fremont,CA之Kiyo可用於實行一實施例。在此實施例中，秤172係放置在邊緣環160之下。秤桿168係放置在秤172與邊緣環160之間。控制器124係可控制地連接至氣體源130、電漿電源106、晶圓偏壓電源116及秤172。
圖2A為邊緣環160、基板164、電極120、秤172及秤桿168之部分之橫剖面之放大概要圖。在此實施例中，秤172為壓電轉換器，其利用無線連接或連接於秤172與控制器124之間之至少一導線204而電連接至控制器124。在此範例中，為了造成邊緣環之移動，控制器124施加一電壓穿過導線204至秤172。施加至秤172之電壓或遍及秤172之電荷造成秤172施加一力至秤桿且因此至邊緣環160。當該力大於邊緣環160之重量時，邊緣環將向上移動。當該力相等時，邊緣環保持不動/停止。當使用做為秤時，該系統是反轉的。控制器124取得來自秤172之電訊號，其與邊緣環160之新重量成比例。因此，壓電轉換器做為秤172(對邊緣環160之至少部分進行稱重)及致動器(移動邊緣環160之該至少部分)兩者。
圖3為一實施例之高階流程圖。秤係用於測量消耗品之質量(步驟304)。在此範例中，電漿處理侷限腔室104係用於蝕刻。因此，邊緣環160是消耗性的，其被蝕刻掉且必須定期更換。使用該處理腔室(步驟308)。在此範例中，蝕刻腔室係用於蝕刻基板。測量消耗品之質量之改變(步驟312)。在此範例中，邊緣環160之頂部被蝕刻掉。圖2B為邊緣環160之部分之放大橫剖面圖，其係在邊緣環160之頂部之部分已經被蝕刻掉之後，留下不平整的頂部表面 208。邊緣環160之頂部之部分被蝕刻掉會造成邊緣環160之質量之改變，其改變了在秤桿168上之力，其改變了秤桿168施加於秤172之力。力之改變允許秤172測量邊緣環160之重量或質量之改變。
控制器124使用所測得的質量之改變以判定消耗品是否需要被調節(步驟316)。若不需要調節，則程序回到使用處理腔室之步驟(步驟308)，並且繼續程序。若需要調節，則控制器124可判定是否需要更換該消耗品(步驟324)。若控制器124判定該消耗品為待更換，則移除該邊緣環160並且提供一新的邊緣環(步驟328)。接著，該處理回到步驟304，以測量新的邊緣環之質量(步驟304)。當邊緣環之質量低於一臨界質量時，控制器124可判定邊緣環應該被更換。若控制器124判定不更換邊緣環160，則調節該消耗品(步驟332)。在此範例中，藉由移動邊緣環160以完成邊緣環160之調節。
圖2C為邊緣環160之部分之放大橫剖面圖，其係在部分已經被調節之後。在此範例中，由控制器124經由導線204所施加的較高電壓增加了秤172上之電荷，該秤172為壓電轉換器。壓電轉換器增加了施加至秤桿168之力，其使邊緣環160抬高。程序回到使用處理腔室之步驟(步驟308)，並且繼續程序。
邊緣環圍繞著電極(其可為陶瓷靜電夾盤，ESC)，並且產生一特別調整的「容室」(pocket)在晶圓表面之下、之周圍及延伸於之上。經由仔細地選擇邊緣環直徑、高度、階部、半徑及角度(在其它參數中)以進行容室之調整。邊緣環是消耗性的物品，並且被電漿所侵蝕及變形。最終邊緣環變得如此耗損以致於它不再能適當地調整。此時，腔室之處理效果下降而超出規格，且需要更換邊緣環。邊緣環之更換需要打開腔室，其打斷了客戶的生產力。
此實施例提供一系統，可原位地(in-situ)調整邊緣環以補償其耗損。該系統具有兩部分。一部分必須能夠偵測邊緣環已經耗損了多少。另一部 分必須能夠根據該邊緣環耗損了多少而調整它。此實施例提供一方式以在一小型單元中完成移動及感測。
在此範例中，壓電轉換器被用於進行移動及感測兩者。壓電致動器為電對機械的轉換器。它們接收電訊號並且將它轉換為非常細微、非常小、非常精確的機械運動。此運動係由致動器所施加之力所引起。此設計接著「反轉」該致動器，並且接收力及輸出電流/電壓，而不是接收電流/電壓及輸出力。該力為邊緣環之重量，其產生與該重量成比例之電流/電壓。電流/電壓之改變將是重量之改變。重量之改變將被校準至邊緣環耗損，且此系統將知道基於該讀值而移動邊緣環多少。
邊緣環若為單一件，將被二或更多(可能是三或四)壓電轉換器垂直地移動。從邊緣環下方，轉換器將向上推該環以移動它，並且測量其重量之改變以分析其耗損。
這樣的系統改善了使用雷射及鏡以測量邊緣環之蝕刻之系統。使用雷射及鏡之系統是龐大的，且對於併入處理腔室中不是理想的。這樣的系統也需要用於雷射訊號進出腔室之通路。此需要在敏感的位置中之另外的窗及密封件。
上述的範例進一步改善了雷射及鏡系統，其中上述的範例藉由節省空間、需要很少的真空導引、及與現存的處理腔室硬體不衝突而解決了問題。藉由使用現存的硬體及壓電致動器，上述的實施例解決了數個組裝、熱及RF訊號的問題，以進行邊緣環條件之分析。
一較佳實行例使用壓電轉換器，該壓電轉換器施加力以調整邊緣環位置並且也感測重量改變，以判定所需的調整量。另一設計將使用氣動轉換器。該氣動轉換器將壓力轉變為一力以移動該邊緣環。接著，致動器將轉換以感測 邊緣環之重量改變，並且輸出一壓力，該壓力將告訴工具要調整該邊緣環之位置多少。
圖4為在另一實施例中之處理腔室之橫剖面圖。蝕刻反應器400包括提供氣體入口之氣體分配板406及夾盤408，在蝕刻腔室449中，由腔室壁450所包圍。在蝕刻腔室449中，其上形成著堆疊之基板404被放置在夾盤408之頂部上。夾盤408可提供來自ESC源448之偏壓而做為靜電夾盤(ESC)以用於固持基板404或可使用另外的夾持力以固持基板404。氣體源424係經由氣體分配板406而連接至蝕刻腔室449。電漿侷限護罩(在此實施例中，其為C形護罩402)圍繞著電漿容積。在此範例中，使用電容耦合以產生電漿。這樣的系統之一範例為來自Lam Research Corp.of Fremont,CA之Flex。在此範例中，複數秤460係設置在氣體分配板406上。該複數秤460之每一者係附接至複數懸桿(hanger)462之一者。該複數懸桿之每一者係連接至處理環464。在此範例中，秤460可包括壓電轉換器，其係電連接至控制器。
圖5為處理環464之放大底視圖。在此範例中，處理環464係分成四分段。每一分段係連接至該複數懸桿462其中之二懸桿。在此範例中，使用該複數懸桿462之張力以測量處理環464之質量，而不是使用壓縮力以測量處理環464之質量。此外，可使用每一分段之質量，而不是測量整個處理環464之質量。在此實施例中，沉積物可能形成在處理環464上。因此，在此實施例中，處理環之調節可藉由對處理環實施沉積物移除步驟做為消耗品之調節之部分。在相同或另一實施例中，處理環464之該等分段可能被抬高或降低做為消耗品之調節之部分(步驟332)。在這樣的移動中，一分段之質量可能造成該分段之抬高或降低。在另一範例中，一分段之質量可能造成另一分段之抬高或降低。在這樣的實施例中，一分段之質量可用於判定在另一分段周圍之腔室之區域所需之補償。
圖6為顯示電腦系統600之高階方塊圖，該電腦系統600適合用來實施在實施例中所使用之控制器435。電腦系統可具有許多實體形式，其範圍從積體電路、印刷電路板、小型手持裝置到巨型超級電腦。電腦系統600包括一或更多處理器602，進一步可包括電子顯示裝置604(用以顯示圖形、文字、及其它資料)、主記憶體606(例如，隨機存取記憶體(RAM))、儲存裝置608(例如，硬碟機)、可移動儲存裝置610(例如，光學磁碟機)、使用者介面裝置612(例如，鍵盤、觸控螢幕、小鍵盤、滑鼠、或其他指向裝置等)、以及通訊介面614(例如，無線網路介面)。通訊介面614使軟體及資料可經由一線路在電腦系統600和外部裝置之間傳輸。該系統亦可包括與前述裝置/模組相連接之通訊基礎架構616(例如，通訊匯流排、交越條(cross-over bar)或網路)。
透過通訊介面614所傳輸之資訊，可能為例如電子、電磁、光學之訊號形式或其它能透過可傳輸訊號之通訊線路所傳輸、且為通訊介面614所接收之訊號形式，前述通訊線路可使用電線或電纜、光纖、電話線、行動電話線路、無線電頻率線路、及/或其它通訊管道加以實施。利用這樣的通訊介面，一或更多處理器602在執行前述方法步驟時，可接收來自網路之資訊，或可輸出資訊至該網路。再者，方法實施例可完全依靠處理器執行，或是可透過網路(例如網際網路)結合分擔部份處理的遠端處理器而執行。
用語「非暫態電腦可讀媒體」(non-transient computer readable medium)一詞，普遍用於指例如主記憶體、輔助記憶體、可移動儲存裝置，例如硬碟等儲存裝置、快閃記憶體、磁碟機記憶體、CD-ROM及其它形式的永久記憶體之媒體，且不應用以涵蓋暫時性之內容，例如載波或訊號。電腦碼的範例包括例如由編譯器產生之機器碼、以及含有較高階編碼、使用直譯器由電腦所執行之檔案。電腦可讀媒體亦可能是體現於載波之電腦資料訊號所傳送之電腦碼，且該電腦碼代表可由處理器執行之一連串指令。
在一實施例中，在儲存裝置608中之電腦可讀碼使得壓電轉換器能夠做為秤。這樣的軟體可首先測量在壓電轉換器上之電壓或電荷。接著這樣的軟體使所測得的電壓或電荷與質量互相關聯。這樣的關聯可表示為函數或可藉由查詢表(lookup table)而提供。接著將提供經關聯的質量。在儲存裝置608中之電腦可讀碼亦可使壓電轉換器能夠做為致動器。這樣的軟體可使用經關聯的質量以判定想要的力、或被施加至處理環464之位移。接著該軟體將找出與相要的力或位移相關之電壓或電荷。該軟體接著施加所找出的電壓或電荷於壓電轉換器。
在另一實施例中，用於秤及致動器之軟體可以進一步被結合，其係藉由使用所測得的電壓或電荷以判定為了想要的位移之施加電壓或電荷以及判定是否必須移除消耗品。這樣的實施例仍具有秤及致動器，然而，更緊密的結合被使用，俾使質量未被計算，而是使用象徵著質量之電壓以判定是否需要致動或更換。使用電壓或電荷做為質量指示器，可能不判定最終的質量，而是使用質量指示器以判定一行動，其中這樣的行動係基於質量之改變，其反映在電壓之改變或電荷之改變，並且接著反映消耗品位置之改變。
藉由使用轉換器為秤及致動器兩者，減少了用來執行這兩個功能之設備之底面積。在不同的實施例中，可在使用腔室不同次數之後測量質量之改變。例如，可在處理每一晶圓之後測量質量，或可在處理100片晶圓之後測量質量。在上述實施例中，秤之提供係藉由壓電轉換器與相關的電子元件，例如控制器與提供質量測量之軟體。若沒有適當的軟體，壓電轉換器不能用於測量質量，此意味著這樣的壓電轉換器不是秤。這樣的電壓或電荷之改變接著用於判定用於想要的致動應施加之電壓或電荷。
本發明雖已透過數個較佳實施例加以說明，但仍有許多落於本發明範疇內之替換、變更及各種置換均等物。有許多實施本發明之方法及裝置的替 代性方式。因此欲使以下隨附請求項解釋為包含所有落於本發明之真正精神及範疇內的此替換、變更及各種置換均等物。
100‧‧‧電漿處理腔室
102‧‧‧電漿反應器
104‧‧‧電漿處理侷限腔室
106‧‧‧電漿電源
108‧‧‧匹配網路
110‧‧‧TCP線圈
112‧‧‧功率窗
114‧‧‧電漿
116‧‧‧晶圓偏壓電源
118‧‧‧匹配網路
120‧‧‧電極
124‧‧‧控制器
130‧‧‧氣體源/氣體供應機構
140‧‧‧氣體注入器
142‧‧‧壓力控制閥
144‧‧‧泵
160‧‧‧邊緣環
164‧‧‧基板
168‧‧‧秤桿
172‧‧‧秤

Claims (13)

  1. 一種使用在處理腔室中之設備，包括：一邊緣環，在該處理腔室中；及一壓電轉換器，配置以用作一秤且用作一致動器，該秤係設置以測量該邊緣環之質量，且該致動器用以根據藉由該秤所測得的質量而移動該邊緣環，其中由該壓電轉換器所測得的電流及電壓之其中一者係用於判定該質量，且施加電流及施加電壓之其中一者提供該致動器之移動。
  2. 如申請專利範圍第1項之使用在處理腔室中之設備，更包括：一控制器，電連接至該壓電轉換器。
  3. 如申請專利範圍第1項之使用在處理腔室中之設備，其中該處理腔室係一電漿處理腔室。
  4. 如申請專利範圍第1項之使用在處理腔室中之設備，其中該邊緣環包含分段的環。
  5. 如申請專利範圍第1項之使用在處理腔室中之設備，其中該秤更包括實體電腦可讀媒體，包括：用以測量之電腦可讀碼，用以測量來自該壓電轉換器之電壓；及用以使用之電腦可讀碼，用以使用該所測得的電壓做為質量指示器。
  6. 如申請專利範圍第5項之使用在處理腔室中之設備，其中該致動器更包括實體電腦可讀媒體，包括：用以判定之電腦可讀碼，用以判定該施加電壓；及用以施加之電腦可讀碼，用以施加經判定的該施加電壓於該壓電轉換器。
  7. 如申請專利範圍第1項之使用在處理腔室中之設備，更包括：一控制器，電連接至該壓電轉換器，其中該控制器包括：至少一CPU；及電腦可讀媒體，電連接至該至少一CPU，其中該電腦可讀媒體包括：用以測量之電腦可讀碼，用以測量來自該壓電轉換器之電壓或電流；用以判定之電腦可讀碼，用以從所測得的電壓或電流以判定一施加電壓或電流；及用以施加之電腦可讀碼，用以施加經判定的施加電壓或電流於該壓電轉換器，其中經判定的施加電壓或電流使該邊緣環在該處理腔室中移動。
  8. 一種使用在半導體處理中之方法，包括：藉由使用一壓電轉換器作為一秤而測量在一處理腔室中之至少一邊緣環之質量；使用該處理腔室；藉由使用該壓電轉換器作為一秤而測量該至少一邊緣環之質量之改變；及根據該至少一邊緣環之所測得的質量之改變，藉由使用該壓電轉換器作為一致動器而調節該至少一邊緣環。
  9. 如申請專利範圍第8項之使用在半導體處理中之方法，更包括：根據該至少一邊緣環之所測得的質量之改變，更換該至少一邊緣環。
  10. 如申請專利範圍第9項之使用在半導體處理中之方法，其中該調節該至少一邊緣環之步驟包括：移動該至少一邊緣環。
  11. 如申請專利範圍第8項之使用在半導體處理中之方法，其中該調節該至少一邊緣環之步驟包括：根據該至少一邊緣環之所測得的質量之改變，調整該至少一邊緣環之垂直高度。
  12. 如申請專利範圍第8項之使用在半導體處理中之方法，其中該測量該至少一邊緣環之質量之改變之步驟包括測量來自該壓電轉換器之電壓或電流，其中該調節該至少一邊緣環之步驟包括施加一電壓或電流至該壓電轉換器，其調整該至少一邊緣環之垂直高度。
  13. 一種使用在半導體處理中之設備，包括：一邊緣環，設置在一處理腔室中；一壓電轉換器，設置以測量該邊緣環之質量及做為一致動器以移動該邊緣環；一控制器，電連接至該壓電轉換器，其中該控制器包括：至少一CPU；及電腦可讀媒體，電連接至該至少一CPU，其中該電腦可讀媒體包括：用以測量之電腦可讀碼，用以測量來自該壓電轉換器之電壓或電流； 用以判定之電腦可讀碼，用以從所測得的電壓或電流以判定一施加電壓或電流；及用以施加之電腦可讀碼，用以施加經判定的施加電壓或電流於該壓電轉換器，其中經判定的施加電壓或電流使該邊緣環在該處理腔室中移動。
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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108369922B (zh) 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
KR20180033995A (ko) * 2016-09-27 2018-04-04 삼성전자주식회사 모니터링 유닛, 이를 포함하는 플라즈마 처리 장치 및 그를 이용한 반도체 칩의 제조 방법
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
WO2019022707A1 (en) * 2017-07-24 2019-01-31 Lam Research Corporation MOBILE RIBBON DESIGNS
US10510185B2 (en) 2017-08-25 2019-12-17 Advanced Micro Devices, Inc. Variable rate shading
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
CN109841536A (zh) * 2017-11-29 2019-06-04 长鑫存储技术有限公司 边缘补偿***、晶圆载台***及晶圆安装方法
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
WO2020180656A1 (en) * 2019-03-06 2020-09-10 Lam Research Corporation Measurement system to measure a thickness of an adjustable edge ring for a substrate processing system
US11279032B2 (en) 2019-04-11 2022-03-22 Applied Materials, Inc. Apparatus, systems, and methods for improved joint coordinate teaching accuracy of robots
WO2020214327A1 (en) * 2019-04-19 2020-10-22 Applied Materials, Inc. Ring removal from processing chamber
US12009236B2 (en) * 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
US10964584B2 (en) 2019-05-20 2021-03-30 Applied Materials, Inc. Process kit ring adaptor
US11626305B2 (en) 2019-06-25 2023-04-11 Applied Materials, Inc. Sensor-based correction of robot-held object
US11211269B2 (en) 2019-07-19 2021-12-28 Applied Materials, Inc. Multi-object capable loadlock system
US11443923B2 (en) * 2019-09-25 2022-09-13 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure
US11370114B2 (en) 2019-12-09 2022-06-28 Applied Materials, Inc. Autoteach enclosure system
USD954769S1 (en) 2020-06-02 2022-06-14 Applied Materials, Inc. Enclosure system shelf
USD980176S1 (en) 2020-06-02 2023-03-07 Applied Materials, Inc. Substrate processing system carrier
US11721569B2 (en) * 2021-06-18 2023-08-08 Applied Materials, Inc. Method and apparatus for determining a position of a ring within a process kit
JP7229444B1 (ja) * 2022-07-25 2023-02-27 三菱電機株式会社 プラズマ処理装置および劣化判定方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020072240A1 (en) * 2000-12-07 2002-06-13 Semiconductor Leading Edge Technologies, Inc. Plasma etching apparatus with focus ring and plasma etching method
US20040163478A1 (en) * 2003-02-25 2004-08-26 Palo Alto Research Center Incorporated Large dimension, flexible piezoelectric ceramic tapes and methods to make same
US20060216406A1 (en) * 2005-03-28 2006-09-28 Eric Hudson Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001135873A (ja) * 1999-11-08 2001-05-18 Minolta Co Ltd 圧電変換素子
US6579151B2 (en) * 2001-08-02 2003-06-17 Taiwan Semiconductor Manufacturing Co., Ltd Retaining ring with active edge-profile control by piezoelectric actuator/sensors
US7001482B2 (en) * 2003-11-12 2006-02-21 Tokyo Electron Limited Method and apparatus for improved focus ring
US7682985B2 (en) * 2004-03-17 2010-03-23 Lam Research Corporation Dual doped polysilicon and silicon germanium etch
JP2005340693A (ja) * 2004-05-31 2005-12-08 Nec Kansai Ltd プラズマエッチング装置
US7544270B2 (en) * 2005-11-14 2009-06-09 Infineon Technologies Ag Apparatus for processing a substrate
US20100139374A1 (en) * 2008-12-03 2010-06-10 Dermody Daniel L Methods for rheological testing of multiple samples and systems therefor
JP5657262B2 (ja) * 2009-03-27 2015-01-21 東京エレクトロン株式会社 プラズマ処理装置
CN102965632A (zh) * 2011-09-01 2013-03-13 上海华力微电子有限公司 用于物理气相沉积腔室的靶磁场强度稳定装置及其方法
CN102965623B (zh) * 2012-11-09 2015-07-01 沈阳黎明航空发动机(集团)有限责任公司 一种DZ125叶片表面NiCrAlYSi涂层的修复方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020072240A1 (en) * 2000-12-07 2002-06-13 Semiconductor Leading Edge Technologies, Inc. Plasma etching apparatus with focus ring and plasma etching method
US20040163478A1 (en) * 2003-02-25 2004-08-26 Palo Alto Research Center Incorporated Large dimension, flexible piezoelectric ceramic tapes and methods to make same
US20060216406A1 (en) * 2005-03-28 2006-09-28 Eric Hudson Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system

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