TWI421897B - Field emission display - Google Patents
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- TWI421897B TWI421897B TW100100115A TW100100115A TWI421897B TW I421897 B TWI421897 B TW I421897B TW 100100115 A TW100100115 A TW 100100115A TW 100100115 A TW100100115 A TW 100100115A TW I421897 B TWI421897 B TW I421897B
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本發明涉及一種場發射電子器件及場發射顯示裝置，尤其涉及一種平面型場發射電子器件及場發射顯示裝置。 The invention relates to a field emission electronic device and a field emission display device, in particular to a planar field emission electronic device and a field emission display device.
場發射電子器件在低溫或者室溫下工作，與熱電子發射器件相比具有功耗低、回應速度快以及低放氣等優點。場發射電子器件在場發射顯示裝置中具有廣泛的應用。 Field emission electronics operate at low temperatures or at room temperature, and have the advantages of low power consumption, fast response, and low bleed compared to thermal electron-emitting devices. Field emission electronics have a wide range of applications in field emission display devices.
先前技術中的場發射顯示裝置包括一絕緣基底、複數個畫素單元、以及複數個行電極引線與複數個列電極引線。其中，所述複數個行電極引線與複數個列電極引線分別平行且等間隔設置於絕緣基底表面。所述複數個行電極引線與複數個列電極引線相互交叉設置，且每兩個相鄰的行電極引線與兩個相鄰的列電極引線形成一網格。所述複數個畫素單元按照預定規律排列，間隔設置於上述網格中，且每個網格中設置一個畫素單元。所述畫素單元包括一陰極電極，一設置於該陰極電極表面的電子發射體，一與該陰極電極間隔設置的陽極電極，以及一設置於該陽極電極表面的螢光粉層。當在該陰極電極與陽極電極之間施加一電壓，電子發射體發射電子，以轟擊螢光粉層發光。 The field emission display device of the prior art includes an insulating substrate, a plurality of pixel units, and a plurality of row electrode leads and a plurality of column electrode leads. Wherein, the plurality of row electrode leads and the plurality of column electrode leads are respectively disposed in parallel and equally spaced on the surface of the insulating substrate. The plurality of row electrode leads and the plurality of column electrode leads are disposed to intersect each other, and each two adjacent row electrode leads and two adjacent column electrode leads form a grid. The plurality of pixel units are arranged according to a predetermined rule, and are arranged at intervals in the grid, and one pixel unit is disposed in each grid. The pixel unit includes a cathode electrode, an electron emitter disposed on the surface of the cathode electrode, an anode electrode spaced apart from the cathode electrode, and a phosphor layer disposed on the surface of the anode electrode. When a voltage is applied between the cathode electrode and the anode electrode, the electron emitter emits electrons to illuminate the phosphor layer.
然而，上述場發射顯示裝置中，陽極電極通常為橫截面為矩形的平面導電體，且螢光粉層設置於陽極電極與絕緣基底表面平行的 頂面，故，螢光粉層的面積較小且不易被陰極發射體發射的電子轟擊到，從而使得場發射顯示裝置亮度較差。 However, in the field emission display device described above, the anode electrode is generally a planar conductor having a rectangular cross section, and the phosphor layer is disposed on the surface of the anode electrode parallel to the surface of the insulating substrate. The top surface, therefore, the area of the phosphor layer is small and is not easily bombarded by electrons emitted by the cathode emitter, thereby making the field emission display device less bright.
有鑒於此，提供一種具有較高亮度的場發射顯示裝置實為必要。 In view of this, it is necessary to provide a field emission display device having higher brightness.
一種場發射顯示裝置包括：一絕緣基底具有一表面；複數個行電極引線與複數個列電極引線分別平行且間隔設置於所述絕緣基底的表面，該複數個行電極引線與複數個列電極引線交叉設置，且每兩個相鄰的行電極引線與兩個相鄰的列電極引線形成一個網格；複數個畫素單元設置於絕緣基底的表面，每個畫素單元對應一個網格設置，且每個畫素單元包括一陰極電極、至少一與該陰極電極電連接的陰極發射體、一與該陰極電極間隔設置的陽極電極、以及一螢光粉層；其中，所述陽極電極具有一承載面與所述陰極電極相對設置且背向所述絕緣基底設置，所述螢光粉層至少設置於所述承載面。相較於先前技術，所述場發射顯示裝置的陽極電極具有一承載面與所述陰極電極相對設置且背向所述絕緣基底設置，所述螢光粉層至少設置於所述承載面，故，所述螢光粉層具有較大的面積且容易被陰極發射體發射的電子轟擊到，從而使得場發射顯示裝置具有較高的亮度。 A field emission display device includes: an insulating substrate having a surface; a plurality of row electrode leads and a plurality of column electrode leads respectively disposed parallel to and spaced apart from a surface of the insulating substrate, the plurality of row electrode leads and a plurality of column electrode leads Cross-arranged, and each two adjacent row electrode leads form a grid with two adjacent column electrode leads; a plurality of pixel units are disposed on the surface of the insulating substrate, and each pixel unit corresponds to a grid setting, And each pixel unit includes a cathode electrode, at least one cathode emitter electrically connected to the cathode electrode, an anode electrode spaced apart from the cathode electrode, and a phosphor layer; wherein the anode electrode has a The bearing surface is disposed opposite to the cathode electrode and disposed away from the insulating substrate, and the phosphor powder layer is disposed at least on the bearing surface. Compared with the prior art, the anode electrode of the field emission display device has a bearing surface disposed opposite to the cathode electrode and disposed away from the insulating substrate, and the phosphor powder layer is disposed at least on the bearing surface, so The phosphor layer has a large area and is easily bombarded by electrons emitted from the cathode emitter, thereby making the field emission display device have higher brightness.
200,300,400‧‧‧場發射顯示裝置 200,300,400‧‧‧ field emission display device
202,302,402‧‧‧絕緣基底 202,302,402‧‧‧Insulation base
204,304,404‧‧‧行電極引線 204, 304, 404‧‧‧ row electrode leads
206,306,406‧‧‧列電極引線 206, 306, 406‧‧‧ column electrode leads
208,308,408‧‧‧陰極發射體 208,308,408‧‧‧ cathode emitter
210,310,410‧‧‧第二電極 210,310,410‧‧‧second electrode
2102,3102,4122‧‧‧承載面 2102, 3102, 4122‧‧‧ bearing surface
212,312,412‧‧‧第一電極 212, 312, 412‧‧‧ first electrode
3121,4121‧‧‧第一子電極 3121, 4121‧‧‧ first subelectrode
3123,4123‧‧‧第二子電極 3123, 4123‧‧‧Second subelectrode
3125,4125‧‧‧第三子電極 3125, 4125‧‧‧ third subelectrode
214‧‧‧網格 214‧‧‧Grid
216‧‧‧絕緣層 216‧‧‧Insulation
218,318,418‧‧‧螢光粉層 218,318,418‧‧‧Fluorescent powder layer
220,320,420‧‧‧畫素單元 220,320,420‧‧‧ pixel unit
222,322,422‧‧‧電子發射端 222,322,422‧‧‧Electronic transmitter
224‧‧‧固定元件 224‧‧‧Fixed components
圖1為本發明第一實施例提供的場發射顯示裝置的俯視示意圖。 FIG. 1 is a schematic top plan view of a field emission display device according to a first embodiment of the present invention.
圖2為圖1所示的場發射顯示裝置沿線II-II的剖面示意圖。 2 is a cross-sectional view of the field emission display device shown in FIG. 1 taken along line II-II.
圖3為本發明第二實施例提供的場發射顯示裝置的俯視示意圖。 FIG. 3 is a schematic top plan view of a field emission display device according to a second embodiment of the present invention.
圖4為圖3所示的場發射顯示裝置沿線IV-IV的剖面示意圖。 4 is a cross-sectional view of the field emission display device shown in FIG. 3 taken along line IV-IV.
圖5為本發明第三實施例提供的場發射顯示裝置的俯視示意圖。 FIG. 5 is a schematic top plan view of a field emission display device according to a third embodiment of the present invention.
圖6為圖1所示的場發射顯示裝置沿線VI-VI的剖面示意圖。 Figure 6 is a cross-sectional view of the field emission display device of Figure 1 taken along line VI-VI.
以下將結合附圖對本發明的場發射顯示裝置作進一步的詳細說明。可以理解，所述場發射顯示裝置可以包括複數個畫素單元，本發明實施例附圖僅給出部分畫素單元為例進行說明。 The field emission display device of the present invention will be further described in detail below with reference to the accompanying drawings. It can be understood that the field emission display device may include a plurality of pixel units, and the embodiment of the present invention only gives a partial pixel unit as an example for description.
請參閱圖1、圖2，本發明第一實施例提供一種場發射顯示裝置200，其包括一絕緣基底202，複數個設置於該絕緣基底202表面的畫素單元220、以及複數個行電極引線204與複數個列電極引線206。 Referring to FIG. 1 and FIG. 2, a first embodiment of the present invention provides a field emission display device 200 including an insulating substrate 202, a plurality of pixel units 220 disposed on the surface of the insulating substrate 202, and a plurality of row electrode leads. 204 and a plurality of column electrode leads 206.
所述複數個行電極引線204與列電極引線206分別平行、間隔設置。優選地，所述複數個行電極引線204與列電極引線206分別平行、等間隔設置。所述複數個行電極引線204與複數個列電極引線206相互交叉設置，並在行電極引線204與列電極引線206交叉處設置有一介質絕緣層216。該介質絕緣層216將行電極引線204與列電極引線206電隔離，以防止短路。每兩個相鄰的行電極引線204與兩個相鄰的列電極引線206形成一網格214，且每個網格214定位一個畫素單元220。所述複數個畫素單元220對應網格214設置成一矩陣。可以理解，所述場發射顯示裝置200工作時需要封裝在一真空環境中。 The plurality of row electrode leads 204 and the column electrode leads 206 are respectively disposed in parallel and spaced apart. Preferably, the plurality of row electrode leads 204 and the column electrode leads 206 are respectively disposed in parallel and at equal intervals. The plurality of row electrode leads 204 and the plurality of column electrode leads 206 are disposed to cross each other, and a dielectric insulating layer 216 is disposed at a intersection of the row electrode leads 204 and the column electrode leads 206. The dielectric insulating layer 216 electrically isolates the row electrode leads 204 from the column electrode leads 206 to prevent short circuits. Each two adjacent row electrode leads 204 and two adjacent column electrode leads 206 form a grid 214, and each grid 214 positions a pixel unit 220. The plurality of pixel units 220 are arranged in a matrix corresponding to the grid 214. It can be understood that the field emission display device 200 needs to be packaged in a vacuum environment during operation.
所述絕緣基底202為一絕緣基板，如陶瓷基板、玻璃基板、樹脂基板、石英基板等。所述絕緣基底202的大小與厚度不限，本領域技術人員可以根據實際需要選擇。本實施例中，所述絕緣基底 202優選為一玻璃基板，其厚度大於1毫米，邊長大於1壓米。 The insulating substrate 202 is an insulating substrate such as a ceramic substrate, a glass substrate, a resin substrate, a quartz substrate or the like. The size and thickness of the insulating substrate 202 are not limited, and those skilled in the art can select according to actual needs. In this embodiment, the insulating substrate 202 is preferably a glass substrate having a thickness greater than 1 mm and a side length greater than 1 cm.
所述行電極引線204與列電極引線206為導電體，如金屬層等。本實施例中，該複數個行電極引線204與複數個列電極引線206優選為採用導電漿料列印的橫截面為矩形的平面導電體，且該複數個行電極引線204的行間距為50微米~2厘米，複數個列電極引線206的列間距為50微米~2厘米。該行電極引線204與列電極引線206的寬度為30微米~100微米，厚度為10微米~50微米。本實施例中，該行電極引線204與列電極引線206的交叉角度為10度到90度，優選為90度，該行電極引線204與列電極引線206相互垂直。本實施例中，可通過絲網列印法將導電漿料列印於絕緣基底202表面製備行電極引線204與列電極引線206。該導電漿料的成分包括金屬粉、低熔點玻璃粉和黏結劑；其中，該金屬粉優選為銀粉，該黏結劑優選為松油醇或乙基纖維素。該導電漿料中，金屬粉的重量比為50~90%，低熔點玻璃粉的重量比為2~10%，黏結劑的重量比為8~40%。本實施例中，將所述行電極引線204的延伸方向定義為X方向，所述列電極引線206的延伸方向定義為Y方向。 The row electrode lead 204 and the column electrode lead 206 are electrical conductors such as a metal layer or the like. In this embodiment, the plurality of row electrode leads 204 and the plurality of column electrode leads 206 are preferably planar conductors having a rectangular cross section printed by a conductive paste, and the row spacing of the plurality of row electrode leads 204 is 50. The micrometers are up to 2 cm, and the column spacing of the plurality of column electrode leads 206 is 50 micrometers to 2 centimeters. The row electrode lead 204 and the column electrode lead 206 have a width of 30 micrometers to 100 micrometers and a thickness of 10 micrometers to 50 micrometers. In this embodiment, the intersection angle of the row electrode lead 204 and the column electrode lead 206 is 10 degrees to 90 degrees, preferably 90 degrees, and the row electrode lead 204 and the column electrode lead 206 are perpendicular to each other. In this embodiment, the row electrode lead 204 and the column electrode lead 206 can be prepared by printing a conductive paste on the surface of the insulating substrate 202 by a screen printing method. The composition of the conductive paste includes metal powder, low-melting glass frit, and a binder; wherein the metal powder is preferably silver powder, and the binder is preferably terpineol or ethyl cellulose. In the conductive paste, the weight ratio of the metal powder is 50 to 90%, the weight ratio of the low melting point glass powder is 2 to 10%, and the weight ratio of the binder is 8 to 40%. In the present embodiment, the extending direction of the row electrode lead 204 is defined as the X direction, and the extending direction of the column electrode lead 206 is defined as the Y direction.
所述複數個畫素單元220對應設置於上述網格214中，且每個網格214中設置一個畫素單元220。每個畫素單元220包括一第一電極212、一第二電極210、一陰極發射體208、以及一螢光粉層218。該第一電極212與第二電極210相對且間隔設置於絕緣基底202表面。所述第一電極212作為陰極電極，且與所述列電極引線206電連接。所述第二電極210作為陽極電極，且與所述行電極引線204電連接。該陰極發射體208設置於所述第一電極212與第二電極210之間。所述陰極發射體208一端與所述第一電極212電連接， 另一端指向所述第二電極210，並向第二電極210延伸作為陰極發射體208的電子發射端222。所述電子發射端222與所述第二電極210間隔設置。該陰極發射體208與所述絕緣基底202間隔設置。所述螢光粉層218設置於所述第二電極210的一表面。所述電子發射端222發射的電子可以打到螢光粉層218而使之發光。 The plurality of pixel units 220 are correspondingly disposed in the grid 214, and one pixel unit 220 is disposed in each of the grids 214. Each pixel unit 220 includes a first electrode 212, a second electrode 210, a cathode emitter 208, and a phosphor layer 218. The first electrode 212 is opposite to and spaced apart from the second electrode 210 on the surface of the insulating substrate 202. The first electrode 212 serves as a cathode electrode and is electrically connected to the column electrode lead 206. The second electrode 210 functions as an anode electrode and is electrically connected to the row electrode lead 204. The cathode emitter 208 is disposed between the first electrode 212 and the second electrode 210. One end of the cathode emitter 208 is electrically connected to the first electrode 212, The other end is directed to the second electrode 210 and extends toward the second electrode 210 as an electron-emitting end 222 of the cathode emitter 208. The electron emission end 222 is spaced apart from the second electrode 210. The cathode emitter 208 is spaced apart from the insulating substrate 202. The phosphor layer 218 is disposed on a surface of the second electrode 210. The electrons emitted by the electron-emitting end 222 can strike the phosphor layer 218 to emit light.
所述第一電極212為導電體，如金屬層、氧化銦錫(ITO)層、導電漿料等。本實施例中，所述第一電極212為一橫截面為矩形的平面導電體，其尺寸依據網格214的尺寸決定。所述第一電極212直接與所述列電極引線206接觸，從而實現電連接。所述第一電極212在Y方向上延伸的長度為30微米~1.5壓米，在X方向上延伸的寬度為20微米~1厘米，厚度為10微米~500微米。優選地，所述第一電極212在Y方向上延伸的長度為100微米~700微米，在X方向上延伸的寬度為50微米~500微米，厚度為20微米~100微米。 The first electrode 212 is an electrical conductor such as a metal layer, an indium tin oxide (ITO) layer, a conductive paste, or the like. In this embodiment, the first electrode 212 is a planar electric conductor having a rectangular cross section, and the size thereof is determined according to the size of the grid 214. The first electrode 212 is in direct contact with the column electrode lead 206 to achieve electrical connection. The first electrode 212 has a length extending from 30 micrometers to 1.5 millimeters in the Y direction, a width of 20 micrometers to 1 centimeter in the X direction, and a thickness of 10 micrometers to 500 micrometers. Preferably, the first electrode 212 has a length extending from 100 micrometers to 700 micrometers in the Y direction, a width of 50 micrometers to 500 micrometers in the X direction, and a thickness of 20 micrometers to 100 micrometers.
所述第二電極210的尺寸與所述第一電極212的尺寸基本相同。優選地，所述第二電極210在Y方向上延伸的長度略大於所述第一電極212的長度，所述第二電極210的厚度略大於所述第一電極212的厚度。所述第二電極210具有一相對第一電極212設置且背向所述絕緣基底202設置的承載面2102。所謂“相對第一電極212設置”指所述承載面2102面對所述第一電極212設置，從而使得所述第一電極212和第二電極210分別位於承載面2102的兩側。所謂“背向所述絕緣基底202設置”指所述承載面2102至少部分面向遠離所述絕緣基底202的方向。所述承載面2102可以為平面或曲面。當所述承載面2102為平面時，所述承載面2102與絕緣基底202的表面形成一大於零度且小於90度的夾角。優選地，該夾角的角 度大於等於30度且小於等於60度。當所述承載面2102為曲面時，該承載面2102可以為凸面或凹面。所述承載面2102可以與絕緣基底202的表面直接相交或間隔設置。本實施例中，所述第二電極210為沿Y方向延伸的長條形三棱柱，且所述第二電極210在X方向的寬度沿著遠離絕緣基底202的方向逐漸減小，從而使該第二電極210具有一相對陰極發射體208設置的斜面作為承載面2102。所述承載面2102與絕緣基底202的表面之間形成一約60度的夾角。 The size of the second electrode 210 is substantially the same as the size of the first electrode 212. Preferably, the length of the second electrode 210 extending in the Y direction is slightly larger than the length of the first electrode 212, and the thickness of the second electrode 210 is slightly larger than the thickness of the first electrode 212. The second electrode 210 has a bearing surface 2102 disposed opposite to the first electrode 212 and disposed away from the insulating substrate 202. The “relative to the first electrode 212” means that the bearing surface 2102 is disposed facing the first electrode 212 such that the first electrode 212 and the second electrode 210 are respectively located on both sides of the bearing surface 2102. By "provided facing away from the insulating substrate 202" is meant that the bearing surface 2102 faces at least partially away from the insulating substrate 202. The bearing surface 2102 can be a flat surface or a curved surface. When the bearing surface 2102 is planar, the bearing surface 2102 forms an angle greater than zero degrees and less than 90 degrees with the surface of the insulating substrate 202. Preferably, the angle of the angle The degree is greater than or equal to 30 degrees and less than or equal to 60 degrees. When the bearing surface 2102 is a curved surface, the bearing surface 2102 may be convex or concave. The bearing surface 2102 can be directly intersected or spaced apart from the surface of the insulating substrate 202. In this embodiment, the second electrode 210 is an elongated triangular prism extending in the Y direction, and the width of the second electrode 210 in the X direction is gradually decreased along a direction away from the insulating substrate 202, thereby The second electrode 210 has a slope provided with respect to the cathode emitter 208 as a bearing surface 2102. The bearing surface 2102 forms an angle of about 60 degrees with the surface of the insulating substrate 202.
所述第二電極210的材料與所述第一電極212的材料相同。本實施例中，所述第一電極212與第二電極210的材料為導電漿料。所述第一電極212與第二電極210可通過絲網列印法列印於所述絕緣基底202表面。所述第二電極210可通過複數次列印導電漿料，且逐漸減小列印的導電漿料的寬度的方法形成。由於每次列印的導電漿料的寬度逐漸減小，且導電漿料本身具有一定的流淌性，從而形成承載面2102。 The material of the second electrode 210 is the same as the material of the first electrode 212. In this embodiment, the material of the first electrode 212 and the second electrode 210 is a conductive paste. The first electrode 212 and the second electrode 210 may be printed on the surface of the insulating substrate 202 by screen printing. The second electrode 210 may be formed by printing a conductive paste a plurality of times and gradually reducing the width of the printed conductive paste. Since the width of the conductive paste printed each time is gradually reduced, and the conductive paste itself has a certain fluidity, the bearing surface 2102 is formed.
所述螢光粉層218設置於所述第二電極210的承載面2102，使得螢光粉層218不但具有較大的面積，而且容易被電子發射端222發射的電子轟擊到，從而使得場發射顯示裝置200具有較高的亮度。具體的，所述螢光粉層218可設置於承載面2102的部分表面或全部表面。當螢光粉層218設置於所述第二電極210的部分承載面2102時，所述螢光粉層218設置於承載面2102與電子發射端222相對的部分。所述螢光粉層218的材料可為白色螢光粉，也可以為單色螢光粉，例如紅色，綠色，藍色螢光粉等，當電子轟擊螢光粉層218時可發出白光或其他顏色可見光。該螢光粉層218可以採用沈積法、列印法、光刻法或塗敷法設置於第二電極210的承載 面2102。所述螢光粉層218的厚度可以根據需要選擇。本實施例中，所述螢光粉層218的厚度為5微米~50微米。 The phosphor layer 218 is disposed on the bearing surface 2102 of the second electrode 210, so that the phosphor layer 218 not only has a large area, but is also easily bombarded by electrons emitted from the electron emission end 222, thereby causing field emission. The display device 200 has a high brightness. Specifically, the phosphor layer 218 may be disposed on part or all of the surface of the bearing surface 2102. When the phosphor layer 218 is disposed on the partial bearing surface 2102 of the second electrode 210, the phosphor layer 218 is disposed on a portion of the bearing surface 2102 opposite to the electron emitting end 222. The material of the phosphor powder layer 218 may be white fluorescent powder or monochromatic fluorescent powder, such as red, green, blue fluorescent powder, etc., when the electron bombards the fluorescent powder layer 218, it may emit white light or Other colors are visible. The phosphor layer 218 can be disposed on the second electrode 210 by a deposition method, a printing method, a photolithography method or a coating method. Face 2102. The thickness of the phosphor layer 218 can be selected as needed. In this embodiment, the phosphor powder layer 218 has a thickness of 5 micrometers to 50 micrometers.
所述陰極發射體208為線狀電子發射體，具體地，所述陰極發射體208可選自矽線、奈米碳管、碳纖維及奈米碳管線等中的一種或複數種。而且，陰極發射體208包括一電子發射端222指向所述承載面2102，該電子發射端222為陰極發射體208遠離第一電極212的一端。優選地，所述陰極發射體208的延伸方向與所述承載面2102相交。本實施例中，所述陰極發射體208的延伸方向基本平行於絕緣基底202的表面，即所述陰極發射體208的延伸方向與所述承載面2102之間形成一大於零度且小於90度的夾角。優選地，該夾角大於等於30度且小於等於60度。本實施例中，陰極發射體208包括複數個平行排列的奈米碳管線。採用複數個平行排列的奈米碳管線作為陰極發射體208時，每個奈米碳管線的一端與第一電極212電連接，另一端指向第二電極210的承載面2102，作為陰極發射體208的電子發射端222。該電子發射端222與第二電極210的承載面2102之間的距離為10微米~500微米。優選地，該電子發射端222與第二電極210的承載面2102之間的距離為50微米~300微米。 The cathode emitter 208 is a linear electron emitter. Specifically, the cathode emitter 208 may be selected from one or more of a twisted wire, a carbon nanotube, a carbon fiber, and a carbon carbon pipeline. Moreover, cathode emitter 208 includes an electron emitting end 222 directed toward said carrier surface 2102, and said electron emitting end 222 is an end of cathode emitter 208 remote from first electrode 212. Preferably, the direction in which the cathode emitter 208 extends intersects the bearing surface 2102. In this embodiment, the extending direction of the cathode emitter 208 is substantially parallel to the surface of the insulating substrate 202, that is, the extending direction of the cathode emitter 208 and the bearing surface 2102 form a greater than zero degree and less than 90 degrees. Angle. Preferably, the included angle is greater than or equal to 30 degrees and less than or equal to 60 degrees. In this embodiment, the cathode emitter 208 includes a plurality of carbon nanotubes arranged in parallel. When a plurality of parallel arranged nanocarbon lines are used as the cathode emitter 208, one end of each nanocarbon line is electrically connected to the first electrode 212, and the other end is directed to the bearing surface 2102 of the second electrode 210 as a cathode emitter 208. The electron emitting end 222. The distance between the electron emitting end 222 and the bearing surface 2102 of the second electrode 210 is 10 micrometers to 500 micrometers. Preferably, the distance between the electron emission end 222 and the bearing surface 2102 of the second electrode 210 is 50 micrometers to 300 micrometers.
所述陰極發射體208一端與第一電極212的電連接方式可以為直接電連接或通過一導電膠電連接，也可以通過分子間力或者其他方式實現。該奈米碳管線的長度為10微米~1厘米，且相鄰的奈米碳管線之間的間距為1微米~500微米。該奈米碳管線包括複數個沿奈米碳管線長度方向排列的奈米碳管。該奈米碳管線可為複數個奈米碳管組成的純結構，所述“純結構”指該奈米碳管線中奈米 碳管未經過任何化學修飾或功能化處理。優選地，所述奈米碳管線為自支撐結構。所謂“自支撐結構”即該奈米碳管線無需通過一支撐體支撐，也能保持自身特定的形狀。所述奈米碳管線中的奈米碳管通過范德華力相連，奈米碳管的軸向均基本沿奈米碳管線的長度方向延伸，其中，每一奈米碳管與在該延伸方向上相鄰的奈米碳管通過范德華力首尾相連。所述奈米碳管線中的奈米碳管包括單壁、雙壁及多壁奈米碳管中的一種或複數種。所述奈米碳管的長度範圍為10微米~100微米，且奈米碳管的直徑小於15奈米。 The electrical connection between one end of the cathode emitter 208 and the first electrode 212 may be directly electrically connected or electrically connected through a conductive adhesive, or may be realized by intermolecular force or other means. The nano carbon pipeline has a length of 10 micrometers to 1 centimeter and a spacing between adjacent nanocarbon pipelines of 1 micrometer to 500 micrometers. The nanocarbon pipeline includes a plurality of carbon nanotubes arranged along the length of the nanocarbon pipeline. The nano carbon pipeline may be a pure structure composed of a plurality of carbon nanotubes, and the "pure structure" refers to a nanometer in the nano carbon pipeline. The carbon tube is not chemically modified or functionalized. Preferably, the nanocarbon pipeline is a self supporting structure. The so-called "self-supporting structure" means that the nanocarbon pipeline can maintain its own specific shape without being supported by a support. The carbon nanotubes in the nanocarbon pipeline are connected by van der Waals force, and the axial directions of the carbon nanotubes extend substantially along the length of the nanocarbon pipeline, wherein each carbon nanotube is in the extending direction Adjacent carbon nanotubes are connected end to end by van der Waals force. The carbon nanotubes in the nanocarbon pipeline include one or more of single-walled, double-walled, and multi-walled carbon nanotubes. The carbon nanotubes have a length ranging from 10 micrometers to 100 micrometers, and the carbon nanotubes have a diameter of less than 15 nanometers.
本實施例中的陰極發射體208的製備方法具體包括以下步驟： The method for preparing the cathode emitter 208 in this embodiment specifically includes the following steps:
步驟一，提供至少一個奈米碳管膜。 In step one, at least one carbon nanotube film is provided.
所述奈米碳管膜從一奈米碳管陣列拉取獲得。該奈米碳管膜中包括複數個首尾相連且定向排列的奈米碳管。所述奈米碳管膜的結構及其製備方法請參見范守善等人於2007年2月12日申請的，於2010年7月11公告的第I327177號台灣公告專利申請“奈米碳管薄膜結構及其製備方法”，申請人：鴻海精密工業股份有限公司。 The carbon nanotube film is obtained by pulling from a carbon nanotube array. The carbon nanotube film comprises a plurality of carbon nanotubes connected end to end and oriented. For the structure of the carbon nanotube film and the preparation method thereof, please refer to the patent application "Nano Carbon Tube Film Structure" of the No. I327177, which was filed on July 12, 2010 by Fan Shoushan et al. And its preparation method", applicant: Hon Hai Precision Industry Co., Ltd.
步驟二，將該奈米碳管膜鋪設覆蓋於第一電極212和第二電極210表面。 In step two, the carbon nanotube film is laid on the surface of the first electrode 212 and the second electrode 210.
可以理解，當將至少兩個奈米碳管薄膜重疊鋪設於第一電極212和第二電極210表面時，相鄰兩個奈米碳管膜中的奈米碳管的軸向延伸方向基本相同。將奈米碳管膜鋪設覆蓋於上述第一電極212和第二電極210時，要確保該奈米碳管膜中的奈米碳管的延伸方向均基本為從第一電極212向第二電極210延伸。本實施例中， 由於在後續步驟中要將奈米碳管膜加工成複數個平行且等間隔排列的奈米碳管線，故，奈米碳管膜的層數不易太多，優選為1~5層。進一步的，可用有機溶劑對所述奈米碳管膜進行處理，該有機溶劑為揮發性有機溶劑，如乙醇、甲醇、丙酮、二氯乙烷或氯仿，本實施例中優選採用乙醇。該有機溶劑揮發後，在揮發性有機溶劑的表面張力的作用下所述奈米碳管膜會部分聚集形成奈米碳管線。 It can be understood that when at least two carbon nanotube films are overlapped and laid on the surfaces of the first electrode 212 and the second electrode 210, the axial directions of the carbon nanotubes in the adjacent two carbon nanotube films are substantially the same. . When the carbon nanotube film is laid over the first electrode 212 and the second electrode 210, it is ensured that the carbon nanotubes in the carbon nanotube film extend substantially from the first electrode 212 to the second electrode. 210 extension. In this embodiment, Since the carbon nanotube film is processed into a plurality of parallel and equally spaced nanocarbon lines in the subsequent step, the number of layers of the carbon nanotube film is not too much, and preferably 1 to 5 layers. Further, the carbon nanotube film may be treated with an organic solvent which is a volatile organic solvent such as ethanol, methanol, acetone, dichloroethane or chloroform, and ethanol is preferably used in this embodiment. After the organic solvent is volatilized, the carbon nanotube film partially aggregates to form a nanocarbon line under the surface tension of the volatile organic solvent.
步驟三，切割奈米碳管膜，使第一電極212與第二電極210之間的奈米碳管膜斷開，形成複數個平行排列的奈米碳管線固定於第一電極212表面作為陰極發射體208。 Step 3, cutting the carbon nanotube film, breaking the carbon nanotube film between the first electrode 212 and the second electrode 210, forming a plurality of parallel arranged nano carbon lines fixed on the surface of the first electrode 212 as a cathode Emitter 208.
所述切割奈米碳管薄膜結構的方法為鐳射燒蝕法、電子束掃描法或加熱熔斷法。本實施例中，優選採用鐳射燒蝕法切割奈米碳管膜，具體包括以下步驟： The method for cutting the structure of the carbon nanotube film is a laser ablation method, an electron beam scanning method or a heat melting method. In this embodiment, the carbon nanotube film is preferably cut by laser ablation, and specifically includes the following steps:
首先，採用一定寬度的雷射光束沿著每個行電極引線204進行掃描，去除不同行的電極之間的奈米碳管膜，使得留下的奈米碳管膜僅設置於同一行的第一電極212與第二電極210之表面。 First, a laser beam of a certain width is scanned along each row electrode lead 204 to remove the carbon nanotube film between the electrodes of different rows, so that the remaining carbon nanotube film is only disposed in the same row. An electrode 212 and a surface of the second electrode 210.
其次，採用一定寬度的雷射光束沿著每個列電極引線206進行掃描，去除列電極引線206與相鄰第二電極210之間的奈米碳管膜，並使得同一網格214中的第一電極212與第二電極210之間的奈米碳管膜與第二電極210斷開。 Next, a laser beam of a certain width is scanned along each column electrode lead 206 to remove the carbon nanotube film between the column electrode lead 206 and the adjacent second electrode 210, and the first grid 214 is replaced. The carbon nanotube film between the one electrode 212 and the second electrode 210 is disconnected from the second electrode 210.
該步驟中，在雷射光束照射的過程中，空氣中的氧氣會氧化鐳射照射到的奈米碳管，使得奈米碳管蒸發，從而使奈米碳管膜產生斷裂，在奈米碳管膜的斷裂處會形成一電子發射端222，且電子 發射端222與第二電極210之間形成一間隔。本實施例中，所用的雷射光束的功率為10~50瓦，掃描速度為0.1~10000毫米/秒。所述雷射光束的寬度為1微米~400微米。 In this step, during the irradiation of the laser beam, the oxygen in the air oxidizes the carbon nanotubes irradiated by the laser, so that the carbon nanotubes evaporate, thereby causing the carbon nanotube film to be broken, in the carbon nanotubes. An electron emission end 222 is formed at the break of the film, and the electron A gap is formed between the transmitting end 222 and the second electrode 210. In this embodiment, the laser beam used has a power of 10 to 50 watts and a scanning speed of 0.1 to 10000 mm/sec. The laser beam has a width of from 1 micrometer to 400 micrometers.
進一步，該場發射顯示裝置200的每個畫素單元220可以進一步包括一固定元件224設置於第一電極212表面，以將陰極發射體208固定於第一電極212表面。所述固定元件224可由絕緣材質或導電材質構成。本實施例中，該固定元件224為導電漿料層。 Further, each of the pixel units 220 of the field emission display device 200 may further include a fixing member 224 disposed on the surface of the first electrode 212 to fix the cathode emitter 208 to the surface of the first electrode 212. The fixing member 224 may be made of an insulating material or a conductive material. In this embodiment, the fixing member 224 is a conductive paste layer.
請參閱圖3和圖4，本發明第二實施例提供一種場發射顯示裝置300，其包括一絕緣基底302，複數個畫素單元320、以及複數個行電極引線304與複數個列電極引線306。本實施例附圖僅給出一個畫素單元320。所述場發射顯示裝置300與本發明第一實施例提供的場發射顯示裝置200的結構基本相同，其區別在於：所述第一電極312至少部分環繞所述第二電極310設置。所謂“至少部分環繞所述第二電極310設置”指所述第一電極312至少部分圍繞所述第二電極310延伸，從而形成“L”形、“U”形、“C”形、半環形或環形等。 Referring to FIG. 3 and FIG. 4 , a second embodiment of the present invention provides a field emission display device 300 including an insulating substrate 302 , a plurality of pixel units 320 , and a plurality of row electrode leads 304 and a plurality of column electrode leads 306 . . The figure of the present embodiment only shows one pixel unit 320. The field emission display device 300 has substantially the same structure as the field emission display device 200 provided by the first embodiment of the present invention, except that the first electrode 312 is at least partially disposed around the second electrode 310. By "providing at least partially around the second electrode 310" means that the first electrode 312 extends at least partially around the second electrode 310 to form an "L" shape, a "U" shape, a "C" shape, a semi-ring shape. Or ring and so on.
本實施例中，所述第二電極310為一長條形。所述第一電極312包括一第一子電極3121，一第二子電極3123，以及一第三子電極3125。所述第一子電極3121和第二子電極3123分別設置於第二電極310兩側，且位於第二電極310與相鄰的兩個列電極引線306之間。所述第三子電極3125連接所述第一子電極3121和第二子電極3123從而形成一“U”形的一體結構，以將所述第二電極310環繞。所述陰極發射體308分別設置於所述第一子電極3121和第二子電極3123表面，且每個陰極發射體308具有一電子發射端322指向 所述第二電極310方向。所述第二電極310的寬度沿著遠離絕緣基底302的方向逐漸減小，從而使該第二電極310具有兩個分別與兩側的陰極發射體308的電子發射端322相對設置的斜面作為承載面3102。所述螢光粉層318分別設置於所述第二電極310的兩個承載面3102，且所述電子發射端322指向螢光粉層318。所述兩個承載面3102之間的夾角大於等於30度且小於等於120度，所述每個承載面3102與絕緣基底302表面的夾角大於等於30度且小於等於75度。優選地，所述兩個承載面3102之間的夾角為大於等於60度且小於等於90度，所述每個承載面3102與絕緣基底302表面的夾角為大於等於45度且小於等於60度。本實施例中，所述兩個承載面3102之間的夾角，以及兩個承載面3102與絕緣基底302表面的夾角均為60度。 In this embodiment, the second electrode 310 has an elongated shape. The first electrode 312 includes a first sub-electrode 3121, a second sub-electrode 3123, and a third sub-electrode 3125. The first sub-electrode 3121 and the second sub-electrode 3123 are respectively disposed on two sides of the second electrode 310 and located between the second electrode 310 and the adjacent two column electrode leads 306. The third sub-electrode 3125 connects the first sub-electrode 3121 and the second sub-electrode 3123 to form a "U"-shaped integrated structure to surround the second electrode 310. The cathode emitters 308 are respectively disposed on the surfaces of the first sub-electrode 3121 and the second sub-electrode 3123, and each cathode emitter 308 has an electron-emitting end 322 pointing The second electrode 310 is oriented. The width of the second electrode 310 is gradually decreased along a direction away from the insulating substrate 302, so that the second electrode 310 has two inclined faces respectively disposed opposite to the electron emitting ends 322 of the cathode emitters 308 on both sides. Face 3102. The phosphor layers 318 are respectively disposed on the two bearing surfaces 3102 of the second electrode 310, and the electron emission end 322 is directed to the phosphor layer 318. The angle between the two bearing surfaces 3102 is greater than or equal to 30 degrees and less than or equal to 120 degrees, and the angle between each of the bearing surfaces 3102 and the surface of the insulating substrate 302 is greater than or equal to 30 degrees and less than or equal to 75 degrees. Preferably, the angle between the two bearing surfaces 3102 is 60 degrees or more and 90 degrees or less, and the angle between each of the bearing surfaces 3102 and the surface of the insulating substrate 302 is 45 degrees or more and 60 degrees or less. In this embodiment, the angle between the two bearing surfaces 3102 and the angle between the two bearing surfaces 3102 and the surface of the insulating substrate 302 are both 60 degrees.
本實施例中，由於第一子電極3121和第二子電極3123分別設置於所述第二電極310的兩側，且所述第一子電極3121和第二子電極3123的表面均設置有陰極發射體308，故，提高每個畫素單元320的場發射電流。由於所述第二電極310具有兩個分別與兩側的陰極發射體308相對設置的承載面3102，且所述螢光粉層318分別設置於所述第二電極310的兩個承載面3102，故，提高每個畫素單元320的發光面積和顯示均勻度。故，所述場發射顯示裝置300具有較大的亮度和較高的顯示均勻度。 In this embodiment, the first sub-electrode 3121 and the second sub-electrode 3123 are respectively disposed on two sides of the second electrode 310, and the surfaces of the first sub-electrode 3121 and the second sub-electrode 3123 are provided with a cathode. The emitter 308, therefore, increases the field emission current of each pixel unit 320. The second electrode 310 has two bearing surfaces 3102 respectively disposed opposite to the cathode emitters 308 on both sides, and the phosphor powder layers 318 are respectively disposed on the two bearing surfaces 3102 of the second electrode 310. Therefore, the light-emitting area and display uniformity of each pixel unit 320 are increased. Therefore, the field emission display device 300 has a large brightness and a high display uniformity.
請參閱圖5、圖6，本發明第三實施例提供一種場發射顯示裝置400，其包括一絕緣基底402，複數個設置於該絕緣基底402表面的畫素單元420、以及複數個行電極引線404與複數個列電極引線406。本實施例附圖僅給出一個畫素單元420。所述場發射顯示裝 置400與本發明第二實施例提供的場發射顯示裝置300的結構基本相同，其區別在於：所述第一電極412用作陽極電極，所述第二電極410用作陰極電極，所述陰極發射體408設置於所述第二電極410表面，所述螢光粉層418設置於所述第一電極412的承載面4122表面。 Referring to FIG. 5 and FIG. 6 , a third embodiment of the present invention provides a field emission display device 400 including an insulating substrate 402 , a plurality of pixel units 420 disposed on the surface of the insulating substrate 402 , and a plurality of row electrode leads. 404 and a plurality of column electrode leads 406. The figure of the embodiment shows only one pixel unit 420. Field emission display The arrangement 400 is substantially the same as the structure of the field emission display device 300 provided by the second embodiment of the present invention, except that the first electrode 412 functions as an anode electrode and the second electrode 410 functions as a cathode electrode. The emitter 408 is disposed on the surface of the second electrode 410, and the phosphor layer 418 is disposed on the surface of the bearing surface 4122 of the first electrode 412.
具體地，本實施例中，所述第二電極410為橫截面為矩形的平面導電體。所述陰極發射體408設置於第二電極410表面，且陰極發射體408的電子發射端422分為兩部分，分別指向位於所述第二電極410兩側的第一子電極4121和第二子電極4123方向。本實施例中，所述陰極發射體408為複數個橫穿第二電極410的奈米碳管線，且每個奈米碳管線的兩端分別指向位於所述第二電極410兩側的第一子電極4121和第二子電極4123。所述第一子電極4121和第二子電極4123的寬度均沿著遠離絕緣基底402的方向逐漸減小，從而使該第一子電極4121和第二子電極4123分別具有一與陰極發射體408相對設置的斜面作為承載面4122。所述螢光粉層418分別設置於所述第一子電極4121和第二子電極4123的承載面4122，且所述電子發射端422指向螢光粉層418。所述承載面4122與絕緣基底402的表面形成一大於零度且小於90度的夾角。優選地，該夾角的角度大於等於30度且小於60度。本實施例中，所述承載面4122與絕緣基底402表面的夾角為45度。 Specifically, in this embodiment, the second electrode 410 is a planar electric conductor having a rectangular cross section. The cathode emitter 408 is disposed on the surface of the second electrode 410, and the electron emission end 422 of the cathode emitter 408 is divided into two parts, respectively pointing to the first sub-electrode 4121 and the second sub-section located on opposite sides of the second electrode 410. The direction of the electrode 4123. In this embodiment, the cathode emitter 408 is a plurality of nano carbon pipelines crossing the second electrode 410, and the two ends of each nanocarbon pipeline are respectively directed to the first sides of the second electrode 410. The sub-electrode 4121 and the second sub-electrode 4123. The widths of the first sub-electrode 4121 and the second sub-electrode 4123 are gradually decreased along a direction away from the insulating substrate 402, so that the first sub-electrode 4121 and the second sub-electrode 4123 have a cathode emitter 408 and a cathode emitter 408, respectively. The oppositely disposed slope faces serve as the bearing surface 4122. The phosphor layer 418 is disposed on the bearing surface 4122 of the first sub-electrode 4121 and the second sub-electrode 4123, respectively, and the electron-emitting end 422 is directed to the phosphor layer 418. The bearing surface 4122 and the surface of the insulating substrate 402 form an angle greater than zero degrees and less than 90 degrees. Preferably, the angle of the included angle is greater than or equal to 30 degrees and less than 60 degrees. In this embodiment, the angle between the bearing surface 4122 and the surface of the insulating substrate 402 is 45 degrees.
可以理解，本實施例中，所述第三子電極4125的寬度也可以沿著遠離絕緣基底402的方向逐漸減小，從而使該第三子電極4125具有一與陰極發射體408相對設置的斜面作為承載面4122。所述陰極發射體408的部分電子發射端422指向第三子電極4125表面的螢 光粉層418。 It can be understood that, in this embodiment, the width of the third sub-electrode 4125 may also gradually decrease along a direction away from the insulating substrate 402, so that the third sub-electrode 4125 has a slope opposite to the cathode emitter 408. As the bearing surface 4122. A portion of the electron emission end 422 of the cathode emitter 408 is directed to the surface of the third sub-electrode 4125. Light powder layer 418.
本實施例中，由於至少所述第一子電極4121和第二子電極4123均具有一與陰極發射體408相對設置的承載面4122，且所述螢光粉層418分別設置於所述兩個承載面4122，故，提高每個畫素單元420的發光面積和均勻度。所述第二電極410表面設置有陰極發射體408，且陰極發射體408的電子發射端422至少分別指向位於所述第二電極410兩側的螢光粉層418，故，提高每個畫素單元420的場發射電流。故，所述場發射顯示裝置400具有較大的亮度和較高的顯示均勻度。 In this embodiment, at least the first sub-electrode 4121 and the second sub-electrode 4123 each have a bearing surface 4122 disposed opposite to the cathode emitter 408, and the phosphor layer 418 is disposed on the two The bearing surface 4122, therefore, increases the light-emitting area and uniformity of each pixel unit 420. The surface of the second electrode 410 is provided with a cathode emitter 408, and the electron emitting ends 422 of the cathode emitter 408 are at least respectively directed to the phosphor layer 418 located on both sides of the second electrode 410, so that each pixel is improved. The field emission current of unit 420. Therefore, the field emission display device 400 has a large brightness and a high display uniformity.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
200‧‧‧場發射顯示裝置 200‧‧ ‧ field emission display device
202‧‧‧絕緣基底 202‧‧‧Insulation base
206‧‧‧列電極引線 206‧‧‧ column electrode lead
208‧‧‧陰極發射體 208‧‧‧ cathode emitter
210‧‧‧第二電極 210‧‧‧second electrode
2102‧‧‧承載面 2102‧‧‧ bearing surface
212‧‧‧第一電極 212‧‧‧First electrode
218‧‧‧螢光粉層 218‧‧‧Fluorescent powder layer
220‧‧‧畫素單元 220‧‧‧ pixel unit
222‧‧‧電子發射端 222‧‧‧Electronic transmitter
224‧‧‧固定元件 224‧‧‧Fixed components
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| JP2006173007A (en) * | 2004-12-17 | 2006-06-29 | Toshiba Corp | Electron emission element, electron emission device, and display device |
| US20090236965A1 (en) * | 2008-03-19 | 2009-09-24 | Tsinghua University | Field emission display |
| TW201005785A (en) * | 2008-07-25 | 2010-02-01 | Hon Hai Prec Ind Co Ltd | Electron emission device |
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| JP2006173007A (en) * | 2004-12-17 | 2006-06-29 | Toshiba Corp | Electron emission element, electron emission device, and display device |
| US20090236965A1 (en) * | 2008-03-19 | 2009-09-24 | Tsinghua University | Field emission display |
| TW201005785A (en) * | 2008-07-25 | 2010-02-01 | Hon Hai Prec Ind Co Ltd | Electron emission device |
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