CN106684013A - 用于消耗品的传感器和调节器 - Google Patents
用于消耗品的传感器和调节器 Download PDFInfo
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Abstract
本发明涉及用于消耗品的传感器和调节器,提供了一种用于在处理室中使用的装置。消耗品位于处理室之内。秤被定位成测量所述消耗品的质量。
Description
技术领域
本公开涉及半导体器件的制造。更具体地,本公开涉及在具有可消耗的部件的处理室中半导体器件的制造。
背景技术
在半导体器件的制造中,半导体可以在处理室中进行处理。有些处理室具有可消耗的部件。例如蚀刻室可具有可消耗的边缘环,可消耗的边缘环随着时间的推移而被蚀刻。其它处理室可以具有消耗品(consumable),层随着时间的推移被沉积在该消耗品上。
发明内容
本文公开了包括表现形式的多种实施例,在该表现形式中,提供了用于在处理室中使用的装置。消耗品位于处理室内。秤(scale)被定位成测量所述消耗品的质量。
在另一表现形式中,提供了包括以下的方法。在处理室中的至少一个消耗品的质量被测量。使用处理室。测量所述至少一个消耗品的质量的变化。根据所测得的至少一个消耗品的质量的变化而调节所述至少一个消耗品。
在另一表现形式中,提供了一种装置。提供了一种等离子体处理室。消耗品被提供于该处理室中。压电换能器被定位成测量消耗品的质量,并充当移动所述消耗品的致动器。控制器电连接至所述压电换能器,其中所述控制器包括至少一个CPU和电连接到所述至少一个CPU的计算机可读介质。所述计算机可读介质包括用于从所述压电换能器测量电压或电流的计算机可读代码,用于从所测得的电压或电流确定所施加的电压或电流的计算机可读代码,和用于跨越压电换能器施加所确定的所施加的电压或电流的计算机可读代码,其中所施加的所确定的所施加的电压或电流在处理室内移动所述消耗品。
具体而言,本发明的一些方面可以描述如下:
1、一种在处理室中使用的装置,其包括:
位于所述处理室内的消耗品;和
被定位成测量所述消耗品的质量的秤。
2、如条款1所述的装置,还包括控制器,该控制器电连接至所述秤。
3、如条款2所述的装置,还包括用于基于由所述秤测得的质量移动所述消耗品的致动器。
4、如条款3所述的装置,其中所述秤包括压电换能器,其中从所述压电换能器测得的电流或电压被用于确定质量。
5、如条款4所述的装置,其中所述致动器还包括所述压电换能器,其中所施加的电流或电压造成所述致动器的移动。
6、如条款5所述的装置,其中所述处理室是等离子体处理室。
7、如条款6所述的装置,其中所述消耗品呈环形形状。
8、如条款7所述的装置,其中所述消耗品的环形形状是分段的环形形状。
9、如条款7所述的装置,其中所述消耗品是边缘环。
10、如条款9所述的装置,其中所述秤进一步包括有形的计算机可读介质,该有形的计算机可读介质包括:
用于从所述压电换能器测量电压的计算机可读代码;和
使用所测得的电压作为质量指示符的计算机可读代码。
11、如条款10所述的装置,其中所述致动器进一步包括有形的计算机可读介质,该有形的计算机可读介质包括:
用于确定所施加的电压的计算机可读代码;和
用于跨越所述压电换能器施加所确定的所施加的电压的计算机可读代码。
12、如条款2所述的装置,其中所述秤包括压电换能器,其中从所述压电换能器测得的电流或电压被用于确定质量。
13、如条款12所述的装置,其进一步包括:
电连接到所述压电换能器的控制器,其中所述控制器包括:
至少一个CPU;和
电连接到所述至少一个CPU的计算机可读介质,
其中所述计算机可读介质包括:
用于从所述压电换能器测量电压或电流的计算机可读代码;
用于从所测得的电压或电流确定所施加的电压或电流的计算机可读代码;和
用于跨越所述压电换能器施加所确定的所施加的电压或电流的计算机可读代码,其中所施加的所确定的所施加的电压或电流在所述处理室内移动所述消耗品。
14、一种方法,其包括:
测量在处理室中的至少一个消耗品的质量;
使用所述处理室;
测量所述至少一个消耗品的质量的变化;
根据所测得的所述至少一个消耗品的质量的变化,调节所述至少一个消耗品。
15、如条款14所述的方法,还包括根据所测得的所述至少一个消耗品的质量的变化替换所述至少一个消耗品。
16、如条款15所述的方法,其中调节所述至少一个消耗品包括移动所述至少一个消耗品。
17、如条款14所述的方法,其中调节所述至少一个消耗品包括根据所测得的所述至少一个消耗品的质量的变化调整所述至少一个消耗品的垂直高度。
18、如条款14所述的方法,其中测量所述至少一个消耗品的质量的变化包括从压电换能器测量电压或电流,并且其中所述调节所述至少一个消耗品包括施加电压或电流到所述压电换能器,从而调整所述至少一个消耗品的垂直高度。
19、一种装置,其包括:
等离子体处理室;
位于所述处理室内的消耗品;
压电换能器,其被定位成测量所述消耗品的质量并充当用于移动所述消耗品的致动器;
电连接到所述压电换能器的控制器,其中所述控制器包括:
至少一个CPU;和
电连接到所述至少一个CPU的计算机可读介质,
其中,所述计算机可读介质包括:
用于从所述压电换能器测量电压或电流的计算机可读代码;
用于从所测得的电压或电流确定所施加的电压或电流的计算机可读代码;和
用于跨越所述压电换能器施加所确定的所施加的电压或电流的计算机可读代码,其中所施加的所确定的所施加的电压或电流在所述处理室内移动所述消耗品。
这些和其它特征将在详细描述中并结合以下附图更详细地说明。
附图说明
本公开的发明在附图的图中通过举例的方式示出,而不是通过限制的方式示出,并且在附图中类似的附图标记指代相似的元件,并且其中:
图1示意性描述了可在实施例中使用的等离子体处理室的一示例的剖面图。
图2A-C是边缘环、衬底、电极、秤(scale)和秤杆(scale rod)的一部分的横截面的放大示意图。
图3是一实施例的高阶流程图。
图4是在另一实施例中使用的处理室的剖面图。
图5是处理环的放大仰视图。
图6是描述适于应用控制器的计算机***的高阶框图。
具体实施方式
实施例现在将参考一些如在附图中所示的本发明的实施例详细地说明。在以下的说明中,具体的细节被阐述以便提供对本发明的透彻理解。然而,本发明可以在没有这些具体细节中的一些或全部的情况下实施,并且本公开包括可以按照本技术领域中通常可用的知识作出的修改方案。公知的工艺步骤和/或结构没有详细描述以免不必要地模糊本公开。
为了便于理解,图1示意性描述了可在实施例中使用的等离子体处理室100的示例的剖面图。等离子体处理室100包括等离子体反应器102,等离子体反应器102内具有等离子体处理约束室104。等离子体电源106,通过匹配网络108调谐,提供功率到靠近功率窗112的TCP线圈110以通过提供感应耦合功率在等离子体处理约束室104中产生等离子体114。该TCP线圈(上电源)110可配置为在等离子处理约束室104内产生均匀扩散分布。例如,TCP线圈110可以被配置为在等离子体114中产生环形功率分布。功率窗112被提供以将TCP线圈110与等离子体处理约束室104分开,同时允许能量从TCP线圈110传送到等离子处理约束室104。通过匹配网络118调谐的晶片偏压电源116提供功率至电极120以在由电极120支撑的衬底164上设置偏置电压。
等离子体电源106和晶片偏压电源116可被配置成以特定的无线电频率运行,诸如,例如以13.56兆赫,27兆赫,2兆赫,60兆赫,400千赫,2.54千兆赫,或它们的组合运行。为达到预期的处理性能,等离子体电源106和晶片偏压电源116可被适当调整大小以提供功率范围。例如,在本发明的一个实施例中,等离子体电源106可提供在50到5000瓦的范围内的功率,晶片偏压电源116可提供在20到2000伏范围内的偏置电压。此外,TCP线圈110和/或电极120可以包含两个或两个以上的子线圈或子电极,子线圈或子电极可以由单一的电源供电或者由多个电源供电。
如图1所示,等离子体处理室100还包括气体源/气体供给机构130。气体源130与等离子体处理约束室104通过进气口,例如气体注入器140流体连接。气体注入器140可以位于等离子体处理约束室104内的任何有利的位置,并且可以采取任何注入气体的形式。然而,优选进气口可以被配置为产生“可调的”气体注入分布,从而使得能独立调节流到在等离子体处理约束室104中的多个区域的相应气流。工艺气体和副产物通过压力控制阀142和泵144从等离子体处理约束室104中被除去,压力控制阀142和泵144也用于维持等离子体处理约束室104内的特定压强。压力控制阀142在处理过程中可保持低于1托(Torr)的压强。边缘环160被放置在晶片164周围。由加利福尼亚州弗里蒙特的Lam Research公司生产的Kiyo可用于实施实施例。在本实施例中,秤172被安置在边缘环160下方。秤杆168被安置在秤172和边缘环160之间。控制器124可控地连接至气体源130、等离子体电源106、偏压电源116和所述秤172。
图2A是边缘环160、衬底164、电极120、秤172、和秤杆168的一部分的横截面的放大示意图。在此实施例中,秤172是压电换能器,其通过无线连接或通过连接在所述秤172和所述控制器124之间的至少一条导线204电连接至控制器124。在本实施例中,为使边缘环移动,控制器124施加跨导线204至秤172的电压。向秤172所施加的电压或跨越秤172的电荷引起秤172向所述秤杆施加作用力,并因此向边缘环160施加作用力。当该力大于边缘环160的重量时,所述边缘环将向上移动。当力等于边缘环160的重量时,边缘环保持静止/悬浮。当作为秤使用时,该***是反向的。控制器124接收来自秤172的电信号,其正比于边缘环160的新的重量。因此,压电换能器既作为秤172以称至少部分的边缘环160的重量,也作为致动器以移动该至少部分的边缘环160。
图3是一实施例的高阶流程图。秤用于测量消耗品的质量(步骤304)。在本实施例中,等离子体处理约束室104被用于蚀刻。因此,边缘环160是消耗品,其被蚀刻掉并且必须定期更换。使用处理室(步骤308)。在本示例中,蚀刻室用于蚀刻衬底。测量消耗品的质量的变化(步骤312)。在本示例中,边缘环160的顶部被蚀刻掉。图2B是的边缘环160顶端的部分已被蚀刻掉,留下不规则顶表面208后的边缘环160的部分的放大剖视图。蚀刻掉边缘环160的顶部的部分导致边缘环160的质量变化,这改变作用在秤杆168上的力,进而改变通过秤杆168施加到秤172上的力。力的变化使得秤172可以测量边缘环160的重量或质量的变化。
控制器124采用所测得的质量的变化来确定消耗品是否需要进行调节(步骤316)。如果不需要调节,则过程返回到使用处理室的步骤(步骤308),并且该过程继续进行。如果需要调节,则控制器124可确定消耗品是否需要更换(步骤324)。如果控制器124确定该消耗品需要被替换,则移除边缘环160,并提供新的边缘环(步骤328)。然后,该过程返回到步骤304,其中测量新的边缘环的质量(步骤304)。控制器124可确定当该边缘环的质量下降至阈值质量以下时边缘环应更换。如果控制器124确定不更换边缘环160,那么调节该消耗品(步骤332)。在本实施例中,边缘环160的调节通过移动边缘环160来完成。
图2C是部分已被调节后的边缘环160的部分放大剖视图。在本示例中,由控制器124通过导线204施加的较高的电压增加了跨越作为压电换能器的秤172的电荷。压电换能器增加作用到秤杆168的力,从而抬升边缘环160。程序返回到使用处理室的步骤(步骤308),并且该过程继续进行。
边缘环围绕所述电极,所述电极可以是陶瓷静电卡盘(ESC),并创建专门调谐“口袋”,该“口袋”在晶片下方、周围并延伸到表面上方。口袋的调谐是通过仔细选择边缘环的直径、高度、台阶、半径和角度以及其他参数来完成。边缘环是可消耗物件,并被等离子体侵蚀以及被等离子体导致变形。最终,边缘环磨损如此严重以致其不再适合被调节。在这种情况下,处理室的工艺成果落在标准之外且边缘环需要更换。更换边缘环需要打开处理室,这对客户的生产效率具有极大的破坏性。
本实施例提供了一种***,该***可以原位调节边缘环以补偿磨损。该***具有两个部分。一部分必须能够检测边缘环已磨损到怎样的程度。另一部分必须能够根据其磨损的程度来调整边缘环。本实施例提供了一种在一个紧凑单元中完成移动和感测的方法。
在这个示例中,压电换能器被用来执行移动和感测两者。压电致动器是电气-机械换能器。它们接收电信号并将其转换成很细微、很小、很精确的机械运动。该运动是由致动器赋予的力产生。此设计然后“反转”致动器,并且不是接收电流/电压并输出力,而是接收力并输出电流/电压。该力是边缘环的重量,该边缘环创建与所述重量成比例的电流/电压。电流/电压的变化将是重量的变化。所述重量变化将依边缘环的磨损被校准,并且该***将基于该读取知道将边缘环移动多少。
该边缘环(如果是单件)将通过两个或两个以上(可能3或4个)压电换能器被垂直地移动。换能器从边缘环下面将该环向上推以使其移动,并测量其重量的变化,以分析其磨损。
该***相比于使用激光器和镜的用于测量所述边缘环的蚀刻的***有了改进。使用激光器和镜的***体积大并且结合在处理室中并不理想。这样的***还要求用于激光信号进出处理室的通路。这就需要另一个窗并且在敏感位置密封。
上述实施例还提供相比于激光器和镜***的改进,其中,上述例子通过节省空间、需要更少的真空馈通、并且不与现有的处理室硬件冲突来解决所述问题。上述实施例通过利用现有的硬件和压电致动器解决了多个封装、发热和射频信号的问题,进而也可以进行边缘环状况的分析。
一种优选的实现方式使用压电换能器,该压电换能器赋予力来调整边缘环的位置并且还感测重量变化,以确定所需的调整量。一种替代设计将是使用气动换能器。气动换能器将压强转换为力,以移动边缘环。然后致动器将切换成感测边缘环的重量变化并输出压强,从而将告知工具要将边缘环的位置调整多少。
图4是另一个实施例中处理室的横截面示意图。蚀刻反应器400包括提供进气口的气体分配板406和卡盘408,气体分配板406和卡盘408位于被室壁450包围的蚀刻室449内。在蚀刻室449内,上面形成堆叠的衬底404被定位在卡盘408的顶部。卡盘408可以作为静电卡盘(ESC)提供来自ESC源448的偏置以保持衬底404或可使用另一个夹紧力以保持衬底404。气体源424通过分配板406被连接到蚀刻室449。离子体约束护罩(其在本实施方式中为C形护罩402)包围等离子体体积。在本示例中,使用电容耦合产生等离子体。由加利福尼亚州弗里蒙特的Lam Research公司生产的Flex,就是此类***的一个示例。在本示例中,在气体分配板406之上设置多个秤460。多个秤460中的每一个秤附接到多个吊架462中的吊架上。多个吊架中的每一个均被连接到处理环464。在本示例中,秤460可包括压电换能器,该压电换能器被电连接到控制器。
图5是处理环464的放大的仰视图。在本实施例中,该处理环464被分段成四段。每段被连接到所述多个吊架462中的两个吊架。在本实施例中,不是使用压缩来测量处理环464的质量,而是使用所述多个吊架462的张力来测量处理环464的质量。此外,不是测量整个处理环464的质量,而是可以替代地使用每一段的质量。在本实施例中,沉积可在处理环464上形成。因此,在本实施例中,处理环可以通过将处理环经受沉积除去工序作为消耗品的调节部分来进行调节。在相同实施例或另一实施例中,处理环464的段可以升高或降低作为消耗品的调节的一部分(步骤332)。在这样的运动中,段的质量可能会导致该段的升高或降低。在另一实例中,一段的质量可能会导致另一段的升高或降低。在这样的实施方式中,一段的质量可以被用来确定室的围绕另一段的区域所需的的补偿。
图6是示出计算机***600的高阶框图,计算机***600适于实现在实施方式中使用的控制器435。该计算机***可具有许多物理形式,范围从集成电路、印刷电路板和小型手持设备到巨型超级计算机。该计算机***600包括一个或多个处理器602,并且还可以包括电子显示装置604(用于显示图形、文本、和其他数据)、主存储器606(例如,随机存取存储器(RAM))、存储装置608(例如,硬盘驱动器)、可移动存储设备610(例如,光盘驱动器)、用户接口设备612(例如,键盘、触摸屏、键盘,鼠标或其它指针设备等)、以及通信接口614(例如,无线网络接口)。通信接口614允许软件和数据在计算机***600和外部设备之间经由链路传送。该***还可以包括将连接前述的装置/模块的通信构架616(例如,通信总线、交叉杆、或网络)。
经由通信接口614传送的信息可以是信号的形式,如电子信号、电磁信号、光学信号、或其它能够通过通信接口614、经由携带信号并且可以使用有线或电缆、光纤、电话线、蜂窝电话链路、射频链路、和/或其它通信信道实现的通信链路接收的其它信号的形式。利用这样的通信接口,可以设想,一个或多个处理器602可以从网络接收信息,或者可以在执行上述方法步骤的过程中输出信息到网络。此外,方法实施例可通过处理器单独执行,或者可以通过网络(例如互联网)结合共享该处理一部分的远程处理器执行。
术语“非暂态计算机可读介质”一般用来指介质,例如主存储器、辅助存储器、可移动存储装置和存储设备,诸如硬盘、闪存、磁盘驱动器存储器、CD-ROM光盘和其他形式的永久性存储器,并不得被解释为涵盖暂态主题,诸如载波或信号。计算机代码的示例包括机器代码(如由编译器产生)以及包含由使用解释器的计算机执行的更高级代码的文件。计算机可读介质也可以是通过包含在载波中的计算机数据信号传输并且表示由处理器执行的指令序列的计算机代码。
在一个实施例中,在存储装置608中的计算机可读代码允许压电换能器用作秤。这样的软件可以首先测量跨越压电换能器的电压或电荷。然后这样的软件将测得的电压或电荷与质量相关联。这种相关性可以被表示为函数,或者可以通过查表来提供。然后相关质量将被提供。在存储装置608中的计算机可读代码还可以允许压电换能器作为致动器。这样的软件可使用相关质量来确定将要施加到处理环464的所期望有的力或位移。然后软件会找到与所期望的力或位移相关的电压或电荷。然后,该软件将施加所发现的跨越压电换能器的电压或电荷。
在另一实施例中,用于所述秤和致动器软件可以通过使用所测得的电压或电荷进一步集成,以确定期望的位移所需施加的电压或电荷,并确定消耗品是否必须去除。这样的实施例将仍然有秤和致动器,但采用更紧密的集成,使得质量不计算,但表示质量的电压被用于确定是否需要致动或更换。使用电压或电荷作为质量指示符可能不能确定最终质量,但将使用质量指示符来确定操作,其中,这样的操作是基于质量的变化,这反映在电压变化或电荷变化,进而反映消耗品位置的变化。
通过使用换能器既作秤又作致动器,减少了执行这两个功能所需的装置的占用空间。在不同的实施例中,质量的变化可以在处理室使用不同次数后进行测量。例如,质量可以在每个晶片加工之后测量或质量可以在100个晶片处理后测量。在上述实施例中,秤由带有相关联的电子设备的压电换能器所提供,如具有使得质量能测量的软件的控制器。如果没有适当的软件,该压电换能器不能用于测量质量,即意味着这样一个压电换能器不是秤。电压或电荷的这样的变化随后将被用于确定对于所期望的致动应当施加的电压或电荷。
虽然已经根据几个优选实施例对发明进行了描述,但仍有落入本发明的范围之内的变形、置换和各种替代等同方案。存在实施本文所公开的方法和装置的许多替代方式。因此,意在将下面所附的权利要求解释为包括所有这些落入本发明的真实精神和范围内的变形、置换和各种替代等同方案。
Claims (10)
1.一种在处理室中使用的装置,其包括:
位于所述处理室内的消耗品;和
被定位成测量所述消耗品的质量的秤。
2.如权利要求1所述的装置,还包括控制器,该控制器电连接至所述秤。
3.如权利要求2所述的装置,还包括用于基于由所述秤测得的质量移动所述消耗品的致动器。
4.如权利要求3所述的装置,其中所述秤包括压电换能器,其中从所述压电换能器测得的电流或电压被用于确定质量。
5.如权利要求4所述的装置,其中所述致动器还包括所述压电换能器,其中所施加的电流或电压造成所述致动器的移动。
6.如权利要求5所述的装置,其中所述处理室是等离子体处理室。
7.如权利要求6所述的装置,其中所述消耗品呈环形形状。
8.如权利要求7所述的装置,其中所述消耗品的环形形状是分段的环形形状。
9.一种方法,其包括:
测量在处理室中的至少一个消耗品的质量;
使用所述处理室;
测量所述至少一个消耗品的质量的变化;
根据所测得的所述至少一个消耗品的质量的变化,调节所述至少一个消耗品。
10.一种装置,其包括:
等离子体处理室;
位于所述处理室内的消耗品;
压电换能器,其被定位成测量所述消耗品的质量并充当用于移动所述消耗品的致动器;
电连接到所述压电换能器的控制器,其中所述控制器包括:
至少一个CPU;和
电连接到所述至少一个CPU的计算机可读介质,
其中,所述计算机可读介质包括:
用于从所述压电换能器测量电压或电流的计算机可读代码;
用于从所测得的电压或电流确定所施加的电压或电流的计算机可读代码;和
用于跨越所述压电换能器施加所确定的所施加的电压或电流的计算机可读代码,其中所施加的所确定的所施加的电压或电流在所述处理室内移动所述消耗品。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109841536A (zh) * | 2017-11-29 | 2019-06-04 | 长鑫存储技术有限公司 | 边缘补偿***、晶圆载台***及晶圆安装方法 |
CN113597659A (zh) * | 2019-04-22 | 2021-11-02 | 应用材料公司 | 用于原位边缘环腐蚀监测的传感器和*** |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180099776A (ko) | 2016-01-26 | 2018-09-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 웨이퍼 에지 링 리프팅 솔루션 |
KR20180033995A (ko) * | 2016-09-27 | 2018-04-04 | 삼성전자주식회사 | 모니터링 유닛, 이를 포함하는 플라즈마 처리 장치 및 그를 이용한 반도체 칩의 제조 방법 |
US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
WO2019022707A1 (en) * | 2017-07-24 | 2019-01-31 | Lam Research Corporation | MOBILE RIBBON DESIGNS |
US10510185B2 (en) | 2017-08-25 | 2019-12-17 | Advanced Micro Devices, Inc. | Variable rate shading |
US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
US11538713B2 (en) * | 2017-12-05 | 2022-12-27 | Lam Research Corporation | System and method for edge ring wear compensation |
US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
US10600623B2 (en) | 2018-05-28 | 2020-03-24 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
WO2020180656A1 (en) * | 2019-03-06 | 2020-09-10 | Lam Research Corporation | Measurement system to measure a thickness of an adjustable edge ring for a substrate processing system |
US11279032B2 (en) | 2019-04-11 | 2022-03-22 | Applied Materials, Inc. | Apparatus, systems, and methods for improved joint coordinate teaching accuracy of robots |
US11101115B2 (en) * | 2019-04-19 | 2021-08-24 | Applied Materials, Inc. | Ring removal from processing chamber |
US10964584B2 (en) | 2019-05-20 | 2021-03-30 | Applied Materials, Inc. | Process kit ring adaptor |
US11626305B2 (en) | 2019-06-25 | 2023-04-11 | Applied Materials, Inc. | Sensor-based correction of robot-held object |
US11211269B2 (en) | 2019-07-19 | 2021-12-28 | Applied Materials, Inc. | Multi-object capable loadlock system |
US11443923B2 (en) * | 2019-09-25 | 2022-09-13 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure |
US11370114B2 (en) | 2019-12-09 | 2022-06-28 | Applied Materials, Inc. | Autoteach enclosure system |
USD980176S1 (en) | 2020-06-02 | 2023-03-07 | Applied Materials, Inc. | Substrate processing system carrier |
USD954769S1 (en) | 2020-06-02 | 2022-06-14 | Applied Materials, Inc. | Enclosure system shelf |
US11721569B2 (en) | 2021-06-18 | 2023-08-08 | Applied Materials, Inc. | Method and apparatus for determining a position of a ring within a process kit |
WO2024023898A1 (ja) * | 2022-07-25 | 2024-02-01 | 三菱電機株式会社 | プラズマ処理装置および劣化判定方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020072240A1 (en) * | 2000-12-07 | 2002-06-13 | Semiconductor Leading Edge Technologies, Inc. | Plasma etching apparatus with focus ring and plasma etching method |
US20100139374A1 (en) * | 2008-12-03 | 2010-06-10 | Dermody Daniel L | Methods for rheological testing of multiple samples and systems therefor |
CN102965623A (zh) * | 2012-11-09 | 2013-03-13 | 沈阳黎明航空发动机(集团)有限责任公司 | 一种DZ125叶片表面NiCrAlYSi涂层的修复方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135873A (ja) * | 1999-11-08 | 2001-05-18 | Minolta Co Ltd | 圧電変換素子 |
US6579151B2 (en) * | 2001-08-02 | 2003-06-17 | Taiwan Semiconductor Manufacturing Co., Ltd | Retaining ring with active edge-profile control by piezoelectric actuator/sensors |
US6964201B2 (en) * | 2003-02-25 | 2005-11-15 | Palo Alto Research Center Incorporated | Large dimension, flexible piezoelectric ceramic tapes |
US7001482B2 (en) * | 2003-11-12 | 2006-02-21 | Tokyo Electron Limited | Method and apparatus for improved focus ring |
US7682985B2 (en) * | 2004-03-17 | 2010-03-23 | Lam Research Corporation | Dual doped polysilicon and silicon germanium etch |
JP2005340693A (ja) * | 2004-05-31 | 2005-12-08 | Nec Kansai Ltd | プラズマエッチング装置 |
US7578301B2 (en) * | 2005-03-28 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system |
US7544270B2 (en) * | 2005-11-14 | 2009-06-09 | Infineon Technologies Ag | Apparatus for processing a substrate |
JP5657262B2 (ja) * | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN102965632A (zh) * | 2011-09-01 | 2013-03-13 | 上海华力微电子有限公司 | 用于物理气相沉积腔室的靶磁场强度稳定装置及其方法 |
-
2015
- 2015-11-06 US US14/934,624 patent/US10985078B2/en active Active
-
2016
- 2016-03-11 SG SG10202004091TA patent/SG10202004091TA/en unknown
- 2016-03-11 KR KR1020160029758A patent/KR102660512B1/ko active IP Right Grant
- 2016-03-11 TW TW105107506A patent/TWI692046B/zh active
- 2016-03-11 SG SG10201601918VA patent/SG10201601918VA/en unknown
- 2016-03-18 JP JP2016054585A patent/JP6794124B2/ja active Active
- 2016-03-18 CN CN201610156777.6A patent/CN106684013B/zh active Active
-
2024
- 2024-04-19 KR KR1020240052972A patent/KR20240059609A/ko active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020072240A1 (en) * | 2000-12-07 | 2002-06-13 | Semiconductor Leading Edge Technologies, Inc. | Plasma etching apparatus with focus ring and plasma etching method |
US20100139374A1 (en) * | 2008-12-03 | 2010-06-10 | Dermody Daniel L | Methods for rheological testing of multiple samples and systems therefor |
CN102965623A (zh) * | 2012-11-09 | 2013-03-13 | 沈阳黎明航空发动机(集团)有限责任公司 | 一种DZ125叶片表面NiCrAlYSi涂层的修复方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109841536A (zh) * | 2017-11-29 | 2019-06-04 | 长鑫存储技术有限公司 | 边缘补偿***、晶圆载台***及晶圆安装方法 |
CN113597659A (zh) * | 2019-04-22 | 2021-11-02 | 应用材料公司 | 用于原位边缘环腐蚀监测的传感器和*** |
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