TWI669408B - 牽引銷、使用該牽引銷之磊晶生長裝置以及矽磊晶晶圓之製造方法 - Google Patents
牽引銷、使用該牽引銷之磊晶生長裝置以及矽磊晶晶圓之製造方法 Download PDFInfo
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Abstract
提供磊晶生長裝置用的牽引銷,其避免因為牽引銷而造成矽晶圓背面的瑕疵,並能夠抑制該牽引銷與基座的貫通孔周圍的壁面互相摩擦而造成的發塵,還能夠防止玻璃碳的剝離。
本發明的牽引銷包括:用以插通於基座的貫通孔內的直體部;用以抵接於矽晶圓的頭部;至少覆蓋前記頭部之頂部的被覆部;前記直體部及前記頭部由多孔質體構成;前記被覆部由碳系被覆材構成;前記被覆部填充了前記頭部中的前記多孔質SiC之空隙的至少一部分。
Description
本發明係關於牽引銷、使用該牽引銷的磊晶生長裝置及矽磊晶晶圓之製造方法。
一般而言,由後述方式得到矽晶圓,用丘克拉斯基法(Czochralski,CZ法)等育成單結晶矽,將該矽單結晶切斷成塊後,切薄片,經過平面研削(lapping)工程、蝕刻工程及鏡面研磨(polishing)工程再進行最終清洗。之後,執行各種品質檢査,若無確認到異常則作為製品出貨。
在此,在更要求結晶的完全性的情況下、或者必須要電阻率相異的多層構造的情況等,在矽晶圓上使單結晶矽薄膜氣相生長(磊晶生長),以製造矽磊晶晶圓。
矽磊晶晶圓的製造,使用了例如枚葉式磊晶生長裝置。在此,參照圖1說明一般的枚葉式磊晶生長裝置。如圖1所示,磊晶生長裝置1具有被上部圓頂11、下部圓頂12及圓頂安裝體13圍住的磊晶膜形成室2。該磊晶膜形成室2,在其側面的對向位置設有進行反應氣體的供給及排出的氣體供給口31及氣體排出口32。另一方面,在磊晶膜形成室2內,配置了載置矽晶圓W的基座4。基座4,其下面的外周部藉由與基座回轉部40連結的基座支撐軸41而嵌合支持,連同基
座支撐軸41一起回轉。另外,基座4上,形成了讓用以進行矽晶圓W之升降的牽引銷5穿過的貫通孔42。另外,牽引銷5,其基端係由升降軸6所支持並升降。
使用圖2所示的基座4的貫通孔42周圍的放大圖、圖3所示的牽引銷5的放大圖,更詳細說明。牽引銷5具有與矽晶圓W抵接的頭部52及插通於基座4的貫通孔42內的直體部51。已導入磊晶膜形成室2內的矽晶圓W,將插通在基座4的貫通孔42中的牽引銷5向基座4的上方移動,如圖2所示,使得牽引銷5的頭部52抵接於矽晶圓W的背面,用牽引銷5暫時支持住矽晶圓W。在此,牽引銷5的上升移動,係透過支持該牽引銷5的基端的升降軸6之上升移動來進行。
繼之,將支持基座4的基座支撐軸41上升使得基座4移動到矽晶圓W的位置,將矽晶圓W載置於基座4上。在此狀態下,牽引銷5的頭部52被收入基座4的貫通孔42內。如此一來,將矽晶圓W載置於基座4上。然後,使用例如配置在基座4的上方及下方的複數台加熱燈14,將矽晶圓W加熱到1000℃以上的溫度,並將反應氣體供給到磊晶膜形成室2內,使特定厚度的磊晶膜生長以製造矽磊晶晶圓。
磊晶生長後,藉由支撐軸41的下降使得基座4下降。此下降係進行到牽引銷5被升降軸6所支持並從基座4突出的位置為止,使矽晶圓W被牽引銷5所支持。然後,將未圖示的搬運板導入磊晶膜形成室2內,使牽引銷5下降將矽晶圓W載置於搬運板上,藉此將矽晶圓W從牽引銷5移交到搬運板。之後,將矽晶圓W和搬運板一起從生長裝置1退出。
在上述說明的矽磊晶晶圓的製造工程中,將已導入生長裝置1內的矽晶圓W載置於基座4上為止的過程及、將磊晶生長後的矽晶圓W從基座4移交到搬運板的過程中,係用牽引銷5抵接支持矽晶圓W。該矽晶圓背面的牽引銷5所抵接的頭部52,隨著牽引銷5上升而抵住,接著維持了頭部的接觸,因此,導致了在該接觸的部分的瑕疵產生。
而且,在前述過程及其前後,必須使牽引銷5升降,在該牽引銷5的升降動作中,牽引銷5的直體部51與基座4的貫通孔42周圍的壁面互相摩擦的結果,會招致發塵。此塵會變成粒子附著在磊晶膜表面,降低矽晶圓品質,因此希望能抑制之。
因此,專利文獻1中提出一種牽引銷,其具有由SiC形成的鞘部和嵌入該鞘部之玻璃碳的頭部。
先行技術文獻
專利文獻:
專利文獻1:日本特開2003-142407號公報
專利文獻1中揭露的牽引銷中,使得該牽引銷中與矽晶圓接觸的面為硬度低於矽晶圓的材料。因此,該牽引銷應該能夠防止在頭部和矽晶圓接觸之位置之瑕疵發生。另外,該牽引銷,由於鞘部和至少基座4的表面為同質材料之SiC所形成,所以應該也能夠防止在牽引銷升降動作時,由於牽引銷的直體部和貫通孔42周圍壁面的彼此摩擦而導致的發塵。
但是,專利文獻1中,因為頭部嵌入鞘部,在磊晶生長處理中的高熱處理時,會由於頭部及鞘部的材質相異所造成的熱膨脹差而導致嵌入部破裂而無法使用。
因此,本發明人,嘗試製作將玻璃碳構成的碳系被覆材覆蓋在SiC基材構成的牽引銷的頂部之牽引銷,以取代如專利文獻1中記載的將玻璃碳構成的頭部嵌入中空鞘部。但是,在磊晶生長裝置使用像這樣試作的牽引銷的情況下,碳系被覆材會剝離。
因此,本發明之目的在於提供能夠防止碳系被覆材的剝離的磊晶生長裝置用的牽引銷。
本發明人致力於研究用以解決上述課題的方法,假設試作的牽引銷中發生剝離的原因為碳系被覆材和SiC基材的密接性不足。SiC基材有緻密的SiC構造,覆蓋於SiC基材上的碳系被覆材為單純的積層構造,由於熱膨脹的差異而在磊晶生長中發生剝離。因此,想到用多孔質體作為牽引銷的基材,以取代SiC基材,發現了若為這樣的牽引銷,則對於上述諸課題均為有效,而完成了本發明。
亦即,本發明的要旨構成如下。
(1)一種牽引銷,其係插通在設置於磊晶生長裝置內的基座的貫通孔內並可於該貫通方向移動,支持載置於前記基座的矽晶圓同時使該矽晶圓相對於前記基座進退,該牽引銷包括:插通於前記貫通孔內的直體部;抵接於前記矽晶圓的頭部;至少覆蓋前記頭部之頂部的被覆部;其中,前記直體部及前記頭部由多孔質體構成;前記被覆部由碳系被覆材構成;前記被覆部填充了前記頭部中的前記多孔質體之空隙的至少一部分。
再者,本說明書中所述的「抵接」意味著,進行磊晶生長時,牽引銷的頭部透過相較於該頭部的厚度足夠小的表層厚度1μm~100μm的被覆部,「在抵接著的狀態下相連於」或者「緊貼著」矽晶圓的背面之狀態。再者,所謂的表層厚度為,在牽引銷的中心軸,從牽引銷的頭部側的最表面(被覆部的露出面)到頭部的抵接側的表面的厚度。
(2)如(1)所記載的牽引銷,前記多孔質體由多孔質SiC或多孔質碳材構成。
(3)如(1)或(2)所記載的牽引銷,前記直體部被SiC表面材所覆 蓋。
(4)如(1)~(3)中任一項所記載的牽引銷,前記多孔質體的氣孔率為15%以上85%以下。
(5)如(1)~(4)中任一項所記載的牽引銷,前記被覆部的前記碳系被覆材由玻璃碳或熱分解碳構成。
(6)磊晶生長裝置,其特徵在於具有如(1)~(5)中任一項所記載的牽引銷。
(7)矽磊晶晶圓之製造方法,其特徵在於,使用如前記(6)記載的磊晶生長裝置,使磊晶膜在矽晶圓上生長。
依據本發明,能夠提供磊晶生長裝置用的牽引銷,其能夠防止碳系被覆材的剝離。
1‧‧‧磊晶生長裝置
2‧‧‧磊晶膜形成室
4‧‧‧基座
5‧‧‧牽引銷
6‧‧‧升降軸
W‧‧‧矽晶圓
11‧‧‧上部圓頂
12‧‧‧下部圓頂
13‧‧‧圓頂安裝體
40‧‧‧基座回轉部
41‧‧‧基座支撐軸
42‧‧‧貫通孔
500‧‧‧牽引銷
510‧‧‧直體部
520‧‧‧頭部
530‧‧‧SiC表面材
550‧‧‧被覆部
【圖1】依據習知技術的磊晶生長裝置之剖面圖。
【圖2】表示依據習知技術的磊晶生長裝置中的基座之貫通孔周圍的剖面圖。
【圖3】表示依據習知技術的牽引銷之部分剖面圖。
【圖4】表示依據本發明的一實施形態的牽引銷剖面圖。
【圖5】依據本發明的一實施形態的牽引銷之頭部的放大剖面圖。
以下,參照圖面,詳細說明本發明的牽引銷。再者,圖中各構成的縱橫比係為了說明方便起見而誇張圖示,與實際情況不同。
圖4為顯示依據本實施形態的牽引銷500的剖面圖。牽引銷500,其係插通在設置於已用圖1說明的磊晶生長裝置1內的基座4的貫通孔42內並可於該貫通方向移動,支持載置於基座4的矽晶圓W同時使該矽晶圓W相對於基座4進退。亦即,依據本實施形態的牽引銷500,其係為可以置換使用於插通在圖1所示的依據習知技術之磊晶生長裝置1的基座4的貫通孔42的牽引銷5。
在此,牽引銷500具有:插通於貫通孔42內的直體部510、抵接於矽晶圓W的頭部520、至少覆蓋頭部520的頂部的被覆部550。因此,牽引銷500和矽晶圓W接觸的介面為,被覆部550的露出面550A(牽引銷500的最表面)。如圖4所示,直體部510可以為棒狀,頭部520之直徑可以大於直體部510及貫通孔42。再者,依據本實施形態的牽引銷500,棒狀的直體部的前端具有支援矽晶圓的頭部即可,無須限定其形狀,因此,並不限定於圖示的形狀。可以因應基座4,而使牽引銷500為適當的形狀。
在此,牽引銷500中,直體部510及頭部520由多孔質體構成,被覆部550由碳系被覆材構成。而且,在牽引銷500中,被覆部550填充了頭部520中的多孔質體之空隙的至少一部分。再者,在本說明書中,如作為牽引銷500的頭部520側之放大圖的圖5所示,將被覆部550的厚度D定義為表層厚度D1及深部厚度D2之合計厚度(D1+D2)。亦即,表層厚度D1為,在牽引銷500的中心軸中,從被覆部550的露出面550A(為牽引銷500的最表面,進行磊晶生長時與矽晶圓背面直接接觸的部分),到頭部520的抵接側之表面520A為止的厚度。另外,深部厚度D2為,在牽引銷500的中心軸中,從頭部520的抵接側的表面520A,到填充被覆部550的表層部之部分的厚度。
依據本實施形態的牽引銷500中具有上述的充填構造,因此,能夠確保碳系被覆材構成的被覆部550、及多孔質體構成的頭部520的密接性。因此,將牽引銷500用於磊晶生長裝置1的情況下,也能夠防止碳系被覆材的剝離。
再者,被覆部550的表層厚度D1通常為1μm~100μm,相對於牽引銷500的頭部520的厚度而言是足夠小的。另外,填充了多孔質體的空隙的碳系被覆材構成的被覆部550的深部厚度D2為50μm以上為佳,為100μm以上尤佳。其係為了成為藉由錨定效果而使被覆部550難以剝離的構造。另外,亦可由被覆部550填充頭部520的多孔質體的全部空隙。被覆部550的全體厚度D為100μm以上為佳,考慮到牽引銷500的製造效率,其為300μm以下為佳。
另外,如前述,牽引銷500和矽晶圓W接觸的介面為被覆部550的露出面550A,碳系被覆材與矽晶圓W接觸。因此,用硬度低於矽晶圓W的材料作為碳系被覆材為佳。藉此,能夠更確實避免因為牽引銷500造成的矽晶圓背面的瑕疵。使用玻璃碳或熱分解碳等作為此種碳系被覆材為佳。再者,由於具有用以耐受磊晶生長裝置內的使用(最高溫度1200℃左右)的耐熱性、或者具有對於使用作為蝕刻氣體的HCl的耐性,基於此點而言,這些碳系被覆材是較佳的。而且,這些碳系被覆材不含有在矽磊晶晶圓內形成活性準位元的元素,基於此點而言其亦為有利的。再者,使用這些碳系被覆材,則容易獲致在磊晶膜成膜時在矽晶圓面內的均熱性,就此點而言其亦為有利的。
而且,構成直體部510及頭部520的多孔質體由多孔質SiC或多孔質碳材構成為佳。若使用多孔質SiC,則基於牽引銷500與基座4的貫通孔42周圍之壁面接觸的部分為同質材料的SiC,所以能夠更確實抑制兩者的互相摩擦所造成的發塵之點而言是較佳的。另一方面,多孔質碳材,基於被覆部550容易填充多孔質體之空隙的至少一部分,且不容易發生剝離的點而言是較佳的。
在依據本發明的牽引銷500中,可以用一般的手法得到直體部510及頭部520所構成的構造體。例如,多孔質SiC構成了直體部510及頭部520所構成的構造體的情況下,可以藉由使氣孔分散於常壓下燒結的SiC燒結體中而製 作。
對於該頭部520的頂部,形成碳系被覆材構成的被覆部550。例如,使用玻璃碳作為碳系被覆材的情況下,將酚醛樹脂及COPNA樹脂等的熱硬化性樹脂溶解於溶劑,將該溶液用刷毛塗布在頭部520的頂部表面、或用噴塗等進行塗布。然後,經過乾燥及硬化後,在氬等的惰性氣體環境下,於700~2600℃中進行加熱處理,藉此能夠形成玻璃碳構成的被覆部550。如此所形成的被覆部550,由於玻璃碳也浸潤到頭部520的內部,而填充在頭部520中的多孔質體之空隙。在此請況下,被覆部550的深部厚度D2是因浸潤而來。
另外,用下述方法亦可形成玻璃碳構成的被覆部550。亦即,將作為玻璃碳之原料的酚醛樹脂等的熱硬化性樹脂,對於頭部520,部分或全體地施以含浸處理或被覆處理、或含浸處理及被覆處理的兩處理,並碳化之,藉此亦可形成玻璃碳構成的被覆部550。再者,除了酚醛樹脂之外,亦可使用呋喃樹脂(furan resin),多碳化二亞胺樹脂,糠醛-苯酚共聚作用體,二乙烯基苯樹脂及,COPNA樹脂,以作為熱硬化性樹脂。在此情況下,被覆部550的深部厚度D2係因含浸而來。
另一方面,使用熱分解碳作為碳系被覆材的情況下,對於頭部520的頂部之部分或頭部全體吹附或塗布碳氫材料,用800℃以上的熱CVD法等使之成膜即可。如此所形成的被覆部550,熱分解碳也侵入頭部520的內部,因此,填充頭部520中的多孔質體的空隙。在此情況下,被覆部550的深部厚度D2係因浸潤而來。再者,所謂的熱分解碳為,將碳數1~8左右的碳氫系化合物熱分解而得到的高純度且高結晶化度的碳,已知有、PYROCARB(IBIDEN公司製)、PYROLYTIC GRAPHITE(東洋碳公司製)等作為熱分解碳。
再者,製造依據本實施形態的牽引銷500隻被覆部550的手法,當然不限制於上述具體例。
另外,直體部510被SiC表面材530覆蓋為佳。藉此,能夠更確實抑制牽引銷500和基座4的貫通孔42周圍之壁面互相摩擦所造成的發塵。再者,SiC表面材530可以藉由化學氣相沉積(CVD法)形成。再者,SiC表面材530對於直體部510的被覆厚度在40μm以上為佳,在60μm以上尤佳。
再者,為了更確實得到上述效果,用於本實施形態的多孔質體之氣孔率在15%以上85%以下為佳,在35%以上85%以下亦佳。為了更確實得到上述效果,尤其以15%以上60%以下更佳。再者,本說明書中的「氣孔率」為,假設多孔質體內的空隙未被碳系被覆材填充的情況下的,多孔質體內之空隙的體積佔多孔質體的全體積的比率。
再者,圖4的例中,被覆部550僅覆蓋頭部520的頂部,但亦可覆蓋頭部520全部。另外,被覆部550的碳系被覆材亦可填充頭部520的內部中的全部空隙。
另一方面,圖4的例中,將SiC表面材530覆蓋直體部510,在頭部520的側周面及下面,亦即被覆部550所覆蓋的面以外設置SiC表面材亦可。
另外,依據本實施形態的磊晶生長裝置具有上述的牽引銷500。該磊晶生長裝置中除了牽引銷500以外的構成,可以採用與已使用圖1說明的一般的磊晶生長裝置1一樣者。而且,依據本實施形態的矽磊晶晶圓之製造方法,使用具有該牽引銷500的磊晶生長裝置,使磊晶膜生長在矽晶圓上。依據該製造方法,能夠防止碳系被覆材的剝離。
【實施例】
繼之,為了使本發明的效果更明確,而舉出以下的實施例,但本發明並不受到以下實施例的任何限制。
(發明例1)
製造如圖4所示的牽引銷500。在牽引銷500的製造時,使得多孔質SiC的氣孔率為40%。以酚醛樹脂含浸牽引銷500的頭部520,使其碳化,形成玻璃碳構成的被覆部。從牽引銷500的最表面(被覆部550的露出面550A)到頭部520的表面520A的厚度,亦即表層厚度D1為約40μm。另外,從頭部520的抵接側的表面520A到填充被覆部550的表層部之部分的厚度(亦即,深部厚度D2)為100μm。而且,用CVD法,於1250℃下,使直體部510的周面被SiC表面材覆蓋。再者,各厚度為,在本試驗後將牽引銷剖面剖開用顯微鏡、SEM測定到的,為50枚磊晶生長處理後之各平均厚度的測定值。
(發明例2)
發明例1中係形成由玻璃碳構成的被覆部,但在此係改以熱分解碳作為碳系被覆材。其他條件和發明例1一樣,製造發明例2之牽引銷。
(比較例1)
準備圖3所示的牽引銷5。牽引銷5的直體部51及頭部52由緻密的(非多孔質)SiC構成。將玻璃碳覆蓋於該頭部52的表面,製造比較例1之牽引銷。
(比較例2)
準備圖3所示之僅由SiC構成的牽引銷5,作為比較例2之牽引銷。
(比較例3)
準備圖3所示之僅由玻璃碳構成的牽引銷5,作為比較例3之牽引銷。
將發明例1,2及比較例1~3之牽引銷適用於圖1所示的磊晶生長裝置1,按照以下的程序,製造矽磊晶晶圓。再者,基座4係使用在碳基材的表面有SiC被覆者。另外,使用有硼摻雜的直徑300mrm的矽晶圓W作為矽磊晶晶圓的基板。
矽磊晶晶圓的製造時,首先,在溫度1150℃中供給作為原料來源氣體的三氯矽烷氣體,對基座4的表面施以矽被覆。繼之,將矽晶圓W導入磊晶膜形成室2內,使用牽引銷將之載置於基座4上。繼之,在1150℃中,供給氫氣
體、執行氫熱處理後,在1150℃中,使矽的磊晶膜生長4μm以得到磊晶矽晶圓。在此,使用三氯矽烷氣體作為原料來源氣體,另外,使用乙硼烷氣體作為摻雜劑氣體,使用氫氣體作為載體氣體。
對於如此得到的矽磊晶晶圓,評價其表面及背面的品質。對於發明例1,2及比較例1~3,在磊晶生長後取出牽引銷,以目視觀察碳系被覆材有無剝離。結果如表1所示。再者,各評價手法如後。
<表面品質>
對於已得到的磊晶晶圓,測定0.25μmLPD發生密度。亦即,對於已製造的磊晶晶圓,使用晶圓表面檢査裝置(KLA-Tencor公司製、SP-2),評價在磊晶膜表面觀察到的尺寸0.25μm以上的表面缺陷(LPD:Light Point Defect)的個數。依據該測定結果,能夠評價發塵造成的粒子之發生狀況。
評價基準如下。
○:0.2個/wafer以下
△:0.2個/wafer超~0.5個/wafer以下
×:0.5個/wafer超
<背面品質>
對於已得到的磊晶晶圓,使用晶圓表面檢査裝置(KLA-Tencor公司製、SP-2)、測定牽引銷接觸區域中具有雷射反射之設定值以上的散亂強度之區域的面積,作為牽引銷抵接部的銷印強度,評價晶圓背面的牽引銷造成的瑕疵。
評價基準如下。
◎:0.5mm2以下
○:0.5mm2超~1mm2以下
△:1mm2超~2mm2以下
×:2mm2超
由表1可以確認,藉由使用依據本發明的發明例1,2的牽引銷,能夠避免牽引銷造成的矽晶圓背面之瑕疵,並能夠抑制該牽引銷與基座的貫通孔周圍之壁面互相摩擦而造成發塵,並能夠防止碳系被覆材的剝離。
Claims (6)
- 一種牽引銷,其係插通在設置於磊晶生長裝置內的基座的貫通孔內並可於該貫通方向移動,支持載置於前記基座的矽晶圓同時使該矽晶圓相對於前記基座進退,該牽引銷包括:插通於前記貫通孔內的直體部;抵接於前記矽晶圓的頭部;至少覆蓋前記頭部之頂部的被覆部;其中,前記直體部及前記頭部由多孔質體構成,前記多孔質體的氣孔率為15%以上85%以下;前記被覆部由碳系被覆材構成;前記被覆部填充了前記頭部中的前記多孔質體之空隙的至少一部分。
- 如申請專利範圍第1項所記載的牽引銷,前記多孔質體由多孔質SiC或多孔質碳材構成。
- 如申請專利範圍第1項所記載的牽引銷,前記直體部被SiC表面材所覆蓋。
- 如申請專利範圍第1到3項中任一項所記載的牽引銷,前記被覆部的前記碳系被覆材由玻璃碳或熱分解碳構成。
- 一種磊晶生長裝置,其特徵在於具有如申請專利範圍第1~4項中任一項記載的牽引銷。
- 一種矽磊晶晶圓之製造方法,其特徵在於,使用如申請專利範圍第5項記載的磊晶生長裝置,使磊晶膜在矽晶圓上生長。
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USD920936S1 (en) | 2019-01-17 | 2021-06-01 | Asm Ip Holding B.V. | Higher temperature vented susceptor |
US11404302B2 (en) | 2019-05-22 | 2022-08-02 | Asm Ip Holding B.V. | Substrate susceptor using edge purging |
US11764101B2 (en) | 2019-10-24 | 2023-09-19 | ASM IP Holding, B.V. | Susceptor for semiconductor substrate processing |
USD1031676S1 (en) | 2020-12-04 | 2024-06-18 | Asm Ip Holding B.V. | Combined susceptor, support, and lift system |
KR20240042203A (ko) * | 2021-02-01 | 2024-04-01 | 가부시키가이샤 아마야 | 반도체 제조 장치 및 반도체의 제조 방법 |
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JP6766893B2 (ja) | 2020-10-14 |
CN110506321B (zh) | 2023-05-02 |
CN110506321A (zh) | 2019-11-26 |
KR20190088564A (ko) | 2019-07-26 |
DE112017006987T5 (de) | 2019-10-10 |
US11264265B2 (en) | 2022-03-01 |
DE112017006987B4 (de) | 2022-09-08 |
JPWO2018142788A1 (ja) | 2019-07-11 |
KR102262311B1 (ko) | 2021-06-07 |
WO2018142788A1 (ja) | 2018-08-09 |
TW201840886A (zh) | 2018-11-16 |
US20190355612A1 (en) | 2019-11-21 |
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