FR2842388B1 - Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance - Google Patents
Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissanceInfo
- Publication number
- FR2842388B1 FR2842388B1 FR0208729A FR0208729A FR2842388B1 FR 2842388 B1 FR2842388 B1 FR 2842388B1 FR 0208729 A FR0208729 A FR 0208729A FR 0208729 A FR0208729 A FR 0208729A FR 2842388 B1 FR2842388 B1 FR 2842388B1
- Authority
- FR
- France
- Prior art keywords
- high power
- etching substrate
- inductive plasma
- inductive
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0208729A FR2842388B1 (fr) | 2002-07-11 | 2002-07-11 | Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance |
US10/516,455 US20060060566A1 (en) | 2002-07-11 | 2003-07-10 | Method and device for substrate etching with very high power inductively coupled plasma |
JP2004520755A JP2005532694A (ja) | 2002-07-11 | 2003-07-10 | 非常に高い出力の誘導結合プラズマを用いた基板エッチングの方法および装置 |
EP03763951A EP1529305A2 (fr) | 2002-07-11 | 2003-07-10 | Procede et dispositif pour la gravure de substrat par plasma inducatif a tres forte puissance |
PCT/FR2003/002157 WO2004008816A2 (fr) | 2002-07-11 | 2003-07-10 | Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0208729A FR2842388B1 (fr) | 2002-07-11 | 2002-07-11 | Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2842388A1 FR2842388A1 (fr) | 2004-01-16 |
FR2842388B1 true FR2842388B1 (fr) | 2004-09-24 |
Family
ID=29763739
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0208729A Expired - Fee Related FR2842388B1 (fr) | 2002-07-11 | 2002-07-11 | Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060060566A1 (fr) |
EP (1) | EP1529305A2 (fr) |
JP (1) | JP2005532694A (fr) |
FR (1) | FR2842388B1 (fr) |
WO (1) | WO2004008816A2 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2842387B1 (fr) * | 2002-07-11 | 2005-07-08 | Cit Alcatel | Chemisage chauffant pour reacteur de gravure plasma, procede de gravure pour sa mise en oeuvre |
KR100777151B1 (ko) * | 2006-03-21 | 2007-11-16 | 주식회사 디엠에스 | 하이브리드형 플라즈마 반응장치 |
US8987678B2 (en) | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
US8642974B2 (en) * | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
US20130048082A1 (en) * | 2011-08-22 | 2013-02-28 | Mirzafer Abatchev | System, method and apparatus for real time control of rapid alternating processes (rap) |
US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
RU2503079C1 (ru) * | 2012-04-24 | 2013-12-27 | Евгений Владимирович Берлин | Генератор плазмы (варианты) |
KR20160024914A (ko) * | 2013-07-26 | 2016-03-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
US10128082B2 (en) | 2015-07-24 | 2018-11-13 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques to treat substrates using directional plasma and point of use chemistry |
US9706634B2 (en) * | 2015-08-07 | 2017-07-11 | Varian Semiconductor Equipment Associates, Inc | Apparatus and techniques to treat substrates using directional plasma and reactive gas |
US10141161B2 (en) | 2016-09-12 | 2018-11-27 | Varian Semiconductor Equipment Associates, Inc. | Angle control for radicals and reactive neutral ion beams |
US10730082B2 (en) * | 2016-10-26 | 2020-08-04 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for differential in situ cleaning |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04199816A (ja) * | 1990-11-29 | 1992-07-21 | Mitsubishi Electric Corp | プラズマcvd装置 |
US5456796A (en) * | 1993-06-02 | 1995-10-10 | Applied Materials, Inc. | Control of particle generation within a reaction chamber |
US5716534A (en) * | 1994-12-05 | 1998-02-10 | Tokyo Electron Limited | Plasma processing method and plasma etching method |
US6951828B2 (en) * | 1995-11-10 | 2005-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Plasma CVD method |
US6121163A (en) * | 1996-02-09 | 2000-09-19 | Applied Materials, Inc. | Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface |
US5902494A (en) * | 1996-02-09 | 1999-05-11 | Applied Materials, Inc. | Method and apparatus for reducing particle generation by limiting DC bias spike |
JPH10125627A (ja) * | 1996-10-24 | 1998-05-15 | Fujitsu Ltd | 半導体装置の製造方法および高融点金属ナイトライド膜の形成方法 |
US6001268A (en) * | 1997-06-05 | 1999-12-14 | International Business Machines Corporation | Reactive ion etching of alumina/TiC substrates |
US6267121B1 (en) * | 1999-02-11 | 2001-07-31 | Taiwan Semiconductor Manufacturing Company | Process to season and determine condition of a high density plasma etcher |
TW544849B (en) * | 2000-08-29 | 2003-08-01 | Samsung Electronics Co Ltd | Method for manufacturing semiconductor device |
WO2003018867A1 (fr) * | 2001-08-29 | 2003-03-06 | Applied Materials, Inc. | Traitement de semi-conducteurs mettant en oeuvre une source gazeuse couplee de façon efficiente |
JP4024053B2 (ja) * | 2002-02-08 | 2007-12-19 | キヤノンアネルバ株式会社 | 高周波プラズマ処理方法及び高周波プラズマ処理装置 |
US6946054B2 (en) * | 2002-02-22 | 2005-09-20 | Tokyo Electron Limited | Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing |
US8608422B2 (en) * | 2003-10-08 | 2013-12-17 | Tokyo Electron Limited | Particle sticking prevention apparatus and plasma processing apparatus |
-
2002
- 2002-07-11 FR FR0208729A patent/FR2842388B1/fr not_active Expired - Fee Related
-
2003
- 2003-07-10 EP EP03763951A patent/EP1529305A2/fr not_active Withdrawn
- 2003-07-10 WO PCT/FR2003/002157 patent/WO2004008816A2/fr active Application Filing
- 2003-07-10 JP JP2004520755A patent/JP2005532694A/ja active Pending
- 2003-07-10 US US10/516,455 patent/US20060060566A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2004008816A8 (fr) | 2004-05-27 |
US20060060566A1 (en) | 2006-03-23 |
EP1529305A2 (fr) | 2005-05-11 |
WO2004008816A3 (fr) | 2005-03-10 |
WO2004008816A2 (fr) | 2004-01-22 |
FR2842388A1 (fr) | 2004-01-16 |
JP2005532694A (ja) | 2005-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2842388B1 (fr) | Procede et dispositif pour la gravure de substrat par plasma inductif a tres forte puissance | |
FR2796757B1 (fr) | Procede de fabrication de substrat soi et dispositif a semiconducteur | |
AU2003270040A1 (en) | Fabrication method for a monocrystalline semiconductor layer on a substrate | |
WO2003090278A3 (fr) | Systeme double face d'evacuation de la chaleur | |
AU2002359736A1 (en) | Method and apparatus for mounting a lidless semiconductor device | |
AU2003238305A1 (en) | Method and apparatus for supporting a substrate | |
TW200500498A (en) | Method for etching an aluminum layer using an amorphous carbon mask | |
AU2003234287A1 (en) | Method and apparatus for treating a substrate with an ozone-solvent solution iii | |
TW200512801A (en) | Fabrication of semiconductor devices | |
TWI348777B (en) | A semiconductor device having an organic anti-reflective coating (arc) and method therefor | |
FR2839375B1 (fr) | Dispositif a circuit integre a modes de communication multiples et procede pour le faire fonctionner | |
IL157737A (en) | Method for printing an image on a printing substrate and device for inputting energy to a printing-ink carrier | |
AU2003219436A1 (en) | High power semiconductor laser diode and method for making such a diode | |
FR2844099B1 (fr) | Dispositif semiconducteur de puissance quasi-vertical sur substrat composite | |
SG106643A1 (en) | Method and device for correcting pattern film on a semiconductor substrate | |
AU2003294733A1 (en) | Device and method for processing electric circuit substrates by laser | |
DE50303868D1 (de) | Verfahren und vorrichtung zum einschalten eines zwischen kapazitiven elementen angeordneten leistungsschalters | |
AU2003248524A1 (en) | Method and apparatus for switching an optical beam between first and second waveguides in a semiconductor substrate layer | |
FR2883276B1 (fr) | Procede et dispositif pour deplacer un element a entrainer utilisant un element actionneur forme par gravure dans un materiau semi-conducteur | |
FR2853779B1 (fr) | Procede et dispositif pour le reglage de la puissance dans une centrale a accumulation par pompage | |
ITMI20020931A0 (it) | Metodo per fabbricare circuiti elettronici integrati su un substrato semiconduttore | |
AU2003214327A1 (en) | Treatment of organic pollution on an inorganic substrate | |
BR0202672B1 (pt) | método e aparelho para aplicar um polìmero em um substrato. | |
AU2002255557A1 (en) | Lithography method for forming semiconductor devices on a wafer and apparatus | |
SG115528A1 (en) | Plasma etching method and apparatus for manufacturing a semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
TP | Transmission of property | ||
ST | Notification of lapse |
Effective date: 20120330 |