JP4574145B2 - エアギャップ形成 - Google Patents
エアギャップ形成 Download PDFInfo
- Publication number
- JP4574145B2 JP4574145B2 JP2003320111A JP2003320111A JP4574145B2 JP 4574145 B2 JP4574145 B2 JP 4574145B2 JP 2003320111 A JP2003320111 A JP 2003320111A JP 2003320111 A JP2003320111 A JP 2003320111A JP 4574145 B2 JP4574145 B2 JP 4574145B2
- Authority
- JP
- Japan
- Prior art keywords
- sacrificial material
- meth
- layer
- material layer
- overlay
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0006—Interconnects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0108—Sacrificial polymer, ashing of organics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24628—Nonplanar uniform thickness material
Description
米国特許第6,165,890号(Kohlら)は、ポリノルボルネンポリマーなどのポリシクロオレフィンポリマーをエアギャップ形成材料として使用した、電気配線におけるエアギャップ形成の方法を開示している。しかしそのようなポリシクロオレフィンポリマーは作成するのに高価であり、比較的高い分解温度、たとえば380〜450℃を必要とすることがある。そのような温度は電気配線の製造に使用される他の材料に有害なことがある。さらにポリシクロオレフィンポリマーは通常、ポリマーを汚染し、これらのポリマーから形成されるエアギャップ中に金属イオン汚染を生じさせる金属触媒を使用して調製される。
架橋ポリマー粒子は、米国特許第6,420,441 B1号(Allenら)で開示された溶液重合技法を用いて調製する。架橋ポリマーの組成は表1に示す。
プロピレングリコールモノメチルエーテルアセテートなどのスピンコーティング用の適切な溶媒中に、実施例1〜29のいずれか1つの架橋ポリマーを含む組成物を調製する。これらの組成物を次に犠牲材料フィルムを形成するために、一連のウェーハ上にスピンコートする。ウェーハは次に溶媒を除去するために、150℃にて1分間、ソフトベークする。メチルシルセスキオキサンおよびフェニルシルセスキオキサン並びに除去性ポロジェンとして架橋ポリマー粒子を含む有機ポリシリカ材料を次に、犠牲材料の表面上にオーバーレイ材料として配置する。有機ポリシリカ材料を硬化するために、有機ポリシリカは90℃にて10分間、ソフトベークし、続いて130℃にてベークする。次いで市販のフォトレジストを有機ポリシリカに塗布する。フォトレジストを次にベーク、描画および現像する。パターンを形成するために、有機ポリシリカ材料および犠牲材料を次にエッチングして、フォトレジストを次に除去し、タンタル/窒化タンタルバリアおよび銅シード層を公知の蒸着工程を用いて形成する。次に、マサチューセッツ州マルボロのシップレーカンパニーから入手できるUltrafill 2001銅電気めっき浴および標準めっき条件を用いて、銅線をパターン内に形成する。めっきの後、デラウェア州ニューアークのロデル社からどちらも入手できる市販のスラリーおよびモデルIC 1010パッドを用いた化学的機械的平坦化を使用して、次にウェーハを平坦化する。平坦化の後、多孔質有機ポリシリカオーバーレイ材料を形成するために、ウェーハを250℃にて1時間加熱することによって、有機ポリシリカ材料中の除去性ポロジェンを除去する。次に、犠牲材料を除去してエアギャップを形成するために、ウェーハを400〜450℃で1時間加熱する。
ステップの順序を変更することを除いて、実施例30の手順を反復する。犠牲材料をウェーハ上に配置して乾燥した後、公知のリソグラフ技法を用いてパターン形成し、続いてエッチングとバリア層堆積を行う。次に銅をウェーハ上のエッチング済み形状内に堆積し、次にウェーハを平坦化する。平坦化の後、メチルシルセスキオキサンおよびフェニルシルセスキオキサン並びに除去性ポロジェンとして架橋ポリマー粒子を含む有機ポリシリカ材料を次に、犠牲材料および銅線の表面上にオーバーレイ材料として配置する。有機ポリシリカ材料を硬化するために、有機ポリシリカを90℃にて10分間、ソフトベークし、続いて130℃にてベークする。次に、多孔質有機ポリシリカオーバーレイ材料を形成するために、ウェーハを250℃にて1時間加熱することによって、有機ポリシリカ材料中の除去性ポロジェンを除去する。次に、犠牲材料を除去してエアギャップを形成するために、ウェーハを400〜450℃で1時間加熱する。
プロピレングリコールモノメチルエーテルアセテート中にTMPTMAおよびフリーラジカル重合触媒を含む犠牲材料組成物をウェーハ上にスピンコートする。溶媒を除去するために、次にウェーハをソフトベークする。TMPTMAの重合を引き起こして犠牲材料フィルムを形成するために、生じた犠牲材料層を次に、適切な波長の化学線照射にブランケット露光する。このフィルムは次に、実施例30または実施例31のどちらかの手順にしたがって処理する。
犠牲材料組成物がTMPTMA、フリーラジカル重合触媒、スチレンおよびPETMAを70/30の重量比で重合単位として含むポリマー、並びにプロピレングリコールモノメチルエーテルアセテートを含むことを除いて、実施例32の手順を反復する。
感光性の熱除去性組成物は、成分を表に示す量で組合せることによって調製する。組成物の総固形分含有量は≧60%である。
有機溶媒を含むフラスコに、実施例7のポリマー粒子組成物70gを加える。メタクリル酸無水物をポリマー粒子中のヒドロキシル基のレベルよりも低いモル比でフラスコに加える。溶液を2時間攪拌し、次に10gのイオン交換樹脂(IRA−400、ローム・アンド・ハース・カンパニーより入手可能)を溶液に添加する。次に溶液を濾過してイオン交換樹脂を除去する。続いてこの溶液に、TMPTMA30gおよびフリーラジカル開始剤(チバガイギーより入手可能なIRGACURE 500)を加える。混合物を次に電子デバイス基体にコートして、300〜350℃にて硬化する。生じたフィルムは安定である。有機ポリシリカオーバーレイ材料を硬化混合物に塗布する。硬化したポリマー混合物を除去し、エアギャップを形成するために、デバイスを次に窒素雰囲気下で400℃に加熱する。
Dowanol PM中のスチレン/2−ヒドロキシエチルメタクリレート/メチルメタクリレート/n−ブチルメタクリレート(固形分27%)40.3g、エチルラクテート中のグルコウリル架橋剤(Powderlink 1174)の溶液(固体10%)45g、p−トルエンスルホン酸0.15g、およびDowanol PMアセテート16.5gを組合せることによって溶液を調製する。生成物の固体成分の重量比はポリマー69%、架橋剤30%、および酸触媒1%であり、総固形分含有量15%である。次に材料を濾過(0.05μmフィルタ)して、200mmシリコンウェーハに2500rpmでコートして、次に150℃にてソフトベークし、厚さ約600nmのフィルムを生成する。材料を窒素雰囲気下で450℃にて60分間分解し、生じたフィルム厚の差を測定する(以下の表3を参照)。
Dowanol PMアセテート中のヒドロキシポリプロピレングリコールメタクリレート/トリメチロールプロピルトリメタクリレート(90/10)(固体14.5%)47.6g、エチルラクテート中のグルコウリル架橋剤(Powderlink 1174)の溶液(固体10%)30g、p−トルエンスルホン酸0.1g、およびDowanol PMアセテート22.3gを組合せることによって溶液を調製する。生成物の固形成分の重量比はポリマー69%、架橋剤30%、および酸触媒1%であり、総固形分含有量10%である。次に材料を濾過(0.05μmフィルタ)して、200mmシリコンウェーハに2500rpmでコートして、次に150℃にてソフトベークし、厚さ約80nmのフィルムを生成する。材料を窒素雰囲気下で450℃にて60分間分解し、生じたフィルム厚の差を測定する(以下の表3を参照)。
10 誘電層
15 金属線
20 犠牲材料
21 エアギャップ
25 多孔質オーバーレイ
30 基体
35 犠牲材料
36 エアギャップ
40 金属線
41 バリア層
45 多孔質オーバーレイ
50 基体
55 犠牲材料
56 エアギャップ
60 多孔質オーバーレイ材料
65 金属線
Claims (9)
- a)犠牲材料層をデバイス基体上に配置するステップと;b)オーバーレイ材料を犠牲材料層上に配置するステップと;次に、c)エアギャップを形成するために犠牲材料層を除去するステップとを含み;犠牲材料層が(メタ)アクリル酸、(メタ)アクリルアミド、アルキル(メタ)アクリレート、アルケニル(メタ)アクリレート、芳香族(メタ)アクリレート、ビニル芳香族モノマー、窒素含有化合物およびそのチオ類似体、置換エチレンモノマー、環状オレフィン、ならびに置換環状オレフィンから選択される1以上のモノマーを重合単位として含む架橋ポリマーを含む、電子、光電子または電子機械デバイスを製造する方法。
- 犠牲材料が光描画性である、請求項1に記載の方法。
- デバイス基体が金属線を含む、請求項1〜2のいずれか一項に記載の方法。
- i)形状を形成するためにオーバーレイ材料および犠牲材料層をパターン形成するステップと;ii)金属を形状内に堆積するステップとをさらに含み、ステップi)およびii)がステップb)の後かつステップc)の前に実施される、請求項1〜3のいずれか一項に記載の方法。
- オーバーレイ材料が十分な多孔質を持ち、犠牲材料がそれを通じて除去されるようにする、請求項1〜4のいずれか一項に記載の方法。
- 所望の機械的特性を提供するために場合によりオーバーレイ材料を硬化するステップと、所望の電気機械形状を形成するために犠牲材料をパターン形成するステップと、犠牲材料層を除去するステップとを含む、請求項1〜5のいずれか一項に記載の方法。
- 金属線および金属線の間に配置された犠牲材料層とを含む第一の層と、金属線および犠牲材料の上に配置された第二の層とを含み;犠牲材料層が(メタ)アクリル酸、(メタ)アクリルアミド、アルキル(メタ)アクリレート、アルケニル(メタ)アクリレート、芳香族(メタ)アクリレート、ビニル芳香族モノマー、窒素含有化合物およびそのチオ類似体、置換エチレンモノマー、環状オレフィン、ならびに置換環状オレフィンから選択される1以上のモノマーを重合単位として含む架橋ポリマーを含む、電子デバイス。
- 第二の層が金属線に隣接して配置された、請求項7に記載の電子デバイス。
- 金属線が基体上に形成された銅線であって、その上に配置された1以上の銅拡散バリアを持つ銅線であり、および第二の層が多孔質オーバーレイ材料である、請求項7または8に記載の電子デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US41485702P | 2002-09-13 | 2002-09-13 | |
US44216203P | 2003-01-23 | 2003-01-23 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004266244A JP2004266244A (ja) | 2004-09-24 |
JP2004266244A5 JP2004266244A5 (ja) | 2006-10-05 |
JP4574145B2 true JP4574145B2 (ja) | 2010-11-04 |
Family
ID=31891552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003320111A Expired - Fee Related JP4574145B2 (ja) | 2002-09-13 | 2003-09-11 | エアギャップ形成 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7256127B2 (ja) |
EP (1) | EP1398831A3 (ja) |
JP (1) | JP4574145B2 (ja) |
KR (1) | KR101032003B1 (ja) |
CN (1) | CN1312754C (ja) |
TW (1) | TWI255003B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11527477B2 (en) | 2020-03-16 | 2022-12-13 | Kioxia Corporation | Semiconductor device and method of manufacturing semiconductor device |
Families Citing this family (111)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6454003B1 (en) * | 2000-06-14 | 2002-09-24 | Ondeo Nalco Energy Services, L.P. | Composition and method for recovering hydrocarbon fluids from a subterranean reservoir |
US7150789B2 (en) * | 2002-07-29 | 2006-12-19 | Micron Technology, Inc. | Atomic layer deposition methods |
US6890596B2 (en) * | 2002-08-15 | 2005-05-10 | Micron Technology, Inc. | Deposition methods |
US6753271B2 (en) * | 2002-08-15 | 2004-06-22 | Micron Technology, Inc. | Atomic layer deposition methods |
US6673701B1 (en) * | 2002-08-27 | 2004-01-06 | Micron Technology, Inc. | Atomic layer deposition methods |
US6867125B2 (en) * | 2002-09-26 | 2005-03-15 | Intel Corporation | Creating air gap in multi-level metal interconnects using electron beam to remove sacrificial material |
US7799516B2 (en) * | 2002-10-16 | 2010-09-21 | Georgia Tech Research Corporation | Polymers, methods of use thereof, and methods of decomposition thereof |
US7052821B2 (en) * | 2002-11-01 | 2006-05-30 | Georgia Tech Research Corporation | Sacrificial compositions, methods of use thereof, and methods of decomposition thereof |
US7404990B2 (en) * | 2002-11-14 | 2008-07-29 | Air Products And Chemicals, Inc. | Non-thermal process for forming porous low dielectric constant films |
US20060264065A1 (en) * | 2003-02-05 | 2006-11-23 | So Ying H | Sacrificial styrene benzocyclobutene copolymers for making air gap semiconductor devices |
US7435074B2 (en) * | 2004-03-13 | 2008-10-14 | International Business Machines Corporation | Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning |
US7030041B2 (en) * | 2004-03-15 | 2006-04-18 | Applied Materials Inc. | Adhesion improvement for low k dielectrics |
US8476096B2 (en) * | 2004-03-15 | 2013-07-02 | Georgia Tech Research Corporation | Packaging for micro electro-mechanical systems and methods of fabricating thereof |
US8263316B2 (en) * | 2004-10-01 | 2012-09-11 | Rohm And Haas Electronic Materials Llc | Electronic device manufacture |
US7064066B1 (en) * | 2004-12-07 | 2006-06-20 | Intel Corporation | Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode |
US7217648B2 (en) * | 2004-12-22 | 2007-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-ESL porogen burn-out for copper ELK integration |
JP4679193B2 (ja) * | 2005-03-22 | 2011-04-27 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置 |
US20060273065A1 (en) * | 2005-06-02 | 2006-12-07 | The Regents Of The University Of California | Method for forming free standing microstructures |
US7629225B2 (en) * | 2005-06-13 | 2009-12-08 | Infineon Technologies Ag | Methods of manufacturing semiconductor devices and structures thereof |
JP2009515354A (ja) * | 2005-11-08 | 2009-04-09 | エヌエックスピー ビー ヴィ | 一時的なキャップ層を用いる、覆われた、基板を貫通するビアの製造 |
US7482265B2 (en) * | 2006-01-10 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | UV curing of low-k porous dielectrics |
FR2897198B1 (fr) * | 2006-02-08 | 2008-09-19 | Commissariat Energie Atomique | Structure d'interconnexions et procede de realisation |
US8399349B2 (en) | 2006-04-18 | 2013-03-19 | Air Products And Chemicals, Inc. | Materials and methods of forming controlled void |
KR100772835B1 (ko) * | 2006-07-12 | 2007-11-01 | 동부일렉트로닉스 주식회사 | 에어갭을 포함하는 반도체 소자 및 그 제조방법 |
US8003537B2 (en) * | 2006-07-18 | 2011-08-23 | Imec | Method for the production of planar structures |
US7759241B2 (en) * | 2006-09-15 | 2010-07-20 | Intel Corporation | Group II element alloys for protecting metal interconnects |
JP2008091600A (ja) * | 2006-10-02 | 2008-04-17 | Sony Corp | 半導体装置の製造方法 |
KR100861839B1 (ko) * | 2006-12-28 | 2008-10-07 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 배선 형성 방법 |
US7973409B2 (en) * | 2007-01-22 | 2011-07-05 | International Business Machines Corporation | Hybrid interconnect structure for performance improvement and reliability enhancement |
KR100843233B1 (ko) * | 2007-01-25 | 2008-07-03 | 삼성전자주식회사 | 배선층의 양측벽에 인접하여 에어갭을 갖는 반도체 소자 및그 제조방법 |
FR2913816B1 (fr) * | 2007-03-16 | 2009-06-05 | Commissariat Energie Atomique | Procede de fabrication d'une structure d'interconnexions a cavites pour circuit integre |
FR2916303B1 (fr) * | 2007-05-15 | 2009-07-31 | Commissariat Energie Atomique | Procede de fabrication de cavites d'air utilisant des nanotubes |
US20090087562A1 (en) * | 2007-09-27 | 2009-04-02 | Long Hua Lee | Method of preparing cross-linked organic glasses for air-gap sacrificial layers |
US7829268B2 (en) * | 2007-10-17 | 2010-11-09 | Tokyo Electron Limited | Method for air gap formation using UV-decomposable materials |
US7666754B2 (en) * | 2007-10-18 | 2010-02-23 | Tokyo Electron Limited | Method and system for forming an air gap structure |
US8159056B1 (en) | 2008-01-15 | 2012-04-17 | Rf Micro Devices, Inc. | Package for an electronic device |
US8851442B2 (en) | 2008-01-22 | 2014-10-07 | Honeywell International Inc. | Aerogel-bases mold for MEMS fabrication and formation thereof |
JP2009194286A (ja) * | 2008-02-18 | 2009-08-27 | Panasonic Corp | 半導体装置及びその製造方法 |
US7838389B2 (en) * | 2008-05-30 | 2010-11-23 | Freescale Semiconductor, Inc. | Enclosed void cavity for low dielectric constant insulator |
US7919388B2 (en) * | 2008-05-30 | 2011-04-05 | Freescale Semiconductor, Inc. | Methods for fabricating semiconductor devices having reduced gate-drain capacitance |
JP5342811B2 (ja) * | 2008-06-09 | 2013-11-13 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
DE102009010845B4 (de) * | 2009-02-27 | 2016-10-13 | Advanced Micro Devices, Inc. | Verfahren zur Herstellung eines Mikrostrukturbauelements mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten und wieder aufgefüllten Luftspaltausschließungszonen |
US7855123B2 (en) * | 2009-03-31 | 2010-12-21 | Tokyo Electron Limited | Method of integrating an air gap structure with a substrate |
US7952174B2 (en) * | 2009-05-28 | 2011-05-31 | Micron Technology, Inc. | Method and apparatus providing air-gap insulation between adjacent conductors using nanoparticles |
EP2266919A1 (en) * | 2009-06-25 | 2010-12-29 | Nxp B.V. | Mems devices |
US8198133B2 (en) * | 2009-07-13 | 2012-06-12 | International Business Machines Corporation | Structures and methods to improve lead-free C4 interconnect reliability |
DE102009044645A1 (de) * | 2009-11-25 | 2011-05-26 | Fachhochschule Bielefeld | Verfahren zur Herstellung wenigstens einer Kavität in einer mikroelektronischen und/oder mikromechanischen Struktur und Sensor oder Aktor mit einer solchen Kavität |
KR20120025315A (ko) * | 2010-09-07 | 2012-03-15 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8765573B2 (en) * | 2010-09-20 | 2014-07-01 | Applied Materials, Inc. | Air gap formation |
US8293657B2 (en) * | 2010-11-05 | 2012-10-23 | Honeywell International Inc. | Sacrificial layers made from aerogel for microelectromechanical systems (MEMS) device fabrication processes |
JP2012174843A (ja) * | 2011-02-21 | 2012-09-10 | Tokyo Electron Ltd | 金属薄膜の成膜方法、半導体装置及びその製造方法 |
JP6299058B2 (ja) * | 2011-03-02 | 2018-03-28 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法及び電子機器 |
KR102054264B1 (ko) | 2012-09-21 | 2019-12-10 | 삼성전자주식회사 | 반도체 소자 및 그의 제조 방법 |
US8795774B2 (en) * | 2012-09-23 | 2014-08-05 | Rohm And Haas Electronic Materials Llc | Hardmask |
KR20140095120A (ko) | 2013-01-16 | 2014-08-01 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US10053597B2 (en) | 2013-01-18 | 2018-08-21 | Basf Se | Acrylic dispersion-based coating compositions |
KR20140094880A (ko) * | 2013-01-23 | 2014-07-31 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
FR3002219B1 (fr) | 2013-02-19 | 2015-04-10 | Commissariat Energie Atomique | Procede de fabrication d'une structure micromecanique et/ou nanomecanique comportant une surface poreuse |
US9414557B1 (en) | 2013-02-21 | 2016-08-16 | Agrigenetics, Inc. | Canola inbred restorer line CE185952R |
US8921235B2 (en) * | 2013-03-04 | 2014-12-30 | Applied Materials, Inc. | Controlled air gap formation |
US9698153B2 (en) | 2013-03-12 | 2017-07-04 | Sandisk Technologies Llc | Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad |
US9515080B2 (en) | 2013-03-12 | 2016-12-06 | Sandisk Technologies Llc | Vertical NAND and method of making thereof using sequential stack etching and landing pad |
US8946023B2 (en) | 2013-03-12 | 2015-02-03 | Sandisk Technologies Inc. | Method of making a vertical NAND device using sequential etching of multilayer stacks |
US9230987B2 (en) | 2014-02-20 | 2016-01-05 | Sandisk Technologies Inc. | Multilevel memory stack structure and methods of manufacturing the same |
US9449982B2 (en) | 2013-03-12 | 2016-09-20 | Sandisk Technologies Llc | Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks |
CN104051331B (zh) * | 2013-03-13 | 2016-10-19 | 旺宏电子股份有限公司 | 3d阵列的大马士革半导体装置及其形成方法 |
CN104701238B (zh) | 2013-11-14 | 2019-10-08 | 罗门哈斯电子材料有限公司 | 间隙填充方法 |
US9312168B2 (en) * | 2013-12-16 | 2016-04-12 | Applied Materials, Inc. | Air gap structure integration using a processing system |
US9390965B2 (en) | 2013-12-20 | 2016-07-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Air-gap forming techniques for interconnect structures |
JP6014110B2 (ja) | 2013-12-23 | 2016-10-25 | ダウ グローバル テクノロジーズ エルエルシー | ギャップ充填方法 |
US9246134B2 (en) | 2014-01-20 | 2016-01-26 | 3M Innovative Properties Company | Lamination transfer films for forming articles with engineered voids |
TWI555119B (zh) * | 2014-03-21 | 2016-10-21 | 力晶科技股份有限公司 | 具有氣隙的結構的形成方法 |
KR102312269B1 (ko) * | 2014-04-01 | 2021-10-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 집적된 금속 스페이서 및 에어 갭 인터커넥트 |
KR102190654B1 (ko) * | 2014-04-07 | 2020-12-15 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
KR101572045B1 (ko) * | 2014-04-14 | 2015-11-27 | 한국과학기술원 | 소자 패키징 방법 및 이를 이용한 소자 패키지 |
JP6237429B2 (ja) | 2014-04-14 | 2017-11-29 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
US9401304B2 (en) * | 2014-04-24 | 2016-07-26 | Sandisk Technologies Llc | Patterning method for low-k inter-metal dielectrics and associated semiconductor device |
KR102129602B1 (ko) * | 2014-05-15 | 2020-07-03 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9324604B2 (en) | 2014-07-04 | 2016-04-26 | Rohm And Haas Electronic Materials Llc | Gap-fill methods |
TWI556504B (zh) * | 2014-08-21 | 2016-11-01 | 國立中山大學 | 懸浮式全相位正交耦合器及其製作方法 |
US9312167B1 (en) * | 2014-10-03 | 2016-04-12 | Applied Materials, Inc. | Air-gap structure formation with ultra low-k dielectric layer on PECVD low-k chamber |
US9986702B1 (en) | 2014-12-05 | 2018-06-05 | Agrigenetics, Inc. | Canola inbred restorer line G1934899R |
US10165751B2 (en) | 2014-12-05 | 2019-01-01 | Agrigenetics, Inc. | Canola inbred line G30853A |
US9968047B2 (en) | 2015-03-24 | 2018-05-15 | Agrigenetics, Inc. | Canola hybrid cultivar CL2562968H |
US10314270B2 (en) | 2015-04-01 | 2019-06-11 | Agrigenetics, Inc. | Canola hybrid cultivar G3697124H |
US10306852B2 (en) | 2015-04-15 | 2019-06-04 | Agrigenetics, Inc. | Canola inbred line G1992650A |
US9974262B2 (en) | 2015-04-15 | 2018-05-22 | Agrigenetics, Inc. | Canola inbred restorer line CL134904R |
US9968050B2 (en) | 2015-04-15 | 2018-05-15 | Agrigenetics, Inc. | Canola inbred restorer line G175274R |
US9968051B2 (en) | 2015-04-15 | 2018-05-15 | Agrigenetics, Inc. | Canola hybrid cultivar G2537376H |
US9627403B2 (en) | 2015-04-30 | 2017-04-18 | Sandisk Technologies Llc | Multilevel memory stack structure employing support pillar structures |
US9853043B2 (en) | 2015-08-25 | 2017-12-26 | Sandisk Technologies Llc | Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill material |
US9502471B1 (en) | 2015-08-25 | 2016-11-22 | Sandisk Technologies Llc | Multi tier three-dimensional memory devices including vertically shared bit lines |
WO2017116991A1 (en) | 2015-12-28 | 2017-07-06 | 3M Innovative Properties Company | Article with microstructured layer |
WO2017116996A1 (en) | 2015-12-28 | 2017-07-06 | 3M Innovative Properties Company | Article with microstructured layer |
KR102460075B1 (ko) * | 2016-01-27 | 2022-10-31 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
US9881929B1 (en) | 2016-10-27 | 2018-01-30 | Sandisk Technologies Llc | Multi-tier memory stack structure containing non-overlapping support pillar structures and method of making thereof |
US10056399B2 (en) | 2016-12-22 | 2018-08-21 | Sandisk Technologies Llc | Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the same |
US20180331117A1 (en) | 2017-05-12 | 2018-11-15 | Sandisk Technologies Llc | Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof |
US10510738B2 (en) | 2018-01-17 | 2019-12-17 | Sandisk Technologies Llc | Three-dimensional memory device having support-die-assisted source power distribution and method of making thereof |
US10283493B1 (en) | 2018-01-17 | 2019-05-07 | Sandisk Technologies Llc | Three-dimensional memory device containing bonded memory die and peripheral logic die and method of making thereof |
US10381322B1 (en) | 2018-04-23 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional memory device containing self-aligned interlocking bonded structure and method of making the same |
JP7065741B2 (ja) * | 2018-09-25 | 2022-05-12 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
US10748812B1 (en) | 2019-02-26 | 2020-08-18 | International Business Machines Corporation | Air-gap containing metal interconnects |
US10879260B2 (en) | 2019-02-28 | 2020-12-29 | Sandisk Technologies Llc | Bonded assembly of a support die and plural memory dies containing laterally shifted vertical interconnections and methods for making the same |
JP7169910B2 (ja) * | 2019-03-11 | 2022-11-11 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
US11251261B2 (en) * | 2019-05-17 | 2022-02-15 | Micron Technology, Inc. | Forming a barrier material on an electrode |
US10950493B1 (en) | 2019-09-19 | 2021-03-16 | International Business Machines Corporation | Interconnects having air gap spacers |
CN112563143B (zh) * | 2019-09-25 | 2022-03-22 | 长鑫存储技术有限公司 | 半导体结构制造方法 |
US20210213650A1 (en) * | 2020-01-15 | 2021-07-15 | GM Global Technology Operations LLC | Mold having near-surface channels formed therein and method of making the same |
JP7390194B2 (ja) | 2020-01-17 | 2023-12-01 | 東京エレクトロン株式会社 | エアギャップ形成方法 |
JP2022065303A (ja) * | 2020-10-15 | 2022-04-27 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1195432A (ja) * | 1997-09-24 | 1999-04-09 | Hitachi Chem Co Ltd | ネガ型レジスト組成物及びネガ型レジスト像の製造法 |
JP2001514798A (ja) * | 1997-01-21 | 2001-09-11 | ザ ビー.エフ.グッドリッチ カンパニー | 超低静電容量配線のためのエアギャップを備える半導体装置の製造 |
JP2002124513A (ja) * | 2000-10-13 | 2002-04-26 | Fujitsu Ltd | 基板の平坦化方法、半導体装置及びその製造方法 |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4265794A (en) * | 1976-01-07 | 1981-05-05 | Ford Motor Company | Moldable mixture of sacrificial binder and sinterable particulate solids |
JPS5412500A (en) | 1977-06-30 | 1979-01-30 | Matsushita Electric Ind Co Ltd | Film material providing high electrostatic capacitance |
US4667004A (en) * | 1985-12-23 | 1987-05-19 | Shell Oil Company | Olefinic benzocyclobutene polymers |
JPS647540U (ja) | 1987-06-30 | 1989-01-17 | ||
JPS647540A (en) * | 1987-06-30 | 1989-01-11 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH01235254A (ja) * | 1988-03-15 | 1989-09-20 | Nec Corp | 半導体装置及びその製造方法 |
US4987101A (en) * | 1988-12-16 | 1991-01-22 | International Business Machines Corporation | Method for providing improved insulation in VLSI and ULSI circuits |
CA2037801C (en) * | 1990-04-16 | 2001-04-24 | Thomas E. Orlowski | Fibrillated pultruded electrical component |
JPH05145094A (ja) * | 1991-11-22 | 1993-06-11 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5489865A (en) * | 1992-02-28 | 1996-02-06 | Media Vision, Inc. | Circuit for filtering asynchronous metastability of cross-coupled logic gates |
US5324683A (en) * | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
US5420441A (en) * | 1993-11-23 | 1995-05-30 | Eastman Kodak Company | Automated technique for calibrating a storage phosphor reader |
US5461003A (en) * | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
US5567982A (en) * | 1994-09-30 | 1996-10-22 | Bartelink; Dirk J. | Air-dielectric transmission lines for integrated circuits |
US5877895A (en) * | 1995-03-20 | 1999-03-02 | Catalina Coatings, Inc. | Multicolor interference coating |
KR100440418B1 (ko) * | 1995-12-12 | 2004-10-20 | 텍사스 인스트루먼츠 인코포레이티드 | 저압,저온의반도체갭충전처리방법 |
US5994776A (en) * | 1996-01-11 | 1999-11-30 | Advanced Micro Devices, Inc. | Interlevel dielectric with multiple air gaps between conductive lines of an integrated circuit |
US5909637A (en) * | 1996-09-20 | 1999-06-01 | Sharp Microelectronics Technology, Inc. | Copper adhesion to a diffusion barrier surface and method for same |
US5923074A (en) * | 1996-12-03 | 1999-07-13 | Texas Instruments Incorporated | Low capacitance interconnect structure for integrated circuits using decomposed polymers |
US6150010A (en) * | 1997-03-04 | 2000-11-21 | Texas Instruments Incorporated | Integrated circuit insulator |
US6141072A (en) * | 1997-04-04 | 2000-10-31 | Georgia Tech Research Corporation | System and method for efficient manufacturing of liquid crystal displays |
JP2962272B2 (ja) * | 1997-04-18 | 1999-10-12 | 日本電気株式会社 | 半導体装置の製造方法 |
US6492732B2 (en) * | 1997-07-28 | 2002-12-10 | United Microelectronics Corp. | Interconnect structure with air gap compatible with unlanded vias |
US6333255B1 (en) * | 1997-08-21 | 2001-12-25 | Matsushita Electronics Corporation | Method for making semiconductor device containing low carbon film for interconnect structures |
CN1278308A (zh) * | 1997-09-17 | 2000-12-27 | 佛姆法克特股份有限公司 | 通过适度热处理金属沉积物制造材料性能得到改善的结构的方法 |
US6016000A (en) * | 1998-04-22 | 2000-01-18 | Cvc, Inc. | Ultra high-speed chip semiconductor integrated circuit interconnect structure and fabrication method using free-space dielectrics |
US6124198A (en) * | 1998-04-22 | 2000-09-26 | Cvc, Inc. | Ultra high-speed chip interconnect using free-space dielectrics |
US6284675B1 (en) * | 1998-05-27 | 2001-09-04 | Texas Instruments Incorporated | Method of forming integrated circuit dielectric by evaporating solvent to yield phase separation |
RU2195050C2 (ru) * | 1998-06-05 | 2002-12-20 | Джорджиэ Тек Рисеч Копэрейшн | Способ получения пористой изоляционной композиции (варианты), композиция, используемая для получения пористого изоляционного материала (варианты), и полупроводниковое устройство |
US6528426B1 (en) * | 1998-10-16 | 2003-03-04 | Texas Instruments Incorporated | Integrated circuit interconnect and method |
US6211561B1 (en) * | 1998-11-16 | 2001-04-03 | Conexant Systems, Inc. | Interconnect structure and method employing air gaps between metal lines and between metal layers |
US6078088A (en) * | 1999-01-05 | 2000-06-20 | Advanced Micro Devices, Inc. | Low dielectric semiconductor device with rigid lined interconnection system |
US6071805A (en) * | 1999-01-25 | 2000-06-06 | Chartered Semiconductor Manufacturing, Ltd. | Air gap formation for high speed IC processing |
US6342722B1 (en) * | 1999-08-05 | 2002-01-29 | International Business Machines Corporation | Integrated circuit having air gaps between dielectric and conducting lines |
US6420441B1 (en) * | 1999-10-01 | 2002-07-16 | Shipley Company, L.L.C. | Porous materials |
US6231743B1 (en) * | 2000-01-03 | 2001-05-15 | Motorola, Inc. | Method for forming a semiconductor device |
US6261942B1 (en) * | 2000-01-24 | 2001-07-17 | Chartered Semiconductor Manufacturing Ltd. | Dual metal-oxide layer as air bridge |
US6423465B1 (en) * | 2000-01-28 | 2002-07-23 | International Business Machines Corporation | Process for preparing a patterned continuous polymeric brush on a substrate surface |
US6815329B2 (en) * | 2000-02-08 | 2004-11-09 | International Business Machines Corporation | Multilayer interconnect structure containing air gaps and method for making |
US6329062B1 (en) * | 2000-02-29 | 2001-12-11 | Novellus Systems, Inc. | Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits |
US6287979B1 (en) * | 2000-04-17 | 2001-09-11 | Chartered Semiconductor Manufacturing Ltd. | Method for forming an air gap as low dielectric constant material using buckminsterfullerene as a porogen in an air bridge or a sacrificial layer |
TW452921B (en) | 2000-05-30 | 2001-09-01 | Taiwan Semiconductor Mfg | Method for forming etching stop layer in dual damascene processing |
US6423629B1 (en) * | 2000-05-31 | 2002-07-23 | Kie Y. Ahn | Multilevel copper interconnects with low-k dielectrics and air gaps |
US6271273B1 (en) | 2000-07-14 | 2001-08-07 | Shipley Company, L.L.C. | Porous materials |
MY128644A (en) * | 2000-08-31 | 2007-02-28 | Georgia Tech Res Inst | Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same |
US6413852B1 (en) * | 2000-08-31 | 2002-07-02 | International Business Machines Corporation | Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material |
TWI227043B (en) * | 2000-09-01 | 2005-01-21 | Koninkl Philips Electronics Nv | Method of manufacturing a semiconductor device |
EP1197998A3 (en) | 2000-10-10 | 2005-12-21 | Shipley Company LLC | Antireflective porogens |
US6380106B1 (en) * | 2000-11-27 | 2002-04-30 | Chartered Semiconductor Manufacturing Inc. | Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structures |
TW462122B (en) * | 2000-12-18 | 2001-11-01 | United Microelectronics Corp | Air gap semiconductor structure and the manufacturing method thereof |
EP1260863A1 (en) * | 2001-05-23 | 2002-11-27 | Scandinavian Micro Biodevices | Micropatterning of plasma polymerized coatings |
US6958123B2 (en) * | 2001-06-15 | 2005-10-25 | Reflectivity, Inc | Method for removing a sacrificial material with a compressed fluid |
US7119418B2 (en) * | 2001-12-31 | 2006-10-10 | Advanced Technology Materials, Inc. | Supercritical fluid-assisted deposition of materials on semiconductor substrates |
US6835616B1 (en) * | 2002-01-29 | 2004-12-28 | Cypress Semiconductor Corporation | Method of forming a floating metal structure in an integrated circuit |
JP4531400B2 (ja) * | 2002-04-02 | 2010-08-25 | ダウ グローバル テクノロジーズ インコーポレイティド | エアギャップ含有半導体デバイスの製造方法及び得られる半導体デバイス |
US6734094B2 (en) * | 2002-04-29 | 2004-05-11 | Intel Corporation | Method of forming an air gap within a structure by exposing an ultraviolet sensitive material to ultraviolet radiation |
US6798029B2 (en) * | 2003-05-09 | 2004-09-28 | International Business Machines Corporation | Method of fabricating micro-electromechanical switches on CMOS compatible substrates |
US7838072B2 (en) * | 2005-01-26 | 2010-11-23 | Tokyo Electron Limited | Method and apparatus for monolayer deposition (MLD) |
-
2003
- 2003-09-11 EP EP03255695A patent/EP1398831A3/en not_active Withdrawn
- 2003-09-11 JP JP2003320111A patent/JP4574145B2/ja not_active Expired - Fee Related
- 2003-09-12 TW TW092125167A patent/TWI255003B/zh not_active IP Right Cessation
- 2003-09-12 CN CNB031255795A patent/CN1312754C/zh not_active Expired - Fee Related
- 2003-09-13 US US10/661,051 patent/US7256127B2/en not_active Expired - Lifetime
- 2003-09-13 KR KR1020030063487A patent/KR101032003B1/ko active IP Right Grant
-
2007
- 2007-08-13 US US11/891,857 patent/US7723850B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001514798A (ja) * | 1997-01-21 | 2001-09-11 | ザ ビー.エフ.グッドリッチ カンパニー | 超低静電容量配線のためのエアギャップを備える半導体装置の製造 |
JPH1195432A (ja) * | 1997-09-24 | 1999-04-09 | Hitachi Chem Co Ltd | ネガ型レジスト組成物及びネガ型レジスト像の製造法 |
JP2002124513A (ja) * | 2000-10-13 | 2002-04-26 | Fujitsu Ltd | 基板の平坦化方法、半導体装置及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11527477B2 (en) | 2020-03-16 | 2022-12-13 | Kioxia Corporation | Semiconductor device and method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US7256127B2 (en) | 2007-08-14 |
US7723850B2 (en) | 2010-05-25 |
US20040137728A1 (en) | 2004-07-15 |
KR20040024524A (ko) | 2004-03-20 |
CN1312754C (zh) | 2007-04-25 |
US20080038518A1 (en) | 2008-02-14 |
CN1495877A (zh) | 2004-05-12 |
KR101032003B1 (ko) | 2011-05-02 |
TW200414413A (en) | 2004-08-01 |
EP1398831A3 (en) | 2008-02-20 |
JP2004266244A (ja) | 2004-09-24 |
EP1398831A2 (en) | 2004-03-17 |
TWI255003B (en) | 2006-05-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4574145B2 (ja) | エアギャップ形成 | |
EP1632956A1 (en) | Compositions comprising an organic polysilica and an arylgroup-capped polyol, and methods for preparing porous organic polysilica films | |
US7018678B2 (en) | Electronic device manufacture | |
EP1172823B1 (en) | Porous materials | |
JP4758949B2 (ja) | 多孔性有機ポリシリカ誘電体形成用の組成物 | |
KR20110014540A (ko) | 전자 디바이스 제조 | |
JP4594988B2 (ja) | 金属間誘電体として用いられる低k及び超低kの有機シリケート膜の疎水性の回復 | |
JP4894153B2 (ja) | 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 | |
TW200428632A (en) | Repair and restoration of damaged dielectric materials and films | |
JP2004186610A (ja) | 絶縁膜 | |
US8263316B2 (en) | Electronic device manufacture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060823 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060823 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061016 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090330 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20090629 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20090629 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20090713 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090730 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100728 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100818 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4574145 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130827 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140827 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |