TWI294696B - Side-emission type led package related application - Google Patents

Side-emission type led package related application Download PDF

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Publication number
TWI294696B
TWI294696B TW094146463A TW94146463A TWI294696B TW I294696 B TWI294696 B TW I294696B TW 094146463 A TW094146463 A TW 094146463A TW 94146463 A TW94146463 A TW 94146463A TW I294696 B TWI294696 B TW I294696B
Authority
TW
Taiwan
Prior art keywords
led
wafer
assembly
light
sealing member
Prior art date
Application number
TW094146463A
Other languages
Chinese (zh)
Other versions
TW200629609A (en
Inventor
Young Sam Park
Hyung Suk Kim
Jung Kyu Park
Ho Sik Ahn
Young June Jeong
Hun Joo Hahm
Bum Jin Kim
Original Assignee
Samsung Electro Mech
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Application filed by Samsung Electro Mech filed Critical Samsung Electro Mech
Publication of TW200629609A publication Critical patent/TW200629609A/en
Application granted granted Critical
Publication of TWI294696B publication Critical patent/TWI294696B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21KNON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/68Details of reflectors forming part of the light source
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/54Encapsulations having a particular shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Planar Illumination Modules (AREA)

Description

1294696 九、發明說明: 【發明所屬之技術領域】 本發明係有關一種側向發射型發光二極體(led)封裝 件’尤其是有關-種側向發射型LED封裝件,能夠二 別提供用於將來自LED曰>{之亦6 μ店6丄 刀 竹木曰日日片之先向上反射之下部結構與 用於將光反射在橫向之上部結構然後結合下部盘上盖 而改良密封構件之成型效率。 ^ 。、、、°構 【先前技術】 本^請案係基於且主張聽年2月3日所中請之韓國 申请案第10-2005-0010046號及2005年5月%日所 之韓國申請案第10-2005_0044649號的優先權’其= 的内容整體併入本文列為參考。 & 隨著電子裝置產業發展,作為下一代顯示器襄置之液 晶顯示ii(LCD)受到注目。由於LCD無法自發性地發光, 故LCD在其背部面板上具有提供光之背光模組。 义第1圖為說明使用於LCD背光模組之相關技術之側向 叙射型LED透鏡之一實例的截面圖。第i圖係說 關技術之㈣發㈣咖透鏡之―實例之美國專利第 6,679,621號所揭露之LED透鏡的截面。 如第1圖所說明’上述美國專利所揭露之l肋透鏡 10包含具有反射表面I和折射表面上部部 2 一折射表面i56之下部部份。再者,當由三維觀點^ LED透鏡10相對光軸43是對稱的。 ^ 在㈣透鏡中,由焦點F所放射出之光在經由折射表 93323 5 1294696 面Η而放射至外部之前先由反射表面 表面156直接放射至外部。 然而,相關技術之LED透鏡1〇具有下述問題。 首先,LED透鏡1G難以製造。亦即,難^由形成 ^法精確_成折射表面_下部折射表面156的連接部 份L及反射表面ϊ的内部尖端p,而在形成咖透鏡時; 在連接部份L上或其鄰近之透鏡表面上產生條帶㈣p)。 再者,在將樹脂填充至收納由焦點F所表示之LED曰 =之空腔c中時,需要防止氣泡之額外程序。亦即,將 晶片安置在基板(未示出)上’LED透鏡1〇與基板組合使得 LED晶片可位在LED透鏡10之空間c中,再將透明樹脂 注射至空腔C中。然而’依據上述方法,有樹脂並未完全 地填充至空腔C中而會產生氣泡的可能性。因此,需要經 由空氣出口移除氣泡之額外程序。然而,儘管有額外的程 序但依然存在氣泡會殘存的可能性,其會劣化LED封裝件 的光學特性。1294696 IX. Description of the Invention: [Technical Field] The present invention relates to a lateral emission type LED package (LED) package, in particular, a lateral emission type LED package, which can be provided separately The sealing member is improved by first reflecting the lower structure of the LED 曰>{6 店6 丄6 竹 竹 曰 片 片 片 用于 用于 用于 用于 反射 反射 反射 反射 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良 改良Forming efficiency. ^. , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The priority of '10-2005_0044649' is incorporated herein by reference in its entirety. & With the development of the electronic device industry, liquid crystal display ii (LCD), which is the next generation of display devices, has attracted attention. Since the LCD does not emit light spontaneously, the LCD has a backlight module that provides light on its back panel. Fig. 1 is a cross-sectional view showing an example of a side-projection type LED lens used in the related art of an LCD backlight module. Fig. i is a cross section of an LED lens disclosed in U.S. Patent No. 6,679,621, the disclosure of which is incorporated herein by reference. As described in Fig. 1, the rib lens 10 disclosed in the above U.S. Patent includes a portion having a reflecting surface I and a refractive surface upper portion 2 and a refractive surface i56. Furthermore, when viewed from a three-dimensional perspective, the LED lens 10 is symmetrical with respect to the optical axis 43. ^ In the (four) lens, the light emitted by the focus F is directly radiated to the outside by the reflective surface 156 before being radiated to the outside via the refraction table 93323 5 1294696. However, the related art LED lens 1 has the following problems. First, the LED lens 1G is difficult to manufacture. That is, it is difficult to form the connecting portion L of the refractive surface_lower refractive surface 156 and the inner tip p of the reflective surface ,, while forming the coffee lens; on or adjacent to the connecting portion L A strip (4) p) is produced on the surface of the lens. Further, when the resin is filled into the cavity c in which the LED 曰 indicated by the focus F is accommodated, an additional procedure for preventing the bubble is required. That is, the wafer is placed on a substrate (not shown). The LED lens 1 is combined with the substrate so that the LED wafer can be positioned in the space c of the LED lens 10, and the transparent resin is injected into the cavity C. However, according to the above method, there is a possibility that the resin is not completely filled into the cavity C to generate bubbles. Therefore, an additional procedure for removing air bubbles through the air outlet is required. However, despite the extra procedures, there is still the possibility that bubbles will remain, which may degrade the optical characteristics of the LED package.

反射,或經由折射 【發明内容】 因此,本發明係有關一種側向發射型LED封裝件,其 實質地排除起因於相關技術之限制及缺點的一種或多種問 題0 本發明之目的係提供一種侧向發射型LED封裝件,能 夠藉由分別提供用於將來自LED晶片之光向上反射之下 部結構與用於將該光反射在橫向之上部結構以及結合下部 與上部結構,以改良密封構件之成型效率且因此改良製造 6 93323 .1294696 效率。 祧明中且^ 他叙點、目的、及特點將列於下述-部份 在檢視下述說明時對熟悉此項技藝者顯 專利==自本發明之實務學習之。由說明及其請求之 Ιϋί隨附之圖式所特別指出之結構可實現及獲 致本赉明之目的及其他優點。 =了達錢些目的及其他優點且依據本發明之目的, 包=廣泛地說明,係提供—種LED封裝件,其 :.led曰曰片;下部結構,具有用於將來自㈣晶片之 =上反射同時支撐LED晶片之自LED晶片向上且向外 透明卩鏡子,及形成在1&quot;部鏡子中及LED晶片的周圍 2擒封構件;以及上部結構,用於將由下部結構所向上 ,之光反射至徑橫向(radial lateral direc 下部結構之上部部份。 熟LLED封料巾,上料構具有:反射料,具有相 热生、、、頃斜之反射表面’用於反射由下部結構所反射之光 ;”向,以及用於支樓反射部件且結合於下部結構之上 部份之支撐件。 ^在LED封装件中,上部結構包括透明構件,具有用於 將來自下部部份之光反射於橫向且相對於軸線傾斜之反射 f面及用於將由反射表面所反射之光射出至該透明構件 外部之射出表面。 含 依據本發明之一方面,係提供一種LED封裝件,其包 led晶片’·下部結構,具有自LED晶片向上且向外延 93323 7 1294696 伸之下部鏡子,用以將來自LEDW之光向上反射同 樓LED晶片,及具有填充在下部鏡子中及咖晶片周圍 之透明密封構件;以及上部結構,具有包含相對於轴線傾 斜以將由下部結構所反射之光反射至徑橫向之反射表面之 反射部件,及結合於透明密封構件之上部部份以支撐 部件之複數個插梢(pin)。 依據本發明之另一方面,係提供一種led封裝件,其 包含:LED晶片;下部結構,具有自咖晶片向上且㈣ 延伸之下部鏡子’用以將來自LED晶片之光向上反射同時 支撐LED晶片,具有填充在下部鏡子中及LED晶片周圍 之透明密封構件’及具有形成在下部鏡子之外周緣周圍之 支持物;以及上部結構’具有包含相對於軸線傾斜以將由 下部結構所反射之光反射至徑橫向之反射表面之反射部 件,及結合於支持物以支撐反射部件之複數個插梢。° 依據本發明之又另一方面,係提供一種LED封裝件, 其包含:LED晶片;下部結構,具有自LED晶片向上且向 =延伸之下部鏡子,用以將來自LED晶片之光向上反射; 時支撐LED晶片,及具有填充在下部鏡子中及led晶片 周圍之透明密封構件;以及透明上部結構,具有相對於軸 線傾斜以將由下部結構所反射之光反射至徑橫向之反射表 面,及用於將由反射表面所反射之光放射至外部之射出^ 面’且該透明上部結構具有其背侧結合於樹脂之上部表面。 依據本發明之再另一方面,係提供一種j^ED封裝件, 其包含:LED晶片;下部結構,具有自LED晶片向上且向 93323 8 1294696 ::::之下部鏡子’用以將來自⑽晶片之光向上反射同 守牙:LED晶片,及填充在τ㈣子及_ 上部半球形透明密封構件;以及透明上部結構,具有= 於軸線傾斜以將由下部結制反狀光反射至徑橫向之反 射表面’及用於將由反射表面所反射之光放射至外部之射 出表面,且該透明上部結構結合下部結構之上邊緣。 在L E D封裝件中,上部結構係由高反射率之金 合物所製成。 ^ 在LED封裝件中,下部鏡子係由高反射率之金屬或 合物所製成。 應瞭解本發明之前述一般說明及下述詳細說明係示例 及闡釋性而意欲提供所請求之本發明之進一步闊釋。 依據本發明之再另一方面,係提供一種led組褒件 (assembly),包括:LED晶片;密封LED晶片且配置成自 LED晶片向上放射光之下部結構;用於安置下部結構之美 板;以及支撐在基板上以將由下部結構向上放射之光在橫 向放射狀地反射之上部結構。 ^ 在led組裝件中,上部結構可包括··具有用於將下部 、’、口構所反射之光反射於橫向之相對於軸線傾斜之反射表面 之反射部件;以及用於支撐反射部件之結合於下部結 上部部份之支撐件。 在此情形下,支撐件可包括結合於透明密封構件之上 部部份之複數個插梢。插梢較佳藉由干涉配合(interference fit)、接合(bonding)及焊接(soldering)之至少一者予以固定 93323 9 * !294696 步包括數目相當於插梢且 至基板。又,LED組裝件可進一 固定於基板以接收插梢之支持物 在LED組裝件中, 結構隔開。 在LED組裝件中, 模具所製成。 上部結構較佳以預定的距離與下部 上部結構較佳係由金屬或高反射率 在㈣組裝件中,下部結構可包括:支擇LED晶片 ^下部鏡子’該下部鏡子自LED晶片及周圍向上 ^㈣晶片之光向上反射;以及形成在下部鏡子内^ led晶片周圍之透明密封部件。 在LED組裝件中,下部結構可包括:支擇咖晶片 之底座;以及設置在底座上以密封LED晶片之透明密封部 又,在LED組裝件中,基板較佳為其中安裝有led 組裴件之背光單元的反射板(reflect〇r plate)。 • 依據本發明之又另一方面,係提供一種LED組裝件, 包括:LED晶片;密封LED晶片且配置成將來自咖晶 片之光向上放射之下部結構;用於安置下部結構之基板= 以預定的距離與下部結構隔開且配置在基板上之透日^板;’ 以及配置在透明板之下侧以放射狀地反射由下部結構向上 放射之光於橫向之上部結構。 在LED組裝件中,上部結構較佳具有相對於軸線傾斜 以反射由下部結構所反射之光於橫向之反射表面,及貼附 於透明板下側之平頂表面(flat top surface)。 ίο 93323 1294696 在LED組裝件令,上部結構較佳貼附於透明板之下 二或射出成型於透明板之下側。此外,上部結構較佳係 由向反射率模具或金屬所製成。 · ” 在LED組裝件中,上部結構較佳 結構隔開。 财乂預疋的距離與下部 在led組裝件令,下部結構可包括:支撐LED晶片 ,下部鏡子,該下部鏡子自LED晶片及周圍向上延伸以向 上反射來自LED晶片之弁· u B游4、士 尤,以及形成在下部鏡子内部及 LED晶片周圍之透明密封部件。 在LED組裝件中,下部結構可包括:支撐咖晶片 之底座;以及設置在底座上以密封LED晶片之透明密封部 件0 在LED組裝件中,基板較佳為其中安裝有㈣组裝 件之背光單元的反射板。 【實施方式】 現在詳細說明本發明之較佳實例,搭配著隨附的圖式 說明實施例。 T先’參照第2至4圖’說明依據本發明第一實例之 LED封裝件。在圖式中’第2圖為依據本發明第一實例之 LED封裝件的分解立體圖,f 3圖為說明依據第―實例之 LED封裝件之結合狀態的立體圖,第4圖為沿著第3圖之 線IV-IV取得的截面圖,及第5圖為說明依據本發明第一 貫例之LED封裝件之操作的示意截面圖。 參照第2至4圖’本發明之LED封裝件1〇〇包含:㈣ 93323 11 1294696 用Γ來自LED晶片之光向上反射同時支樓 向上 下結構11G ;以及用於將由下部結構110所 评二之光反射至徑橫向且結合於下部結構110之上部 伤之上部結構130。 . 下部結構110包含主體112及作為支撐led晶片 之底部而在主體112内部之底座116。使主體112 :成凹陷以形成凹陷空腔c,且在其表面上具有下部鏡子 102 2t,空腔C具有設置在其底部上以支撐LED晶片 ϋ座116。將密封構件120填充至LED晶4102的 周圍中從而可自外部密封LED晶片】02。 下部鏡子114自LED晶片1〇2向上且向外延伸,以將 來自咖晶片102之光向上反射,如第5圖所示。下部鏡 子114包含如所示般彼此連接之複數個平面。在其他構型 中,下部鏡子114可包含形成為將來自le 向上及對著上部結構130反射之單一曲面平面(eu= plane)或複數個曲面平面。 、下部結構110之主體112可利甩切割、 成型(molding)予以形成,且可使用金屬《聚合物與下部鏡 子Π4—體製造。在該種情況下,下部結構11〇之主體 兵下錢子114皆使用高反射率之金屬或高反射率之聚合 物予以形成。 〇 對尚反射率之聚合物而言,可使用Nmiuwa及 NM04WA為(0tsuka化學公司之產品名)。由於上述材料在 約⑽。C之高溫下顯示高反射率’故適合作為下部結構之 93323 12 .1294696 '主體112及/或下部鏡子114的材料。更明確地說, NM114WA在470随波長具有88·3%之初始反射率且兩小 時後維持78.0%之反射率。NM〇4WA在47〇nm波長具有 89·0%之初始反射率且兩小時後維持89.0%之反射率。 • 不像此構型,主體112可由低反射率之金屬或聚合物 所製成’且下部鏡子114可以高反射率膜之形式予以制 ,備。此膜可使用高反射率之金屬或上述之高反射率聚= 予以實現。 • 底座116可作成平坦者,且LED晶片102安置在其 上。虽然,爹照第4a圖,次底座(sub_m〇unt)1〇6可安置在 底座116上且LED晶片102貼附於次底座1〇6。 _密封構件Π〇係由透明樹脂所製成。對密封構件而 =可選擇與led晶片102具有類似熱膨脹率及折射率之 樹脂。尤其,石夕不僅具有優異的光學特性(由於大折射率) 及優異的抗變黃性(亦即由單—波長絲造成之品質改變) 籲而且甚至在硬化後亦保持膠狀或彈性體狀態,因此可穩定 地保護LED晶片102不會遭受到衝擊及振冑。 ^ 上部結構13〇包含漏斗狀主體132及用於支擇上部处 2 一之連結於密封構件120之上部部份之三個_ (不圖出其中兩個)。上部結構130整體而言為三腳 (比?〇句形狀。再者,上部結構13〇之主體132在其下表面 鏡子134。上部鏡子134除了所示之漏斗开;狀 ^有各式各樣的形狀如圓錐狀及些微膨脹之圓錐 93323 13 1294696 將上部鏡子134配置成反射光L(其係由led晶片 所產生且由下部鏡子114所向上反射者)於橫向。此外 部鏡子134絲自LED晶片1〇2且直接到達上部部份 L1反射至橫向。 同時,將上部鏡子134配置成其包含頂點?之 可與LED晶片102之焦點F對準。此處,焦點F係指 作為發光源之LED晶片102之中心點。 一就此而言,上部結構130之主體132可利用洗鑄、切 告'J、及成料以形成’且可使用金屬或聚合物與上部鏡子 134 -體製造。在該種情況下,上部結構i3Q之主體^ 與上部鏡子134皆使用高反射率之金屬或高反个入 物予以形成。 干〈來δ 不像此構型,上部結構之主體132可由低反射率之金 屬或聚合物所製成,且上部鏡子134可以高反射率膜之_ 式予以製備。此膜可使用高反射率之金屬或上述之高反射 率聚合物予以實現。再者,對具有優異反射率之射2材料 (injection material)而言’現存含有Ti〇2之材料。 ’ 插梢136係黏附於或嵌入密封構件12〇中,以將上邙 結構130結合於下部結構11〇,且插梢136具有不會對: 上部鏡子134反射至横向之光L有影響之直徑,較佳的直 控為小於〇.4mm。 在製造過程中,首先製造下部結構110,將led晶片 1〇2安置在底纟116上’再倒下透明樹脂,從而形成密封 構件120。之後,使上部結構13〇結合於密封構件因 93323 14 •1294696 而完成LED封裝件ι0〇。 =而:,雖然未圖示出,在密封構物完全硬化 由=將插梢136以狀的深度嵌人密封構件m卜藉 ^ ^ ^ 再干ί2ϋ I固地黏附於插梢136, • 礼構13G自㈣結合於下部結構110。 片明樹脂由上倒下至其上安置有―晶 之下邛結構110之空腔c中,因此宓 形成過程變得容易。再者,此在封構件120的 &gt;產生氣泡,其在冷在封構件120之樹脂中 生氣泡的缺點 中會洛發’因此改良相關技術產 第6圖為說明依據本發明第二實例之改良咖 的为解立體圖。參昭第6圄衣牛 ”夕… 圖LED封裝件200與上述第一 周例之LED封裝件J 〇〇實質 外用綾卜w 、貝上相冋,但在下部結構212的 外周緣上形成有支持物218, &gt; 之上邻处Μ 立心成對應於廷些支持物218 自· 236。因此,對相對應的元件給予 自起始之類似的元件符號並省略其敘述。 2下部結構21G上形成接收插梢,236之支持物 218 ’且在上部結構230結合於下邻处糂 、 #入支持物7^ 士 口於下邛結構21〇時將插梢236 甘入入克持物218中’則結合過程 至變得更簡單。 ^更4且製造方法甚 弟7圖為依據本發明第r垂也丨士 τ ^ 圖…圖為說明第7圖之件::裝:的截面 圖,及第9圖為說明依據本第_:之&quot;°:悲的立體 操作的圖示。 以—“之咖封裝件之 93323 15 1294696 參照第7及8圖,LED封裝件3〇〇包含:LED晶片3〇2,· 用於支撐LED晶片302同時將來自LED晶片3〇2之光向 上反射之下部結構310;以及用於將由下部結構31〇所向 上反射之光反射至徑橫向且結合於下部結構31〇之上部部 份之上部結構3 3 0。 下部結構310包含主體312及在主體312内部用於支 撐LED晶片302之平坦底座316。 主體312在其内部成凹陷以形成凹陷空腔c,且在其 表面上具有下部鏡子314。再者,將密封構件咖填充至 在玉脸C中之LED晶片302的周圍中,從而可自外部密 封LED晶片302。 ^ 、下部鏡子3U自LED晶片3〇2向上且向外延伸且配置 成將來自LED晶片302之光向上反射,如第9圖所示。下 部鏡子3U包含如所示彼此連接之複數個平面。在其他構 型中,下部鏡子314可包含形成為將來自LED晶片3〇2之 光向上及對著上部結構330反射之單—曲面平面或複數個 曲面平面。 下。Μ吉構31〇之主體312可利用洗鱗或切割予以加 工,且可使用金屬或聚合物與下部鏡子314 一體製造。在 二他構型中’下部結構31〇之主體可使用聚合物予以 A成且下部鏡子314可以金屬層之形式予以製備。 工,下指構31〇之主冑312可利用洗鑄或切割予以加 ^ ’且可使用金屬或聚合物與下部鏡子3l4—體製造。在 與下部鏡子3U-體形成下部結構31〇之主體312的情形 93323 16 1294696 下,這些元件可使用高反射率 予以形成。 之金屬或高反射率之聚合物 對高反射率之聚合物而言,可使用nmii4wa及BACKGROUND OF THE INVENTION Accordingly, the present invention is directed to a lateral emission type LED package that substantially obviates one or more problems due to limitations and disadvantages of the related art. The object of the present invention is to provide a lateral direction. The emissive LED package can improve the molding efficiency of the sealing member by separately providing an upper structure for reflecting light from the LED wafer and reflecting the light in the lateral upper structure and the lower and upper structures respectively And thus improved the efficiency of manufacturing 6 93323 .1294696.祧明中^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ The objectives and other advantages of the present invention can be realized and attained by the structure particularly pointed out in the appended claims. In accordance with the purpose of the present invention, package = broadly illustrated, is provided with an LED package, which: .led cymbal; lower structure, with for the wafer from (four) = The upper reflector simultaneously supports the LED chip from the LED wafer to the outward and outward transparent mirror, and is formed in the 1&quot; mirror and around the LED wafer; and the upper structure for the light to be turned up by the lower structure Reflected to the radial direction (radial lateral direc upper part of the lower structure. Cooked LLED sealing towel, the upper material has: reflective material, with phase heating, and the oblique reflecting surface is used for reflection reflected by the lower structure Light;", and a support for the reflective member of the branch and bonded to the upper portion of the lower structure. ^In the LED package, the upper structure includes a transparent member having light for reflecting light from the lower portion a reflective f-plane that is laterally and obliquely inclined with respect to the axis and an exit surface for emitting light reflected by the reflective surface to the outside of the transparent member. According to an aspect of the invention, an LED seal is provided The package has a packaged led wafer'. The lower structure has a lower mirror from the LED wafer and extends to the extension 93323 7 1294696 for reflecting the light from the LEDW upwards on the same floor LED chip, and having the filling in the lower mirror and the coffee a transparent sealing member around the wafer; and an upper structure having a reflective member including a reflective surface inclined with respect to the axis to reflect light reflected by the lower structure to the laterally-transparent reflective surface, and a portion coupled to the upper portion of the transparent sealing member to support the member According to another aspect of the present invention, there is provided a LED package comprising: an LED wafer; a lower structure having a self-curing wafer upward and (iv) extending a lower mirror for receiving from the LED The light of the wafer is reflected upward while supporting the LED wafer, having a transparent sealing member filled in the lower mirror and around the LED wafer and having a support formed around the periphery of the lower mirror; and the upper structure 'having a tilt with respect to the axis Reflecting the light reflected by the lower structure to the reflective surface of the laterally reflective surface, and combining a support for supporting a plurality of pins of the reflective member. According to still another aspect of the present invention, there is provided an LED package comprising: an LED wafer; a lower structure having a mirror extending upward from the LED wafer and extending downward For reflecting light from the LED chip upward; supporting the LED wafer, and having a transparent sealing member filled in the lower mirror and around the led wafer; and a transparent superstructure having a tilt with respect to the axis to be reflected by the lower structure The light is reflected to the laterally-reflecting surface, and the emitting surface for radiating the light reflected by the reflecting surface to the outside and the transparent upper structure has its back side bonded to the upper surface of the resin. According to still another aspect of the present invention In one aspect, a j ^ ED package is provided, comprising: an LED wafer; a lower structure having a mirror from the LED wafer upward and toward the back of the 93323 8 1294696 :::: to reflect the light from the (10) wafer upward Teeth: LED wafer, and filled in τ (four) sub and _ upper hemispherical transparent sealing member; and transparent superstructure, with = tilted on the axis to be under The reflected light of the anti-reflection surface of the light-reflecting invoicing transverse to the path 'is used by the reflecting surface and emitted to the outside of the exit surface, and binding the transparent upper structure on the lower edges of the structure. In the L E D package, the upper structure is made of a high reflectivity metal. ^ In the LED package, the lower mirror is made of a highly reflective metal or compound. It is to be understood that the foregoing general description of the invention, According to still another aspect of the present invention, there is provided a LED assembly comprising: an LED wafer; a sealed LED wafer and configured to emit a light lower structure from the LED wafer; a slab for arranging the lower structure; Supported on the substrate to radially radiate light from the lower structure to reflect the upper structure in a lateral direction. ^ In the LED assembly, the upper structure may include a reflective member having a reflective surface for reflecting the light reflected from the lower portion, the mouth structure, and being inclined relative to the axis in the lateral direction; and a combination for supporting the reflective member The support part of the lower part of the lower part. In this case, the support member may include a plurality of spigots coupled to the upper portion of the transparent sealing member. The ferrule is preferably secured by at least one of interference fit, bonding, and soldering. 93323 9 * !294696 The step includes a number corresponding to the tip and to the substrate. Moreover, the LED assembly can be further secured to the substrate to receive the support of the spigot. In the LED assembly, the structure is spaced apart. In the LED assembly, the mold is made. Preferably, the upper structure is preferably at a predetermined distance from the lower upper structure by metal or high reflectivity in the (four) assembly, and the lower structure may include: selecting the LED wafer ^ lower mirror 'the lower mirror from the LED wafer and surrounding upwards ^ (4) The light of the wafer is reflected upward; and a transparent sealing member formed around the wafer in the lower mirror. In the LED assembly, the lower structure may include: a base for supporting the wafer; and a transparent sealing portion disposed on the base to seal the LED chip. In the LED assembly, the substrate preferably has a led group member mounted therein a reflector plate of a backlight unit. • According to still another aspect of the present invention, there is provided an LED assembly comprising: an LED wafer; sealing the LED wafer and configured to radiate light from the coffee wafer upwardly to the lower structure; and to place the substrate of the lower structure = to be predetermined The distance is separated from the lower structure and disposed on the substrate; and the lower side of the transparent plate is disposed to radially reflect the upwardly radiated light from the lower structure to the lateral upper structure. In the LED assembly, the upper structure preferably has a flat top surface that is inclined with respect to the axis to reflect the light reflected by the lower structure in the lateral direction and attached to the lower side of the transparent plate. Ίο 93323 1294696 In the LED assembly, the upper structure is preferably attached to the transparent plate or the injection molding is formed on the lower side of the transparent plate. Further, the superstructure is preferably made of a reflectance mold or metal. · In the LED assembly, the upper structure is preferably structurally separated. The distance between the front and the lower part of the LED assembly, the lower structure may include: supporting the LED chip, the lower mirror, the lower mirror from the LED chip and surrounding Extending upward to reflect upwardly from the LED chip, U B 4, Shi You, and a transparent sealing member formed inside the lower mirror and around the LED wafer. In the LED assembly, the lower structure may include: a base supporting the coffee chip And a transparent sealing member disposed on the base to seal the LED chip. In the LED assembly, the substrate is preferably a reflective plate in which the backlight unit of the (4) assembly is mounted. [Embodiment] The present invention will now be described in detail. The preferred embodiment is described with reference to the accompanying drawings. T first, with reference to Figures 2 to 4, an LED package according to a first example of the present invention is illustrated. In the drawings, Figure 2 is the first in accordance with the present invention. An exploded perspective view of an example of an LED package, a f 3 diagram illustrating a combined state of the LED package according to the first example, and a fourth section taken along a line IV-IV of FIG. And Fig. 5 is a schematic cross-sectional view showing the operation of the LED package according to the first embodiment of the present invention. Referring to Figures 2 to 4, the LED package 1 of the present invention comprises: (4) 93323 11 1294696 The light of the LED chip is reflected upwards while the upstairs structure 11G of the support; and the light reflected by the lower structure 110 is reflected to the lateral direction and is bonded to the upper structure of the lower structure 110. The lower structure 110 includes the main body. 112 and a base 116 inside the body 112 as a bottom supporting the led wafer. The body 112 is recessed to form a recessed cavity c, and has a lower mirror 102 2t on its surface, the cavity C having a bottom C on its bottom To support the LED wafer holder 116. The sealing member 120 is filled into the periphery of the LED crystal 4102 so that the LED wafer can be sealed from the outside. 02. The lower mirror 114 extends upward and outward from the LED wafer 1〇2 to carry the wafer from the wafer. The light of 102 is reflected upwards, as shown in Figure 5. The lower mirror 114 includes a plurality of planes that are connected to each other as shown. In other configurations, the lower mirror 114 can be formed to be directed upwards and upwards from le The upper surface 130 reflects a single curved plane (eu=plane) or a plurality of curved planes. The main body 112 of the lower structure 110 can be formed by cutting and molding, and the metal "polymer and the lower mirror Π4" can be used. In this case, the lower structure 11 of the main body of the lower body 114 is formed using a high reflectivity metal or high reflectivity polymer. 〇 For the reflectivity of the polymer, can be used Nmiuwa and NM04WA are (product names of 0tsuka Chemical Co., Ltd.). Since the above materials are in about (10). The high reflectance at the high temperature of C is suitable as the material of the lower structure 93323 12 .1294696 'body 112 and/or lower mirror 114. More specifically, the NM114WA has an initial reflectance of 8.8 with wavelength at 470 and a reflectance of 78.0% after two hours. NM 〇 4WA has an initial reflectance of 89·0% at a wavelength of 47 〇 nm and a reflectance of 89.0% after two hours. • Unlike this configuration, the body 112 can be made of a low reflectivity metal or polymer&apos; and the lower mirror 114 can be fabricated in the form of a high reflectivity film. This film can be realized using a metal having a high reflectance or a high reflectance poly = as described above. • The base 116 can be made flat and the LED wafer 102 is placed thereon. Although, in accordance with Fig. 4a, a submount (1) can be placed on the base 116 and the LED wafer 102 is attached to the submount 1〇6. The sealing member is made of a transparent resin. For the sealing member, a resin having a thermal expansion coefficient and a refractive index similar to that of the LED wafer 102 can be selected. In particular, Shi Xi not only has excellent optical properties (due to large refractive index) and excellent resistance to yellowing (that is, quality changes caused by single-wavelength filaments), but also maintains a gel or elastomer state even after hardening. Therefore, the LED chip 102 can be stably protected from impact and vibration. The upper structure 13A includes a funnel-shaped body 132 and three _ (not shown) for connecting the upper portion 2 to the upper portion of the sealing member 120. The upper structure 130 is generally three-legged (compared to the shape of the haiku sentence. Further, the main body 132 of the upper structure 13 is on the lower surface mirror 134. The upper mirror 134 is opened in addition to the funnel shown; The shape is such as a conical shape and a slightly expanded cone 93323 13 1294696. The upper mirror 134 is configured to reflect light L (which is generated by the LED wafer and reflected upward by the lower mirror 114) in the lateral direction. This external mirror 134 is wire-driven from the LED. The wafer 1〇2 and directly reaches the upper portion L1 to be reflected to the lateral direction. Meanwhile, the upper mirror 134 is configured such that it contains an apex, which can be aligned with the focus F of the LED wafer 102. Here, the focus F is referred to as a light source. The center point of the LED wafer 102. In this regard, the body 132 of the upper structure 130 can be fabricated using a die cast, a 'J, and a material to form' and can be fabricated using a metal or polymer and an upper mirror 134 body. In this case, both the main body of the upper structure i3Q and the upper mirror 134 are formed using a metal of high reflectivity or a high-reflection. Dry < δ Unlike this configuration, the main body 132 of the upper structure may have a low reflectance. Metal or polymerization The object is made, and the upper mirror 134 can be prepared by a high reflectivity film. The film can be realized by using a high reflectivity metal or the above high reflectivity polymer. Furthermore, for an excellent reflectance shot 2 In the case of the injection material, 'the material containing Ti〇2 is present.' The tip 136 is adhered or embedded in the sealing member 12〇 to bond the upper structure 130 to the lower structure 11〇, and the insertion tip 136 has No: The upper mirror 134 reflects the diameter of the lateral light L, and the preferred direct control is less than 〇.4 mm. In the manufacturing process, the lower structure 110 is first fabricated, and the led wafer 1〇2 is placed at the bottom. On the 116', the transparent resin is poured down again to form the sealing member 120. Thereafter, the upper structure 13〇 is bonded to the sealing member to complete the LED package ι0〇 by 93323 14 • 1294696. = and: although not shown, The sealing structure is completely hardened by = the insertion tip 136 is embedded in the depth of the sealing member m. ^ ^ ^ is further dried ί 2 ϋ I firmly adheres to the spigot 136, • the ritual 13G is bonded to the lower structure 110 from (4). The resin is poured from top to bottom There is a cavity c in the underlying structure 110, so that the formation process of the crucible becomes easy. Further, this produces bubbles in the sealing member 120, which has the disadvantage of generating bubbles in the resin which is cooled in the sealing member 120. In the case of the improvement of the related art production, FIG. 6 is a perspective view illustrating the modified coffee according to the second example of the present invention. The sixth embodiment of the LED package 200 and the first week example The LED package J 〇〇 is substantially externally used, and the support 218 is formed on the outer periphery of the lower structure 212, and the upper side is adjacent to the support 218. Since · 236. Therefore, the corresponding elements are given the same element symbols from the beginning and the description thereof is omitted. 2 The lower structure 21G is formed with a support 218' for receiving the spigot, 236, and the ferrule 236 is inserted into the lower structure 230 when the upper structure 230 is coupled to the lower 糂In the holding material 218, the process is combined to become simpler. ^More 4 and the manufacturing method is very good. The figure 7 is based on the present invention. The figure is shown in the figure of Fig. 7: the sectional view of the device: and the figure 9 is the explanation according to the present invention. :The &quot;°: illustration of the sad three-dimensional operation. Referring to Figures 7 and 8, the LED package 3〇〇 includes: LED chip 3〇2, for supporting the LED chip 302 while lifting the light from the LED chip 3〇2 a reflective lower portion structure 310; and a light reflecting upwardly reflected by the lower structure 31〇 to the lateral direction and coupled to the upper portion of the lower structure 31〇 upper portion structure 310. The lower structure 310 includes the body 312 and the body The inner portion 312 is internally recessed to support the recessed cavity c and has a lower mirror 314 on its surface, and the sealing member is filled to the jade face C. In the periphery of the LED chip 302, the LED chip 302 can be sealed from the outside. ^, the lower mirror 3U extends upward and outward from the LED chip 3〇2 and is configured to reflect the light from the LED chip 302 upward, as in the ninth The lower mirror 3U includes a plurality of planes that are connected to each other as shown. In other configurations, the lower mirror 314 can include a single sheet formed to reflect light from the LED wafer 3〇2 and toward the upper structure 330. - surface flat Or a plurality of curved planes. The lower body 312 can be processed by washing scales or cutting, and can be fabricated integrally with the lower mirror 314 using metal or polymer. In the two configurations, the lower structure 31〇 The main body can be made of a polymer and the lower mirror 314 can be prepared in the form of a metal layer. The main 胄 312 of the lower finger 31 can be added by washing or cutting and can be used with metal or polymer. The lower mirror 3l4 is manufactured in a body. Under the condition of the main body 312 forming the lower structure 31〇 with the lower mirror 3U-body, these elements can be formed using high reflectivity. The metal or high reflectivity polymer pair is high. For polymers with reflectivity, use nmii4wa and

麵4WA(為0tsuka化學公司之產品名)。由於上述材料在 約180C之高溫下顯示高反射率,故適合作為下部結構之 主體312及/或下部鏡? 314的材料。更明確地說, 丽U4WA在物㈣波長具有88 3%之初始反射率且兩小 時後維持78.0〇/〇之反射率。NM〇4WA在47〇咖波長具有 89.0%之初始反射率且兩小時後維持89〇%之反射率。 ,不像此構型’主體312可由低反射率之金屬或聚合物 所製成’且下部鏡+ 314可以高反射率膜之形式予以努 備。此膜可使用高反射率之金屬或上述之高反射率聚合物 予以實現。 一密封構件320係由透明樹脂所製成。對密封構件而 e,可璲擇與LED晶片302具有類似熱膨脹率及折射率之 樹脂。巧,、石夕不僅具錢異的光學特性(因其顯示非常少 之由於單_波長之絲造成之改變如黃化且具有大折射率) 而且甚至在硬化過程後亦保持膠狀或彈性體狀態,因此可 穩疋地保護LED晶片302不會遭受到衝擊及振動。 立硬化之密封構件320具有平坦之上表面及形成在其下 刀與LED晶片302周圍之晶片接收部份324。 •上部結構330為藉由使透明樹脂成型而獲得之一體型 (mtegraMype)構件,且在其結構中填充有主體332。主體 332在其上部部份上具有用於將來自下部部份之光[I及 93323 17 1294696 -L2反射於徑向之反射表面334,且在其侧面上具有用於將 由反射表面334所反射之光L1&amp;L2放射至外部之射出_ 面 336。 — f射表面334可具有相對於通過内部尖端(cusp)p及 LED晶片之焦點F的軸線A為線性對稱之形狀。因此,光 L1及L2射入反射表面334會被反射至徑向。 就此而3,上部結構330具有平坦底部338,因此在 結合於下部結構310時與密封構件32〇之上表面緊密 _ 地平面接觸。 ’、山 “因此,若上部結構330使用與密封體320具有相同折 射率之材料予以成型,則來自LED晶片3〇2之焦點之光 L1及L2可自密封構件32〇傳播至上部結構33〇而沒有折 射或反射,如第9圖所示。 在製造過程中,首先製造下部結構310,將led晶片 302女置在下部結構31〇之底部上之底座gw上,再倒下 _透明樹脂,從而形成密封構件32〇。之後,使上部結構33〇 結合於密封構件32〇,因而完成LED封裝件300。 就此而言,上部結構33〇可在事先予以分別地形成, 再將密封構件320之上表面322與上部結構33〇之底部 放ί在:起以使彼此接觸,以及在密封構件320硬化之前 對前述元件施加壓力使得這些元件可與彼此結合。 曰藉由這樣做,將透明樹脂由上倒下至其上安置有lED 曰曰片302之下部結構31〇之空腔c _,因此密封構件 的形成過程變得容易。再者,即使在密封構件似之樹脂 93323 18 1294696 中產生氣泡,其在冷卻過程中會蒸發,因此改良相關技術 產生氣泡的缺點。 第10圖為依據本發明第四實例之LED封裝件的截面 圖及第11圖為說明第10圖之LED封裝件之操作的示意截 面圖。 參照第10圖,第四實例之LED封裝件400與第三實 例之LED封裝件300相同,但形成在凹陷空腔C内部與 LED晶片402周圍之密封構件420為具有預定半徑r之半 _ 球形,部份的空腔C則保持空的(vacant),且上部結構430 的底部結合於下部結構410的上邊緣。因此,對相對應的 元件給予自400起始之類似的元件符號並省略其敘述。 密封構件420可以各式各樣的形狀,包含半球形、圓 頂(dome)、橢圓、截頭體(frustum)如切去頭端(truncated) 之圓頂及以其中下部結構410之空腔C僅在LED晶片402 周圍有填充之結構予以形成。此處,半球形或半球種類包 含各種形狀。 * 密封榛件420為透明樹脂。對密封構件而言,可選擇 具有觸變性(thixotropy)且當被釋放時可保持恆定形狀之 材料。至於該種材料,可使用:TCR6101up(其為陶氏康寧 (Dow Corning)的產品名)。 再者,至於將樹脂精確地釋放至空腔C中之裝置,可 使用ML-808FX(其為Musashi的產品名)。此裝置可進行達 至大約〇.〇3cc之打點式(dotting)控制。 將參照第11圖說明本發明第四實例之LED封裝件400 19 93323 1294696 的操作。 芩照第11圖’光學路徑1&gt;係表示自LED晶片之隹點 F傳播至下部鏡子414之邊緣之連接f*pi之光,光學· 表示自LED晶片之焦點F傳播至在反射表面434與射 .出表面436間之連接點P2之光。在第四實例之咖封裝 件彻的情形下,光學路徑間之光全部經由射出^ 面436直接排放沒有通過反射表面々Μ。 然而,由於依據第四實例之密封構件420為半球形且 在密封構件420與上部結構43〇之底部438間之空腔C形 t空的空間,由焦點F所產生之光L1A Lx當來自密封構 件420時直線傳播,但當光自空腔c入射至上部結構之底 邛438時因空氣與樹脂間之折射率的差異而朝向反射表面 折射。此折射光由反射表面434反射再經由射出表面 436在橫向射出。結果,可能減少咖封料伽中射出 至杈向之光的視角。整體光路徑係以[表 學路徑^與“間之角度。 以⑴為先 第12圖為依據本發明第五實例之咖組裝件的立體 二弟二3圖為第12圖所示之咖組裝件的前視圖,及第 圖為乐12圖所示之LED組裝件的截面圖。 茶照第!2至14圖,此實例之LED組料湖係配置 在=^較佳為背光單元(未示出)内部之反射鏡板)上。各 (b露,部件包含讓晶片5〇2、安置在屏板 έ上之下部結構510、及上部結構530,且與鄰近 組衣件部件以預定間隔予以配置。將下部結構510設計成 93323 20 1294696 使LED晶片502位在其上同時將來自LED晶片5〇2之光 向上反射,且將上部結構53〇設計成將來自下部結構之光 實質放射狀地反射於橫向。 - 下部結構510具有收納LED晶片502之腔體 (body)512,且腔體512之中心部份向下凹陷形成空腔c。 空腔c具有作為支撐LED晶片5〇2之底座用之平坦底部, •且圍繞LED晶片502之空腔〇的壁形成將來自咖晶片 502之光向上反射之下部鏡子514。將透明密封構件52〇 #填充至空腔c中以自外部密封LED晶片5〇2。 下部鏡子514自TFD曰y t 日日片502向上且向外延伸以將來 自LED曰曰片502之光L向上反射,如帛15圖所示。下部 鏡子514係由複數個連接在—起的平面所界定,如圖所 不。或者’下部鏡子可由設計成將來自咖晶片5〇2之光 L向上反射至上部結構53()之單—或複數個曲面表面所界 定。 :::構體512可經由例如洗鱗、切割及成型予以形 =且係由金屬或聚合物與下部鏡子514—體製成。在這 fl月況下,下部結龍512及/或下部鏡子5U纟高反射率 合物所製成。該種高反射率聚合物的 一貫例令之上述者。 ^ 制成\ °卩結構體512可由低反射率金屬或聚合物戶;ί 衣、泰I部鏡子514則以高反射率材料之膜提供。 ^明密封構件520係由樹脂所製成,且較佳 LED晶片5〇2具有類似熱膨脹係數及反射率者。尤其 93323 21 -1294696 不僅具有優異的光學特性(由於大折射率)及優異的抗變黃 性(亦即由單-波長光所&amp;成之品質改變)而且甚至在硬化 後亦保持膠狀或彈性體狀態,因此可穩定地保護[ED晶片 502不會遭受到衝擊及振動。 上部結構530係為相對於軸A對稱之整體而言為三角 木形狀者。上部結構53〇包含漏斗狀主體532及用於支撐 上部結構530之連結於屏板54〇之三個插梢536。再者, 主體532在其下表面上具有上部鏡子534。上部鏡子 除了所示之漏斗形狀外亦可具有各式各樣的形狀如圓錐狀 及些微膨脹之圓錐狀。 將上部鏡子534配置成反射光L(其係由LED晶片5〇2 所產生且由下部鏡子514所向上反射者)於橫向。此外,上 部鏡子534反射光Li(其係自LED晶4 5〇2直接入射在上 部部份者)於橫向。 同時,將上部鏡子534配置成其包含頂點p之軸線A 可兵LED晶片502之焦'點F對準。此處,焦點F係指位在 作為發光源之LED晶片502之中心點。 一就此而言,上部結構530之主體532可利用澆鑄、切 割、及成型予以形成,且可使用金屬或聚合物與上部鏡子 534 —體製造。在該種情況下,上部結構53〇之主體μ〗 與上部鏡子534皆使用高反射率之金屬或高反射率之聚合 物予以形成。 ° 不像此構型,上部結構之主體532可由低反射率之金 屬或聚合物所製成,且上部鏡子534可以高反射率膜之形 93323 22 1294696 式予以製備。此膜可 率聚合物予以實現。再者二 =之金屬或上述之高反射 而言,現存含有T1二對具有優咖 構= _附於或嵌人密封構件别中以將上部結 反射至横向之光£ m :有不會對由上部鏡子534 0.4mm。 + L有-響之直徑’較佳的直徑為小於Face 4WA (the product name of the 0tsuka Chemical Company). Since the above material exhibits high reflectance at a high temperature of about 180 C, it is suitable as the main body 312 and/or the lower mirror of the lower structure. 314 materials. More specifically, the U4WA has an initial reflectance of 88 3% at the wavelength of the object (four) and a reflectance of 78.0 Å/〇 after two hours. NM〇4WA has an initial reflectance of 89.0% at 47 〇 wavelength and a reflectance of 89% after two hours. Unlike this configuration, the body 312 can be made of a low reflectivity metal or polymer and the lower mirror + 314 can be provided in the form of a high reflectivity film. The film can be realized using a high reflectivity metal or a high reflectivity polymer as described above. A sealing member 320 is made of a transparent resin. For the sealing member e, a resin having a thermal expansion coefficient and a refractive index similar to that of the LED wafer 302 can be selected. Qiao, Shi Xi not only has the optical characteristics of money (because it shows very little change due to single-wavelength filaments such as yellowing and has a large refractive index) and even maintains a gel or elastomer after the hardening process. The state thus securely protects the LED chip 302 from shock and vibration. The hardened sealing member 320 has a flat upper surface and a wafer receiving portion 324 formed around the lower blade and the LED wafer 302. • The upper structure 330 is a mtegraMype member obtained by molding a transparent resin, and is filled with a body 332 in its structure. The body 332 has on its upper portion a portion for reflecting light from the lower portion [I and 93323 17 1294696 - L2 to the radial reflective surface 334 and on its side for reflection by the reflective surface 334 The light L1 &amp; L2 is radiated to the external emission surface 336. The f-radiation surface 334 may have a shape that is linearly symmetrical with respect to the axis A passing through the inner tip (cusp)p and the focus F of the LED wafer. Therefore, the light L1 and L2 incident on the reflective surface 334 are reflected to the radial direction. In this regard, the upper structure 330 has a flat bottom 338 and thus is in close-to-surface contact with the upper surface of the sealing member 32〇 when bonded to the lower structure 310. ', Mountain' Therefore, if the upper structure 330 is formed using a material having the same refractive index as the sealing body 320, the light L1 and L2 from the focus of the LED wafer 3〇2 can propagate from the sealing member 32〇 to the upper structure 33〇. There is no refraction or reflection, as shown in Fig. 9. In the manufacturing process, the lower structure 310 is first fabricated, and the LED wafer 302 is placed on the base gw on the bottom of the lower structure 31, and then the transparent resin is poured. Thereby, the sealing member 32 is formed. Thereafter, the upper structure 33 is bonded to the sealing member 32, thereby completing the LED package 300. In this regard, the upper structure 33 can be separately formed in advance, and the sealing member 320 can be separately formed. The upper surface 322 and the bottom of the upper structure 33 are placed to contact each other, and pressure is applied to the aforementioned elements before the sealing member 320 is hardened so that the elements can be bonded to each other. By doing so, the transparent resin is The upper portion is lowered to the cavity c _ on which the lower structure 31 of the lED cymbal 302 is placed, so that the formation process of the sealing member becomes easy. Further, even if the sealing member is similar to the resin 93323 18 1294696 generates bubbles which evaporate during cooling, thus improving the disadvantages of the related art to generate bubbles. Fig. 10 is a cross-sectional view of the LED package according to the fourth example of the present invention and Fig. 11 is a diagram 10 A schematic cross-sectional view of the operation of the LED package. Referring to Fig. 10, the LED package 400 of the fourth example is identical to the LED package 300 of the third example, but is formed inside the recessed cavity C and sealed around the LED wafer 402. The member 420 is a semi-spherical shape having a predetermined radius r, a portion of the cavity C is vacant, and the bottom of the upper structure 430 is bonded to the upper edge of the lower structure 410. Therefore, the corresponding component is given The same reference numerals are used to omit the description of the components and the description thereof is omitted. The sealing member 420 can have various shapes including a hemisphere, a dome, an ellipse, a frustum such as a truncated end. The dome is formed by a structure in which the cavity C of the lower structure 410 is filled only around the LED wafer 402. Here, the hemispherical or hemispherical type includes various shapes. * The sealing member 420 is a transparent resin. For the sealing member, a material having thixotropy and maintaining a constant shape when released can be selected. As the material, TCR6101up (which is the product name of Dow Corning) can be used. Further, as for the device for accurately releasing the resin into the cavity C, ML-808FX (which is the product name of Musashi) can be used. This device can perform dotting control up to about cc3 cc. The operation of the LED package 400 19 93323 1294696 of the fourth example of the present invention will be explained with reference to FIG. Referring to Fig. 11, 'optical path 1&gt; is a light connecting f*pi from the defect point F of the LED chip to the edge of the lower mirror 414, and optical means that the focus F from the LED chip propagates to the reflective surface 434. The light from the connection point P2 between the surfaces 436 is emitted. In the case of the coffee package of the fourth example, the light between the optical paths is all directly discharged through the exit surface 436 without passing through the reflective surface. However, since the sealing member 420 according to the fourth example is hemispherical and the space between the sealing member 420 and the bottom portion 438 of the upper structure 43 is C-shaped, the light L1A Lx generated by the focus F is from the seal. The member 420 is linearly propagated, but is refracted toward the reflective surface due to the difference in refractive index between the air and the resin when the light is incident from the cavity c to the bottom 邛 438 of the upper structure. This refracted light is reflected by the reflective surface 434 and exits laterally via the exit surface 436. As a result, it is possible to reduce the angle of view of the light from the garnish to the slanting light. The overall optical path is [the angle between the path of the table and the "between". (1) is the first 12th picture, the stereoscopic two brothers and two figures of the coffee assembly according to the fifth example of the present invention are the coffee assembly shown in Fig. 12. The front view of the piece, and the figure is a cross-sectional view of the LED assembly shown in Figure 12. The photo of the LED group is shown in Figure 2 to Figure 14. The LED group of this example is configured in the backlight unit. Shown on the internal mirror plate. Each of the components includes a wafer 5, 2 disposed on the upper and lower structures 510 of the panel, and an upper structure 530, and is disposed at predetermined intervals from adjacent component parts. The lower structure 510 is designed as 93323 20 1294696 to position the LED chip 502 thereon while reflecting the light from the LED chip 5 向上 2 upward, and the upper structure 53 〇 is designed to substantially radially illuminate the light from the lower structure Reflected in the lateral direction - The lower structure 510 has a body 512 accommodating the LED chip 502, and the central portion of the cavity 512 is recessed downward to form a cavity c. The cavity c has a base as a support LED chip 5〇2 Using a flat bottom, and forming a wall around the cavity of the LED chip 502 The light from the coffee wafer 502 is reflected upwardly to the lower mirror 514. The transparent sealing member 52〇# is filled into the cavity c to seal the LED wafer 5〇2 from the outside. The lower mirror 514 is upward from the TFD曰yt day sheet 502 and Extending outwardly to reflect light L from LED slab 502 upward, as shown in Figure 15. Lower mirror 514 is defined by a plurality of connected planes, as shown in the figure. It is designed to reflect the light L from the coffee wafer 5〇2 upwardly to the single- or multiple curved surfaces of the upper structure 53(). ::: The structure 512 can be shaped, for example, by washing scales, cutting and forming = and It is made of a metal or a polymer and a lower mirror 514. Under this condition, the lower knot 512 and/or the lower mirror 5U 纟 high reflectivity are made. The high reflectivity polymer It has been consistently stated above. ^ The finished structure 512 can be made of a low reflectivity metal or polymer; the yi, the Thai I mirror 514 is provided by a film of high reflectivity material. Made of resin, and preferably LED wafer 5〇2 has a similar thermal expansion system And reflectivity. Especially 93323 21 -1294696 not only has excellent optical properties (due to large refractive index) and excellent resistance to yellowing (that is, the quality changes from single-wavelength light), and even after hardening It also maintains a gel-like or elastomeric state, so it can be stably protected [ED wafer 502 is not subjected to shock and vibration. The upper structure 530 is a triangular wood shape that is symmetrical with respect to the axis A as a whole. The upper structure 53〇 The funnel-shaped main body 532 and the three insertion ends 536 for supporting the upper structure 530 and coupled to the panel 54A are included. Further, the body 532 has an upper mirror 534 on its lower surface. The upper mirror can have a variety of shapes such as a conical shape and a slightly expanded conical shape in addition to the funnel shape shown. The upper mirror 534 is configured to reflect light L (which is generated by the LED wafer 5〇2 and reflected upward by the lower mirror 514) in the lateral direction. Further, the upper mirror 534 reflects light Li (which is incident directly from the upper portion of the LED crystal 4 5 〇 2) in the lateral direction. At the same time, the upper mirror 534 is configured such that it contains the focal point 'A' of the axis A of the apex p. Here, the focus F is located at the center of the LED chip 502 as a light source. In this regard, the body 532 of the upper structure 530 can be formed by casting, cutting, and forming, and can be fabricated integrally with the upper mirror 534 using a metal or polymer. In this case, the main body μ of the upper structure 53 and the upper mirror 534 are formed using a high reflectivity metal or a high reflectivity polymer. ° Unlike this configuration, the body 532 of the upper structure may be made of a metal or polymer of low reflectivity, and the upper mirror 534 may be prepared by a high reflectivity film shape 93323 22 1294696. This membrane yield polymer is achieved. In addition to the metal of the second or the above-mentioned high reflection, the existing two pairs of T1 have an excellent structure = _ attached to or embedded in the sealing member to reflect the upper junction to the lateral light £ m : there is no By the upper mirror 534 0.4mm. + L has - diameter of the ring - the preferred diameter is less than

現在依序參照第16至 上部結構530的插梢536。 19圖以說明固定於屏板540之 ^先’如第16圖所示,屏板54〇備有直徑相當於插梢 之溝乜(或孔洞),其接著固定地嵌入 溝槽直徑可精細地小於插梢536 I v At 田…、 i%荷稍536者以能夠干涉配合 (interference fit)。 山第17圖係顯示使用黏著劑之實例。料,當插梢536 甘八入真充有黏著劑542之屏板540之溝槽中時,插梢536 可更堅固地固定於屏板54〇。當然,溝槽直徑可些微地大 於插梢536者。 第18圖係顯示使用支持物544以將插梢530固定於屏 板540之貫例,其中支持物544係嵌入屏板54〇之溝槽中。 當然,屏板540可備有其中安裝有支持物544之孔洞。 第19圖係顯示藉由焊接546將插梢536固定於屏板 540之實例。 如上所述’插梢536可依據多種方法固定於屏板540。 第20圖為第12圖所示之LED組裝件之另一選擇例的 23 93323 1294696 立體圖。 m LED組裝件500A包含配置在數個下部結構51〇上之 早一上部結構遍。當下部結構510酉己置成彼此鄰近時可 採用此結構。 第21圖為依據本發明第六實例之㈣組裝件的前視 圖’及第22圖為圖解地說明第W之咖組裝件之 知作的截面圖。此實例之LED組裝件6⑼包含如第Μ至 ^圖所示之複數㈣料部件,其似預定間隔配置在較 仏為背光單元(未示出)内部之反射鏡之屏板64〇上。各LED 組裳件_部件包含LED晶片6〇2、安置在屏板刚上之 下縣構61G、及上部結構63〇。將下部結構㈣設計成使 咖晶片602位在其上且同時將來自led晶片6〇2之光向 ft射’且將±部結構63()設計成將自下部結構之光放射 狀地反射於橫向。 下部結構610包含密封LED晶片6〇2之密封部件η? 鲁及作為基底支撐LED晶片602之底座618。密封部件612 係由透明樹脂如環氧及聚石夕氧烧所製成,且密封部件 具有自底座618向上延伸之上半球形放射表面614。底座 618具有供給電力給led晶片602之端點及將所產生之埶 散逸至外部之熱傳導部件(或散熱件(heatslug))。底座㈣ 可由高反射率金屬或聚合物所製成以形成將來自LED晶 =602之光向上反射之反射板或鏡子表面。或者,該種材 料可塗佈或印刷在底座618上以形成鏡子表面。 上部結構630及屏板640與第五實例之上部結構53〇 93323 24 ' 1294696 ’ 及屏板54〇實質上相同,因此省略其說明。 參照第22圖,由LED晶片602之焦點F所產生之光Referring now to the 536 of the upper structure 530 of the upper structure 530. Figure 19 is a view showing the fixing of the panel 540. As shown in Fig. 16, the panel 54 is provided with a groove (or a hole) having a diameter corresponding to the tip, which is then fixedly embedded in the groove diameter to be finely Less than the tip 536 I v At field, i% load slightly 536 to be able to interfere with the interference fit. Figure 17 of the mountain shows an example of the use of an adhesive. The spigot 536 can be more firmly fixed to the panel 54 当 when the spigot 536 is inserted into the groove of the panel 540 of the adhesive 542. Of course, the groove diameter may be slightly larger than the tip 536. Fig. 18 shows a conventional example in which the holder 544 is used to fix the ferrule 530 to the panel 540, wherein the holder 544 is embedded in the groove of the panel 54. Of course, the panel 540 can be provided with a hole in which the support 544 is mounted. Fig. 19 shows an example in which the spigot 536 is fixed to the panel 540 by welding 546. The spigot 536 can be secured to the panel 540 in a variety of ways as described above. Fig. 20 is a perspective view showing another alternative example of the LED assembly shown in Fig. 12, 23 93323 1294696. The m LED assembly 500A includes an early upper structure pass disposed on a plurality of lower structures 51A. This structure can be employed when the lower structures 510 are placed adjacent to each other. Fig. 21 is a cross-sectional view showing the prior art of the fourth assembly of the fourth embodiment of the present invention, and Fig. 22 is a schematic view for explaining the structure of the coffee assembly of the fourth embodiment. The LED assembly 6 (9) of this example comprises a plurality of (four) material members as shown in Figs. 2 to 4, which are arranged at predetermined intervals on a panel 64 of a mirror which is a backlight unit (not shown). Each of the LED sets has a LED chip 6〇2, a lower county structure 61G disposed on the panel, and an upper structure 63〇. The lower structure (4) is designed such that the coffee wafer 602 is positioned thereon while simultaneously emitting light from the LED wafer 6〇2 to the ft' and the ±section structure 63() is designed to radially reflect the light from the lower structure. Horizontal. The lower structure 610 includes a sealing member η that seals the LED wafer 6〇2 and a base 618 that supports the LED wafer 602 as a substrate. The sealing member 612 is made of a transparent resin such as epoxy and polyoxo, and the sealing member has an upper hemispherical radiation surface 614 extending upward from the base 618. The base 618 has heat conducting components (or heatslugs) that supply power to the ends of the led wafer 602 and dissipate the resulting turns to the outside. The base (4) may be made of a high reflectivity metal or polymer to form a reflective or mirror surface that reflects light from the LED crystals = 602 upward. Alternatively, the material can be coated or printed on the base 618 to form a mirror surface. The upper structure 630 and the screen 640 are substantially the same as the upper structure 53 〇 93323 24 ' 1294696 ' and the screen 54 第五 of the fifth example, and therefore the description thereof will be omitted. Referring to Fig. 22, the light generated by the focus F of the LED chip 602

Ll經由放射表面614出去至外部,由於密封部件612與空 氣間之折射率差異及放射表面614之曲率而折射於橫向。 .自放射表面614向上放射之光L2亦由上部結構63〇之鏡子 表面634而反射於橫向。此使得自LED晶片602所產生之 光Li、。沿著與其上安置著LED晶片6〇2之平面平行之 方向出去。 ^ #自放射表面614向上放射之光、係顯示為不在放射 表面折射,依據放射表面614的曲率等其可向著軸a或折 射至橫向。除了半球構型之外,密封部件612亦可具有各 種形狀如圓頂、切去頭端之上半球或圓頂、具有凹面上表 面之上半球或圓頂等。 該種另一選擇將參照第23及24圖說明,其中第23 圖為依據本發明第六實例之LED纽裝件之另—選擇性前 鲁視圖,及第24圖為圖解地說明第24圖所示之乙£1)組裝件 之才呆作的截面圖。 第23及24圖所示之LED組裝件6〇〇_2 組裳件_實質上㈣,但密封部件612具有自底座612 M上半球形之形式向上延伸之第一放射表面614及自第一 :射表面6U之頂端成凹面之第二放射表面616。所以, 彳用相同的兀件符號表示類似元件且沒有說明類似元件。 τ參照第24圖,由LED晶片602之焦點F所產生之光 丨及:2經由第—及第二放射表面614及616射出至外部。 93323 25 1294696 :之密曲T612與空氣間之折射率差異及第-放射表面 々門;使光Ll折射於橫向。由於密封部件612鱼空 ^之^率差異及第:放射表面616之曲率而L、 ==折射,然後由上部結構㈣之反射表面㈣而 向。此結果使得由咖晶片所產生之光^及I: 在貫質上垂直於中心轴A夕古a . 直於中。軸A之方向,亦即,在實質上平行於 &quot;女置著LED晶片602之平面的方向放射。L1 goes out to the outside via the radiation surface 614, and is refracted in the lateral direction due to the difference in refractive index between the sealing member 612 and the air and the curvature of the radiation surface 614. The light L2 radiated upward from the radiation surface 614 is also reflected by the mirror surface 634 of the upper structure 63 in the lateral direction. This causes the light Li, which is generated from the LED chip 602. It goes out in a direction parallel to the plane on which the LED chips 6〇2 are placed. ^ The light radiated upward from the radiation surface 614 is shown not to be refracted on the radiation surface, and may be directed toward the axis a or to the lateral direction depending on the curvature of the radiation surface 614 or the like. In addition to the hemispherical configuration, the sealing member 612 can have various shapes such as a dome, a hemisphere or dome above the cut end, a hemisphere or dome having a concave surface, and the like. Another alternative of this will be described with reference to Figures 23 and 24, wherein FIG. 23 is a further selective front view of the LED button according to the sixth example of the present invention, and FIG. 24 is a diagram for explaining the figure 24 A cross-sectional view of the assembly shown in Fig. 1). The LED assembly 6 〇〇 2 shown in Figures 23 and 24 is substantially (four), but the sealing member 612 has a first radiating surface 614 extending upward from the upper hemisphere of the base 612 M and from the first The second radiation surface 616 having a concave surface at the top end of the projection surface 6U. Therefore, the same elements are used to denote like elements and the like elements are not described. Referring to Fig. 24, the pupils: 2 generated by the focus F of the LED chip 602 are emitted to the outside via the first and second radiation surfaces 614 and 616. 93323 25 1294696: The difference in refractive index between the T612 and the air and the surface of the first radiating surface; the light L1 is refracted in the lateral direction. Due to the difference in the air velocity of the sealing member 612 and the curvature of the first: radiating surface 616, L, == refraction, and then the reflecting surface (four) of the upper structure (4). This result makes the light and I generated by the coffee wafer: perpendicular to the central axis A. The direction of the axis A, that is, is radiated in a direction substantially parallel to the plane in which the female is placed on the LED chip 602.

第25圖為依據本發明第七實例之LED組裝件的立體 圖,第26圖為第25圖所示之;lED組裝件的前視圖,及第 27圖為圖解地說明第25圖所示之LED組裝件之操作的截 面圖。 若密封部件612的形狀為切去頭端之上半球或圓頂, 則先路徑為介於那些在第22及24圖所示者。然而,光路 徑可依據密封部件612之整體構型及折射率而改變。 參照第25至27圖,LED組裝件700較佳配置在背光 鲁單元(未示出)内部。LED組裝件700包含LED晶片702、 岔封LED晶片702之下部結構710、使下部結構71 〇座落 其上之屏板740、以預定的距離與下部結構71〇隔開且配 置在屏板740上之透明板750及貼附於透明板750底部之 上部結構73 0。將各下部結構712配置成將來自LED晶片 702之光向上放射,且將各上部結構73〇配置成將由下部 結構710向上放射之光放射狀地反射於橫向。 下部結構710與那些第五實例之下部結構510者具有 實質上相同之構型及功能。所以,使用類似的元件符號表 26 93323 1294696 示類似元件沒有其說明。 上部結構730為配置成以預定的距離與下部結構710 隔開之相對中心軸對稱之漏斗形體。上部結構73q以並頂 部表面貼附於透明板75G之底部。除了如所示之漏斗狀構 型之外’上部板730可具有各種構型如圓錐 之圓錐形等。 々狀 上部結構730係由金屬或高反射率模具所製成,且可 較佳地貼附於透明板750之底部。或者,可首先製備透明 板750 ’然後藉由注射成型在透明板75()的底部 部結構730。 將上部鏡子734配置成再度反射由LED晶片702所產 生且由下部鏡子714所向上反射之光於橫向。上部鏡子734 亦反射直接自LED晶片702入射在上部鏡子734上之光於 橫向丄下部及上部鏡子714及734與那些如上述之第五實 例者實質上相同,因此不再度說明。 貝 在此實例中,屏板740較佳為背光單元之反射鏡板, 士透,板750較佳為透明板或背光單元之導光板。此意味 著此實例之LED組裝件700係以背光單元内部之單一單元 予以實現。 此實例之下部結構71〇亦可配置成與第六實例及其另 一選擇例之下部結構610和610-1相同。 雖然上部結構NO與下部結構710係以相同數目說 明’但亦可能提供將光橫向地反射之單一上部結構,其光 係由複數個下部結構71〇所向上反射者,如第2〇圖之第五 93323 27 1294696 實例所說明。 依據本發明,用於將來自LED晶片之光向上反射之下 部結構與㈣將此纽射域肖之上部結構係分別提供再 與彼此結合,由㈣良密封構件的成型效率且可以容易的 方式製造側向發射型led封裝件。 傲熟悉此項技術人士可清楚明瞭本發明可作成各種修飾 及欠化。因此,本發明意欲涵蓋在隨附 圍内及其均等物之本發明之修飾及變化。 【圖式簡單說明】 案之一 一起用 立提供本發明之進一步瞭解且併入及構成本申請 如之縫附的圖式’係圖解本發明之實例且與說明 於解釋本發明的原理。在圖式中: f 1圖為相關技術之:LED透鏡的截面圖; 第2圖為㈣本㈣第—實狀LED難件的分解立 #圖;第3圖為說明第2圖之咖封裝件之結合狀態的立體 J :圖為沿著第3圖之線IV_IV取得的截面圖; 的截面/圖為採用次底座之對應於第4圖之咖封震件 圖; 體圖 弟5圖為說明第2圖之LED封裝件之操作的示意截面 弟6圖為依據本發明第二實例之⑽封裝件的分解立 93323 28 J294696 - # 7 ®為依據本發明帛三㈣之led料件的截面 圖; 第8圖為說明第7圖之LED封裝件之結合狀態的立體 圖; ^ 第9圖為說明第7圖之LED封裝件之操作的示意截面 ’圖; &quot; • 第10圖為依據本發明第四實例之LED封震件的截面 圖; Φ 第11圖為說明第10圖之LED封裝件之操作的示意截 面圖; 第12圖為依據本發明第五實例之LED組裝件的立體 圖; 第13圖為第12圖所示之LED組裝件的前視圖; 第14圖為第12圖所示之LED組裝件中之一個的截面 圈; 第15圖為圖解地說明第12圖所示之LED組裝件之操 籲作的截面圖; 第16至19圖為顯示以各種形狀彼此嚅合之LED組裝 件之插梢及屏板的截面圖; 第20圖為依據本發明第五實例之LED組裝件之另— 選擇例的立體圖; 第21圖為依據本發明第六實例之LED組裝件的前視 圖、; 第22圖為圖解地說明第21圖所示之LED組裝件之操 29 93323 1294696 - 作的截面圖; 、第圖為依據本發明第六實例之LED組裝件 選擇例的前視圖; 第24圖為圖解地說明第24圖所示之LED組裝 作的截面圖; ^ 第25圖為依據本發明第七實例之led組裝件的立體 圖; 第26圖為第25圖所示之LED組裝件的前視圖;以及 • 第27圖為圖解地說明第25圖所示之LED組裝件之操 作的截面圖。 卞 【主 要元件符號說明】 10 LED透鏡 43 光軸 100 LED封裝件 102 LED晶片 110 下部結構 112 主體 114 下部鏡子 116 底座 120 雄、封構件 130 上部結構 132 漏斗狀主體 134 上部鏡子 136 插梢 156 折射表面 300 LED封裝件 302 LED晶片 310 下部結構 312 主體 314 下部鏡子 316 底座 320 密封構件 322 上表面 324 晶片接收部份 330 上部結構 332 主體 334 反射表面 93323 30 ^ 1294696 - 336 射出表面 338 平坦底部 400 LED封裝件 402 LED晶片 410 下部結構 412 主體 _ 414 下部鏡子 416 底座 420 密封構件 430 上部結構 '432 主體 434 反射表面 ~ 436 射出表面 500 LED組裝件 502 LED晶片 510 下部結構 φ 512 下部結構體 514 下部鏡子 530 上部結構 532 主體 534 上部鏡子 536 插梢 540 屏板 542 黏著劑 544 支持物 546 焊接 500A LED組裝件 510A 下部結構 530A 上部結構 600 LED組裝件 602 LED晶片 610 下部結構 612 密封部件 614、 616 放射表面 618 底座 630 上部結構 632 主體 634 上部鏡子 636 插梢 640 屏板 600-1 LED組裝件 610-1 下部結構 700 LED組裝件 702 LED晶片 710 下部結構 712 下部結構體 714 下部鏡子 730 上部結構 31 93323 -1294696 734 上部鏡子 740 屏板 750 透明板 A 轴線 C 空腔 F 焦點 Η 折射表面 I 反射表面 I!、 12光學路徑 L 連接部分 Lx 光線 L1、 L2 光線 P 内部尖端 P 頂點 PI、 P2 點 Γ 半徑 a 角度 32 93323Figure 25 is a perspective view of an LED assembly according to a seventh example of the present invention, Figure 26 is a front view of the lED assembly shown in Figure 25, and Figure 27 is an illustration of the LED shown in Figure 25 A cross-sectional view of the operation of the assembly. If the shape of the sealing member 612 is to cut off the hemisphere or dome above the head end, then the first path is between those shown in Figures 22 and 24. However, the optical path may vary depending on the overall configuration and refractive index of the sealing member 612. Referring to Figures 25 through 27, LED assembly 700 is preferably disposed within a backlight unit (not shown). The LED assembly 700 includes an LED chip 702, a lower structure 710 of the LED chip 702, a screen 740 on which the lower structure 71 is seated, a predetermined distance from the lower structure 71, and is disposed on the panel 740. The upper transparent plate 750 and the upper structure 73 0 attached to the bottom of the transparent plate 750. Each of the lower structures 712 is arranged to radiate light from the LED wafer 702 upward, and each of the upper structures 73 is arranged to radially reflect the light radiated upward by the lower structure 710 in the lateral direction. The lower structure 710 has substantially the same configuration and function as those of the fifth embodiment lower structure 510. Therefore, the use of similar component symbol tables 26 93323 1294696 shows similar components without a description. The upper structure 730 is a funnel-shaped body that is configured to be symmetric with respect to a central axis spaced apart from the lower structure 710 by a predetermined distance. The upper structure 73q is attached to the bottom of the transparent plate 75G with the top surface. The upper plate 730 may have various configurations such as a conical conical shape or the like in addition to the funnel-shaped configuration as shown. The braided upper structure 730 is made of a metal or high reflectivity mold and is preferably attached to the bottom of the transparent sheet 750. Alternatively, the transparent plate 750' may be first prepared and then molded into the bottom structure 730 of the transparent plate 75(). The upper mirror 734 is configured to again reflect the light generated by the LED wafer 702 and reflected upward by the lower mirror 714 in the lateral direction. The upper mirror 734 also reflects light directly incident on the upper mirror 734 from the LED wafer 702. The lateral lower and upper mirrors 714 and 734 are substantially identical to those of the fifth embodiment described above, and therefore will not be described again. In this example, the panel 740 is preferably a mirror panel of the backlight unit, and the panel 750 is preferably a transparent panel or a light guide panel of the backlight unit. This means that the LED assembly 700 of this example is implemented as a single unit inside the backlight unit. The lower portion structure 71 of this example may also be configured to be identical to the sixth structure and its other alternative lower structures 610 and 610-1. Although the upper structure NO and the lower structure 710 are described by the same number, it is also possible to provide a single upper structure that reflects light laterally, and the light system is reflected upward by a plurality of lower structures 71, as in the second figure. Five 93323 27 1294696 examples are illustrated. According to the present invention, the structure for upwardly reflecting the light from the LED chip and (4) respectively providing the structure of the upper portion of the electron beam are combined with each other, and the molding efficiency of the (4) good sealing member can be easily manufactured. Lateral emission type LED package. It will be apparent to those skilled in the art that the present invention can be modified and reduced. Thus, it is intended that the present invention cover the modifications and BRIEF DESCRIPTION OF THE DRAWINGS [0009] The accompanying drawings, which are set forth in the claims In the drawing: f 1 is the related art: a cross-sectional view of the LED lens; the second picture is (4) the decomposition of the (4) first-solid LED difficult parts; the third figure is the coffee package of the second figure The solid state of the joint state of the piece is shown in the cross-sectional view taken along line IV_IV of Fig. 3; the cross section/figure is the view of the coffee seal that corresponds to the fourth figure using the sub-base; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 6 is a schematic cross-sectional view showing the operation of the LED package of FIG. 2, showing the exploded view of the package of the (10) package according to the second example of the present invention. 93323 28 J294696 - # 7 ® is a cross section of the led material of the third (four) according to the present invention. Figure 8 is a perspective view showing the combined state of the LED package of Figure 7; ^ Figure 9 is a schematic cross-sectional view showing the operation of the LED package of Figure 7; &quot; • Figure 10 is based on this BRIEF DESCRIPTION OF THE DRAWINGS FIG. 11 is a schematic cross-sectional view showing the operation of the LED package of FIG. 10; FIG. 12 is a perspective view of the LED assembly according to the fifth example of the present invention; Figure 13 is a front view of the LED assembly shown in Figure 12; Figure 14 is an LED assembly shown in Figure 12. FIG. 15 is a cross-sectional view schematically illustrating the operation of the LED assembly shown in FIG. 12; FIGS. 16 to 19 are diagrams showing the insertion of LED assemblies that are coupled to each other in various shapes. FIG. 20 is a perspective view showing another alternative example of the LED assembly according to the fifth example of the present invention; FIG. 21 is a front view of the LED assembly according to the sixth example of the present invention; Figure 22 is a cross-sectional view schematically showing the operation of the LED assembly shown in Figure 21; Figure 29 is a front view of the LED assembly selection example according to the sixth example of the present invention; FIG. 25 is a perspective view showing the assembly of the LED shown in FIG. 24; FIG. 25 is a perspective view of the LED assembly according to the seventh example of the present invention; and FIG. 26 is a front view of the LED assembly shown in FIG. And Fig. 27 is a cross-sectional view schematically illustrating the operation of the LED assembly shown in Fig. 25.卞【Main component symbol description】 10 LED lens 43 Optical axis 100 LED package 102 LED wafer 110 Lower structure 112 Main body 114 Lower mirror 116 Base 120 Male, sealing member 130 Upper structure 132 Funnel-shaped body 134 Upper mirror 136 Insert 156 Refraction Surface 300 LED Package 302 LED Wafer 310 Substructure 312 Body 314 Lower Mirror 316 Base 320 Sealing Member 322 Upper Surface 324 Wafer Receiving Port 330 Upper Structure 332 Body 334 Reflecting Surface 93323 30 ^ 1294696 - 336 Emitting Surface 338 Flat Bottom 400 LED Package 402 LED Wafer 410 Lower Structure 412 Body _ 414 Lower Mirror 416 Base 420 Sealing Member 430 Upper Structure '432 Body 434 Reflecting Surface ~ 436 Emitting Surface 500 LED Assembly 502 LED Wafer 510 Lower Structure φ 512 Lower Structure 514 Lower Mirror 530 Upper structure 532 Main body 534 Upper mirror 536 Insert 540 Screen 542 Adhesive 544 Support 546 Soldering 500A LED assembly 510A Lower structure 530A Superstructure 600 LED assembly 602 LED wafer 610 Lower structure 612 Components 614, 616 Radiation Surface 618 Base 630 Upper Structure 632 Body 634 Upper Mirror 636 Insert 640 Screen 600-1 LED Assembly 610-1 Lower Structure 700 LED Assembly 702 LED Wafer 710 Lower Structure 712 Lower Structure 714 Lower Mirror 730 Upper structure 31 93323 -1294696 734 Upper mirror 740 Screen 750 Transparent plate A Axis C Cavity F Focus Η Refractive surface I Reflecting surface I!, 12 Optical path L Connecting part Lx Ray L1, L2 Ray P Internal tip P apex PI, P2 point 半径 radius a angle 32 93323

Claims (1)

1294696 十、申請專利範圍·· k 一種發光二極體(LED)封裝件,包括·· LED晶片; 下部結構,具有自該LED晶片向上且向外延伸之 J=,用於將來自該LED晶片之光向上反射同時 ED^ ’及具有形成在該下部鏡子t及該LED 曰日片周圍之透明密封構件;以及 結^該下部結構之上部部份之上部結構,用於將 由及下部結構所向上反射 _ lateral direction) 〇 射至徑橫向⑽ial I如圍第1項之封褒件,其中該上部結構包括: 反射ΪΓ 具有相對於轴線傾斜之反射表面,用於 、^下部結構所反射之光於橫向;以及 、 結合於該下部結構之上部部, 該反射部件。 又枒仟用於支撐 3, 如申請專利範圍第2項之封n 4 構件之上部部份之複數:插:广括結 4. 如申请專利範圍第2項之封 數個插梢’且該下部結構具有形成在牛包括複 接收該等插梢之支持物。 Π '、之用於 5·如申請專利範圍第2項之封裳 高反射率之全屬戋# Α 上部結構係由 午(以或射出成形模具所製成。 如申請專利範圍第1項之封裝件,1由兮 透明構件,具有用於將來自 ςϋ㈣構包括 丨知之先反射於橫向且 93323 33 ^94696 — _於軸線傾斜之反射表面、及具有用於將由該反射表 面所反射之光射出至該透明構件外部之射出表面。 7. 如申請專利範圍第6項之封料,其中該透明密封構件 -係形成為具有平坦上表面且填滿該下部鏡子内部,且該 _ - 上部結構的底部係結合於該透明密封構件之平坦上表 面0 8. 如申請專職目第6項之㈣件,其中該透㈣封構件 具有上半球形狀’使得在該透明密封構件周圍之該下部 鏡子與該上部結構之底部間留下空的空間。 9. 如申請專利範㈣8項之封裝件,其中該半球形透明密 封構件具有觸變性。 ^ 10=申請專利範圍第!項之封裝件,其中該下部鏡子係由 高反射率之金屬或聚合物所製成。 ιι·種發光二極體(led)組裝件,包括: LED晶片; • 岔封該LED晶片且配置成將來自該LED晶片之光 向上放射之下部結構; 用於安置該下部結構之基板;以及 支撐在該基板上之上部結構,以放射狀地反射由該 下部結構向上放射之光於橫向。 12.如申請專利範圍第n項之㈣組裝件,其中該上部結 構包括: 反射部件,具有相對於軸線傾斜之反射表面,用於 反射由該下部結構所反射之光於橫向;以及 93323 34 * 1294696 之上部部份之支撐件,用於支撐 結合於該下部結構 該反射部件。 13·如申請專利範圍第 包括結合於該透明 14·如申請專利範圍第 係猎由干涉配合、 板0 ^2項之LED組裝件,其中該支撐件 畨封構件之上部部份之複數個插梢。 13項之LED組裝件,其中該等插梢 接合及焊接之至少一者固定於該基1294696 X. Patent application scope·· k A light-emitting diode (LED) package, including LED wafers; a lower structure having J= extending upward and outward from the LED wafer for receiving the LED chip from the LED chip The light is reflected upwardly while the ED ^ 'and has a transparent sealing member formed around the lower mirror t and the LED 曰 ;; and the upper portion of the upper portion of the lower structure is used for the upper and lower structures Lateral _ lateral lateral lateral lateral 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如In the lateral direction; and, coupled to the upper portion of the lower structure, the reflective member. Further, it is used for the support 3, such as the plural of the upper part of the n 4 member of the second part of the patent application scope: plug: wide bracket 4. as the number of the inserts of the second item of the patent application scope' The lower structure has a support formed in the cow comprising a plurality of receiving the plugs. Π ', it is used for 5. · For example, the high reflectivity of the cover of the second paragraph of the patent application scope is 戋# Α The upper structure is made by noon (or by injection molding die.) The package, 1 is made of a transparent member, has a reflective surface for reflecting from the ςϋ (4) structure, including the first reflection in the lateral direction, and 93336 33 ^94696 - the axis is inclined, and has a light for reflecting the reflected surface The injection surface to the outside of the transparent member. 7. The sealing material of claim 6, wherein the transparent sealing member is formed to have a flat upper surface and fill the inside of the lower mirror, and the _-superstructure The bottom portion is bonded to the flat upper surface of the transparent sealing member. 8. The member of claim 4, wherein the through-four (four) sealing member has an upper hemispherical shape such that the lower mirror around the transparent sealing member An empty space is left between the bottoms of the upper structure. 9. As for the package of the patent application (4), the hemispherical transparent sealing member has thixotropic properties. ^ 10=Application for a patent The package of item: wherein the lower mirror is made of a high reflectivity metal or polymer. ιι LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED LED A structure configured to radiate light from the LED wafer upwardly; a substrate for positioning the lower structure; and an upper structure supported on the substrate to radially reflect light emitted upward from the lower structure in a lateral direction. 12. The assembly of claim 4, wherein the upper structure comprises: a reflective member having a reflective surface inclined with respect to the axis for reflecting light reflected by the lower structure in a lateral direction; and 93323 34 * The upper part of the support member of 1294696 is used for supporting the reflective member coupled to the lower structure. 13· As claimed in the patent scope, the invention is incorporated in the transparent 14 · as claimed in the patent range, the hunting is performed by interference fit, board 0 ^ 2 The LED assembly of the item, wherein the support member has a plurality of plugs on the upper portion of the sealing member. 13 LED assembly parts, wherein the plugs are joined and welded At least one fixed to the base 15·如申請專利範圍第 目相當於該等插梢 支持物。 13項之LED組裝件,進一步包括數 且固定於該基板以接收該等插梢之 16.=請專利範圍第u項之led組裝件,其中該上 構係以預定的距離與該下部結構隔開。 17‘1 申lf專利範圍第11項之LED組裝件,其中該上部與 構係由金屬或高及射率模具所製成。 18 ::請專利範圍第u項之led組裝件,其中該下部詞15. The scope of the patent application is equivalent to the plug support. The LED assembly of the 13th item further includes a plurality of LED assemblies that are fixed to the substrate to receive the spigots. The invention relates to the LED assembly of the invention, wherein the upper structure is separated from the lower structure by a predetermined distance. open. 17 '1 LED assembly of claim 11 of the scope of the patent, wherein the upper portion and the structure are made of metal or high and medium rate molds. 18 :: Please refer to the led assembly of the scope of the patent, in which the lower part 不再括: 支撐該LED晶片 晶片及周圍向上延伸 射;以及 之下部鏡子,該下部鏡子自該LED 以將來自該LED晶片之光向上反 形成在該下部鏡子内部及該LED晶片的 明密封部件。 ^ 19.如申請專利範圍第u項之咖組震件,其中該下部結 構包括: 支樓該LED晶片之底座;以及 93323 35 Ϊ294696 °又置在該底座上以密封該LED晶月之透明密封部 件。 20·如申,專利範圍第u項之咖組裝件,其中該基板為 其中安裝有該LED組裝件之背光單元的反射板。 21· —種發光二極體(LED)組裝件,包括·· led晶片; 逸封该LED晶片且配置成將來自該LED晶片之光 向上放射之下部結構; 用於安置該下部結構之基板; 以預定的距離與該下部結構隔開且配置在該基板 上之透明板;以及 配置在該透明板之下側上之上部結構,以放射狀地 反射由該下部結構向上放射之光於橫向。 22. 如申請專利範圍第21項之LED組裝件,其中該上部結 構具有相對於中心軸傾斜以反射由該下部結構所反射 之光於橫向之反射表面,及貼附於該透明板下侧之 表面。 、 23. 如申請專利範圍第22項之LED組裝件,其中該上部結 構係黏附於該透明板之下侧。 M·如申請專利範圍第22項之led組裝件,其中該上部結 構係在該透明板之下侧上射出成型。 25. 如申請專利範圍第22項之LED組裝件,其中該上部結 構係由高反射率模具或金屬所製成。 26. 如申請專利範圍第21項之led組裝件,其中該上部結 93323 36 1294696 構係以預定的距離與該下部結構隔開。 27·如申請專利範圍第21項之LED組裝件結 構包括: 曰支撐該led晶片之下部鏡子,該下部鏡子自該lED ·' 晶片及周圍向上延伸以將來自該LED晶片之光向上反 射;以及 形成在該下部鏡子内部及該LED晶片的周圍之透 明密封部件。 籲28.如申請專利範圍第21項之LED組裝件,其中該下部結 構包括: 支撐該LED晶片之底座;以及 設置在該底座上以密封該LED晶片之透明密封部 件。 29.如申請專利範圍帛21項之LED組震件’其中該基板為 其中安裝有該LED組裝件之背光單元的反射板。No longer: supporting the LED wafer wafer and surrounding upwardly extending; and a lower mirror from the LED to reflect light from the LED wafer upwardly inside the lower mirror and the LED sealing member . ^ 19. The coffee shaker of claim U, wherein the lower structure comprises: a base of the LED chip of the branch; and 93323 35 Ϊ 294696 ° is further disposed on the base to seal the transparent seal of the LED crystal moon component. 20. The coffee assembly of claim U, wherein the substrate is a reflector of a backlight unit in which the LED assembly is mounted. 21) a light emitting diode (LED) assembly, comprising: a led wafer; escaping the LED wafer and configured to radiate light from the LED wafer upwardly to the lower structure; for placing the substrate of the lower structure; a transparent plate spaced apart from the lower structure by a predetermined distance and disposed on the substrate; and an upper structure disposed on a lower side of the transparent plate to radially reflect light radiated upward from the lower structure in a lateral direction. 22. The LED assembly of claim 21, wherein the upper structure has a reflective surface that is inclined relative to the central axis to reflect light reflected by the lower structure and is attached to the underside of the transparent plate. surface. 23. The LED assembly of claim 22, wherein the upper structure is adhered to a lower side of the transparent plate. M. The LED assembly of claim 22, wherein the upper structure is injection molded on a lower side of the transparent plate. 25. The LED assembly of claim 22, wherein the upper structure is made of a high reflectivity mold or metal. 26. The LED assembly of claim 21, wherein the upper junction 93323 36 1294696 is spaced apart from the lower structure by a predetermined distance. 27. The LED assembly structure of claim 21, comprising: 曰 supporting a lower mirror of the led wafer, the lower mirror extending upwardly from the LD's wafer and surrounding to reflect light from the LED wafer upward; A transparent sealing member is formed inside the lower mirror and around the LED wafer. The LED assembly of claim 21, wherein the lower structure comprises: a base supporting the LED wafer; and a transparent sealing member disposed on the base to seal the LED wafer. 29. The LED group vibration member of claim 21, wherein the substrate is a reflection plate of a backlight unit in which the LED assembly is mounted. 93323 3793323 37
TW094146463A 2005-02-03 2005-12-26 Side-emission type led package related application TWI294696B (en)

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