JP6435992B2 - エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン - Google Patents
エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 230000003746 surface roughness Effects 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 15
- 229910021397 glassy carbon Inorganic materials 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
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- 238000002474 experimental method Methods 0.000 description 8
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
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- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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Description
すなわち、特許文献1に記載される発明に限らず、一般的に、サセプタ4は、耐熱性および耐酸性の観点から、カーボン基材をSiCで被覆したもの、あるいは基材そのものをSiC製としたもの等が用いられ、リフトピンも同様にカーボン基材をSiCで被覆したもの、あるいは基材そのものをSiC製としたものが用いられている。
(1)チャンバーの内部に、シリコンウェーハを載置するサセプタと、該サセプタを下方から支持し、前記サセプタの中心と同軸上に位置する主柱と該主柱から放射状に延びる支持アームとを有する支持シャフトと、前記サセプタに設けられた貫通孔および前記支持アームに設けられた貫通孔の双方に挿通されて鉛直方向に移動自在に配設された、リフトピンとを備え、該リフトピンを昇降させて前記シリコンウェーハを前記サセプタ上に脱着させるエピタキシャル成長装置において、前記リフトピンの少なくともその表層域は前記サセプタよりも硬度が低い材料で構成され、前記サセプタの貫通孔内を通過する前記リフトピンの直胴部上部領域の表面粗さが0.1μm以上0.3μm以下であり、かつ、前記支持アームの貫通孔内を通過する前記リフトピンの直胴部下部領域の表面粗さが1μm以上10μm以下であることを特徴とするエピタキシャル成長装置。
図2は、本発明によるエピタキシャル成長装置1を示している。また、図3は、エピタキシャル成長装置1におけるリフトピン15の周辺領域を示している。なお、図1と同じ構成には同じ符号が付されており、説明を省略する。図2および3に示すように、本発明によるエピタキシャル成長装置1は、サセプタ4よりも硬度が低い材料、すなわち柔らかい材料で構成されたリフトピン15を有しており、このリフトピン15は、サセプタ4の貫通孔4hおよび支持アーム17bの貫通孔17hに挿通され、鉛直方向に移動自在に配設されている。
なお、リフトピンの頭部15bの下面部は、サセプタ4の貫通孔4hの拡径部4wと接触するため、頭部15bの下面部の表面粗さは0.3μm以下にすることが好ましい。
表1に示す直胴部上部領域および直胴部下部領域の表面粗さを有する8水準のリフトピン(発明例1〜4、比較例1〜4)を作製した。その際、全てのリフトピンをガラス状カーボンで作製した。
作製した発明例1〜4および比較例1〜4のリフトピンのそれぞれを、図2に示したエピタキシャル成長装置1に適用し、サセプタ上にシリコンウェーハWを載置した状態でリフトピンを昇降動作させた場合に、動作に不具合が発生するか否かを確認する動作確認実験を行った。この動作確認実験は、エピタキシャル成長装置1の上部ドーム11を開放した室温状態で行い、動作不具合発生の確認は目視で行った。昇降動作の回数は100回とし、往復の動作を1回としてカウントした。
発明例1および2、並びに比較例1および2のリフトピンのそれぞれを図2に示したエピタキシャル成長装置1に適用して、エピタキシャルウェーハを製造した。ここで、サセプタ4は、カーボン基材の表面にSiCコートしたものを用いた。また、エピタキシャルウェーハの基板としては、ボロンがドープされた直径300mmのシリコンウェーハWを用いた。
得られたエピタキシャルウェーハについて、エピタキシャル層に形成されたエピタキシャル欠陥の数を評価した。具体的には、表面欠陥検査装置(KLA−Tencor社製:Surfscan SP−2)を用いてDWOモード(Dark Field Wide Obliqueモード:暗視野・ワイド・斜め入射モード)でエピタキシャル層表面を観察評価し、サイズ(直径)が0.25μm以上のLPD(Light Point Defect)の発生状況を調べた。この評価を、それぞれ50枚ずつ作製した発明例1および2、並びに比較例1および2のウェーハに対して行い、ウェーハ1枚当たりのLPDの個数を求めた。その結果、直胴部下部領域の表面粗さが1μmを超える発明例1および2については、突発的なLPD増加の発生が確認されず、リフトピンの昇降動作に不具合が発生しなかったものと推認できる。これら発明例1および2については、製造された全てのエピタキシャルウェーハにおいて、観察されたLPDの個数は1個/wf以下であった。
発明例1および2、並びに比較例1および2と同様に、発明例3および4、並びに比較例3および4のリフトピンを、図2に示したエピタキシャル成長装置1に適用してエピタキシャルウェーハを製造した。ここで、製造条件は、発明例1および2、並びに比較例1および2の場合と全て同じである。
2 チャンバー
4 サセプタ
4h,7h,17h 貫通孔
4s,17s 壁面
4w 拡径部
5,15 リフトピン
6 昇降シャフト
7 支持シャフト
7a,17a 主柱
7b,17b 支持アーム
11 上部ドーム
12 下部ドーム
13 ドーム取付体
14 加熱ランプ
15a 直胴部
15b 頭部
15c 直胴部下部領域
15d 直胴部上部領域
31 ガス供給口
32 ガス排出口
W シリコンウェーハ
Claims (8)
- チャンバーの内部に、シリコンウェーハを載置するサセプタと、該サセプタを下方から支持し、前記サセプタの中心と同軸上に位置する主柱と該主柱から放射状に延びる支持アームとを有する支持シャフトと、前記サセプタに設けられた貫通孔および前記支持アームに設けられた貫通孔の双方に挿通されて鉛直方向に移動自在に配設された、リフトピンとを備え、該リフトピンを昇降させて前記シリコンウェーハを前記サセプタ上に脱着させるエピタキシャル成長装置において、
前記リフトピンの少なくともその表層域は前記サセプタよりも硬度が低い材料で構成され、
前記サセプタの貫通孔内を通過する前記リフトピンの直胴部上部領域の表面粗さが0.1μm以上0.3μm以下であり、かつ、
前記支持アームの貫通孔内を通過する前記リフトピンの直胴部下部領域の表面粗さが1μm以上10μm以下であることを特徴とするエピタキシャル成長装置。 - 前記リフトピンの少なくともその表層域がガラス状カーボンからなり、前記サセプタは少なくともその表層域が炭化珪素(SiC)からなり、前記支持アームは石英からなる、請求項1に記載のエピタキシャル成長装置。
- 前記リフトピンの下端部が丸み加工されている、請求項1または2に記載のエピタキシャル成長装置。
- 請求項1〜3に記載のエピタキシャル成長装置を用いてシリコンウェーハ上にエピタキシャル膜を成長させることを特徴とするエピタキシャルウェーハの製造方法。
- シリコンウェーハ上にエピタキシャル層を気相成長させるエピタキシャル成長装置内に設置するサセプタに設けられた貫通孔および前記サセプタの下部を支持する支持アームに設けられた貫通孔の双方に挿通され、前記シリコンウェーハを前記エピタキシャル成長装置内に搬入する際または前記エピタキシャル成長装置から取り出す際に前記シリコンウェーハの裏面を支持して昇降されるリフトピンであって、
少なくとも表層域が前記サセプタよりも硬度が低い材料で構成され、かつ前記サセプタの貫通孔内を通過する前記リフトピンの直胴部上部領域の表面粗さよりも、前記支持アームの貫通孔内を通過する前記リフトピンの直胴部下部領域の表面粗さが大きいことを特徴とするエピタキシャル成長装置用リフトピン。 - 前記直胴部上部領域の表面粗さが0.1μm以上0.3μm以下であり、かつ、前記直胴部下部領域の表面粗さが1μm以上10μm以下である、請求項5に記載のエピタキシャル成長装置用リフトピン。
- 少なくとも表層域がガラス状カーボンからなる、請求項5または6に記載のエピタキシャル成長装置用リフトピン。
- 前記リフトピンの下端部が丸み加工されている、請求項5〜7のいずれか一項に記載のエピタキシャル成長装置用リフトピン。
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