KR20040029289A - Etchant composition for aluminum or aluminum alloy single layer and multi layers - Google Patents

Etchant composition for aluminum or aluminum alloy single layer and multi layers Download PDF

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KR20040029289A
KR20040029289A KR1020030080557A KR20030080557A KR20040029289A KR 20040029289 A KR20040029289 A KR 20040029289A KR 1020030080557 A KR1020030080557 A KR 1020030080557A KR 20030080557 A KR20030080557 A KR 20030080557A KR 20040029289 A KR20040029289 A KR 20040029289A
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aluminum
etching
etchant composition
aluminum alloy
weight
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KR1020030080557A
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Korean (ko)
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이승용
이재연
최용석
천승환
박영철
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동우 화인켐 주식회사
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Priority to KR1020030080557A priority Critical patent/KR20040029289A/en
Publication of KR20040029289A publication Critical patent/KR20040029289A/en
Priority to KR1020040091817A priority patent/KR100955200B1/en
Priority to KR1020100024804A priority patent/KR101057360B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor

Abstract

PURPOSE: A new type etchant composition for etching multilayered film and single layered film containing aluminum or aluminum alloy layer used in the TFT-LCD (thin film transistor liquid crystal display) process is provided. CONSTITUTION: The etchant composition for etching multilayered film and single layered film containing aluminum or aluminum alloy layer comprises 56 to 70 wt.% of phosphoric acid, 2 to 7 wt.% of nitric acid, 7 to 15 wt.% of acetic acid, 0.1 to 3 wt.% of potassium based compound, and a balance of water, wherein the potassium based compound is selected from the group consisting of KC2H3O2, K2CO3, KClO3, KCl, KF, KHSO4, KNO3, K2C2O4, KClO4, K2O8S2, KH2PO4, K2HPO4 and K2SO4.

Description

알루미늄 또는 알루미늄 합금층을 함유한 다층막 및 단일막 식각액 조성물{ETCHANT COMPOSITION FOR ALUMINUM OR ALUMINUM ALLOY SINGLE LAYER AND MULTI LAYERS}ETCHANT COMPOSITION FOR ALUMINUM OR ALUMINUM ALLOY SINGLE LAYER AND MULTI LAYERS}

본 발명은 반도체 장치에서 금속막의 습식 식각용으로 사용되는 새로운 식각액 조성물에 관한 것으로, 보다 구체적으로 TFT-LCD (thin film transistor liquid crystal display) 공정 중에 사용되는 알루미늄 또는 알루미늄 합금층을 함유한 다층막 및 단일막을 식각하기 위한 새로운 형태의 식각액 조성물에 관한 것이다.The present invention relates to a novel etchant composition used for wet etching of a metal film in a semiconductor device, and more particularly to a multilayer film and a single layer containing an aluminum or aluminum alloy layer used during a thin film transistor liquid crystal display (TFT-LCD) process. A new type of etchant composition for etching a membrane.

반도체 장치에서 기판 위에 금속 배선을 형성하는 과정은 통상적으로 스퍼터링에 의한 금속막 형성공정, 포토레지스트 도포, 노광 및 현상에 의한 선택적인 영역에서의 포토레지스트 형성공정, 및 식각 공정에 의한 단계로 구성되고, 개별적인 단위 공정 전후의 세정 공정 등을 포함한다. 이러한 식각 공정은 포토레지스트 마스크를 사용하여 선택적인 영역에 금속막을 남기는 공정을 의미하며, 통상적으로 플라즈마 등을 이용한 건식 식각 또는 식각 용액을 사용하는 습식 식각이 사용된다.The process of forming the metal wiring on the substrate in the semiconductor device is generally composed of a metal film forming process by sputtering, a photoresist forming process in a selective region by photoresist coating, exposure and development, and an etching process. And washing processes before and after individual unit processes. The etching process refers to a process of leaving a metal film in a selective region using a photoresist mask, and typically, a dry etching using a plasma or the like, or a wet etching using an etching solution is used.

이러한 반도체 장치에서, TFT-LCD의 배선재료로서 일반적으로 사용되는 금속은 알루미늄 또는 알루미늄 합금으로서, 순수한 알루미늄은 화학물질에 대한 내성이 약하고 후속 공정에서 배선 결합 문제를 야기할 수 있으므로 알루미늄 합금 형태로 사용되거나, 알루미늄 또는 알루미늄 합금층 위에 또 다른 금속층, 예컨대 몰리브덴, 크롬, 텅스텐, 주석 등의 금속층을 갖는 다층의 적층 구조가 적용될 수 있다.In such semiconductor devices, metals commonly used as wiring materials for TFT-LCDs are aluminum or aluminum alloys, and pure aluminum is used in the form of aluminum alloys because it is poorly resistant to chemicals and can cause wiring bonding problems in subsequent processes. Or a multi-layered laminate structure having another metal layer, such as molybdenum, chromium, tungsten, tin or the like, on the aluminum or aluminum alloy layer.

예컨대, Mo/Al-Nd 이중막의 경우 통상 인산-주성분 알루미늄 식각액으로 식각할 수 있으나, 두 층간의 식각 속도 차이로 인하여 Mo 오버행(overhang)이 발생하므로 후속공정으로 이러한 오버행을 건식 식각하는 것으로 알려져 있다.For example, a Mo / Al-Nd double layer can be commonly etched with a phosphate-based aluminum etchant, but since the Mo overhang occurs due to the difference in etching rates between the two layers, it is known to dry etch such an overhang in a subsequent process. .

이와 같이, TFT-LCD 등의 반도체 장치의 배선을 형성하기 위한 금속막을 다중층 구조로 할 경우에는 습식 공정과 건식 공정을 함께 적용함으로서 서로의 단점을 보완하는 것이 일반적이다.As described above, when the metal film for forming wiring of a semiconductor device such as a TFT-LCD has a multilayer structure, it is common to apply a wet process and a dry process together to compensate for the disadvantages of each other.

Mo/Al-Nd 이중막을 종래 기술에 의한 알루미늄 식각액으로 습식 식각할 경우, 상부 Mo 층의 식각 속도가 알루미늄 합금층의 식각 속도보다 작기 때문에 상부 Mo 층이 하부 Al-Nd 층의 외부로 돌출되는 단면을 갖게 되는 불량한 프로파일을 나타낸다. 이러한 불량한 프로파일로 인해 후속 공정에서 단차 커버리지(coverage)가 불량하게 되고 상부층이 경사면에서 단선되든가 또는 상하부 금속이 단락될 확률이 커지게 된다. 이러한 경우, 1 차로 알루미늄 식각 용액으로 습식 식각하고, 2 차로 식각 속도의 차이로 인해 미처 식각되지 못하고 하부층 바깥으로 돌출된 상부층을 다시 건식 식각하는 2 단계 공정을 적용하는 것이 일반적이나, 공정이 복잡하여 생산성 및 비용적인 측면에서 불리하며, 제품 손상 등의 문제점이 존재한다.When wet etching Mo / Al-Nd bilayer with aluminum etching liquid according to the prior art, the cross section in which the upper Mo layer protrudes outward from the lower Al-Nd layer because the etching rate of the upper Mo layer is smaller than that of the aluminum alloy layer. Indicates a bad profile that has This poor profile results in poor step coverage in subsequent processes and increases the likelihood that the top layer is disconnected from the slope or the upper and lower metals are shorted. In this case, it is common to apply a two-step process of wet etching first with an aluminum etching solution and dry etching secondly with the upper layer protruding out of the lower layer due to the difference in etching rate. It is disadvantageous in terms of productivity and cost, and there are problems such as product damage.

이러한 종래 기술에 대응하여, 본 출원인에 의해 출원된 특허출원 제 1999-41119 호 (공개번호 제 2001-28729 호) 는 인산-주성분 식각액을 개시하고 있으며, 인산, 질산 및 아세트산의 조성비를 특정하게 변화시킴으로써, 상부 Mo 층이 하부 알루미늄 합금층의 외부로 돌출되는 단면을 갖게 되는 불량 프로파일이 없어지고, 추가의 건식 식각이 필요하지 않을 정도로 우수한 프로파일을 수득할 수 있으므로, 2 단계 공정의 종래 기술에 비해 매우 간단하고 경제적으로 식각을 행할 수 있었다.In response to this prior art, Patent Application No. 1999-41119 filed by the applicant (published number 2001-28729) discloses a phosphoric acid-based component etching solution, and specifically changes the composition ratio of phosphoric acid, nitric acid and acetic acid. This eliminates the bad profile that the upper Mo layer has in cross section protruding out of the lower aluminum alloy layer, and obtains an excellent profile so that no additional dry etching is required, so that compared to the prior art of the two step process The etching was very simple and economical.

그러나, 기판의 크기가 커짐에 따라 기존의 제품으로는 균일한 테이퍼 각을 가지게 하는데 한계가 있다.However, as the size of the substrate increases, there is a limit to having a uniform taper angle with existing products.

이에 본 발명자들은 이러한 문제점을 해결하고자 예의 노력한 결과, 종래의 알루미늄 식각액 즉, 인산, 질산, 아세트산에 칼륨계 화합물의 첨가제를 첨가하여 기존의 타입과는 새로운 특성을 갖는 식각액을 개발할 수 있었으며, 본 발명에 의한 새로운 형태의 식각액은 Mo/Al-Nd, Mo/Al/Mo, Mo/Al-Nd/Mo 등 알루미늄 또는 알루미늄 합금층을 함유한 다층막 및 단일막에 사용함으로써 상부나 하부 금속의 식각 불량 문제, 알루미늄 경사각의 불량, 균일성 문제, 패널과 패드 식각의 차이에 의한 사이드 식각 증가의 단점을 완전히 해결할 수 있음을 발견하고 본 발명을 완성하게 되었다.Accordingly, the present inventors have diligently tried to solve these problems, and as a result, by adding an additive of a potassium-based compound to a conventional aluminum etchant, that is, phosphoric acid, nitric acid, and acetic acid, an etchant having a characteristic different from the existing type could be developed. The new type of etching solution is used for multi layer and single layer containing aluminum or aluminum alloy layer such as Mo / Al-Nd, Mo / Al / Mo, Mo / Al-Nd / Mo, etc. The present invention has been found to completely solve the shortcomings of an increase in side etching due to a poor aluminum inclination angle, a uniformity problem, and a difference in panel and pad etching.

본 발명에 의하면, 기존 인산계에서는 패널의 크기가 커지면서 패널의 부분적인 식각 시간의 차이에 의한 균일성 저하, 이로 인한 얼룩현상이 발생, 상부나하부 금속의 식각 불량 문제, 경사각의 불량 문제를 모두 해결될 수 있는 장점이 있다.According to the present invention, in the conventional phosphate system, as the size of the panel increases, the uniformity decrease due to the difference in partial etching time of the panel, the staining occurs, the problem of poor etching of the upper or lower metal, and the problem of inclined angle There is an advantage that can be solved.

결국, 본 발명의 목적은, TFT-LCD 공정 중에 사용되는 알루미늄 또는 알루미늄 합금층을 함유한 다층막 및 단일막의 패널의 크기가 커지면서 인산계 형태의 에천트에서 문제시되어지는 균일성의 문제점을 해결하는 식각액 조성물(이하, "알루미늄 식각액 조성물" 이라 함)을 제공하는 것이다.As a result, an object of the present invention is to provide an etching solution composition which solves the problem of uniformity which is a problem in the phosphate-based etchant as the size of the panel of the multilayer film and the single film containing the aluminum or aluminum alloy layer used during the TFT-LCD process increases. (Hereinafter referred to as "aluminum etchant composition").

본 발명을 실현하기 위한 수단으로서, 인산, 질산, 아세트산, 칼륨계 화합물 및 물로 이루어진 식각액 조성물을 제공한다.As means for realizing the present invention, there is provided an etching liquid composition consisting of phosphoric acid, nitric acid, acetic acid, potassium-based compound and water.

더욱 구체적으로, 전체 조성물 총중량에 대하여 인산 56 ~ 70 중량%, 질산 2 ~ 7 중량%, 아세트산 7 ~ 15 중량%, 칼륨계 화합물 0.1 ~ 3 중량% 및 전체 조성물 총 중량이 100 중량% 가 되도록 하는 물을 함유하는 식각액 조성물은 제공한다.More specifically, 56 to 70% by weight of phosphoric acid, 2 to 7% by weight of nitric acid, 7 to 15% by weight of acetic acid, 0.1 to 3% by weight of potassium-based compound and 100% by weight of the total composition of the total composition An etchant composition containing water is provided.

보다 바람직한 구현 예로서의 본 발명은 전체 조성물 총 중량에 대하여 인산 60 ~ 70 중량%, 질산 4 ~ 7 중량%, 아세트산 8 ~ 11 중량%, 칼륨계 화합물 0.1 ~ 2 중량% 및 전체 조성물 총 중량이 100 중량% 가 되도록 하는 물을 함유하는 식각액 조성물은 제공한다. 이하에서 본 발명을 보다 상세히 설명한다.As a more preferred embodiment of the present invention, the present invention comprises 60 to 70% by weight of phosphoric acid, 4 to 7% by weight of nitric acid, 8 to 11% by weight of acetic acid, 0.1 to 2% by weight of potassium-based compound and 100% by weight of the total composition. An etchant composition containing water to be% is provided. Hereinafter, the present invention will be described in more detail.

본 발명에 의한 식각액 조성물은 알루미늄 또는 알루미늄 합금층을 함유한 다층막 및 단일막을 식각하기 위한 식각액이다.The etchant composition according to the present invention is an etchant for etching a multilayer film and a single film containing an aluminum or aluminum alloy layer.

본 발명에서의 알루미늄 또는 알루미늄 합금 다층막이란 알루미늄 막과 다른 금속 막질로 이루어진 다층막을 의미한다. 예를 들어 Mo/Al-Nd 이중막의 경우,Mo 막을 상부막으로 하고 Al-Nd 막을 하부막으로 하거나, 그의 역도 성립하며 Mo/Al/Mo, Mo/Al-Nd/Mo 삼중막인 경우, Mo 막을 상하부막으로 하고 순수한 Al 및 Al-Nd막을 중간막으로 사용한다.The aluminum or aluminum alloy multilayer film in the present invention means a multilayer film made of an aluminum film and another metal film. For example, in the case of a Mo / Al-Nd double film, the Mo film is the upper film and the Al-Nd film is the lower film, or vice versa, and the Mo / Al / Mo, Mo / Al-Nd / Mo triple film is Mo. The upper and lower films are used, and pure Al and Al-Nd films are used as intermediate films.

본 발명에서의 알루미늄 또는 알루미늄 합금 단일막이란 알루미늄 막으로 이루어진 막을 의미한다. 이때 알루미늄 막은 알루미늄 단독 또는 알루미늄 을 주성분으로 하여 합금으로 된 금속막을 포함하며, 순수한 알루미늄 은 화학물질에 대한 내성이 약하고 후속 공정에서 배선 결합 문제를 야기할 수 있으므로 통상 알루미늄 합금의 형태로 제공되며, 특히 Nd 가 합금된 Al-Nd 막이 바람직하게 사용된다.In the present invention, the aluminum or aluminum alloy single film means a film made of an aluminum film. In this case, the aluminum film includes a metal film made of aluminum alone or an alloy composed mainly of aluminum, and pure aluminum is generally provided in the form of an aluminum alloy because it is weak in chemical resistance and may cause wiring bonding problems in subsequent processes. Al-Nd films alloyed with Nd are preferably used.

본 발명의 알루미늄 식각액 조성물에 사용되는 칼륨계 화합물에는, 그 종류는 특별히 한정되지는 않으나, 예컨대 KC2H3O2, K2CO3, KClO3, KCl, KF, KHSO4, KNO3, K2C2O4, KClO4, K2O8S2, KH2PO4, K2HPO4및 K2SO4등을 들 수 있으며, 바람직하게는 KNO3이다.The type of potassium compound used in the aluminum etchant composition of the present invention is not particularly limited, but for example, KC 2 H 3 O 2 , K 2 CO 3 , KClO 3 , KCl, KF, KHSO 4 , KNO 3 , K 2 C 2 O 4 , KClO 4 , K 2 O 8 S 2 , KH 2 PO 4 , K 2 HPO 4 , K 2 SO 4 , and the like, and preferably KNO 3 .

[실시예]EXAMPLE

실시예 1 내지 18Examples 1-18

Mo/Al-Nd 이중막과 Mo/Al/Mo, Mo/Al-Nd/Mo 삼중막 기판을 준비하였다. 인산, 질산, 아세트산, 질산칼륨 및 나머지 물을 표 1 에 기재된 전체 조성물의 총중량에 대한 조성비로 함유하는 식각액을 180 kg이 되도록 제조하였다. 분사식 식각 방식의 실험장비 (KDNS사 제조, 모델명: ETCHER(TFT)) 내에 제조된 식각액을 넣고 온도를 40 ℃ 로 세팅하여 가온한 후, 온도가 40 ±0.5 ℃에 도달하면 식각 공정을 수행하였다. O/E(Over Etch)를 패드부분의 EPD(End Point Detection)를 기준으로 하여 30% 및 50%를 주어 실시하였다. 기판을 넣고 분사를 시작하여 식각이 종료되면 꺼내어 탈이온수로 세정한 후, 열풍건조장치를 이용하여 건조하고, 포토 레지스트(PR) 박리기(stripper)를 이용하여 포토 레지스트를 제거하였다. 세정 및 건조 후 전자주사현미경 (SEM ; HITACHI사 제조, 모델명: S-4700)을 이용하여 식각 프로파일을 경사각, 사이드 식각 CD (critical dimension) 손실, 식각 잔류물 등으로 평가하였다. 그 결과를 표 1 에 나타낸다.Mo / Al-Nd bilayer, Mo / Al / Mo, and Mo / Al-Nd / Mo triple layer substrates were prepared. An etching solution containing phosphoric acid, nitric acid, acetic acid, potassium nitrate and the remaining water in a composition ratio with respect to the total weight of the total composition shown in Table 1 was prepared to be 180 kg. An etching solution prepared in a spray etching method (manufactured by KDNS, model name: ETCHER (TFT)) was added thereto, warmed by setting the temperature to 40 ° C, and the etching process was performed when the temperature reached 40 ± 0.5 ° C. O / E (Over Etch) was performed at 30% and 50% based on EPD (End Point Detection) of the pad part. After the substrate was inserted and spraying was started and the etching was completed, the substrate was taken out, washed with deionized water, dried using a hot air dryer, and removed using a photoresist stripper. After washing and drying, the etching profile was evaluated by using an electron scanning microscope (SEM; manufactured by HITACHI, model name: S-4700) with an inclination angle, loss of side etching CD (critical dimension), and etching residue. The results are shown in Table 1.

실시예Example 기판Board 조성(중량%)(인산/질산/아세트산/칼륨계 화합물/물)Composition (wt%) (phosphoric acid / nitric acid / acetic acid / potassium compound / water) 경사각(도)Tilt angle (degrees) CD(㎛)CD (μm) 평가evaluation 30%30% 50%50% 30%30% 50%50% 1One Mo/Al-NdMo / Al-Nd 70/3/10/0.5/16.570/3/10 / 0.5 / 16.5 6565 6060 0.40.4 0.60.6 양호Good 22 69/5/10/1/1569/5/10/1/15 6565 6060 0.40.4 0.550.55 양호Good 33 65/4/10/2/1965/4/10/2/19 6060 6060 0.30.3 0.40.4 우수Great 44 65/6/9/0.5/19.565/6/9 / 0.5 / 19.5 6060 5858 0.30.3 0.40.4 우수Great 55 60/4/9/1/2660/4/9/1/26 6262 6060 0.40.4 0.550.55 양호Good 66 60/7/10/3/2060/7/10/3/20 6565 6060 0.450.45 0.60.6 양호Good 77 Mo/Al/MoMo / Al / Mo 70/3/10/0.5/16.570/3/10 / 0.5 / 16.5 7070 7272 0.350.35 0.50.5 양호Good 88 69/5/10/1/1569/5/10/1/15 6868 6969 0.40.4 0.550.55 양호Good 99 65/4/10/2/1965/4/10/2/19 7070 7070 0.30.3 0.40.4 우수Great 1010 65/6/9/0.5/19.565/6/9 / 0.5 / 19.5 6868 7070 0.30.3 0.350.35 우수Great 1111 60/4/9/1/2660/4/9/1/26 6565 6666 0.40.4 0.550.55 양호Good 1212 60/7/10/3/2060/7/10/3/20 6060 6262 0.450.45 0.60.6 양호Good 1313 Mo/Al-Nd/MoMo / Al-Nd / Mo 70/3/10/0.5/16.570/3/10 / 0.5 / 16.5 7070 7272 0.350.35 0.50.5 양호Good 1414 69/5/10/1/1569/5/10/1/15 6868 6969 0.370.37 0.550.55 양호Good 1515 65/4/10/2/1965/4/10/2/19 7070 7070 0.30.3 0.40.4 우수Great 1616 65/6/9/0.5/19.565/6/9 / 0.5 / 19.5 6868 7070 0.30.3 0.350.35 우수Great 1717 60/4/9/1/2660/4/9/1/26 6565 6666 0.40.4 0.550.55 양호Good 1818 60/7/10/3/2060/7/10/3/20 6262 6262 0.420.42 0.590.59 양호Good

비교예 1 내지 3Comparative Examples 1 to 3

Mo/Al-Nd 이중막과 Mo/Al/Mo, Mo/Al-Nd/Mo 삼중막 기판을 준비하였다. 인산, 질산, 아세트산, 질산칼륨 및 나머지 물을 표 2 에 기재된 전체 조성물의 총중량에 대한 조성비로 함유하는 식각액을 180 kg이 되도록 제조하였다. 이하 실시예와 동일한 방법으로 평가하여 그 결과를 표 2 에 나타낸다.Mo / Al-Nd bilayer, Mo / Al / Mo, and Mo / Al-Nd / Mo triple layer substrates were prepared. An etching solution containing phosphoric acid, nitric acid, acetic acid, potassium nitrate and the remaining water in a composition ratio with respect to the total weight of the total composition shown in Table 2 was prepared to be 180 kg. It evaluates by the method similar to the following Example, and shows the result in Table 2.

비교예Comparative example 기판Board 조성(중량%)(인산/질산아세트산/칼륨계 화합물/물)Composition (% by weight) (phosphate / nitrate / potassium compound / water) 경사각(도)Tilt angle (degrees) CD(㎛)CD (μm) 평가evaluation 30%30% 50%50% 30%30% 50%50% 1One Mo/Al-NdMo / Al-Nd 64/5/10/5/1664/5/10/5/16 오버행Overhang -- -- 불량Bad 22 Mo/Al/MoMo / Al / Mo 64/5/10/5/1664/5/10/5/16 오버행Overhang -- -- 불량Bad 33 Mo/Al-Nd/MoMo / Al-Nd / Mo 64/5/10/5/1664/5/10/5/16 오버행Overhang -- -- 불량Bad

본 발명에 의하면, 알루미늄 또는 알루미늄 합금층을 함유한 다층막 및 단일막을 식각하기 위한 새로운 형태의 식각액 조성물에 관한 것으로, 장비의 의존성이 전혀 없고, 알루미늄을 함유한 다양한 종류의 기판을 식각 할 수 있으며, 경사각이 75 도 이하로 매우 양호한 식각 특성을 갖는 식각액을 제공할 수 있다.The present invention relates to a new type of etchant composition for etching a multilayer film and a single film containing an aluminum or aluminum alloy layer, there is no dependence of equipment, it is possible to etch a variety of substrates containing aluminum, It is possible to provide an etching liquid having very good etching characteristics with an inclination angle of 75 degrees or less.

Claims (2)

전체 조성물 총중량에 대하여 인산 56 ~ 70 중량%, 질산 2 ~ 7 중량%, 아세트산 7 ~ 15 중량%, 칼륨계 화합물 0.1 ~ 3 중량% 및 전체 조성물 총 중량이 100 중량% 가 되도록 하는 물을 함유하는 식각액 조성물로써 알루미늄 또는 알루미늄 합금층을 함유한 다층막 및 단일막을 식각하기 위한 식각액 조성물.56 to 70% by weight of phosphoric acid, 2 to 7% by weight of nitric acid, 7 to 15% by weight of acetic acid, 0.1 to 3% by weight of potassium compound and 100% by weight of total composition An etchant composition for etching a multilayer and a single film containing an aluminum or aluminum alloy layer as an etchant composition. 제 1 항에 있어서, 칼륨계 화합물은 KC2H3O2, K2CO3, KClO3, KCl, KF, KHSO4, KNO3, K2C2O4, KClO4, K2O8S2, KH2PO4, K2HPO4및 K2SO4로 구성된 군에서 선택되는 것을 특징으로 하는 식각액 조성물.The method of claim 1, wherein the potassium compound is KC 2 H 3 O 2 , K 2 CO 3 , KClO 3 , KCl, KF, KHSO 4 , KNO 3 , K 2 C 2 O 4 , KClO 4 , K 2 O 8 S 2 , KH 2 PO 4 , K 2 HPO 4 and K 2 SO 4 The etchant composition characterized in that it is selected from the group consisting of.
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