TW200422742A - Manufacturing method and structure of copper lines for a liquid crystal panel - Google Patents
Manufacturing method and structure of copper lines for a liquid crystal panel Download PDFInfo
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- TW200422742A TW200422742A TW92108854A TW92108854A TW200422742A TW 200422742 A TW200422742 A TW 200422742A TW 92108854 A TW92108854 A TW 92108854A TW 92108854 A TW92108854 A TW 92108854A TW 200422742 A TW200422742 A TW 200422742A
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五、發明說明（1) 一、【發明所屬之技術領域】 之形成方法及結構，特別 面板的銅導線之形成方法 本發明係有關於液晶面板的導線 是有關於利用銅膠帶來形成液晶 及結構。 二、【先前技術】 液晶顯示器擁有百萬計的 體，可以控制各俯薄臈電體= 透過這些薄膜電晶 而決定了各個薄膜電晶體 液晶之排列方式，因 像》每個薄膜電晶不：=畫素之亮度，而顯示出影 資料線。閘極線用：j 線麻-為閘極•，另一為 接線的電性反應影導線極其相關的連 液…器目前的發曰‘…的解析度及反應速率。 的尺寸。傳统上展趨勢乃朝向越快的反 TFT-LCD的面被大尺寸（主動矩陣式：及越大 電性。-般i# ’主要是因為利用銘作為 屬所構成的雄：以單層的紹：或有較佳的導 ZUU422/42V. Description of the invention (1) I. [Technical field to which the invention belongs] Forming method and structure, especially method for forming copper wires of a panel The present invention relates to the wires of a liquid crystal panel and the use of a copper tape to form a liquid crystal and a structure . 2. [Previous technology] The liquid crystal display has millions of bodies, which can control each of the thin film transistors. Through these thin film transistors, the arrangement of the liquid crystals of each thin film transistor is determined. : = The brightness of the pixels, and the shadow data line is displayed. For the gate line: j line hemp-is the gate •, and the other is the connection of the electrical response to the wiring. The current of the device is related to the ‘... resolution and reaction rate. size of. Traditionally, the trend has been towards the larger size of the faster anti-TFT-LCD (active matrix type: and greater electrical properties. -General i # 'is mainly due to the use of Ming as a genus: a single layer Shao: Maybe a better guide ZUU422 / 42
在面對更大p . 的反應速率晶顯示器具有更高的解析度，且更 線的導電性叙土二=液晶電視）的要求下，在傳統的鋁 材料，以達ί更的情況不，勢必需尋找新的導 更同解析度及更快的反應速率之要求。 快 導 線 目前’在半導體積體In the face of a larger response rate of p. Crystal display with higher resolution and more linear conductivity (Study II = LCD TV) requirements, in the traditional aluminum material, to achieve more situations, It is necessary to find new requirements for the same resolution and faster response rate. Fast-conducting wires
銅導線來取：：：：，一般以具有更好導電性的 韻。徊±^ 等線以解決銘導線的導電性瓶頸的問 $ β θ古/鋼並沒有適當的蝕刻液，因此，銅導線的製程 相當的難度的。首先，如第一圖所示，在一底材 π成凹槽20。然後，如第二a圖所示，於底材1〇的表 面形巧丁層薄而連續的銅種晶層（c〇pper see(i layer ) 30 ’藉以提高銅導線的附著力並促進後續電鍍過程銅的生 長。此銅種晶層3 〇也必須同時覆蓋於凹槽2 〇的表面，如此 銅種晶層3 0能夠沿著凹槽2 0結構促進電鍍時銅結晶生長， 而且銅種晶層3 0也必須薄、均勻而且連續，如此充填銅時 才不會產生空隙。但是，當有銅因擴散至其他結構層而導 致漏電之疑慮時，必須加一阻障層40，麵第二B圖所示， 以預防銅藉由擴散方式進入他層結構之中而造成漏電，同 時也可避免銅與矽產生反應。因此，在形成銅種晶層30之 前，有時需先形成一層阻障層4 0以防止漏電問題之產生。Copper wire ::::, generally with better conductivity. To solve the problem of the conductive bottlenecks of the lead wires, such as ± ^, etc., β β θ ancient / steel does not have an appropriate etching solution, so the copper wire manufacturing process is quite difficult. First, as shown in the first figure, a groove 20 is formed on a substrate π. Then, as shown in FIG. 2a, a thin and continuous copper seed layer (copper see (i layer)) 30 ′ is formed on the surface of the substrate 10 to improve the adhesion of the copper wire and promote subsequent The growth of copper during the plating process. The copper seed layer 30 must also cover the surface of the groove 20 at the same time. In this way, the copper seed layer 30 can promote the copper crystal growth during plating along the groove 20 structure, and the copper seed The crystal layer 30 must also be thin, uniform, and continuous, so that no voids will be generated when copper is filled. However, when there is a concern about leakage of copper due to diffusion to other structural layers, a barrier layer 40 must be added. As shown in Figure 2B, in order to prevent copper from leaking into the other layer structure through diffusion and cause leakage, it can also prevent copper and silicon from reacting. Therefore, before forming the copper seed layer 30, it is sometimes necessary to form a layer first. The barrier layer 40 prevents the leakage problem.
接著，通上電源進行銅的電化學電鍍（electrical plating)步驟，將銅電鍍膜50鍍在銅種晶層30上，使銅 電鍍膜50可連續、平滑、良好地覆蓋於銅種晶層30之上，Next, the copper is electro-plated by applying a power source, and the copper plating film 50 is plated on the copper seed layer 30 so that the copper plating film 50 can continuously, smoothly and well cover the copper seed layer 30. Above
第6頁 200422742 五、發明說明（3) 並填滿凹槽2 0而無任何空洞或缺陷之現象，如第三圖所示 (未顯示阻障層4 0 )。最後，進行化學機械研磨之步驟， 將凹槽20以外的底材10之上的銅金屬磨除至底材10之表面 為止，而僅留下填充於凹槽20部分的銅金屬，如第四圖所 示。如此，即完成了銅導線之形成。 但是，上述的銅導線製程方式，應用於TFT-LCD主動矩陣 ， 式液晶顯示器的銅導線之形成並不可行。主要原因就是液 晶面板之尺寸大小，相較於半導體工業的1 2吋晶圓而言， 面積仍大上太多。因此，銅種晶層3 0的形成上，其厚度的 均一性就難以控制在範圍内，而容易出現空洞的情況。或 _ 者，於電鍍過程，銅沈積速率的控制上就必須更精確，使 各區域的沈積速率能大致相同。但這些問題的難度會隨著 尺寸的增大而增高。因此，對於大尺寸的面板而言，這些 · 問題是很難加以克服的。 三、【發明内容】 鑑於上述之發明背景中，習知技藝的銅導線的製程，對於 大面積的銅導線之形成上，有種晶層的均一性，及電鍍時 的均勻性上的問題。本發明之主要目的在於提供一新的銅 導線製程，避免大面積的銅導線之形成上會遭遇種晶層的 ® 均一性的問題。Page 6 200422742 V. Description of the invention (3) and filling the groove 20 without any voids or defects, as shown in the third figure (the barrier layer 40 is not shown). Finally, a step of chemical mechanical polishing is performed, the copper metal on the substrate 10 other than the groove 20 is ground to the surface of the substrate 10, and only the copper metal filled in the groove 20 is left, such as the fourth As shown. In this way, the formation of the copper wire is completed. However, the above-mentioned copper wire manufacturing method is not applicable to the formation of the copper wires of the TFT-LCD active matrix liquid crystal display. The main reason is the size of the liquid crystal panel. Compared with the 12-inch wafers in the semiconductor industry, the area is still too large. Therefore, in the formation of the copper seed layer 30, it is difficult to control the thickness uniformity within the range, and it is easy to cause voids. Or, in the electroplating process, the control of the copper deposition rate must be more precise, so that the deposition rate in each area can be approximately the same. However, the difficulty of these problems will increase as the size increases. Therefore, for large-sized panels, these problems are difficult to overcome. III. [Summary of the Invention] In view of the above-mentioned background of the invention, the manufacturing process of copper wires with conventional techniques has problems with the uniformity of the seed layer and the uniformity of plating during the formation of large-area copper wires. The main purpose of the present invention is to provide a new copper wire manufacturing process, which avoids the problem of the uniformity of the seed layer when forming large-area copper wires.
第7頁 200422742 五、發明說明（4) " --*--- 本發明的另一目的為，利用本發明的銅導線之形成方法， 可避免大面積的銅導線之形成上，電鍍均勻性上的問題。 j發明的再一目的為，利用銅膠帶直接貼附於基板上的方 式，可取代種晶層及電鍍的步驟，減少製程步驟，降低製 程成本。 本發明的又一目的為，以銅膠帶所形成銅導線，可有效避 免空洞、缺陷，而提升形成之鋼導線的均勻度。 本發明的另一目的為，以銅導線取代鋁導線，以減少液晶 面板導線的RC延遲時間。 根據以上所述之目的，本發明揭露了 一種液晶面板的銅導 線之結構❶此液晶面板的銅導線之結構包含一底材，該底 材之一表面具有複數條溝渠；以及複數條銅導線，該複數 條銅導線係以一銅勝帶貼附於該底材之上，再進行化學機 械研磨，使該銅膠帶位於該複數條溝渠之外之部分完全移 除而形成。 再者，本發明也同時揭露了一種液晶面板的銅導線之形成 方法。本發明之形成方法包含形成複數條溝渠於一基板之 上；貼附一銅膠帶於該基板及該複數條溝渠之上；以及進 行化學機械研磨’使該銅膠帶位於該複數條溝渠之外之部Page 7 200422742 V. Description of the invention (4) "-* --- Another object of the present invention is to use the method for forming the copper wire of the present invention to avoid the formation of a large area of copper wire and uniform plating. Sexual problems. Another object of the invention is to directly attach the copper tape to the substrate, which can replace the seed layer and electroplating steps, reduce process steps, and reduce process costs. Yet another object of the present invention is that a copper wire formed by a copper tape can effectively avoid voids and defects and improve the uniformity of the formed steel wire. Another object of the present invention is to replace the aluminum wires with copper wires to reduce the RC delay time of the wires of the liquid crystal panel. According to the above-mentioned purpose, the present invention discloses a structure of a copper wire of a liquid crystal panel. The structure of the copper wire of the liquid crystal panel includes a substrate having a plurality of trenches on one surface of the substrate; and a plurality of copper wires. The plurality of copper wires are attached to the substrate with a copper tape, and then chemically and mechanically polished, so that portions of the copper tape outside the plurality of trenches are completely removed and formed. Furthermore, the present invention also discloses a method for forming a copper wire of a liquid crystal panel. The forming method of the present invention includes forming a plurality of trenches on a substrate; attaching a copper tape to the substrate and the plurality of trenches; and performing chemical mechanical polishing to position the copper tape outside the plurality of trenches. unit
問的洞為形導大受 的槽空的先銅使而 陷凹或藝可以，頸 缺滿勻技也，間瓶 或填均知，且時電 洞式不習間而遲導 空方的於之。延的 其鍍中較帶求RC鋁 且電藝相膠要的因 ，以技也銅的線不 小再知驟及程導率 分層習步板製板速 十晶免程基同面應 異種避製在不晶反 差成可的而合液與 度形此線。配少度 厚先因導本以減析 的藝，銅成，可解 身技制且程層，的 本> 控而製構線板 帶習易。低結導面 膠於容題降的鋁晶 銅較更問可同代液 於相式的，不取寸。 由題方等少成線尺限 200422742 五、發明說明（5) 分完全移除。 四、【實施方式】 本發明的一些實施例會詳細描述如下。然而，除了詳細描 述外，本發明還可以廣泛地在其他的實施例施行，且本發 明的範圍不受限定，其以之後的專利範圍為準。 再者，為提供更清楚的描述及更易理解本發明，圖示内各 部分並沒有依照其相對尺寸繪圖，某些尺寸與其他相關尺 度相比已經被誇張；不相關之細節部分也:未完全身出，以 求圖示的簡潔。 本發明的一較佳實施例為如第五圖所示，首先，在一基板The hole in question is made of copper, which can be recessed or shaped, and the neck can be filled evenly, and the bottle or filling is known, and the hole type is inadequate and the hole is delayed. In it. The reason why the plating of RC aluminum is more important than that of RC aluminum in electrical plating is based on the fact that the copper wire is not small, and the process conductivity is layered. Heterogeneity avoids the fact that the contrast between the crystals is acceptable, and the liquid and the degree form this line. It is easy to make a thin line with a thin and thick guide because of the technique of reducing the analysis. It is made of copper. The low junction guide surface is glued to the aluminum crystal of the capacity problem. The copper can be replaced with the liquid phase in the same way. The ruler ’s rule of thumb is 200422742. 5. The description of the invention (5) is completely removed. 4. [Embodiments] Some embodiments of the present invention will be described in detail as follows. However, in addition to the detailed description, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, which is subject to the scope of subsequent patents. Furthermore, in order to provide a clearer description and easier understanding of the present invention, the parts in the diagram are not drawn according to their relative dimensions, and certain dimensions have been exaggerated compared to other related dimensions; irrelevant details are also not fully shown Out for simplicity of illustration. A preferred embodiment of the present invention is shown in FIG. 5. First, a substrate
第9頁 200422742 五、發明說明（6) 110上形成複數個凹槽120。其形成凹槽120的方法為：在 基板1 1 0之上塗佈光阻，然後以一光罩對光阻曝光後顯 影，以除去凹槽1 2 0區域上方的光阻。再來以顯影後的光 阻為遮罩，對基板1 1 0進行餘刻，以形成凹槽1 2 0。一般省_ 濕蝕刻方式進行基板1 1 0的蝕刻動作，較佳的蝕刻液可以 是氫氧化鈉（NaOH )、氫氟酸（HF )或氫氟酸與氟化銨 \ (N Η 4 F )的混合液。 r 然後，如第六圖所示，將銅膠帶1 6 0貼附於凹槽1 2 0的上 方，並填滿凹槽1 20而無產生空洞等問題。為確保銅膠帶 1 60能容易並確實填滿凹槽120，並與基板1 1 0完全密合， _ 可以對銅膠帶1 6 0施以高溫、高壓或同時施以高溫高壓， 以加強銅膠帶1 6 0與凹槽1 2 0的附著程度。 最後，對已貼有銅膠帶160的基板110進行化學機械研磨至 基板1 10的表面為jJL，將填入凹槽120以外的銅去除，如第 七圖所示，而填滿凹槽1 2 0的銅部分即為銅導線。 本發明適用任何基板，尤其是大尺寸的基板，例如：大尺 寸的液晶面板。再者，銅導線也可以形成於其他結構層之 上，而非限定僅能形成於液晶面板的玻璃基板之上。例 如，銅導線也可以形成於氮化矽（S i Nx )層之上。氮化矽 _ 具有較低的溶點的特性，故適合用於以玻璃為基板的液晶 面板之上。Page 9 200422742 V. Description of the invention (6) A plurality of grooves 120 are formed in 110. The method for forming the groove 120 is: coating a photoresist on the substrate 110, and then exposing the photoresist with a photomask to develop a photoresist to remove the photoresist above the area of the groove 120. Then, using the developed photoresist as a mask, the substrate 1 10 is etched to form a groove 1220. General saving _ Wet etching method is used to etch the substrate 1 10. The preferred etching solution can be sodium hydroxide (NaOH), hydrofluoric acid (HF) or hydrofluoric acid and ammonium fluoride \ (N Η 4 F) Mixed liquid. r Then, as shown in the sixth figure, a copper tape 160 is attached above the groove 1220, and the groove 120 is filled up without problems such as voids. In order to ensure that the copper tape 1 60 can easily and surely fill the groove 120 and fully adhere to the substrate 1 10, _ can apply high temperature, high pressure or high temperature and high pressure to the copper tape 1 60 to strengthen the copper tape The degree of adhesion of 1 6 0 to the groove 1 2 0. Finally, the substrate 110 on which the copper tape 160 has been attached is chemically and mechanically polished until the surface of the substrate 1 10 is jJL, and copper other than the groove 120 is removed, as shown in the seventh figure, and the groove 1 2 is filled. The copper part of 0 is the copper wire. The present invention is applicable to any substrate, especially a large-sized substrate, such as a large-sized liquid crystal panel. In addition, the copper wire may be formed on other structural layers, and is not limited to being formed only on the glass substrate of the liquid crystal panel. For example, copper wires can also be formed on a silicon nitride (S i Nx) layer. Silicon nitride _ has a low melting point, so it is suitable for use on glass-based liquid crystal panels.
第10頁 200422742 五、發明說明（7) 因此，本發明之另一較佳實施例為如第八圖所示，首先， 在一基板110之上形成一氮化石夕層，然後於氮化梦層 17 0上形成複數個凹槽120。其形成凹槽〗2〇的方法為：在 氮化矽層1 7 0之上塗佈光阻，然後以一光罩對光阻曝光後 顯影，以除去凹槽1 2 0區域上方的光阻。再來以顯影後的 光阻為遮罩’對氮化矽層丨7 〇進行蝕刻，以形成凹槽丨2 0 :。 一般以濕#刻方式進行氮化石夕層1 7 〇的餘刻動作。 然後，如第九圖所示，將銅膠帶丨6 〇貼附於凹槽丨2 〇的上 方’並填滿凹槽1 2 〇而無產生空洞、空隙等問題。為確保 銅膠，160能容易並確實填滿凹槽12〇，並與氮化矽層17〇 完全密合，可以對銅膠帶丨6〇施以高溫、高壓或同時施以 高溫高壓，以加強銅膠帶160與凹槽12〇氮化矽層1?〇 合程度。 y切 ^，条對以貼有銅膠帶160的氮化矽層170進行化學機械研 $至氮化矽層170的表面為止，將填入凹槽12〇以外的銅去 =，如第十圖所示，而填滿凹槽丨20的銅部分即為銅導 線0 ^帶160與基板11〇的附著性不夠好，或銅會經由擴散 之中而造成漏電等問題，就必須於在銅 夕 ，、土板11 〇之間形成一層連接層加強附著性或形成 200422742 五、發明說明（8) 一層阻障層防止銅擴散。其連接層或阻障層的形成方法為 先形成連接層或阻障層於凹槽及基板之上，然後再將銅膠 帶1 6 0貼附於連接層或阻障層之上。因此上述之較佳實施 例都可以依此形成方法來形成連接層或阻障層。而連接層 的要求為必須對基板1 1 〇或銅膝帶160都有不錯的附著性。 而對阻障層的要求為必須能夠防止銅的擴散及對基板11 〇 以及銅膠帶1 6 0的附著性皆良好。 本發明之液晶面板的銅導線之形成方法及結構，適用於形 成液晶面板的非顯示區域的導線，以避免銅導線對液晶面 板光源模組所發出的光源於顯示區造成遮蔽或反光的情 況。因此本發明也適用於將晶片在玻璃基板上作封裝 $chip 〇n glass，C0G )的液晶面板。若顯示區的陣列部 刀導線經適當的處理（例如：導線的周邊形成抗反射層， 以減少反光），則陣列的導線亦可以依本發明來形成銅導 線0 ϊ t i所述’本發明揭露了液晶面板的銅導線之形成方 /蓺中5 4。、本發明係利用銅勝帶貼附的方式來取代習知技 ί的均勻ί ΐ if 2電鍍調滿凹槽的方式。由於銅膠帶厚 技藝先形成5 = H，且其空洞或缺陷的問題相較於習知 產生，因此可3 C電鍍方式填滿凹槽的方式更不容易 而且銅導線的製程步ϊ ί f Γ的不均勻或空洞等的問題。 驟也相較於習知技藝的為少，可降低Page 10 200422742 V. Explanation of the invention (7) Therefore, as shown in FIG. 8, another preferred embodiment of the present invention is to first form a nitride layer on a substrate 110, and then to form a nitride nitride layer. A plurality of grooves 120 are formed in the layer 170. The method for forming grooves 20 is: coating a photoresist on a silicon nitride layer 170, and then exposing the photoresist with a photomask and developing the photoresist to remove the photoresist above the groove 120 area. . Then, using the developed photoresist as a mask, the silicon nitride layer 丨 7 is etched to form a groove 丨 2 0:. Generally, the remaining operation of the nitrided stone layer 170 is performed in a wet manner. Then, as shown in the ninth figure, a copper tape 丨 60 was attached to the groove 丨 2 〇 and filled the groove 1200 without problems such as voids and voids. In order to ensure the copper glue, 160 can easily and surely fill the groove 120, and fully adhere to the silicon nitride layer 170. The copper tape can be subjected to high temperature, high pressure or high temperature and pressure at the same time to strengthen The copper tape 160 and the groove 120 have a silicon nitride layer 1 to 100 degree. Cut y, and chemically and mechanically study the silicon nitride layer 170 with the copper tape 160 attached to the surface of the silicon nitride layer 170, and fill the copper other than the groove 120, as shown in the tenth figure. As shown in the figure, the copper part that fills the groove 20 is the copper wire 0. The adhesion between the tape 160 and the substrate 11 is not good enough, or copper may cause leakage through diffusion, etc. A layer of connecting layer is formed between the soil plate 11 〇 to strengthen the adhesion or form 200422742 V. Description of the invention (8) A barrier layer prevents copper from diffusing. The connection layer or the barrier layer is formed by first forming the connection layer or the barrier layer on the groove and the substrate, and then attaching the copper tape 160 to the connection layer or the barrier layer. Therefore, in the above-mentioned preferred embodiments, a connection layer or a barrier layer can be formed according to the formation method. The requirement of the connection layer is that it must have good adhesion to the substrate 110 or the copper knee band 160. The barrier layer is required to be able to prevent diffusion of copper and have good adhesion to the substrate 110 and the copper tape 160. The method and structure for forming copper wires of a liquid crystal panel of the present invention are suitable for forming wires in a non-display area of a liquid crystal panel, so as to prevent the copper wires from shielding or reflecting the light source emitted from the light source module of the liquid crystal panel in the display area. Therefore, the present invention is also applicable to a liquid crystal panel in which a chip is packaged on a glass substrate as $ chip ON glass (COG). If the knife wire of the array part of the display area is appropriately processed (for example, an anti-reflection layer is formed around the wire to reduce light reflection), the wire of the array can also be formed into a copper wire according to the present invention. The formation of the copper wires of the LCD panel square / 蓺 中 5 4. The present invention uses the method of attaching a copper tape to replace the conventional method of uniformly ΐ ΐ if 2 plating to fill the groove. Because the thick technique of copper tape is first formed 5 = H, and the problem of voids or defects is compared to the conventional one, it is more difficult to fill the groove with 3 C plating, and the process steps of copper wires are ϊ f Γ Problems such as unevenness or voids. Compared with the know-how, the number of steps
200422742 五、發明說明（9) 製程成本。而在基板及銅膠帶之間，也可先形成不同的結 構層，以配合不同製程的要求。而且，以銅導線取代鋁導 線，可減少液晶面板導線的R C延遲時間，使大尺寸液晶面 板的解析度與反應速率不因鋁的導電瓶頸而受限。 以上所述僅為本發明之較佳實施例而已，並非用以限定本 發明之申請專利範圍；凡其他為脫離本發明所揭示之精神 下所完成之等效改變或修飾，均應包含在下述之申請專利 範圍。200422742 V. Description of the invention (9) Process cost. Between the substrate and the copper tape, different structural layers may be formed first to meet the requirements of different processes. Moreover, replacing copper wires with aluminum wires can reduce the RC delay time of the liquid crystal panel wires, so that the resolution and response rate of large-sized liquid crystal panels are not limited by the conductive bottleneck of aluminum. The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of patent application of the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following The scope of patent application.
第13頁 中 程 製 銅 藝·， 技圖 知意 習示 係驟 圖步 三之 第面 200422742 圖式簡單說明 第一圖係習知技藝銅製程中，於底材上形成凹槽之步驟示 意圖， 第二A圖係習知技藝銅製程中，於底材及凹槽上形成銅種 晶層之步驟示意圖； 第二B圖係習知技藝銅製程中，於底材及凹槽上形成阻障 層及銅種晶層之步驟示意圖； 進行電鍵使銅填滿及底材表 第四圖係習知技藝銅製程中，進行化學機械研磨，以去除 非凹槽之上的銅以形成銅導線之步驟示意圖； 第五圖係本發明之一較佳實施例中，於基板上形成凹槽之 步驟示意圖； 第六圖係本發明之一較佳實施例中，於基板及凹槽上貼附 銅膠帶之步驟示意圖； 第七圖係本發明之一較佳實施例中，進行化學機械研磨， 以去除非凹槽之上的銅以形成銅導線之步驟示意圖；Page 13 Medium-Range Copper Craft ·, the third step of the third step of the conscious drawing of the technical drawing 200422742 The diagram briefly illustrates the steps of forming a groove on the substrate in the first drawing Figure 2A is a schematic diagram of the steps of forming a copper seed layer on a substrate and a groove in a copper process of a conventional technique; Figure 2B is a diagram of forming a resistance on the substrate and a groove in a copper process of a conventional technique Schematic diagram of the steps of the barrier layer and copper seed layer; the copper is filled with electrical bonds and the substrate table. The fourth picture is a conventional process of copper mechanical polishing to remove copper over non-grooves to form copper wires. The schematic diagram of the steps; the fifth diagram is a schematic diagram of the steps of forming a groove on the substrate in a preferred embodiment of the present invention; the sixth diagram is the adherence of the substrate and the grooves in a preferred embodiment of the present invention Schematic diagram of the steps of copper tape; Figure 7 is a schematic diagram of the steps of chemical mechanical polishing to remove copper on non-grooves to form copper wires in a preferred embodiment of the present invention;
第14頁 200422742 圖式簡單說明 第八圖係本發明之另一較佳實施例中，於基板上形成氮化 矽層，並於氮化矽層上形成凹槽之步驟示意圖； 第九圖係本發明之另一較佳實施例中，於氮化矽層及凹槽 上貼附銅膠帶之步驟示意圖；以及 第十圖係本發明之另一較佳實施例中，進行化學機械研 磨，以去除非凹槽之上的銅以形成銅導線之步驟不意圖。 主要部分之代表符號：Page 14 200422742 Brief description of the diagram The eighth diagram is a schematic diagram of a step of forming a silicon nitride layer on a substrate and forming a groove on the silicon nitride layer in another preferred embodiment of the present invention; the ninth diagram is In another preferred embodiment of the present invention, a schematic diagram of a step of attaching a copper tape on a silicon nitride layer and a groove; and the tenth diagram is a chemical mechanical polishing in another preferred embodiment of the present invention to The step of removing copper above the grooves to form a copper wire is not intended. Representative symbols of the main parts:
1 0底材 20 凹槽 3 0 銅種晶層 4 0 阻障層 5 0銅電鍍膜 110 基板 120 凹槽 160 銅膠帶 170 氮化矽層1 0 substrate 20 groove 3 copper seed layer 4 0 barrier layer 5 copper plating film 110 substrate 120 groove 160 copper tape 170 silicon nitride layer
第15頁Page 15
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92108854A TW594320B (en) | 2003-04-16 | 2003-04-16 | Manufacturing method and structure of copper lines for a liquid crystal panel |
| JP2003385178A JP3902175B2 (en) | 2003-04-16 | 2003-11-14 | Method for forming copper line in liquid crystal panel |
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| TW92108854A TW594320B (en) | 2003-04-16 | 2003-04-16 | Manufacturing method and structure of copper lines for a liquid crystal panel |
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