TWI346359B - Hybrid plasma reactor - Google Patents

Hybrid plasma reactor

Info

Publication number
TWI346359B
TWI346359B TW096109435A TW96109435A TWI346359B TW I346359 B TWI346359 B TW I346359B TW 096109435 A TW096109435 A TW 096109435A TW 96109435 A TW96109435 A TW 96109435A TW I346359 B TWI346359 B TW I346359B
Authority
TW
Taiwan
Prior art keywords
plasma reactor
hybrid plasma
hybrid
reactor
plasma
Prior art date
Application number
TW096109435A
Other languages
English (en)
Other versions
TW200739723A (en
Inventor
Weon-Mook Lee
Original Assignee
Dms Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dms Co Ltd filed Critical Dms Co Ltd
Publication of TW200739723A publication Critical patent/TW200739723A/zh
Application granted granted Critical
Publication of TWI346359B publication Critical patent/TWI346359B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW096109435A 2006-03-21 2007-03-20 Hybrid plasma reactor TWI346359B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060025663A KR100777151B1 (ko) 2006-03-21 2006-03-21 하이브리드형 플라즈마 반응장치

Publications (2)

Publication Number Publication Date
TW200739723A TW200739723A (en) 2007-10-16
TWI346359B true TWI346359B (en) 2011-08-01

Family

ID=38532112

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096109435A TWI346359B (en) 2006-03-21 2007-03-20 Hybrid plasma reactor

Country Status (4)

Country Link
US (1) US20070221331A1 (zh)
KR (1) KR100777151B1 (zh)
CN (1) CN101043784B (zh)
TW (1) TWI346359B (zh)

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TWI697261B (zh) * 2018-05-22 2020-06-21 呈睿國際股份有限公司 感應耦合電漿蝕刻系統及其切換式匹配裝置

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EP2122657B8 (en) 2008-03-20 2011-06-22 Ruhr-Universität Bochum Method for controlling ion energy in radio frequency plasmas
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US8652298B2 (en) * 2011-11-21 2014-02-18 Lam Research Corporation Triode reactor design with multiple radiofrequency powers
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CN103854945A (zh) * 2012-12-05 2014-06-11 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体设备及其反应腔室
CN104754850B (zh) * 2013-12-31 2019-11-05 中微半导体设备(上海)股份有限公司 一种电感耦合型等离子处理器
CN104862671B (zh) 2014-02-24 2019-08-23 北京北方华创微电子装备有限公司 一种反应腔室及等离子体加工设备
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US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
WO2018148189A1 (en) * 2017-02-10 2018-08-16 Applied Materials, Inc. Method and apparatus for low temperature selective epitaxy in a deep trench
CN107256822B (zh) * 2017-07-27 2019-08-23 北京北方华创微电子装备有限公司 上电极组件及反应腔室
US10784091B2 (en) 2017-09-29 2020-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Process and related device for removing by-product on semiconductor processing chamber sidewalls
CN108093551B (zh) * 2017-12-20 2020-03-13 西安交通大学 用于激励产生均匀放电高活性等离子体的复合电源装置
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
CN112805920A (zh) 2018-08-10 2021-05-14 鹰港科技有限公司 用于rf等离子体反应器的等离子体鞘控制
EP3994716A4 (en) * 2019-07-02 2023-06-28 Eagle Harbor Technologies, Inc. Nanosecond pulser rf isolation
JP7285377B2 (ja) 2019-12-24 2023-06-01 イーグル ハーバー テクノロジーズ，インク． プラズマシステム用ナノ秒パルサｒｆ絶縁
CN110888380B (zh) * 2019-12-25 2021-11-16 北京北方华创微电子装备有限公司 一种半导体设备中滤波电路的控制方法和半导体设备
CN111192812B (zh) * 2020-01-07 2022-11-25 北京北方华创微电子装备有限公司 电感耦合装置和半导体处理设备
KR102482734B1 (ko) * 2020-11-13 2022-12-30 충남대학교산학협력단 고주파 펄스 소스 및 저주파 펄스 바이어스를 이용한 플라즈마 극고종횡비 식각 방법
CN113113282B (zh) * 2021-04-01 2023-11-14 北京北方华创微电子装备有限公司 上电极电源功率调节方法、半导体工艺设备
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WO2023042857A1 (ja) * 2021-09-15 2023-03-23 東京エレクトロン株式会社 プラズマ処理装置
TWI801058B (zh) * 2021-12-23 2023-05-01 明遠精密科技股份有限公司 一種複合式電漿源及其運作方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI697261B (zh) * 2018-05-22 2020-06-21 呈睿國際股份有限公司 感應耦合電漿蝕刻系統及其切換式匹配裝置

Also Published As

Publication number Publication date
CN101043784A (zh) 2007-09-26
TW200739723A (en) 2007-10-16
US20070221331A1 (en) 2007-09-27
KR100777151B1 (ko) 2007-11-16
CN101043784B (zh) 2011-01-26
KR20070096205A (ko) 2007-10-02

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees