CN104159872A - 接合体及半导体模块 - Google Patents

接合体及半导体模块 Download PDF

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Publication number
CN104159872A
CN104159872A CN201280060767.2A CN201280060767A CN104159872A CN 104159872 A CN104159872 A CN 104159872A CN 201280060767 A CN201280060767 A CN 201280060767A CN 104159872 A CN104159872 A CN 104159872A
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China
Prior art keywords
adhering part
quality
glass
metal
conjugant
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CN201280060767.2A
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English (en)
Inventor
泽井裕一
内藤孝
青柳拓也
藤枝正
森睦宏
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Hitachi Ltd
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Hitachi Ltd
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Publication of CN104159872A publication Critical patent/CN104159872A/zh
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    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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Abstract

本发明提供将金属、陶瓷、半导体任一种粘接的接合体，能够使接合体的粘接性和热传导性提高。接合体，将金属、陶瓷、半导体中任一种的第一部件和第二部件粘接而成，其经由设于所述第一部件的面的粘接部件粘接所述第二部件，所述粘接部件包含含有V2O5的玻璃和金属粒子。半导体模块，具备：基底金属、陶瓷基板、金属配线以及半导体芯片，其经由设于所述基底金属的面的第一粘接部件粘接所述陶瓷基板，经由设于所述陶瓷基板的面的第二粘接部件粘接所述金属配线，经由设于所述金属配线的面的第三粘接部件粘接所述半导体芯片，所述第一粘接部件、第二粘接部件以及第三粘接部件包含含有V2O5的玻璃和金属粒子。

Description

接合体及半导体模块
技术领域
本发明涉及将金属、陶瓷、半导体接合而成的接合部件和使用了该接合部件的半导体模块。
背景技术
一般而言，半导体模块在基底金属上粘接陶瓷基板，在陶瓷基板上粘接金属配线，再在该金属配线上进行半导体芯片等元件粘接来制造。在此，将用于粘接的粘接剂称为芯片焊接材料。现有的功率器件用封装的元件粘接以焊锡接合为主流，但是，从无铅化的必要性考虑，混合了Ag粉末和树脂的导电性膏及无铅焊锡作为代替材料使用。
关于与半导体芯片接合，半导体芯片等半导体元件有高集成化及微细化的趋势，随之有每单位面积的发热量增加的趋势。因此，在搭载有半导体元件的半导体模块中，需要使由半导体元件产生的热高效地向外部散失，芯片焊接材料(die-bonding materials)的热传导性的提高成为课题。
另外，陶瓷基板接合主要对于AlN及Si3N4等陶瓷基板进行敷金属，通过无铅焊锡将敷金属层和半导体芯片、或敷金属层和基底金属接合。需要实现牢固的敷金属层的形成方法、基板和半导体芯片的热膨胀系数差的缓和、基板的散热性的提高、耐热循环性等长期可靠性的提高。
专利文献1中对无铅焊锡膏进行了记载，提供含有Bi焊锡粉和Cu金属粉的热传导率52W/mK的无铅焊锡膏。
现有技术文献
专利文献
专利文献1:日本特开2011-251329号公报
发明内容
发明所要解决的课题
但是，无铅焊锡如果对陶瓷基板不进行预先的敷金属处理，则陶瓷基板和金属配线的粘接性降低。另外，在将同一无铅焊锡用于金属配线和半导体芯片的接合的情况下，热传导率降低。
本发明的目的在于，使将金属、陶瓷、半导体的任一种粘接的接合体的粘接性和热传导性提高。
用于解决课题的手段
为实现所述目的，本发明提供接合体，将金属、陶瓷、半导体中任一种的第一部件和第二部件粘接而成，其特征在于，经由设于所述第一部件的面的粘接部件粘接所述第二部件，所述粘接部件包含含有V2O5的玻璃和金属粒子。
另外，在具备基底金属、陶瓷基板、金属配线以及半导体芯片的半导体模块中，其特征在于，经由设于所述基底金属的面的第一粘接部件粘接所述陶瓷基板，经由设于所述陶瓷基板的面的第二粘接部件粘接所述金属配线，经由设于所述金属配线的面的第三粘接部件粘接所述半导体芯片，所述第一粘接部件、第二粘接部件以及第三粘接部件包含含有V2O5的玻璃和金属粒子。
发明效果
根据本发明，能够提高粘接性和热传导性。
附图说明
图1是接合体的构造剖面图；
图2是半导体模块的构造剖面图；
图3是LED照明装置的构造剖面图；
图4是半导体装置的构造剖面图；
图5是玻璃的DTA曲线；
图6是模式剪强度试验示意图。
具体实施方式
如图1所示，本发明涉及将金属、陶瓷、半导体任一种的部件(第一部件1-1、第二部件1-2)粘接的接合体，将二者接合的接合部件2含有玻璃和金属粒子。作为能够与金属、陶瓷、半导体任一种均粘接的玻璃，以含有氧化矾(V2O5)为前提。图中上下方向的厚度在部件的面内的任何位置都不是均一的。另外，粘接部件2也可以不与两部件的粘接的一侧的整个面粘接，反之也可以从两部件伸出。总之，只要粘接部件2在第一部件1-1和第二部件1-2之间以层状形成且密接即可。
另外，本发明的接合体在对接合体通电，成为在第一部件1-1和第二部件1-2之间产生温度差的运转状态的情况下，不仅将两部件粘接，而且热可以从两部件中的高温侧的部件朝向低温侧的部件通过粘接部件2移动。因此，例如在将第一部件1-1设为发热体、将第二部件1-2设为散热体的情况下，热能够从第一部件1-1经由粘接部件2向第二部件1-2散失。
接合部件2以作为膏提供、使用为前提，在将膏涂敷、干燥后进行预烧，除去有机成分，之后，经过将部件彼此接合的烧结工序获得接合体。因此，玻璃希望其结晶质比非晶质少，要再现良好的流动性，希望结晶化度为30％以下。
为了尽可能地不使玻璃结晶化，将TeO2的含量设为至少15质量％以上。另外，为了防止玻璃的结晶化而添加BaO及WO3。具体而言，玻璃中V2O5为35～55质量％、TeO2为15～35质量％、P2O5为4～20质量％及Fe2O3、WO3、MoO3、MnO2、Sb2O3、Bi2O3、BaO、K2O、ZnO中的一种以上为5～30质量％。
另外，要降低玻璃的软化点，在将TeO2的含量设为至少15质量％以上的同时也将Ag2O设为另一种成分。具体而言，玻璃中含有10～60质量％的Ag2O、5～65质量％的V2O5、15～50质量％的TeO2。在上述组成范围内越增加Ag2O的含量，越能够使软化点低温化。
为了对上述接合部件赋予热传导性，混合与含有氧化矾的玻璃不发生反应的金属粒子。构成上述接合部件的金属粒子为Ag或含有Sn的焊锡的至少任一种，占上述接合部件的30～95体积％。
另外，构成上述接合部件的金属粒子为Ag，占上述接合部件的60～95体积％。
如图2所示，应用了本发明的方式的1种为半导体模块具备：经由第一粘接层4粘接于基底金属3的上面的陶瓷基板等绝缘层5、经由第二粘接层6粘接于该绝缘层5的上面的金属配线7、经由第三粘接层8粘接于该金属配线7上的半导体芯片9。在该绝缘层5和第一及第二粘接层的界面没有敷金属层，第一、第二及第三粘接层含有氧化矾玻璃及金属粒子。作为绝缘层5例如可以举出AlN及Si3N4等热传导率高的陶瓷基板。
即，在本发明的半导体模块含有第一、第二及第三粘接层，但是，当然也可以仅在第一、第二或第三粘接层的任一个中适用本发明。
粘接部件只要设于被粘接的部件之间即可。图中，在被粘接的部件中，以粘接部件的面积比粘接面小的一方的面积(在绝缘层5和金属配线7中为属配线7、在金属配线7和半导体芯片9中为半导体芯片9)大的方式描绘，但是，粘接部件的面积也可以比粘接面小的一方的面积小。另外，各部件只要在至少一个面与粘接部件相接即可，但是，即使粘接层到达侧面等多个面，也能够更牢固地粘接。
作为半导体模块，例如可以举出功率器件，在施加大的振动或长期的振动的部位，有时设置于成为高温的部位。因此，需要将各零件彼此牢固地粘接。在本发明中，软化的氧化矾玻璃与各零件以高的濡湿性而密接固化，因此，能够将基底金属3、绝缘层5、金属配线7、半导体芯片9各部件牢固地粘接。因此，即使零件中含有陶瓷，也能够不进行敷金属处理，而提高零件彼此的粘接性。
另外，用于半导体模块的粘接部件需要经由粘接部分能够散热。因此，在本发明的粘接部件中含有金属粒子，能够提高粘接剂的热传导率。
粘接部件中含有的玻璃以含有V2O5为前提。具体而言，V2O5为35～55质量％、TeO2为15～35质量％、P2O5为4～20质量％及Fe2O3、WO3、MoO3、MnO2、Sb2O3、Bi2O3、BaO、K2O、ZnO中的一种以上为5～30质量％。这样组成范围的玻璃的玻璃化转变点为330℃以下，因此，即使在500℃以下的温度下也能够充分软化，因此，基底金属3、绝缘层5、金属配线7、半导体芯片9均能够良好地粘接。
通常，玻璃为氧化物，因此，在混合金属粒子进行加热时，在大部分情况下金属粒子氧化。构成本发明的氧化矾玻璃也同样，只要与Cu、Fe、Al等金属粉末混合进行加热，则金属粉末就进行氧化。另一方面，Ag作为难以氧化的金属是已知的，即使与构成本发明的氧化矾玻璃混合并加热，也不被氧化。而且，发明人发现即使将Sn系无铅焊锡(Sn-Ag-Cu系焊锡或Sn-Cu-Ni系焊锡)粉末和氧化矾玻璃混合并加热，也几乎不被氧化。
金属粒子可以包含Ag或含Sn焊锡(Sn-Ag-Cu系焊锡)的至少任一种。Ag或含Sn焊锡即使与氧化矾玻璃混合也难以氧化，因此，形成粘接部件时的热传导率难以降低。通常，第二粘接部件6不需要导电性，因此，除了电的良导体的Ag以外，也可以是含有Sn的焊锡粉末，也可以将两者混合。另外，金属粒子可以占第二粘接部件6的30～95体积％。通过制成这样结构，能够将绝缘层5和金属配线7良好地粘接，且能够具有适度的热传导率。而且，如果金属粒子占第二粘接部件6的60～95体积％，则热传导率进一步提高，能够使半导体芯片9的发热更快速地消散。
另外，玻璃中也可以含有10～60质量％的Ag2O、5～65质量％的V2O5、15～50质量％的TeO2。通过设为这样的组成范围，能够使玻璃化转变点更低温化至250℃以下，并且，能够确保充分的热稳定性，即使在400℃以下的温度下也能够将基底金属3、绝缘层5、金属配线7、半导体芯片9任一种良好地粘接。
仅在第三粘接层8应用了本发明的半导体模块具备经由第三粘接层8粘接于金属配线7上的半导体芯片9。第三粘接部件8含有氧化矾玻璃及金属粒子。在此，该金属粒子为Ag，占第三粘接部件8的60～95体积％。通过设为这样结构，能够良好地粘接金属配线7和半导体芯片9，且能够赋予高的热传导率和低的电阻率。
另外，如图2所示，在用金属部件10、11连接半导体芯片9和金属配线7时，可以使用本发明的粘接部件。即，在上述构成的半导体模块中，经由第四粘接部件12、第五粘接部件13用金属部件10、11将半导体芯片9和金属配线7连接。在此，该金属粒子为Ag，占第四粘接部件的60～95体积％。通过设为这样结构，能够良好地粘接金属配线7和半导体芯片9，且能够赋予高的热传导率和低的电阻率。
第三粘接部件8、第四粘接部件12、第五粘接部件13的氧化矾玻璃的组成可以与第二粘接部件6同样。
作为本发明其它的方式，图3表示LED照明装置的构造剖面图。LED照明装置具备：经由粘接部件15将LED发光元件16粘接于基板14上的发光模块和向该发光模块供给电力的电源电路部(未图示)。对于粘接部件15而言与上述半导体模块同样。
LED发光元件因热而容易劣化，因此，伴随发光的发热必须快速向外部消散。因此，通过将金属粒子设为Ag，制成占粘接部件的60～95体积％的结构，能够良好地粘接基板和LED发光元件，且能够具有高的热传导率。
作为本发明的其它方式，图4表示个人电脑的主板等半导体装置。该半导体装置具备在基板17上经由粘接部件18将CPU19与散热片20连接的微机IC。对于粘接部件18而言与上述半导体模块同样。
更详细而言，粘接部件18中含有的玻璃的特征在于，V2O5为35～55质量％、TeO2为15～35质量％、P2O5为4～20质量％及Fe2O3、WO3、MoO3、MnO2、Sb2O3、Bi2O3、BaO、K2O、ZnO中的1种以上为5～30质量％。这样组成范围的玻璃的玻璃化转变点为330℃以下，因此，即使为500℃以下的温度也能够充分地软化，因此，在500℃以下的温度下能够良好地粘接基板和LED发光元件、或CPU和散热片等。
或者，其特征在于，含有10～60质量％的Ag2O、5～65质量％的V2O5、15～50质量％的TeO2。通过设为这样组成范围，能够使玻璃化转变点低温化为250℃以下，并且，能够确保充分的热的稳定性，在400℃以下的温度下能够良好地粘接基板和LED发光元件、或CPU和散热片等。
实施例1
在本实施例中，制作具有各种的组成的氧化矾玻璃，研究了该玻璃的软化点和耐湿性。
(玻璃的制作)
制作了具有表1所示组成的玻璃(VTC2-01～03及VTC3-01～03)。表中的组成以各成分的氧化物换算的质量比率表示。作为初始原料，使用(株)高纯度化学研究所制的氧化物粉末(纯度99.9％)。在一部分的试样中，作为Ba源及P源使用了Ba(PO3)2(磷酸钡、Rasa工业(株)制)。
以表1所示的质量比混合各初始原料粉末，将合计200g的混合粉末装入坩埚内。在此，在原料中的Ag2O的比率为40质量％以下的情况下使用白金坩埚，在40质量％以上的情况下使用氧化铝坩埚。在混合时，考虑避免向原料粉末的过分的吸湿，使用金属制匙在坩埚内混合。
将放入了原料混合粉末的坩埚设置于玻璃溶融炉内，进行加热·融解。以10℃/min的升温速度升温，在设定温度(700～900℃)，一边搅拌融解的玻璃一边保持1小时。之后，从玻璃溶融炉取出坩埚，向预先加热到150℃的石墨铸型中浇铸玻璃。接着，将浇铸的玻璃向预加热到变形矫正温度的变形矫正炉移动，通过保持1小时而除去了变形后，以1℃/min的速度冷却至室温。将冷却至室温的玻璃粉碎，制作具有表中所示组成的玻璃的粉末。
(软化点的评价)
对上述所得的各玻璃粉末，通过示差热分析(DTA)测定了特性温度。DTA测定在将参照试样(α-氧化铝)及测定试样的质量分别设定为650mg，在大气中以5℃/min的升温速度进行。在本实施例中，将玻璃的DTA曲线的第二吸热峰值温度设为软化点Tｓ(参照图5)。表1一并表示结果。
[表1]
实施例2
在本实施例中，对AlN及Si3N4那样的陶瓷基板和金属材料的粘接进行了研究。
使用在实施例1中制作的玻璃VTC2-01按以下的顺序制作了接合样品。首先，将VTC2-01粉碎，制成平均粒子径0.5μm以下的微细粉末。将粉碎的VTC2-01和Ag粉末或Sn-Ag-Cu系焊锡粉末以规定的比率配合，通过乳钵混合15min，制作混合粉末。
(热传导率)
将各种混合粉末使用模型制成直径10mm、厚度2mm的成形体。使用电马弗炉，将制作好的成形体在大气中进行450℃×30min烧结，制作用于评价第一粘接层的热传导率的模拟样品。使用这样制作的烧结体试样，通过氙闪光法测定热传导率。氙闪光法是指对模拟样品的单面照射脉冲光，根据背面温度的时间变化测定热扩散率，以此为基础算出热传导率。表2汇总表示各样品的热传导率。
之后，将各种混合粉末、树脂粘合剂和溶剂混合，经由自动混合器(消泡混合太郎)混合，制作芯片焊接材料膏。作为树脂粘合剂使用乙基纤维素，作为溶剂使用丁基卡必醇乙酸酯。使用这样制作的芯片焊接材料膏，通过以下所示的方法评价粘接强度。
(粘接强度)
在陶瓷基板上，在5×5mm2的范围内印刷芯片焊接材料膏，在150℃使之干燥后，在大气中进行450℃×30min预烧结。之后，将切成4×4mm2的Cu、Al、AlSiC板载置于芯片焊接材料上，在其上加入100g的部分铜，在大气中进行450℃×30min烧结。
这样，制作了在陶瓷基板上粘接了金属板的模式剪试验样品。通过模式剪强度试验评价金属板和陶瓷基板的粘接强度。在此，如图6所示，模式剪强度试验是指将经由粘接部件17接合于基板上的金属板18通过专用夹具19从横侧向水平方向按压，测定金属板从基板剥离的负荷值、即金属板的剪切强度(模式剪强度；N)的试验方法。表2中汇总表示作为陶瓷基板使用AlN基板的情况的评价结果，表3中汇总作为陶瓷基板使用Si3N4基板的情况的评价结果。在本实施例中，将粘接强度＞20Mpa且热传导率＞10W/mK的样品设为合格。
如表可知，实施例的芯片焊接材料表示在没有敷金属层的陶瓷基板上能够以高的热传导率和粘接强度粘接金属板。
[表2]
[表3]
※没有敷金属层
实施例3
在本实施例中对Cu基板和Si半导体芯片的粘接进行了研究。
使用在实施例1中制作的玻璃VTC3-01按以下的顺序制作接合样品。首先将VTC3-01粉碎，制成平均粒子径为0.5μm以下的微细粉末。将粉碎的VTC3-01和Ag粉末以规定的比率配合，通过乳钵混合15min，制作混合粉末。
(热传导率及电阻率)
将各种混合粉末使用模型制成直径10mm、厚度2mm的成形体。使用电马弗炉，将制作的成形体在大气中烧结350℃×30min，制成用于评价第三粘接层的热传导率及电阻率的模拟样品。
使用三菱化学(株)简易型低电阻率计(Loresta AX；MCP-T370型)测定同一烧结体样品的电阻率。之后使用同一样品，经由氙闪光法测定热传导率。
(粘接强度)
将各种混合粉末、树脂粘合剂和溶剂混合，与实施例2同样地制作芯片焊接材料膏。在陶瓷基板上，在5×5mm2的范围内印刷芯片焊接材料膏，在150℃使之干燥后，在大气中进行350℃×30min预烧结。之后，将切成4×4mm2的Si半导体芯片载置于芯片焊接材料上，在其上加入100g的部分铜，在大气中进行350℃×30min烧结，制成在Cu基板上粘接有Si半导体芯片的模式剪试验样品。通过模式剪强度试验评价Si半导体芯片和Cu基板的粘接强度。表4汇总评价结果。
在本实施例中，将粘接强度＞20Mpa、热传导率＞50W/mK且电阻率＜1.0×10-5Ω·cm的样品设为合格。
如表4中可知，实施例的芯片焊接材料表示在没有敷金属层的陶瓷基板上能够以高的热传导率和粘接强度粘接。
[表4]
符号说明
1-1  第一部件
1-2  第二部件
2、15、18、21  粘接部件
3  基底金属
4  第一粘接部件
5  绝缘层
6  第二粘接部件
7  金属配线
8  第三粘接部件
9  半导体芯片
10、11  金属部件
12  第四粘接部件
13  第五粘接部件
14  LED搭载基板
16  LED发光元件
17  基板
19  CPU
20  散热片
22  芯片
23  专用夹具

Claims (17)

1.接合体，其为将金属、陶瓷、半导体中任一种的第一部件和第二部件粘接而成，其特征在于，
经由设于所述第一部件的面的粘接部件粘接所述第二部件，所述粘接部件包含含有V2O5的玻璃和金属粒子。
2.如权利要求1所述的接合体，其特征在于，对接合体通电，在所述第一部件和所述第二部件之间产生温度差。
3.如权利要求1或2所述的接合体，其特征在于，将所述第一部件设为发热体，将所述第二部件设为散热体。
4.如权利要求1～3中任一项所述的接合体，其特征在于，将所述第一部件设为半导体或金属，将所述第二部件设为金属或陶瓷。
5.如权利要求1～4中任一项所述的接合体，其特征在于，所述玻璃中，V2O5为35～55质量％、TeO2为15～35质量％、P2O5为4～20质量％及Fe2O3、WO3、MoO3、MnO2、Sb2O3、Bi2O3、BaO、K2O、ZnO中的一种以上为5～30质量％。
6.如权利要求1～4中任一项所述的接合体，其特征在于，所述玻璃中，Ag2O为10～60质量％、V2O5为5～65质量％、TeO2为15～50质量％。
7.如权利要求5或6所述的接合体，其特征在于，所述V2O5的结晶质比非晶质少，结晶化度为30％以下。
8.如权利要求1～7中任一项所述的接合体，其特征在于，所述金属粒子为Ag或含Sn焊锡的至少任一种，占所述粘接部件的30～95体积％。
9.如权利要求1～7中任一项所述的接合体，其特征在于，所述金属粒子为Ag，占所述粘接部件的60～95体积％。
10.半导体模块，具备：基底金属、陶瓷基板、金属配线以及半导体芯片，其特征在于，
经由设于所述基底金属的面的第一粘接部件粘接所述陶瓷基板，经由设于所述陶瓷基板的面的第二粘接部件粘接所述金属配线，经由设于所述金属配线的面的第三粘接部件粘接所述半导体芯片，
所述第一粘接部件、第二粘接部件以及第三粘接部件包含含有V2O5的玻璃和金属粒子。
11.半导体模块，其特征在于，在权利要求9中，所述第一粘接部件的玻璃或第二粘接部件的玻璃或第三粘接部件的玻璃中，V2O5为35～55质量％、TeO2为15～35质量％、P2O5为4～20质量％及Fe2O3、WO3、MoO3、MnO2、Sb2O3、Bi2O3、BaO、K2O、ZnO中的一种以上为5～30质量％。
12.半导体模块，其特征在于，在权利要求9中，所述第一粘接部件的玻璃或第二粘接部件的玻璃或第三粘接部件的玻璃中，Ag2O为10～60质量％、V2O5为5～65质量％、TeO2为15～50质量％。
13.如权利要求11或12所述的接合体，其特征在于，所述V2O5的结晶质比非晶质少，结晶化度为30％以下。
14.如权利要求10～13中任一项所述的半导体模块，其特征在于，所述第一粘接部件的金属粒子或所述第二粘接部件的金属粒子为Ag或含Sn焊锡的至少任一种，占所述第一粘接部件或所述第二粘接部件的30～95体积％。
15.如权利要求10～13中任一项所述的半导体模块，其特征在于，所述第三粘接部件的金属粒子为Ag，占所述第三粘接部件的60～95体积％。
16.如权利要求10所述的半导体模块，其特征在于，所述半导体芯片为LED发光元件。
17.如权利要求10所述的半导体模块，其特征在于，所述半导体芯片为CPU，所述基底基板为散热片。
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US9196563B2 (en) 2015-11-24
DE112012005758T5 (de) 2014-11-20
WO2013111434A1 (ja) 2013-08-01
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US20150008573A1 (en) 2015-01-08

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