TWI646614B - Heater power supply mechanism - Google Patents
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- TWI646614B TWI646614B TW104115486A TW104115486A TWI646614B TW I646614 B TWI646614 B TW I646614B TW 104115486 A TW104115486 A TW 104115486A TW 104115486 A TW104115486 A TW 104115486A TW I646614 B TWI646614 B TW I646614B
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- 230000007246 mechanism Effects 0.000 title claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 21
- 238000012423 maintenance Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B1/00—Details of electric heating devices
- H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
- H05B1/0227—Applications
- H05B1/023—Industrial applications
- H05B1/0233—Industrial applications for semiconductors manufacturing
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
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- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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- Resistance Heating (AREA)
- Control Of Resistance Heating (AREA)
Abstract
目的在於提供一種抑制與其他構件之干擾的加熱器供電機構。
提供一種加熱器供電機構,係使用複數加熱器來將載置基板之載置台區域化,而可依各區域來進行溫度控制之加熱器供電機構,具有:複數加熱器用端子,係連接於該複數加熱器;複數加熱器配線,係連接於該複數加熱器用端子;以及錯位構造,係使該複數加熱器配線錯位,該複數加熱器用端子係被配置於保持該載置台之保持板上的外周部。
Description
本發明係關於一種加熱器供電機構。
在藉由蝕刻等來將半導體晶圓(以下,稱為「晶圓」)微細加工的半導體製造裝置中,載置晶圓之載置台的溫度會對蝕刻速率等之程序結果造成影響。於是,便提議有在載置台內部埋設加熱器,而加熱加熱器來溫度控制載置台(例如,參照專利文獻1)。專利文獻1中,係對一個加熱器設置有一個加熱器供電部。
【先前技術文獻】
【專利文獻】
專利文獻1:日本特開2005-26296號公報
另外,藉由於載置台內部埋設複數加熱器,依各加熱器來區域化,而依各區域來進行控制載置台之溫度的「多區域控制」,便可提高載置台上之晶圓溫度的面內均勻性。然而,區域越增加,則加熱器之供電部的個數會與其成比例來增加,而使得加熱器之供電機構變得複雜。例如,將載置台劃分為40個區域,而為了多區域控制便需要至少40個加熱器供電部。因此,加熱器配線便會變得非常的多,而會與設置於半導體製造裝置的其他構件干擾,並在半導體製造裝置之組裝時或維護時產生不良狀況,或使得安裝時的工作量增大。
針對上述課題,在一面相中,其目的在於提供一種抑制與其他構件之干擾的加熱器供電機構。
為了解決上述課題,而根據一態樣,係提供一種加熱器供電機構,係使用複數加熱器來將載置基板之載置台區域化,而可依各區域來進行溫度控制的加熱器供電機構,具有:複數加熱器用端子,係連接於該複數加熱器;複數加熱器配線,係連接於該複數加熱器用端子;以及錯位構造,係使該複數加熱器配線錯位,該複數加熱器用端子係被配置於保持該載置台之保持板上的外周部。
根據一態樣,便可提供一種抑制與其他構件之干擾的加熱器供電機構。
1‧‧‧半導體製造裝置
10‧‧‧腔室
12‧‧‧載置台(下部電極)
13‧‧‧保持板
28‧‧‧排氣裝置
38‧‧‧噴淋頭(上部電極)
40‧‧‧靜電夾具
44‧‧‧交流電源
42‧‧‧直流電壓源
47、49‧‧‧供電線
71‧‧‧加熱器用端子
72‧‧‧加熱器配線
73‧‧‧錯位構造
73a‧‧‧殼體
73b‧‧‧殼體
74‧‧‧連接器
76‧‧‧電極用端子
77‧‧‧直流電流用配線
80‧‧‧集線部
100‧‧‧加熱器供電機構
As1、As2‧‧‧供電集合
圖1係顯示一實施形態相關之半導體製造裝置的縱剖面之圖式。
圖2係顯示含有一實施形態相關之供電集合As1的加熱器供電機構之一範例的縱剖面。
圖3(a)係顯示一實施形態相關之保持板上面,圖3(b)係顯示一實施形態相關之保持板下面,圖3(c)及圖3(d)係顯示一實施形態相關之加熱器供電機構的供電集合之圖式。
圖4係顯示含有一實施形態相關之供電集合As2之加熱器供電機構的一範例的縱剖面。
以下,便參照圖式來就用以實施本發明之形態來加以說明。另外,本說明書及圖式中,關於實質上相同之構成係藉由附加相同之符號來省略重複之說明。
[半導體製造裝置之整體構成]
首先,便參照圖1來就本發明一實施形態相關之半導體製造裝置1的整體構成來加以說明。圖1係顯示本發明一實施形態相關之半導體製造裝置1的縱剖面。本實施形態中,係舉電容耦合型電漿蝕刻裝置來作為半導體製造裝置1之一範例。
半導體製造裝置1係具有例如由表面經防蝕處理(陽極氧化處理)之鋁所構成的圓筒形腔室10。腔室10係接地。腔室10內部係設置有載置台12。載置台12係具有靜電夾具(ESC:Electrostatic Chuck)40,靜電夾具40(載置台12)係藉由保持板13來被加以保持。
靜電夾具40係將由導電膜所構成之電極40a夾設至一對絕緣層40b(或絕緣片)之間者。直流電壓源42係對應於開關43之控制並透過供電線49來將電流供給至電極40a。靜電夾具40係藉由來自直流電壓源42的電壓,而以庫倫力來將晶圓W吸附保持於靜電夾具上。
靜電夾具40係埋設有加熱器75a、75b、75c、75d(以下,亦總稱為「加熱器75」。)。加熱器75亦可貼附於靜電夾具40內面來取代埋設於靜電夾具40內。加熱器75係連接有加熱器供電機構100,並透過供電線47來連接於交流電源44。從交流電源44所輸出的電流會通過供電線47及加熱器供電機構100而供給至加熱器75a、75b、75c、75d。
加熱器供電機構100係可將載置台12區域化為複數加熱器75,而多區域控制載置台12之溫度。靜電夾具40之周緣部為了提高蝕刻之面內均勻性,係配置有例如由矽或石英所構成的聚焦環18。
載置台12內部係形成有未圖示之冷媒管線。從未圖示之冷卻單元所供給的冷媒會循環於冷媒管線。藉由相關構成,便可獨立溫度控制分別埋設有加熱器75的靜電夾具40之各區域,而藉此來將晶圓W調整至所欲之溫度。
加熱器供電機構100係具有複數加熱器用端子71、複數加熱器配線72以及使複數加熱器配線72錯位的錯位構造73。複數加熱器用端子71係連接於複數加熱器75。複數加熱器用端子71係被配置於保持載置台12的保持板13上之外周部。複數加熱器配線72係透過供電線47來連接於交流電源44。
本實施形態中,保持板13係由絕緣性構件所構成。但是,保持板13亦可由例如鋁(Al)或鈦(Ti),碳化矽(SiC)等之金屬所構成。保持板13係被絕緣性之支撐部14及基底板15所支撐。藉此,便會使得載置台12被固定至腔室10底部。
腔室10底部係設置有形成排氣口24之排氣管26,排氣管26係連接於排氣裝置28。排氣裝置28係由渦輪分子泵或乾式泵等之真空泵所構成,且會將腔室10內之處理空間減壓至既定真空度,並且將腔室10內氣體引導至排氣路徑20及排氣口24,而加以排氣。排氣路徑20係安裝有用以控制氣體流向之阻隔板22。
載置台12係透過匹配器33來連接有用以激發電漿之第1高頻電源31,且透過匹配器34來連接有用以將電漿中的離子吸引至晶圓W之第2高頻電源32。例如,第1高頻電源31係為了在腔室10內生成電漿而將適合之頻率,例如60MHz之高頻電力施加至載置台12。第2高頻電源32係將吸引電漿中之離子至載置台12上之晶圓W所適合的較低頻率,例如0.8MHz之高頻電力施加至載置台12。如此一來,載置台12便具有載置晶圓W並作為下部電極的機能。
腔室10頂部係設置有噴淋頭38來作為接地電位之上部電極。藉此,便可將來自第1高頻電源31之高頻電力電容性地施加至載置台12與噴淋頭38之間。
噴淋頭38係具有擁有多數氣體通氣孔56a之電極板56以及可裝卸自如地支撐電極板56的電極支撐體58。氣體供給源62係透過氣體供給配管64來從氣體導入口60a將氣體供給至噴淋頭38內。氣體係從多數氣體通氣孔56a來導入至腔室10內。腔室10周圍係配置有延伸為環狀或同心圓狀的磁鐵66,並藉由磁力來控制在上部電極及下部電極間之電漿生成空間所生成的電漿。
控制部48係具有未圖示的CPU、ROM(Read Only Memory)、RAM(Random Access Memory),並依照設定於RAM等所記憶的配方之順序,來控制蝕刻或靜電夾具40之溫度調整。另外,控制部48之機能係可使用軟體來實行,亦可使用硬體來實行。
相關構成之半導體製造裝置1中,係在進行蝕刻等之處理時,首先晶圓W會在被保持於未圖示之搬送臂上的狀態下,從已開口之閘閥30被搬入至腔室10內。晶圓W係在靜電夾具40上方藉由未圖示之推桿銷來被加以保持,並藉由下降推桿銷來載置於靜電夾具40上。閘閥30係在搬入晶
圓W後便關閉。腔室10內之壓力係藉由排氣裝置28來減壓至設定值。藉由將來自直流電壓源42之電壓施加至靜電夾具40之電極40a,便可將晶圓W靜電吸附於靜電夾具40上。
氣體會從噴淋頭38被噴淋狀地導入至腔室10內。被導入之氣體會藉由高頻電力來電離及解離,而生成電漿。藉由電漿之作用來對晶圓W進行電漿蝕刻等之處理。在電漿蝕刻結束後,晶圓W會被保持於搬送臂上,而被搬出至腔室10外部。藉由對複數晶圓W反覆上述處理來實行晶圓W之連續處理。
以上,便已就本實施形態相關之半導體製造裝置1的整體構成來加以說明。另外,上述實施形態中雖將5個加熱器75埋設於靜電夾具40內,但並不限定於此,加熱器75亦可設置於載置台12之任一處。又,加熱器75之個數只要為2個以上的話,不論幾個都可以。
通常,所分割之加熱器75個數越增加,則加熱器配線會變得越多,而與設置於半導體製造裝置1的其他構件干擾,並在半導體製造裝置1之組裝時或維護時容易產生不良狀況,而使得安裝時之工作效率變差。相對於此,根據本實施形態相關之加熱器供電機構100,即便加熱器75個數增加,仍不會與設置於半導體製造裝置1的其他構件干擾,且能迴避組裝時或維護時的不良狀況,而可得到提升工作效率之效果。以下,便參照圖2及圖3就本實施形態相關之加熱器供電機構100的構成來詳細地說明。
[加熱器供電機構]
圖2係顯示一實施形態相關之加熱器供電機構100的縱剖面之一範例。圖3(a)係顯示一實施形態相關之保持板13上面,圖3(b)係顯示一實施形態相關之保持板13下面。圖3(c)及圖3(d)係顯示一實施形態相關之加熱器供電機構100所具有的供電集合As1、As2。
如圖2及圖3所示,加熱器供電機構100係以複數個加熱器用端子71、連接於複數個加熱器用端子71的複數根加熱器配線72以及使複數根加熱器配線72錯位之錯位構造73為一組來加以集合化。圖3(a)係圖2之A-A面,且顯示保持板13上面。藉此,便可以複數個端子為一組,來將由溫度控制所需要之個數的加熱器用端子71與電極用端子76所構成之端子群配
置於保持板13之外周部。
配置有該端子群之保持板13上的外周部會對應於載置台12上未載置晶圓W之區域。藉此,本實施形態中,加熱器75之供電位置及靜電夾具40之電極的供電位置便會被配置於較沿加熱器配線72等所蔓延之線路要靠外側。因此,本實施形態中,加熱器配線72等之供電線路並非在各供電端子位置的正下方,而是在從各供電端子位置所錯開的位置。如此般,藉由將加熱器用端子71及電極用端子76配置在較靜電夾具40上載置有晶圓W的面要靠外側,便可成為來自加熱器用端子71等之焦耳熱不會對晶圓W造成影響之構造,而可提高晶圓W溫度的面內均勻性。藉此,即便在多區域控制靜電夾具40之溫度時增加加熱器用端子71之個數,仍可保持晶圓W溫度之面內均勻性。
錯位構造73係一邊錯開加熱器配線72,一邊將各加熱器配線72配置於所欲之位置(錯位)。加熱器配線72係連接於以複數個為一組的加熱器用端子71。經錯位之加熱器配線72係以設置於保持板13下部的集線部80(參照圖3(b))來加以集線。集線部80係用以將各錯位構造73之加熱器配線集線,而連接於連接器的樹脂殼體。以集線部80來集中之加熱器配線群係連接於連接器74。連接器74係連接於供電線47。連接器74之上部74a係連接於加熱器配線群,並藉由連結連接器74之上部74a與連接器74之下部74b,來讓設置於連接器74之下部74b的各端子74b1***至連接器74之上部74a。藉此,便可在靜電夾具40裝卸的同時進行連結。連接器74之個數係只要設置有1個以上的話,幾個都可以。又,連接器74並不限於圖3(b)所示之位置,亦可配置於集線部80周邊之任何位置。
(供電集合As)
圖3(c)及圖3(d)所示,加熱器供電機構100係具有2種供電集合As1、As2(以下,亦統稱為「供電集合As」)。如圖3(c)所示,供電集合As1係以複數個加熱器用端子71、複數根加熱器配線72及錯位構造73為一單位的集合。複數個加熱器用端子71會分別與連接於加熱器用端子71之複數根加熱器配線72所連接。複數根加熱器配線72係在殼體73a內部被錯位。殼體73a亦可以例如樹脂來加以構成。
如圖2所示,該供電集合As1中之錯位構造73中,係從殼體73a上部突出有複數個加熱器用端子71。複數根加熱器配線72係在殼體73a內部錯開而加以配線(錯位),並從殼體73a底部之所欲的位置朝外部輸出。加熱器配線72係透過集線部80、連接器74來連接於供電線47。藉此,來自交流電源44之電流便會透過供電線47、連接器74及加熱器配線72來從加熱器用端子71供給至加熱器75。
如圖3(d)所示,供電集合As2係以一個電極用端子76、除了電極用端子76以外的個數之加熱器用端子71、1根直流電流用配線77、連接於加熱器用端子71的複數根加熱器配線72及錯位構造73為一單位的集合。電極用端子76係連接於直流電流用配線77。各配線72、77係在殼體73b內部錯位。殼體73b亦可以例如樹脂來加以構成。
如圖4所示,該供電集合As2中之錯位構造73中,係從殼體73b上部突出有一個電極用端子76與除了電極用端子以外的個數之加熱器用端子71。1根直流電流用配線77及複數根加熱器配線72係在殼體73b內部錯開而加以配線(錯位),並從殼體73b底部之所欲的位置朝外部輸出。直流電流用配線77係透過集線部80來連接於供電線49。藉此,來自直流電壓源42之電流係透過供電線49及直流電流用配線77來供給至電極用端子76。又,複數根加熱器配線72係透過集線部80、連接器74來連接於供電線47。
圖3(b)係圖2之B-B面,並顯示保持板13下面。本實施形態中,係在組裝有11個供電集合As1及1個供電集合As2的狀態下,藉由熔接等來固定於保持板13內。藉此,供電集合As1、As2便會被收納至保持板13內之既定位置。如此一來,保持板13下面便會從11個供電集合As1與1個供電集合As2來輸出有連接於溫度控制所需要之個數的加熱器用端子71之加熱器配線72以及連接於電極用端子76的直流電流用配線77,並在保持板13下之集線部80集中。集線部80係形成為略環狀,並將各配線集線在樹脂殼體內而延展至連接器74,並連接於連接器74。
例如,如圖2及圖4所示,保持板13與基底板15之間係成為空間。該空間係收納有在搬入及搬出時升降保持晶圓W之推桿銷或溫度計等的構件(例如,於圖4顯示為構件Pt。)。
在獨立控制靜電夾具40之溫度的區域增加時,便會需要依各區域來設置1個或2個以上的加熱器,而對應於此,加熱器配線72便會變得非常的多。在加熱器配線72成為多數根時,便會與設置於半導體製造裝置1的其他構件干擾,而在半導體製造裝置1之組裝時或維護時產生不良狀況,或是使得安裝時之工作量增大。
相對於此,根據本實施形態相關之加熱器供電機構100,便可依各供電集合As1、As2來使加熱器配線72及直流電流用配線77錯位。又,經錯位之加熱器配線72及直流電流用配線77係在集線部來加以集線,並連接於連接器74等。
藉此,便可減少加熱器配線72及直流電流用配線77與其他構件Pt之干擾,並迴避在半導體製造裝置1組裝時或維護時產生不良狀況。
又,在先組裝好供電集合As1、As2的狀態下,便會將供電集合As1、As2從下方裝設於保持板13之既定位置。藉此,便能使得加熱器供電機構之組裝工序縮短化,並可簡單地連接配線。藉此,便可提高加熱器供電機構之組裝時或維護時之工作效率。
進一步地,加熱器用端子71係被配置於靜電夾具40上較載置有晶圓W的面要靠外側。藉此,便可使得來自加熱器用端子71之焦耳熱不會對晶圓W造成影響,而可提高晶圓W溫度之面內均勻性。特別是,藉由靜電夾具40溫度之多區域控制,即便在加熱器用端子71之個數有跳躍性地增加的情況,仍可保持晶圓W溫度之面內均勻性。
以上,雖已藉由上述實施形態來說明加熱器供電機構,但本發明相關之加熱器供電機構並不限定於上述實施形態,而可在本發明之範圍內有各種變形及改良。又,亦可在不矛盾之範圍內組合上述實施形態。
例如,上述實施形態相關之加熱器供電機構100係依各加熱器來將靜電夾具40區域化而進行溫度控制。但是,本發明相關之加熱器供電機構並不限於此,亦可在靜電夾具40以外之構件(例如,保持板13)埋設複數加熱器,而依各加熱器來區域化,以多區域控制保持板13之溫度。
又,本發明相關之加熱器供電機構100的供電集合As1、As2係具有複數個加熱器用端子71、複數根加熱器配線72以及使複數根加熱器配線72
錯位之錯位構造73。然而,本發明相關之加熱器供電機構的供電集合並不限於此,亦可具有2個以上的加熱器用端子71、2個以上的加熱器配線72以及使2個以上的加熱器配線72錯位之錯位構造73。
又,本發明相關之加熱器供電機構不僅為電容耦合型電漿(CCP:Capacitively Coupled Plasma)裝置,亦可適用於其他半導體製造裝置。其他半導體製造裝置亦可為使用感應耦合型電漿(ICP:Inductively Coupled Plasma)、輻線槽形天線之CVD(Chemical Vapor Deposition)裝置,螺旋波激發型電漿(HWP:Helicon Wave Plasma)裝置,電子迴旋共振電漿(ECR:Electron Cyclotron Resonance Plasma)裝置等。
又,使用本發明相關之加熱器供電機構而以半導體製造裝置所處理之基板並不限於晶圓,亦可為例如,平面顯示器(Flat Panel Display)用之大型基板、EL元件或太陽能電池用之基板。
Claims (8)
- 一種加熱器供電機構,係使用複數加熱器來將載置基板之載置台區域化,而可依各區域來進行溫度控制之加熱器供電機構,其係具有:複數加熱器用端子,係連接於該複數加熱器;複數加熱器配線,係連接於該複數加熱器用端子;以及錯位構造,係使該複數加熱器配線錯位;該複數加熱器用端子係被配置於為保持該載置台之保持板上的外周部,且會較該基板、該加熱器以及該加熱器配線要靠外側。
- 如申請專利範圍第1項之加熱器供電機構,其係具有:集線部,係將以該錯位構造而錯位後之複數加熱器配線加以集中;連接器,係與以該集線部所集中之該複數加熱器配線連接。
- 如申請專利範圍第1項之加熱器供電機構,其中該錯位構造係在組裝為以既定個數之加熱器用端子及既定根之加熱器配線為一單位的集合狀態下,來被裝設於該保持板。
- 如申請專利範圍第2項之加熱器供電機構,其中該錯位構造係在組裝為以既定個數之加熱器用端子及既定根之加熱器配線為一單位的集合狀態下,來被裝設於該保持板。
- 如申請專利範圍第1至4項中任一項之加熱器供電機構,其中該錯位構造係在組裝為以含有電極用端子與加熱器用端子之既定個數的端子,以及含有直流電流用配線與加熱器配線之既定根的配線為一單位的集合狀態下,來被裝設於該保持板。
- 如申請專利範圍第1至4項中任一項之加熱器供電機構,其中該載置台係具有靜電夾具,該複數加熱器係被設置於該靜電夾具。
- 如申請專利範圍第1至4項中任一項之加熱器供電機構,其中配置有該複數加熱器用端子之該保持板上的外周部會對應於該載置台上未載置基板之區域。
- 如申請專利範圍第1至4項中任一項之加熱器供電機構,其中該保持板係藉由絕緣性構件所構成。
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- 2015-05-08 KR KR1020167029093A patent/KR102330245B1/ko active IP Right Grant
- 2015-05-08 US US15/300,349 patent/US20170140958A1/en not_active Abandoned
- 2015-05-08 WO PCT/JP2015/063286 patent/WO2015178222A1/ja active Application Filing
- 2015-05-08 CN CN201580020523.5A patent/CN106233435B/zh active Active
- 2015-05-15 TW TW104115486A patent/TWI646614B/zh active
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2021
- 2021-08-11 US US17/399,055 patent/US11756806B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001057370A (ja) * | 1999-03-04 | 2001-02-27 | Applied Materials Inc | 基板支持台内部の温度勾配を減少させる方法及び装置 |
US20020185487A1 (en) * | 2001-05-02 | 2002-12-12 | Ramesh Divakar | Ceramic heater with heater element and method for use thereof |
JP2003146770A (ja) * | 2001-07-09 | 2003-05-21 | Ibiden Co Ltd | セラミック接合体 |
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Publication number | Publication date |
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WO2015178222A1 (ja) | 2015-11-26 |
JP2015220368A (ja) | 2015-12-07 |
KR102400032B1 (ko) | 2022-05-19 |
CN106233435A (zh) | 2016-12-14 |
US20170140958A1 (en) | 2017-05-18 |
CN106233435B (zh) | 2019-07-05 |
KR20210144930A (ko) | 2021-11-30 |
JP6219229B2 (ja) | 2017-10-25 |
KR102330245B1 (ko) | 2021-11-23 |
TW201613013A (en) | 2016-04-01 |
US20210366741A1 (en) | 2021-11-25 |
KR20170003917A (ko) | 2017-01-10 |
US11756806B2 (en) | 2023-09-12 |
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