JP2008177378A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2008177378A JP2008177378A JP2007009692A JP2007009692A JP2008177378A JP 2008177378 A JP2008177378 A JP 2008177378A JP 2007009692 A JP2007009692 A JP 2007009692A JP 2007009692 A JP2007009692 A JP 2007009692A JP 2008177378 A JP2008177378 A JP 2008177378A
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Abstract
【解決手段】半導体素子101とCuまたはNi電極がAg,Cu又はAuで構成された接合層105を介して接続され、前記接合層105と前記CuまたはNi電極とが相互拡散接合している構造を備えた半導体装置101を特徴とする。平均粒径が1nm〜50μmの金属酸化物粒子と、有機物からなる還元剤とを含む接合材料により、還元雰囲気中において接合を行うことでNi又はCu電極に対して優れた接合強度が得ることができる。
【選択図】図3
Description
nm金属粒子を接合材として用いることが検討されている(例えば、特許文献1参照)。特許文献1には、平均粒径100nm以下の金属粒子からなる核の周囲に有機物よりなる皮膜を施した接合材料を用いて、加熱により有機物を分解させて金属粒子同士を焼結させることで接合を行うことが記載されている。本接合方法では、接合後の金属粒子はバルク金属へと変化すると同時に接合界面では金属結合により接合されているため、非常に高い耐熱性と信頼性及び高放熱性を有する。また、電子部品等の接続において、はんだの鉛フリー対応が迫られているが、高温はんだに関してはその代替となる材料が出ていない。実装においては階層はんだを用いることが必要不可欠なため、この高温はんだに代わる材料の出現が望まれている。従って、本接合技術はこの高温はんだに代わる材料としても期待されている。
Ag,Pd電極に対しては良好な接合強度が得られているが、Ni,Cu電極に対しては十分な接合強度が得られないことが判った。
28000(以上、アビシア社製)などの高分子系分散剤を用いることができる。このような分散剤の使用量は金属粒子前駆体に接合用材料中において0.01wt% 以上でかつ45wt%を超えない範囲とする。
101のコレクタ電極106′と配線層102が酸化銀粒子使用接合材(接合後は純銀層化)で接合されている。配線層102はCu配線にNiめっきを施したものである。酸化銀粒子使用接合材(接合後は純銀層化)は、半導体素子のエミッタ電極106と接続用端子201の接合部、及び接続用端子201と配線層104の接合部にも、同様の構成で適用されている。コレクタ電極106′表面とエミッタ電極106表面はNiが施されている。また、接続用端子201はCuまたはCu合金で構成されている。それぞれの酸化銀粒子使用接合部は個別に行ってもよいし、同時に行ってもよい。酸化銀粒子使用接合材を接合すべき部材の間に配置し、その状態で250℃の熱を約1分間加え、同時に1.0
MPaの圧力を100%水素中で加えることにより、接合を行うことができる。接合に当たり、超音波振動を加えることもできる。
102,104 配線層
103 セラミックス絶縁基板
105 接合層
106 エミッタ電極
110 支持部材
201 接続用端子
Claims (14)
- 半導体素子とCuまたはNi電極がAg,Cu又はAuで構成された接合層を介して接続された半導体装置であって、前記接合層と前記CuまたはNi電極とが相互拡散接合している構造を特徴とする半導体装置。
- 請求項1において、前記接合層と前記CuまたはNi電極との境界に酸化物層が存在しないことを特徴とする半導体装置。
- 請求項1において、前記接合層の熱伝導率が50乃至430W/mKであることを特徴とする半導体装置。
- 請求項1において、前記接合層は金属粒子が相互に金属結合した焼成層であることを特徴とする半導体装置。
- 請求項1において、前記接合層は、平均粒径が1nm〜50μmの金属酸化物粒子と、有機物からなる還元剤とを含む接合材料を還元雰囲気下で加熱することで得られる焼成層であることを特徴とする半導体装置。
- セラミックス絶縁基板の両面に配線層を有する配線基板と、前記配線基板の一方の面に接続された半導体素子と、前記配線基板の他方の面に接続された支持部材とを有する半導体装置であって、
前記半導体素子と接続される前記配線層の接合面がNi又はCuで構成され、Ag,
Cu又はAuからなる金属粒子の焼成層により前記半導体素子と配線層が接合され、前記焼成層と前記配線層とが相互拡散接合していることを特徴とする半導体装置。 - 請求項6に記載の半導体装置において、前記支持部材、又は、前記支持部材と接続される前記配線層の少なくとも一方の接合面がNi又はCuで構成され、Ag,Cu又はAuからなる金属粒子の焼成層により前記支持部材と配線層が接合されていることを特徴とする半導体装置。
- 請求項6に記載の半導体装置を内蔵していることを特徴とする電力変換装置。
- 請求項8に記載の電力変換装置がエンジンルームに搭載されることを特徴とするハイブリット自動車。
- 半導体素子の電極と前記半導体素子の電気信号を外部に取り出すための配線とを接合した半導体装置の製造方法であって、
前記半導体素子の電極、または、前記配線の少なくと一方がCuまたはNiで構成され、
平均粒径が1nm〜50μmの金属酸化物粒子と、有機物からなる還元剤とを含む接合材料により、還元雰囲気下で加熱により前記電極と配線とを接合する工程を有することを特徴とする半導体装置の製造方法。 - 前記電極と配線とを接合する工程において、0.01 乃至5MPaの加圧と、50乃至400℃に加熱を加えることを特徴とする請求項10に記載の半導体装置の製造方法。
- 請求項10において、前記金属酸化物が、金,銀、または、銅の酸化物であることを特徴とする半導体装置の製造方法。
- 請求項10において、前記還元剤がアルコール類,カルボン酸類,アミン類から選ばれた1種または2種以上の混合物であることを特徴とする半導体装置の製造方法。
- 請求項10において、前記加熱により前記金属粒子前駆体を還元させて平均粒径が100nm以下の金属粒子を生成させることを特徴とする接合方法。
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