TWI489594B - And the semiconductor module - Google Patents

And the semiconductor module Download PDF

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Publication number
TWI489594B
TWI489594B TW101148329A TW101148329A TWI489594B TW I489594 B TWI489594 B TW I489594B TW 101148329 A TW101148329 A TW 101148329A TW 101148329 A TW101148329 A TW 101148329A TW I489594 B TWI489594 B TW I489594B
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Taiwan
Prior art keywords
mass
metal
lead
free glass
adhesive member
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TW101148329A
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English (en)
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TW201347102A (zh
Inventor
Yuichi Sawai
Takashi Naito
Takuya Aoyagi
Tadashi Fujieda
Mutsuhiro Mori
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Hitachi Ltd
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Publication of TWI489594B publication Critical patent/TWI489594B/zh

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    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Description

接合體及半導體模組
本發明是有關接合金屬、陶瓷、半導體的接合構件、及使用彼之半導體模組。
一般，半導體模組是在基底金屬接著陶瓷基板，在陶瓷基板接著金屬配線，且在該金屬配線接著半導體晶片等的元件而製造。將在此使用於接著的接著劑稱為黏晶材。以往的功率裝置用封裝的元件接著是焊錫接合為主流，但因為無鉛化的必要性，使用混合Ag粉末及樹脂的導電性糊膏或無鉛焊錫作為代替材料。
有關半導體晶片接合，半導體晶片等的半導體元件是有高集成化及微細化的傾向，隨之，每單位面積的發熱量會有增加的傾向。因此，在搭載有半導體元件的半導體模組中，需要使從半導體元件產生的熱有效率地逃至外部，黏晶材的熱傳導性的提升將成為課題。
並且，陶瓷基板接合，主要是對AlN或Si3 N4 等的陶瓷基板進行金屬噴鍍，藉由無鉛焊錫來接合金屬噴鍍層與半導體晶片、或金屬噴鍍層與基底金屬。牢固的金屬噴鍍層的形成方法、基板與半導體晶片的熱膨脹係數差的緩和、基板的放熱性的提升、耐熱循環性等的長期可靠度的提升成為必要。
在專利文獻1記載有關無鉛焊錫糊膏，提供一種含Bi 焊錫粉及Cu金屬粉之熱傳導率52W/mK的無鉛焊錫糊膏。
[先行技術文獻]
[專利文獻]
[專利文獻1]特開2011-251329號公報
但，無鉛焊錫是若預先不將陶瓷基板予以金屬噴鍍處理，則陶瓷基板與金屬配線的接著性低。並且，在將同無鉛焊錫使用在金屬配線與半導體晶片的接合時，熱傳導率低。
本發明的目的是使接著金屬、陶瓷、半導體的任一種之接合體的接著性及熱傳導性提升。
為了達成上述目的，本發明係接著金屬、陶瓷、半導體的任一種的第1構件與第2構件之接合體，其特徵為：經由設在前述第1構件的面之接著構件來接著前述第2構件，前述接著構件係含有含V2 O5 的玻璃及金屬粒子。
又，本發明係具備基底金屬、陶瓷基板、金屬配線及半導體晶片的半導體模組，其特徵為：經由設在前述基底金屬的面之第1接著構件來接著前 述陶瓷基板，經由設在前述陶瓷基板的面之第2接著構件來接著前述金屬配線，經由設在前述金屬配線的面之第3接著構件來接著前述半導體晶片，前述第1接著構件、第2接著構件及第3接著構件係含有含V2 O5 的玻璃及金屬粒子。
若根據本發明，則可提升接著性及熱傳導性。
本發明是如圖1所示般，有關接著金屬、陶瓷、半導體的任一構件(第1構件1-1、第2構件1-2)之接合體，接合兩者的接合構件2是含有玻璃及金屬粒子。作為可接著於金屬、陶瓷、半導體的任一種的玻璃是以含氧化釩(V2 O5 )為前提。圖的上下方向的厚度是在構件的面內的哪個位置皆可為不均一。並且，接著構件2亦可不與兩構件所被接著的側的面全體接著，或相反的從兩構件擠出。總之，只要接著構件2在第1構件1-1與第2構件1-2之間層狀地形成、密合即可。
又，本發明的接合體是被通電而在第1構件1-1與第2構件1-2之間產生溫度差之類的運轉狀態時，不僅接著兩構件，且熱可從兩構件之中高溫側的構件往低溫側的構件通過接著構件2來移動。因此，例如第1構件1-1為發熱體，第2構件1-2為放熱體時，可使熱從第1構件1-1 經由接著構件2來逃往第2構件1-2。
接合構件2是以作為糊膏來支給、使用為前提，將糊膏塗布、乾燥後，進行暫時燒結，除去有機成分之後，經過接合構件彼此間的正式燒結工程來取得接合體。為此，最好玻璃是結晶質比非晶質更少，為了再現良好的流動性，最好結晶化度為30%以下。
為了儘可能不使玻璃結晶化，將TeO2 的含有量形成至少15質量%以上。又，為了防止玻璃的結晶化，添加BaO或WO3 。具體而言，玻璃是V2 O5 為35~55質量%，TeO2 為15~35質量%，P2 O5 為4~20質量%，及Fe2 O3 、WO3 、MoO3 、MnO2 、Sb2 O3 、Bi2 O3 、BaO、K2 O、ZnO的其中1種以上為5~30質量%。
而且，為了降低玻璃的軟化點，將TeO2 的含有量形成至少15質量%以上的同時，將Ag2 O設為另一個的成分。具體而言，玻璃是含有10~60質量%的Ag2 O、及5~65質量%的V2 O5 、以及15~50質量%的TeO2 。在上述組成範圍內，越增加Ag2 O的含有量，越可使軟化點低溫化。
為了對前述接合構件賦予熱傳導性，混合不與含氧化釩的玻璃反應的金屬粒子。構成前述接合構件的金屬粒子是含Ag或Sn焊錫的至少任一種，佔前述接合構件的30~95體積%。
並且，構成前述接合構件的金屬粒子是Ag，佔前述接合構件的60~95體積%。
適用本發明的形態之一是半導體模組，如圖2所示般，具備：在基底金屬3的上面經由第1接著層4來接著的陶瓷基板等的絕緣層5、在該絕緣層5的上面經由第2接著層6來接著的金屬配線7、在該金屬配線7上經由第3接著層8來接著的半導體晶片9。該絕緣層5與第1及第2接著層的界面不具金屬噴鍍層，第1、第2及第3接著層是含有氧化釩玻璃及金屬粒子。絕緣層5是例如可舉AlN或Si3 N4 等的熱傳導率高的陶瓷基板。
亦即在本發明的半導體模組是含有第1、第2及第3接著層，但當然也可將本發明適用在僅第1、第2或第3接著層的任一個。
接著構件是只要設在被接著的構件之間即可。在圖中，接著構件的面積比被接著的構件之中接著面小(在絕緣層5及金屬配線7是金屬配線7，在金屬配線7及半導體晶片9是半導體晶片9)的面積更被描繪成大，但亦可為接著構件的面積比接著面小的面積更小。並且，各構件是只要在至少1個的面中與接著構件連接即可，但接著層也可及於側面等的複數個面，可更牢固地接著。
半導體模組是例如可舉功率裝置，會有設置在施加大的振動或長期性的振動的場所、暴露於高溫的場所之情形。因此，各零件彼此間需要被牢固地接著。在本發明中，由於軟化後的氧化釩玻璃會與各零件以高的浸潤性來密合凝固，因此可分別牢固地接著基底金屬3、絕緣層5、金屬配線7、半導體晶片9。因此，即使在零件中含有 陶瓷，還是可不進行金屬噴鍍處理，提升零件彼此間的接著性。
並且，使用在半導體模組的接著構件是需要可經由接著部分來放熱。因此，在本發明的接著構件是使含有金屬粒子，而提高接著劑的熱傳導率。
在接著構件所含的玻璃是以含有V2 O5 為前提。具體而言，V2 O5 為35~55質量%、TeO2 為15~35質量%、P2 O5 為4~20質量%、及Fe2 O3 、WO3 、MoO3 、MnO2 、Sb2 O3 、Bi2 O3 、BaO、K2 O、ZnO之中1種以上為5~30質量%。如此的組成範圍的玻璃是玻璃轉移點為330℃以下，所以即使是500℃以下的溫度也會充分地軟化，基底金屬3、絕緣層5、金屬配線7、半導體晶片9皆可良好地接著。
一般玻璃是氧化物，所以一旦混合金屬粒子而加熱，則大部分的情況金屬粒子會氧化。構成本發明的氧化釩玻璃也相同，若與Cu、Fe、Al等的金屬粉末混合而加熱，則金屬粉末會氧化。另一方面，Ag是難氧化的金屬為人所知，即使與構成本發明的氧化釩玻璃混合而加熱，也不會被氧化。加上發明者們發現即使混合Sn系無鉛焊錫(Sn-Ag-Cu系焊錫或Sn-Cu-Ni系焊錫)粉末與氧化釩玻璃而加熱，也幾乎不會被氧化。
金屬粒子是包含含有Ag或Sn焊錫(Sn-Ag-Cu系焊錫)的至少一種者為佳。含有Ag或Sn焊錫是即使與氧化釩玻璃混合，也難被氧化，因此形成接著構件時的熱傳導率難降低。一般第2接著構件6不需要導電性，因此除了 電的良導體之Ag以外，亦可為含有Sn焊錫粉末，或混合兩者。並且，金屬粒子是佔第2接著構件6的30~95體積%為佳。藉由形成如此的構成，可良好地接著絕緣層5與金屬配線7，且可具有適度的熱傳導率。而且，若金屬粒子佔第2接著構件6的60~95體積%，則熱傳導率會更提升，可使半導體晶片9的發熱更迅速跑掉。
又，玻璃亦可為含有10~60質量%的Ag2 O、及5~65質量%的V2 O5 、以及15~50質量%的TeO2 者。藉由形成如此的組成範圍，可使玻璃轉移點形成250℃以下更低溫化，且可確保充分的熱的安定性，即使400℃以下的溫度，基底金屬3、絕緣層5、金屬配線7、半導體晶片9皆可良好地接著。
只在第3接著層8適用本發明的半導體模組是具備在金屬配線7上經由第3接著層8來接著的半導體晶片9。第3接著構件8是含有氧化釩玻璃及金屬粒子。在此，該金屬粒子是Ag，佔第3接著構件8的60~95體積%。藉由形成如此的構成，可良好地接著金屬配線7與半導體晶片9，且可賦予高的熱傳導率及低的電阻率。
並且，如圖2所示般，以金屬構件10，11來連接半導體晶片9與金屬配線7時，可使用本發明的接著構件。亦即，在前述構成的半導體模組中，經由第4接著構件12，第5接著構件13來以金屬構件10，11連接半導體晶片9與金屬配線7。在此，該金屬粒子是Ag，佔第4接著構件的60~95體積%。藉由形成如此的構成，可良好地接 著金屬配線7與半導體晶片9，且可賦予高的熱傳導率及低的電阻率。
第3接著構件8或第4接著構件12，第5接著構件13的氧化釩玻璃的組成是與第2接著構件6同樣。
在圖3顯示LED照明裝置的構造剖面圖，作為本發明的別的形態。LED照明裝置是具備：LED發光元件16經由接著構件15來接著於基板14的發光模組、及對該發光模組供給電力的電源電路部(未圖示)。有關接著構件15是與上述半導體模組同樣。
由於LED發光元件容易因熱而劣化，所以隨發光的發熱必須逃至外部。因此，藉由將金屬粒子設為Ag，形成佔接著構件的60~95體積%之類的構成，可良好地接著基板與LED發光元件，且可具有高的熱傳導率。
在圖4顯示個人電電腦的主機板等的半導體裝置，作為本發明的另外別的形態。該半導體裝置是具備在基板17上經由接著構件18來連接CPU19至散熱片20的微電腦IC。有關接著構件18是與上述半導體模組同樣。
更詳細，接著構件18所含的玻璃的特徵是V2 O5 為35~55質量%，TeO2 為15~35質量%，P2 O5 為4~20質量%，及Fe2 O3 、WO3 、MoO3 、MnO2 、Sb2 O3 、Bi2 O3 、BaO、K2 O、ZnO的其中1種以上為5~30質量%。由於如此的組成範圍的玻璃是玻璃轉移點為330℃以下，因此即使是500℃以下的溫度也會充分地軟化，所以可在500℃以下的溫度良好地接著基板與LED發光元件、或CPU與散熱片 等。
或，以含有10~60質量%的Ag2 O、及5~65質量%的V2 O5 、及15~50質量%的TeO2 為特徵。藉由形成如此的組成範圍，可將玻璃轉移點低溫化成250℃以下，且可確保充分的熱的安定性，可在400℃以下的溫度良好地接著基板與LED發光元件、或CPU與散熱片等。
[實施例1]
在本實施例中是製作具有各種組成的氧化釩玻璃，調查該玻璃的軟化點及耐濕性。
(玻璃的製作)
製作具有表1所示組成的玻璃(VTC2-01~03及VTC3-01~03)。表中的組成是以各成分的氧化物換算的質量比率來表示。起始原料是使用(股)高純度化學研究所製的氧化物粉末(純度99.9%)。在一部分的試料中是使用Ba(PO3 )2 (磷酸鋇，Rasa Industries,LTD製)作為Ba源及P源。
以表1所示的質量比來混合各起始原料粉末，將合計200g的混合粉末放入坩堝。在此，原料中的Ag2 O的比率為40質量%以下時是使用白金坩堝，40質量%以上時是使用礬土坩堝。在混合時是考量避免對原料粉末之多餘的吸濕，使用金屬製湯匙，在坩堝內混合。
在玻璃溶融爐內設置放入原料混合粉末的坩堝，加熱．融解。以10℃/min的昇溫速度來昇溫，在設定溫度(700 ~900℃)下，一邊攪拌融解的玻璃，一邊保持1小時。然後，從玻璃溶融爐取出坩堝，在預先加熱至150℃的石墨鑄模中鑄入玻璃。其次，將被鑄入的玻璃移動至預先加熱至去應變溫度的去應變爐，藉由保持1小時來除去應變之後，以1℃/min的速度來冷卻至室溫。將冷卻至室溫的玻璃粉碎，製作具有表所示的組成之玻璃的粉末。
(軟化點的評價)
對上述所取得的各玻璃粉末，藉由示差熱分析(DTA)來測定特性溫度。DTA測定是將參照試料(α-礬土)及測定試料的質量分別設為650mg，大氣中以5℃/min的昇溫速度進行。本實施例是將玻璃的DTA曲線的第2吸熱峰值溫度設為軟化點Ts(參照圖5)。將結果併記於表1。
[實施例2]
在本實施例是針對AlN或Si3 N4 之類的陶瓷基板與金屬材料的接著進行檢討。
使用在實施例1所製作的玻璃VTC2-01，依以下的程序來製作接合樣本。首先，將VTC2-01粉碎，形成平均粒子徑0.5μm以下的微細粉。以所定的比率來調和粉碎後的VTC2-01與Ag粉末或Sn-Ag-Cu系焊錫粉末，藉由乳鉢來混合15min，製作混合粉末。
(熱傳導率)
利用金屬模來將各種混合粉末形成直徑10mm、厚度2mm的成形體。使用電氣馬弗爐(muffle furnace)，大氣中將製作後的成形體燒結450℃×30min，成為用以評價第1接著層的熱傳導率的模擬樣本。利用如此製作的燒結體試料，以氙閃光(xenon flash)法來測定熱傳導率。所謂氙閃光法是在模擬樣本的一面照射脈衝光，由背面溫度的時間變化來測定熱擴散率者，根據此來算出熱傳導率。將各樣本的熱傳導率彙整於表2。
然後，將各種混合粉末、樹脂黏結劑及溶劑混合，以自動混練器(脫泡練太郎；產品名，THINKY公司製)來混練，製作黏晶材糊膏。樹脂黏結劑是使用乙基纖維素，溶劑是使用二甘醇丁醚醋酸酯。利用如此製作的黏晶材糊膏，藉由以下所示的方法來評價接著強度。
(接著強度)
在陶瓷基板上，於5×5mm2 的範圍，印刷黏晶材糊膏，以150℃來使乾燥後，大氣中進行450℃×30min暫時燒結。然後，使切成4×4mm2 的Cu，Al，AlSiC板載於黏晶材上，且在其上承載100g的秤錘，大氣中進行450℃×30min燒結。
如此，製作一在陶瓷基板上接著金屬板的晶片剪切試驗樣本。藉由晶片剪切強度試驗來評價金屬板與陶瓷基板的接著強度。在此所謂晶片剪切強度試驗是如圖6所示般，藉由專用治具19來將在基板上經由接著構件17所接合的金屬板18從側面推至水平方向，測定金屬板自基板剝離的荷重值，亦即金屬板的剪切強度(晶片剪切強度；N)之試驗方法。將陶瓷基板為使用AlN基板時的評價結果彙整於表2，及使用Si3 N4 基板時的評價結果彙整於表3。本實施例是將接著強度>20Mpa且熱傳導率>10W/mK的樣本設為合格。
由表可知，顯示實施例的黏晶材可在不具金屬噴鍍層的陶瓷基板以高的熱傳導率及接著強度來接著金屬板。
[實施例3]
在本實施例是針對Cu基板與Si半導體晶片的接著進行檢討。
使用在實施例1所製作的玻璃VTC3-01，依以下的程序製作接合樣本。首先，將VTC3-01粉碎，形成平均粒子徑0.5μm以下的微細粉。以所定的比率來調和粉碎後的VTC3-01與Ag粉末，藉由乳鉢來混合15min，製作混合粉末。
(熱傳導率及電阻率)
利用金屬模來將各種混合粉末形成直徑10mm、厚度 2mm的成形體。使用電氣馬弗爐，大氣中，將製作後的成形體在大氣中燒結350℃×30min，成為用以評價第3接著層的熱傳導率及電阻率的模擬樣本。
利用三菱化學(股)的簡易型低電阻率計(Loresta AX；MCP-T370型)來測定同燒結體樣本的電阻率。然後使用同樣本，以氙閃光法來測定熱傳導率。
(接著強度)
將各種混合粉末、樹脂黏結劑及溶劑混合，與實施例2同樣地製作黏晶材糊膏。在陶瓷基板上，於5×5mm2 的範圍印刷黏晶材糊膏，使以150℃乾燥後，大氣中進行350℃×30min暫時燒結。然後，使4×4mm2 的Si半導體晶片載於黏晶材上，且在其上承載100g的秤錘，大氣中進行350℃×30min燒結，成為在Cu基板上接著Si半導體晶片的晶片剪切試驗樣本。藉由晶片剪切強度試驗來評價Si半導體晶片與Cu基板的接著強度。將評價結果彙整於表4。
在本實施例是將接著強度>20Mpa，熱傳導率>50W/mK，且電阻率<1.0×10-5 Ω．cm的樣本設為合格。
由表4可知，顯示實施例的黏晶材可在不具金屬噴鍍層的陶瓷基板以高的熱傳導率及接著強度接著。
1-1‧‧‧第1構件
1-2‧‧‧第2構件
2、15、18、21‧‧‧接著構件
3‧‧‧基底金屬
4‧‧‧第1接著構件
5‧‧‧絕緣層
6‧‧‧第2接著構件
7‧‧‧金屬配線
8‧‧‧第3接著構件
9‧‧‧半導體晶片
10、11‧‧‧金屬構件
12‧‧‧第4接著構件
13‧‧‧第5接著構件
14‧‧‧LED搭載基板
16‧‧‧LED發光元件
17‧‧‧基板
19‧‧‧CPU
20‧‧‧散熱片
22‧‧‧晶片
23‧‧‧專用治具
[圖1]接合體的構造剖面圖。
[圖2]半導體模組的構造剖面圖。
[圖3]LED照明裝置的構造剖面圖。
[圖4]半導體裝置的構造剖面圖。
[圖5]玻璃的DTA曲線。
[圖6]晶片剪切強度試驗模式圖。
3‧‧‧基底金屬
4‧‧‧第1接著構件
5‧‧‧絕緣層
6‧‧‧第2接著構件
7‧‧‧金屬配線
8‧‧‧第3接著構件
9‧‧‧半導體晶片
10、11‧‧‧金屬構件
12‧‧‧第4接著構件
13‧‧‧第5接著構件

Claims (12)

  1. 一種接合體，係接著金屬、陶瓷、半導體的任一種的第1構件與第2構件之接合體，其特徵為：經由設在前述第1構件的面之接著構件來接著前述第2構件，前述接著構件係含有：含V2 O5 的無鉛玻璃及金屬粒子。
  2. 如申請專利範圍第1項所記載之接合體，其中，將前述第1構件設為半導體或金屬，將前述第2構件設為金屬或陶瓷。
  3. 如申請專利範圍第1或2項所記載之接合體，其中，前述無鉛玻璃係V2 O5 為35~55質量%，TeO2 為15~35質量%，P2 O5 為4~20質量%，及Fe2 O3 、WO3 、MoO3 、MnO2 、Sb2 O3 、Bi2 O3 、BaO、K2 O、ZnO的其中1種以上為5~30質量%。
  4. 如申請專利範圍第1或2項所記載之接合體，其中，前述無鉛玻璃係Ag2 O為10~60質量%，V2 O5 為5~65質量%，TeO2 為15~50質量%。
  5. 如申請專利範圍第1或2項所記載之接合體，其中，前述無鉛玻璃係結晶質比非晶質更少，其結晶化度為30%以下。
  6. 如申請專利範圍第1或2項所記載之接合體，其中，前述金屬粒子為含有Ag或Sn焊錫的至少任一種，佔前述接著構件的30~95體積%。
  7. 一種半導體模組，係具備基底金屬、陶瓷基板、金屬配線及半導體晶片的半導體模組，其特徵為：經由設在前述基底金屬的面之第1接著構件來接著前述陶瓷基板，經由設在前述陶瓷基板的面之第2接著構件來接著前述金屬配線，經由設在前述金屬配線的面之第3接著構件來接著前述半導體晶片，前述第1接著構件、第2接著構件及第3接著構件係含有：含V2 O5 的無鉛玻璃及金屬粒子。
  8. 如申請專利範圍第7項所記載之半導體模組，其中，前述第1接著構件的無鉛玻璃或第2接著構件的無鉛玻璃或第3接著構件的無鉛玻璃係V2 O5 為35~55質量%，TeO2 為15~35質量%，P2 O5 為4~20質量%，及Fe2 O3 、WO3 、MoO3 、MnO2 、Sb2 O3 、Bi2 O3 、BaO、K2 O、ZnO的其中1種以上為5~30質量%。
  9. 如申請專利範圍第7或8項所記載之半導體模組，其中，前述第1接著構件的無鉛玻璃或第2接著構件的無鉛玻璃或第3接著構件的無鉛玻璃係Ag2 O為10~60質量%，V2 O5 為5~65質量%，TeO2 為15~50質量%。
  10. 如申請專利範圍第7或8項所記載之半導體模組，其中，前述V2 O5 係結晶質比非晶質更少，其結晶化度為30%以下。
  11. 如申請專利範圍第7或8項所記載之半導體模組，其中，前述第1接著構件的金屬粒子或前述第2接著構件的金屬粒子為含有Ag或Sn焊錫的至少任一種，佔前 述第1接著構件或前述第2接著構件的30~95體積%。
  12. 如申請專利範圍第7或8項所記載之半導體模組，其中，前述第3接著構件的金屬粒子為Ag，佔前述第3接著構件的60~95體積%。
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WO2013111434A1 (ja) 2013-08-01
KR20140104469A (ko) 2014-08-28
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US20150008573A1 (en) 2015-01-08
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