TWI412104B - 用以改善效能與提升可靠度之混成內連線結構 - Google Patents
用以改善效能與提升可靠度之混成內連線結構 Download PDFInfo
- Publication number
- TWI412104B TWI412104B TW097101696A TW97101696A TWI412104B TW I412104 B TWI412104 B TW I412104B TW 097101696 A TW097101696 A TW 097101696A TW 97101696 A TW97101696 A TW 97101696A TW I412104 B TWI412104 B TW I412104B
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- Prior art keywords
- dielectric
- interconnect structure
- dielectric material
- conductor
- barrier layer
- Prior art date
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- 239000003989 dielectric material Substances 0.000 claims abstract description 138
- 239000004020 conductor Substances 0.000 claims abstract description 105
- 230000004888 barrier function Effects 0.000 claims abstract description 60
- 238000009792 diffusion process Methods 0.000 claims abstract description 49
- 125000006850 spacer group Chemical group 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 48
- 229910052739 hydrogen Inorganic materials 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 20
- 229910052799 carbon Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 19
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 17
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 238000005240 physical vapour deposition Methods 0.000 claims description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- 229920001187 thermosetting polymer Polymers 0.000 claims description 10
- 229910052684 Cerium Inorganic materials 0.000 claims description 9
- 125000004429 atom Chemical group 0.000 claims description 9
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 238000000224 chemical solution deposition Methods 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229920000090 poly(aryl ether) Polymers 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 4
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229920000412 polyarylene Polymers 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims 3
- 239000010955 niobium Substances 0.000 claims 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 3
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 125000005702 oxyalkylene group Chemical group 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000009977 dual effect Effects 0.000 abstract 1
- 238000004886 process control Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 14
- 238000005137 deposition process Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 3
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- AJXBBNUQVRZRCZ-UHFFFAOYSA-N azanylidyneyttrium Chemical compound [Y]#N AJXBBNUQVRZRCZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- OUFLLVQXSGGKOV-UHFFFAOYSA-N copper ruthenium Chemical compound [Cu].[Ru].[Ru].[Ru] OUFLLVQXSGGKOV-UHFFFAOYSA-N 0.000 description 1
- 101150089047 cutA gene Proteins 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
- H01L23/53223—Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
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- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
- H01L23/53266—Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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Description
本發明是關於半導體結構及其製造方法。更明確地,本發明是關於展現較佳效能與可靠度的混成內連線結構。
半導體元件一般包括複數個在半導體基材上組成積體電路(IC)的電路。複雜的傳訊網絡通常按路線連接基材表面的電路元件。為有效安排整個裝置的訊號線路,需形成多階級或多層結構,例如單嵌或雙嵌接線結構。接線結構一般包括銅(Cu),因相較於鋁(Al)系內連線,Cu內連線提供複雜半導體晶片上之大量電晶體更快的傳訊速度。
在典型的內連線中,金屬通孔(via)垂直穿過半導體基材,而金屬線則平行橫越半導體基材。另外,將金屬線和金屬通孔(如,傳導特徵)埋設在介電常數(k)小於4.0的介電材料中,可提高現今IC產品晶片的傳訊速度及減少相鄰金屬線的雜訊(已知為「串音」)。
即,為減緩電路延遲內連線部分,密實之低k介電材料已取代介電常數約為4.0或以上之傳統介電材料(如二氧化矽);低k介電材料的介電常數為小於4.0,較佳為小於3.5。應注意此申請案所提之介電常數皆相應真空而定。為進一步改善先進裝置的效能,尚需降低介電電容。
以多孔性低k介電材料代替密實低k介電材料可改善電容問題。然儘管改善了電容問題,多孔性低k介電材料
的機械性質係差於密實介電材料。此外,結合多孔性低k介電材料與其他模組製程對目前內連線製程而言仍是一大挑戰。
例如,傳統化學機械研磨(CMP)製程難以平坦化低機械模數之多孔性介電質,而傳統物理氣相沉積(PVD)擴散阻障沉積技術無法適當覆蓋多孔性低k介電材料的表面。即,傳統PVD製程會於多孔性低k介電材料表面形成不連續的PVD襯層。應注意若埋置於多孔性低k介電材料內之傳導特徵附近有不連續的PVD襯層,將嚴重影響電路的可靠度。
話說密實低k介電材料,本申請人已發現密實之低k介電材料與含氧化物之硬罩材料的蝕刻速率不同,如此將造成如第1A圖所示的底切輪廓。某些多孔性低k介電材料也有類似的情形。明確地說,第1A圖局部繪示習知內連線結構10,包括下內連線層12A和上內連線層12B,二者由介電覆蓋層20隔開。下內連線層12A包括第一介電材料14A,其內含導體特徵(導體材料18A)。擴散阻障層16A隔開導體材料18A與第一介電材料14A。介電覆蓋層20上為上內連線層12B,其在先前技術中包括圖案化的密實低k介電材料14B和圖案化的含氧化物之硬罩22,硬罩22位於低k介電材料14B的表面。底切區標示成第1A圖的元件符號24。
底切輪廓將導致導體材料不易填充至最終內連線結構,因而在擴散阻障層與內連線導體材料間留下孔隙
(void)。此可清楚見於第1B圖(習知內連線結構的實際截面圖)和第1C圖(實際上視圖)。「ILD」表示上述第二介電材料14B,「阻障層」表示形成於圖案化ILD之開口中的第二擴散阻障層,「Cu」代表填入開口的導體材料。內連線結構中出現孔隙會引發可靠度相關的問題。
有鑑於此,亟需能克服上述缺失的內連線結構。即,需要能改善效能與提升可靠度、又不需大幅改變現有材料或製造流程的混成內連線結構。
本發明提出內連線結構(即單嵌型或雙嵌型)和其形成方法,其中密實(即,非多孔性)介電間隙壁形成在介電材料之側壁上。相較於不含有密實介電間隙壁的習知內連線結構,含有密實介電間隙壁的混成內連線結構具有較佳的可靠度和效能。再者,本發明之混成內連線結構有更佳的製程控制性,故具大量生產的潛力。
應注意「提升可靠度」在此是指本發明混成內連線結構具有較佳的阻障層覆蓋性與導體/阻障層之黏著性。良好的阻障層覆蓋性可減少本發明內連線結構的漏電,良好的黏著性則可改善本發明內連線結構的電漂移現象。
本發明提出的混成內連線結構包含位於內連線介電材料之圖案化側壁上的密實介電間隙壁,其可避免最終內連線結構中形成底切區。在一些實施例中,本發明還提出埋置內連線結構的氣隙,此有助於減低內連線結構的整體電
容及增進電路效能。
在一實施例中,本發明提出一種混成內連線結構,包含:一具導體材料之介電材料,導體材料埋置在介電材料的至少一開口內,其中擴散阻障層和密實介電間隙壁側向隔開導體材料與介電材料,且擴散阻障層接觸導體材料。
在另一實施例中,本發明提出一種混成內連線結構,包含:一具導體材料之介電材料,導體材料埋置在介電材料的至少一開口內,其中擴散阻障層、密實介電間隙壁、和氣隙側向隔開導體材料與介電材料,且擴散阻障層接觸導體材料。
在又一實施例中,本發明提出一種內連線結構,包括:一下內連線層,包含一第一介電材料,第一介電材料內含一第一導體材料;以及一上內連線層,包含一具至少一開口的第二介電材料,且該至少一開口接觸下內連線層的第一導體材料,其中第二介電材料具有埋置在至少一開口內的第二導體材料,擴散阻障層和密實介電間隙壁側向隔開第二導體材料與第二介電材料,且擴散阻障層至少接觸第二導體材料。
在一些實施例中,上內連線層亦可包含選擇性的氣隙。
在上述任一實施例中,介電材料包括內連線結構的任一介電層。介電材料可為密實或多孔性介電材料,較佳為多孔性。任一實施例採用之介電材料的介電常數約為4.0
或更少。介電材料的例子包括二氧化矽(SiO2
)、聚倍半矽氧烷(silsesquioxane)、摻雜碳且包括矽(Si)、碳(C)、氧(O)與氫(H)原子之氧化物(即有機矽酸鹽)、SiC(N,H)、熱固性聚芳香醚(polyarylene ether)或上述之多層結構。較佳地,介電材料的介電常數小於二氧化矽的介電常數。
本發明提出之介電間隙壁包含任一介電材料,其組成通常(但非必要)不同於包括埋置導體材料的介電材料。可用於本發明之介電間隙壁的例子包括二氧化矽(SiO2
)、氮化矽(Si3
N4
)、碳化矽(SiC)、聚倍半矽氧烷、摻雜碳且包括矽(Si)、碳(C)、氧(O)與氫(H)原子之氧化物(即有機矽酸鹽)、SiC(N,H)、或熱固性聚芳香醚,但不以此為限。多層密實介電間隙壁亦落入本發明之範圍。
除了上述混成內連線結構外,本發明尚關於製造混成內連線結構的方法。此方法可與當前內連線製程相容,因此不會大幅增加製造成本。另外,本發明之方法(和內連線結構)並不限定ILD材料的種類,故本發明之方法(和內連線結構)的技術應用面更寬。
總言之,本發明之方法包含:使用一介電材料表面的一圖案化硬罩做為遮罩,以在介電材料中形成至少一開口,其中一底切區存在於圖案化硬罩下方;形成一密實介電間隙壁於至少一開口內之介電材料的露出側壁上;形成一擴散阻障層於至少一開口內之密實介電間隙壁
上;以及形成一導體材料於至少一開口內之擴散阻障層上。
在本發明之一些方法實施例中,氣隙留在密實介電間隙壁與介電材料之間。氣隙通常位在上述底切區附近。
本發明提出包括圖案化介電材料側壁上密實介電間隙壁的混成內連線結構和製造混成內連線結構的方法,其現將參照所附圖式詳述於後。本申請案的圖式僅為說明本發明之用,故並未按比例繪製。
為充分了解本發明,以下敘述提及許多細節,例如特殊的結構、組成、材料、尺寸、步驟、和技術。然熟諳此技藝者當可理解,本發明也可不依這些細節實施。在其他例子中,熟知的結構或步驟未再詳述,以免造成本發明晦澀難懂。
將可理解,當指稱某一諸如膜層、區域、或基材之元件位於另一元件「上」或「上方」時,代表該元件直接位在另一元件上、或者二者間夾有中間元件。反之,若指稱某一元件「直接」位於另一元件「上」或「上方」,則表示二者之間無中間元件。亦可理解,當指稱某一元件「連接」或「耦接」另一元件時,代表該元件直接連接或耦接至另一元件、或者二者間設有中間元件。反之,若指稱某一元件「直接連接」或「直接耦接」另一元件,則表示二者之間無中間元件。
本發明大體上提出一種混成內連線結構(例如參見第2A-2B圖),其包括具導體材料60B之介電材料56B,導體材料60B埋置在介電材料56B的至少一開口內,其中擴散阻障層58B、密實介電間隙壁66'、和選擇性氣隙68側向隔開導體材料60B與介電材料56B。
更明確地,第2A及2B圖繪示本發明之不同實施例。第2A圖之實施例包括氣隙,而第2B圖之實施例不含氣隙。二實施例包括下列元件:下內連線層52A,包含第一介電材料56A,第一介電材料56A內含第一導體材料60A。二實施例還包括上內連線層52B。明確地說,上內連線層52B包括具至少一開口的第二介電材料56B,且接觸下內連線層52A的第一導體材料60A。第二介電材料56B具有埋置在至少一開口內的第二導體材料60B,其中擴散阻障層58B、密實介電間隙壁66'、和選擇性氣隙68側向隔開導體材料60B與介電材料56B。若存在氣隙68,則氣隙68位於用來圖案化第二介電材料56B之硬罩底下的底切區。
第2A-2B圖的其他元件符號將配合方法步驟詳細說明於下。
現參照第3A-3F圖,其繪示本發明用來製造第2A圖之混成內連線結構的基本方法步驟。雖然所述基本方法步驟是用來形成第2A圖之內連線結構,但其也可用來形成第2B圖之內連線結構,除了在形成密實介電襯層66時,採行共形效果較佳的沉積技術以完全填充底切特徵64。另一加大氣隙68體積的方法為在蝕刻之後/期間,特意擴大
底切特徵64。
根據本發明,處理流程開始於提供如第3A圖所示之初始內連線結構50。明確地說,第3A圖之初始內連線結構50包含多層內連線,其包括下內連線層52A和上內連線層52B,二者通常(但非必要)由介電覆蓋層54隔開。下內連線層52A位於含有一或多個半導體元件的半導體基材上,且包含第一介電材料56A,其中第一介電材料56A具有至少一導體特徵結構(第一導體材料60A),且第一擴散阻障層58A隔開第一導體材料60A與第一介電材料56A。上內連線層52B包含具至少一開口的第二介電材料56B。第3A圖尚繪示位於第二介電材料上方的圖案化硬罩62、和位於圖案化硬罩62底下的底切區64。
第3A圖顯示二開口:開口106代表用於單嵌結構的接線開口;開口108代表用於雙嵌結構並結合通孔與接線的開口。然本申請案並不局限在此結構。本申請案亦可應用到包括至少一下導體特徵開口(即,第一導體材料60A)的結構。此至少一開口一般為接線開口下方的通孔開口。
第3A圖之初始內連線結構50可用此技藝所熟知的標準內連線製程加以製得。例如,形成初始內連線結構50可先形成第一介電材料56A至基材(未繪示)的表面。基材(未繪示)可包含半導體材料、絕緣材料、導體材料、或其組合物。若基材含有半導體材料,則可使用任一半導體,例如矽(Si)、矽鍺(SiGe)、碳化矽鍺(SiGeC)、碳化矽(SiC)、鍺合金、砷化鎵(GaAs)、砷化銦(InAs)、磷化銦(InP)、和
其他III/V族或II/VI族半導體化合物。除了列出的半導體材料外,本發明採用之半導體基材亦可為疊層半導體,例如Si/SiGe、Si/SiC、絕緣層覆矽(SOI)、或絕緣層覆矽鍺(SGOI)。
若基材為絕緣材料,則絕緣材料可為有機絕緣體、無機絕緣體、或其多層組合物。若基材為導體材料,則基材例如包括多晶矽、金屬元素、金屬元素合金、金屬矽化物、金屬氮化物、或其多層組合物。倘若基材含有半導體材料,則可在其上製作一或多個半導體元件,例如互補式金氧半導體(CMOS)裝置。
下內連線層52A的第一介電材料56A可包含任何包括有機介電質或無機介電質的層間或層內介電質。第一介電材料56A可為多孔性或非多孔性。適合做為第一介電材料56A的介電質例子包括二氧化矽(SiO2
)、聚倍半矽氧烷、摻雜碳且包括矽(Si)、碳(C)、氧(O)與氫(H)原子之氧化物(即有機矽酸鹽)、SiC(N,H)、熱固性聚芳香醚、或其多層結構,但不以此為限。本申請案提及之「聚芳香醚」是指因諸如氧、硫、碸、亞碸、羰基等鍵結、併合環(fused ring)或惰性連接官能基連結在一起的芳基基團(moiety)或惰性取代芳基部分。
第一介電材料56A的介電常數一般為約4.0或以下,較佳為約2.8或以下。應注意低k介電質(介電常數小於4.0)的寄生串音效應比介電常數大於4.0的介電材料小。第一介電材料56A的厚度視介電材料種類與下內連線層52A所
含之介電質數量而定。就正規內連線結構而言,第一介電材料56A的厚度為約200-450奈米(nm)。
下內連線層52A還具有至少一埋置於(即,位於)第一介電材料56A內的導體特徵結構。導體特徵結構包含第一導體材料60A,且第一擴散阻障層58A隔開第一導體材料60A與第一介電材料56A。形成導體特徵結構包括進行微影製程(即塗佈光阻至第一介電材料56A的表面、以預定圖案曝照光阻、及使用傳統光阻顯影劑顯影經曝照之光阻)、蝕刻(乾蝕刻或濕蝕刻)第一介電材料56A以形成開口、及依序將第一擴散阻障層58A與第一導體材料60A填入經蝕刻之區域而構成傳導區域。第一擴散阻障層58A可包含鉭(Ta)、氮化鉭(TaN)、鈦(Ti)、氮化鈦(TiN)、釕(Ru)、銥鉭(Ir(Ta))、氮化銥鉭(Ir(TaN))、釕鉭(Ru(Ta))、氮化釕鉭(Ru(TaN))、鎢(W)、氮化鎢(WN)、或其他當作阻障層以免導體材料擴散通過的材料,其可利用沉積製程形成,例如原子層沉積(ALD)、化學氣相沉積(CVD)、電漿輔助化學氣相沉積(PECVD)、物理氣相沉積(PVD)、濺鍍、化學溶液沉積、或電鍍。
第一擴散阻障層58A的厚度視沉積製程與材料種類而定。第一擴散阻障層58A的厚度通常為約4-40nm,較佳為約7-20nm。
形成第一擴散阻障層58A後,接著以第一導體材料60A填滿第一介電材料56A的開口。導體材料60A例如包括多晶矽、金屬導體、含至少一金屬導體之合金、金屬矽
化物導體、或其組合物。較佳地,導體材料60A為金屬導體,例如銅(Cu)、鎢(W)、或鋁(Al);在本發明中,更佳為Cu或Cu合金(如AlCu)。利用傳統沉積製程可將導體材料60A填入第一介電材料56A的開口;沉積製程包括CVD、PECVD、濺鍍、化學溶液沉積、或電鍍,但不以此為限。沉積後,可進行如化學機械研磨(CMP)之傳統平坦化製程,使第一擴散阻障層58A和導體材料60A的頂面實質上與第一介電材料56A的頂面齊平。
應注意下述之本發明介電間隙壁66'可形成在下內連線層52A。若有,則介電間隙壁66'將沿著含有第一導體材料60A之至少一開口的側壁配置。
形成至少一導體材料60A後,利用諸如CVD、PECVD、化學溶液沉積、或蒸鍍之傳統沉積製程來形成介電覆蓋層54於下內連線層52A的表面。應注意不一定所有的實施例皆需要介電覆蓋層。介電覆蓋層54包含任何適合的介電覆蓋材料,例如碳化矽(SiC)、Si4
NH3
、二氧化矽(SiO2
)、氮化矽(Si3
N4
)、摻雜碳之氧化物、摻雜氮與氫之碳化矽(SiC(N,H))、或其多層結構。介電覆蓋層54的厚度視形成技術與材料種類而定。介電覆蓋層54的厚度通常為約15-55nm,較佳為約25-45nm。
接著,形成第二介電材料56B於介電覆蓋層54的露出表面,藉以形成上內連線層52B。第二介電材料56B包含的介電材料可與下內連線層52A之第一介電材料56A相同或不同,較佳為相同。一實施例中,第二介電材料56B
的介電常數最好小於4.0。第二介電材料56B可為多孔性或非多孔性,較佳為具多孔性。第一介電材料56A採取的製程技術與厚度範圍亦適用第二介電材料56B。
利用標準沉積製程來形成硬罩材料毯覆層(如含氧化物之材料)至第二介電材料56B上;沉積製程例如包括CVD、PECVD、化學溶液沉積、和ALD。或者,硬罩材料可藉由諸如氧化之熱製程形成。
接著,進行上述微影及蝕刻製程,以在第二介電材料56B中形成至少一開口。硬罩材料當作蝕刻製程的圖案化遮罩。微影製程包括塗佈光阻至硬罩材料上、以預定圖案曝照光阻、及顯影經曝照之光阻。光阻經顯影後,圖案會先轉移到硬罩材料(因而形成圖案化硬罩62),再轉移到第二介電材料56B。圖案轉移到硬罩材料後,通常(但非必要)會移除經微影圖案化之光阻。蝕刻製程可包含乾蝕刻、濕蝕刻、或其組合法。「乾蝕刻」在此是指如反應離子蝕刻、離子束蝕刻、電漿蝕刻、或電漿剝除之蝕刻技術。
應注意在上述蝕刻製程期間,由於硬罩材料與第二介電材料56B的蝕刻速率不同,因此圖案化硬罩62底下將形成底切區64。
完成第3A圖之初始內連線結構50後,共形覆蓋介電襯層66於結構的露出表面(即圖案化硬罩62、第二介電材料56B的裸露側壁、和介電覆蓋層54)。第3B圖繪示包括介電襯層66的結構。
介電襯層66為任一密實介電材料,包括上述第一與第
二介電材料。介電襯層66的組成通常(但非必要)不同於第二介電材料56B。做為襯層66的介電材料例子包括聚倍半矽氧烷、摻雜碳且包括矽(Si)、碳(C)、氧(O)與氫(H)原子之氧化物(即有機矽酸鹽)、熱固性聚芳香醚、二氧化矽(SiO2
)、氮化矽(Si3
N4
)、SiC(N,H)、碳化矽(SiC)、或其多層結構。
介電襯層66可藉由任一沉積製程形成,例如包括CVD和PECVD。介電襯層66的厚度通常為約100-2000埃(Å),較佳為約300-800Å。
應注意在正常沉積條件下,沉積介電襯層66後,結構將留有氣隙68。氣隙68可降低內連線結構的整體電容。如圖所示,氣隙68位在圖案化硬罩62下方且位於襯層66與圖案化之第二介電材料56B間。
接著異向性蝕刻第3B圖之介電襯層66,以形成介電間隙壁66'(參見第3C圖)於圖案化之第二介電材料56B的裸露側壁上;異向性蝕刻步驟可移除結構水平面的所有介電材料。第3C圖繪示包括介電間隙壁66'的結構。
應注意上述異向性蝕刻步驟通常也會移除一部分的介電覆蓋層54。若用來形成介電間隙壁66'之蝕刻步驟不能移除底下的介電覆蓋層54,則另可進行蝕刻製程來選擇性移除露出的介電覆蓋層54。
接著,形成第二擴散阻障層58B於包括已形成介電間隙壁66'之露出表面上。第3D圖繪示此結構。第二擴散阻障層58B包含氮化鉭(TaN)、鉭(Ta)、鈦(Ti)、氮化鈦(TiN)、
銥鉭(Ir(Ta))、氮化銥鉭(Ir(TaN))、釕鉭(Ru(Ta))、氮化釕鉭(Ru(TaN))、鎢(W)、氮化鎢(WN)的至少其中之一。第二擴散阻障層58B可利用沉積製程形成,例如原子層沉積(ALD)、化學氣相沉積(CVD)、電漿輔助化學氣相沉積(PECVD)、物理氣相沉積(PVD)、濺鍍、化學溶液沉積、或電鍍。
第二擴散阻障層58B的厚度視第二擴散阻障層58B所含之介電質數量、形成技術與材料種類而定。第二擴散阻障層58B的厚度通常為約4-40nm,較佳為約7-20nm。
值得注意的是,密實介電間隙壁66'有助於形成連續的第二擴散阻障層58B。
根據本發明,選擇性電鍍晶種層(未繪示)形成在第二擴散阻障層58B上的至少一開口內。儘管電鍍晶種層可有可無,然結構中最好包括電鍍晶種層,以協助導體材料生成。此尤其適用當金屬導體或金屬合金隨後形成於開口內的情況。若有電鍍晶種層,其例如可包含下述導體材料的金屬導體或金屬合金。一般來說,若導體材料包含Cu,則電鍍晶種層包含銅(Cu)、銅鋁(CuAl)、銅銥(CuIr)、銅鉭(CuTa)、銅銠(CuRb)、釕(Ru)、銥(Ir)、銅釕(CuRu)、或其他銅合金(即含銅之合金)。
電鍍晶種層例如可由傳統沉積製程形成,包括ALD、CVD、PECVD、PVD、化學溶液沉積等。電鍍晶種層的厚度可依情況改變,熟諳此技藝者周知其範圍。電鍍晶種層的厚度通常為約2-80nm。
接著,形成第二導體材料60B至至少一開口內,第二導體材料60B可同於或不同於第一導體材料60A。第二導體材料60B構成結構的第二導體特徵結構。較佳地,第二導體材料60B採用銅(Cu)、鋁(Al)、鎢(W)、或其合金,更佳為使用Cu或AlCu。可利用與上述形成第一導體材料60A之沉積製程相同的方法來形成第二導體材料60B;沉積完第二導體材料60B後,平坦化此結構。第3E圖繪示沉積導體材料60B後的內連線結構,第3F圖繪示平坦化後的內連線結構。平坦化製程包括研磨及/或化學機械研磨(CMP),其可用來移除結構上的圖案化硬罩62。
平坦化後,依上述方法形成第二介電覆蓋層54B,如此將構成第2A圖的結構。
應注意同樣的基本方法步驟也可用來形成第2B圖的結構,除了採行共形沉積技術來形成介電襯層66,使得結構中無氣隙產生。另一加大氣隙68體積的方法為在蝕刻之後/期間,特意擴大底切特徵64。
應注意上述實施例為描述封閉型通孔底部結構。本發明之另一實施例亦可提供開放型通孔底部結構。就開放型通孔底部結構而言,第二導體材料60B直接接觸第一導體材料60A的表面。利用離子轟擊或其他類似的等向性蝕刻製程來移除通孔底部的第二擴散阻障層,可形成開放型通孔底部結構。本發明還可應用到錨狀通孔底部結構。藉著先利用選擇性蝕刻製程在第一介電材料56A之導體特徵結構中蝕刻形成凹陷,可形成錨狀通孔底部結構。形成第二
擴散阻障層後,通常會利用等向性蝕刻製程來移除通孔與凹陷底部的第二擴散阻障層。然後依上述方法形成第二導體材料。
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10‧‧‧內連線結構
12A、12B‧‧‧內連線層
14A、14B‧‧‧介電材料
16A‧‧‧阻障層
18A‧‧‧導體材料
20‧‧‧覆蓋層
22‧‧‧硬罩
24‧‧‧底切區
50‧‧‧內連線結構
52A、52B‧‧‧內連線層
54、54B‧‧‧覆蓋層
56A、56B‧‧‧介電材料
58A、58B‧‧‧阻障層
60A、60B‧‧‧導體材料
62‧‧‧硬罩
64‧‧‧底切特徵/底切區
66‧‧‧襯層
66'‧‧‧間隙壁
68‧‧‧氣隙
106、108‧‧‧開口
第1A圖為習知內連線結構的局部剖面示意圖,其在含氧化物之硬罩與低k介電材料間存有底切區。
第1B圖為習知內連線結構的實際截面圖,其包括由第1A圖底切區變成的孔隙。
第1C圖為習知內連線結構的上視圖,其截面如第1B圖所示。
第2A-2B圖為根據本發明第一實施例與第二實施例之混成內連線結構的剖面示意圖。
第3A-3F圖繪示本發明採用之基本方法步驟的截面,用以製造第2A圖之混成內連線結構。
52A、52B‧‧‧內連線層
54、54B‧‧‧覆蓋層
56A、56B‧‧‧介電材料
58A、58B‧‧‧阻障層
60A、60B‧‧‧導體材料
66'‧‧‧間隙壁
68‧‧‧氣隙
Claims (32)
- 一種內連線結構,包含:一介電材料,該介電材料具有一導體材料,該導體材料埋置在該介電材料的至少一個開口內,其中一擴散阻障層和一密實介電間隙壁側向隔開該導體材料與該介電材料,且該擴散阻障層直接接觸該導體材料,而該密實介電間隙壁僅直接位於該擴散阻障層之一側壁表面上,且其中該擴散阻障層、該導體材料、該介電材料以及該密實介電間隙壁之每一者之一上表面係彼此共面(coplanar)。
- 如申請專利範圍第1項所述之內連線結構,其中該介電材料的一介電常數係約4.0或更少。
- 如申請專利範圍第2項所述之內連線結構,其中該介電材料為二氧化矽(SiO2 )、一聚倍半矽氧烷(silsesquioxane)、一摻雜碳且包括矽(Si)、碳(C)、氧(O)與氫(H)原子之氧化物、摻雜氮與氫之碳化矽(SiC(N,H))、和一熱固性聚芳香醚(polyarylene ether)的其中之一。
- 如申請專利範圍第2項所述之內連線結構,其中該介電材料具多孔性。
- 如申請專利範圍第1項所述之內連線結構,其中該密實 介電間隙壁包含二氧化矽(SiO2 )、氮化矽(Si3 N4 )、碳化矽(SiC)、一聚倍半矽氧烷、一摻雜碳且包括矽(Si)、碳(C)、氧(O)與氫(H)原子之氧化物、摻雜氮與氫之碳化矽(SiC(N,H))、一熱固性聚芳香醚或上述之多層結構。
- 如申請專利範圍第1項所述之內連線結構,其中該密實介電間隙壁的組成不同於該介電材料。
- 如申請專利範圍第1項所述之內連線結構,其中該導體材料包含多晶矽、一金屬導體、一包含至少一個金屬導體之合金、一金屬導體矽化物或上述之組合物。
- 如申請專利範圍第1項所述之內連線結構,其中該導體材料為銅(Cu)、鎢(W)、鋁(Al)或一銅合金。
- 如申請專利範圍第1項所述之內連線結構,其中該擴散阻障層包含鉭(Ta)、氮化鉭(TaN)、鈦(Ti)、氮化鈦(TiN)、釕(Ru)、銥鉭(Ir(Ta))、氮化銥鉭(Ir(TaN))、釕鉭(Ru(Ta))、氮化釕鉭(Ru(TaN))、鎢(W)或氮化鎢(WN)。
- 一種內連線結構,包含:一介電材料,該介電材料具有一導體材料,該導體材料埋置在該介電材料的至少一個開口內,其中一擴散阻障層 與一密實介電間隙壁側向隔開該導體材料與該介電材料,且該擴散阻障層直接接觸該導體材料,而該密實介電間隙壁直接位於該擴散阻障層之一側壁表面上,但不位於該導體材料之一上表面上。
- 如申請專利範圍第10項所述之內連線結構,其中該介電材料的一介電常數係約4.0或更少。
- 如申請專利範圍第11項所述之內連線結構,其中該介電材料為二氧化矽(SiO2 )、一聚倍半矽氧烷、一摻雜碳且包括矽(Si)、碳(C)、氧(O)與氫(H)原子之氧化物、摻雜氮與氫之碳化矽(SiC(N,H))和一熱固性聚芳香醚的其中之一。
- 如申請專利範圍第11項所述之內連線結構,其中該介電材料具多孔性。
- 如申請專利範圍第10項所述之內連線結構,其中該密實介電間隙壁包含二氧化矽(SiO2 )、氮化矽(Si3 N4 )、碳化矽(SiC)、一聚倍半矽氧烷、一摻雜碳且包括矽(Si)、碳(C)、氧(O)與氫(H)原子之氧化物、摻雜氮與氫之碳化矽(SiC(N,H))、一熱固性聚芳香醚或上述之多層結構。
- 如申請專利範圍第10項所述之內連線結構,其中該密實介電間隙壁的組成不同於該介電材料。
- 如申請專利範圍第10項所述之內連線結構,其中該導體材料包含多晶矽、一金屬導體、一包含至少一個金屬導體之合金、一金屬導體矽化物或上述之組合物。
- 如申請專利範圍第10項所述之內連線結構,其中該導體材料為銅(Cu)、鎢(W)、鋁(Al)或一銅合金。
- 如申請專利範圍第10項所述之內連線結構,其中該擴散阻障層包含鉭(Ta)、氮化鉭(TaN)、鈦(Ti)、氮化鈦(TiN)、銥鉭(Ir(Ta))、氮化銥鉭(Ir(TaN))、釕鉭(Ru(Ta))、氮化釕鉭(Ru(TaN))、鎢(W)或氮化鎢(WN)。
- 一種內連線結構,包含:一下內連線層,該下內連線層包含一第一介電材料,該第一介電材料具有一第一導體材料埋置其中;以及一上內連線層,該上內連線層包含一具至少一個開口的第二介電材料,且該至少一個開口接觸該下內連線層的該第一導體材料,一介電罩層覆蓋具一底切區之該第二介電材料,該底切區存在於該第二介電材料之一上表面與該第二介電材料中之該至少一個開口之一介面,一密實介電間 隙壁存在於該至少一個開口之一側壁且存在於該底切區,而一擴散阻障層存在於該密實介電間隙壁上,其中該第二介電材料具有埋置在該至少一個開口內的一第二導體材料,一擴散阻隙層和該密實介電間隙壁側向隔開該第二導體材料與該第二介電材料,且該擴散阻障層至少接觸該第二導體材料。
- 如申請專利範圍第19項所述之內連線結構,更包含一氣隙,該氣隙位於該密實介電間隙壁與該第二介電材料之一上部之間。
- 如申請專利範圍第19項所述之內連線結構,其中該第二介電材料為二氧化矽(SiO2 )、一聚倍半矽氧烷、一摻雜碳且包括矽(Si)、碳(C)、氧(O)與氫(H)原子之氧化物、摻雜氮與氫之碳化矽(SiC(N,H))和一熱固性聚芳香醚的其中之一。
- 如申請專利範圍第19項所述之內連線結構,其中該第二介電材料具多孔性。
- 如申請專利範圍第19項所述之內連線結構,其中該密實介電間隙壁包含二氧化矽(SiO2 )、氮化矽(Si3 N4 )、碳化矽(SiC)、一聚倍半矽氧烷、一摻雜碳且包括矽(Si)、碳(C)、 氧(O)與氫(H)原子之氧化物、摻雜氮與氫之碳化矽(SiC(N,H))、一熱固性聚芳香醚或上述之多層結構。
- 如申請專利範圍第19項所述之內連線結構,其中該密實介電間隙壁的組成不同於該第二介電材料。
- 如申請專利範圍第19項所述之內連線結構,其中該第二導體材料包含多晶矽、一金屬導體、一包含至少一個金屬導體之合金、一金屬導體矽化物或上述之組合物。
- 如申請專利範圍第19項所述之內連線結構,其中該第二導體材料為銅(Cu)、鎢(W)、鋁(Al)或一銅合金。
- 一種形成一內連線結構之方法,該方法包含以下步驟:使用位於一介電材料之一表面上的一圖案化硬罩做為一遮罩,以在該介電材料中形成至少一個開口,其中一底切區從該至少一個開口側向延伸至該介電材料而存在於該圖案化硬罩下方;形成一密實介電間隙壁於該至少一開口內之該介電材料的露出側壁上;形成一擴散阻障層於該至少一開口內之該密實介電間隙壁上;以及形成一導體材料於該至少一開口內之該擴散阻障層上。
- 如申請專利範圍第27項所述之方法,其中在形成該密實介電間隙壁時,留下一氣隙於該底切區中。
- 如申請專利範圍第27項所述之方法,其中該密實介電間隙壁之形成係藉由沉積一密實介電襯層及進行異向性蝕刻加以完成。
- 如申請專利範圍第27項所述之方法,更包含形成一電鍍晶種層於該擴散阻障層上,且利用電鍍形成該導體材料。
- 如申請專利範圍第27項所述之方法,其中形成該至少一個開口包括進行微影及蝕刻,其中該蝕刻形成該底切區,且該至少一個開口包括一通孔開口、一接線開口、或一結合通孔與接線的開口。
- 如申請專利範圍第27項所述之方法,其中形成該擴散阻障層係利用原子層沉積(ALD)、化學氣相沉積(CVD)、電漿輔助化學氣相沉積(PECVD)、物理氣相沉積(PVD)、濺鍍、化學溶液沉積或電鍍。
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US20080174017A1 (en) | 2008-07-24 |
US20130230983A1 (en) | 2013-09-05 |
US20130221529A1 (en) | 2013-08-29 |
TW200837881A (en) | 2008-09-16 |
US8753979B2 (en) | 2014-06-17 |
US8796854B2 (en) | 2014-08-05 |
US8754526B2 (en) | 2014-06-17 |
US20130228925A1 (en) | 2013-09-05 |
US7973409B2 (en) | 2011-07-05 |
US8456006B2 (en) | 2013-06-04 |
US20110260323A1 (en) | 2011-10-27 |
KR20090104870A (ko) | 2009-10-06 |
WO2008091558A1 (en) | 2008-07-31 |
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