TWI304615B

TWI304615B -

Info

Publication number: TWI304615B
Application number: TW091124290A
Authority: TW
Original assignee: Mitsubishi Gas Chemical Co
Priority date: 2001-10-22
Filing date: 2002-10-22
Publication date: 2008-12-21
Also published as: CN100350570C; JPWO2003036707A1; KR100944300B1; CN1575509A; WO2003036707A1; KR20040045819A

Description

1304615 捌、聲明事項 ZZI主張專利法第二十四條第-項優先權：【格式請依：受理國家（地區）；日期；案號順序註記】 1.日本 2001.10.22 特願 2001-324146_ 玖、發明說明 f發i說«1明：發明所屬之技術領域、先前技術、內容、實施方式及圖式簡單說明）一、發明所屬之技術領域技術領域本發明關於液晶顯示裝置等的訊號配線中所用的積層配線之形成方法，更詳而言之，關於基板上的鋁系金屬層與鉬等的高熔點金屬層之積層膜的蝕刻方 *法，及關於可靠性高的積層配線之形成方法。 A先前技術背景技術就於玻璃基板上排列矩陣狀的ITO(銦錫氧化物）等的透明電極，以TFT(薄膜電晶體）驅動它的主動矩陣型液晶顯示裝置而言，採用以驅動TFT所需的閘電極及由此閘電極所延伸的閘極配線或數據配線等在同樣的基板上所形成的TFT面板構造。茲參照第1圖所示最普通的逆向交錯型TFT面板構造之示意剖面圖來說明。藉由在玻璃基板1上形成順錐形的閘電極2，經由閘極絕緣膜3和i型半導體層4、η型半導體層5介於之間而使得源電極6和汲電極7與閘電極2成對向配置著，而形成TFT。一般的】型半導體層4係由a-Si 所形成，而η型半導體層5係由含η型雜質的n + a-Si 1304615 電池反應，故係極困難的。因此，於特開平6 - 1 04 24 1號公報中記載，對鉬/鋁系積層膜使用上述混合酸，以作爲濕蝕刻的手段，控制積層膜的膜厚比，然而並未達成根本的解決。鑒於上述狀況，故希望有能將上述積層膜蝕刻成良好的順錐形之優良蝕刻方法。乓發明內容發明的揭示本發明之目的爲解決上述先前技術的種種問題點，而提供一種蝕刻方法，其將鋁系金屬膜，尤其鋁系金屬膜與鉬等的高熔點金屬膜之積層膜，蝕刻成良好的順錐形。本案發明人等爲達成上述目的而專心致力地檢討，結果發現使用由含有磷酸、硝酸、有機酸和陽離子成分的水溶液所組成的蝕刻液來触刻含有至少一個銘系金屬膜與至少一個鉬系高熔點金屬膜的積層膜時，藉由將蝕刻液中的水分含量保持在1 0〜3 0重量％之間，則能蝕刻出良好的順錐形，終於完成本發明。 S實施方式 ‘ 發明實施的最佳形態本發明中所使用的蝕刻液爲含有磷酸、硝酸、有機酸和陽離子成分的水溶液。磷酸的濃度係爲濕蝕刻液的 5 0〜8 0重量％，較佳 60〜75重量％。磷酸主要用於鋁系金屬膜的蝕刻，當低於5 0重量％時，鋁系金屬膜的蝕刻速度變慢，又若 1304615 等的烷醇胺類；乙二胺、丙二胺、三亞甲二胺、四亞胺二胺等的多胺類；吡咯、吡咯啉、吡咯啶、嗎啉等的環狀胺類；及氫氧化四甲銨、氫氧化四乙銨、氫氧化三甲基（2 -羥乙基）銨等的四級銨氫氧化物。又，除了上述銨、胺、四級銨氫氧化物，亦可使用氫氧化鈉、氫氧化鉀等的鹼金屬之鹽作爲陽離子生成成分。在上述陽離子生成成分中，銨鹽係特佳的。上述陽離子生成成分的濃度係爲濕蝕刻液的 0.1〜20重量％，較佳1〜10重量％。當低於0.1重量％時，蝕刻液的壽命變短，而若超過2 0重量％，則鉬系金屬膜、鋁系金屬膜的蝕刻速度變慢，故係不宜的。本發明中，濕蝕刻液的最佳水分含量爲根據所蝕刻的金屬膜之種類、組成而在固定的範圍內，實際上必須根據所使用的各金屬來適當決定，但通常在1 0〜3 0 重量％的範圍內。例如，在濕蝕刻鉬等的高熔點金屬膜/鋁系金屬膜時，水分含量爲 15〜20重量％，較佳 1 6〜1 9重量％。在濕蝕刻鉬等的高熔點金屬膜/鋁系金屬膜/鉬等的高熔點金屬膜時，水分含量爲1 8〜2 3重量 %，較佳19〜22重量％。不特別限制蝕刻條件，可採用習知的條件。例如，可在常溫（2 0〜2 5 °C )〜5 0 °C使金屬膜與濕鈾刻液接觸 0.5〜3分鐘，但蝕刻條件較佳爲由所使用的積層膜之種類、厚度等作考量而適當地決定。實施例1 使用第4(a)〜（〇圖來詳細說明。首先，濺鍍鋁合金 1304615 (9 9 · 1重量％鋁和〇 · 9重量％锆），接著鉬合金（8 5重量％鉬和1 5重量％鎢）’以便在TFT玻璃基板1上形成鉬合金膜22(75〇A) /鋁合金膜2丨（7 50人）的積層膜（第4(a) 圖）。於鉬合金/鋁合金積層膜上，塗佈光阻劑23，通過預先準備的圖案光罩曝光後，顯影以形成所欲的光阻圖案（第4(b)圖）。使用上述第4 (b )圖的基板，在以下（1)〜（4 )四種的蝕刻液中於45 °C進行蝕刻直到恰好的蝕刻爲止，以水沖洗後，乾燥，藉由胺系剝離液來剝離光阻2 3後，以電子顯微鏡（SEM)進行觀察。其結果如第4(c)圖中所示的樣子，係得到良好的順錐形鉬合金/鋁合金積層膜。 (1) 磷酸6 5重量％，硝酸9重量％，醋酸5重量％，氫氧化銨2重量％，水分1 9重量％， (2) 磷酸66重量％，硝酸9重量％，醋酸5重量％，氫氧化鏡2重量％，水分1 8重量％， (3) 磷酸67重量％，硝酸9重量％，醋酸5重量％，氫氧化錢2重量％，水分1 7重量％， (4) 磷酸68重量％，硝酸9重量％，醋酸5重量％，氫氧化銨2重量％，水分1 6重量％。比較例 1 使用上述第4 ( b )圖的基板，在以下（5 )〜（6 )兩種的飩刻液中於4 5 °C進行蝕刻直到恰好的蝕刻爲止，以水沖洗後，乾燥，藉由胺系剝離液來剝離光阻23後，以電子顯微鏡（SEM)進行觀察。其結果如第5圖中所示地成 1304615 爲非錐形之積層膜，而不能得到第4(c)圖中所示之順錐形鉬合金/鋁合金積層膜。 (5) 磷酸6 2重量％，硝酸9重量％，醋酸5重量％，氫氧化鏡2重量％，水分2 2重量％， (6) 磷酸71重量％，硝酸9重量％，醋酸5重量％，氫氧化錢2重量％，水分1 3重量％，實施例2 使用第6(a)〜（〇圖來詳細說明。首先，濺鍍鉬合金（85 重量％鉬和1 5重量％鎢）、鋁合金（9 9 . 1重量％鋁和0.9 重量％銷），接著鉬合金（85重量％鉬和15重量％鎢），以便在TFT玻璃基板1上形成鉬合金膜2 2 (7 5 0 A)/鋁合金膜 21(150〇A)/鉬合金膜 22(75〇A)的積層膜（第 6(a) 圖）。於積層膜上，塗佈光阻劑 2 3，通過預先準備的圖案光罩曝光後，顯影以形成所欲的光阻圖案（第6(b) 圖）。使用上述第6(b)圖的基板，在以下（7)〜（10)四種的蝕刻液中於4 5 °C進行蝕刻直到恰好的蝕刻爲止，以水沖洗後，乾燥，藉由胺系剝離液來剝離光阻2 3後，以電子顯微鏡（SEM)進行觀察。其結果如第6(c)圖中所示的樣子，係得到良好的順錐形鉬合金/鋁合金/鉬合金積層膜。 ▲ (7) 憐酸6 4重量％，硝酸7重量％，醋酸5重量％，氧氧化銨2重量％，水分22重量％， (8) 磷酸6 5重量％，硝酸7重量％，醋酸5重量％，氫氧化銨2重量％，水分2 1重量％， 1304615 (9)磷酸6 6重量％，硝酸7重量％，醋酸5重量％，氫氧化銨2重量％，水分2 0重量％， (1 0)磷酸6 7重量％，硝酸7重量％，醋酸5重量％，氫氧化銨2重量％，水分1 9重量％。實施例3 使用上述第6(b)圖的基板，在以下（1 1)〜（14)四種的蝕刻液中於 4 5 °C進行蝕刻直到恰好的蝕刻爲止，以水沖洗後，乾燥，藉由胺系剝離液來剝離光阻2 3後，以電子顯微鏡（SEM)進行觀察。其結果如第6(c)圖中所示的樣子，係得到良好的順錐形鉬合金/鋁合金/鉬合金積層膜。 (1 1)磷酸6 3重量％，硝酸8重量％，醋酸5重量％，氫氧化錢2重量％’水分22重量％’ (12)磷酸64重量％，硝酸8重量％，醋酸5重量％，氫氧化錢2重量％，水分2 1重量％， (1 3)磷酸6 5重量％，硝酸8重量％，醋酸5重量％，氫氧化銨2重量％，水分20重量％， (1 4)磷酸6 6重量％，硝酸8重量％，醋酸5重量％，氫氧化銨2重量％，水分1 9重量％。實施例4 使用上述第6(b)圖的基板，在以下（15)〜（18)四種的蝕刻液中於 4 5 °C進行蝕刻直到恰好的蝕刻爲止，以水沖洗後，乾燥，藉由胺系剝離液來剝離光阻2 3後，以電子顯微鏡（SEM)進行觀察。其結果如第6(c)圖中所示的樣子，係得到良好的順錐形鉬合金/鋁合金/鉬 1304615 示地成爲非錐形之積層膜，而不能得到第6(c)圖中所示之順錐形鉬合金/鋁合金/鉬合金積層膜。 (2 1 )磷酸6 0重量％，硝酸8重量％，丙酸5重量％，氫氧化錢2重量％，水分25重量％， (2 2)磷酸6 9重量％，硝酸8重量％，丙酸5重量％，氫氧化錢2重量％，水分1 6重量％，產業上的利用可能性藉由使用本發明的蝕刻方法，可以將鋁系金屬膜，特別是鋁系金屬膜與鉬系高熔點金屬膜的積層膜，濕蝕刻成良好的順錐形。 E圖式簡單說明第1圖係一般的逆向交錯型TFT面板構造之示意剖面圖。第2圖顯示在低電阻的鋁系金屬配線的上層，積層高熔點金屬配線而形成的積層構造之示意圖。第3圖顯示在低電阻的鋁系金屬配線的上層、下層之兩面，積層鉬系高熔點金屬配線而形成的積層構造之示意圖。第 4圖顯示順錐形的鋁系金屬配線/鉬系高熔點金屬配線積層構造之形成樣子的工程圖。第 5圖顯示非錐形的鋁系金屬配線/鉬系高熔點金屬配線積層構造之示意圖。第 6圖顯示順錐形的鉬系高熔點金屬配線/鋁系金屬配線/鉬系高熔點金屬配線積層構造之形成樣子的工程圖。 1304615 修正頁第7圖顯示非錐形的鉬系高熔點金屬配線/鋁系金屬配線/鉬系高熔點金屬配線積層構造之示意圖。六、主要元件符號說明1304615 捌, Declaration Matters ZZI advocates Article 24 of the Patent Law - Priority: [Format please: Accepting country (region); date; case number note] 1. Japan 2001.10.22 Special wish 2001-324146_ 玖The invention is related to the technical field of the invention, the prior art, the content, the embodiment, and the drawings. More specifically, the method of forming the laminated wiring used for the aluminum-based metal layer on the substrate and the high-melting-point metal layer such as molybdenum, and the method for forming the laminated wiring having high reliability . BACKGROUND OF THE INVENTION A transparent electrode such as a matrix of ITO (Indium Tin Oxide) is arranged on a glass substrate, and an active matrix type liquid crystal display device in which TFT (thin film transistor) is driven is used to drive a TFT. The required gate electrode and the TFT panel structure formed on the same substrate by the gate wiring or the data wiring extended by the gate electrode. A schematic cross-sectional view of the most common reverse-staggered TFT panel structure shown in Fig. 1 will be described. The source electrode 6 and the germanium electrode 7 and the gate electrode are interposed between the gate insulating film 3 and the i-type semiconductor layer 4 and the n-type semiconductor layer 5 by forming the gate electrode 2 which is tapered in the glass substrate 1 2 is arranged in the opposite direction to form a TFT. The general semiconductor layer 4 is formed of a-Si, and the n-type semiconductor layer 5 is reacted by an n + a-Si 1304615 battery containing an n-type impurity, which is extremely difficult. In the molybdenum/aluminum laminated film, the above-mentioned mixed acid is used as a means for wet etching to control the film thickness ratio of the laminated film, but a fundamental solution has not been achieved, as described in Japanese Laid-Open Patent Publication No. Hei. . In view of the above circumstances, it is desirable to have an excellent etching method capable of etching the above laminated film into a good smooth tapered shape. PRIOR ART OF THE INVENTION The object of the present invention is to solve various problems of the prior art described above, and to provide an etching method for laminating an aluminum-based metal film, in particular, an aluminum-based metal film and a high-melting-point metal film such as molybdenum. Etched into a good smooth cone. The inventors of the present invention have dedicate themselves to the above-mentioned purposes, and have found that an etching solution composed of an aqueous solution containing phosphoric acid, nitric acid, an organic acid, and a cationic component is used to simultaneously engrave at least one metal film and at least one molybdenum system. In the case of laminating a film of a high-melting-point metal film, by maintaining the moisture content in the etching liquid between 10 and 30% by weight, a favorable smooth taper can be etched, and the present invention has finally been completed. S. BEST MODE FOR CARRYING OUT THE INVENTION The etching liquid used in the present invention is an aqueous solution containing phosphoric acid, nitric acid, an organic acid, and a cationic component. The concentration of phosphoric acid is from 50 to 80% by weight, preferably from 60 to 75% by weight, based on the wet etching solution. Phosphoric acid is mainly used for etching of aluminum-based metal film. When it is less than 50% by weight, the etching rate of the aluminum-based metal film is slow, and if the alkanolamines such as 1046656; ethylenediamine, propylenediamine, and triamethylene a polyamine such as a diamine or a tetraimine diamine; a cyclic amine such as pyrrole, pyrroline, pyrrolidine or morpholine; and tetramethylammonium hydroxide, tetraethylammonium hydroxide or trimethyl hydroxide ( A quaternary ammonium hydroxide such as 2-hydroxyethyl)ammonium. Further, in addition to the above ammonium, amine or quaternary ammonium hydroxide, a salt of an alkali metal such as sodium hydroxide or potassium hydroxide may be used as the cation generating component. Among the above cation generating components, ammonium salts are particularly preferred. The concentration of the cation generating component is 0.1 to 20% by weight, preferably 1 to 10% by weight, based on the wet etching liquid. When the amount is less than 0.1% by weight, the life of the etching liquid is shortened. When the amount is more than 20% by weight, the etching rate of the molybdenum metal film or the aluminum metal film is slow, which is not preferable. In the present invention, the optimum moisture content of the wet etching liquid is within a fixed range depending on the type and composition of the metal film to be etched, and it is actually necessary to appropriately determine each metal to be used, but usually in the range of 10 to 3 0% by weight. For example, when the high-melting-point metal film/aluminum-based metal film such as molybdenum is wet-etched, the moisture content is 15 to 20% by weight, preferably 16 to 19% by weight. When the high-melting-point metal film such as molybdenum or the high-melting-point metal film such as aluminum-based metal film/molybdenum is wet-etched, the moisture content is 18 to 23% by weight, preferably 19 to 22% by weight. The etching conditions are not particularly limited, and conventional conditions can be employed. For example, the metal film may be contacted with the wet uranium engraving solution at normal temperature (20 to 25 ° C) to 50 ° C for 0.5 to 3 minutes, but the etching conditions are preferably the type, thickness, etc. of the laminated film used. Make a decision and make an appropriate decision. Example 1 Using 4(a) to (detailed view), first, sputtering aluminum alloy 1304615 (9 9 · 1 wt% aluminum and 〇 · 9 wt% zirconium), followed by molybdenum alloy (85 wt% molybdenum) And 15 wt% tungsten)' to form a laminated film of a molybdenum alloy film 22 (75 〇A) / aluminum alloy film 2 丨 (75 Å) on the TFT glass substrate 1 (Fig. 4(a)). On the alloy/aluminum alloy laminated film, the photoresist 23 is applied, exposed by a pattern mask prepared in advance, and developed to form a desired photoresist pattern (Fig. 4(b)). Using the above 4 (b) The substrate of the figure is etched at 45 ° C in the following four etching solutions (1) to (4) until just after etching, rinsed with water, dried, and stripped of the photoresist by an amine stripping solution. After that, it was observed by an electron microscope (SEM). As a result, as shown in Fig. 4(c), a good smooth tapered molybdenum alloy/aluminum alloy laminated film was obtained. (1) Phosphoric acid 65 wt%, Nitric acid 9 wt%, acetic acid 5 wt%, ammonium hydroxide 2 wt%, moisture 19 wt%, (2) phosphoric acid 66 wt%, nitric acid 9 wt%, acetic acid 5 wt%, 2% by weight of oxidizing mirror, 18% by weight of water, (3) 67% by weight of phosphoric acid, 9% by weight of nitric acid, 5% by weight of acetic acid, 2% by weight of hydrogen peroxide, 17% by weight of water, (4) 68% by weight of phosphoric acid 9 wt% of nitric acid, 5 wt% of acetic acid, 2 wt% of ammonium hydroxide, and 16 wt% of water. Comparative Example 1 Using the substrate of the above Fig. 4 (b), the following two (5) to (6) The etching was performed at 45 ° C until the etching was carried out, washed with water, dried, and the photoresist 23 was peeled off by an amine-based stripping solution, and then observed by an electron microscope (SEM). 5 shown in Fig. 130415 is a non-tapered laminated film, and the smooth tapered molybdenum alloy/aluminum alloy laminated film shown in Fig. 4(c) cannot be obtained. (5) Phosphate 6% by weight, nitric acid 9 wt%, acetic acid 5 wt%, hydrogen peroxide mirror 2 wt%, moisture 22 wt%, (6) phosphoric acid 71 wt%, nitric acid 9 wt%, acetic acid 5 wt%, hydrogen peroxide wt 2 wt%, moisture 1 3 % by weight, Example 2 is described in detail using 6(a)~(〇图. First, sputtered molybdenum alloy (85 wt% molybdenum and 15) Amount of tungsten, aluminum alloy (99.1% by weight aluminum and 0.9% by weight of pin), followed by a molybdenum alloy (85% by weight of molybdenum and 15% by weight of tungsten) to form a molybdenum alloy film 2 on the TFT glass substrate 2 (7 5 0 A) / aluminum alloy film 21 (150 〇 A) / laminated film of molybdenum alloy film 22 (75 〇 A) (Fig. 6 (a)). On the laminated film, coated with photoresist 2 3 After exposure by a pattern mask prepared in advance, development is performed to form a desired photoresist pattern (Fig. 6(b)). Using the substrate of the above-mentioned 6th (b), etching is performed at 45 ° C in the following four (7) to (10) etching solutions until just after etching, rinsed with water, and dried, by an amine system. The peeling liquid was peeled off from the photoresist 2 and observed by an electron microscope (SEM). As a result, as shown in Fig. 6(c), a good smooth tapered molybdenum alloy/aluminum alloy/molybdenum alloy laminated film was obtained. ▲ (7) Pity acid 64% by weight, 7% by weight of nitric acid, 5% by weight of acetic acid, 2% by weight of ammonium oxyhydroxide, 22% by weight of water, (8) 5% by weight of phosphoric acid, 7% by weight of nitric acid, and 5 parts by weight of acetic acid %, 2% by weight of ammonium hydroxide, 21% by weight of water, 1304615 (9) 6% by weight of phosphoric acid, 7% by weight of nitric acid, 5% by weight of acetic acid, 2% by weight of ammonium hydroxide, 20% by weight of water, (1) 0) 6% by weight of phosphoric acid, 7% by weight of nitric acid, 5% by weight of acetic acid, 2% by weight of ammonium hydroxide, and 19% by weight of water. Example 3 Using the substrate of the above-mentioned FIG. 6(b), etching was performed at 45 ° C in the following four etching solutions (1 1) to (14) until just after etching, rinsing with water, and drying. The photoresist 2 was peeled off by an amine-based stripper, and then observed by an electron microscope (SEM). As a result, as shown in Fig. 6(c), a good smooth tapered molybdenum alloy/aluminum alloy/molybdenum alloy laminated film was obtained. (1 1) phosphoric acid 63% by weight, nitric acid 8% by weight, acetic acid 5% by weight, hydrogen peroxide amount 2% by weight 'moisture 22% by weight' (12) phosphoric acid 64% by weight, nitric acid 8% by weight, acetic acid 5% by weight, 2% by weight of hydrogen hydroxide, 2% by weight of water, (13) phosphoric acid 5% by weight, 8% by weight of acetic acid, 5% by weight of acetic acid, 2% by weight of ammonium hydroxide, 20% by weight of water, (1) phosphoric acid 6 6 wt%, 8% by weight of nitric acid, 5% by weight of acetic acid, 2% by weight of ammonium hydroxide, and 19% by weight of water. Example 4 Using the substrate of the above-mentioned (6) to (b), etching was performed at 45 ° C in the following etching liquids of (15) to (18) until just after etching, rinsing with water, drying, and borrowing After the photoresist 2 was peeled off from the amine-based stripping solution, it was observed by an electron microscope (SEM). The result is as shown in Fig. 6(c), and a good cis-cone molybdenum alloy/aluminum alloy/molybdenum 1046515 is shown to be a non-tapered laminated film, and the 6(c) diagram cannot be obtained. The tapered tapered molybdenum alloy/aluminum alloy/molybdenum alloy laminated film is shown. (2 1 ) 60% by weight of phosphoric acid, 8% by weight of nitric acid, 5% by weight of propionic acid, 2% by weight of hydrogen peroxide, 25% by weight of water, (2 2) 9% by weight of phosphoric acid, 8% by weight of nitric acid, propionic acid 5% by weight, 2% by weight of hydrogen peroxide, and 16% by weight of water, industrial use possibility. By using the etching method of the present invention, an aluminum-based metal film, particularly an aluminum-based metal film, and a molybdenum-based high melting point can be used. The laminated film of the metal film is wet etched into a good smooth tapered shape. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing the construction of a general reverse staggered TFT panel. Fig. 2 is a view showing a laminated structure in which a high-melting-point metal wiring is laminated on the upper layer of a low-resistance aluminum-based metal wiring. Fig. 3 is a view showing a laminated structure in which a molybdenum-based high-melting-point metal wiring is laminated on both the upper layer and the lower surface of the low-resistance aluminum-based metal wiring. Fig. 4 is a view showing a state in which the aluminum-based metal wiring/molybdenum-based high-melting-point metal wiring laminated structure is formed in a tapered shape. Fig. 5 is a view showing a non-tapered aluminum-based metal wiring/molybdenum-based high-melting-point metal wiring laminated structure. Fig. 6 is a view showing the formation of a structure of a molybdenum-based high-melting-point metal wiring/aluminum-based metal wiring/molybdenum-based high-melting-point metal wiring laminated structure. 1304615 Revision Page Figure 7 shows a schematic diagram of a non-tapered molybdenum-based high-melting-point metal wiring/aluminum-based metal wiring/molybdenum-based high-melting-point metal wiring laminate structure. Six, the main component symbol description

1 玻璃基板 2 閘電極 3 閘極絕緣膜 4 i型半導體層 5 η型半導體層 6 源電極 7 汲電極 2 1 5 鋁系金屬配線 IV 鉬等的高熔點金屬配線 2 1 銘合金膜 22 鉬合金膜 23 光阻 (劑） -14-1 glass substrate 2 gate electrode 3 gate insulating film 4 i-type semiconductor layer 5 n-type semiconductor layer 6 source electrode 7 germanium electrode 2 1 5 aluminum-based metal wiring IV high-melting-point metal wiring such as molybdenum 2 1 alloy film 22 molybdenum alloy Film 23 photoresist (agent) -14-

Claims

13 〇46l 5 銘/鉬積層膜之蝕刻方法」專利案 (2007年4月27日修正）拾、申請專利範圍 1 # π你於基板上所形成之積層膜接觸 h〜種蝕刻方法，其係使心 π被將海蝕刻 '液中的水分含量保持在〜種濕蝕刻液，同時时 ^ 廢膜係由鋁系金屬膜與該鋁系 1 5〜2 0重量％ ;其中積腰入 ^娘系高熔點金屬膜而構成’且濕触金屬膜上所形成之銷系# r否鹼、有機酸和陽離子生成成分刻液係由含有磷酸、硝私13 〇 46l 5 Ming / Molybdenum laminated film etching method" Patent (as amended on April 27, 2007) Pick up, apply for patent range 1 # π your laminated film formed on the substrate contact h ~ kind of etching method, its system The heart π is etched by the sea etched 'the moisture content in the liquid is kept at ~ wet etchant, while the ^ film is made of aluminum-based metal film and the aluminum-based 1 5~2 0% by weight; Is a high-melting-point metal film and constitutes 'and the pin system formed on the wet-touch metal film #r No alkali, organic acid and cation-forming components are made of phosphoric acid, nitric acid

第 9 1 1 24290 號的水溶液所組成。 2·—種蝕刻方法，其係使於基板上所形成之積層膜接觸一種濕蝕刻液，同時將濕蝕刻液中的水分含量保持在 18〜23重量％;其中積層膜係由鉬系尚熔點金屬膜、該鉬系高熔點金屬膜上所形成之銘系金屬膜與該銘系金屬膜上所形成鉬系高熔點金屬膜而構成’且濕蝕刻液係由含有磷酸、硝酸、有機酸和陽離子生成成分的水溶液所組成。 3 .如申請專利範圍第1或2項之蝕刻方法’其中鱗酸的濃度係爲濕蝕刻液的5 0〜8 0重量％。 4.如申請專利範圔第1或2項之蝕刻方法，其中硝酸的濃度係爲濕蝕刻液的0.5 ~ 1 0重量％。 5 .如申請專利範圍第1或2項之蝕刻方法，其中有機酸係選自由甲酸、乙酸、丙酸、丁酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、馬來酸、富馬酸、苯二甲酸、偏苯三甲酸、羥乙酸、乳酸、水楊酸、蘋果酸、酒石酸、檸檬酸、天冬胺酸及麩胺酸所組成族群的酸。 6.如申請專利範圍第1或2項之蝕刻方法，其中有機酸 1304615 的濃度係爲濕蝕刻液的0.5〜1 0重量％。 7 .如申請專利範圍第1或2項之蝕刻方法，其中陽離子生成成分係選自由銨、銨鹽、脂肪族胺類、烷醇胺類、多胺類、環狀胺類、四級銨氫氧化物、鹼金屬鹽所組成族群的化合物。 8 .如申請專利範圍第1或2項之蝕刻方法，其中陽離子生成成分的濃度係爲濕蝕刻液的0. 1〜2 0重量％。 1304615 修正頁陸、（一）、本案指定代表圖爲：無 (二）、本代表圖之元件代表符號簡單說明：The composition of the aqueous solution of No. 9 1 1 24290. 2. An etching method for contacting a laminated film formed on a substrate with a wet etching solution while maintaining a moisture content in the wet etching solution at 18 to 23% by weight; wherein the laminated film is composed of a molybdenum system a metal film, a metal film formed on the molybdenum-based high-melting-point metal film, and a molybdenum-based high-melting-point metal film formed on the metal film of the inscription, and the wet etching liquid contains phosphoric acid, nitric acid, organic acid, and The cation-forming component is composed of an aqueous solution. 3. The etching method according to claim 1 or 2 wherein the concentration of scaly acid is 50 to 80% by weight of the wet etching liquid. 4. The etching method according to claim 1 or 2, wherein the concentration of nitric acid is 0.5 to 10% by weight of the wet etching solution. 5. The etching method according to claim 1 or 2, wherein the organic acid is selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, and glycol. An acid of the group consisting of acid, maleic acid, fumaric acid, phthalic acid, trimellitic acid, glycolic acid, lactic acid, salicylic acid, malic acid, tartaric acid, citric acid, aspartic acid, and glutamic acid. 6. The etching method according to claim 1 or 2, wherein the concentration of the organic acid 1304615 is 0.5 to 10% by weight of the wet etching solution. 7. The etching method according to claim 1 or 2, wherein the cation generating component is selected from the group consisting of ammonium, ammonium salts, aliphatic amines, alkanolamines, polyamines, cyclic amines, quaternary ammonium hydrogen A compound of a group consisting of an oxide and an alkali metal salt. 1〜2 0重量百分比。 The etching solution is 0. 1~2 0% by weight of the wet etching solution. 1304615 Amendment page Lu, (1), the designated representative figure of this case is: None (2), the representative symbol of the representative figure is a simple description:

柒、本案若有化學式時，請揭示最能顯示發明特徵的化學 -'· * . - : 議:賴議観甘·柒 If there is a chemical formula in this case, please reveal the chemistry that best shows the characteristics of the invention - '· * . - : Discussion: Lai 観観 Gan