TWI611035B - 成膜裝置及數據製作方法 - Google Patents

成膜裝置及數據製作方法 Download PDF

Info

Publication number
TWI611035B
TWI611035B TW105120896A TW105120896A TWI611035B TW I611035 B TWI611035 B TW I611035B TW 105120896 A TW105120896 A TW 105120896A TW 105120896 A TW105120896 A TW 105120896A TW I611035 B TWI611035 B TW I611035B
Authority
TW
Taiwan
Prior art keywords
film
film formation
correspondence relationship
color
correspondence
Prior art date
Application number
TW105120896A
Other languages
English (en)
Chinese (zh)
Other versions
TW201723208A (zh
Inventor
Atsushi Osawa
Original Assignee
Screen Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Publication of TW201723208A publication Critical patent/TW201723208A/zh
Application granted granted Critical
Publication of TWI611035B publication Critical patent/TWI611035B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW105120896A 2015-09-28 2016-07-01 成膜裝置及數據製作方法 TWI611035B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015190106A JP6600519B2 (ja) 2015-09-28 2015-09-28 成膜装置およびデータ作成方法

Publications (2)

Publication Number Publication Date
TW201723208A TW201723208A (zh) 2017-07-01
TWI611035B true TWI611035B (zh) 2018-01-11

Family

ID=58417311

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105120896A TWI611035B (zh) 2015-09-28 2016-07-01 成膜裝置及數據製作方法

Country Status (3)

Country Link
JP (1) JP6600519B2 (ja)
CN (1) CN106555164B (ja)
TW (1) TWI611035B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6900114B2 (ja) * 2017-03-29 2021-07-07 株式会社大一商会 遊技機
JP6583930B2 (ja) * 2017-11-15 2019-10-02 キヤノントッキ株式会社 スパッタ装置および有機ｅｌパネルの製造方法
KR102180440B1 (ko) * 2018-05-18 2020-11-18 (주)이노시아 스퍼터링 장치 및 스퍼터링 방법
CN113248157B (zh) * 2021-06-17 2022-06-07 徐州联超光电科技有限公司 一种光学玻璃的镀膜工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004285412A (ja) * 2003-03-20 2004-10-14 Dainippon Printing Co Ltd 光学機能性フィルムの製造方法及び製造装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772307A (ja) * 1993-09-03 1995-03-17 Canon Inc 薄膜形成方法及び装置
JP3848571B2 (ja) * 2001-12-28 2006-11-22 Ｈｏｙａ株式会社 薄膜形成方法及び装置
JP2006071402A (ja) * 2004-09-01 2006-03-16 Toppan Printing Co Ltd 多層膜の膜厚制御方法及び成膜装置
CN100594254C (zh) * 2008-05-21 2010-03-17 兰州大学 薄膜制备装置及薄膜生长的观察方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004285412A (ja) * 2003-03-20 2004-10-14 Dainippon Printing Co Ltd 光学機能性フィルムの製造方法及び製造装置

Also Published As

Publication number Publication date
CN106555164B (zh) 2019-04-05
JP6600519B2 (ja) 2019-10-30
CN106555164A (zh) 2017-04-05
JP2017066439A (ja) 2017-04-06
TW201723208A (zh) 2017-07-01

Similar Documents

Publication Publication Date Title
TWI611035B (zh) 成膜裝置及數據製作方法
JP2015193863A (ja) スパッタリング装置
US20150211124A1 (en) Film forming apparatus
TWI614358B (zh) 成膜裝置及層疊體
JP6373708B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP2007231303A (ja) 薄膜形成装置
US20150176117A1 (en) Interchangeable Sputter Gun Head
JPH0773997A (ja) プラズマｃｖｄ装置と該装置を用いたｃｖｄ処理方法及び該装置内の洗浄方法
JP6309353B2 (ja) スパッタリング装置およびスパッタリング方法
JP2019059988A (ja) 成膜装置および成膜方法
CN106637114B (zh) 一种团簇束流实验装置及纳米团簇的制备方法
TWI602215B (zh) 具有塑形工件支架的環形電漿處理設備
KR20160115717A (ko) 스퍼터링 장치 및 스퍼터링 방법
JP2017066427A (ja) 成膜装置
TWI581354B (zh) 電漿處理裝置
JP6957270B2 (ja) 成膜装置および成膜方法
JP2018053297A (ja) プラズマ発生装置の制御方法、プラズマ発生装置および成膜装置
US11220747B2 (en) Complementary pattern station designs
JP6959966B2 (ja) 成膜装置および成膜方法
CN113061857B (zh) 一种离子辅助、倾斜溅射、反应溅射沉积薄膜的方法及设备
JP2004027264A (ja) スパッタリング方法及び装置
WO2023248347A1 (ja) プラズマ処理装置および加熱装置
JP2015189985A (ja) 成膜装置、成膜方法、制御信号の生成方法、および制御信号の生成装置
TW202247711A (zh) 用於空間電漿增強原子層沉積（pe-ald）處理工具的微波電漿源
WO2018055878A1 (ja) 成膜方法および成膜装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees