TWI272245B - A method for making carbon nanotube device - Google Patents

Abstract

The present invention relates to a method for fabricating a carbon nanotube device. The method includes the following steps: providing a nanotube yarn, immerging the nanotube yarn into a volatile organic solvent, molding the nanotube yarn into a predetermined shape by an assistant device, heating processing the nanotube yarn with the predetermined shape at a predetermined temperature and then the nanotube yarn maintains the predetermined shape.

Description

.1272245 形狀之奈米碳管器件雛形； 將奈米碳管器件雛形進行熱處理至一預定溫度，使奈米碳管線保持住該預定 形狀，進而得到一奈米碳管器件。 相較於先前技術，所述奈米碳管器件製作方法，其藉由採用一輔助裝置輔助 奈米碳管線形成一具有預定形狀之奈米碳管器件雛形，並對該奈米碳管器件雛形 進行熱處理至一預定溫度，以使奈米碳管線保持住該預定形狀，進而可實現具有 預定形狀之奈米碳管器件之製作。 、’、 【實施方式】 下面將結合附圖對本發明實施例作進一步詳細說明。 本發明實施例所提供之奈米碳管器件製作方法，'主要包括以下五個步驟： (1)提供一奈米碳管線。 (Ni)或其合金之一；（c)將沈積有催化劑層之基底於保護氣體中 e)、鈷(Co)、鎳 以300〜400攝氏 首先採用化學氣相沈積法生長一超順排奈米碳管陣列。本實施例提供之方 法，可參見中國大陸專利申請公開第02134760.3號。該超順排奈米碳管陣列之 生長方法主要包括麵:(a)提供—平滑基底，該基底可選用p型或n型^基底； (b)於該基底上沈積一催化劑層，該催化劑層之材質可選用鐵(化）、鈷(⑺）、一錄 度溫度進行退级理，時間約為10h ;⑷將退域理後之沈積有催化劑層之基 底加熱至_〜?GG攝岐，私碳聽娜魏體之齡驗，細該碳源氣之 流速，使催化劑與環境之溫度差保持於5(rc以上，控制該混合氣體之流速比， ”之分壓倾20%，城5〜30分鐘，奈米碳管陣列將從基底長出。其中， 碳源氣輕統合物，可紅快、乙鮮，優翻冰，雜魏縣惰性氣體 或氮氣。虹述綠製備制之超順排奈米碳管陣列中之奈米碳管呈束狀_ 列，具有很高技面密度，且奈米碳管束之間存在很強之凡得瓦爾力，其^ 徑大小分佈比較集中而且直徑大小幾乎相同。.1272245 Shape of the carbon nanotube device prototype; heat-treating the carbon nanotube device to a predetermined temperature to maintain the nanocarbon line in the predetermined shape, thereby obtaining a carbon nanotube device. Compared with the prior art, the carbon nanotube device manufacturing method adopts an auxiliary device to assist a nano carbon line to form a prototype of a carbon nanotube device having a predetermined shape, and prototypes the carbon nanotube device. The heat treatment is performed to a predetermined temperature to maintain the nanocarbon line in the predetermined shape, thereby enabling the production of a carbon nanotube device having a predetermined shape. [Embodiment] Hereinafter, embodiments of the present invention will be further described in detail with reference to the accompanying drawings. The method for fabricating a carbon nanotube device provided by the embodiments of the present invention mainly includes the following five steps: (1) Providing a nano carbon line. (Ni) or one of its alloys; (c) the base on which the catalyst layer is deposited is in the shielding gas e), cobalt (Co), and nickel are firstly grown by chemical vapor deposition at a temperature of 300 to 400 ° C. Carbon tube array. The method provided in this embodiment can be referred to the Chinese Patent Application Publication No. 02134760.3. The method for growing the super-sequential carbon nanotube array mainly comprises: (a) providing a smooth substrate, the substrate may be selected from a p-type or an n-type substrate; (b) depositing a catalyst layer on the substrate, the catalyst The material of the layer can be iron (chemical), cobalt ((7)), and the temperature is degraded at a recording temperature for about 10 hours. (4) The substrate on which the catalyst layer is deposited after the retreat is heated to _~? The private carbon listens to the age of the body, and the flow rate of the carbon source gas is kept so that the temperature difference between the catalyst and the environment is maintained at 5 (rc or more, and the flow rate ratio of the mixed gas is controlled, "the partial pressure is 20%, the city 5~ In 30 minutes, the carbon nanotube array will grow from the substrate. Among them, the carbon source gas light combination can be red, fast, fresh, and ice, and Weiwei County inert gas or nitrogen. The carbon nanotubes in the array of carbon nanotubes are bundled _ column, which has a high technical density, and there is a strong van der Waals force between the carbon nanotube bundles, and the diameter distribution is relatively concentrated and the diameter The size is almost the same.

然後，採用-拉伸卫具從該超順排奈米碳管陣列抽取一奈米碳營綠n垃 7 :1272245 — 【主要元件符號說明】 20,20, -奈米破管線 10,10’ 白寶石棒Then, using a -stretching aid to extract a nano carbon camp green n 7:1272245 from the array of super-shoring carbon nanotubes - [Major component symbol description] 20, 20, - nano broken pipeline 10, 10' White gemstone

1010

Claims (1)

、1272245 十、申請專利範圍： 1· -種奈錢管ϋ件製作方法，包括步驟· •提供一奈米碳管線； · 米次入一揮無有機溶劑中以對其進行表面處理； ，以使其形成一具有預定开） 理一度，使奈米纖保持住該預定形 2.::作 =;===生 採用-拉伸工細超順排奈米唉管;=二：_咖 :成形之奈料管處― •-^制#5撕树梅賴_，射，高溫環境為 # =申請專利細第！項所述之奈米碳管器件製作方法，其 步驟：給已輔助成形之奈米碳管線通入一加埶電产。 •、^匕括 8'=;=__伽卿:谢爾熱處理之時 偷，其中，所 111,272245 X. Patent application scope: 1· - Method for making nai money tube parts, including steps · • Providing a nano carbon line; · Metering a single wave of organic solvent to surface treatment; Forming a predetermined degree of opening, so that the nanofiber retains the predetermined shape 2.::========================================================================= The tube of the nephew - •-^ system #5 tearing tree Mei Lai _, shooting, high temperature environment is # = apply for patent fine! The method for fabricating a carbon nanotube device according to the invention, the step of: feeding a carbon nanotube having an auxiliary forming into a twisted electric product. •, ^匕8'=;=__Gangqing: When Schell heats up, stealing, among them, 11