TWI422069B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI422069B
TWI422069B TW99101816A TW99101816A TWI422069B TW I422069 B TWI422069 B TW I422069B TW 99101816 A TW99101816 A TW 99101816A TW 99101816 A TW99101816 A TW 99101816A TW I422069 B TWI422069 B TW I422069B
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Taiwan
Prior art keywords
silver
substrate
semiconductor
semiconductor light
semiconductor element
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TW99101816A
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English (en)
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TW201041188A (en
Inventor
Masafumi Kuramoto
Satoru Ogawa
Miki Niwa
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Nichia Corp
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Publication of TW201041188A publication Critical patent/TW201041188A/zh
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Publication of TWI422069B publication Critical patent/TWI422069B/zh

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Description

半導體裝置及其製造方法
本發明係關於一種半導體裝置及其製造方法，尤其是關於一種半導體元件之接合方法(以下亦稱為「晶粒黏著方法」)。
已知有各種安裝電晶體、IC(integrated circuit，積體電路)或LSI(large scale integrated circuit，大型積體電路)等半導體元件之接合方法。又，亦已知有各種適合於半導體元件中的發光二極體(以下亦稱為「LED」)或雷射二極體(以下亦稱為「LD」)等發光之半導體發光元件之接合方法。
先前，對半導體元件之晶粒黏著方法大致分類可分為以下兩種：使用環氧樹脂接著劑之接合方法(以下稱為「樹脂接合」)；及利用於300℃以上之高溫下具有共晶點之共晶金屬之接合方法(以下稱為「共晶接合」)(例如參照專利文獻1及2)。可考慮與安裝半導體元件之引線框架材料或基板材料之熱膨脹行為之匹配性、或可靠性、價格等而決定區分使用上述方法。例如對於價格優先之小型行動設備等之液晶背光用發光二極體等，採用樹脂接合，對於要求長壽命之照明用發光二極體或要求高可靠性之雷射二極體等，通常採用共晶接合。
作為用於樹脂接合之樹脂，主要使用環氧樹脂等熱硬化性樹脂。分散有如銀之類的導電性粉末之銀漿亦為樹脂接合之一種。樹脂接合係將液狀之環氧樹脂加熱至150~200℃使其硬化者。樹脂接合具有可於150℃~200℃之低溫下容易地硬化之簡便性。尤其是對於預先在引線框架上成形之通用表面安裝型半導體裝置，可避免熱硬化性樹脂之熱劣化或熱塑性樹脂之熔融。
然而，由於近年來因發光二極體、雷射二極體等之光能提高與投入電力上升所引起的發熱之影響，而產生用於樹脂接合之樹脂本身發生經時劣化而變色或接合強度下降等問題。又，因係於低溫下進行硬化，故作為樹脂彈性模數之溫度指標之玻璃轉移溫度未達到安裝半導體裝置作為電子零件時之焊錫安裝溫度，因此會由於安裝焊錫時之熱衝擊而導致樹脂強度下降，從而容易發生剝離。進而，僅使用環氧樹脂之樹脂接合或使用銀漿之樹脂接合之任一者均存在如下問題：熱導率較低，散熱性不能謂之充分，發光二極體等無法點亮。
另一方面，利用金與錫之合金之共晶接合可解決上述樹脂接合之問題。
然而，共晶接合於接合時需要300℃以上之加熱，因此於PPA(polyphthalamide，聚鄰苯二甲醯胺)等通常使用之樹脂封裝體中，因難以耐受高溫而無法使用。又，即便於安裝發光二極體之配線基板或引線框架之表面施予具有較高之反射率之鍍銀層，亦由於共晶金屬之反射率較低，而無法實現光出射效果之提高。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2004-128330號公報
[專利文獻2]日本專利特開2006-237141號公報
因此，本發明係鑒於上述問題而發明者，本發明之目的在於提供一種可靠性較高之半導體元件之安裝方法，且提供一種散熱性較高之半導體元件之安裝方法。藉此，可提供一種廉價之半導體裝置及簡便之半導體裝置之製造方法。
本發明係關於一種半導體裝置之製造方法，該半導體裝置係將施於基體表面之銀或氧化銀、與施於半導體元件表面之銀或氧化銀接合而成者，該方法包括以下步驟：以施於半導體元件表面之銀或氧化銀接觸於施於基體表面之銀或氧化銀上之方式配置半導體元件；對半導體元件或基體施加壓力或施加超音波振動，將半導體元件與基體暫時接合；以及對半導體元件及基體施加150℃~900℃之溫度，將半導體元件與基體正式接合。藉此，因不使用易劣化之構件，故而可提供一種可靠性較高之半導體裝置之製造方法。又，因係將半導體元件與基體直接接合，故而導熱性較高，可效率良好地將半導體元件中所產生之熱傳遞至基體。進而，由於即便不使用特殊之機械亦可安裝半導體元件，故而可提供一種簡便之半導體裝置之製造方法。
上述正式接合之溫度較好的是150℃~400℃之溫度範圍，更好的是150℃~320℃之溫度範圍。其原因在於可於相對低溫下進行接合。又，其原因在於半導體元件不會受到破壞，且安裝有半導體元件之封裝體(package)或安裝基板不會產生熱變形。
上述暫時接合之步驟與上述正式接合之步驟宜同時進行。其原因在於可更簡便地安裝半導體元件。
上述正式接合之步驟宜於大氣中或氧環境中進行。藉此，可進一步促進銀之熔著反應。
本發明係關於一種半導體裝置，其係將施於基體表面之銀或氧化銀、與施於半導體元件表面之銀或氧化銀直接接合，且晶片剪切強度為13MPa~55MPa。先前之樹脂接合及共晶接合等於基體與半導體元件之間存在樹脂接著劑、銀漿、共晶金屬等，相對於此，本發明中係將基體與半導體元件直接接合。由於不將使用金與錫之合金之共晶構件、環氧樹脂或銀漿之類的構件介於半導體元件與基體之間，故而可提供一種可靠性較高之半導體裝置。尤其是可提供一種晶片剪切強度較高的難以剝離之半導體裝置。
上述半導體元件亦可使用半導體發光元件。因係將半導體發光元件與基體直接接合，故而可提供一種不會發生光劣化之半導體裝置。對於發光二極體或雷射二極體等半導體發光元件以外之電晶體或IC、LSI、電容器、曾納二極體(zener diode)等亦可應用本發明。
上述半導體元件亦可使用如下者：於透光性無機基板上形成有半導體層，於上述透光性無機基板之與形成有上述半導體層之側相反之側施有第1銀，且設置有與上述第1銀接合之緩衝構件，於上述緩衝構件之表面施有上述銀或氧化銀。藉此，可提高來自半導體裝置之光出射效率。又，可減少透光性無機基板與第1銀之界面之剝離，可實現晶片剪切強度之提高。
藉由採用上述構成，可提供一種不包含會發生劣化之構件的可靠性較高且廉價之半導體裝置及其製造方法。又，因可將半導體元件與基體直接接合，故而可提供一種散熱性較高之半導體裝置。進而，可提供一種簡便之半導體裝置之製造方法。
本發明者等人發現，若於作為氧化劑之金屬氧化物之存在下或者氧、臭氧或大氣環境下，對含有具有0.1μm~15μm之平均粒徑之銀粒子的組合物進行焙燒，則即便於例如150℃附近之溫度下銀粒子亦熔著，從而可獲得導電性材料。另一方面，若於氮環境下，對含有具有0.1μm~15μm之平均粒徑之銀粒子的組合物進行焙燒，則於150℃附近之低溫下無法獲得導電性材料。根據上述發現，本發明者等人完成了製造導電性材料之方法，該方法包括如下步驟：於作為氧化劑之金屬氧化物之存在下或者氧、臭氧或大氣環境下，對含有具有0.1μm~15μm之平均粒徑之銀粒子的組合物進行焙燒。
又，本發明者等人於研究本發明之詳細機制之過程中，為了確認表面未經有機污染之銀之接合性，而嘗試於氧存在下對平滑之銀濺鍍面間進行低溫接合，發現即便不為銀粒子，藉由對接合面施加壓力或施加超音波振動進行暫時接合後實施低溫加熱，亦可獲得充分之接合。本發明者等人應用該發現開發出具有較高可靠性之半導體裝置，因此完成本發明。又，同時發現上述方法作為提供廉價之半導體裝置之方法亦有用。
於本發明之晶粒黏著方法中，形成接合之機制並不明確，可進行如下推測。可推測，當於作為氧化劑之氧、臭氧或大氣環境下，使由銀濺鍍、銀蒸鍍、銀電鍍面等所形成之銀塗佈面接觸時，銀塗佈面之一部分被局部氧化，藉由該氧化而形成之氧化銀在與銀塗佈面接觸之部分以觸媒之方式交換氧，經過反覆進行氧化還原反應之步驟而形成接合。又，可推測藉由將銀塗佈面預先氧化而形成氧化銀，則於惰性氣體環境中亦能夠以相同之機制形成接合。因推測係利用上述機制而形成接合，故而若利用本發明之晶粒黏著方法來製造半導體裝置，則可提供一種具有較高之可靠性且廉價之半導體裝置。
本發明係關於一種半導體裝置之製造方法，該半導體裝置係將施於基體表面之銀或氧化銀、與施於半導體元件表面之銀或氧化銀接合而成者，該方法包括以下步驟：以施於半導體元件表面之銀或氧化銀接觸於施於基體表面之銀或氧化銀上之方式配置半導體元件；對半導體元件或基體施加壓力或施加超音波振動，將半導體元件與基體暫時接合；以及對半導體元件及基體施加150℃~900℃之溫度，將半導體元件與基體正式接合。對半導體元件及基體施加之溫度較好的是150℃~400℃，特別好的是150℃~320℃。本發明之製造方法可對使用例如發光二極體、雷射二極體等半導體發光元件之半導體裝置賦予較高之發光效率。又，由於未介隔接合材料，故而可獲得較低之電阻或熱阻，因此可提高可靠性。又，因可於與樹脂接合相同之溫度範圍內進行接合，因此可避免半導體裝置中所使用之塑膠構件之熱劣化。因接合構件中不使用樹脂，故而可改善半導體裝置之壽命。進而，因步驟簡便且貴金屬之使用量極少，故而可廉價地製造半導體裝置。
基體可使用引線框架、或包含金屬配線之有機或無機基板等，且於引線框架之表面、金屬配線之表面塗佈銀。又，亦可藉由對基體整體或僅安裝半導體元件之部位進行氧化處理，而使表面形成為氧化銀。半導體元件之接合面之表面係與基體同樣地經實施銀塗佈，而不論導電部位或絕緣部位。又，亦可與上述基體同樣地藉由對表面之銀塗層進行氧化處理而形成為氧化銀。
對半導體元件或基體施加壓力或超音波振動而進行安裝。壓力或超音波振動之施加時間依賴於基體之銀或氧化銀之表面狀態，可以充分地暫時接合之方式而任意設定。此時，亦可預先將基體預熱至150℃~900℃、更好的是150℃~400℃、進而更好的是150℃~320℃。關於暫時接合時之環境，銀-銀接合時較好的是含有氧、臭氧之氧化環境，更好的是低成本之大氣條件。銀-氧化銀接合、氧化銀-氧化銀接合時亦可為不含氧、臭氧之惰性氣體環境，較好的是低成本之氮環境。
對經暫時接合之基體及半導體元件施加150℃~900℃之溫度，使接合點增加且使銀相互擴散，從而使接合變得牢固而將其等正式接合。由於金屬擴散為溫度之函數，因此越為高溫，則可越快速地提高接合強度，但為了避免半導體裝置中所使用之塑膠構件產生氧化劣化或熔融等，理想的是將通用之熱塑性樹脂之熔點上限即320℃附近作為上限溫度。其中，於基體使用具有耐熱性之陶瓷基板等之情形時，可施加高達400℃附近之溫度。對於下限溫度，為了於實用之時間範圍內獲得牢固之接合，下限溫度必需為150℃以上。
暫時接合之步驟與正式接合之步驟宜同時進行。藉由施加壓力或超音波振動將半導體元件安裝於基體上，且於該狀態下施加150℃~900℃、較好的是150℃~400℃、更好的是150℃~320℃之溫度使接合點增加且使銀相互擴散，可實現牢固之接合。由於藉此可使接合點大幅增加，故而可期待接合強度之提高。
正式接合之步驟宜於大氣中或氧環境中進行。用以實施正式接合之加熱時之環境宜為大氣中或氧環境中。其原因在於，藉此接合點增加，可期待接合強度之提高。尤其是關於正式接合時之環境，銀-銀接合時較好的是含有氧、臭氧之氧化環境，更好的是低成本之大氣條件。銀-氧化銀接合、氧化銀-氧化銀接合時可為惰性氣體環境，較好的是低成本之氮環境。
本發明係關於一種半導體裝置，其係將施於基體表面之銀或氧化銀、與施於半導體元件表面之銀或氧化銀直接接合，且晶片剪切強度為13MPa~55MPa。晶片剪切強度係依賴於接合時之加熱溫度與加熱時間，溫度越高、時間越長，則強度越提高，但若考慮到製造成本及半導體裝置中所使用之塑膠構件之氧化劣化，則溫度越低、時間越短越有利。因此，可藉由將加熱溫度設為150℃~900℃、較好的是150℃~400℃、更好的是150℃~320℃，且任意設定加熱時間來調整晶片剪切強度。於實際使用上，因需要耐受打線接合時之超音波衝擊或半導體裝置之熱衝擊試驗，因而晶片剪切強度最低必需為13MPa，上限較好的是320℃加熱正式接合時之飽和之晶片剪切強度即55MPa。又，為了確保半導體裝置之可靠性且使半導體裝置之初始特性之下降減少，晶片剪切強度更好的是13MPa~35MPa。
半導體元件亦可使用半導體發光元件。金屬中銀之可見光之反射率最優異，對半導體元件表面實施銀塗佈亦係使半導體元件包含高效率之反射鏡，為最適合半導體發光元件之形態。又，藉由對基體表面實施銀塗佈，可使半導體裝置整體形成為反射鏡結構，可更高效率地出射光。半導體發光元件所使用之透光性無機基板之光吸收極低，因此可用於製作具有較高之發光效率之半導體發光元件。半導體發光元件係於透光性無機基板之上表面形成有作為半導體層之發光層，以使該發光層為上表面之方式進行配置，於相反側之成為背面之透光性無機基板上施予銀或氧化銀。藉此，可將自發光層放射之光高效率地反射，從而可獲得光輸出較大之半導體裝置。
半導體元件亦可使用如下者：於透光性無機基板上形成有半導體層，於透光性無機基板之與形成有半導體層之側相反之側施有第1銀，且設置有與第1銀接合之緩衝構件，於緩衝構件之表面施有銀或氧化銀。藉由於最表面之銀或氧化銀與透光性無機基板之間形成第1銀，可提高光反射率，從而提高來自半導體裝置之光輸出。於該第1銀與最表面之銀或氧化銀之間設置1層或2層以上之緩衝構件。根據基體之材質及透光性無機基板之材質，可選擇各種緩衝構件，可使用各種無機材料、各種有機材料。藉由使用緩衝構件，可使透光性無機基板與基體之間之應力減少或緩和，藉此可提高接合可靠性及防止透光性無機基板之龜裂。
<半導體裝置> (第1實施形態之半導體裝置)
使用圖式說明第1實施形態之半導體裝置之一例。圖1係表示第1實施形態之半導體發光元件之安裝狀態之概略剖面圖。作為半導體元件，係以使用發光二極體之半導體發光元件為基礎進行說明，但對於半導體發光元件以外之電晶體、IC、LSI等亦可應用本發明。
半導體裝置係將施於基體500表面之銀或氧化銀520、與施於半導體發光元件100表面之銀或氧化銀140直接接合而成。
半導體發光元件100包含：透光性無機基板110、放射光之半導體層120、設置於半導體層120上之電極130、施於形成有半導體層120之側之相反側的第1銀150、與第1銀接合之緩衝構件160、以及施於緩衝構件表面之銀或氧化銀140。半導體層120係於透光性無機基板110上積層有n型半導體層121，於n型半導體層121上積層有p型半導體層122。電極130係於n型半導體層121上設置有n型電極131，於p型半導體層122上設置有p型電極132。半導體發光元件100係採用於同一面側包含n型電極131與p型電極132之覆晶結構。施於半導體發光元件100表面之銀或氧化銀140不僅可為1層，亦可為2層以上。又，施於半導體發光元件100表面之銀或氧化銀140之膜厚較好的是0.1μm~50μm左右，並無特別限定。第1銀150較好的是為了使半導體層120之光效率良好地反射而設置。第1銀150只要為可使光反射85%以上、較好的是90%以上之厚度，例如為0.05μm以上即可，可進行任意調整。
緩衝構件160可使由於透光性無機基板110與基體500之機械物性之不同而產生的接合時應力減少或緩和。緩衝構件160可使用各種無機材料、有機材料，亦可將該等材料形成為多層。若緩衝構件160使用有機高分子材料，則可期待接合時應力大幅緩和之現象。就擔心緩衝構件160之露出之端面部發生光劣化而言，更好的是無機材料。
可將銀或氧化銀140配置於緩衝構件160下。藉此，可與施於基體500表面之銀或氧化銀520接合。藉由對銀或氧化銀140使用氧化銀，可於惰性氣體環境下進行接合。又，藉由使用氧化銀，可防止硫化，而對接合前之半導體發光元件賦予保管穩定性。對於該氧化銀之施予方法，可首先將銀施於緩衝構件160上，然後以氧電漿、UV(ultraviolet，紫外線)照射等方法進行氧化處理，藉此形成為氧化銀。
其中，亦可將銀或氧化銀140直接施於透光性無機基板110上。又，銀或氧化銀140並非必需為一層，亦可形成為兩層以上之多層。藉由改變銀或氧化銀140之膜厚或改變材質，可提高與透光性無機基板110之接合性。
基體500係於基座部510之表面施有銀或氧化銀520。基座部510可為導電性，亦可為絕緣性。作為用作基座部510之導電性構件，可列舉銅或鐵等之引線框架。於基座部510使用銀之情形時，無需施予銀或氧化銀520，基座部510即為基體500。
另一方面，作為用作基座部510之絕緣性構件，可列舉環氧玻璃基板、聚鄰苯二甲醯胺或液晶聚合物等樹脂構件以及陶瓷構件等。於基座部510使用該等絕緣性構件之情形時，係於環氧玻璃基板上形成特定之電路配線，於該電路配線上施予銀或氧化銀520。
藉由對設置於基座部510上之銀或氧化銀520選擇氧化銀，可於惰性氣體環境下進行接合。該氧化銀之施予方法係首先將銀施於基座部510上，然後以氧電漿、UV照射等方法進行氧化處理，藉此可形成為氧化銀。氧化處理可僅對於安裝半導體發光元件100之部位進行。對半導體發光元件100之氧化銀之施予方法係首先將銀施於緩衝構件160上，然後以氧電漿、UV照射等方法進行氧化處理，藉此可形成為氧化銀。
基體500之形狀可採用平板形狀、杯形狀等各種形態。就半導體發光元件100之安裝容易度而言，較好的是採用平板形狀作為基體500之形狀。又，為了提高來自半導體發光元件100之光出射效率，基體500亦可採用杯形狀。於使基體500為杯形狀之情形時，亦可使導電性配線之一部分作為端子而露出至基體500之外部。可於基體500上安裝具有相同功能之半導體發光元件，或亦可安裝具有不同功能之半導體元件。又，亦可於基體500上安裝電阻元件、電容器等電子元件。
設置於半導體發光元件100上之電極130係以金屬線等施有配線，以取得特定之電性連接。又，可利用包含吸收來自半導體發光元件100之光且轉換成不同波長之螢光體或填料、光擴散構件等之密封構件覆蓋半導體發光元件100，而製成半導體裝置。
晶片剪切強度宜為13MPa~55MPa。如上所述，可將半導體元件與基體牢固地接合。
(半導體裝置之製造方法)
於基體500上安裝半導體發光元件100時，係以使施於半導體發光元件100表面之銀或氧化銀140接觸於施於基體500表面之銀或氧化銀520上之方式進行配置。在施於基體500表面之銀或氧化銀520、與施於半導體發光元件100表面之銀或氧化銀140之間不存在焊錫或樹脂等。基體500中，於基座510上施有特定之電路配線，於該電路配線之最表面施有銀或氧化銀520。為了對半導體發光元件100進行定位，亦可形成與半導體發光元件100之外形為相同形狀之電路配線，或形成較半導體發光元件100之外形稍小且形狀大致相同之電路配線，或形成大致四角之頂點延伸至半導體發光元件100之四角為止之電路配線等各種形狀。
對半導體發光元件100或基體500施加壓力或施加超音波振動，將半導體發光元件100與基體500暫時接合。可於將半導體發光元件100載置於基體500上時，施加特定之壓力或超音波振動，亦可於將半導體發光元件100載置於基體500上之後，利用其他機械施加特定之壓力或超音波振動。將半導體發光元件100與基體500暫時接合時所施加之壓力較好的是5MPa~50MPa，更好的是10MPa~20MPa，只要為半導體發光元件100不會受到破壞之程度之壓力即可容許。暫時接合時，亦可對半導體發光元件100及基體500預先施加150℃~400℃之溫度。暫時接合所需之時間以長時間為佳，但並無特別限定，只要為0.1秒~60秒左右即可。
對半導體發光元件100及基體500施加150℃~900℃之溫度，將半導體發光元件100與基體500正式接合。亦可同時進行暫時接合之步驟與正式接合之步驟。對半導體發光元件100及基體500施加之溫度較好的是可牢固地接合之150℃以上。又，只要為半導體發光元件100不會受到破壞之溫度，則並不特別介意溫度，只要為銀之熔點以下之溫度即900℃以下即可，較好的是400℃以下。又，特別好的是半導體發光元件100或封裝體可耐受之溫度即320℃以下。正式接合之步驟亦可於大氣中或氧環境中進行。於半導體發光元件100表面使用銀140、及於基體500表面使用銀520之情形時，係於大氣中或氧環境中進行正式接合之步驟。於半導體發光元件100表面使用銀140及於基體500表面使用氧化銀520之情形，以及於半導體發光元件100表面使用氧化銀140及於基體500表面使用銀或氧化銀520之情形時，均可於氮環境等惰性環境中進行，但亦可於大氣中或氧環境中進行。正式接合所需之時間亦以長時間為佳，但並無特別限定，只要為1秒~24小時左右即可。
再者，因銀之熔點為961℃，故而於該製造步驟中，係以銀之熔點以下即900℃以下之溫度進行焙燒，尤其是150℃~400℃之溫度為非常低之溫度。
將半導體發光元件100安裝於基體500上後進行線連接，並以密封構件被覆，藉此可製成半導體裝置。
(第2實施形態之半導體裝置)
使用圖式說明第2實施形態之半導體裝置之一例。圖2係表示第2實施形態之半導體發光元件之安裝狀態之概略剖面圖。除了半導體發光元件以外，採用與第1實施形態之半導體裝置大致相同之構成，因此有時亦省略一部分說明。
半導體裝置係將施於基體600表面之銀或氧化銀620、與施於半導體發光元件200表面之銀或氧化銀240接合而成。
半導體發光元件200包含：透光性無機基板210、放射光之半導體層220、設置於半導體層220上之p型電極232、施於形成有半導體層220之側之相反側之第1銀250、與第1銀250接合之緩衝構件260、以及施於緩衝構件260之表面之銀或氧化銀240。透光性無機基板210之底部兼作n型電極。半導體層220係於透光性無機基板210上積層有n型半導體層221，於n型半導體層221上積層有p型半導體層222。半導體發光元件200包含下表面側之n型電極(透光性無機基板210之底部)與p型電極232。
基體600係於導電性或絕緣性之基座部610上施有銀或氧化銀620。
如上所述，即便為具有於上下表面包含電極之結構的半導體發光元件200，亦可藉由於進行安裝之下表面之最表面形成銀或氧化銀240，而於特定之條件下與施於基體600上之銀或氧化銀620牢固地接合。
(第3實施形態之半導體裝置)
使用圖式說明第3實施形態之半導體裝置之一例。圖3係表示第3實施形態之半導體發光元件之安裝狀態之概略剖面圖。除了半導體發光元件以外，採用與第1實施形態之半導體裝置大致相同之構成，因此有時亦省略一部分說明。
半導體裝置係將施於基體700表面之銀或氧化銀720、與施於半導體發光元件300表面之銀或氧化銀340接合而成。
半導體發光元件300包含：透光性無機基板310、放射光之半導體層320、設置於半導體層320上之電極330、以及施於電極330上之銀或氧化銀340。半導體層320係於透光性無機基板310上積層有n型半導體層321，於n型半導體層321上積層有p型半導體層322。電極330係於n型半導體層321上設置有n型電極331，於p型半導體層322上設置有p型電極332。半導體發光元件300係採用於同一面側包含n型電極331與p型電極332之覆晶結構，進行面朝下安裝。n型電極331與p型電極332均於表面施有銀或氧化銀340。銀或氧化銀340較好的是覆蓋n型電極331與p型電極332之整個表面，但亦可僅對與基體700接觸之部分施予銀或氧化銀340。施於半導體發光元件300表面之銀或氧化銀340不僅可為1層，亦可為2層以上。又，施於半導體發光元件300表面之銀或氧化銀340之膜厚較好的是0.1μm~50μm左右，並無特別限定。因半導體發光元件300係進行面朝下安裝，故而較好的是使n型電極331與p型電極332之高度一致，以使透光性無機基板310與基體大致平行。
基體700中，於絕緣性之基座部710上施有特定之電路圖案，於該電路圖案上施有銀或氧化銀720。
如上所述，即便對具有於同一面側包含n型電極331與p型電極332之結構的半導體發光元件300進行面朝下安裝之情形時，亦可藉由於n型電極331及p型電極332上施予銀或氧化銀340，而於特定之條件下與施於基體700上之銀或氧化銀720牢固地接合。尤其是由於可不使用焊接凸塊而進行接合，因此即便n型電極331與p型電極332之間較窄，亦可不發生短路地接合。
第3實施形態之半導體裝置之製造方法亦與第1實施形態之半導體裝置之製造方法大致相同。但是於將半導體發光元件300與基體700接合後，無需線連接之步驟。
(半導體元件)
作為半導體元件，除了發光二極體或雷射二極體等半導體發光元件以外，亦可使用電晶體或IC、LSI、曾納二極體、電容器、光接收元件等。
半導體發光元件係於無機基板上積層有半導體層。作為無機基板，較好的是具有透光性者。透光性無機基板可使用藍寶石、GaP、GaN、ITO(indium tin oxide，氧化銦錫)、ZnO、無機玻璃、陶瓷等，半導體層可使用將GaAlN、ZnS、ZnSe、SiC、GaP、GaAlAs、AlN、InN、AlInGaP、InGaN、GaN、AlInGaN等半導體形成為發光層者。作為半導體之結構，可列舉：具有MIS(metal-insulator-semiconductor，金屬-絕緣體-半導體)接合、PIN接合或PN接合之同質結構、異質結構或雙異質構成者。可根據半導體層之材料或其混晶度，而自紫外光至紅外光中選擇各種發光波長。發光層亦可採用形成為產生量子效應之薄膜的單一量子井結構或多重量子井結構。
於考慮到室外等之使用之情形時，作為可形成高亮度之半導體發光元件之半導體層，較好的是使用氮化鎵系化合物半導體，又，當發光為紅色時，較好的是使用鎵-鋁-砷系之半導體層或鋁-銦-鎵-磷系之半導體層，亦可根據用途而利用各種半導體層。
於半導體層使用氮化鎵系化合物半導體之情形時，透光性無機基板可使用藍寶石、尖晶石、SiC、Si、ZnO或GaN等材料。為了量產性良好地形成結晶性優異之氮化鎵，較好的是使用藍寶石作為透光性無機基板。於以面朝下之方式使用半導體發光元件之情形時，要求透光性無機基板之透光性較高。
電極宜為不會遮蔽光之材質，但亦可使用遮蔽光之材質。於在同一面側包含n型電極與p型電極之半導體發光元件之情形時，較好的是以佔據半導體層之較大範圍之方式施有p型電極。
於在上下表面包含n型電極與p型電極之半導體發光元件之情形時，較好的是與基體接觸之側之電極以佔據較大範圍之方式而施予，特別好的是於大致整個下表面上施有電極。該與基體接觸之側之電極較好的是由銀或氧化銀所覆蓋。
透光性之p型電極可由膜厚為150μm以下之薄膜所形成。又，p型電極亦可使用除金屬以外之ITO、ZnO。此處，亦可代替透光性之p型電極，採用網狀電極等包含複數個光出射用開口部之電極形態。
電極之形狀除直線狀以外，亦可為曲線狀、鬚狀、梳狀、格子狀、枝狀、鉤狀、網狀等。由於遮光效果與p型電極之總面積成比例地增大，因此較好的是以遮光效果不超過發光增強效果之方式來設計延長導電部之線寬及長度。p型電極亦可使用Au、Au-Sn等金屬、或除金屬以外之ITO、ZnO。又，亦可代替透光性之p型電極，採用網狀電極等包含複數個光出射用開口部之電極形態。半導體發光元件之尺寸可任意決定。
關於半導體發光元件之緩衝構件，作為無機材料，較好的是含有選自除銀或氧化銀以外之金、銅、鋁、錫、鈷、鐵、銦、鎢等金屬及其合金，二氧化矽、氧化鋁、氧化鋯、氧化鈦等氧化物，氮化鋁、氮化鋯、氮化鈦等氮化物之群中的至少一種。作為有機材料，較好的是含有選自環氧樹脂、矽氧樹脂、改質矽氧樹脂、變性矽氧樹脂、聚醯亞胺樹脂等絕緣樹脂以及於該等絕緣樹脂中高含量地填充有金屬粉末之導電性樹脂之群中的至少一種。
於將氧化銀施於半導體元件之最表面之情形時，首先施予銀，然後利用氧電漿、UV照射等方法進行氧化處理，藉此可形成為氧化銀。藉由形成為氧化銀，可於惰性氣體環境下進行接合。可防止銀硫化。
(基體)
基體係於基座部上施有銀或氧化銀。基體可使用：含有氧化鋁、氮化鋁、氧化鋯、氮化鋯、氧化鈦、氮化鈦或其等之混合物之陶瓷基板，含有Cu、Fe、Ni、Cr、Al、Ag、Au、Ti或其等之合金之金屬基板，引線框架，環氧玻璃基板，BT(bismaleimide triazine，雙順丁烯二醯亞胺三)樹脂基板，玻璃基板，樹脂基板，紙等。作為引線框架，例如可列舉包含銅、鐵、鎳、鉻、鋁、銀、金、鈦或其等之合金之金屬框架，較好的是銅、鐵或其等之合金。作為引線框架，於需要散熱性之半導體裝置中，更好的是銅合金，於需要與半導體元件之接合可靠性之半導體裝置中，更好的是鐵合金。於相當於基體之基座部之部位使用銀或氧化銀之情形時，無需進而施予銀或氧化銀。
配線基板或引線框架之表面亦可由銀、氧化銀、銀合金、銀合金之氧化物、Pt、Pt合金、Sn、Sn合金、金、金合金、Cu、Cu合金、Rh、Rh合金等所被覆，且其安裝半導體元件之部位之最表面係由銀或氧化銀所被覆。該等被覆可藉由電鍍、蒸鍍、濺鍍、印刷、塗佈等而進行。
作為基體，亦可利用使用樹脂之封裝體。作為封裝體，除將引線一體成形者以外，亦可為使封裝體成形後藉由電鍍等而設置電路配線者。封裝體可採用杯形狀或平板形狀等各種形態。作為構成封裝體之樹脂，可較佳地使用耐光性、耐熱性優異之電絕緣性者，例如可使用：聚鄰苯二甲醯胺等熱塑性樹脂、或環氧樹脂等熱硬化性樹脂、環氧玻璃、陶瓷等。又，為了效率良好地反射來自半導體發光元件之光，可於該等樹脂中混合氧化鈦等白色顏料等。作為封裝體之成形方法，可使用：預先將引線設置於模具內而進行之嵌入成形、射出成形、擠出成形、轉注成形等。
(密封構件)
為了保護安裝於基體上之半導體元件不受外力、灰塵等之影響，可使用密封構件。密封構件亦可使來自半導體發光元件之光效率良好地透射至外部。用於密封構件之樹脂例如可列舉：環氧系、酚系、丙烯酸系、聚醯亞胺系、聚矽氧系、胺基甲酸酯系、熱塑性系等。其中，聚矽氧系可製作耐熱‧耐光性優異且長壽命之半導體裝置，因而較好。作為氣密蓋或非氣密蓋，可列舉：無機玻璃、聚丙烯酸系樹脂、聚碳酸酯樹脂、聚烯烴樹脂、聚降烯樹脂等。其中，無機玻璃可製作耐熱‧耐光性優異且長壽命之半導體裝置，因而較好。
(其他)
密封構件亦可含有螢光物質、填料以及光擴散構件等。作為螢光物質，只要為吸收來自半導體發光元件之光，並發出與該光波長不同之螢光者即可，較好的是選自下述者中之至少一種以上：主要由Eu、Ce等鑭系元素活化之氮化物系螢光體或氮氧化物系螢光體；主要利用Eu等鑭系、Mn等過渡金屬系之元素而活化之鹼土鹵素磷灰石螢光體、鹼土金屬鹵硼酸鹽螢光體、鹼土金屬鋁酸鹽螢光體、鹼土金屬矽酸鹽螢光體、鹼土金屬硫化物螢光體、鹼土金屬硫代鎵酸鹽螢光體、鹼土金屬氮化矽螢光體、鍺酸鹽螢光體；主要由Ce等鑭系元素活化之稀土金屬鋁酸鹽螢光體、稀土金屬矽酸鹽螢光體；或者主要由Eu等鑭系元素活化之有機及無機錯合物等。更好的是使用(Y,Gd)3 (Al,Ga)5 O12 ：Ce、(Ca,Sr,Ba)2 SiO4 ：Eu、(Ca,Sr)2 Si5 N8 ：Eu、CaAlSiN3 ：Eu等。
作為填料，可使用：氧化鋁、二氧化矽、氧化錫、氧化鋅、氧化鈦、氧化鎂、氮化矽、氮化硼、氮化鋁、鈦酸鉀、雲母、矽酸鈣、硫酸鎂、硫酸鋇、硼酸鋁、玻璃碎片以及纖維。又，為了緩和應力，可使用矽氧橡膠粒子、矽氧彈性體粒子。光線透射率受填料粒徑之影響較大，因而填料之平均粒徑較好的是5μm以上，亦可使用奈米粒子。藉此，可大幅提高密封構件之透光性及光分散性。
作為光擴散構件，可使用：氧化鋁、二氧化矽、氧化錫、氧化鋅、氧化鈦、氧化鎂、氮化矽、氮化硼、氮化鋁、鈦酸鉀、雲母、矽酸鈣、硫酸鎂、硫酸鋇、硼酸鋁、玻璃碎片以及纖維。又，可使用：環氧樹脂、矽氧樹脂、苯胍樹脂、三聚氰胺樹脂之熱硬化性樹脂之粒子。光擴散性能受填料粒徑之影響較大，較好的是0.1μm~5μm之範圍。藉此，以少量之光擴散構件即可實現光擴散。
又，螢光物質及填料、光擴散構件亦可藉由印刷、灌注、電沈積、戳印而塗佈於半導體元件上。可於其上表面被覆密封構件。藉此，於密封構件具有透鏡形狀之情形時，光學設計變得容易，可獲得高品質之半導體裝置。
[實施例]
以下，使用實施例，對本發明之半導體裝置及其製造方法進行說明。實施例1~19之半導體裝置與第1實施形態之半導體裝置重複，因此亦存在省略說明之部分。
<實施例1>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於大氣環境中以約150℃將暫時接合有半導體發光元件100之基體500加熱約5小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例2>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於大氣環境中以約320℃將暫時接合有半導體發光元件100之基體500加熱約15分鐘，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例3>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之氧化鋁陶瓷基板作為基座部510，且使用於氧化鋁陶瓷基板上所形成之基底金屬之表面實施鍍銀之銀520。氧化鋁陶瓷基板係如下者：以成為杯形狀之方式積層氧化鋁陶瓷，設置基底金屬後，對氧化鋁陶瓷進行焙燒，於經焙燒之氧化鋁陶瓷之基底金屬上實施鍍銀。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於大氣環境中以約150℃將暫時接合有半導體發光元件100之基體500加熱約10小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例4>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之氧化鋁陶瓷基板作為基座部510，且使用於氧化鋁陶瓷基板上所形成之基底金屬之表面實施鍍銀之銀520。氧化鋁陶瓷基板係如下者：以成為杯形狀之方式積層氧化鋁陶瓷，設置基底金屬後，對氧化鋁陶瓷進行焙燒，於經焙燒之氧化鋁陶瓷之基底金屬上實施鍍銀。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於大氣環境中以約320℃將暫時接合有半導體發光元件100之基體500加熱約1小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例5>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化而成之氧化銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之氧化銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於氮氣流中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於氮氣流中以約150℃將暫時接合有半導體發光元件100之基體500加熱約7小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例6>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化而成之氧化銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之氧化銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於氮氣流中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於氮氣流中以約320℃將暫時接合有半導體發光元件100之基體500加熱約1時間，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例7>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化而成之氧化銀140。作為基體500，形成杯形狀之氧化鋁陶瓷基板作為基座部510，且使用於氧化鋁陶瓷基板上所形成之基底金屬之表面實施鍍銀之銀520。氧化鋁陶瓷基板係如下者：以成為杯形狀之方式積層氧化鋁陶瓷，設置基底金屬後，對氧化鋁陶瓷進行焙燒，於經焙燒之氧化鋁陶瓷之基底金屬上實施鍍銀。
以半導體發光元件100之氧化銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於氮氣流中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於氮氣流中以約150℃將暫時接合有半導體發光元件100之基體500加熱約15小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例8>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化而成之氧化銀140。作為基體500，形成杯形狀之氧化鋁陶瓷基板作為基座部510，且使用於氧化鋁陶瓷基板上所形成之基底金屬之表面實施鍍銀之銀520。氧化鋁陶瓷基板係如下者：以成為杯形狀之方式積層氧化鋁陶瓷，設置基底金屬後，對氧化鋁陶瓷進行焙燒，於經焙燒之氧化鋁陶瓷之基底金屬上實施鍍銀。
以半導體發光元件100之氧化銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於氮氣流中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於氮氣流中以約320℃將暫時接合有半導體發光元件100之基體500加熱約3小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例9>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加60kHz之超音波，保持約1秒，進行暫時接合。進而，於大氣環境中以約150℃將暫時接合有半導體發光元件100之基體500加熱約3小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例10>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加60kHz之超音波，保持約1秒，進行暫時接合。進而，於大氣環境中以約320℃將暫時接合有半導體發光元件100之基體500加熱約15分鐘，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例11>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之氧化鋁陶瓷基板作為基座部510，且使用於氧化鋁陶瓷基板上所形成之基底金屬之表面實施鍍銀之銀520。氧化鋁陶瓷基板係如下者：以成為杯形狀之方式積層氧化鋁陶瓷，設置基底金屬後，對氧化鋁陶瓷進行焙燒，於經焙燒之氧化鋁陶瓷之基底金屬上實施鍍銀。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加60kHz之超音波，保持約1秒，進行暫時接合。進而，於大氣環境中以約150℃將暫時接合有半導體發光元件100之基體500加熱約5小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例12>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之氧化鋁陶瓷基板作為基座部510，且使用於氧化鋁陶瓷基板上所形成之基底金屬之表面實施鍍銀之銀520。氧化鋁陶瓷基板係如下者：以成為杯形狀之方式積層氧化鋁陶瓷，設置基底金屬後，對氧化鋁陶瓷進行焙燒，於經焙燒之氧化鋁陶瓷之基底金屬上實施鍍銀。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加60kHz之超音波，保持約1秒，進行暫時接合。進而，於大氣環境中以約320℃將暫時接合有半導體發光元件100之基體500加熱約30分鐘，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例13>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化而成之氧化銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之氧化銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於氮氣流中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加60kHz之超音波，保持約1秒，進行暫時接合。進而，於氮氣流中以約150℃將暫時接合有半導體發光元件100之基體500加熱約4小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例14>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化而成之氧化銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之氧化銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於氮氣流中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加60kHz之超音波，保持約1秒，進行暫時接合。進而，於氮氣流中以約320℃將暫時接合有半導體發光元件100之基體500加熱約30分鐘，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例15>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化而成之氧化銀140。作為基體500，形成杯形狀之氧化鋁陶瓷基板作為基座部510，且使用於氧化鋁陶瓷基板上所形成之基底金屬之表面實施鍍銀之銀520。氧化鋁陶瓷基板係如下者：以成為杯形狀之方式積層氧化鋁陶瓷，設置基底金屬後，對氧化鋁陶瓷進行焙燒，於經焙燒之氧化鋁陶瓷之基底金屬上實施鍍銀。
以半導體發光元件100之氧化銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於氮氣流中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加60kHz之超音波，保持約1秒，進行暫時接合。進而，於氮氣流中以約150℃將暫時接合有半導體發光元件100之基體500加熱約10小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<實施例16>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化而成之氧化銀140。作為基體500，形成杯形狀之氧化鋁陶瓷基板作為基座部510，且使用於氧化鋁陶瓷基板上所形成之基底金屬之表面實施鍍銀之銀520。氧化鋁陶瓷基板係如下者：以成為杯形狀之方式積層氧化鋁陶瓷，設置基底金屬後，對氧化鋁陶瓷進行焙燒，於經焙燒之氧化鋁陶瓷之基底金屬上實施鍍銀。
以半導體發光元件100之氧化銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於氮氣流中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加60kHz之超音波，保持約1秒，進行暫時接合。進而，於氮氣流中以約320℃將暫時接合有半導體發光元件100之基體500加熱約2小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<參考例1>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於大氣環境中以約140℃將暫時接合有半導體發光元件100之基體500加熱約24小時，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<測定結果>
對實施例1至16及參考例1之半導體裝置測定晶片剪切強度。晶片剪切強度係於室溫下，對自基體500上剝離半導體發光元件100之方向施加剪切力，測定剝離時之強度。又，對使用封裝體之實施例1、2、5、6、9、10、13、14之半導體裝置測定470nm光線反射率。表1中表示晶片剪切強度(gf)與光線反射率(%)之測定結果。
根據該測定結果，可知正式接合條件越為高溫，則能夠以越短之時間獲得特定之晶片剪切強度。可知藉由於150℃以上之溫度條件下任意選擇加熱時間，可獲得實用之晶片剪切強度。就封裝體或半導體發光元件之耐熱性之觀點而言，係施加320℃之溫度，但於使用耐熱性更良好之封裝體或半導體元件之情形時，亦可施加更高之溫度。可知藉由於半導體發光元件側施予氧化銀，可於氮氣流下進行接合。雖未表示為實施例，但於基體側施有氧化銀者亦同樣可於氮氣流下進行接合。
光線反射率於任一實施例中均表現出85%以上之非常高之反射率。又，可使因用於封裝體之環氧樹脂變色所致之光線反射率下降減少。藉由使用陶瓷構件作為基體，可提供不會產生熱劣化之半導體裝置。
另一方面，如參考例1般於加熱溫度為140℃下雖實現接合，但其晶片剪切強度並不充分。
再者，由於基體所使用之陶瓷構件與環氧樹脂之導熱性存在差異等原因，故而有時即便施加相同之溫度，至達到特定之晶片剪切強度為止之時間仍會產生差異。
<實施例17至19>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於大氣環境中、以約320℃將暫時接合有半導體發光元件100之基體500於約1小時(實施例17)、約2小時(實施例18)、約3小時(實施例19)之三條件下分別加熱，進行正式接合。藉此，可將半導體發光元件100直接接合於基體500上。
<測定結果>
對實施例17至19之半導體裝置測定晶片剪切強度。晶片剪切強度係於室溫下，對自基體500上剝離半導體發光元件100之方向施加剪切力，測定剝離時之強度。表2中表示晶片剪切強度(gf)之測定結果。
根據該結果，可知加熱時間越長，可獲得越高之晶片剪切強度。又，可確認於320℃之正式接合條件下可獲得約2000gf(55MPa)之晶片剪切強度。
<初始特性> (比較例1)
採用與實施例1相同之構件構成，且比較例1中係使用絕緣性無色透明之環氧樹脂作為黏晶構件而進行接合。硬化條件為170℃、1小時。比較例1之晶片剪切強度為約900gf。
(比較例2)
採用與實施例1相同之構件構成，且比較例2中係使用碎片狀銀填料80wt%-環氧樹脂20wt%之銀漿進行接合。硬化條件為150℃、1小時。比較例2之晶片剪切強度為約1500gf。
<測定結果>
對實施例1、比較例1、比較例2，分別以金屬線對半導體發光元件之電極與基體之電極進行配線，以矽氧樹脂進行密封，而獲得半導體裝置。於該狀態下測定各半導體裝置之發光輸出。發光輸出係以將實施例1設為100%時之相對值來表示。表3中表示測定結果。
根據該測定結果，實施例1可獲得可進行輸出最高之發光之半導體裝置。比較例1中可推測，由於絕緣性之環氧樹脂形成填角(fillet)，進而於硬化時環氧樹脂發生若干黃變，因此確認到發光輸出下降。同樣地可推測，比較例2之添加有碎片狀銀填料之環氧樹脂亦形成填角，進而於硬化時環氧樹脂發生若干黃變，且同時由碎片狀銀填料引起光散射，因此發光輸出大幅下降。
<通電試驗>
對實施例1、比較例1、比較例2，分別於該狀態下在經過500小時後、經過1000小時後、以及經過2000小時後進行通電試驗(試驗條件為25℃、50mA)。表4中表示相對於初始輸出之輸出結果。
可確認實施例1中所獲得之半導體裝置於經過2000小時後亦可維持較高之發光輸出。另一方面，可確認比較例1及2中所獲得之半導體裝置於經過2000小時後輸出顯著下降。
又，確認於經過2000小時後，實施例1之半導體發光元件周邊之任意部位均未觀察到變色。相對於此，確認於經過2000小時後，半導體發光元件與基體之間之比較例1的絕緣性無色透明之環氧樹脂之接合及填角部變色為黑褐色。又，確認於經過2000小時後，半導體發光元件與基體之間之比較例2的碎片狀銀填料80wt%-環氧樹脂20wt%之銀漿之接合及填角部變色為黑褐色。
<實施例20>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，並以約250℃加熱約1小時，而進行接合。藉此，可將半導體發光元件100直接接合於基體500上。藉由以一個步驟進行暫時接合與正式接合，可使步驟簡略化。
<實施例21>
作為半導體發光元件100，利用：使用600μm×600μm×厚度100μm之藍寶石之透光性無機基板110、積層於透光性無機基板110之上表面之InGaN之半導體層120、以及於透光性無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之氧化鋁陶瓷基板作為基座部510，且使用於氧化鋁陶瓷基板上所形成之基底金屬之表面實施鍍銀之銀520。氧化鋁陶瓷基板係如下者：以成為杯形狀之方式積層氧化鋁陶瓷，設置基底金屬後，對氧化鋁陶瓷進行焙燒，於經焙燒之氧化鋁陶瓷之基底金屬上實施鍍銀。
以半導體發光元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體發光元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於大氣環境中以約380℃將暫時接合有半導體發光元件100之基體500加熱約5分鐘，進行正式接合。藉此，能夠以短時間將半導體發光元件100直接接合於基體500上。
<實施例22>
使用曾納二極體來代替半導體發光元件作為半導體元件100。作為半導體元件100，利用：使用300μm×300μm×厚度200μm之Si之基板110、形成於基板110之上表面之半導體層120、以及於基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於大氣環境中以約150℃將暫時接合有半導體元件100之基體500加熱約5小時，進行正式接合。藉此，能夠以短時間將半導體元件100直接接合於基體500上。藉由於一個封裝體中使用發光二極體與曾納二極體，可於將發光二極體與曾納二極體分別暫時接合後，同時進行正式接合，因此可實現製造步驟之簡略化。
<實施例23>
使用IC晶片來代替半導體發光元件作為半導體元件100。作為半導體元件100，利用：使用300μm×300μm×厚度200μm之Si之無機基板110、形成於上表面之半導體層120、以及於無機基板110之下表面金屬化之銀140。作為基體500，形成杯形狀之封裝體作為基座部510，且使用於自封裝體露出之引線框架之表面實施鍍銀之銀520。封裝體係於分散有白色顏料之環氧樹脂中配置以銅為母材之引線框架進行嵌入成形而成者。
以半導體元件100之銀140直接接觸於基體500之銀520上之方式載置半導體發光元件100。載置係於大氣中將引線框架預熱至約250℃，自半導體元件100之上表面朝向基體500側施加約15MPa之壓力，保持約10秒，進行暫時接合。進而，於大氣環境中以約380℃將暫時接合有半導體發光元件100之基體500加熱約5分鐘，進行正式接合。藉此，能夠以短時間將半導體元件100直接接合於基體500上。
 [產業上之可利用性]
本發明之半導體裝置之製造方法例如可應用於：零件電極之連接，晶粒黏著，微細凸塊、平板、太陽能配線等之製造用途及晶圓連接等用途，以及組合製造該等之電子零件製造。又，本發明之半導體裝置之製造方法例如亦可應用於製造使用LED或LD等半導體發光元件之半導體裝置之時。
100、200、300．．．半導體發光元件
110、210、310．．．透光性無機基板
120、220、320．．．半導體層
121、221、321．．．n型半導體層
122、222、322．．．p型半導體層
130、330．．．電極
131、331．．．n型電極
132、232、332．．．p型電極
140、240、340．．．銀或氧化銀
150、250．．．第1銀
160、260．．．緩衝構件
500、600、700．．．基體
510、610、710．．．基座部
520、620、720．．．銀或氧化銀
圖1係表示第1實施形態之半導體發光元件之安裝狀態之概略剖面圖。
圖2係表示第2實施形態之半導體發光元件之安裝狀態之概略剖面圖。
圖3係表示第3實施形態之半導體發光元件之安裝狀態之概略剖面圖。
100．．．半導體發光元件
110．．．透光性無機基板
120．．．半導體層
121．．．n型半導體層
122．．．p型半導體層
130．．．電極
131．．．n型電極
132．．．p型電極
140、520．．．銀或氧化銀
150．．．第1銀
160．．．緩衝構件
500．．．基體
510．．．基座部

Claims (10)

  1. 一種半導體裝置之製造方法，其特徵在於：該半導體裝置係將施於基體表面之銀或氧化銀、與施於半導體元件表面之銀或氧化銀接合而成者，該方法包括以下步驟：將氧化銀施於基體表面及半導體元件表面之至少一者上；以施於半導體元件表面之銀或氧化銀接觸於施於基體表面之銀或氧化銀上之方式配置半導體元件；對半導體元件或基體施加壓力或施加超音波振動，將半導體元件與基體暫時接合；以及對半導體元件及基體施加150℃~900℃之溫度，將半導體元件與基體正式接合；施於基體表面及半導體元件表面之銀塗層係藉由濺鍍、蒸鍍、電鍍中之任一者所形成；施於基體表面及半導體元件表面之氧化銀係藉由將銀塗層氧化處理所形成。
  2. 一種半導體裝置之製造方法，其特徵在於：該半導體裝置係將施於基體表面之銀與施於半導體元件表面之銀接合而成者，該方法包括以下步驟：以施於半導體元件表面之銀接觸於施於基體表面之銀上之方式配置半導體元件；對半導體元件或基體施加壓力或施加超音波振動，將半導體元件與基體暫時接合；以及對半導體元件及基體施加150℃~900℃之溫度，將半 導體元件與基體正式接合；施於基體表面及半導體元件表面之銀係藉由濺鍍、蒸鍍、電鍍中之任一者所形成。
  3. 如請求項1或2之半導體裝置之製造方法，其中暫時接合之步驟與正式接合之步驟係同時進行。
  4. 如請求項1或2之半導體裝置之製造方法，其中正式接合之步驟係於大氣中或氧環境中進行。
  5. 如請求項1之半導體裝置之製造方法，其中正式接合之步驟係於氮環境中進行。
  6. 如請求項1或2之半導體裝置之製造方法，其中於暫時接合之步驟之前，進而包括如下步驟：以150~900℃預先加熱半導體元件及基體。
  7. 如請求項1或2之半導體裝置之製造方法，其中於暫時接合之步驟中，所施加之壓力為5MPa~50MPa。
  8. 一種半導體裝置，其特徵在於：其係藉由如請求項1或2之半導體裝置之製造方法，將施於基體表面之銀或氧化銀、與施於半導體元件表面之銀或氧化銀直接接合，且晶片剪切強度為13MPa~55MPa者。
  9. 如請求項8之半導體裝置，其中半導體元件為半導體發光元件。
  10. 如請求項8之半導體裝置，其中半導體元件係於透光性無機基板上形成有半導體層，且施於半導體元件表面之銀或氧化銀係施於透光性無機基板之與形成有半導體層之側相反之側。
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