CN101859692A - 半导体晶片保护用压敏粘合片及其粘贴方法 - Google Patents
半导体晶片保护用压敏粘合片及其粘贴方法 Download PDFInfo
- Publication number
- CN101859692A CN101859692A CN201010142167A CN201010142167A CN101859692A CN 101859692 A CN101859692 A CN 101859692A CN 201010142167 A CN201010142167 A CN 201010142167A CN 201010142167 A CN201010142167 A CN 201010142167A CN 101859692 A CN101859692 A CN 101859692A
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- Prior art keywords
- sensitive adhesive
- semiconductor wafer
- pressure sensitive
- pressure
- intermediate layer
- Prior art date
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Images
Classifications
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Abstract
本发明涉及半导体晶片保护用压敏粘合片及其粘贴方法。本发明提供半导体晶片保护用压敏粘合片的粘贴方法,该方法包括将包含依次叠置的基材、至少一中间层和压敏粘合剂层的半导体晶片保护用压敏粘合片粘贴至半导体晶片的表面,其中,将该压敏粘合片在50℃至100℃范围内的粘贴温度下粘贴至该半导体晶片,并且与该压敏粘合剂层接触的中间层在该粘贴温度下具有损耗角正切(tanδ)为0.5以上。
Description
技术领域
本发明涉及将半导体晶片保护用压敏粘合片粘贴至具有表面凹凸的半导体晶片的方法,并且还涉及用于该粘贴方法的半导体晶片保护用压敏粘合片。
背景技术
当将具有归因于结构如凸块的表面凹凸的半导体晶片进行背面研磨时,必要的是保护晶片正面以防止存在于晶片正面上的凹凸被损坏和防止晶片正面被晶片研磨粉尘、研磨水等污染。还存在以下问题:即使在微小的外力下,研磨的晶片也易于断裂,这是因为研磨的晶片本身薄且脆和因为晶片正面具有表面凹凸。
为了在晶片背面研磨期间保护晶片正面和防止晶片断裂的目的,将压敏粘合带粘贴至半导体晶片正面的技术已为人所知。例如,专利文献1提出利用在-5至80℃范围内的温度下具有损耗角正切(tanδ)的最大值为0.5以上的基材的压敏粘合片。然而,作为近来半导体封装时厚度降低的结果,存在日益增加的朝向将半导体晶片研磨至不大于在晶片正面形成的凹凸的高度差(leVel difference)的厚度的趋势。因此,此类压敏粘合片需要的性能包括在粘贴至晶片正面时与凹凸的追随性(conformability),对于在晶片背面研磨后是必要的适合输送性、保持性等。
专利文献1:JP-A-11-343469
发明内容
本发明的目的是提供半导体晶片保护用压敏粘合片的粘贴方法,当将具有在晶片正面形成凹凸的晶片的背面被研磨至不大于所述凹凸高度差的厚度时,所述半导体晶片保护用压敏粘合片能够保护晶片正面的凹凸,防止研磨粉尘、研磨水和其它物质渗入晶片正面和防止研磨晶片断裂。本发明的另一目的是提供用于该粘贴方法的半导体晶片保护用压敏粘合片。
即,本发明提供半导体晶片保护用压敏粘合片的粘贴方法,该方法包括:将包括依次叠置的基材、至少一中间层和压敏粘合剂层的半导体晶片保护用压敏粘合片粘贴至半导体晶片的表面,其中将该压敏粘合片在50℃至100℃范围内的粘贴温度下粘贴至半导体晶片,与压敏粘合剂层接触的中间层在该粘贴温度下具有损耗角正切(tanδ)为0.5以上。
半导体晶片保护用压敏粘合片(下文称为压敏粘合片)粘贴至半导体晶片的粘贴温度为50℃至100℃。与压敏粘合剂层接触的中间层的损耗角正切(tanδ)在该粘贴温度下为0.5以上,优选0.5至2.5。当与压敏粘合剂层接触的中间层的损耗角正切(tanδ)在该范围内时,中间层在将压敏粘合片粘贴至半导体晶片的温度下是软的。因此,该压敏粘合片当粘贴至晶片正面时令人满意地追随存在于晶片正面的凹凸。因此,压敏粘合片和半导体晶片之间的粘合得到增强,从而能够防止存在于晶片正面的凹凸在晶片背面研磨时被损坏,并且防止研磨粉尘和研磨水在晶片背面研磨期间渗入晶片正面。
根据本发明,与压敏粘合剂层接触的中间层(位于与压敏粘合剂层接触的侧面上的中间层)优选在所述粘贴温度下具有损耗模量为0.005MPa至0.5MPa。
与压敏粘合剂层接触的中间层在所述粘贴温度下的损耗模量优选0.005MPa至0.5MPa,更优选0.01MPa至0.4MPa,进一步更优选0.015MPa至0.3MPa。当本发明中的与压敏粘合剂层接触的中间层的损耗模量在所述粘贴温度下在所述范围内时,在压敏粘合片粘贴至晶片正面时中间层容易拉伸和追随晶片正面的凹凸。因此,能够抑制已经粘贴至晶片正面的压敏粘合片从晶片正面***(lift up)。因此,能够防止在晶片背面研磨期间发生晶片断裂和研磨粉尘或研磨水渗入晶片正面。
根据本发明,还优选与压敏粘合剂层接触的中间层具有在23℃下的储能模量为0.5MPa以上。
与压敏粘合剂层接触的中间层在23℃下的储能模量优选0.5MPa以上,更优选0.7MPa至5MPa,进一步更优选0.8MPa至3MPa。当本发明中的与压敏粘合剂层接触的中间层的储能模量在23℃下在上述范围内时,能够防止与压敏粘合剂层接触的中间层在将压敏粘合片粘贴至晶片正面后进行研磨晶片背面期间由于粘贴至压敏粘合片的压力而突起。因此,压敏粘合片适当地保持晶片,因而能够抑制晶片在晶片背面研磨期间断裂。
根据本发明,进一步优选的是,当压敏粘合片包括多层中间层时,与压敏粘合剂层接触的中间层的厚度占中间层总厚度的至少50%。
与压敏粘合剂层接触的中间层的厚度占中间层总厚度的优选至少50%,更优选至少55%,进一步更优选至少60%。在与压敏粘合剂层接触的中间层的厚度在所述范围的情况下,压敏粘合片当其粘贴至晶片正面时,显示出对于存在于晶片正面上的凹凸更好的追随性(conformability)。此外,由于该中间层起着用于缓冲在晶片背面研磨期间所施加压力的缓冲层的作用,因此,能够抑制晶片正面上的凹凸被损坏并能够抑制晶片断裂。
根据本发明,优选基材为聚酯膜。
从输送在晶片背面研磨后变得薄且脆的半导体晶片的观点,优选使用具有高刚性的聚酯膜。当聚酯膜用作基材时,能够抑制该基材在晶片背面研磨完成后粘贴至吸盘台(chucktable),这是因为该基材具有高的刚性且没有粘性。
根据本发明,该基材优选具有10μm至150μm的厚度。
基材的厚度优选10μm至150μm,更优选15μm至125μm,进一步更优选20μm至100μm。在基材的厚度在该范围内的情况下,压敏粘合片在卷绕成卷材形式后具有高的形状稳定性。在基材的厚度小于10μm的情况下,压敏粘合片极不易于在卷绕成卷材形式后显示出令人满意的形状保持性。在基材的厚度大于150μm的情况下,隔离纸易于在压敏粘合片卷绕成卷材后剥离。
附图说明
图1是说明已粘贴至半导体晶片正面的根据本发明的半导体晶片保护用压敏粘合片的示意图。
图2是说明已粘贴至半导体晶片正面的根据本发明的另一半导体晶片保护用压敏粘合片的示意图。
附图标记说明
1:基材
2:中间层
3:压敏粘合剂层
4:半导体晶片保护用压敏粘合片
5:半导体晶面的回路面
6:半导体晶片
具体实施方式
在根据需要参考附图的同时,以下详细地说明用于本发明的半导体晶片保护用压敏粘合片。图1和图2是各自说明已粘贴至半导体晶片正面的根据本发明的半导体晶片保护用压敏粘合片的示意图。
示于图1中的半导体晶片保护用压敏粘合片4是粘贴至半导体晶片6的回路承载面5上的压敏粘合片,其由从回路承载面5侧依次配置的压敏粘合剂层3、中间层2和基材1组成。
压敏粘合剂层3可以由普通压敏粘合剂构成。其实例包括丙烯酸类单体的共聚物(丙烯酸类压敏粘合剂),硅酮型压敏粘合剂和橡胶类压敏粘合剂。可以使用一种压敏粘合剂或两种以上压敏粘合剂的混合物。
尤其优选使用丙烯酸类压敏粘合剂作为压敏粘合剂层3。当压敏粘合剂层3由丙烯酸类压敏粘合剂形成时,此类压敏粘合片在研磨后能够从晶片表面剥去,同时减少由于压敏粘合剂的晶片表面污染。压敏粘合剂层3的厚度优选5μm至60μm,更优选10μm至55μm,进一步更优选15μm至50μm。当压敏粘合剂层3的厚度在该范围内时,压敏粘合片具有改进的对回路承载面5的追随性。
构成压敏粘合剂的聚合物可以具有交联结构。此类聚合物通过在交联剂存在下将包括具有官能团如羧基、羟基、环氧基或氨基的单体(例如,丙烯酸类单体)的单体混合物聚合来获得。包括包含具有交联结构的聚合物的压敏粘合剂层的压敏粘合片具有改进的自保持性。因而,该压敏粘合片能够防止变形并能够保持平坦的状态。因此,能够使用例如自动粘贴器(applicator)将该压敏粘合片精确且容易地粘贴至半导体晶片。
还能够将紫外固化型压敏粘合剂用作压敏粘合剂。该压敏粘合剂例如通过将在用紫外线照射时固化而形成低粘合性物质的低聚物成分引入压敏粘合剂物质中而获得。使用由紫外固化型压敏粘合剂构成的压敏粘合剂层具有以下优点。当粘贴压敏粘合片时,该粘贴容易,这是因为低聚物成分赋予压敏粘合剂以塑性流动性。此外,当剥去压敏粘合片时,紫外线照射产生低粘合性物质,这有利于从晶片剥去。
用于压敏粘合剂的主要单体的实例包括丙烯酸甲酯、甲基丙烯酸甲酯、丙烯酸乙酯、甲基丙烯酸乙酯、丙烯酸丁酯、甲基丙烯酸丁酯、丙烯酸2-乙基己酯和甲基丙烯酸2-乙基己酯。这些单体可以单独使用,或可以使用其两种以上的混合物。对于此类主要单体的用量,优选主要单体的含量通常在60重量%至99重量%范围内,基于用作压敏粘合剂聚合物用原料的全部单体的总量。
具有与交联剂反应的官能团且与主要单体共聚的共聚单体的实例包括丙烯酸、甲基丙烯酸、衣康酸、中康酸、柠康酸、富马酸、马来酸、衣康酸的单烷基酯、中康酸的单烷基酯、柠康酸的单烷基酯、富马酸的单烷基酯、马来酸的单烷基酯、丙烯酸2-羟乙酯、甲基丙烯酸2-羟乙酯、丙烯酰胺、甲基丙烯酰胺、丙烯酸叔丁基氨乙酯和甲基丙烯酸叔丁基氨乙酯。其中之一可以与主要单体共聚,或其两种以上可以共聚。对于具有与交联剂反应的官能团的共聚单体的用量,优选共聚单体的含量通常在1重量%至40重量%的范围内,基于用作压敏粘合剂聚合物用原料的全部单体的总量。
从晶片保持性、从晶片的剥离性、不污染晶片表面的性质等的观点,优选中间层2至少含有热塑性树脂。可以含有一种热塑性树脂,或者组合使用两种以上的热塑性树脂。
热塑性树脂的典型实例包括聚丙烯(PE);聚丁烯;乙烯共聚物如乙烯/丙烯共聚物(EPM)、乙烯/丙烯/二烯共聚物(EPDM)、乙烯/丙烯酸乙酯共聚物(EEA)、乙烯/丙烯酸乙酯/马来酸酐共聚物(EEAMAH)、乙烯/甲基丙烯酸缩水甘油酯共聚物(EGMA)、乙烯/甲基丙烯酸共聚物(EMAA)和乙烯/乙酸乙烯酯共聚物(EVA);聚烯烃共聚物;热塑性弹性体如丁二烯类弹性体、乙烯/异戊二烯弹性体和酯类弹性体;热塑性聚酯;聚酰胺树脂如聚酰胺-12;聚氨酯;聚苯乙烯树脂;赛璐玢;丙烯酸类树脂如聚(丙烯酸酯)和聚(甲基丙烯酯甲酯);和聚(氯乙烯)树脂如氯乙烯/乙酸乙烯酯共聚物。
热塑性树脂的重均分子量在优选20,000至300,000、更优选30,000至250,000的范围内。
中间层2可包含其它成分,只要其引入不损害性质即可。此类成分的实例包括增粘剂、增塑剂、软化剂、填充剂和抗氧化剂。尽管压敏粘合片可包括单层中间层,但其也可包括相同或不同种类的多层中间层。
构成基材1的材料的实例包括聚酯如聚(对苯二甲酸乙二酯)(PET)和聚(萘二酸乙二酯)(PEN)。能够将此类材料的一种或其两种以上的组合用作基材1。基材1可具有由相同或不同种类的多层组成的多层结构。
作为基材1,从输送在晶片背面研磨后变得薄且脆的半导体晶片的观点,特别优选使用具有高刚性的聚酯膜。当聚酯膜用作基材时,能够抑制该基材在晶片背面研磨完成后粘贴至吸盘台,这是因为该基材具有高的刚性且没有粘性。
本发明的半导体晶片保护用压敏粘合片4通过以下方式生产:生产基材1与中间层2的层压体,然后在层压体的中间层2侧的表面上形成压敏粘合剂层3。基材1与中间层2的层压体的形成方法的实例包括:其中膜状的中间层2通过用挤出机挤出成型来生产,并且在挤出成型的同时将其层压至已预先准备好的基材1上的方法;其中将基材1和中间层2共挤出的方法。共挤出技术的实例包括T-模挤出法(T-die extrusion method)和膨胀法(inflation method)。在中间层2侧的表面上形成压敏粘合剂层3的方法的实例包括:其中将压敏粘合剂组合物施涂于隔离膜的一个表面上并将其干燥以形成压敏粘合剂层3,并随后将获得的压敏粘合剂层3转移至层压体中间层2侧的表面上的方法;和其中将压敏粘合剂组合物施涂于层压体的中间层2侧的表面上并将其干燥以形成压敏粘合剂层3的方法。
出于增强基材1和中间层2之间的粘合力的目的,可以在其间以新的方式设置粘合剂层。优选的是,将要形成压敏粘合剂层3的中间层2的侧面进行电晕处理、化学处理等,以增强中间层2和压敏粘合剂层3之间的粘合力。此外,在中间层2和压敏粘合剂层3之间设置内涂层(undercoat layer)。
本发明的半导体晶片保护用压敏粘合片4可以折页式(accordion fold)来折叠,或者可以卷绕成卷材形式。
本发明的半导体晶片保护用压敏粘合片4适用于在半导体晶片正面具有高度为100μm至300μm的突起(proj ections)的半导体晶片的背面研磨。
出于保护压敏粘合剂层3的目的,能够将隔离膜设置于压敏粘合剂层3上。隔离膜的实例包括已进行硅酮处理或氟化学处理的塑料膜(例如,聚(对苯二甲酸乙二酯)、聚丙烯和聚乙烯)或纸片以及非极性材料(特别是非极性聚合物)如聚乙烯和聚丙烯。
作为本发明另一实施方案的示于图2的半导体晶片保护用压敏粘合片4是粘贴至半导体晶片6的回路承载面5上的压敏粘合片,其由从回路承载面5依次配置的压敏粘合剂层3、中间层2、第二中间层7和基材1组成。
设置于基材1和中间层2之间的第二中间层7用于联结基材1与中间层2。构成第二中间层7的材料的实例包括低密度聚乙烯树脂(LDPE)。
实施例
以下将参考实施例更详细地说明本发明,但本发明不应理解为由以下实施例限定。
实施例1
分别将聚(对苯二甲酸乙二酯)用作基材用树脂,将乙烯/乙酸乙烯酯共聚物树脂A(EVA)用作中间层用热塑性树脂,通过层压法生产基材(厚度:38μm)与中间层(厚度:450μm)的层压体。随后,使要在其上形成压敏粘合剂层的中间层表面进行电晕处理,将压敏粘合剂层A(厚度:30μm)转移至经电晕处理的中间层表面。转移后,将所得多层结构在45℃下加热24小时,然后冷却至室温,从而获得半导体晶片保护用压敏粘合片。之后,将该压敏粘合片加热至65℃并粘贴至各半导体晶片的正面。检查粘贴的压敏粘合片的空隙。随后,将半导体晶片进行背面研磨。结果,在10片中断裂的晶片数量为0。在10片中遭受研磨水渗入的晶片数量为0。中间层具有在65℃下的tanδ为0.64和损耗模量为0.02MPa。中间层具有在23℃下的储能模量为1.5MPa。
实施例2
分别将聚(对苯二甲酸乙二酯)用作基材用树脂,将乙烯/乙酸乙烯酯共聚物树脂A(EVA)用作中间层用热塑性树脂,通过层压法生产基材(厚度:50μm)与中间层(厚度:390μm)的层压体。随后,使要在其上形成压敏粘合剂层的中间层表面进行电晕处理,将压敏粘合剂层A(厚度:40μm)转移至经电晕处理的中间层表面。转移后,将所得多层结构在45℃下加热24小时,然后冷却至室温,从而获得半导体晶片保护用压敏粘合片。之后,将该压敏粘合片加热至60℃并粘贴至各半导体晶片的正面。检查粘贴的压敏粘合片的空隙。随后,将半导体晶片进行背面研磨。结果,在10片中断裂的晶片数量为0。在10片中遭受研磨水渗入的晶片数量为0。中间层具有在60℃下的tanδ为0.54和损耗模量为0.07MPa。中间层具有在23℃下的储能模量为1.5MPa。
实施例3
分别将聚(对苯二甲酸乙二酯)用作基材用树脂,将乙烯/丙烯/二烯树脂(EPDM)用作中间层用热塑性树脂,通过层压法生产基材(厚度:38μm)与中间层(厚度:450μm)的层压体。随后,使要在其上形成压敏粘合剂层的中间层表面进行电晕处理,将压敏粘合剂层A(厚度:40μm)转移至经电晕处理的中间层表面。转移后,将所得多层结构在45℃下加热24小时,然后冷却至室温,从而获得半导体晶片保护用压敏粘合片。之后,将该压敏粘合片加热至50℃并粘贴至各半导体晶片的正面。检查粘贴的压敏粘合片的空隙。随后,将半导体晶片进行背面研磨。结果,在10片中断裂的晶片数量为0。在10片中遭受研磨水渗入的晶片数量为0。中间层具有在50℃下的tanδ为1.6和损耗模量为0.03MPa。中间层具有在23℃下的储能模量为0.90MPa。
实施例4
分别将聚(对苯二甲酸乙二酯)用作基材用树脂,将聚乙烯(PE)用作中间层用热塑性树脂,通过层压法生产基材(厚度:38μm)与中间层(厚度:450μm)的层压体。随后,使要在其上形成压敏粘合剂层的中间层表面进行电晕处理,将压敏粘合剂层A(厚度:40μm)转移至经电晕处理的中间层表面。转移后,将所得多层结构在45℃下加热24小时,然后冷却至室温,从而获得半导体晶片保护用压敏粘合片。之后,将该压敏粘合片加热至80℃并粘贴至各半导体晶片的正面。检查粘贴的压敏粘合片的空隙。随后,将半导体晶片进行背面研磨。结果,在10片中断裂的晶片数量为0。在10片中遭受研磨水渗入的晶片数量为0。中间层具有在80℃下的tanδ为0.58和损耗模量为0.07MPa。中间层具有在23℃下的储能模量为2.8MPa。
实施例5
分别将聚(对苯二甲酸乙二酯)用作基材用树脂,将低密度聚乙烯树脂(LDPE)用作第二中间层用材料。此外,将乙烯/乙酸乙烯酯共聚物树脂(EVA)用作中间层用热塑性树脂。将锚固涂布材料施涂于基材的一面并干燥,将低密度聚乙烯树脂熔融挤出并层压至锚固涂布侧。之后,将乙烯/乙酸乙烯酯共聚物树脂挤出并施加于低密度聚乙烯层,从而生产由基材(厚度:50μm)、第二中间层(厚度:15μm)和中间层(厚度:450μm)组成的层压体。随后,使要在其上形成压敏粘合剂层的中间层表面进行电晕处理,将压敏粘合剂层A(厚度:30μm)转移至经电晕处理的中间层表面。转移后,将所得多层结构在45℃下加热24小时,然后冷却至室温,从而获得半导体晶片保护用压敏粘合片。之后,将该压敏粘合片加热至65℃并粘贴至各半导体晶片的正面。检查粘贴的压敏粘合片的空隙。随后,将半导体晶片进行背面研磨。结果,在10片中断裂的晶片数量为0。在10片中遭受研磨水渗入的晶片数量为0。中间层具有在65℃下的tanδ为0.64和损耗模量为0.02MPa。中间层具有在23℃下的储能模量为1.5MPa。
比较例1
除了将基材的厚度改变为50μm和将压敏粘合剂层A的厚度改变为40μm之外,以与实施例1相同的方式生产压敏粘合片。之后,将该压敏粘合片加热至40℃并粘贴至各半导体晶片的正面。检查粘贴的压敏粘合片的空隙。随后,将半导体晶片进行背面研磨。结果,在10片中断裂的晶片数量为10。在10片中遭受研磨水渗入的晶片数量为10。中间层在40℃下的具有tanδ为0.3和损耗模量为0.15MPa。中间层具有在23℃下的储能模量为1.5MPa。
比较例2
除了将中间层的厚度改变为420μm之外,以与实施例1相同的方式生产压敏粘合片。之后,将该压敏粘合片加热至70℃并粘贴至各半导体晶片的正面。检查粘贴的压敏粘合片的空隙。随后,将半导体晶片进行背面研磨。结果,在10片中断裂的晶片数量为7,并且在各晶片的外周观察到很多裂纹。在10片中遭受研磨水渗入的晶片数量为7。中间层具有在70℃下的tanδ为0.45和损耗模量为0.07MPa。中间层具有在23℃下的储能模量为1.5MPa。
比较例3
将无溶剂树脂层(solventless resin layer)(厚度:400μm)用作中间层,将压敏粘合剂层A(厚度:30μm)转移至无溶剂树脂层B。转移后,将所得多层结构在45℃下加热24小时,然后冷却至室温,从而获得半导体晶片保护用压敏粘合片。之后,将该压敏粘合片加热至23℃并粘贴至各半导体晶片的正面。检查粘贴的压敏粘合片的空隙。随后,将半导体晶片进行背面研磨。结果,在10片中断裂的晶片数量为9。在9片晶片中,7片在其输送期间断裂,两片由于在晶片背面研磨机中的真空保持(vacuumholding)误差而断裂。在10片中遭受研磨水渗入的晶片数量为0。中间层具有在23℃下的tanδ为0.8和损耗模量为0.14MPa。中间层具有在23℃下的储能模量为1.9MPa。
测定损耗模量、储能模量和损耗角正切(tanδ)的方法
从中间层试样中冲压出直径为7.9mm的圆盘(厚度:2mm;该试样已进行用于脱气的压热处理(autoclave treatment)。将该圆盘夹在平行板(parallel plates)之间并用由Rheometric Inc.制造的粘弹性计ARES检查。在检查中,将试样的温度以加热速率5℃/分钟从-5℃改变至75℃,同时以1Hz的频率将剪切应力施加于其上,在各温度下获得损耗模量G″和储能模量G′的值。损耗角正切(tanδ)使用以下等式来计算。
损耗角正切(tanδ)=(损耗模量G″)/(储能模量G′)
半导体晶片
用于实施例和比较例的半导体晶片是各自通过在8英寸的晶片(厚度,750μm)表面上以以下间距形成具有以下高度的焊料凸块而获得的半导体晶片。
焊料凸块的高度:200μm
焊料凸块的间距:400μm
压敏粘合片粘贴至晶片表面的方法
将由Nitto Seiki Inc.制造的DR-3000III用于将压敏粘合片在给定的粘贴温度下和不高于10mm/秒的速度下施加,同时施加给定压力为0.2MPa以上。
研磨晶片背面的方法
在将压敏粘合片粘贴至晶片正面之后,将晶片背面用由Disco Corp.制造的硅晶片研磨机研磨至厚度为180μm。
制备压敏粘合剂层A的方法
将由78重量份丙烯酸乙酯、100重量份丙烯酸丁酯和40重量份丙烯酸2-羟乙酯组成的混合物在甲苯溶液中共聚,获得具有重均分子量为300,000的丙烯酸类共聚物。随后,将43重量份2-甲基丙烯酰氧乙基异氰酸酯与丙烯酸类共聚物进行加成反应,从而将碳-碳双键引入聚合物分子的侧链中。将100重量份该聚合物与0.1重量份多异氰酸酯交联剂和10重量份苯乙酮化合物光聚合引发剂混合。将所得混合物粘贴至经隔离剂处理的PET膜上,基于干燥基准,其厚度为30μm或40μm,从而制备压敏粘合剂层A。
制备无溶剂树脂层(solventless resin layer)的方法
向装配有冷凝器、温度计和搅拌器的反应容器中引入作为丙烯酸类单体的100重量份丙烯酸2-乙基己酯和10重量份丙烯酸以及作为光聚合引发剂的0.35重量份1-羟基环己基苯基酮(注册商标″Irgacure 184″,由Ciba Specialty Chemicals Co.制造)和0.35重量份2,2-二甲氧基-1,2-二苯基乙烷-1-酮(注册商标″Irgacure 651″,由Ciba Specialty Chemicals Co.制造)。将反应混合物在氮气气氛中暴露于紫外线中来部分聚合单体,从而增大混合物的粘度。因而,生产含预聚物的浆料。向将浆料中添加0.2重量份三羟甲基丙烷三丙烯酸酯作为多官能单体。将所得混合物搅拌,然后以得到具有厚度为400μm的固化层的量将其施涂于经隔离剂处理的PET膜(厚度:38μm)。经隔离剂处理的PET膜(厚度:38μm)作为隔离物叠置于其上以覆盖浆料层。随后,将浆料层(syrup layer)从该PET膜的侧面使用高压汞灯用紫外线(辐照度:170mW/cm2;光量:2,500mJ/cm2)照射,从而固化该层。将已经去除两个经隔离剂处理的PET膜的固化层用作无溶剂树脂层。
检查空隙的方法
在将压敏粘合片粘贴至半导体晶片正面之后,将压敏粘合片用数字式显微镜(50放大倍率)检查焊料凸块周围的空隙。将焊料凸块周围具有空隙的压敏粘合片由″观察到″表示,将没有空隙的那些由″未观察到″表示。
半导体晶片断裂百分率(%)
在半导体晶片背面研磨之后,目测或用数字式显微镜(50放大倍率)检查晶片的断裂或破裂。从作为研磨10片晶片的结果断裂的半导体晶片数量,使用以下等式计算半导体晶片断裂百分率。
半导体晶片断裂百分率(%)={(断裂晶片的数量)/(研磨晶片的数量)}×100
研磨水渗入发生百分率
在半导体晶片背面研磨之后,对半导体晶片采用数字式显微镜(50放大倍率)检查研磨水渗入晶片正面。从作为研磨10片晶片的结果已发生研磨水渗入的半导体晶片数量,使用以下等式计算研磨水渗入发生百分率:
研磨水渗入发生百分率(%)={(研磨水渗入的晶片数量)/(研磨晶片的数量)}×100
实施例1至5和比较例1至3中获得的结果总结于表1和表2中。
表1
表2
如在表1和表2中所示,实施例1至5的压敏粘合片各自能够粘贴至半导体晶片而在存在于晶片正面的焊料凸块周围不留下空隙,这是因为将各压敏粘合片在50℃至100℃范围内的粘贴温度下粘贴至半导体晶片并且与压敏粘合剂层接触的中间层具有在该粘贴温度下的损耗角正切(tanδ)为0.5以上。因此,即使在研磨半导体晶片背面后,半导体晶片断裂百分率和研磨水渗入发生百分率为0%。相反,在比较例1的压敏粘合片的情况下,在将压敏粘合片粘贴至各半导体晶片正面后,观察到空隙,这是因为粘贴温度低于50℃并且在该粘贴温度下的损耗角正切(tanδ)小于0.5。尽管比较例2的压敏粘合片在50℃至100℃范围内的温度下粘贴,但是由于其与压敏粘合剂层接触的中间层在该粘贴温度下具有损耗角正切(tanδ)为小于0.5,因此在半导体晶片的背面研磨期间发生晶片破裂,发生半导体晶片断裂和研磨水渗入。在比较例3的压敏粘合片的情况下,其向各晶片正面的施加导致空隙,这是因为粘贴温度不在50℃至100℃的范围内,因而压敏粘合片未得到充分加热,尽管与压敏粘合剂层接触的中间层在该粘贴温度下具有损耗角正切(tanδ)为0.5以上。此外,由于该压敏粘合片没有基材,该压敏粘合片不具有能够使得压敏粘合片在半导体晶片背面研磨后经得住输送的刚性。此外,在吸盘台上真空保持误差发生,这增大了半导体晶片断裂率。
尽管已详细地且参考具体实施方案描述本发明,但对于本领域熟练技术人员显而易见的是,其中能够进行各种变化和改进而不偏离其范围。
本申请基于2009年4月2日提交的日本专利申请2009-090230,在此将其全部内容引入以作参考。
Claims (6)
1.一种半导体晶片保护用压敏粘合片的粘贴方法,所述方法包括将包含依次叠置的基材、至少一个中间层和压敏粘合剂层的半导体晶片保护用压敏粘合片粘贴于半导体晶片的表面,其中,将所述压敏粘合片在50℃至100℃范围内的粘贴温度下粘贴于所述半导体晶片,并且与所述压敏粘合剂层接触的中间层在所述粘贴温度下的损耗角正切(tanδ)为0.5以上。
2.根据权利要求1所述的半导体晶片保护用压敏粘合片的粘贴方法,其中与所述压敏粘合剂层接触的中间层在所述粘贴温度下的损耗模量为0.005MPa至0.5MPa。
3.根据权利要求1所述的半导体晶片保护用压敏粘合片的粘贴方法,其中与所述压敏粘合剂层接触的中间层在23℃下的储能模量为0.5MPa以上。
4.根据权利要求1所述的半导体晶片保护用压敏粘合片的粘贴方法,其中所述压敏粘合片包含多个中间层,与所述压敏粘合剂层接触的中间层具有占所述中间层总厚度的至少50%的厚度。
5.根据权利要求1所述的半导体晶片保护用压敏粘合片的粘贴方法,其中所述基材是聚酯膜。
6.一种半导体晶片保护用压敏粘合片,其用于根据权利要求1所述的方法中。
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CN101859692B (zh) | 2015-10-21 |
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US20100255299A1 (en) | 2010-10-07 |
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TWI506688B (zh) | 2015-11-01 |
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