TWI398895B - Method for making field emission device - Google Patents
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本發明涉及一種場發射裝置的製備方法。 The invention relates to a method of preparing a field emission device.
場發射顯示器係繼陰極射線管(CRT)顯示器和液晶顯示器(LCD)之後，最具發展潛力的下一代新興技術。相對於先前的顯示器，場發射顯示器具有顯示效果好、視角大、功耗小及體積小等優點，尤其基於奈米碳管的場發射顯示器，近年來越來越受到重視。 Field emission displays are the next generation of emerging technologies with the most potential after cathode ray tube (CRT) displays and liquid crystal displays (LCDs). Compared with the previous display, the field emission display has the advantages of good display effect, large viewing angle, low power consumption and small volume, especially the field emission display based on carbon nanotubes, which has received more and more attention in recent years.
場發射裝置係場發射顯示器的重要元件。先前技術中，場發射裝置的製備方法通常包括以下步驟：提供一絕緣基底；在絕緣基底上形成複數陰極電極；在絕緣基底上形成一具有複數通孔的介質層，使陰極電極通過開孔暴露；在暴露的陰極電極上形成電子發射體及在介質層上形成複數柵極。 The field emission device is an important component of the field emission display. In the prior art, a method for fabricating a field emission device generally includes the steps of: providing an insulating substrate; forming a plurality of cathode electrodes on the insulating substrate; forming a dielectric layer having a plurality of via holes on the insulating substrate, exposing the cathode electrode through the opening Forming an electron emitter on the exposed cathode electrode and forming a plurality of gates on the dielectric layer.
然而，以上述方法製備的場發射裝置中，電子發射體與陰極電極的結合力較差。以基於奈米碳管的場發射裝置為例，電子發射體通常為採用化學氣相沈積法製備的奈米碳管陣列。該奈米碳管陣列中的奈米碳管在發射電子時容易被強電場拔出，從而限制該場發射裝置的電子發射能力和壽命。 However, in the field emission device prepared by the above method, the binding force between the electron emitter and the cathode electrode is poor. Taking a carbon nanotube-based field emission device as an example, the electron emitter is usually an array of carbon nanotubes prepared by chemical vapor deposition. The carbon nanotubes in the carbon nanotube array are easily extracted by a strong electric field when emitting electrons, thereby limiting the electron emission capability and lifetime of the field emission device.
有鑒於此，提供一種電子發射體與陰極電極可以牢固結合的場發射裝置的製備方法實為必要。 In view of the above, it is necessary to provide a method of preparing a field emission device in which an electron emitter and a cathode electrode can be firmly coupled.
一種場發射裝置的製備方法，其包括：提供一絕緣基板，該絕緣基板包括一第一表面及與該第一表面相對的第二表面，且該絕緣基板包括一第一表面及與該第一表面相對的第二表面，且該絕緣基板具有複數貫穿該第一表面和第二表面的開孔；對應所述絕緣基板的每個開孔設置至少一電子發射體，所述每一電子發射體包括一固定端及一與該固定端相連的場發射尖端，且該固定端固定於所述絕緣基板的第一表面，該場發射尖端由固定端向開孔內延伸；及，在所述絕緣基板的第一表面上形成複數條狀陰極電極，該複數陰極電極將所述每一電子發射體的固定端固定於所述絕緣基板與所述陰極電極之間。 A method for fabricating a field emission device, comprising: providing an insulating substrate, the insulating substrate comprising a first surface and a second surface opposite to the first surface, and the insulating substrate comprises a first surface and the first surface a second surface opposite to the surface, and the insulating substrate has a plurality of openings extending through the first surface and the second surface; at least one electron emitter is disposed corresponding to each opening of the insulating substrate, each of the electron emitters a fixed end and a field emission tip connected to the fixed end, and the fixed end is fixed to the first surface of the insulating substrate, the field emission tip extends from the fixed end into the opening; and, in the insulation A plurality of strip cathode electrodes are formed on the first surface of the substrate, and the plurality of cathode electrodes fix the fixed end of each of the electron emitters between the insulating substrate and the cathode electrode.
一種場發射裝置的製備方法，其包括：提供一絕緣基板，該絕緣基板包括一第一表面及與該第一表面相對的第二表面，且該絕緣基板具有複數貫穿該第一表面和第二表面的開孔；在所述絕緣基板的第二表面上形成複數條狀柵極電極；對應所述絕緣基板的每個開孔設置至少一電子發射體，所述至少一電子發射體包括一固定端及一與該固定端相連的場發射尖端，且該固定端固定於所述絕緣基板的第一表面，該場發射尖端由固定端向開孔內延伸；及在所述絕緣基板的第一表面上形成複數條狀陰極電極，該複數陰極電極將所述電子發射 體的固定端固定於所述絕緣基板與所述陰極電極之間。 A method for fabricating a field emission device, comprising: providing an insulating substrate, the insulating substrate comprising a first surface and a second surface opposite to the first surface, and the insulating substrate has a plurality of first and second surfaces a plurality of strip-shaped gate electrodes formed on the second surface of the insulating substrate; at least one electron emitter is disposed corresponding to each of the openings of the insulating substrate, and the at least one electron emitter comprises a fixed And a field emission tip connected to the fixed end, and the fixed end is fixed to the first surface of the insulating substrate, the field emission tip extends from the fixed end into the opening; and the first in the insulating substrate Forming a plurality of strip cathode electrodes on the surface, the plurality of cathode electrodes emitting the electrons The fixed end of the body is fixed between the insulating substrate and the cathode electrode.
與先前技術相比，由於採用本發明提供的方法製備的場發射裝置中的電子發射體的一部分固定於絕緣基板與陰極電極之間，故，該電子發射體被牢固地固定在絕緣基板與陰極電極之間，可以承受較大的電場力而不會被電場力拔出，從而使該電子發射體具有更強的電子發射能力和更長的使用壽命。 Compared with the prior art, since a part of the electron emitter in the field emission device prepared by the method provided by the present invention is fixed between the insulating substrate and the cathode electrode, the electron emitter is firmly fixed to the insulating substrate and the cathode. Between the electrodes, it can withstand a large electric field force without being pulled out by the electric field force, so that the electron emitter has stronger electron emission capability and a longer service life.
100,400‧‧‧場發射裝置 100,400‧‧‧ field launcher
110,410‧‧‧絕緣基板 110,410‧‧‧Insert substrate
1102,4102‧‧‧開孔 1102, 4102‧‧‧ openings
1104,4104‧‧‧第二表面 1104, 4104‧‧‧ second surface
1106,4106‧‧‧第一表面 1106, 4106‧‧‧ first surface
120,420‧‧‧陰極電極 120,420‧‧‧cathode electrode
130,430‧‧‧柵極電極 130,430‧‧‧ gate electrode
140‧‧‧電子發射單元 140‧‧‧Electronic emission unit
1402,4402‧‧‧電子發射體 1402, 4402‧‧‧ electron emitters
1404,4404‧‧‧固定端 1404, 4404‧‧‧ fixed end
1406,4406‧‧‧場發射尖端 1406, 4406‧‧ ‧ field launch tip
1408,4408‧‧‧場發射線材 1408, 4408‧‧‧ field emission wire
150,450‧‧‧固定元件 150,450‧‧‧Fixed components
200,500‧‧‧場發射線材供給裝置 200,500‧‧‧ field emission wire supply device
202,502‧‧‧針管 202,502‧‧‧ needle
204,504‧‧‧針頭 204,504‧‧‧ needle
300‧‧‧鐳射 300‧‧‧Laser
圖1至圖6為本發明第一實施例提供的場發射裝置的製備方法的工藝流程圖。 FIG. 1 to FIG. 6 are process flowcharts of a method for fabricating a field emission device according to a first embodiment of the present invention.
圖7為本發明第一實施例製備的場發射裝置的示意圖。 Figure 7 is a schematic illustration of a field emission device prepared in accordance with a first embodiment of the present invention.
圖8為圖7中的場發射裝置沿VIII-VIII線的剖面圖。 Figure 8 is a cross-sectional view of the field emission device of Figure 7 taken along line VIII-VIII.
圖9為本發明第二實施例製備場發射裝置的過程中對應每個開孔設置奈米碳管線狀結構的方法示意圖。 FIG. 9 is a schematic view showing a method of setting a nanocarbon line-like structure corresponding to each opening in the process of preparing a field emission device according to a second embodiment of the present invention.
圖10至圖15為本發明第三實施例提供的場發射裝置的製備方法的工藝流程圖。 10 to FIG. 15 are process flow diagrams of a method of fabricating a field emission device according to a third embodiment of the present invention.
以下將結合附圖詳細說明本發明實施例提供的場發射裝置的製備方法。本發明的場發射裝置的製備方法可以應用至二極型場發射顯示器、三極型場發射顯示器等。 Hereinafter, a method of fabricating a field emission device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The method of fabricating the field emission device of the present invention can be applied to a dipole field emission display, a triode field emission display, or the like.
請參閱圖1至圖6，本發明第一實施例提供一種場發射裝置100的製備方法，其包括以下步驟： Referring to FIG. 1 to FIG. 6 , a first embodiment of the present invention provides a method for fabricating a field emission device 100 , which includes the following steps:
步驟一，提供一絕緣基板110，該絕緣基板110包括一第一表面1106及與該第一表面1106相對的第二表面1104，且該絕緣基板110具有複數貫穿該第一表面1106和第二表面1104的開孔1102。 In the first step, an insulating substrate 110 is provided. The insulating substrate 110 includes a first surface 1106 and a second surface 1104 opposite to the first surface 1106. The insulating substrate 110 has a plurality of first surface 1106 and a second surface. The opening 1102 of 1104.
所述絕緣基板110的材料可以為玻璃、陶瓷、塑膠或聚合物。所述絕緣基板110的形狀與厚度不限，可以根據實際需要製備。優選地，所述絕緣基板110的形狀為正方形或矩形，厚度大於等於15微米。所述絕緣基板110上的複數開孔1102可以均勻分佈或按照預定的圖形分佈。所述開孔1102的直徑可以為3微米至1000微米。本實施例中，所述絕緣基板110為一邊長為50毫米，厚度為1毫米的正方形耐高溫高分子基板。如圖7所示，所述高分子基板上形成有10x10個(共10行，每行10個)呈行列式分佈的開孔1102。所述開孔1102的直徑為500微米的開孔1102。 The material of the insulating substrate 110 may be glass, ceramic, plastic or polymer. The shape and thickness of the insulating substrate 110 are not limited and can be prepared according to actual needs. Preferably, the insulating substrate 110 has a square or rectangular shape and a thickness of 15 μm or more. The plurality of openings 1102 on the insulating substrate 110 may be uniformly distributed or distributed in a predetermined pattern. The opening 1102 may have a diameter of from 3 micrometers to 1000 micrometers. In the present embodiment, the insulating substrate 110 is a square high temperature resistant polymer substrate having a length of 50 mm and a thickness of 1 mm. As shown in FIG. 7, 10x10 (10 rows in total, 10 in each row) are formed on the polymer substrate in an undulating opening 1102. The opening 1102 has an opening 1102 having a diameter of 500 microns.
步驟二，對應所述絕緣基板110的每個開孔1102設置至少一電子發射體1402，所述至少一電子發射體1402包括一固定端1404及一與該固定端1404相連的場發射尖端1406，且該固定端1404固定於所述絕緣基板110的第一表面1106，該場發射尖端1406由固定端1404向開孔1102內延伸。 Step 2, at least one electron emitter 1402 is disposed corresponding to each opening 1102 of the insulating substrate 110. The at least one electron emitter 1402 includes a fixed end 1404 and a field emission tip 1406 connected to the fixed end 1404. The fixed end 1404 is fixed to the first surface 1106 of the insulating substrate 110, and the field emission tip 1406 extends from the fixed end 1404 into the opening 1102.
所述電子發射體1402為一具有柔韌性和自支撐性的，且可以用於發射電子的線狀電子發射體，其包括奈米碳管線狀結構、碳纖維或矽奈米線線狀結構等。可以理解，所述電子發射體1402還可以與至少一具有柔韌性和可塑性的支撐線材平行 緊密設置或扭轉設置。所述支撐線材可以為鐵絲、鋁絲、銅絲、金絲、鉬絲或銀絲等金屬微絲。所述支撐線材的直徑和長度可根據實際需要而選定。優選地，所述支撐體線材的直徑為50微米到500微米。所述支撐線材可以進一步提高電子發射體1402的自支撐性。 The electron emitter 1402 is a flexible and self-supporting linear electron emitter that can emit electrons, and includes a carbon carbon line structure, a carbon fiber or a nanowire line structure, and the like. It can be understood that the electron emitter 1402 can also be parallel with at least one support wire having flexibility and plasticity. Set or twist settings tightly. The support wire may be a metal microfilament such as a wire, an aluminum wire, a copper wire, a gold wire, a molybdenum wire or a silver wire. The diameter and length of the support wire can be selected according to actual needs. Preferably, the support wire has a diameter of from 50 micrometers to 500 micrometers. The support wire can further enhance the self-supporting property of the electron emitter 1402.
本實施例中，以奈米碳管線狀結構為例說明。所述奈米碳管線狀結構為一自支撐結構。所謂“自支撐結構”即該奈米碳管線狀結構無需通過一支撐體支撐，也能保持自身特定的形狀。所述奈米碳管線狀結構可以包括至少一個奈米碳管線。當奈米碳管線狀結構包括複數奈米碳管線時，複數奈米碳管線平行排列組成束狀結構或複數奈米碳管線相互扭轉組成絞線結構。所述奈米碳管線狀結構的直徑為1微米到500微米。本實施例中，所述奈米碳管線狀結構的直徑為20微米。 In this embodiment, a nanocarbon line structure is taken as an example. The nanocarbon line-like structure is a self-supporting structure. The so-called "self-supporting structure" means that the nanocarbon line-like structure can maintain its own specific shape without being supported by a support. The nanocarbon line-like structure may include at least one nanocarbon line. When the nanocarbon line-like structure comprises a plurality of nano carbon pipelines, the plurality of nano carbon pipelines are arranged in parallel to form a bundle structure or the plurality of nanocarbon pipelines are twisted to form a stranded structure. The nanocarbon line-like structure has a diameter of from 1 micrometer to 500 micrometers. In this embodiment, the nanocarbon line-like structure has a diameter of 20 microns.
所述奈米碳管線可以為非扭轉的奈米碳管線或扭轉的奈米碳管線。該非扭轉的奈米碳管線包括複數沿奈米碳管線軸向排列的奈米碳管，即奈米碳管的軸向與奈米碳管線的軸向基本平行。該扭轉的奈米碳管線包括複數繞奈米碳管線軸向螺旋排列的奈米碳管，即奈米碳管的軸向沿奈米碳管線的軸向螺旋延伸。該非扭轉的奈米碳管線與扭轉的奈米碳管線長度不限，直徑為0.5奈米~100微米。該奈米碳管線中的奈米碳管為單壁、雙壁或多壁奈米碳管。該奈米碳管的直徑小於5奈米，長度範圍為10微米~100微米。 The nanocarbon line may be a non-twisted nano carbon line or a twisted nano carbon line. The non-twisted nanocarbon pipeline includes a plurality of carbon nanotubes axially aligned along the nanocarbon pipeline, that is, the axial direction of the carbon nanotubes is substantially parallel to the axial direction of the nanocarbon pipeline. The twisted nanocarbon pipeline comprises a plurality of carbon nanotubes arranged axially helically arranged around the carbon nanotubes, that is, the axial spiral extension of the carbon nanotubes along the axial carbon nanotubes. The non-twisted nano carbon line and the twisted nano carbon line are not limited in length and have a diameter of 0.5 nm to 100 μm. The carbon nanotubes in the nanocarbon pipeline are single-walled, double-walled or multi-walled carbon nanotubes. The carbon nanotubes have a diameter of less than 5 nanometers and a length ranging from 10 micrometers to 100 micrometers.
所述非扭轉的奈米碳管線可以通過直接從奈米碳管陣列中拉 取的方法製備，也可以先從奈米碳管陣列中拉取一奈米碳管膜，再將該奈米碳管膜通過有機溶劑處理收縮成奈米碳管線。所述扭轉的奈米碳管線為採用一機械力將所述奈米碳管膜兩端沿相反方向扭轉獲得。所述扭轉的奈米碳管線也可以通過在拉取非扭轉的奈米碳管線或奈米碳管膜的過程中同時扭轉該非扭轉的奈米碳管線或奈米碳管膜而形成。所述奈米碳管線及其製備方法具體請參見申請人於2002年11月5日申請的，於2008年11月21日公告的第I303239號台灣公告專利“一種奈米碳管繩及其製造方法”，及於於2005年12月16日申請的，於2007年7月1日公開的第TW200724486號台灣公開專利申請“奈米碳管絲及其製作方法”。為節省篇幅，僅引用於此，但上述申請所有技術揭露也應視為本發明申請技術揭露的一部分。 The non-twisted nanocarbon pipeline can be pulled directly from the carbon nanotube array The preparation method can also be carried out by first pulling a carbon nanotube film from the carbon nanotube array, and then shrinking the carbon nanotube film into a nano carbon line by organic solvent treatment. The twisted nanocarbon line is obtained by twisting both ends of the carbon nanotube film in opposite directions by a mechanical force. The twisted nanocarbon line can also be formed by simultaneously twisting the non-twisted nanocarbon line or the carbon nanotube film during the process of pulling the non-twisted nano carbon line or the carbon nanotube film. For details of the nano carbon pipeline and the preparation method thereof, please refer to the Taiwan Patent Publication No. I303239, which was filed on November 5, 2002, which was filed on November 5, 2008. The method, and the Taiwan Patent Application No. TW200724486, which was filed on Dec. 1, 2005, which is hereby incorporated by reference in its entirety in its entirety in In order to save space, only the above is cited, but all the technical disclosures of the above application are also considered as part of the technical disclosure of the present application.
所述對應所述絕緣基板110的每個開孔1102設置至少一電子發射體1402的方法具體包括以下步驟： The method for disposing at least one electron emitter 1402 corresponding to each opening 1102 of the insulating substrate 110 specifically includes the following steps:
(一)，提供一場發射線材供給裝置200用以連續不斷的提供場發射線材1408，所述場發射線材供給裝置200包括一針管202，且該針管202具有一針頭204，將一場發射線材1408穿設於該針管202內，並使該場發射線材1408的一端從針管202的針頭204露出。 (a) providing a launch wire supply device 200 for continuously providing a field emission wire 1408, the field emission wire supply device 200 including a needle 202, and the needle 202 having a needle 204 for wearing a field emission wire 1408 The needle tube 202 is disposed in the needle tube 202, and one end of the field emission wire 1408 is exposed from the needle 204 of the needle tube 202.
所述針管202的內徑大小可以根據所述電子發射體1402的直徑大小選擇，外徑大小可以根據所述開孔1102大小選擇。優選地，所述針管202的內徑大小為電子發射體1402的直徑大 小的5倍至10倍以減小針管202與電子發射體1402之間的摩擦力。所述場發射線材1408可以連續不斷地從針頭204伸出。可以理解，所述場發射線材供給裝置200還可以包括機械手臂(圖未示)，控制電腦(圖未示)等輔助設備以實現自動化連續生產。本實施例中，所述場發射線材供給裝置200為一注射器，且注射器針頭204被磨成平面。所述場發射線材1408為具有柔韌性和自支撐性的，宏觀可操作，且可以用作發射電子。將該場發射線材1408切斷可以得到複數電子發射體1402。本實施例中，所述場發射線材1408為一奈米碳管線狀結構。 The inner diameter of the needle tube 202 can be selected according to the diameter of the electron emitter 1402, and the outer diameter can be selected according to the size of the opening 1102. Preferably, the inner diameter of the needle tube 202 is larger than the diameter of the electron emitter 1402. It is 5 to 10 times smaller to reduce the friction between the needle tube 202 and the electron emitter 1402. The field emission wire 1408 can continuously extend from the needle 204. It can be understood that the field emission wire feeding device 200 may further include a robot arm (not shown), and an auxiliary device such as a computer (not shown) to realize automatic continuous production. In this embodiment, the field emission wire supply device 200 is a syringe, and the syringe needle 204 is ground to a flat surface. The field emission wire 1408 is flexible and self-supporting, macroscopically operable, and can be used to emit electrons. The field emission wire 1408 is severed to obtain a plurality of electron emitters 1402. In this embodiment, the field emission wire 1408 is a nano carbon line structure.
(二)，移動該針管202使該針管202依次***所述絕緣基板110的每個開孔1102中，同時不斷提供場發射線材1408，並使該場發射線材1408的一部分固定於絕緣基板110的第一表面1106，一部分設置於絕緣基板110的開孔1102內。 (2) moving the needle tube 202 such that the needle tube 202 is sequentially inserted into each of the openings 1102 of the insulating substrate 110 while continuously providing the field emission wire 1408 and fixing a portion of the field emission wire 1408 to the insulating substrate 110. The first surface 1106 is partially disposed in the opening 1102 of the insulating substrate 110.
(三)，將該場發射線材1408位於開孔1102內的部分切斷以形成至少一電子發射體1402。 (iii) The portion of the field emission wire 1408 located within the opening 1102 is severed to form at least one electron emitter 1402.
所述將場發射線材1408切斷的方法為機械切割、鐳射掃描、電子束掃描或通電流熔斷或通電流後鐳射輔助定點熔斷。 The method of cutting the field emission wire 1408 is mechanical cutting, laser scanning, electron beam scanning or current-fusing or laser-assisted spot-fitting after current.
如圖2至圖4所示，本實施例中，對應所述絕緣基板110的每個開孔1102設置兩個電子發射體1402，其具體包括以下步驟： As shown in FIG. 2 to FIG. 4, in the embodiment, two electron emitters 1402 are disposed corresponding to each of the openings 1102 of the insulating substrate 110, which specifically includes the following steps:
(A)，提供一固定元件150，將該固定元件150設置於所述 絕緣基板110的第二表面1104一側。 (A) providing a fixing member 150, the fixing member 150 being disposed in the The second surface 1104 side of the insulating substrate 110.
所述固定元件150用來固定場發射線材1408，以使場發射線材1408設置於開孔1102內。所述固定元件150可以為一黏性片狀體或掛鈎等任何能夠固定該場發射線材1408的元件。所述黏性片狀體可以為膠帶，具有黏性的塑膠薄膜或塗有黏結劑的玻璃板等。當固定元件150為掛鈎時，可以將複數掛鈎呈行列式設置於一支撐體上，且每個掛鈎與一開孔1102對應設置。當所述固定元件150為掛鈎時，該場發射線材1408可以被掛鈎掛住，從而避免黏結劑對場發射線材1408造成污染。本實施例中，所述固定元件150為一具有黏性的塑膠薄膜。所述固定元件150具有黏性的表面與第二表面1104貼合併將絕緣基板110的開孔1102覆蓋。 The fixing element 150 is used to secure the field emission wire 1408 such that the field emission wire 1408 is disposed within the opening 1102. The fixing member 150 can be any member capable of fixing the field emission wire 1408, such as a viscous sheet or hook. The viscous sheet-like body may be an adhesive tape, a viscous plastic film or a glass plate coated with a binder. When the fixing component 150 is a hook, the plurality of hooks can be arranged in a row on a support body, and each hook is disposed corresponding to an opening 1102. When the fixing member 150 is a hook, the field emission wire 1408 can be hooked to avoid contamination of the field emission wire 1408 by the bonding agent. In this embodiment, the fixing component 150 is a viscous plastic film. The viscous surface of the fixing member 150 is attached to the second surface 1104 to cover the opening 1102 of the insulating substrate 110.
(B)，將所述場發射線材1408從所述針頭204露出的一端固定於所述絕緣基板110的第一表面1106。 (B), one end of the field emission wire 1408 exposed from the needle 204 is fixed to the first surface 1106 of the insulating substrate 110.
本實施例中，所述場發射線材1408從針頭204露出的一端通過黏結劑固定於第一表面1106。可以理解，本實施例也可以通過一輔助固定件(圖未示)將所述場發射線材1408從針頭204露出的一端固定於該絕緣基板110的第一表面1106。 In this embodiment, one end of the field emission wire 1408 exposed from the needle 204 is fixed to the first surface 1106 by an adhesive. It can be understood that the embodiment may also fix one end of the field emission wire 1408 exposed from the needle 204 to the first surface 1106 of the insulating substrate 110 through an auxiliary fixing member (not shown).
(C)，沿平行於第一表面1106的方向移動所述針管202至一開孔1102處，並將該針管***該開孔1102內，從而帶動該場發射線材1408先沿平行於第一表面1106的方向延伸再向該開孔1102內延伸，並使場發射線材1408被所述固定元件150固 定。 (C) moving the needle tube 202 to an opening 1102 in a direction parallel to the first surface 1106, and inserting the needle tube into the opening 1102, thereby driving the field emission wire 1408 first along the first surface The direction of 1106 extends and extends into the opening 1102, and the field emission wire 1408 is fixed by the fixing component 150. set.
本實施例中，所述固定元件150為黏性片狀體，該場發射線材1408可以黏結於黏性片狀體表面。 In this embodiment, the fixing component 150 is a viscous sheet-like body, and the field emission wire 1408 can be bonded to the surface of the viscous sheet.
(D)，將該針管202從該開孔1102內拔出，並沿平行於第一表面1106的方向移動，從而帶動該場發射線材1408先向該開孔1102外延伸再沿平行於第一表面1106的方向延伸，並將該場發射線材1408平行於第一表面1106的部分固定於第一表面1106，此時該場發射線材1408位於該開孔1102內的部分形成一V字形。 (D), the needle tube 202 is pulled out from the opening 1102 and moved in a direction parallel to the first surface 1106, thereby driving the field emission wire 1408 to extend outwardly from the opening 1102 and then parallel to the first The direction of the surface 1106 extends and the portion of the field emission wire 1408 parallel to the first surface 1106 is secured to the first surface 1106, at which point the portion of the field emission wire 1408 located within the opening 1102 forms a V-shape.
可以理解，由於場發射線材1408被固定元件150固定，通過將場發射線材1408繃緊可以使該場發射線材1408平行於所述絕緣基板110的第一表面1106的部分固定於第一表面1106。本實施例中，優選地，所述V字形場發射線材1408的V字形尖端位於該開孔1102的中心軸上。 It will be appreciated that since the field emission wire 1408 is secured by the fixation element 150, the portion of the field emission wire 1408 that is parallel to the first surface 1106 of the insulative substrate 110 can be secured to the first surface 1106 by tightening the field emission wire 1408. In this embodiment, preferably, the V-shaped tip of the V-shaped field emission wire 1408 is located on the central axis of the opening 1102.
(E)，重複上述步驟，以使所述場發射線材1408對應絕緣基板110的每個開孔1102設置，且該場發射線材1408位於每個開孔1102內的部分都呈V字型。 (E), the above steps are repeated such that the field emission wires 1408 are disposed corresponding to each of the openings 1102 of the insulating substrate 110, and portions of the field emission wires 1408 located in each of the openings 1102 are V-shaped.
可以理解，本實施例中還可以連續移動針管202，使得所述場發射線材1408對應絕緣基板110的每個開孔1102設置，且該場發射線材1408位於每個開孔1102內的部分都呈V字型。 It can be understood that the needle tube 202 can be continuously moved in the embodiment, so that the field emission wire 1408 is disposed corresponding to each opening 1102 of the insulating substrate 110, and the portion of the field emission wire 1408 located in each opening 1102 is V shape.
進一步，本實施例還可以包括一將所述位於相鄰兩個開孔1102之間的場發射線材1408切斷的步驟。本實施例中，採用 鐳射沿著絕緣基板110的開孔1102排列的橫向和縱向分別進行多次掃描以將所述位於相鄰兩個開孔1102之間的場發射線材1408切斷從而形成複數電子發射體1402。 Further, the embodiment may further include a step of cutting the field emission wire 1408 located between the adjacent two openings 1102. In this embodiment, The laser is scanned a plurality of times in the lateral direction and the longitudinal direction of the arrangement of the openings 1102 of the insulating substrate 110 to cut the field emission wires 1408 between the adjacent two openings 1102 to form a plurality of electron emitters 1402.
可以理解，本實施例中也可以僅將位於相鄰兩排開孔1102之間的場發射線材1408切斷。此時，在後續步驟中同一排開孔1102應對應同一陰極電極120設置。 It can be understood that in the embodiment, only the field emission wires 1408 located between the adjacent two rows of openings 1102 can be cut. At this time, the same row of openings 1102 should be disposed corresponding to the same cathode electrode 120 in the subsequent steps.
(F)，去除所述固定元件150，將該場發射線材1408位於每一開孔1102內的部分從V字形的尖端切斷。 (F), the fixing member 150 is removed, and a portion of the field emission wire 1408 located in each of the openings 1102 is cut from the tip end of the V-shape.
本實施例中，採用鐳射掃描將場發射線材1408切斷以形成兩個場發射尖端1406。可以理解，所述將場發射線材1408位於每一開孔1102內的部分從V字形的尖端切斷的步驟之後，還可以進一步包括一採用鐳射對該場發射尖端1406進行處理，以除去該場發射尖端1406表面的黏結劑等雜質的步驟。通過除去場發射尖端1406表面的黏結劑等雜質可以進一步降低場發射尖端1406的逸出功。 In this embodiment, the field emission wires 1408 are severed by laser scanning to form two field emission tips 1406. It can be understood that after the step of cutting the portion of the field emission wire 1408 located in each opening 1102 from the tip of the V-shape, the method further includes: processing the field emission tip 1406 by laser to remove the field. A step of emitting impurities such as a binder on the surface of the tip 1406. The work function of the field emission tip 1406 can be further reduced by removing impurities such as a binder on the surface of the field emission tip 1406.
請參見圖4，本實施例在每個開孔1102內設置兩個電子發射體1402。每個電子發射體1402的固定端1404固定於絕緣基板110的第一表面1106，場發射尖端1406由陰極電極120向開孔1102的開口中心位置傾斜延伸，且兩個電子發射體1402的場發射尖端1406間隔設置。可以理解，如果僅將位於相鄰兩排開孔1102之間的場發射線材1408切斷，位於同一排開孔1102內的部分電子發射體1402的固定端1404也可以連在一起 。 Referring to FIG. 4, in the embodiment, two electron emitters 1402 are disposed in each of the openings 1102. The fixed end 1404 of each electron emitter 1402 is fixed to the first surface 1106 of the insulating substrate 110, and the field emission tip 1406 is obliquely extended from the cathode electrode 120 toward the opening center position of the opening 1102, and the field emission of the two electron emitters 1402 The tips 1406 are spaced apart. It can be understood that if only the field emission wires 1408 located between the adjacent rows of openings 1102 are cut, the fixed ends 1404 of the partial electron emitters 1402 located in the same row of openings 1102 can also be connected together. .
步驟三，在所述絕緣基板110的第一表面1106上形成複數條狀陰極電極120，該複數陰極電極120將所述電子發射體1402的固定端1404固定於所述絕緣基板110與所述陰極電極120之間。 Step 3, forming a plurality of strip cathode electrodes 120 on the first surface 1106 of the insulating substrate 110, the plurality of cathode electrodes 120 fixing the fixed ends 1404 of the electron emitters 1402 to the insulating substrate 110 and the cathode Between the electrodes 120.
所述複數陰極電極120平行且間隔設置，且每個陰極電極120對應一排開孔1102設置。所述電子發射體1402與陰極電極120接觸從而實現電連接。所述陰極電極120可以為金屬片、氧化銦錫薄膜或導電漿料層等。所述金屬可以為銅、鋁、金、銀等。所述導電漿料包括金屬粉、低熔點玻璃粉和黏結劑。其中，該金屬粉優選為銀粉，該黏結劑優選為松油醇或乙基纖維素。該導電漿料中，金屬粉的重量比為50~90%，低熔點玻璃粉的重量比為2~10%，黏結劑的重量比為10~40%。所述陰極電極120可以通過絲網列印、電鍍，化學氣相沈積、磁控濺射、熱沈積等方法製備，也可以將提前製備好的金屬陰極電極120直接固定於所述絕緣基板110的表面。 The plurality of cathode electrodes 120 are arranged in parallel and spaced apart, and each cathode electrode 120 is disposed corresponding to a row of openings 1102. The electron emitter 1402 is in contact with the cathode electrode 120 to achieve electrical connection. The cathode electrode 120 may be a metal piece, an indium tin oxide film or a conductive paste layer or the like. The metal may be copper, aluminum, gold, silver, or the like. The conductive paste includes metal powder, low-melting glass frit, and a binder. Among them, the metal powder is preferably silver powder, and the binder is preferably terpineol or ethyl cellulose. In the conductive paste, the weight ratio of the metal powder is 50 to 90%, the weight ratio of the low melting point glass powder is 2 to 10%, and the weight ratio of the binder is 10 to 40%. The cathode electrode 120 may be prepared by screen printing, electroplating, chemical vapor deposition, magnetron sputtering, thermal deposition, or the like, or the metal cathode electrode 120 prepared in advance may be directly fixed to the insulating substrate 110. surface.
本實施例中，將複數條形銅片整個表面塗覆黏結劑後間隔且平行固定於所述絕緣基板110的第一表面1106。如圖5所示，所述條形銅片將絕緣基板110的開孔1102蓋住，且將電子發射體1402的固定端1404固定於陰極電極120與絕緣基板110之間。 In this embodiment, the entire surface of the plurality of strips of copper is coated with a bonding agent, and is fixed to the first surface 1106 of the insulating substrate 110 at intervals and in parallel. As shown in FIG. 5, the strip-shaped copper sheet covers the opening 1102 of the insulating substrate 110, and the fixed end 1404 of the electron emitter 1402 is fixed between the cathode electrode 120 and the insulating substrate 110.
請參見圖6，進一步，本實施例還可以包括一在所述絕緣基 板110的第二表面1104形成複數條狀柵極電極130的步驟，以使該場發射裝置100可以應用於三極型顯示器。 Referring to FIG. 6, further, the embodiment may further include an insulating base. The second surface 1104 of the board 110 forms a plurality of strip gate electrodes 130 such that the field emission device 100 can be applied to a three-pole display.
如圖7所示，所述複數柵極電極130平行設置，且與陰極電極120異面垂直設置。由於陰極電極120與柵極電極130異面垂直設置，故，可以通過控制陰極電極120與柵極電極130來控制每個開孔1102中的電子發射體1402進行獨立發射電子。 As shown in FIG. 7, the plurality of gate electrodes 130 are disposed in parallel and disposed perpendicularly to the cathode electrode 120. Since the cathode electrode 120 is disposed perpendicularly to the gate electrode 130, the electron emitters 1402 in each of the openings 1102 can be controlled to independently emit electrons by controlling the cathode electrode 120 and the gate electrode 130.
所述柵極電極130可以為金屬片、氧化銦錫薄膜或導電漿料層等。所述金屬可以為銅、鋁、金、銀等。所述導電漿料包括金屬粉、低熔點玻璃粉和黏結劑。所述柵極電極130可以通過絲網列印、電鍍，化學氣相沈積、磁控濺射、熱沈積等方法製備，也可以將提前製備好的金屬柵極電極130直接固定於所述絕緣基板110的第二表面1104。 The gate electrode 130 may be a metal piece, an indium tin oxide film, a conductive paste layer, or the like. The metal may be copper, aluminum, gold, silver, or the like. The conductive paste includes metal powder, low-melting glass frit, and a binder. The gate electrode 130 may be prepared by screen printing, electroplating, chemical vapor deposition, magnetron sputtering, thermal deposition, or the like, or the metal gate electrode 130 prepared in advance may be directly fixed to the insulating substrate. The second surface 1104 of the 110.
所述柵極電極130可以為一導電條，具有一排柵孔的導電片或柵網。本實施例中，所述柵極電極130為一具有一排柵孔(圖未標)的導電片。所述柵孔為通孔，且柵孔的直徑為1微米至1000微米。所述柵極電極130的柵孔與絕緣基板110的開孔1102相對應設置，以使電子發射體1402發射的電子可以通過該柵孔射出。所述柵極電極130為導電漿料列印的條形電極，且柵孔的直徑為500微米。 The gate electrode 130 can be a conductive strip, a conductive strip or grid having a row of gate holes. In this embodiment, the gate electrode 130 is a conductive sheet having a row of gate holes (not labeled). The gate hole is a through hole, and the diameter of the gate hole is 1 micrometer to 1000 micrometers. The gate hole of the gate electrode 130 is disposed corresponding to the opening 1102 of the insulating substrate 110 such that electrons emitted from the electron emitter 1402 can be emitted through the gate hole. The gate electrode 130 is a strip electrode printed by a conductive paste, and the diameter of the gate hole is 500 micrometers.
請參閱圖7至圖8，為本發明實施例製備的場發射裝置100，該場發射裝置100包括一絕緣基板110、複數陰極電極120、複數柵極電極130及複數電子發射單元140。 Referring to FIG. 7 to FIG. 8 , a field emission device 100 is prepared according to an embodiment of the present invention. The field emission device 100 includes an insulating substrate 110 , a plurality of cathode electrodes 120 , a plurality of gate electrodes 130 , and a plurality of electron emission units 140 .
其中，所述絕緣基板110上形成有複數開孔1102，且每個電子發射單元140與一開孔1102對應設置。所述絕緣基板具有第一表面1106及與該第一表面1106相對的第二表面1104。所述複數柵極電極130設置於絕緣基板110的第二表面1104。所述複數陰極電極120設置於絕緣基板110的第一表面1106。所述陰極電極120與柵極電極130均為條形電極。所述複數陰極電極120平行設置，所述複數柵極電極130平行設置，且陰極電極120與柵極電極130異面垂直設置。所述電子發射單元140與陰極電極120電連接。由於陰極電極120與柵極電極130異面垂直設置，故，可以通過控制陰極電極120與柵極電極130來控制每個電子發射單元140進行獨立發射電子。 A plurality of openings 1102 are formed on the insulating substrate 110, and each of the electron emitting units 140 is disposed corresponding to an opening 1102. The insulating substrate has a first surface 1106 and a second surface 1104 opposite the first surface 1106. The plurality of gate electrodes 130 are disposed on the second surface 1104 of the insulating substrate 110. The plurality of cathode electrodes 120 are disposed on the first surface 1106 of the insulating substrate 110. The cathode electrode 120 and the gate electrode 130 are both strip electrodes. The plurality of cathode electrodes 120 are disposed in parallel, the plurality of gate electrodes 130 are disposed in parallel, and the cathode electrodes 120 are disposed perpendicular to the surface of the gate electrodes 130. The electron emission unit 140 is electrically connected to the cathode electrode 120. Since the cathode electrode 120 is disposed perpendicular to the surface of the gate electrode 130, each of the electron-emitting units 140 can be controlled to independently emit electrons by controlling the cathode electrode 120 and the gate electrode 130.
所述電子發射單元140包括兩個電子發射體1402，且每個電子發射體1402的固定端1404固定於絕緣基板110與陰極電極120之間。所述兩個電子發射體1402的場發射尖端1406由陰極電極120向開孔1102的開口中心位置傾斜延伸，且兩個電子發射體1402的場發射尖端1406的間隔設置。 The electron emission unit 140 includes two electron emitters 1402, and a fixed end 1404 of each electron emitter 1402 is fixed between the insulating substrate 110 and the cathode electrode 120. The field emission tips 1406 of the two electron emitters 1402 are obliquely extended from the cathode electrode 120 toward the opening center position of the opening 1102, and the field emission tips 1406 of the two electron emitters 1402 are spaced apart.
請參見圖9，本發明第二實施例提供一種場發射裝置100的製備方法。本發明第二實施例提供的場發射裝置的製備方法與本發明第一實施例提供一種場發射裝置的製備方法基本相同，其區別在於：對應所述絕緣基板110的每個開孔1102僅設置一個電子發射體1402。 Referring to FIG. 9, a second embodiment of the present invention provides a method of fabricating a field emission device 100. The method for fabricating the field emission device according to the second embodiment of the present invention is substantially the same as the method for fabricating the field emission device according to the first embodiment of the present invention. The difference is that each opening 1102 corresponding to the insulating substrate 110 is only set. An electron emitter 1402.
本實施例中對應所述絕緣基板110的每個開孔1102設置電子發射體1402的方法包括以下步驟： The method for disposing the electron emitter 1402 corresponding to each opening 1102 of the insulating substrate 110 in this embodiment includes the following steps:
(一)，提供一場發射線材供給裝置200用以連續不斷的提供場發射線材1408，所述場發射線材供給裝置200包括一針管202，且該針管202具有一針頭204，將一場發射線材1408穿設於該針管202內，並使該場發射線材1408的一端從針管202的針頭204露出。 (a) providing a launch wire supply device 200 for continuously providing a field emission wire 1408, the field emission wire supply device 200 including a needle 202, and the needle 202 having a needle 204 for wearing a field emission wire 1408 The needle tube 202 is disposed in the needle tube 202, and one end of the field emission wire 1408 is exposed from the needle 204 of the needle tube 202.
(二)，將所述場發射線材1408從所述針頭204露出的一端固定於所述絕緣基板110的第一表面1106，然後移動所述針管202，從而帶動該場發射線材1408向該開孔1102內延伸。 (2) fixing one end of the field emission wire 1408 exposed from the needle 204 to the first surface 1106 of the insulating substrate 110, and then moving the needle tube 202 to drive the field emission wire 1408 to the opening Extend within 1102.
(三)，將該場發射線材1408位於開孔1102內的部分切斷以形成至少一電子發射體1402。 (iii) The portion of the field emission wire 1408 located within the opening 1102 is severed to form at least one electron emitter 1402.
(四)，重複上述步驟以在每個開孔1102內設置一電子發射體1402。 (d), the above steps are repeated to provide an electron emitter 1402 in each of the openings 1102.
如圖9所示，本實施例中給場發射線材1408通入直流電後在鐳射300的輔助作用下定點熔斷。由於該場發射線材1408在鐳射300的輔助作用下定點熔斷，熔斷的瞬間碳熔化產生的毛細力將這些奈米碳管緊緊束縛在一起。使該場發射線材1408具有很好的機械性能和電性能，可以有效提高該場發射線材1408的場發射電子的能力。該熔斷後的場發射線材1408中奈米碳管具有更少的壁數和更細的直徑，其壁數少於5層一般為2層或者3層，其直徑通常小於5奈米。而直接生長的超順排奈米碳管陣列的奈米碳管的層數多於5層，直徑為15奈米左右。奈米碳管壁數減少的原因為由於在鐳射的輔助作 用下，不斷升高的溫度使一些富含缺陷的石墨層崩潰，碳元素蒸發。而直徑的減少的原因為被加熱至高溫的奈米碳管受一定的拉力作用發生塑性形變，變長變細。該電子發射體1402中的場發射尖端1406的奈米碳管與其他遠離該場發射尖端1406的奈米碳管緊密結合，使得該場發射尖端1406的奈米碳管在場發射過程中產生的熱量可以有效地被傳導出去，並且可以承受較強的電場力。 As shown in FIG. 9, in the present embodiment, the field emission wire 1408 is DC-powered and then fixedly blown under the aid of the laser 300. Since the field emission wire 1408 is fixedly blown by the assistance of the laser 300, the capillary force generated by the melting of the carbon at the instant of the fuse binds the carbon nanotubes tightly together. The field emission wire 1408 has good mechanical and electrical properties, and can effectively improve the field emission electrons of the field emission wire 1408. The carbon nanotubes in the blown field emission wire 1408 have fewer wall numbers and finer diameters, and the number of walls is less than 5 layers, typically 2 or 3 layers, and the diameter is usually less than 5 nm. The directly grown super-sequential carbon nanotube array has more than 5 layers of carbon nanotubes and a diameter of about 15 nm. The reason for the decrease in the number of carbon nanotube walls is due to the auxiliary work in laser Underneath, the rising temperature causes some graphite layers rich in defects to collapse and carbon to evaporate. The reason for the decrease in diameter is that the carbon nanotubes heated to a high temperature are plastically deformed by a certain tensile force, and become longer and thinner. The carbon nanotubes of the field emission tip 1406 in the electron emitter 1402 are tightly coupled with other carbon nanotubes remote from the field emission tip 1406 such that the carbon nanotubes of the field emission tip 1406 are generated during field emission. Heat can be effectively conducted out and can withstand strong electric field forces.
請參閱圖10至圖15，本發明第三實施例提供一種場發射裝置400的製備方法。本發明第三實施例提供的場發射裝置400的製備方法與本發明第一實施例提供的場發射裝置100的製備方法基本相同，其區別在於：本實施例先在絕緣基板410的第二表面4104上形成複數條狀柵極電極430，後設置電子發射體4402，最後形成陰極電極420。 Referring to FIG. 10 to FIG. 15, a third embodiment of the present invention provides a method of fabricating a field emission device 400. The method for fabricating the field emission device 400 according to the third embodiment of the present invention is substantially the same as the method for fabricating the field emission device 100 according to the first embodiment of the present invention. The difference is that the embodiment is first on the second surface of the insulating substrate 410. A plurality of strip-shaped gate electrodes 430 are formed on the 4104, an electron emitter 4402 is disposed, and a cathode electrode 420 is finally formed.
本實施例提供的場發射裝置400的製備方法具體包括以下步驟： The method for preparing the field emission device 400 provided in this embodiment specifically includes the following steps:
步驟一，提供一絕緣基板410，該絕緣基板410包括一第一表面4106及與該第一表面4106相對的第二表面4104，且該絕緣基板410具有複數貫穿該第一表面4106和第二表面4104的開孔4102。 Step 1 , an insulating substrate 410 is provided. The insulating substrate 410 includes a first surface 4106 and a second surface 4104 opposite to the first surface 4106 , and the insulating substrate 410 has a plurality of first surface 4106 and a second surface. The opening 4102 of the 4104.
步驟二，在所述絕緣基板410的第二表面4104上形成複數條狀柵極電極430。 In step two, a plurality of strip-shaped gate electrodes 430 are formed on the second surface 4104 of the insulating substrate 410.
步驟三，對應所述絕緣基板410的每個開孔4102設置至少一 電子發射體4402，所述至少一電子發射體4402包括一固定端4404及一與該固定端4404相連的場發射尖端4406，且該固定端4404固定於所述絕緣基板410的第一表面4106，該場發射尖端4406由固定端4404向開孔4102內延伸。 Step 3, at least one is provided corresponding to each opening 4102 of the insulating substrate 410. An electron emitter 4402, the at least one electron emitter 4402 includes a fixed end 4404 and a field emission tip 4406 connected to the fixed end 4404, and the fixed end 4404 is fixed to the first surface 4106 of the insulating substrate 410. The field launch tip 4406 extends from the fixed end 4404 into the opening 4102.
如圖13至圖15所示，本實施例中，對應所述絕緣基板410的每個開孔4102設置兩個電子發射體4402，其具體包括以下步驟： As shown in FIG. 13 to FIG. 15 , in the embodiment, two electron emitters 4402 are disposed corresponding to each of the openings 4102 of the insulating substrate 410, which specifically includes the following steps:
(A)，提供一固定元件450，將該固定元件450設置於所述柵極電極430一側。 (A), a fixing member 450 is provided, which is disposed on the side of the gate electrode 430.
(B)，將所述場發射線材4408從一場發射線材供給裝置500的針頭504露出的一端固定於所述絕緣基板410的第一表面4106； (B), the end of the field emission wire 4408 exposed from the needle 504 of a field of the wire feeding device 500 is fixed to the first surface 4106 of the insulating substrate 410;
(C)，沿平行於第一表面4106的方向移動所述針管502至一開孔4102處，並將該針管***該開孔4102內，從而帶動該場發射線材4408先沿平行於第一表面4106的方向延伸再向該開孔4102內延伸，並使場發射線材4408被所述固定元件450固定。 (C) moving the needle tube 502 to an opening 4102 in a direction parallel to the first surface 4106, and inserting the needle tube into the opening 4102, thereby driving the field emission wire 4408 first along the first surface The direction extension of 4106 extends into the opening 4102 and the field emission wire 4408 is secured by the securing element 450.
(D)，將該針管502從該開孔4102內拔出，並沿平行於第一表面4106的方向移動，從而帶動該場發射線材4408先向該開孔4102外延伸再沿平行於第一表面4106的方向延伸，並將該場發射線材4408平行於第一表面4106的部分固定於第一表面4106，此時該場發射線材4408位於該開孔4102內的部分形成 一V字形。 (D), the needle tube 502 is pulled out from the opening 4102 and moved in a direction parallel to the first surface 4106, thereby driving the field emission wire 4408 to extend outwardly from the opening 4102 and then parallel to the first The direction of the surface 4106 extends, and the portion of the field emission wire 4408 parallel to the first surface 4106 is fixed to the first surface 4106, at which time the portion of the field emission wire 4408 located within the opening 4102 is formed. A V shape.
(E)，重複上述步驟，以使所述場發射線材4408對應絕緣基板410的每個開孔4102設置，且該場發射線材4408位於每個開孔4102內的部分都呈V字型。 (E), the above steps are repeated such that the field emission wires 4408 are disposed corresponding to each of the openings 4102 of the insulating substrate 410, and portions of the field emission wires 4408 located in each of the openings 4102 are V-shaped.
(F)，去除所述固定元件450，將該場發射線材4408位於每一開孔4102內的部分從V字形的尖端切斷。 (F), the fixing member 450 is removed, and a portion of the field emission wire 4408 located in each of the openings 4102 is cut from the tip end of the V-shape.
可以理解，由於本實施例中先設置柵極電極430，再設置場發射線材4408，然後將場發射線材4408位於每一開孔4102內的部分切斷以形成電子發射體4402，故，可以避免製備柵極電極430時，尤其為沈積或列印柵極電極430時，對場發射尖端4406造成污染。另，通過選擇場發射線材4408被切斷的位置還可以很容易地控制電子發射體4402的場發射尖端4406與柵極電極430基本保持在同一高度。所述場發射尖端4406與柵極電極430之間的高度差小於10微米。所述高度差指場發射尖端4406至第一表面4106的垂直距離與所述柵極電極430至第一表面4106的垂直距離的差的絕對值。優選地，所述場發射尖端4406與柵極電極430之間的高度差小於5微米。由於場發射尖端4406與柵極電極430基本保持在同一高度，故，柵極電極430的控制電壓可以降低至30伏特~100伏特。本實施例中，所述場發射尖端4406與柵極電極430之間的高度差小於2微米。所述柵極電極430的控制電壓為70伏特~80伏特。 It can be understood that, since the gate electrode 430 is first disposed in the embodiment, the field emission wire 4408 is further disposed, and then the portion of the field emission wire 4408 located in each opening 4102 is cut to form the electron emitter 4402, thereby avoiding When the gate electrode 430 is prepared, especially when the gate electrode 430 is deposited or printed, the field emission tip 4406 is contaminated. In addition, the field emission tip 4406 of the electron emitter 4402 can be easily controlled to remain substantially at the same height as the gate electrode 430 by selecting the position at which the field emission wire 4408 is severed. The height difference between the field emission tip 4406 and the gate electrode 430 is less than 10 microns. The height difference refers to the absolute value of the difference between the vertical distance of the field emission tip 4406 to the first surface 4106 and the vertical distance of the gate electrode 430 to the first surface 4106. Preferably, the height difference between the field emission tip 4406 and the gate electrode 430 is less than 5 microns. Since the field emission tip 4406 is substantially at the same height as the gate electrode 430, the control voltage of the gate electrode 430 can be reduced to 30 volts to 100 volts. In this embodiment, the height difference between the field emission tip 4406 and the gate electrode 430 is less than 2 microns. The gate electrode 430 has a control voltage of 70 volts to 80 volts.
步驟四，在所述絕緣基板410的第一表面4106上形成複數條狀陰極電極420，該複數陰極電極420將所述電子發射體4402的固定端4404固定於所述絕緣基板410與所述陰極電極420之間。 Step 4, forming a plurality of strip cathode electrodes 420 on the first surface 4106 of the insulating substrate 410, the plurality of cathode electrodes 420 fixing the fixed ends 4404 of the electron emitters 4402 to the insulating substrate 410 and the cathode Between the electrodes 420.
所述陰極電極420與柵極電極430異面垂直設置，以通過控制陰極電極420與柵極電極430來控制每個開孔4102中的電子發射體4402進行獨立發射電子。 The cathode electrode 420 is disposed perpendicularly to the gate electrode 430 to control the electron emitters 4402 in each of the openings 4102 to independently emit electrons by controlling the cathode electrode 420 and the gate electrode 430.
由於採用本發明提供的方法製備的場發射裝置中的電子發射體的一部分固定於絕緣基板與陰極電極之間，故，該電子發射體被牢固地固定在絕緣基板與陰極電極之間，可以承受較大的電場力而不會被電場力拔出，從而使該電子發射體具有更強的電子發射能力和更長的使用壽命。另，通過將場發射尖端與柵極電極之間的高度差控制在10微米以內，可以使柵極電極的控制電壓降低至30伏特~100伏特。 Since a part of the electron emitter in the field emission device prepared by the method provided by the present invention is fixed between the insulating substrate and the cathode electrode, the electron emitter is firmly fixed between the insulating substrate and the cathode electrode, and can withstand The large electric field force is not pulled out by the electric field force, so that the electron emitter has stronger electron emission capability and a longer service life. In addition, by controlling the height difference between the field emission tip and the gate electrode to within 10 microns, the control voltage of the gate electrode can be lowered to 30 volts to 100 volts.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
110‧‧‧絕緣基板 110‧‧‧Insert substrate
1102‧‧‧開孔 1102‧‧‧Opening
1104‧‧‧第二表面 1104‧‧‧ second surface
1106‧‧‧第一表面 1106‧‧‧ first surface
1408‧‧‧場發射線材 1408‧‧‧ field emission wire
150‧‧‧固定元件 150‧‧‧Fixed components
200‧‧‧場發射線材供給裝置 200‧‧ ‧ field emission wire supply device
202‧‧‧針管 202‧‧‧ needle
204‧‧‧針頭 204‧‧‧ needle
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| US20040209385A1 (en) * | 2003-03-27 | 2004-10-21 | Liang Liu | Method for making carbon nanotube-based field emission device |
| TW200539225A (en) * | 2004-05-28 | 2005-12-01 | Hon Hai Prec Ind Co Ltd | Carbon nanotube field emission device and method for making the same |
| US20060175950A1 (en) * | 2002-04-11 | 2006-08-10 | Hiroyuki Itou | Field electron emission film, field electron emission electrode and field electron emission display |
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| US20060175950A1 (en) * | 2002-04-11 | 2006-08-10 | Hiroyuki Itou | Field electron emission film, field electron emission electrode and field electron emission display |
| US20040209385A1 (en) * | 2003-03-27 | 2004-10-21 | Liang Liu | Method for making carbon nanotube-based field emission device |
| TW200539225A (en) * | 2004-05-28 | 2005-12-01 | Hon Hai Prec Ind Co Ltd | Carbon nanotube field emission device and method for making the same |
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