TWI506688B - 壓感黏著片於半導體晶圓保護之應用方法及用於該應用方法之半導體晶圓保護用壓感黏著片 - Google Patents

壓感黏著片於半導體晶圓保護之應用方法及用於該應用方法之半導體晶圓保護用壓感黏著片 Download PDF

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Publication number
TWI506688B
TWI506688B TW099110428A TW99110428A TWI506688B TW I506688 B TWI506688 B TW I506688B TW 099110428 A TW099110428 A TW 099110428A TW 99110428 A TW99110428 A TW 99110428A TW I506688 B TWI506688 B TW I506688B
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Taiwan
Prior art keywords
sensitive adhesive
pressure
semiconductor wafer
adhesive sheet
interlayer
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TW099110428A
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English (en)
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TW201044452A (en
Inventor
Noriyoshi Kawashima
Fumiteru Asai
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Nitto Denko Corp
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  • Engineering & Computer Science (AREA)
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  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

壓感黏著片於半導體晶圓保護之應用方法及用於該應用方法之半導體晶圓保護用壓感黏著片
本發明係關於一種將一半導體晶圓保護用壓感黏著片應用於一具有表面不平整性之半導體晶圓之方法，且本發明亦係關於一種用於該應用方法之半導體晶圓保護用壓感黏著片。
當一因結構(諸如凸塊)而具有表面不平整性之半導體晶圓經受背側研磨時，必須保護晶圓之正側以防止損壞存在於晶圓正側上之不平整性並防止晶圓研磨粉屑、研磨水等污染該晶圓正側。亦存在一問題：即使用一輕微外力亦因經研磨晶圓本身較薄且易碎且因晶圓正側具有表面不平整性而易使經研磨晶圓破損。
吾人已知一項技術，其中為達在晶圓背側研磨期間保護晶圓正側並防止晶圓破損之目的而將一壓感黏著帶應用於一半導體晶圓之正側。例如，專利文件1建議一採用一範圍在-5℃至80℃之溫度下具有一0.5或更大之最大損耗正切(tanδ)值的基板之壓感黏著片。然而，由於最近半導體封裝之厚度減小，所以存在一漸增將半導體晶圓研磨至一不大於晶圓之正側上所形成之不平整性位差的厚度之趨勢。因此，此一壓感黏著片之所需性能包含在應用於一晶圓之正側期間不平整性之符合性及在晶圓背側研磨後所需之運送適合性、固持性等。
專利文件1：JP-A-11-343469
本發明之一目的在於提供一種一壓感黏著片於半導體晶圓保護之應用方法，當將一正側上形成不平整性之晶圓的背側研磨至一不大於該等不平整性之位差的厚度時，該半導體晶圓保護用壓感黏著片能夠保護晶圓正側之不平整性、防止研磨粉屑、研磨水及其他物質侵入晶圓正側並防止經研磨晶圓受破損。本發明之另一目的在於提供一種用於該應用方法之半導體晶圓保護用壓感黏著片。
換言之，本發明提供一種一壓感黏著片於半導體晶圓保護之應用方法，該方法包含將一包含依序疊置之一基板、至少一夾層及一壓感黏著層的半導體晶圓保護用壓感黏著片應用於一半導體晶圓之表面，其中該壓感黏著片係在一範圍在50℃至100℃之應用溫度下應用於該半導體晶圓且在該應用溫度下與該壓感黏著層接觸之該夾層具有一0.5或更大之損耗正切(tanδ)。
在將半導體晶圓保護用壓感黏著片(以下稱為壓感黏著片)應用於一半導體晶圓時之應用溫度為50℃至100℃。在該應用溫度下與壓感黏著層接觸之夾層之損耗正切(tanδ)為0.5或更大，且較佳為0.5至2.5。當與壓感黏著層接觸之夾層之損耗正切(tanδ)係在該範圍內時，在將壓感黏著片應用於一半導體晶圓之溫度下夾層係軟的。因此，當將此壓感黏著片應用於晶圓之正側時，其令人滿意地符合存在於晶圓正側上之不平整性。因此，增強壓感黏著片與半導體晶圓間之黏著性，藉此可防止在晶圓背側研磨期間損壞 存在於晶圓正側上之不平整性，且可防止在晶圓背側研磨期間研磨粉屑及研磨水侵入晶圓正側。
根據本發明，在應用溫度下與壓感黏著層接觸之夾層(位於與壓感黏著層接觸之側上之夾層)較佳具有一0.005兆帕(MPa)至0.5兆帕之損耗模量。
在應用溫度下與壓感黏著層接觸之夾層之損耗模量較佳為0.005兆帕至0.5兆帕，更佳為0.01兆帕至0.4兆帕，最佳為0.015兆帕至0.3兆帕。當在應用溫度下與本發明壓感黏著層接觸之夾層之損耗模量係在該範圍內時，夾層易伸展且當將壓感黏著片應用於晶圓之正側時符合晶圓正側不平整性。因此，可阻止已應用於晶圓之正側的壓感黏著片自晶圓之正側脫離。因此，可防止晶圓背側研磨期間發生晶圓破損及研磨粉屑或研磨水侵入晶圓正側。
根據本發明，在23℃下與壓感黏著層接觸之夾層較佳亦具有0.5兆帕或更高之儲存模量。
在23℃下，與壓感黏著層接觸之夾層之儲存模量較佳為0.5兆帕或更高，更佳為0.7兆帕至5兆帕，最佳為0.8兆帕至3兆帕。在23℃下與本發明壓感黏著層接觸之夾層之儲存模量係在該範圍內時，可防止欲在將壓感黏著片應用於晶圓之正側後進行之晶圓背側研磨期間與壓感黏著層接觸之夾層因一施加於壓感黏著片之壓力而凸出。因此，壓感黏著片可適當固持晶圓並因此可阻止晶圓在晶圓背側研磨期間破損。
根據本發明，當壓感黏著片包含複數個夾層時，與壓感黏著層接觸之夾層之厚度進一步較佳係佔該等夾層之總厚度的至少50%。
與壓感黏著層接觸之夾層之厚度較佳係佔該等夾層之總厚度的至少50%，更佳為至少55%，最佳為至少60%。在與壓感黏著層接觸之夾層之厚度在該範圍內之情況下，壓感黏著片在應用於一晶圓之正側時對存在於晶圓正側上之不平整性展現更佳符合性。另外，因為此夾層係充當一緩衝層以緩衝一晶圓背側研磨期間欲施加之壓力，所以可阻止損壞晶圓正側上之不平整性並可阻止晶圓破損。
根據本發明，基板較佳為聚酯膜。
由運送半導體晶圓(其在晶圓之背側研磨之後已變薄且易碎)之觀點，較佳係使用具有高剛度之聚酯膜。當聚酯膜係用作為基板時，因為基板具有高剛度且無黏性，所以可阻止此基板在晶圓背側研磨完成之後黏在夾頭工作台上。
根據本發明，基板較佳具有一10微米至150微米之厚度。
基板之厚度較佳為10微米至150微米，更佳為15微米至125微米，最佳為20微米至100微米。在基板之厚度係在該範圍內之情況下，壓感黏著片在已纏繞成一輥形式後具有高形狀穩定性。在基板之厚度小於10微米之情況下，此壓感黏著層在已纏繞成一輥形式後較不易展現出令人滿意之形狀保持性。在基板之厚度大於150微米之情況下，則脫模片易在壓感黏著片已纏繞成一輥之後剝離。
將用在本發明之半導體晶圓保護用壓感黏著片詳細解釋於下並根據需要參考圖式。圖1及圖2各為繪示一根據本發明已應用於一半導體晶圓之正側之半導體晶圓保護用壓感黏著片的圖解視圖。
圖1中所示之半導體晶圓保護用壓感黏著片4為一應用於一半導體晶圓6之一電路承載表面5的壓感黏著片，且其係由已依序自該電路承載表面5側排列之一壓感黏著層3、一夾層2及一基板1組成。
壓感黏著層3可由一共用壓感黏著劑構成。其實例包含丙烯酸系單體之共聚物(丙烯酸系壓感黏著劑)、矽酮類壓感黏著劑及基於橡膠之壓感黏著劑。可使用一種壓感黏著劑或使用兩種或更多種壓感黏著劑之混合物。
特佳為使用丙烯酸系壓感黏著劑作為壓感黏著層3。當壓感黏著層3係由丙烯酸系壓感黏著劑形成時，此壓感黏著片可在研磨後自晶圓表面剝離，同時減少晶圓表面受壓感黏著劑污染。壓感黏著層3之厚度較佳為5微米至60微米，更佳為10微米至55微米，最佳為15微米至50微米。當壓感黏著層3之厚度係在該範圍內時，壓感黏著片對電路承載表面5之不平整性具有獲改良之符合性。
構成壓感黏著劑之聚合物可具有一交聯結構。此一聚合物係藉由在交聯劑的存在下聚合包含一具有官能基(諸如羧基、羥基、環氧基或胺基)之單體(例如丙烯酸系單體)的單體混合物獲得。一包含一壓感黏著層(其含有一具有一交聯結構的聚合物)之壓感黏著片具有獲改良之自固持性。因此，可防止此壓感黏著片變形且可使其保持在一平坦狀態。因此，可用(例如)一自動施用器將此壓感黏著片精確且容易地應用於一半導體晶圓。
紫外線可固化型之壓感黏著劑亦可用作壓感黏著劑。此壓感黏著劑係(例如)藉由將一在以紫外線照射後固化以形成一低黏著物質的寡聚物成分併入一壓感黏著物質中而獲得。使用一由一紫外線可固化型之壓感黏著劑構成之壓感黏著層具有以下優點。當應用壓感黏著片時有助於應用，因為寡聚物成分賦予該壓感黏著劑塑膠流動性。另外，當壓感黏著片剝離時，紫外線照射產生一低黏著物質且此有助於自晶圓之剝離。
用於壓感黏著劑之主要單體之實例包含丙烯酸甲酯、甲基丙烯酸甲酯、丙烯酸乙酯、甲基丙烯酸乙酯、丙烯酸丁酯、甲基丙烯酸丁酯、丙烯酸2-乙基己酯及甲基丙烯酸2-乙基己酯。可單獨使用此等單體，或可使用其等之兩種或多種之混合物。就欲使用此等主要單體之量而言，該等主要單體之含量一般較佳係基於所有單體(其等用作為壓感黏著聚合物之原料)之總量在60重量%至99重量%之範圍內。
具有與交聯劑反應之官能基且與主要單體共聚合的共聚單體之實例包含丙烯酸、甲基丙烯酸、衣康酸、甲基反丁烯二酸、檸康酸、反丁烯二酸、順丁烯二酸、衣康酸之單烷基酯、甲基反丁烯二酸之單烷基酯、檸康酸之單烷基酯、反丁烯二酸之單烷基酯、順丁烯二酸之單烷基酯、丙烯酸2-羥乙基酯、甲基丙烯酸2-羥乙基酯、丙烯醯胺、甲基丙烯醯胺、丙烯酸第三丁基胺基乙基酯及甲基丙烯酸第三丁基胺基乙基酯。此等之一者可與主要單體共聚合，或其等之兩種或多種可共聚合。就欲使用具有與交聯劑反應之官能基的共聚單體之量而言，共聚單體之含量一般較佳係基於所有單體(其等係用作為壓感黏著聚合物之原料)之總量在1重量%至40重量%之範圍內。
由晶圓固持性、自晶圓之可釋放性、無污染晶圓表面之特性等觀點，夾層2較佳含有至少一熱塑性樹脂。可含有一種熱塑性樹脂，或可組合地使用兩種或更多種熱塑性樹脂。
熱塑性樹脂之典型實例包含：聚乙烯(PE)；聚丁烯；乙烯共聚物，諸如乙烯/丙烯共聚物(EPM)、乙烯/丙烯/二烯共聚物(EPDM)、乙烯/丙烯酸乙基酯共聚物(EEA)、乙烯/丙烯酸乙基酯/順丁烯二酸酐共聚物(EEAMAH)、乙烯/甲基丙烯酸縮水甘油酯共聚物(EGMA)、乙烯/甲基丙烯酸共聚物(EMAA)及乙烯/乙酸乙烯酯共聚物(EVA)；聚烯烴共聚物；熱塑性彈性體，諸如基於丁二烯之彈性體、乙烯/異戊二烯彈性體及基於酯之彈性體；熱塑性聚酯；聚醯胺樹脂，諸如聚醯胺-12；聚胺基甲酸酯；聚苯乙烯樹脂；賽璐玢；丙烯酸系樹脂，諸如聚(丙烯酸酯)及聚(甲基丙烯酸甲酯)；及聚(氯乙烯)樹脂，諸如氯乙烯/乙酸乙烯酯共聚物。
熱塑性樹脂具有一較佳在20,000至30,000、更佳30,000至250,000之範圍內之重量平均分子量。
夾層2可含有其他成分，只要其併入不損及性質。此等成分之實例包含增黏劑、可塑劑、軟化劑、填充劑及抗氧化劑。雖然壓感黏著片可包含單一夾層，但其可包含複數個同種或不同種之夾層。
構成基板1之材料之實例包含聚酯，諸如聚(對苯二甲酸乙二酯)(PET)及聚(萘二甲酸乙二酯)(PEN)。此等材料中之一種或其等之兩種或更多種之組合可用作為基板1。基板1可具有一由複數個同種或不同種之層組成的多層結構。
由運送半導體晶圓(其在晶圓之背側研磨後已變薄且易碎)之觀點，最佳為使用具有高剛度的聚酯膜作為基板1。當聚酯膜係用作為基板時，因為基板具有高剛度且無黏性，所以可阻止此基板在晶圓背側研磨完成後黏在夾頭工作台上。
本發明之半導體晶圓保護用壓感黏著片4係藉由生產一含一夾層2的基板1之層壓板且接著在該層壓板之夾層2側表面上形成一壓感黏著層3產生。用於形成一含一夾層2之基板1之層壓板的方法之實例包含：一方法，其中一呈膜形式之夾層2係藉由一擠出機擠出成形產生並同時藉由擠出成形將夾層2層壓至一已預先製得之基板1上；一方法，其中共擠出一基板1及一夾層2。共擠出技術之實例包含T模擠出法及膨脹法。用於在夾層2側之表面上形成一壓感黏著層3的方法之實例包含：一方法，其中一壓感黏著組分係應用於一脫模膜之一表面並經乾燥以形成一壓感黏著層3，且接著將所獲得之壓感黏著層3轉移至層壓板之夾層2側表面；及一方法，其中一壓感黏著組分係應用於層壓板之夾層2側表面並經乾燥以形成一壓感黏著層3。
為達增強基板1與夾層2間之黏著力之目的，可於其間新安置一黏著層。較佳使欲形成一壓感黏著層3的夾層2側經受一電暈處理、化學處理等以增強夾層2與壓感黏著層3間之黏著力。此外，一底塗層可安置於夾層2與壓感黏著層3之間。
可藉由手風琴式折疊法折疊本發明之半導體晶圓保護用壓感黏著片4，或可將其纏繞成一輥形式。
本發明之半導體晶圓保護用壓感黏著片4係適用在一正側上具有高度為100微米至300微米之凸塊的半導體晶圓之背側研磨中。
一脫模膜可安置在壓感黏著層3上以達保護壓感黏著層3之目的。該脫模膜之實例包含：塑膠膜(例如聚(對苯二甲酸乙二酯)、聚丙烯及聚乙烯)或已經矽酮處理或含氟化合物處理的紙片；及非極性材料(尤其是非極性聚合物)，諸如聚乙烯及聚丙烯。
圖2中所示作為本發明之另一實施例之半導體晶圓保護用壓感黏著片4係一應用於一半導體晶圓6之電路承載表面5的壓感黏著片且由依序自該電路承載表面5側配置之一壓感黏著層3、一夾層2、一第二夾層7及一基板1組成。
安置於基板1與夾層2間之第二夾層7係用以聯結基板1與夾層2。構成第二夾層7的材料實例包含低密度聚乙烯樹脂(LDPE)。
實例
本發明將藉參考實例更詳細地解釋於下，但本發明不應被解釋為受下列實例限制。
實例1
分別地，聚(對苯二甲酸乙二酯)用作為一基板之樹脂且乙烯/乙酸乙烯酯共聚物樹脂A(EVA)用作為一夾層之熱塑性樹脂以藉由一層壓法生產一含一夾層(厚度：450微米)的一基板(厚度：38微米)之層壓板。隨後，令欲形成一壓感黏著層的夾層之表面經受一電暈處理，且將一壓感黏著層A(厚度：30微米)轉移至夾層之經電暈處理表面。在該轉移後，在45℃下加熱所得多層結構24小時且接著將其冷卻至室溫以藉此獲得一半導體晶圓保護用壓感黏著片。而後，將此壓感黏著片加熱至65℃並將其應用於各半導體晶圓之正側。檢驗所應用之壓感黏著片之空隙。隨後，令半導體晶圓經受背側研磨。因此，已破損之晶圓數目為0/10。遭受研磨水侵入之晶圓數目為0/10。在65℃下，夾層具有0.64之tanδ及0.02兆帕之損耗模量。在23℃下，夾層具有1.5兆帕之儲存模量。
實例2
分別地，聚(對苯二甲酸乙二酯)用作為一基板之樹脂且乙烯/乙酸乙烯酯共聚物樹脂A(EVA)用作為一夾層之熱塑性樹脂以藉由一層壓法生產一含一夾層(厚度：390微米)的一基板(厚度：50微米)之層壓板。隨後，令欲形成一壓感黏著層的夾層之表面經受一電暈處理，且將一壓感黏著層A(厚度：40微米)轉移至夾層之經電暈處理表面。在該轉移後，在45℃下加熱所得多層結構24小時且接著將其冷卻至室溫以藉此獲得一半導體晶圓保護用壓感黏著片。而後，將此壓感黏著片加熱至60℃並將其應用於各半導體晶圓之正側。檢驗所應用之壓感黏著片之空隙。隨後，令半導體晶圓經受背側研磨。因此，已破損之晶圓數目為0/10。遭受研磨水侵入之晶圓數目為0/10。在60℃下，夾層具有0.54之tanδ及0.07兆帕之損耗模量。在23℃下，夾層具有1.5兆帕之儲存模量。
實例3
分別地，聚(對苯二甲酸乙二酯)用作為一基板之樹脂且乙烯/丙烯/二烯樹脂(EPDM)用作為一夾層之熱塑性樹脂以藉由一層壓法生產一含一夾層(厚度：450微米)的基板(厚度：38微米)之層壓板。隨後，令欲形成一壓感黏著層的夾層之表面經受一電暈處理，且將一壓感黏著層A(厚度：40微米)轉移至夾層之經電暈處理表面。在該轉移後，在45℃下加熱所得多層結構24小時且接著將其冷卻至室溫以藉此獲得一半導體晶圓保護用壓感黏著片。而後，將此壓感黏著片加熱至50℃並將其應用於各半導體晶圓之正側。檢驗所應用之壓感黏著片之空隙。隨後，令半導體晶圓經受背側研磨。因此，已破損之晶圓數目為0/10。遭受研磨水侵入之晶圓數目為0/10。在50℃下，夾層具有1.6之tanδ及0.03兆帕之損耗模量。在23℃下，夾層具有0.90兆帕之儲存模量。
實例4
分別地，聚(對苯二甲酸乙二酯)用作為一基板之樹脂且聚乙烯(PE)用作為一夾層之熱塑性樹脂，以藉由層壓法生產基板(厚度：38微米)與夾層(厚度：450微米)的層壓板。隨後，令該夾層欲形成壓感黏著層之表面經受電暈處理，且將一壓感黏著層A(厚度：40微米)轉移至夾層之經電暈處理表面。在該轉移後，在45℃下加熱所得多層結構24小時且接著將其冷卻至室溫，以藉此獲得一半導體晶圓保護用壓感黏著片。而後，將此壓感黏著片加熱至80℃並將其應用於各半導體晶圓之正側。檢驗所應用之壓感黏著片之空隙。隨後，半導體晶圓經受背側研磨。因此，已破損之晶圓數目為0/10。遭受研磨水侵入之晶圓數目為0/10。在80℃下，夾層具有0.58之tanδ及0.07兆帕之損耗模量。在23℃下，夾層具有2.8兆帕之儲存模量。
實例5
聚(對苯二甲酸乙二酯)用作為一基板之樹脂且低密度聚乙烯樹脂(LDPE)用作為第二夾層之材料。此外，乙烯/乙酸乙烯酯共聚物樹脂(EVA)用作為一夾層之熱塑性樹脂。將錨定塗覆材料應用於基板之一側並經乾燥，熔融擠出低密度聚乙烯樹脂並將其層壓至經錨定塗覆側。而後，擠出乙烯/乙酸乙烯酯共聚物樹脂並將其應用於低密度聚乙烯層，以藉此生產一由基板(厚度：50微米)、一第二夾層(厚度：15微米)及一夾層(厚度：450微米)組成的層壓板。隨後，令欲形成一壓感黏著層的夾層之表面經受一電暈處理，且將一壓感黏著層A(厚度：30微米)轉移至夾層之經電暈處理表面。在該轉移後，在45℃下加熱所得多層結構24小時且接著將其冷卻至室溫以藉此獲得一半導體晶圓保護用壓感黏著片。而後，將此壓感黏著片加熱至65℃並將其應用於各半導體晶圓之正側。檢驗所應用之壓感黏著片之空隙。隨後，半導體晶圓經受背側研磨。因此，已破損之晶圓數目為0/10。遭受研磨水侵入之晶圓數目為0/10。在65℃下，夾層具有0.64之tanδ及0.02兆帕之損耗模量。在23℃下，夾層具有1.5兆帕之儲存模量。
比較例1
除了基板之厚度改為50微米且壓感黏著層A之厚度改為40微米之外，以與實例1相同之方式生產一壓感黏著片。而後，將此壓感黏著片加熱至40℃並將其應用於各半導體晶圓之正側。檢驗所應用之壓感黏著片之空隙。隨後，半導體晶圓經受背側研磨。因此，已破損之晶圓數目為10/10。遭受研磨水侵入之晶圓數目為10/10。在40℃下，夾層具有0.3之tanδ及0.15兆帕之損耗模量。在23℃下，夾層具有1.5兆帕之儲存模量。
比較例2
除了夾層之厚度改為420微米之外，以與實例1相同之方式生產一壓感黏著片。而後，將此壓感黏著片加熱至70℃並將其應用於各半導體晶圓之正側。檢驗所應用之壓感黏著片之空隙。隨後，半導體晶圓經受背側研磨。因此，已破損之晶圓數目為7/10，且在各晶圓之外週邊觀察到許多裂紋。遭受研磨水侵入之晶圓數目為7/10。在70℃下，夾層具有0.45之tanδ及0.07兆帕之損耗模量。在23℃下，夾層具有1.5兆帕之儲存模量。
比較例3
一無溶劑樹脂層(厚度：400微米)用作為一夾層，且將一壓感黏著層A(厚度：30微米)轉移至無溶劑樹脂層B。在該轉移後，在45℃下加熱所得多層結構24小時且接著將其冷卻至室溫以藉此獲得一半導體晶圓保護用壓感黏著片。而後，將此壓感黏著片加熱至23℃並將其應用於各半導體晶圓之正側。檢驗所應用之壓感黏著片之空隙。隨後，半導體晶圓經受背側研磨。因此，已破損之晶圓數目為9/10。在該9個晶圓中，7個是在其運送期間破損，而兩個是由於晶圓背部研磨機上之真空固持錯誤而破損。遭受研磨水侵入之晶圓數目為0/10。在23℃下，夾層具有0.8之tanδ及0.14兆帕之損耗模量。在23℃下，夾層具有1.9兆帕之儲存模量。
損耗模量、儲存模量及損耗正切(tanδ)之測定方法自一夾層試樣(厚度：2毫米；樣品已經脫氣用之蒸壓處理)打出直徑為7.9毫米之圓盤。該圓盤係夾於平行板之間且用Rheometric公司製造之黏彈計ARES檢驗該圓盤。在檢驗時，以每分鐘5℃之加熱速率將樣品之溫度自-5℃變至75℃，而在1赫茲之頻率下將剪切應變施加於該樣品並在各溫度下獲得損耗模量值G"及儲存模量值G'。使用以下方程式來計算損耗正切tanδ。
損耗正切tanδ=(損耗模量G")/(儲存模量G')
半導體晶圓
藉由在一8-英吋晶圓(厚度：750微米)之表面上形成具有以下高度及以下間距之焊錫凸塊而分別獲得用在該等實例及該等比較例中之半導體晶圓。
焊錫凸塊之高度：200微米
焊錫凸塊之間距：400微米
壓感黏著片於晶圓表面之應用方法
利用由Nitto Seiki公司製造之DR-3000 III以在一既定應用溫度及不高於10毫米/秒之速率下應用一壓感黏著片，同時施加0.2兆帕或更高之既定壓力。
晶圓背側之研磨方法
在一壓感黏著片已應用於一晶圓之正側後，用由Disco公司製造之一矽晶圓研磨機將該晶圓之背側研磨至180微米之厚度。
壓感黏著層A之製備方法
在甲苯溶液中共聚合一由78重量份丙烯酸乙基酯、100重量份丙烯酸丁基酯及40重量份丙烯酸2-羥乙基酯組成之混合物以獲得具有一300,000之重量平均分子量的丙烯酸系共聚物。隨後，43重量份之2-甲基丙烯醯氧基乙基異氰酸酯與丙烯酸系共聚物進行加成反應以將碳碳雙鍵併入聚合物分子之側鏈中。100重量份之此聚合物係與0.1重量份之聚異氰酸酯交聯劑及10重量份之苯乙酮化合物光致聚合引發劑混合。所得混合物係以30微米或40微米的乾基厚度應用於一經脫模劑處理之PET膜以藉此製備一壓感黏著層A。
無溶劑樹脂層之製備方法
將100重量份丙烯酸2-乙基己酯與10重量份丙烯酸之丙烯酸系單體及0.35重量份1-羥基環己基苯基甲酮(註冊商標為「Irgacure 184」，由Ciba Specialty Chemicals公司生產)與0.35重量份2,2-二甲氧基-1,2-二苯基乙酮(註冊商標為「Irgacure 651」，由Ciba Specialty Chemicals公司生產)之光致聚合引發劑導入配有一冷凝器、溫度計及攪拌器的反應器中。在氮氣氛圍中將反應混合物曝露於紫外光下以部分聚合單體並藉此增加混合物之黏度。因此，產生含預聚物之糖漿。將0.2重量份之三羥甲基丙烷三丙烯酸酯之多功能單體添加至此糖漿中。攪拌所得混合物並接著將一定量之混合物應用於一經脫模劑處理之PET膜(厚度：38微米)以便得到一具有400微米之厚度的固化層。一經脫模劑處理之PET膜(厚度：38微米)作為一分離器疊置在糖漿層上以覆蓋糖漿層。隨後，使用一高壓汞燈之紫外光(輻射度：170毫瓦/平方厘米；光量：2,500毫焦/平方厘米)由此PET膜之側照射糖漿層以藉此固化該層。兩已移除經脫模劑處理之PET膜之固化層係用作為一無溶劑樹脂層。
空隙之檢驗方法
在將一壓感黏著片應用於一半導體晶圓之正側後，用一數位顯微鏡(放大50倍)來檢驗壓感黏著片中焊錫凸塊周圍之空隙。以「觀察到」來標示焊錫凸塊周圍具有空隙之壓感黏著片，而以「未觀察到」來標示彼等無空隙者。
半導體晶圓破損之百分比(%)
在半導體晶圓背部研磨後，以視覺或用一數位顯微鏡(放大50倍)檢驗晶圓之破損或裂紋。從由於研磨10個晶圓而破損的半導體晶圓數目，可使用以下方程式計算半導體晶圓破損百分比。
半導體晶圓破損之百分比(%)=(破損晶圓數目/經研磨晶圓數目)×100
研磨水侵入之發生百分比
在半導體晶圓背部研磨之後，用一數位顯微鏡(放大50倍)檢驗半導體晶圓中研磨水對晶圓正側之侵入。從由於研磨10個晶圓而發生研磨水侵入的半導體晶圓數目，可使用以下方程式計算研磨水侵入之發生百分比。
研磨水侵入之發生百分比(%)=(受研磨水侵入之晶圓數目/經研磨晶圓數目)×100
表格1及表格2中概述實例1至實例5及比較例1至比較例3中所獲得之結果。
如表格1及表格2中所示，實例1至實例5之壓感黏著片均能夠應用於一半導體晶圓而不會在存在於晶圓正側上之焊錫凸塊周圍留下空隙，因為各壓感黏著片係在範圍在50℃至100℃之應用溫度下應用於半導體晶圓且在該應用溫度下與壓感黏著層接觸之夾層具有0.5或更大之損耗正切(tanδ)。因此，即使在半導體晶圓背側研磨後，半導體晶圓破損之百分比及研磨水侵入之發生百分比兩者亦均為0%。相反地，在比較例1之壓感黏著片的情況下，因為應用溫度低於50℃且在該應用溫度下之損耗正切(tanδ)小於0.5，所以在壓感黏著片應用於各半導體晶圓之正側後觀察到空隙。雖然在範圍在50℃至100℃之溫度下應用比較例2之壓感黏著片，但因為在該應用溫度下其與壓感黏著層接觸之夾層具有小於0.5之損耗正切(tanδ)，所以在半導體晶圓之背側研磨期間發生晶圓裂開並發生半導體晶圓破損及研磨水侵入。在比較例3之壓感黏著片的情況下，雖然在範圍在50℃至100℃之應用溫度下與壓感黏著層接觸之夾層具有0.5或更大之損耗正切(tanδ)，但因為應用溫度不在該範圍內且因此不能充分加熱壓感黏著片，所以將其應用於各晶圓之正側將產生空隙。另外，因為此壓感黏著片沒有基板，所以此壓感黏著片具有之剛度不能使其承受半導體晶圓之背側研磨後的運送。此外，在夾頭工作台上出現真空固持錯誤且此增加半導體晶圓破損之百分比。
雖然已參考本發明之特定實施例且詳細地描述本發明，但熟習此項技術者將明白可在不背離本發明之範圍下於其中進行各種改變及修飾。
此申請案係基於2009年4月2日申請之日本專利申請案第2009-090230號，該案之全部內容係以引用方式併入本文中。
1‧‧‧基板
2‧‧‧夾層
3‧‧‧壓感黏著層
4‧‧‧半導體晶圓保護用壓感黏著片
5‧‧‧電路承載表面
6‧‧‧半導體晶圓
7‧‧‧第二夾層
圖1係繪示一根據本發明已應用於一半導體晶圓之正側之半導體晶圓保護用壓感黏著片的圖解視圖。
圖2係繪示根據本發明已應用於一半導體晶圓之正側之另一半導體晶圓保護用壓感黏著片的圖解視圖。
1‧‧‧基板
2‧‧‧夾層
3‧‧‧壓感黏著層
4‧‧‧半導體晶圓保護用壓感黏著片
5‧‧‧電路承載表面
6‧‧‧半導體晶圓

Claims (5)

  1. 一種一壓感黏著片於半導體晶圓保護之應用方法，該方法包括將一包括依序疊置之一基板、至少一夾層及一壓感黏著層的半導體晶圓保護用壓感黏著片應用於一半導體晶圓之一表面，其中該壓感黏著片係在一範圍在50℃至100℃之應用溫度下應用於該半導體晶圓且在該應用溫度下與該壓感黏著層接觸之該夾層具有0.5或更大之損耗正切(tanδ)，在該應用溫度下與該壓感黏著層接觸之該夾層具有0.005兆帕(MPa)至0.5兆帕之損耗模量。
  2. 如請求項1之一壓感黏著片於半導體晶圓保護之應用方法，其中在23℃下與該壓感黏著層接觸之該夾層具有0.5兆帕或更高之儲存模量。
  3. 如請求項1之一壓感黏著片於半導體晶圓保護之應用方法，其中該壓感黏著片包括複數個夾層，且與該壓感黏著層接觸之該夾層具有一佔該等夾層之總厚度之至少50%的厚度。
  4. 如請求項1之一壓感黏著片於半導體晶圓保護之應用方法，其中該基板係聚酯膜。
  5. 一種半導體晶圓保護用壓感黏著片，其係用於如請求項1之方法中。
TW099110428A 2009-04-02 2010-04-02 壓感黏著片於半導體晶圓保護之應用方法及用於該應用方法之半導體晶圓保護用壓感黏著片 TWI506688B (zh)

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