TWI286828B - Film-shaped adhesive and semiconductor package using the same - Google Patents

Film-shaped adhesive and semiconductor package using the same Download PDF

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Publication number
TWI286828B
TWI286828B TW094139388A TW94139388A TWI286828B TW I286828 B TWI286828 B TW I286828B TW 094139388 A TW094139388 A TW 094139388A TW 94139388 A TW94139388 A TW 94139388A TW I286828 B TWI286828 B TW I286828B
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TW
Taiwan
Prior art keywords
film
temperature
diamine
adhesive
layer
Prior art date
Application number
TW094139388A
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English (en)
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TW200625566A (en
Inventor
Youichi Kodama
Seiji Itami
Kuniaki Sato
Shuji Tahara
Original Assignee
Mitsui Chemicals Inc
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Publication of TW200625566A publication Critical patent/TW200625566A/zh
Application granted granted Critical
Publication of TWI286828B publication Critical patent/TWI286828B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/124—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present on both sides of the carrier, e.g. double-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Description

!286828 18486pif 九、發明說明： 【發明所屬之技術領域】 本發明關於薄膜狀黏結劑，更詳細地關於能夠在半導 體封裝體内適宜地使用的具有晶片接合薄膜功能的薄膜狀 黏結劑，同時具有晶片接合薄膜的功能和在該封裝體安裝 製程中作為切割勝帶的功能的薄膜狀黏結劑。
【先前技術】 使用薄膜狀黏結劑的半導體封裝體的製程，通常要經 過如下製程：（1)在大口徑的晶圓背面黏貼薄膜狀黏結劑的 ，程；（2)在薄膜狀黏結劑侧黏貼切割膠帶的製程；（3)切 副’將晶片單片化的製程；（4)將單片化的晶片從切割膠帶 揭取的製程；（5)藉由薄膜狀黏結劑晶片接合到作為被黏接 體=基板上的製程；⑹引線接合晶片/基板間的製程；⑺ 用密封劑成型的製程。 ，膜狀黏結劑起到晶片接合薄膜的功能，在上述⑴ 是對晶圓進行黏接，而在上述⑺製程中是對基板進
St =著眼於對晶圓的黏接，近年來晶圓的厚度越 膜狀料雜時會發生日日日圓㈣的問題，13此對薄 吉劑要求具有更優異的低溫黏接性。另-方面，如 者眼於對基板的黏接，近年來 級數在增加，盎θ片早個封裝體内的晶片層積 長時間：ηΤ 接合時的溫度、時間更加高溫化、 化，存在對的薄膜狀黏結劑就會在引線接合中固 確保可靠性土 ^凹凸的埋人不良的問題。從而，為了 ’對㈣職储求即使在更制的引線 1286828 18486pif =合條件下’也要具有對基板表面凹凸的更加優異的埋入 曰==近年來，出於簡化製程的目的，要求同時具有 ΐ 力能和切割膠帶的功能的切割·晶片接合 郝專=,日痛㈣難6G2號公報和特⑽㈣腦藏公 )由此可以同時進行上述製程的（丨)和(2)。 判.曰尚未開發出低溫黏接性和埋入性優異的切 口j日日片接合薄膜。 【發明内容】 ⑽if·是鑒於如上所述狀況㈣行的，目的在於提 埋人性優異的能夠在半導體封裝體内適宜 同B 士且^有晶片接合薄膜的功能的薄膜狀黏結劑，以及 1=、上1接合薄_功能和在該封裝體安裝製程中作 為切割膠T的功能的薄膜狀黏結劑。 本發，人等通過刻苦研究，完成了本發明。 即’第-發明是薄膜狀黏結劑，其特徵在於，包括含 、於等於1〇〇t的熱塑性聚醯亞胺為主成 二θ 5及在5Gt：_藏剪切彈性模數小於等 於1x10 Pa的黏著劑層①）。 所述薄膜狀黏結劑較佳為進—步包括基材⑷和黏著 二賦予作為切割膠帶的功能。從揭取時的膨脹 ==，較佳為所述基材(A)是在坑的拉伸彈性 核數小於雜50_>a _膜。從揭取性的角度考慮，較 佳為所述黏著劑層(B)與所述黏結劑層(〇的⑽。剝離強度
• 的角度考慮，較佳為所述黏結 二=二 熱_聚醯亞胺和熱固性樹脂為必要成 二= 曰：成物構成’所述熱塑性聚醯亞胺藉由使含有在 鍵細的二胺的二胺成分與四賴二軒成分 1286828 18486pif 是 0.1 〜2.5N/25mm。 從耐熱性的肖度考慮，較佳為所述㈣綱(c)由除了 聚醯亞胺以外還含有熱固性_旨和制的樹脂組成物構 成。、 ' 從低溫黏接性的角度考慮，較佳為所述聚醯亞胺為使 含有在分子内具有鏈狀聚醚的二胺的二胺成分與四 酐成分反應而得到的聚醯亞胺。 - 從低溫黏接性的角度考慮，較佳為所述聚酿亞胺為使 含有在分子内具有至少-個_基的二胺和在分子内 鏈狀聚醚的二賴二胺成分與四羧酸二肝成分反應而得到 的、玻璃轉移溫度為4CTC〜1〇〇它的聚醯亞胺。 第二發明是薄膜狀黏結劑’其特徵在於，至少具有一芦 含=玻璃轉移溫度彳、於等於⑽。c的聚醯亞胺，並且在二 C溫度保持1小時時的儲藏剪娜性 為小於等於5.0Χ1.的黏結劑層（c，）。 〇皿度下 所述熱塑性聚醢亞胺藉 == -有至/-個賴麵二胺和在分子内具麵狀聚_ 128682,8 I8486pif 二胺的二胺成分與四羧酸二酐成分反應而得到，且破璃轉 移溫度為40°C〜100°C。 第三發明是使用所述薄膜狀黏結劑製造的半導體封裝 體。 衣 本發明的薄膜狀黏結劑，具有能夠在半導體封裝體内 適宜地使用的晶片接合薄膜的功能，低溫黏接性優異，並 且對基板表面凹凸的埋入性優異。進而，通過同時且有在
該封裝體安裝製程中作為切割膠帶的功能，可以使製程簡 化0 【實施方式】 本發明的薄膜狀黏結劑由在半導體封裝體内起到晶片 接合薄膜功能的黏結劑層（c)和黏著劑層（D)或黏結^層 (C’)構成。較佳為依次層積起到切割膠帶功能的支撐基^ (ί)和黏㈣層⑼、以及在半導體封裝體内起到晶片牙^ 黏結劑層(c,)的構成。更佳為依次層積起至^ 口 :▼功月b的支標基材(A)年口黏著劑層⑼、以及在半導體 層i 到晶片接合薄膜功能的黏結劑層(c)和黏著劑 質沒功能的支撐基材(A)和黏著劑層⑻的材 可以是旧式、非旧式(難式) 在抑的拉仲^日守的膨服性的角度考慮，支撐基材㈧ 小於等於_MPa 佳為小於等於5_Pa，更佳為 1286828 18486pif ，為支撐基材(A)，具體地可以列舉聚乙稀 I烯烴、聚氯乙烯等。 T丙~等 烯酸舉㈣㈣黏著劑、内 作為市售品，υν式可以舉出例如電氣化工资 有限公司製騰系列或古河電氣工業股份有限業赞股份 系列等。非UV式可以舉出例如三井化與題此 MPF系列等。 予月又知有限公司製 心ifΑ)和黏著騎⑻的厚度沒有特職制，作從i。 ，角度考慮，較佳為基材⑷為5G〜 ; 劑層(B)為5〜20μηι左右。 右勒著
心lit體封频内起到晶片接合薄膜功能的黏結_ 2丰=層^和黏著劑層⑼的材質沒有特別限制J 發生膨脹或剝離等不良情況即可。 中不 、黏結劑層（C)和黏結劑層(c，)含有主成分熱塑性聚醯 亞胺’該聚醯亞胺的玻璃轉移溫度較佳為小於等於_ 〇°C，從低溫黏接性的角度考慮，進-步較佳為為4(TC〜80 C 〇 、從耐熱性的角度考慮，黏結劑層(C)和黏結劑層(C，)較 佳為進一步含有熱固性樹脂和填料。 一從低溫黏接性的角度考慮，熱塑性聚醯亞胺較佳為使 含有在分子内具有鏈狀聚_的二胺的二胺成分與讀酸二 酐成分反應而得到的聚醯亞胺。 10 ㊈ 1286828 18486pif 作為在分子内具有鏈狀聚轉的二胺的 出例如聚四亞f基氧二鄰氨基苯甲酸酿Γ聚亞丁甲可^舉 苯甲，、聚㈣^ 的量二胺成分中所占 =轉移溫度會增高’從二::果另 莫耳/。，财璃轉移溫度會過低，從而較為不佳。 另外，從黏接性的角度考慮，較佳為二胺成分中進一 Y 3有在分子内具有至少一個酚羥基的二胺。 土有雜基的二胺沒有特別限制，但較佳為用通式⑴ 〜(3)表示的二胺。 H2N^
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OH η2ν〆 ""2 (Z各自獨立地麵直接連接或者 Z的二價有機基可以舉出碳原子數“、基。） 基、脂環族基、單環式芳香族基、縮 27的脂肪族 還^芳香族基直接或者由交聯成員相互連^芳香族基、 合環式芳香族基等。 而开^成的非縮 作為用通式（1)〜(3)表示的二胺的具 出2,3-二氨基苯紛、2,4-二氨基苯紛、25_二气列如可以舉 二氨基苯紛、3,4-二氨基苯紛、3,5_二氨=基苯齡、认 基苯m二氨基跡4,6_二氨基苯“ f =二氨 二錄聯苯、4,4，_二氨基_3,3，_二經基聯笨二風=--2,2:絲聯苯、4,4，_二氨基_2,2，，5,5,,綠= 基二苯基甲烧、4,4，-二氨基_3,3，-二經基 -=甲炫、4,4，-二氨基_2,2，_二經基二苯基甲燒、44： ^基-2,2，，5,5，__基二苯基甲院、2,2_雙[3_氨基邻 本基]丙烷、2，孓雙[4-氨基-3-羥基苯基]丙烷等。 工土 具有酚羥基的二胺較佳為在全體二胺成分中為〇ι〜 10莫耳％，進一步較佳為1〜5莫耳％。如果不足〇 ι莫耳 %，則無法得到充分的耐熱性；如果超過10莫耳％\則存 在低溫黏接性會下降的傾向。 能夠在本發明中使用的在分子内具有鏈狀聚醚的二胺 和在分子内具有至少一個酚羥基的二胺以外的其他二胺， 12 (§) 1286828 I8486pif . ·
只要是製成聚醯亞胺時玻璃轉移溫度小於等於1〇〇。〇，就 可以沒有特別限制地使用。例如可以舉出間苯二胺、鄰苯 二胺、對笨二胺、雙(3·氨基苯基)硫化物、雙(‘氨基苯基) ^化物、雙氨基苯基)亞砜、雙(4-氨基苯基)亞砜、雙(3-t基苯基)碾、雙(4_氨基苯基)碾、2,2-雙[4_(3-氨基苯氧基） 本基]丁心、1，1，3,3_四甲基_1，3_雙(3_氨基丙基〕二石夕氧炫、 二1二3,3_四苯基心，3·雙…氨基丙基〕二矽氧烧、以雙…氨基 基)苯、聚四亞甲基氧-二鄰氨基苯甲酸酯、聚四亞甲 :氧-二間氨基苯甲酸醋、聚四亞甲基氧-二對氨基苯甲酸 -曰♦一亞甲基氧-二鄰氨基苯甲酸酯、聚三亞甲基氧_ 一 間氨基苯甲酸_、聚三亞甲終二對氨絲甲酸甲酯^。一 、另外，同樣地，對於能夠在本發明中使用的四羧酸二 酐成刀，/、要疋製成聚醯亞胺時玻璃轉移溫度小於等於 100:C一’就可以沒有特別限制地使用。例如可以舉出均苯四 甲-夂酐3,3，4,4 _本甲酉同（benz〇phenone)四叛酸二酐、 3,3’，4,4，_聯笨四羧酸二軒、氧代_4,4，_二鄰苯二甲酸二軒、 乙=醇雙偏苯三酸二軒、2,2_雙㈣，4_二誠苯氧基)苯基） 丙燒-酐、α，ω_聚二甲基梦氧炫讀酸二酐、α，〜雙⑽ 一叛基本基)聚—甲基石夕氧烧二酐等。 、π㈣製造方法包括公知方法，可以使用能夠製 造聚龜亞賴所有方法。其巾，較佳為在有機溶劑中進行 反應作為在.亥反應中使用的溶劑，例如可以舉出Ν，ν_ -曱基乙胺、Ν_甲基_2“叫細、曱苯、 甲苯、苯酚、甲酚等。 Τ本9一 13 1286828 18486pif 另外，在該反應中的反應原料在溶劑中的濃度通常為 2〜50重量％，較佳為5〜40重量％，G9羧酸二酐成分與二 胺成分的反應莫耳比以四羧酸成分/二胺成分計較佳為0.8 〜1.2的範圍。如果在該範圍，耐熱性就不會下降，因此 是較佳的。
作為聚龜亞胺前驅體的聚醯胺酸合成中的反應溫度， 通常小於等於60°C，較佳為1〇。〇〜5〇°C。反應壓力沒有特 別限制，在常壓就可以充分地實施。另外，反應時間因反 應原料的種類、溶劑的種類以及反應溫度而異，但通常〇.5 〜24小時就足夠。對於本發明的聚醯亞胺，藉由把這樣得 到的聚醯胺酸加熱至1〇〇〜4〇〇°c進行醯亞胺化，或者使用 醋酸酐等隨亞胺化劑進行化學醯亞胺化，來得到具有與聚 醯胺酸對應的重複單元結構的聚醯亞胺。 另外，藉由在130。〇〜250°C進行反應，同時進行聚醯 胺酸的生成與熱醯亞胺化反應，可以得到本發明的聚醯亞 胺。即，藉由把二胺成分和四羧酸二酐在有機溶劑中懸浮 或者溶解，在130〜25Gt：的加熱條件下進行反應，同；^進 仃聚醯胺酸的生成與脫水醯亞胺化，可以得到本發明的聚 醯亞胺。 本發明的聚醯亞胺的分子量沒有特別限制，可以根據 ^途^加4法設定為任意分子量。對於本發明的聚酿亞 女’猎由麟所使用二胺成分、四羧酸二酐的用量比，例 1巴聚醯亞胺以G.5g/dl的濃度溶解到轉炫酮 中後’能夠使在35°c測定的對數黏度值為〇1〜3 〇dl/g的 14 1286828 18486pif· 任意值。 本發明中，所謂聚醯亞胺除了 100%醯亞胺化而形成 的聚酸亞胺以外，還包括共存有一部分作為其前驅體的聚 醯胺酸的樹脂。 另外，在上述反應中得到的聚醯亞胺溶液可以直接使 用，但也可以把該聚醯亞胺溶液投入到貧溶劑(poor solvent) 中將聚醯亞胺再沉澱析出。 熱固性樹脂和填料的材質沒有特別限制，但從對基板 ίΐΖΐΐ里^性的角度考慮，較佳為把黏結劑層(C)或黏 :二 8GC溫度保持1小時時的儲藏剪切彈性模 ==r〇6pa的材料，更佳為小於等於3她 齡樹脂的具體例’例如可以舉出雙紛A、雙 酪s、又酌F的縮水甘油鱗、苯 聯苯型環氧化合物等。 〜士孓％軋树知、 相對於100重量份熱塑性聚醯亞胺，埶· 合量為〗〜重量份，較佳為1〜：重量 範圍，就可以維持耐熱性，薄膜形成性*輪 另外也可以根據需要混合固化劑。固 例如味唾系固化劑、苯酶系固化劑牛出 固化劑等。從樹脂組成物的保存穩定性的 為具有潛熱和長的可使用時間的固化叫。a心乂土 相對於100重量份熱固性樹脂，二化劑的混合量較佳 1286828 18486pif， 為在〇〜20重量份的範圍内。如果在該 — 在樹月旨態下生成凝膠，掛脂溶液的保存穩性不優谷異易 "=，也可以根據需要混合填料。填料可以舉出例如 曰:::刪傻、脲樹脂、酚醛樹脂等有機填料; 乳化鋁、虱化鋁、矽石等無機填料。 〇〜/Π1⑻重量錄錄雜邮，杨混合量為 π 1 〇^3000 *° ^ 液液狀態下填料不容易沉降，樹脂溶 性就會下降。 囬如果填枓過多，則黏接 發明=也可以轉冑要添蝴合劑。卩妓不損害本 χ 0，對於耦合劑沒有特別限制，伸較佳纟 液溶劑中的溶解性良好的輪人挪1 仏為在樹w 合劑、鈦系 50會於!00重置份聚酿亞胺，耦合劑的混合量為0〜 圍内里目二較佳為在0〜3〇重量份的範圍内。如果在該範 圍内，則耐熱性就不會下降。 ㈣的樹㈣結劑層(c) ()的尽度較佳為為5〜ΙΟΟμηι。如果不足 =高則不能充分埋入，但即使超過，埋入也得不 直η 黏著劑層⑼與黏結劑層(C)或黏結劑層(C，)相接， =咖剝離強度較佳為〇1〜2.蕭5讓。如果不足 _ ’則在切割時容易產生晶片飛出的問題；如果
16 (I 1286828 18486pif. 超過2.5N/25mm，則在蔣士 出現裂縫。.揭取時有時無法揭取，或者晶片會 黏著劑層(D)較佳為在 等於L0xH)6Pa，職為^⑽㈣㈣彈性模數小於 1A6 於專於 l〇xl〇5Pa。如果#1 〇 X Pa，則存在低溫黏接_的傾向。 …. 藉由黏著劑層(D)把薄膜 夠以更低的溫度進行她，办扣， 曰曰片上’能 片上時，可以減少晶片翹曲黏貼到小於等於則帅的薄晶 酸系黏著if。）的具體例可以舉出有機㈣黏著劑、丙婦 從對⑪日日片的②合性和耐 (D)的厚度較佳為j〜 月黏耆劑層 附力；如果超過10μ則亡 則無法獲得黏 如可=膜f黏結劑的方法沒她 液塗布到ί㈣聚醯亞賴脂的溶 層⑼，將其t事步 ==著f容液，並乾燥，形成黏著劑 層部分(黏、结劑層C+黏著劑層D或黏結劑 =刀義T部分(基材A+黏著劑層 事先進行圓周切割。 I像而要 製造本發明的半導體封裝體的方法沒有特別限制，通 ③ 17 1286828 18486pif =以按照如下方法製造：⑴在大口徑的晶圓背面黏著劑 黏貼薄膜狀減劑；（2)切割，.將晶片單片化；（3)在 ，者劑層⑼和黏結劑層(c)之間揭取單片化的晶片；（4)姐 由黏結劑層(C)晶片接合到被作為被黏接體的基板上; 引線接合晶片/基板間；（6)用密封劑成型。 實施例 下面、，根據實關進-步詳細說明本發明，但本發明 、、，不限於這些實闕。這裏，實施射的各物性值用以 方法測定。 (儲藏剪切彈性模數的測定方法）
测定裝置：RHEOMETRICS公司製，ARES 測定模式··溫度分散(控制變形），扭曲模式 測定溫度範圍：30〜2〇〇°C(5°C/分鐘），氮氣氛圍下 頻率：1Hz (儲藏剪切彈性模數時間分解的測定方法）
测定裝置：RHEOMETRICS公司製，ARES 測定模式：時間分散(控制變形），扭曲模式 測定溫度範圍：18〇〇c，5小時，氮氣氛圍下 頻率·· 1Hz (拉伸彈性模數的測定方法） 4疋裝置·東洋精機公司製，StrographM-1 測定模式：拉伸模式 (剝離強度的測定方法） ^疋裝置·東洋精機公司製，StrographM-1 18 ⑧ 1286828 18486pif 測定模式·· 180。剝離 合成例1 ^在備有攪拌機、氮氣導入管、溫度計、盛滿有均三甲 苯的迪安’達克(Dean-Stark)管的300ml可分離五口燒瓶 中’秤取聚四亞甲基氧·二對氨基苯甲酸酯（IHARA ChemiCal工業股份有限公司製，商品名：ELASMER 1000， 平均分子量1268)18.75g、氧代-4,4，_二鄰苯二甲酸二酐 ^5’87g、N-甲基_2_吡咯烷酮i〇〇g、均三甲苯45g，在氮氣 氛，下溶解，向其中一點一點地添加二氨基丙基四曱基二 矽氧烷（信越化學工業股份有限公司製，商品名·· A^I E)32.00g。然後，把氮氣導入管***溶液内（成冒泡 狀您），將體系内溫度加熱至170°C〜180。〇，在共沸去除 水的條件下保持12小時。冷卻後，加 =再添加二氧基-3,3，.二羥基聯苯(和— 歌^精化^ =有限公司製，商品名：HAB)Q.93g，得到熱塑性聚酿 =的溶液。得到的聚醯亞胺的玻璃轉移溫度為5拉 伸彈性模數測定中的Tan5的峰值溫度）。 對得到的聚酿亞胺固體組分1〇〇重量份混合環氧化合 ^井化學股份有限公㈣，vg3iq⑽重量份、石夕石系 有限公司龍森製，1_FX)4G重量份，職拌機充 刀地混合，得到樹脂組成物1。 合成例2 笑的拌機、氮氣導人管、溫度計、盛滿有均三甲 、、女-斯達克管的300ml可分離五口燒瓶中，秤取n 19 1286828 18486pif _ f 麵 • 雙(3-(3-氣基本氧基)本氧基)苯15.0〇g、；g夕酮二胺(α，ω^(3_ 氨基丙基)聚二曱基矽氧烷(東麗道康寧有機矽股份有限公 司製，BY16J53U，平均分子量92〇)43.44g、甲基·2-吡 咯烷S同·ll〇,61g、均三曱苯47.4〇g，在氮氣氛圍下加熱至 e 50°C將其溶解，向其中一點一點地添加氧代-4,4，-二鄰苯二 曱酸二酐18.49g、乙二醇雙偏苯三酸二酐815g。然後，把 … 氮氣導入官***溶液内（成冒泡狀態），將體系内溫度加熱至 • n〇°C〜18〇C，在注意到暴沸的情況下保持30小時，共沸 去除水，從而得到熱塑性聚醯亞胺溶液。得到的聚醯亞胺 的玻璃轉移溫度$ 67。〇(拉伸彈性模數測定中白勺Tan(^的 峰值溫度）。 一對彳于到的聚醯亞胺固體組分1〇〇重量份混合環氧化合 物(二井化學股份有限公司製，VG31吼讲重量份、味唾 ^固化劑(四國化成工業股份有限公司，2MA〇K_pw)i重 、 、石夕石系填料(股份有限公司龍森製，1_FX)39重量份， 用授拌機充分地混合，得到樹脂組成物2。 : 合成例3 _ 錢有解機、氮氣導人f、溫度計、盛滿有均三甲 = 斯達克官的3GGml可分離五口燒瓶中，秤取聚四 土氧-二對氨基苯甲酸酯(IHARA Chemical工業股份 限a司製，商品名·· ELASMER 1〇〇〇，平均分子量 1 一2=3:95g、雙(3_氨基苯氧基)苯28·⑻g、氧代-4, ^本—甲酸二酐3412g、N_甲基·2_鱗細⑽g、均三 本4〇g’在氮氣氛圍下溶解，把氮氣導入管***溶液内（成 20 ⑧
1286828 18486pif 冒泡狀態）’把體系内溫度加熱至17〇。^〜18〇。〇，在共彿 去除水的條件下保持12小時。冷卻後，加入N_甲基_2_吡 略烷酮290g進行稀釋，，再添加4,4，，二氨基-3,3，_二羥基勝 苯(和歌山精化工業股份有限公司製，商品名·· HAB)〇.7g， 得到熱塑性聚醯亞胺的溶液。得到的聚醯亞胺的破璃轉移 溫度為157°C(拉伸彈性模數測定中的Tans的峰值溫度）。 對得到的聚醯亞胺固體組分1〇〇重量份混合環氧化合 物(二井化學股份有限公司製，VG31〇1)5重量份，用授拌 機充分地混合，得到樹脂組成物3。 實施例1 把樹脂組成物1塗布到表面處理PET薄膜(帝人杜邦 薄膜股份有限公司製，A54，厚度5〇μιη)上，在露c加熱 30分鐘，得到厚度2〇μπι的黏結劑層（c)。另外，在18〇它 溫度保持1小時時的儲藏剪切彈性模數為〇 96xl〇6Pa。
在該黏結劑層(C)的上面，進一步塗布在1〇〇重量份矽 酮^旨(東麗道康寧股份有限公司製，SD456咐添加〇.9 重量份麵催化劑溶液(東麗道康寧股份有限公司製，NC 液:在贿加熱5分鐘，形成厚度5_ 黏著劑層⑼在5叱的儲藏剪切彈性模 轉射晶圓的大小對得到的由黏結劑層(C) 劑晶片接合_部分進行沖孔，在黏結 d層(C)側經由黏著劑層⑼在6(rc 黏著劑_構成糊頻三絲學股==(7 ⑧ 21
1286828 18486pif fnn^ MPF 5 1〇〇Mm 5 〇OMPa)，得到本發明的薄膜狀黏結劑。這襄， 到玻;晶:黏著劑層⑼，在室溫黏貼 mm正方形大小進行切割， 杆二取^/x水、晶片飛出、毛邊等問題。並且，隨後進 j取(在縣騎(B)轉結歸(C)⑼獅），但沒有發 生揭取失敗等問題。 通過得到的5麵正方形玻璃晶片上的黏結劑層(c)， 在2〇mm正方形的石夕上進行置c、1〇膽、ι〇秒鐘的假相 晶片固定的加熱壓接後，在⑽。c無負載的條件下加熱固化 3小％。把該試驗片在260¾的烘箱中放置3〇分鐘，但沒 有發現膨脹和剝離等_，可以知道财熱性(埋入性)優異。 實施例2 除了使用丙烯酸樹脂（三井杜邦P0Lychemical 製’ VAMAC)100重量份、環氧化合物(三井化學股份有限 公司製，VG3101)20重量份、固化催化劑（四國化成製， 2maok_PW)l重量份構成的混合物来代替實施例丨中的黏 着劑層（D)的矽酮樹脂/銘催化劑溶液以外，採用盥 \ 同樣的方法製作試驗>;，進行評價。 將評價結果示於表1。 實施例3 除了用樹脂組成物2代替貫施例1中的樹脂組成物1 以外，採用與實施例1同樣的方法製作試驗片，並進行評 22 ⑧ '1286828 18486pif * 價。 將評價結果不於表1〇 實施例4 除了甩樹脂組成物1代替實施例1中的黏著劑層(D) 的矽酮樹脂/鉑催化劑溶液以外，採用與實施例1同樣的方 法製作試驗片，並進行評價。將評價結果示於表1。 / 比較例1 ^ 除了用樹脂組成物3代替實施例1中的樹脂組成物1 以外，採用與實施例1同樣的方法製作試驗片，並進行評 價。 將評價結果示於表1。 23 ③ I2868l_f 表1
實施例1 實施例2 實施例3 實施例4 比較例1 基材(A) 聚稀烴系 (85μιη) <— <— <~~ <— 黏著劑層(B) 聚烯烴系 ,(15μηι) <— <— <— ^-- 黏結劑層(C) 樹脂組成物 1(20μπι) 樹脂組咸物 2(20μιη) 樹脂組成物 1 (20μιη) 樹脂組成物 3(20μηι) 黏著劑層 (D) 矽酮系 (5μιη) 丙烯酸系 (5μπι) 矽酮系 (5μιη) 樹脂組成物 1(5μιη) 矽酮系 (5μιη) 基材(A)的 拉伸彈性模 數 400MPa <— <— <— <— 黏著劑層(B) 與黏結劑層 (C)的 180。 剝離強度 lN/25mm <— <— <— <— 熱塑性聚醯亞 胺的玻璃轉移 溫度 56〇C <— 67〇C 56〇C 157〇C 黏結劑層(C) 在180°C溫 度保持1小 時時的儲藏 剪切彈性模 數 0.96xl06Pa 5.3xl06Pa . 0.96xl06Pa 2.0xl06Pa 黏著劑層 (D)在 50〇C 的儲藏剪切 彈性模數 5.7xl04Pa 1.3xl05Pa 5.7x104Pa 1.6xl06Pa 5.7xl04Pa 黏著劑層 (D)的晶片 層壓性 可室溫層壓 可室溫層 壓 可室溫層壓 室温層壓 稍微困難 可室溫層壓 黏結劑層(C) 的晶片接合 性 良好 良好 良好 良好 l〇〇°C鍵合 困難 切割性 良好 良好 良好 良好 良好 揭開性 良好 良好 良好 良好 良好 耐熱性 良好 良好 稍微不良 良好 良好 24 .1286828 18486pif 產業上的利用可能性 本發明的薄膜狀黏結劑，可以作為能夠在半導體封裝 體内適宜地使用的晶片接合薄版以及晶片接合薄膜和該封 裝體安裝製程中的切割膠帶，低溫黏接性、對基板四凸的 埋入性優異，因此產業上的利用價值高。 【圖式簡單說明】 無 【主要元件符號說明】 無

Claims (1)

  1. Ι28Γ6828 ‘ 爲第®^39388號中文專利範圍無劃線修正頁 修正日期：96年5月21日 修(更)正發換頁 十、申請專利範圍： 1 · 種薄膜狀黏結劑，盆Μ外(3T〜一一----—一—一—--- 移溫度小於等於靴的熱塑於包括：含有玻璃轉 =劑·^⑶職細咖_等於_ 2·如申請專利範圍第1頊所 徵在於，進—步包括基材⑷和黏結劑，其特 徵在t 2項所述的薄贿黏結劑，其特 MPa的_。 的拉伸·模數小於等於 代在4於如圍第2項所述的薄.黏結劑，其特 強度為 0.1 〜2.5N/25mm。 5. 如申請專利範圍第3項所述 徵在於，所述黏著劑層_所述::、s“、、、』、、4寸 強度為G.W2侧麵。姐結劑層（C)的18〇°剝離 6. 如申請專利範圍第！項至 薄膜狀黏結劑’其特徵在於，所述黏結劑層二 ，《亞胺以外還含有熱固性樹脂和填料作為)必=二 树月曰組成物而構成。 、 7. 如申請專利範圍第6項所述的薄膜 徵在於，所述_亞胺為使含有在分子内具有鏈上= :胺的二胺成分與四誠二軒成分反應而得到的；酸亞 26 128.6828 ·
    6項所述的薄膜狀黏結劑，其特 18486pifl * , · 8·如申請專利範圍第 徵在於，所述聚醯亞胺為使含有在分子内具有至少一個酉分 羥基的二胺和在分子内具有鏈狀聚醚的二胺的二胺成分與 四羧酸二酐成分反應而得到的、玻璃轉移溫度為4〇〇c〜 100°c的聚醯亞胺。 9·一種薄臈狀黏結劑，其特徵在於，至少具有一層含 有玻璃轉移溫度小於等於10(rc的熱塑性聚醯亞胺，並且 在18(TC溫度保持1小時時的儲藏剪切彈性模數在丨⑼。c溫 度下為小於等於5.〇xl〇6pa的黏結劑層（c，）。 10·如申明專利範圍第9項所述的薄膜狀黏、結劑，呈特 徵在於，所述黏結劑層（C，)由以熱塑性聚酿亞胺和熱固性 樹分的樹脂組成物構成，所述熱塑性聚醯亞胺 狀㈣的二胺的二胺成分與四 11. 如申請專利範圍第9工百斛、+ 冬 徵在於，所述黏結劑的缚膜狀黏結劑，其特 樹脂為必要成分的樹二=塑性聚醯亞胺和熱固性 夢由传令;絲構成’所述熱塑性聚酿亞胺 错由使3有在分子内具有至少—個㈣ 内具有鏈狀聚醚的二胺的_ . 刀 而得到，甘曰谈^ 私成分與四叛酸二酐成分反應 而付到亚且玻璃轉移溫度為4代〜1〇吖。 12. -種使用申請專利範 項所述的薄膜狀黏結劑製造的半導體項的任思
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JP2010241967A (ja) * 2009-04-07 2010-10-28 Nitto Denko Corp 再剥離性粘着シート及びこれを用いた被着体の加工方法
US20140191431A1 (en) * 2011-08-31 2014-07-10 Soken Chemical & Engineering Co., Ltd. Pressure-Sensitive Adhesive Sheet for Immobilization of Imprint Mold, Imprint Apparatus, and Imprint Method
JP5367903B2 (ja) * 2012-03-19 2013-12-11 古河電気工業株式会社 半導体ウェハ表面保護用粘着テープ
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CN105448852A (zh) * 2014-08-27 2016-03-30 群创光电股份有限公司 曲面电子装置
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MX2019012405A (es) 2017-04-21 2020-01-27 Henkel IP & Holding GmbH Copolimero de bloque de poli (met) acrilato-bloque de poliimida-poli (met) acrilato funcionalizado con (met) acrilato, metodo de preparacion y uso del mismo.
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Family Cites Families (16)

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TW294702B (zh) * 1994-03-08 1997-01-01 Sumitomo Bakelite Co
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TW311927B (zh) 1995-07-11 1997-08-01 Minnesota Mining & Mfg
EP1266926B1 (en) 2000-02-01 2007-05-23 Nippon Steel Chemical Co., Ltd. Adhesive polyimide resin and adhesive laminate
JP2001234020A (ja) * 2000-02-21 2001-08-28 Hitachi Ltd 樹脂組成物、該樹脂組成物を用いた接着フィルム、金属箔付き接着フィルム、配線基板及び実装構造体
JP4120156B2 (ja) 2000-11-20 2008-07-16 日立化成工業株式会社 ダイボンディング材及び半導体装置
JP3719234B2 (ja) * 2001-08-06 2005-11-24 日立化成工業株式会社 半導体用接着フィルム、およびこれを用いた半導体用接着フィルム付きリードフレームならびに半導体装置
US6808819B2 (en) * 2002-02-14 2004-10-26 Shin Etsu Chemical Co., Ltd. Heat resistant resin composition and adhesive film
JP2003261834A (ja) 2002-03-12 2003-09-19 Sumitomo Bakelite Co Ltd 半導体用接着フィルム、半導体装置、及び半導体装置の製造方法
JP4067869B2 (ja) * 2002-05-13 2008-03-26 新日鐵化学株式会社 シロキサン変性ポリイミド樹脂
EP1508584B1 (en) 2002-05-30 2009-05-20 Mitsui Chemicals, Inc. Adhesive resin and film adhesives made by using the same
JP2004059859A (ja) 2002-07-31 2004-02-26 Mitsui Chemicals Inc フィルム状接着剤及びその接着工法並びに該フィルム状接着剤を用いた半導体装置
JP2004266138A (ja) 2003-03-03 2004-09-24 Hitachi Chem Co Ltd 半導体用接着フィルム、これを用いた樹脂基板及び半導体装置、並びに半導体装置の製造方法
JP4171898B2 (ja) * 2003-04-25 2008-10-29 信越化学工業株式会社 ダイシング・ダイボンド用接着テープ
WO2004101701A1 (ja) * 2003-05-14 2004-11-25 Mitsui Chemicals, Inc. 接着性樹脂組成物及びフィルム状接着剤並びにそれを用いた半導体装置
TWI304835B (en) 2003-06-10 2009-01-01 Hitachi Chemical Co Ltd Film adhesive and manufacturing method thereof,adhesive sheet and semiconductor device

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